CN112466944B - GaN HEMT based on inserted-finger-shaped p-type doped diamond and preparation method - Google Patents

GaN HEMT based on inserted-finger-shaped p-type doped diamond and preparation method Download PDF

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CN112466944B
CN112466944B CN202011389894.XA CN202011389894A CN112466944B CN 112466944 B CN112466944 B CN 112466944B CN 202011389894 A CN202011389894 A CN 202011389894A CN 112466944 B CN112466944 B CN 112466944B
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doped diamond
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CN112466944A (en
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马晓华
武玫
程可
朱青
张濛
侯斌
杨凌
郝跃
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Xidian University
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract

The invention discloses a GaN HEMT based on an inserted finger type p-type doped diamond and a preparation method; the GaN HEMT comprises a substrate, an intermediate layer and a dielectric layer which are arranged from bottom to top; the middle layer comprises a barrier layer and a buffer layer; the source electrode, the drain electrode and the gate electrode respectively penetrate through the dielectric layer to be in contact with the barrier layer; an inter-digital groove is etched in the middle layer along the width direction of the grid, and a dielectric layer right above the inter-digital groove forms a first inter-digital structure; the first finger-insertion structure is located between the gate electrode and the drain electrode in the horizontal direction and adjacent to the gate electrode; a p-type diamond-doped heat dissipation layer grows on the dielectric layer between the grid electrode and the drain electrode; a second inserting finger structure is formed on the lower surface of the p-type doped diamond heat dissipation layer; the second insertion finger structure is in seamless butt joint with the first insertion finger structure; the upper end of the gate electrode extends towards the drain electrode to cover part of the upper surface of the p-type doped diamond heat dissipation layer. The invention can improve the heat dissipation capability of the GaN HEMT in a microwave high-power scene.

Description

GaN HEMT based on inserted-finger-shaped p-type doped diamond and preparation method
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to a GaN (gallium nitride) HEMT (High Electron Mobility Transistor) based on inserted-finger-shaped p-type doped diamond and a preparation method thereof
Background
GaN is used as a representative material of a third-generation semiconductor, and has a very wide application prospect. Due to the characteristics of large forbidden band width of GaN, high electronic saturation velocity and the like, the GaN-based high-power semiconductor laser has unique advantages in high-frequency high-power fields such as military affairs, aerospace, communication and the like. With the increasing integration of semiconductor devices, the accompanying phenomenon of high heat generation is unavoidable, and the self-heating effect accumulation of the devices can not only reduce the basic performances of saturation current, transconductance and the like of the devices, but also can cause the failure of the devices in more serious cases.
GaN itself has a thermal conductivity of only 130W/(m · K) (watt/(meter · kelvin)), and in current GaN HEMTs, commonly used substrates mainly include SiC (silicon carbide) substrates, Si (silicon) substrates, sapphire substrates, and the like. Even if a SiC substrate with high thermal conductivity is adopted, the requirement of the GaN effect tube on heat dissipation in a future microwave high-power scene cannot be met.
Disclosure of Invention
In order to further improve the heat dissipation capability of the GaN HEMT in a microwave high-power scene, the invention provides a GaN HEMT based on an inserted finger-shaped p-type doped diamond and a preparation method thereof.
The technical problem to be solved by the invention is realized by the following technical scheme:
in a first aspect, the invention provides an interdigitated p-type diamond doped GaN HEMT, which comprises a substrate, an intermediate layer and a dielectric layer arranged from bottom to top; the middle layer comprises a barrier layer and a buffer layer made of GaN materials, wherein the barrier layer and the buffer layer are arranged from top to bottom; the GaN HEMT further includes: a source electrode, a drain electrode, and a gate electrode; wherein,
the source electrode, the drain electrode and the gate electrode respectively penetrate through the dielectric layer to be in contact with the barrier layer; wherein the gate electrode is located between the source electrode and the drain electrode in a horizontal direction;
an interdigital groove is etched in the middle layer along the width direction of the grid, and a dielectric layer right above the interdigital groove forms a first interdigital structure; the first finger-insertion structure is located between the gate electrode and the drain electrode in a horizontal direction and adjacent to the gate electrode;
a p-type diamond-doped heat dissipation layer is also grown on the upper surface of the dielectric layer between the gate electrode and the drain electrode; a second inserting finger structure is formed on the lower surface of the p-type doped diamond heat dissipation layer; the second insertion finger structure is in seamless butt joint with the first insertion finger structure;
the upper end of the gate electrode extends towards the drain electrode so as to cover part of the upper surface of the p-type doped diamond heat dissipation layer.
Preferably, the p-type doped diamond heat dissipation layer is made of boron-doped diamond.
Preferably, the thickness of the p-type doped diamond heat dissipation layer is 0.5-1 μm.
