CN112447859A - 具有包括多层系统的金属化层的堆叠状的多结太阳能电池 - Google Patents
具有包括多层系统的金属化层的堆叠状的多结太阳能电池 Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 claims abstract description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
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- 238000000034 method Methods 0.000 description 7
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- 238000010438 heat treatment Methods 0.000 description 5
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- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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Abstract
一种具有包括多层系统的金属化层的堆叠状的多结太阳能电池，其中，多结太阳能电池具有构成该多结太阳能电池的下侧的锗衬底、锗子电池和至少两个III‑V族子电池，金属化层的多层系统按顺序地具有第一层、第二层、第三层和至少一个金属的第四层：包括金和锗的第一层具有至少2nm和至多50nm的层厚度D1；包括钛的第二层具有至少10nm和至多300nm的厚度D2；包括钯或镍或铂的第三层具有至少5nm和至多300nm的层厚度D3；至少一个金属的第四层具有至少2μm的厚度，金属化层的多层系统覆盖至少一个第一表面区段和第二表面区段，并且与第一表面区段和第二表面区段材料锁合地连接，其中，第一表面区段由电介质的隔离层构成，第二表面区段由锗衬底或III‑V族层构成。
Description
技术领域
本发明涉及具有包括多层系统的金属化层(Metallisierung)的堆叠状的多结太阳能电池(Mehrfachsolarzelle)。
背景技术
已经用于半导体晶片的金属化的不同方法。例如借助由正极涂料(Positivlack)或负极涂料(Negativlack)制成的涂料掩模(Lackmaske)来产生所期望的金属结构，其中，例如借助物理气相沉积面式地施加金属。替代地，使用直接地仅施加所期望的金属结构的印刷方法，例如丝网印刷(Siebdruck)或分配头
为了减少遮蔽太阳能电池正侧，可以借助敷镀贯通开口
从背侧接通正侧。这种太阳能电池也称为金属贯穿孔(英语metal wrap through，缩写MWT)太阳能电池。
除了敷镀贯通开口的不同制造方法之外，还已知不同的金属化方法——尤其以便在敷镀贯通开口的区域内实现可靠的金属化。
由F.Clement的《Die Metal Wrap Through Solarzelle-Entwicklung undCharaktersierung》，博士论文，2009年2月已知一种用于由多晶硅制成的MWT单结太阳能电池的制造工艺，其中，借助UV激光或IR激光在mc硅衬底层中产生敷镀贯通开口。然后才借助磷扩散沿着敷镀贯通开口的上侧和侧面以及太阳能电池的下侧产生发射层。借助丝网印刷以导电的贯通膏(Via-Paste)(例如银膏)填充所述敷镀贯通开口。
由E.Oliva等人的《III-V multi-junction metal-wrap-through(MWT)concentrator solar cells》，议事录，第32届欧洲PV太阳能会议暨展览会，慕尼黑，2016年，1367-1371页已知一种具有敷镀贯通开口的倒置生长型GalnP/AlGaAs太阳能电池结构，其中，使具有pn结的太阳能电池结构外延地生长，并且紧接着借助干法蚀刻产生敷镀贯通开口。然后以隔离层对贯通开口
