CN112466807A - 一种超薄晶圆减薄以及背面金属蒸镀的工艺方法 - Google Patents

一种超薄晶圆减薄以及背面金属蒸镀的工艺方法 Download PDF

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CN112466807A
CN112466807A CN202011336926.XA CN202011336926A CN112466807A CN 112466807 A CN112466807 A CN 112466807A CN 202011336926 A CN202011336926 A CN 202011336926A CN 112466807 A CN112466807 A CN 112466807A
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严立巍
文锺
符德荣
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Shaoxing Tongxincheng Integrated Circuit Co ltd
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Abstract

本发明公开一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，包括环状保护、键合、薄化减厚、浸泡脱离、支撑保护和转移蒸镀。本发明利用外围外环支撑保护结合亚膜可以制作超薄晶圆的研磨蚀刻工艺，既能避免破片，亦能提高最边缘部份的良率；可以使得晶圆薄片可在不受应力的情况下脱胶并传送转移；使得薄晶圆在外加圆环的支撑保护下转移至金属膜环治具上，可以进行镀金属膜的工艺；环状支撑保护相对于周边厚度较厚的硅片或是玻璃载板的方法，成本较低且不会造成晶圆周边良率的损失。解决了现有技术中研磨后晶圆外围厚度较厚，将会损失最少3‑5％的良率，且最后必须切除外围才能进行切割工艺，增加生产成本，影响加工效率。

Description

一种超薄晶圆减薄以及背面金属蒸镀的工艺方法
技术领域
本发明属于超薄晶圆加工领域，具体涉及一种超薄晶圆减薄以及背面金属蒸镀的工艺方法。
背景技术
现有技术制作超薄晶圆，其中研磨后晶圆外围厚度较厚，将会损失最少3-5％的良率，且最后必须切除外围才能进行切割工艺，增加生产成本，影响加工效率。因此若能将环状的保护支撑在工艺中以治具或外加的材料完成，则晶圆本身可维持全面积最薄且均匀厚度，既能避免破片，亦能提高最边缘部份的良率。
针对上述提出的问题，现设计一种超薄晶圆减薄以及背面金属蒸镀的工艺方法。
发明内容
针对现有技术的不足，本发明的目的在于提供一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，解决了现有技术中研磨后晶圆外围厚度较厚，将会损失最少3-5％的良率，且最后必须切除外围才能进行切割工艺，增加生产成本，影响加工效率。
本发明的目的可以通过以下技术方案实现：
一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，包括如下步骤：
S1、环状保护
将研磨胶带的侧端环绕贴合有金属环，形成环状保护；
S2、键合
将晶圆背面向上，正面与研磨胶带键合；
S3、薄化减厚
对晶圆的背面进行蚀刻，减少晶圆的厚度，然后解除应力，继续减少晶圆的厚度；
S4、浸泡脱离
将晶圆与研磨胶带浸泡至有机溶剂中，溶剂从边缘逐渐渗入晶圆与研磨胶带的键合面，去除黏着力后，研磨胶带应重力在溶剂浸泡中脱离；
S5、支撑保护
将晶圆转移至金属环上，使得晶圆得到金属环的支撑和保护；
S6、转移蒸镀
将受到金属环支撑保护的晶圆转移走，在晶圆背面镀上金属膜。
进一步的，所述S3中蚀刻后晶圆厚度减为105—110um，然后解除应力，使得晶圆3厚度减为100—105um。
进一步的，所述S4中控制浸泡时间为1.5—2.5h。
本发明的有益效果：
1、本发明利用外围外环支撑保护结合亚膜可以制作超薄晶圆的研磨蚀刻工艺，既能避免破片，亦能提高最边缘部份的良率；
2、本发明可以使得晶圆薄片可在不受应力的情况下脱胶并传送转移；
3、本发明使得薄晶圆在外加圆环的支撑保护下转移至金属膜环治具上，可以进行镀金属膜的工艺；
4、本发明中环状支撑保护相对于周边厚度较厚的硅片或是玻璃载板的方法，成本较低且不会造成晶圆周边良率的损失。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例的键合结构示意图；
图2是本发明实施例的晶圆减薄结构示意图
图3是本发明实施例的支撑保护结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“开孔”、“上”、“下”、“厚度”、“顶”、“中”、“长度”、“内”、“四周”等指示方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的组件或元件必须具有特定的方位，以特定的方位构造和操作，因此不能理解为对本发明的限制。
实施例1
一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，包括如下步骤：
S1、环状保护
将研磨胶带2的侧端环绕贴合有金属环1，形成环状保护；
S2、键合
将晶圆3背面向上，正面与研磨胶带2键合，如图1所示；
S3、薄化减厚
对晶圆3的背面进行蚀刻，其晶圆3厚度减为110um，然后解除应力，使得晶圆3厚度减为105um，如图2所示；
S4、浸泡脱离
将晶圆3与研磨胶带2浸泡至有机溶剂中，溶剂从边缘逐渐渗入晶圆3与研磨胶带2的键合面，去除黏着力后，研磨胶带2应重力在溶剂浸泡中脱离，控制浸泡时间为2h；
S5、支撑保护
将晶圆3转移至金属环1上，使得晶圆3得到金属环1的支撑和保护，如图3所示；
S6、转移蒸镀
将受到金属环1支撑保护的晶圆3转移走，在晶圆3背面镀上金属膜4。
实施例2
一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，包括如下步骤：
S1、环状保护
将研磨胶带2的侧端环绕贴合有金属环1，形成环状保护；
S2、键合
将晶圆3背面向上，正面与研磨胶带2键合，如图1所示；
S3、薄化减厚
对晶圆3的背面进行蚀刻，其晶圆3厚度减为108um，然后解除应力，使得晶圆3厚度减为103um，如图2所示；
S4、浸泡脱离
将晶圆3与研磨胶带2浸泡至有机溶剂中，溶剂从边缘逐渐渗入晶圆3与研磨胶带2的键合面，去除黏着力后，研磨胶带2应重力在溶剂浸泡中脱离，控制浸泡时间为1.5h；
S5、支撑保护
将晶圆3转移至金属环1上，使得晶圆3得到金属环1的支撑和保护，如图3所示；
S6、转移蒸镀
将受到金属环1支撑保护的晶圆3转移走，在晶圆3背面镀上金属膜4。
实施例3
一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，包括如下步骤：
S1、环状保护
将研磨胶带2的侧端环绕贴合有金属环1，形成环状保护；
S2、键合
将晶圆3背面向上，正面与研磨胶带2键合，如图1所示；
S3、薄化减厚
对晶圆3的背面进行蚀刻，其晶圆3厚度减为105um，然后解除应力，使得晶圆3厚度减为100um，如图2所示；
S4、浸泡脱离
将晶圆3与研磨胶带2浸泡至有机溶剂中，溶剂从边缘逐渐渗入晶圆3与研磨胶带2的键合面，去除黏着力后，研磨胶带2应重力在溶剂浸泡中脱离，控制浸泡时间为2.5h；
S5、支撑保护
将晶圆3转移至金属环1上，使得晶圆3得到金属环1的支撑和保护，如图3所示；
S6、转移蒸镀
将受到金属环1支撑保护的晶圆3转移走，在晶圆3背面镀上金属膜4。
实施例4
一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，包括如下步骤：
S1、环状保护
将研磨胶带2的侧端环绕贴合有金属环1，形成环状保护；
S2、键合
将晶圆3背面向上，正面与研磨胶带2键合，如图1所示；
S3、薄化减厚
对晶圆3的背面进行蚀刻，其晶圆3厚度减为107um，然后解除应力，使得晶圆3厚度减为101um，如图2所示；
S4、浸泡脱离
将晶圆3与研磨胶带2浸泡至有机溶剂中，溶剂从边缘逐渐渗入晶圆3与研磨胶带2的键合面，去除黏着力后，研磨胶带2应重力在溶剂浸泡中脱离，控制浸泡时间为2h；
S5、支撑保护
将晶圆3转移至金属环1上，使得晶圆3得到金属环1的支撑和保护，如图3所示；
S6、转移蒸镀
将受到金属环1支撑保护的晶圆3转移走，在晶圆3背面镀上金属膜4。
在本说明书的描述中，参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。