Preferably, the length of the p-type doped diamond heat sink layer is greater than or equal to 50% of the horizontal spacing between the gate electrode and the drain electrode, and the p-type doped diamond heat sink layer is not in contact with the drain electrode.
Preferably, the dielectric layer is made of a SiN layer, and the thickness of the SiN layer is 10 nm-60 nm.
Preferably, the barrier layer is made of AlGaN (aluminum gallium nitride).
Preferably, the source electrode and the drain electrode are both of a four-layer metal stack structure composed of titanium, aluminum, nickel and gold from bottom to top.
Preferably, the gate electrode is a double-layer metal stack structure composed of nickel and gold from bottom to top.
In a second aspect, the invention provides a method for preparing an insert finger-shaped p-type doped diamond-based GaN HEMT, which comprises the following steps:
step S1: obtaining an epitaxial substrate; the epitaxial substrate comprises a substrate and an intermediate layer which are arranged from bottom to top; the middle layer comprises a barrier layer and a buffer layer made of GaN materials, wherein the barrier layer and the buffer layer are arranged from top to bottom;
step S2: etching an insert finger type groove on the intermediate layer along a preset gate width direction;
step S3: growing a dielectric layer on the barrier layer by utilizing a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; forming a first finger inserting structure on the grown dielectric layer above the finger inserting groove;
step S4: growing a p-type doped diamond heat dissipation layer on the dielectric layer by an MPCVD (Microwave Plasma Chemical Vapor Deposition) process; forming a second inserting finger structure on the lower surface of the grown p-type doped diamond heat dissipation layer, wherein the second inserting finger structure is in seamless butt joint with the first inserting finger structure;
step S5: carrying out graphical etching on the p-type doped diamond heat dissipation layer based on a metal hard mask;
step S6: preparing a device electric isolation region of the GaN HEMT;
step S7: further etching the dielectric layer to expose a source electrode area required for preparing a source electrode, a drain electrode area required for preparing a drain electrode and a gate groove area required for preparing a gate electrode from the barrier layer below;
step S8: preparing a source electrode and a drain electrode on the barrier layers exposed in the source electrode area and the drain electrode area by sequentially utilizing a photoetching process and a metal evaporation deposition process;
step S9: preparing a gate electrode based on the exposed barrier layer in the gate groove area by sequentially utilizing a photoetching process and a metal evaporation deposition process;
in the horizontal direction, the gate electrode is located between the source electrode and the drain electrode, the p-type doped diamond heat dissipation layer after the patterned etching is located between the gate electrode and the drain electrode, and the first finger insertion structure is located between the gate electrode and the drain electrode and is adjacent to the gate electrode.
Preferably, the p-type doped diamond heat sink layer is a boron doped diamond layer 0.5 μm to 1 μm thick.
In the GaN HEMT based on the inserted-finger-shaped p-type doped diamond, on one hand, the p-type doped diamond heat dissipation layer is arranged on the top of the GaN HEMT, so that the high heat conductivity of the p-type doped diamond is utilized to realize effective heat dissipation. On the other hand, the p-type doped diamond interacts with the conductive channel 2DEG (two-dimensional electron gas) of the GaN HEMT, so that the electric field peak value at the pin of the gate electrode can be reduced, the electric field distribution in the channel is more uniform, and the heat generation of the GaN HEMT is modulated. On the other hand, the interdigital grooves are etched on the intermediate layer, so that the first interdigital structure formed on the dielectric layer is in seamless butt joint with the second interdigital structure formed on the p-type doped diamond heat dissipation layer, the contact area of the p-type doped diamond heat dissipation layer and a lower heat source is increased, the distance between the diamond layer and a channel heat source is reduced, and the effective reduction of the junction temperature of the device is further realized. Based on the synergistic effect of the three factors, the GaN HEMT based on the inserted-finger-shaped p-type doped diamond provided by the invention can effectively improve the heat dissipation capability of the GaN HEMT in a microwave high-power scene.
The present invention will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an interdigitated p-type diamond doped-based GaN HEMT according to an embodiment of the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a schematic view of the GaN HEMT shown in FIG. 1 with an interdigitated trench etched in the gate width direction on the barrier layer;
FIG. 4 is a schematic diagram of another interdigitated p-doped diamond based GaN HEMT according to embodiments of the present invention;
fig. 5 is a flowchart of a method for fabricating an interdigitated p-doped diamond based GaN HEMT according to an embodiment of the present invention;
fig. 6, 7 and 8 together form a schematic diagram of the complete process for fabricating a GaN HEMT in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
In order to improve the heat dissipation capability of the GaN HEMT in a microwave high-power scene, the embodiment of the invention provides the GaN HEMT based on the inserted-finger-shaped p-type doped diamond. Fig. 1 exemplarily shows a front view of the GaN HEMT, and fig. 2 exemplarily shows a top view of the GaN HEMT; referring to fig. 1 and 2, the GaN HEMT includes a substrate, an intermediate layer, and a dielectric layer disposed from bottom to top; the middle layer comprises a barrier layer and a buffer layer made of GaN materials, wherein the barrier layer and the buffer layer are arranged from top to bottom; the GaN HEMT further includes: the source electrode, the drain electrode, and the gate electrode are denoted by symbols S, D and G, respectively.
