CN115036394A - Oxidation process of PERC battery - Google Patents
Oxidation process of PERC battery Download PDFInfo
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- CN115036394A CN115036394A CN202210778401.4A CN202210778401A CN115036394A CN 115036394 A CN115036394 A CN 115036394A CN 202210778401 A CN202210778401 A CN 202210778401A CN 115036394 A CN115036394 A CN 115036394A
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- 230000003647 oxidation Effects 0.000 title claims abstract description 87
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title claims abstract description 32
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 238000005086 pumping Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000011068 loading method Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005247 gettering Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Formation Of Insulating Films (AREA)
Abstract
The invention provides an oxidation process of a PERC battery, which comprises the following steps: firstly, opening a furnace tube to enter a boat; II, pressure pumping: third, first oxidation: cooling and boosting pressure, and introducing a certain amount of nitrogen and oxygen into an oxidation furnace tube to perform first oxidation of an oxidation layer; fourthly, second oxidation: cooling and boosting pressure on the basis of the third step, and introducing a certain amount of nitrogen and oxygen into the oxidation furnace tube to perform second oxidation of the oxidation layer; fifth, third oxidation: cooling on the basis of the fourth step, keeping the pressure, and introducing a certain amount of nitrogen and oxygen into the oxidation furnace tube to perform third oxidation on the oxidation layer; sixthly, back pressure: keeping the temperature in the step five, and introducing nitrogen to return the pressure to a normal pressure state; and seventhly, taking out the boat. This oxidation divide into three stage, and the oxidation stage lasts the cooling, realizes the process of limit cooling while oxidation, and changes the low pressure environment and go on under little negative pressure environment, improves the oxide layer effect, reduces the loss burden of vacuum pump.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to an oxidation process of a PERC cell.
Background
PERC (passivated emitter and reader cell) solar cells are one of the more popular high-efficiency cells in the current market, and the preparation method is generally as follows; texturing, diffusing, laser doping on the front side, removing PSG on the back side, alkali polishing, oxidizing, depositing a passivation film on the back side, depositing an antireflection film on the front side, laser perforating on the back side, printing a back electrode, a back electric field and a positive electrode, and sintering. For the oxidation process, the existing means is to adopt a process of low pressure and constant temperature in a furnace tube, but the battery manufactured by the process exposes many defects during an EL test, such as EL black spots, EL pits and the like, which seriously affect the qualification rate of the finished battery product, and the low-pressure operating environment can increase the service life burden of a vacuum pump of the oxidation furnace, so that the loss of blades is increased, and the cost is increased.
Disclosure of Invention
In view of the above, the present invention provides an oxidation process for a PERC battery, in which the oxidation is a process after alkali polishing, a process before a passivation film is deposited on the back surface, and the oxidation is divided into three stages, wherein the oxidation stage is continuously cooled, so as to realize the process of cooling and oxidation, change the low-pressure environment and perform the process under the micro-negative pressure environment, improve the effect of an oxidation layer, reduce the burden of a vacuum pump, prolong the service life, and reduce the loss. The specific technical scheme of the invention is as follows.
The oxidation process of the PERC battery is characterized by adopting a tubular oxidation furnace for preparation, and comprises the following steps:
step one, opening a furnace tube to enter a boat: loading the alkali-polished silicon wafer into a boat, placing the wafer on a furnace paddle after the wafer loading is finished to prepare a boat feeding process, introducing nitrogen with a certain flow into the furnace, opening a furnace door, and feeding the boat into a furnace chamber by the furnace paddle;
step two, pressure pumping: after the boat is fed, the furnace door is closed, the temperature is raised, the pressure is pumped, the furnace tube is in a low-pressure state, and meanwhile, suspended impurities brought into the furnace tube when the boat is fed in and out can be removed;
step three, first oxidation: cooling and boosting pressure, and introducing a certain amount of nitrogen and oxygen into an oxidation furnace tube to perform first oxidation of an oxidation layer;
step four, second oxidation: cooling and boosting pressure on the basis of the third step, and introducing a certain amount of nitrogen and oxygen into the oxidation furnace tube to perform second oxidation of the oxidation layer;
step five, third oxidation: cooling on the basis of the fourth step, keeping the pressure, and introducing a certain amount of nitrogen and oxygen into the oxidation furnace tube to perform third oxidation on the oxidation layer;
step six, back pressure: keeping the temperature in the step five, and introducing nitrogen to return the pressure to a normal pressure state;
step seven, taking out of the boat: and (4) opening the furnace door, pulling out the carrier by the furnace paddle, and closing the furnace door after the process is finished.