Claims (3)

1.一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，其特征在于，包括如下步骤：
S1、环状保护
将研磨胶带(2)的侧端环绕贴合有金属环(1)，形成环状保护；
S2、键合
将晶圆(3)背面向上，正面与研磨胶带(2)键合；
S3、薄化减厚
对晶圆(3)的背面进行蚀刻，减少晶圆(3)的厚度，然后解除应力，继续减少晶圆(3)的厚度；
S4、浸泡脱离
将晶圆(3)与研磨胶带(2)浸泡至有机溶剂中，溶剂从边缘逐渐渗入晶圆(3)与研磨胶带(2)的键合面，去除黏着力后，研磨胶带(2)应重力在溶剂浸泡中脱离；
S5、支撑保护
将晶圆(3)转移至金属环(1)上，使得晶圆(3)得到金属环(1)的支撑和保护；
S6、转移蒸镀
将受到金属环(1)支撑保护的晶圆(3)转移走，在晶圆(3)背面镀上金属膜(4)。
2.根据权利要求1所述的一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，其特征在于，所述S3中蚀刻后晶圆(3)厚度减为105—110um，然后解除应力，使得晶圆3厚度减为100—105um。
3.根据权利要求1所述的一种超薄晶圆减薄以及背面金属蒸镀的工艺方法，其特征在于，所述S4中控制浸泡时间为1.5—2.5h。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314399A (zh) * 2021-06-02 2021-08-27 美新半导体(天津)有限公司 一种键合圆片的磨片封装结构和磨片方法
CN118098933A (zh) * 2024-04-25 2024-05-28 汉轩微电子制造(江苏)有限公司 晶圆背面金属化的方法及晶圆

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