The source electrode, the drain electrode and the gate electrode respectively penetrate through the dielectric layer to be contacted with the barrier layer; in the horizontal direction, the gate electrode is located between the source electrode and the drain electrode. An inter-digital groove is etched on the middle layer along the width direction of the gate, a first inter-digital structure is formed on the dielectric layer right above the inter-digital groove, and the first inter-digital structure is located between the gate electrode and the drain electrode in the horizontal direction and is adjacent to the gate electrode. A p-type diamond-doped heat dissipation layer is grown on the upper surface of the dielectric layer between the gate electrode and the drain electrode; a second inserting finger structure is formed on the lower surface of the p-type doped diamond heat dissipation layer; the second insertion finger structure is in seamless butt joint with the first insertion finger structure. The upper end of the gate electrode extends towards the drain electrode to cover part of the upper surface of the p-type doped diamond heat dissipation layer.
It is understood that the gate width direction is a width direction of the gate electrode, and the width direction coincides with a length direction of the finger-insertion groove.
In the embodiment of the invention, the depth of the finger-inserting groove etched on the intermediate layer can be various. For example, a finger-inserting groove may be etched on the upper surface of the barrier layer as shown in fig. 3, i.e., the depth of the finger-inserting groove is smaller than the thickness of the barrier layer; or the depth of the inserting finger type groove can be equal to the thickness of the barrier layer, namely, the etching is stopped when the etching depth reaches the surface of the buffer layer; or the depth of the inserting finger type groove can be larger than the thickness of the barrier layer and does not exceed the thickness of the barrier layer and the buffer layer; at this time, the barrier layer in the lithographic pattern is completely removed, and the buffer layer under the barrier layer is also partially etched.
When the GaN HEMT operates under high voltage, the GaN HEMT needs to bear extremely high drain voltage, and the positive center of the depletion region generates electric field lines pointing from the positive center to the gate electrode with low potential, so that an electric field line concentration effect is generated on the gate electrode; therefore, the electric field lines at the pin channel of the gate electrode close to one side of the drain electrode are distributed more densely, the electric field peak value is formed at the edge of the gate electrode, and the heat generation of current is more concentrated at the electric field peak value; that is, the amount of heat generated at the pin of the gate electrode of the GaN HEMT, which is biased toward the drain electrode side, is large, here closer to the upper surface of the GaN HEMT.
In view of this, the embodiment of the invention arranges the p-type doped diamond heat dissipation layer on the top of the GaN HEMT, thereby realizing effective heat dissipation by utilizing the high thermal conductivity characteristic of the p-type doped diamond. In addition, the peak value of the electric field at the pin of the gate electrode can be reduced through the interaction of the p-type doped diamond and the conductive channel 2DEG (two-dimensional electron gas) of the GaN HEMT, so that the electric field distribution in the channel is more uniform, namely, the modulation of the heat generation of the GaN HEMT is realized. And through the interdigital groove etched on the intermediate layer, the first interdigital structure formed on the medium layer is in seamless butt joint with the second interdigital structure formed on the p-type doped diamond heat dissipation layer, so that the contact area between the p-type doped diamond heat dissipation layer and a lower heat source is increased, the distance between the diamond layer and a channel heat source is reduced, and the effective reduction of the junction temperature of the device is further realized. In summary, the GaN HEMT based on the inserted-finger-shaped p-type doped diamond provided by the embodiment of the invention can effectively improve the heat dissipation capability of the GaN HEMT in a microwave high-power scene.
Preferably, in the embodiment of the present invention, the material of the p-type doped diamond heat dissipation layer may be boron-doped diamond.
Preferably, the p-type doped diamond heat sink layer may have a thickness of 0.5 μm to 1 μm. For example, in one preferred embodiment, the p-doped diamond heat sink layer is preferably 1 μm thick. It should be noted that the 1 μm thick p-type doped diamond heat dissipation layer is the preferred thickness for combining the heat dissipation effect and the manufacturing process.
Preferably, the length of the p-type doped diamond heat sink layer is greater than or equal to 50% of the horizontal spacing between the gate electrode and the drain electrode, and the p-type doped diamond heat sink layer is not in contact with the drain electrode.
Preferably, the dielectric layer may be a SiN (silicon nitride) layer, and the thickness of the SiN layer is 10nm to 60 nm. In addition, the material of the dielectric layer can also be Al2O3In this case, the thickness of the dielectric layer can be referred to as the thickness of the SiN layer.