Further, in the second step, the pressure pumping is performed for 220s, the temperature is raised to 750 ℃ and the pressure is reduced to 160 mbar.
Further, the first oxidation temperature is reduced by 10 degrees, meanwhile, the flow of oxygen is 8000sccm, the flow of large nitrogen is 1000sccm, the pressure in the furnace tube is slowly increased to 700mbr, and a compact oxide film is formed on the surface of the silicon wafer for 300 s.
Further, oxygen flow rate of 8000sccm and large nitrogen flow rate of 1000sccm are continuously introduced for the second oxidation, the temperature is reduced by 30 degrees, the pressure is recovered to a micro negative pressure state of 900mbar, and a compact oxide film is continuously formed on the basis of the first oxide layer for 900 s.
Further, oxygen flow rate of 8000sccm and large nitrogen flow rate of 1000sccm are continuously introduced for the third oxidation, the temperature is reduced by 30 degrees, the pressure is kept in a micro-negative pressure state of 900mbar, and a compact oxide film is continuously formed on the basis of the second oxidation layer for 310 s.
Further, after the third oxidation, the temperature of the last oxidation is maintained, and nitrogen with the flow of 10000sccm is introduced into the furnace tube to return the pressure to the normal pressure.
The invention has the advantages that the existing low-pressure constant-temperature process is changed, the temperature-reducing micro-pressure oxidation process is adopted, a compact oxide layer is formed on the surface of the silicon wafer in stages, annealing and gettering are carried out at the same time, the gettering effect of the surface can be increased in the temperature-reducing process, the micro-pressure state of 900mbar is restored by the second oxidation and the third oxidation, the oxidation effect can be improved, a more compact oxide film is formed compared with the prior art, the surface recombination efficiency is reduced, the proportion of black spots and pocks on the surface is reduced, the hydrophilic diffusion effect of the surface of the silicon wafer is improved, the mechanical damage of a vacuum pump during working can be reduced, the service life of equipment is prolonged, the conversion efficiency of the battery piece is integrally improved, and the cost is reduced.
Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flow diagram of an oxidation process of the present application;
FIG. 2 is a PID experimental data report;
FIG. 3 is a line drawing of a black dot and pockmark ratio;
fig. 4 is a graph comparing the effect of hydrophilic diffusion.
Detailed Description
The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.
An oxidation process of a PERC battery is carried out by adopting a tubular oxidation furnace, and comprises the following steps:
step one, opening a furnace tube to enter a boat: and loading the alkali-polished silicon wafers into a boat, placing the boat on a furnace paddle after the loading is finished to prepare a boat feeding process, introducing nitrogen with the flow of 10000sccm into the furnace, purging the furnace tube, opening the furnace door, and feeding the boat into the furnace chamber by the furnace paddle.
Step two, pressure pumping: and after the boat is fed, the furnace door is closed, the temperature is raised to 720 ℃ for 220s, the pressure is reduced to 160mbar, the furnace tube is in a low-pressure state, suspended impurities brought into the furnace tube during the boat feeding and discharging can be removed, and the influence of particles in the boat feeding and discharging on the cell is reduced during the back oxidation.
Step three, first oxidation: and (3) reducing the temperature and boosting the pressure, introducing nitrogen with the flow rate of 1000sccm and oxygen with the flow rate of 8000sccm into an oxidation furnace tube at the temperature of 710 ℃ to perform first oxidation of the oxidation layer, slowly increasing the pressure in the furnace tube to 700mbr, and continuously forming a compact oxidation film on the single surface of the front side of the silicon wafer for 300 s.