的侧面进行涂覆，接着以电镀铜填充贯通开口。
由US 9 680 035 B1中已知一种太阳能电池堆叠，该太阳能电池堆叠包括在具有背侧接通的正侧的GaAs衬底上的多个III-V族子电池，其中，借助湿法化学蚀刻工艺产生从太阳能电池的上侧穿过子电池延伸到尚未变薄的衬底层中的孔，并且该孔仅通过衬底层的变薄才向下开口。在变薄之前，将金属的接通面布置在太阳能电池堆叠上侧上，以隔离层对孔的连接的上侧和侧面进行涂覆，然后将金属层施加到金属化的接通面和隔离层上。
为了金属层良好地附着在电介质(例如二氧化硅或氮化硅)上，通常使用钛。但是，由于差的附着，将Ti用于Ge和III-V族半导体的接通。例如，银、钯或金可以实现在由锗或III-V族半导体制成的半导体层上的可靠且持久的附着。然而，诸如银、钯或金的贵金属显示出对电介质的附着不足。
发明内容
在这种背景下，本发明的任务在于说明一种扩展现有技术的设备。
通过具有根据本发明的特征的多结太阳能电池来解决该任务。本发明的有利构型是优选的实施方式。
根据本发明的主题，提供一种具有包括多层系统的金属化层的堆叠状的多结太阳能电池，其中，该多结太阳能电池彼此相继地按顺序地(in der genannten Reihenfolge)具有构成该多结太阳能电池的下侧的锗衬底、锗子电池和至少两个III-V族子电池。
金属化层的多层系统按顺序地具有第一层、第二层、第三层和至少一个金属的第四层：包括金和锗的第一层具有至少2nm和至多50nm的层厚度D1；包括钛的第二层具有至少10nm和至多300nm的厚度D2；包括钯或镍或铂的第三层具有至少5nm和至多300nm的层厚度D3；至少一个金属的第四层具有至少2μm的厚度。
金属化层的多层系统覆盖至少一个第一表面区段和第二表面区段，并且与第一表面区段和第二表面区段材料锁合(stoffschlüssig)地连接，其中，第一表面区段由电介质的隔离层构成，第二表面区段由锗衬底或III-V族层构成。
应当理解，对多层系统——例如通常对于金属化层——进行退火(即热处理)。
在一种扩展方案中，在多层金属系统的热处理中，温度优选地处于350°至420°之间的范围内。
优选地，借助灯加热(即借助所谓的快速热退火(RTA)工艺)执行热处理。
热处理的温度尤其为至少350℃。
由此达到金锗层的共晶温度，由此才可以实现钛层与电介质层之间的连接。
此外应当理解，根据一种替代的实施方式，层分别由所提及的材料组成，其中，术语“由……组成”包括如下：诸如杂质的其他物质也可以被包括或包含。
此外应当理解，Ge子电池具有锗或由锗组成，其中，由锗组成的层除了锗以外可能还包含其他物质——尤其掺杂剂，但也可能包含杂质。
相应地，也适用于III-V族子电池，其具有一种或多种III主族以及V主族的材料或由这些材料组成。
惊喜的是已经表明，所提出的层系统不仅在电介质上、而且在半导体上非常可靠且耐久地附着。金锗层的低的层厚度会导致不均匀的、而是局部位置对于Ti层的可渗透性，这可以实现在钛层和电介质的隔离层之间的局部连接。
另一方面，金锗层的低的层厚度足以实现金锗层与Ge层或III-V族子电池的可靠的材料锁合。
因此，金属化层的多层系统为优化制造工艺以及关于金属化的(尤其在敷镀接通方面的)构型开启许多可能性。尤其可以节省工艺步骤、附加的或不同的金属结构。
因此，根据本发明的多结太阳能电池示出一种特别成本有利且有效的解决方案。
根据第一实施方式，所述多结太阳能电池具有背侧接通的正侧，其中，该半导体晶片具有至少一个敷镀通孔(Durchgangskontaktloch)，所述至少一个敷镀通孔从所述多结太阳能电池的上侧延伸穿过子电池直至下侧并且具有连贯
的侧壁和椭圆形横截面的外周，并且该敷镀通孔的侧壁被电介质的隔离层覆盖。
在另一实施方式中，第四层包括银并且具有至少2.5μm和至多6μm的层厚度。
根据另一扩展方案，该多层系统具有包括金的第五层，该第五层具有至少50nm和至多1μm的层厚度D5。