It can be understood that if the dielectric layer is too thick, the heat dissipation effect of the top heat dissipation layer may be affected, so that the thickness of the dielectric layer is determined to be preferably 10nm to 60nm through practical verification.
Preferably, the barrier layer is made of AlGaN, but is not limited thereto.
Preferably, the source electrode and the drain electrode may each have a four-layer metal stack structure composed of ti, al, ni, and au from bottom to top, but are not limited thereto.
Preferably, the gate electrode may be a double-layered metal stack structure composed of nickel and gold from bottom to top. Alternatively, the gate electrode may have a three-layer metal stack structure composed of nickel, gold, and nickel from the bottom to the top.
Preferably, the substrate described above may be a silicon substrate, a sapphire substrate, or a SiC substrate or the like.
In addition, in an alternative embodiment, as shown in fig. 4, the GaN HEMT provided in the embodiment of the present invention may further have a device electrical isolation region; the device electrical isolation region is used for electrically isolating devices. Particularly, when a plurality of GaN HEMTs are prepared simultaneously, the device electric isolation region can effectively prevent the active regions of the adjacent GaN HEMTs from generating electric contact. In the embodiment, the preparation of the electric isolation region of the device can be realized by etching the dielectric layer, the barrier layer and part of the buffer layer; for details of the preparation process of the device electrical isolation region, reference may be made to the prior art, and details of the embodiments of the present invention are not repeated.
The above completes the description of the GaN HEMT based on the interdigitated p-type diamond doped.
The embodiment of the invention also provides a preparation method of the GaN HEMT, which corresponds to the GaN HEMT based on the inserted-finger-shaped p-type doped diamond provided by the embodiment of the invention. As shown in fig. 5, the method may include the steps of:
step S1: obtaining an epitaxial substrate; the epitaxial substrate comprises a substrate and an intermediate layer arranged from bottom to top; the middle layer comprises a barrier layer and a buffer layer made of GaN materials, wherein the barrier layer and the buffer layer are arranged from top to bottom.
The substrate may be a silicon substrate, a sapphire substrate, or a SiC substrate, among others. The material of the barrier layer is preferably AlGaN, but it is not limited thereto. In addition, for convenience, the GaN HEMT to be prepared is hereinafter collectively referred to as a sample.
Step S2: and etching an interdigital groove on the intermediate layer along a preset gate width direction.
Here, the structure of the finger-type groove can be seen in fig. 3.
Specifically, the step S2 may include the following sub-steps:
step S2-a: the sample was washed.
For example, the sample may be first ultrasonically cleaned for 3 minutes at an ultrasonic intensity of 3.0W/cm2(watts/square centimeter). The washed sample was then placed in a stripping solution at about 60 ℃ and heated in a water bath for 5 minutes. Then, the sample after further cleaning is sequentially placed into an acetone solution and an ethanol solution for ultrasonic cleaning for 3 minutes, wherein the ultrasonic intensity can be 3.0W/cm2. Finally, the sample was rinsed with ultra pure water and blown dry with nitrogen.
Step S2-b: and photoetching a photoetching pattern for preparing the finger-inserting type groove on the barrier layer.
For example, the sample is baked at a high temperature of about 200 ℃ for 5 minutes, and then photoresist coating and spin coating are performed on the barrier layer, wherein the spin coating thickness is 0.77 μm. Thereafter, the sample was baked at a high temperature of 90 ℃ for l minutes. And then, putting the sample subjected to gluing and whirl coating into a photoetching machine to expose the photoresist in the photoetching pattern. And finally, putting the exposed sample into a developing solution to remove the photoresist in the photoetching pattern, and carrying out ultra-pure water washing and nitrogen blow-drying on the photoresist.
Step S2-c: and etching the intermediate layer in the photoetching pattern by utilizing an ICP (inductively Coupled Plasma) etching process.
Wherein, the etching depth can be less than or equal to the thickness of the barrier layer; alternatively, the etching depth may be greater than the thickness of the barrier layer and not greater than the thickness of the barrier layer plus the buffer layer.
For example, if the barrier layer has a thickness of 10nm to 30nm, the etching conditions may include:
the power of an upper electrode and a lower electrode of the ICP photoetching machine is respectively 50W and 15W; BCl3(boron trichloride) flow rate of 20sccm (standard cubic center meter per minute), Cl2The flow rate of the (chlorine) is 8sccm, the working pressure is 5mTorr (millitorr), medium-speed etching is adopted, the etching rate is 20nm/min (nanometer/minute), and the etching depth can be 100 nm.
Step S2-d: and sequentially putting the sample into an acetone solution, a stripping solution, an acetone solution and an ethanol solution for cleaning to remove the photoresist outside the photoetching pattern.
Step S3: growing a dielectric layer on the barrier layer by utilizing a PECVD process; and forming a first interdigital structure on the grown dielectric layer above the interdigital groove.