Step four, second oxidation: and (3) reducing the temperature to 680 degrees, continuously introducing 8000sccm of oxygen flow, 1000sccm of large nitrogen flow, recovering the pressure to 900mbar micro negative pressure state for 900s, and annealing and gettering while forming a compact oxide layer on the cell sheet in the micro negative pressure state.
Step five, third oxidation: and (3) reducing the temperature to 650 ℃, continuously introducing 8000sccm of oxygen flow, 1000sccm of large nitrogen flow, keeping the pressure at 900mbar of micro-negative pressure state, and continuously forming a compact oxide film on the basis of the second oxide layer for 310 s.
Step six, back pressure: the time is 100S, the temperature is 650 ℃, nitrogen with the flow rate of 10000sccm is introduced into the furnace tube to restore the pressure to the normal pressure, namely the pressure is 1060 mbar.
Step seven, taking out of the boat: and (4) opening the furnace door, pulling out the carrier by the furnace paddle, and closing the furnace door after the process is finished.
Firstly, the practicability of the method is tested, and the PID test data verifies that the PID monitoring is 1.51% on average and is lower than the set standard by 3.5% as shown in figure 2, so that the condition that the PID of the battery piece is not invalid after the oxidation formula is modified is proved, and the battery piece can be used on line. Wherein the experimental group is the data or effect obtained by the process, the comparative group is the data or effect obtained by the existing low-pressure (150-.
The method can effectively improve the bad proportion of black spots and pockmarks in the EL, simultaneously improves the efficiency to a certain extent, and can effectively solve the problem of the loss of the mechanical pump blade. The specific efficiency improvement is shown in the following table, and the efficiency is improved by 0.015% -0.023%.
| Item | Efficiency of contrast group | Efficiency of the experimental group | Difference in efficiency |
| Data set 1 | 23.1701% | 23.1852% | 0.0151% |
| Data set 2 | 23.2231% | 23.2465% | 0.0233% |
The black dot and pockmark ratio in EL was reduced by about 0.2%, as shown in FIG. 3.
In addition, compared with the hydrophilicity test, as shown in fig. 4, the hydrophilicity of the experimental group is faster and more rapid than that of the comparative group, and the effect is better.
While specific embodiments of the invention have been described in detail with reference to exemplary embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this invention. In particular, reasonable variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the foregoing disclosure, the drawings and the appended claims without departing from the spirit of the invention. Except variations and modifications in the component parts and/or arrangements, the scope of which is defined by the appended claims and equivalents thereof.
Claims (6)
1. The oxidation process of the PERC battery is characterized by adopting a tubular oxidation furnace for preparation, and comprises the following steps:
step one, opening a furnace tube to enter a boat: loading the alkali-polished silicon wafer into a boat, placing the wafer on a furnace paddle after the wafer loading is finished to prepare a boat feeding process, introducing nitrogen with a certain flow into the furnace, opening a furnace door, and feeding the boat into a furnace chamber by the furnace paddle;
step two, pressure pumping: closing the furnace door after the boat is fed, and raising the temperature and pumping pressure to make the interior of the furnace tube be in a low-pressure state;
step three, first oxidation: cooling and boosting pressure, and introducing a certain amount of nitrogen and oxygen into an oxidation furnace tube to carry out primary oxidation of an oxidation layer;
step four, second oxidation: cooling and boosting pressure on the basis of the third step, and introducing a certain amount of nitrogen and oxygen into the oxidation furnace tube to perform second oxidation of the oxidation layer;
step five, third oxidation: cooling on the basis of the fourth step, keeping the pressure, and introducing a certain amount of nitrogen and oxygen into the oxidation furnace tube to perform third oxidation on the oxidation layer;
step six, back pressure: keeping the temperature of the step five, and introducing nitrogen to return the pressure to a normal pressure state;
step seven, taking out of the boat: and (4) opening the furnace door, pulling out the carrier by the furnace paddle, and closing the furnace door after the process is finished.
2. The oxidation process for a PERC cell as claimed in claim 1, wherein the second step of pumping is performed for a time of 220s, the pumping is increased in temperature to 750 ℃ and the pressure is decreased to 160 mbar.