The dielectric layer may be made of SiN (silicon nitride) or Al2O3(alumina), etc., without being limited thereto.
For example, when a SiN layer with a thickness of 20 μm needs to be grown, a specific PECVD process may include: by NH3(Ammonia) and SiH4(silane) as a reaction gas, the temperature of the epitaxial substrate was 250 ℃, the pressure in the reaction chamber was 600mTorr (millitorr), and the rf power was 22W.
It is understood that a 10nm to 60nm thick dielectric layer is very thin relative to the barrier layer. Therefore, after the dielectric layer is grown, the finger insertion groove on the sample still exists, namely, the dielectric layer forms a first finger insertion structure above the finger insertion groove.
Preferably, the thickness of the dielectric layer generated in this step may be 10nm to 60 nm.
Step S4: growing a p-type diamond-doped heat dissipation layer on the dielectric layer by an MPCVD (plasma-chemical vapor deposition) process; and forming a second insertion finger structure on the lower surface of the grown p-type doped diamond heat dissipation layer, wherein the second insertion finger structure is in seamless butt joint with the first insertion finger structure.
For example, when a 1 μm thick p-doped diamond heat sink layer is grown on a SiN dielectric layer by MPCVD, specific process parameters may include: gas using 3% CH4(methane) as a carbon source and H2(hydrogen) dilution; by adding B (CH) to the gas3)3(trimethylborane) to control boron content to give a mixed gas, the B (CH)3)3Likewise using H2Diluting; the proportion of boron and carbon in the mixed gas is not less than 1000ppm (parts per million concentration), and the total flow rate of the gas is 400sccm (standard cubic center meter per minute) to 600 sccm; a gas pressure of 200mTorr, a deposition rate of 0.13 μm/h (micrometers per hour) to 0.2 μm/h; the temperature of the substrate is 800-1000 ℃; the substrate is an epitaxial substrate after a dielectric layer is grown; the microwave power is 1500W-3500W.
Step S5: and carrying out patterned etching on the p-type doped diamond heat dissipation layer based on the metal hard mask.
Specifically, the step S5 may further include the following sub-steps:
step 5-a: a hard mask pattern is lithographically patterned on the p-type doped diamond heat spreading layer.
For example, a sample on which a p-type doped diamond heat dissipation layer is grown can be baked at 200 ℃ for 5 minutes; then, the sample is subjected to glue spreading and spin coating of stripping glue, and the thickness of the spin coating can be 0.35 mu m; the sample was further baked at a temperature of 200 ℃ for 5 minutes. Then, coating photoresist and spin coating the photoresist on the coated stripper, wherein the spin coating thickness can be 0.77 mu m; the samples were baked at 90 ℃ for 1 minute. And then, putting the sample subjected to gluing and spinning into a photoetching machine for exposure, so as to form a hard mask pattern on the upper surface of the p-type doped diamond heat dissipation layer. And finally, putting the exposed sample into a developing solution to remove the photoresist and the stripping glue in the hard mask pattern, and carrying out ultra-pure water washing and nitrogen blow drying on the photoresist and the stripping glue.
Step 5-b: the metal hard mask is evaporated.
The metal hard mask referred to herein may be a metal hard mask composed of two metals of Ti (titanium) and Ni (nickel). For example, using the metal hard mask, a sample having a hard mask pattern may be placed in a plasma stripper for a bottom film treatment of about 5 minutes, wherein the bottom film treatment removes primarily residual photoresist and stripper. Then, the sample is put into an electron beam evaporation table until the vacuum degree of a reaction chamber of the electron beam evaporation table reaches 2 multiplied by 10-6After Torr, metal Ti and metal Ni can be sequentially evaporated on the photoresist of the hard mask pattern. Then, stripping the sample after metal evaporation is finished so as to remove the metal, the photoresist and the stripping glue outside the hard mask pattern; finally, the sample was rinsed with ultra pure water and blown dry with nitrogen.
Step 5-c: and etching the p-type doped diamond heat dissipation layer outside the hard mask pattern by utilizing an ICP (inductively coupled plasma) process.
For example, when the p-type doped diamond heat dissipation layer has a thickness of 1 μm, the etching conditions may include: the ICP etcher has a bias power of about 100W, an ICP source power of about 500W, a helium flow of about 40sccm (standard cubic center ionizer per minute, a flow of 1 cubic centimeter per minute (1 ml/min)), an oxygen flow of about 30sccm, a working pressure of about 10mTorr (millitorr), an etching rate of about 180nm/min, and an etching depth of about 1 μm.
It is understood that after the step 5-c is completed, a portion of the dielectric layer is exposed. The exposed partial area is mainly used for preparing three electrodes subsequently.
And 5-d: the metal hard mask is etched away.
Here, the metal hard mask may be chemically etched away with an etchant; specifically, the etching solution may be a solution containing an oxidizing agent, a speed-increasing agent, a mask stabilizer, an etching surface-smoothing accelerator, and the like.
Step S6: and etching the dielectric layer, the barrier layer and the buffer layer to form the device electric isolation region of the GaN HEMT.
Here, the device electrical isolation region of the etching type can be seen as shown in fig. 4. Related preparation processes of the device electrical isolation region belong to the existing mature technology, and the embodiment of the invention is not described in detail.
Step S7: and further etching the dielectric layer to enable the barrier layer below to expose a source electrode area required for preparing a source electrode, a drain electrode area required for preparing a drain electrode and a gate groove area required for preparing a gate electrode.
Wherein, in the horizontal direction, the gate groove region is located between the source electrode region and the drain electrode region, the p-type doped diamond heat dissipation layer patterned and etched in the step S5 is located between the gate electrode region and the drain electrode region, and the first finger insertion structure is located between the gate groove region and the drain electrode region and adjacent to the gate groove region. Thus, for the completed GaN HEMT, in the horizontal direction, the gate electrode is located between the source electrode and the drain electrode region, the p-type doped diamond heat dissipation layer is located between the gate electrode and the drain electrode, and the first and second seamlessly butted finger structures are located between and adjacent to the gate electrode.
Specifically, the step S7 may include the following sub-steps:
step S7-a: and photoetching a source electrode pattern, a gate groove pattern and a drain electrode pattern on the dielectric layer.
For example, the sample may be first baked at 200 ℃ for 5 minutes; then, the dielectric layer was coated with a release coating having a thickness of about 0.35 μm and the sample was baked at 200 ℃ for 5 minutes. Next, the resist was applied and spun onto the strip to a thickness of about 0.77 μm, and the sample was baked at 90 ℃ for a further minute. And then, putting the sample subjected to glue coating and spin coating into a photoetching machine for exposure, thereby forming a source electrode pattern, a gate groove pattern and a drain electrode pattern on the dielectric layer. And finally, putting the exposed sample into a developing solution to remove the photoresist and the stripping glue in the source electrode pattern, the grid groove pattern and the drain electrode pattern, and then carrying out ultrapure water washing and nitrogen blow-drying on the sample.
Step S7-b: and etching the dielectric layer in the source electrode pattern, the gate groove pattern and the drain electrode pattern by utilizing an ICP (inductively coupled plasma) process.
Specifically, the etching depth is based on reaching the surface of the barrier layer, that is, the etching is stopped when the surface of the barrier layer is etched. Thus, the barrier layer can be exposed to a gate groove region required for preparing a gate electrode, a source electrode region required for preparing a source electrode, and a drain electrode region required for preparing a drain electrode.
For example, when the thickness of the dielectric layer is 20nm, the ICP etching conditions may include: the reaction gas being CF4(carbon tetrafluoride) and O2(oxygen), the pressure of the reaction chamber is l0mTorr, the radio frequency power of an upper electrode and the radio frequency power of a lower electrode of the ICP etching machine are 100W and l0W respectively, and the etching depth is based on reaching the surface of the barrier layer, namely the etching is stopped when the surface of the barrier layer is etched.
Step S8: and preparing a source electrode and a drain electrode on the barrier layers exposed in the source electrode area and the drain electrode area by sequentially utilizing a photoetching process and a metal evaporation deposition process.
Specifically, the step S8 may include the following sub-steps:
step 8-a: and respectively photoetching a source electrode pattern and a drain electrode pattern on the source electrode area and the drain electrode area.
For example, the sample may be first baked at 200 ℃ for 5 minutes; then, the dielectric layer was coated with a release coating having a thickness of about 0.35 μm and the sample was baked at 200 ℃ for 5 minutes. Subsequently, the photoresist was gummed and spun down to a thickness of about 0.77 μm on the stripper and the sample was baked for another minute at 90 ℃. And then, putting the sample subjected to gluing and whirl coating into a photoetching machine to expose the photoresist in the source electrode pattern and the drain electrode pattern, thereby forming the source electrode pattern and the drain electrode pattern on the dielectric layer. And finally, putting the exposed sample into a developing solution to remove the photoresist and the stripping glue in the source electrode pattern and the drain electrode pattern, and then carrying out ultrapure water washing and nitrogen blow drying on the sample.
Step 8-b: the ohmic metal is evaporated.
The ohmic metal may be a metal stack structure composed of four layers of metals, i.e., titanium, aluminum, nickel, and gold, from bottom to top, but is not limited thereto.
For example, the sample with the source electrode pattern and the drain electrode pattern may be first put into a plasma stripper for a base film treatment, wherein the treatment time is about 5 minutes. Then, the sample is put into an electron beam evaporation table until the vacuum degree of a reaction chamber of the electron beam evaporation table reaches 2 multiplied by 10-6After Torr, sequentially evaporating four metals of titanium, aluminum, nickel and gold in the source electrode pattern and the drain electrode pattern; metal is also evaporated on the photoresist outside the source electrode pattern and the drain electrode pattern. Therefore, the ohmic metal, the photoresist, and the stripper may be removed outside the source electrode pattern and the drain electrode pattern by subsequently stripping the sample in which the evaporation of the ohmic metal is completed. Finally, the sample was rinsed with ultra pure water and blown dry with nitrogen.