3. The oxidation process of a PERC cell as claimed in claim 2, wherein the first oxidation temperature is reduced by 10 degrees, and simultaneously oxygen flow rate is 8000sccm and large nitrogen flow rate is 1000sccm, the pressure in the furnace tube is slowly increased to 700mbr, and a dense oxide film is formed on the surface of the silicon wafer for 300 s.
4. The oxidation process for the PERC cell as claimed in claim 3, wherein the second oxidation is performed for a period of time of 8000sccm of oxygen, 1000sccm of large nitrogen, 30 ° of temperature decrease, 900mbar of micro-negative pressure recovery, and 900s of time to form a dense oxide film on the basis of the first oxide layer.
5. The oxidation process for the PERC cell as claimed in claim 4, wherein the third oxidation is performed for a period of time of 8000sccm of oxygen, 1000sccm of large nitrogen, 30 ° of temperature decrease, 900mbar of micro-negative pressure, and 310s of time, and the formation of the dense oxide film is continued on the basis of the second oxide layer.
6. The oxidation process for the PERC cell as claimed in claim 1 or 5, wherein after the third oxidation, the temperature of the last oxidation is maintained, and nitrogen gas is introduced into the furnace tube at a flow rate of 10000sccm to return the pressure to normal pressure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210778401.4A CN115036394A (en) | 2022-07-04 | 2022-07-04 | Oxidation process of PERC battery |
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| CN202210778401.4A CN115036394A (en) | 2022-07-04 | 2022-07-04 | Oxidation process of PERC battery |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08109012A (en) * | 1994-10-11 | 1996-04-30 | Tonen Corp | Production of polycrystalline silicon plate |
| CN109742185A (en) * | 2018-12-20 | 2019-05-10 | 横店集团东磁股份有限公司 | A kind of alternating temperature transformation thermal oxidation technology improving crystal silicon double-side cell small particles |
| CN112054091A (en) * | 2020-08-28 | 2020-12-08 | 江苏润阳悦达光伏科技有限公司 | Oxidation process of high-efficiency solar PERC-SE battery |
| CN112466985A (en) * | 2020-10-30 | 2021-03-09 | 江苏润阳悦达光伏科技有限公司 | Low-pressure diffusion process for improving uniformity of diffusion sheet resistance single chip |
| CN112768552A (en) * | 2020-12-11 | 2021-05-07 | 宁波尤利卡太阳能股份有限公司 | Preparation method of double-sided PERC battery |
| CN113421944A (en) * | 2021-05-18 | 2021-09-21 | 平煤隆基新能源科技有限公司 | Oxidation annealing process for improving conversion efficiency of crystalline silicon solar cell |
| CN113964239A (en) * | 2021-10-18 | 2022-01-21 | 横店集团东磁股份有限公司 | Low-voltage diffusion process of solar single crystal PERC |
-
2022
- 2022-07-04 CN CN202210778401.4A patent/CN115036394A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08109012A (en) * | 1994-10-11 | 1996-04-30 | Tonen Corp | Production of polycrystalline silicon plate |
| CN109742185A (en) * | 2018-12-20 | 2019-05-10 | 横店集团东磁股份有限公司 | A kind of alternating temperature transformation thermal oxidation technology improving crystal silicon double-side cell small particles |
| CN112054091A (en) * | 2020-08-28 | 2020-12-08 | 江苏润阳悦达光伏科技有限公司 | Oxidation process of high-efficiency solar PERC-SE battery |
| CN112466985A (en) * | 2020-10-30 | 2021-03-09 | 江苏润阳悦达光伏科技有限公司 | Low-pressure diffusion process for improving uniformity of diffusion sheet resistance single chip |
| CN112768552A (en) * | 2020-12-11 | 2021-05-07 | 宁波尤利卡太阳能股份有限公司 | Preparation method of double-sided PERC battery |
| CN113421944A (en) * | 2021-05-18 | 2021-09-21 | 平煤隆基新能源科技有限公司 | Oxidation annealing process for improving conversion efficiency of crystalline silicon solar cell |
| CN113964239A (en) * | 2021-10-18 | 2022-01-21 | 横店集团东磁股份有限公司 | Low-voltage diffusion process of solar single crystal PERC |
Non-Patent Citations (2)
| Title |
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