Step 8-c: and carrying out annealing treatment on the stripped sample.
Specifically, the stripped sample is placed into a rapid thermal annealing furnace for annealing, so that ohmic metal of the source electrode and the drain electrode sinks to the barrier layer, and ohmic contact between the ohmic metal and the heterojunction channel is formed. For example, the process conditions for annealing may include: annealing atmosphere is N2(Nitrogen), annealing temperature 830 ℃ and annealing time 30 seconds.
Step S9: and sequentially utilizing a photoetching process and a metal evaporation deposition process to prepare a gate electrode based on the exposed barrier layer in the gate groove area.
Specifically, the step S9 may include the following sub-steps:
step S9-a: respectively photoetching a gate groove area on the barrier layer and part of the surface of the p-type diamond-doped heat dissipation layer to obtain a gate electrode graph required by the preparation of a gate electrode;
for example, the sample may be first baked at 200 ℃ for 5 minutes; then, the sample was subjected to glue application and spin coating of a release film having a thickness of 0.35 μm, and then baked at 200 ℃ for 5 minutes. Subsequently, the sample was subjected to photoresist coating and spin coating with a spin coating thickness of 0.77 μm, and then baked at 90 ℃ for 1 minute. Then, putting the sample subjected to gluing and whirl coating into a photoetching machine, and exposing the photoresist on the surface of the barrier layer exposed in the gate groove region and part of the surface of the p-type doped diamond heat dissipation layer to form a gate electrode graph; finally, the exposed sample is put into a developing solution to remove the photoresist and the stripping glue in the gate electrode pattern, and the gate electrode pattern is subjected to ultra-pure water washing and nitrogen blow drying.
Step S9-b: and preparing a gate electrode on the gate electrode pattern by using a metal evaporation deposition process.
Specifically, a gate metal is evaporated on the surface of the sample. The gate metal can be a bimetallic stack structure composed of nickel and gold from bottom to top; alternatively, the gate metal may be a three-layer metal stack structure composed of nickel, gold, and nickel from top to bottom, or the like.
For example, a sample with a gate electrode pattern may be first placed in a plasma stripper for about 5 minutes of bottom film treatment. Then, the sample is put into an electron beam evaporation table until the vacuum degree of a reaction chamber of the electron beam evaporation table reaches 2 multiplied by 10-6After Torr, the upper gate metal can be evaporated on the photoresist inside and outside the gate electrode pattern. And then, stripping the sample after the gate metal evaporation is finished so as to remove the gate metal, the photoresist and the stripping glue outside the gate electrode pattern. And finally, washing the p-type diamond-doped heat dissipation layer by using ultrapure water and drying by using nitrogen.
The above is a process for manufacturing a GaN HEMT.
For the sake of clarity, fig. 6, 7 and 8 show schematic diagrams of the fabrication process of the GaN HEMT in a graphical manner. Wherein, the symbol (a) represents an epitaxial substrate; the mark (b) represents a sample after the finger-inserting type groove is etched on the barrier layer; mark (c) represents the sample after the medium layer is grown; the mark (d) represents a sample of a p-type doped diamond heat dissipation layer grown on the dielectric layer; the mark (e) represents the sample after the metal hard mask is manufactured on the sample of the p-type doped diamond heat dissipation layer; mark (f) represents the sample after the patterned etching of the p-type doped diamond heat dissipation layer based on the metal hard mask; mark (g) represents the sample with the metal hard mask etched away; label (h) represents the sample after preparation of the electrically isolated region of the device; marking (i) a sample after etching the dielectric layer to form a source electrode area, a drain electrode area and a grid groove area; label (j) represents the sample after preparation of the source and drain electrodes; the symbol (k) represents the finished GaN HEMT after the gate electrode is prepared. In fig. 6, 7, and 8, the structure filled with gray represents the dielectric layer.
In the preparation method of the GaN HEMT based on the inserted-finger-shaped p-type doped diamond, provided by the embodiment of the invention, the p-type doped diamond heat dissipation layer is prepared on the top of the GaN HEMT, so that the efficient heat dissipation is realized by utilizing the high heat conductivity of the p-type doped diamond heat dissipation layer. And moreover, the inter-digital groove is etched on the intermediate layer, so that a first inter-digital structure formed by the medium layer is in seamless butt joint with a second inter-digital structure formed by the p-type doped diamond heat dissipation layer, the contact area between the p-type doped diamond heat dissipation layer and a heat source below the p-type doped diamond heat dissipation layer is increased, the distance between the diamond layer and a channel heat source is reduced, and the junction temperature of the device is further effectively reduced. Therefore, the GaN HEMT based on the inserted-finger-shaped p-type doped diamond provided by the invention can effectively improve the heat dissipation capability of the GaN HEMT in a microwave high-power scene.
In the description of the specification, reference to the description of the term "one embodiment", "some embodiments", "an example", "a specific example", or "some examples", etc., means that a particular feature or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A GaN HEMT based on an inserted finger-shaped p-type doped diamond is characterized by comprising a substrate, an intermediate layer and a dielectric layer which are arranged from bottom to top; the middle layer comprises a barrier layer and a buffer layer made of GaN materials, wherein the barrier layer and the buffer layer are arranged from top to bottom; the GaN HEMT further includes: a source electrode, a drain electrode, and a gate electrode; wherein,
the source electrode, the drain electrode and the gate electrode respectively penetrate through the dielectric layer to be in contact with the barrier layer; wherein the gate electrode is located between the source electrode and the drain electrode in a horizontal direction;
an interdigital groove is etched in the middle layer along the width direction of the grid, and a dielectric layer right above the interdigital groove forms a first interdigital structure; the first finger-insertion structure is located between the gate electrode and the drain electrode in a horizontal direction and adjacent to the gate electrode;
a p-type doped diamond heat dissipation layer is grown on the upper surface of the dielectric layer between the gate electrode and the drain electrode; a second inserting finger structure is formed on the lower surface of the p-type doped diamond heat dissipation layer; the second insertion finger structure is in seamless butt joint with the first insertion finger structure;
the upper end of the gate electrode extends towards the drain electrode so as to cover part of the upper surface of the p-type doped diamond heat dissipation layer.
2. The GaN HEMT of claim 1, wherein said p-type doped diamond heat sink layer is boron doped diamond.
3. The GaN HEMT of claim 1, wherein said p-doped diamond heat sink layer has a thickness of 0.5 to 1 μm.
4. The GaN HEMT of claim 1, wherein the p-doped diamond heat sink layer has a length greater than or equal to 50% of the horizontal spacing between the gate electrode and the drain electrode, and wherein the p-doped diamond heat sink layer is not in contact with the drain electrode.
5. The GaN HEMT of claim 1, wherein the dielectric layer is made of a SiN layer, and the thickness of the SiN layer is 10 nm-60 nm.
6. The GaN HEMT of claim 1, wherein the barrier layer is AlGaN.
7. The GaN HEMT of claim 1, wherein said source electrode and said drain electrode are each a four-layer metal stack structure consisting of titanium, aluminum, nickel, and gold from bottom to top.
8. The GaN HEMT of claim 1, wherein the gate electrode is a double-layer metal stack structure consisting of nickel and gold bottom-up.
9. A preparation method of an insert finger-shaped p-type doped diamond-based GaN HEMT is characterized by comprising the following steps:
step S1: obtaining an epitaxial substrate; the epitaxial substrate comprises a substrate and an intermediate layer which are arranged from bottom to top; the middle layer comprises a barrier layer and a buffer layer made of GaN materials, wherein the barrier layer and the buffer layer are arranged from top to bottom;
step S2: etching an insert finger type groove on the intermediate layer along a preset gate width direction;
step S3: growing a dielectric layer on the barrier layer by utilizing a PECVD process; forming a first finger inserting structure on the grown dielectric layer above the finger inserting groove;
step S4: growing a p-type doped diamond heat dissipation layer on the dielectric layer by an MPCVD process; forming a second insertion finger structure on the lower surface of the grown p-type doped diamond heat dissipation layer, wherein the second insertion finger structure is in seamless butt joint with the first insertion finger structure;
step S5: carrying out graphical etching on the p-type doped diamond heat dissipation layer based on a metal hard mask;
step S6: preparing a device electric isolation region of the GaN HEMT;
step S7: further etching the dielectric layer to expose a source electrode area required for preparing a source electrode, a drain electrode area required for preparing a drain electrode and a gate groove area required for preparing a gate electrode from the barrier layer below;
step S8: preparing a source electrode and a drain electrode on the barrier layers exposed in the source electrode area and the drain electrode area by sequentially utilizing a photoetching process and a metal evaporation deposition process;
step S9: preparing a gate electrode based on the exposed barrier layer in the gate groove area by sequentially utilizing a photoetching process and a metal evaporation deposition process;
in the horizontal direction, the gate electrode is located between the source electrode and the drain electrode, the p-type doped diamond heat dissipation layer after the patterned etching is located between the gate electrode and the drain electrode, and the first finger insertion structure is located between the gate electrode and the drain electrode and is adjacent to the gate electrode.
10. The method of claim 9, wherein the p-doped diamond heat sink layer is a boron doped diamond layer 0.5 μ ι η to 1 μ ι η thick.
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