在另一扩展方案中，电介质层包括SiO2和/或Si3N4，或由SiO2和/或Si3N4组成。
根据另一实施方式，多结太阳能电池包括III-V族覆盖层，该III-V族覆盖层构成正侧并且具有150-500nm的厚度和至少1.86eV的带隙。覆盖层例如由InGaP组成或包括InGaP。
在另一实施方式中，金属化层的多层系统从多结太阳能电池的上侧沿着侧壁延伸穿过敷镀通孔直至多结太阳能电池的下侧。
附图说明
以下参照附图进一步阐述本发明。在此，以相同的名称标记相同类型的部分。所示的实施方式是极其示意性的——即距离以及横向和竖直延伸不成比例并且彼此之间不具有可推导的几何关系，除非另有说明。在此示出：
图1示出堆叠状的多结太阳能电池的根据本发明的第一实施方式的截面图，该堆叠状的多结太阳能电池具有背侧接通的正侧以及作为金属化层的多层系统；
图2示出多结太阳能电池的根据本发明的一种实施方式的背侧视图；
图3示出金属化层的多层系统的根据本发明的第一实施方式的截面图。
具体实施方式
图1的图示以截面图示出堆叠状的多结太阳能电池10，该堆叠状的多结太阳能电池具有包括多层系统12的金属化层和背侧接通的正侧。
多结太阳能电池10具有上侧10.1和下侧10.2以及从上侧10.1延伸至下侧10.2的贯通开口12。多结太阳能电池10按顺序地包括构成下侧10.1的锗衬底14、跟随锗衬底的锗子电池16、第一III-V族子电池18以及在所示的实施例中构成上侧10.2的第二III-V族子单元20。
贯通开口22具有侧面22.1，其中，该侧面22.1如同圆柱体的包覆面一样连贯地构造并且在截面中具有例如圆形或椭圆形的卵形(oval)形状。
贯通开口22的侧面22.1以及上侧10.1的、下侧10.2的与贯通开口22邻接的区域被以电介质的隔离层24覆盖。
在电介质的隔离层24上构成金属化层的多层系统12，其中，该多层系统12从半导体晶片10的上侧10.1的与电介质的隔离层24邻接的区域沿着贯通开口22的侧面22.1延伸至构造在下侧10.2上的电介质的隔离层24的与贯通开口邻接的区域。
因此，多层系统12在半导体晶片10的上侧10.1上延伸超过电介质的隔离层24，并且不仅与电介质的隔离层24、而且与半导体晶片10(在此第二III-V族子电池20)的上侧10.1材料锁合地连接。
下侧10.2的未被电介质的隔离层24覆盖的部分也被金属化层的多层系统12覆盖。
在图2的图示中示出根据第一实施方式的多结太阳能电池的背侧视图。以下仅阐述与图1的图示的区别。
多结太阳能电池10具有恰好两个贯通开口22。多层系统12的围绕贯通开口22构造的区域通过金属化层的多层系统12的板状
的区段连接，并且被电介质的隔离层24围绕。
半导体晶片的下侧10.2的剩余表面被多层系统12面式地覆盖。
在图3的图示中更具体地示出根据第一实施方式的多层系统。以下仅阐述与图1的图示的区别。
多层系统12包括五层。包括金和锗的第一层M1具有至多50nm的层厚度，该第一层构成与电介质层24和半导体晶片10邻接的最下层。
在第一层M1上跟随包括钛的第二层M2，该第二层具有至少10nm的层厚度。第三层M3包括钯、镍或铂并且具有至少5nm的层厚度。
例如包括银的第四金属层具有至少2μm的层厚度。在所示的实施例中，多层系统12包括作为最上层的第五金属层(例如包括金)，该第五金属层具有至少50nm的层厚度。
Claims (8)
1.一种堆叠状的多结太阳能电池(10)，所述堆叠状的多结太阳能电池具有包括多层系统(12)的金属化层，其中，
-所述多结太阳能电池(10)按顺序地彼此相继地具有锗衬底(14)、锗子电池(16)和至少两个III-V族子电池(18，20)，所述锗衬底构成所述多结太阳能电池(10)的下侧(10.2)；
-所述金属化层的多层系统(12)按顺序地具有第一层(M1)、第二层(M2)、第三层(M3)和至少一个金属的第四层(M4)，其中，所述第一层包括金和锗并且具有至少2nm和至多50nm的层厚度D1，所述第二层包括钛并且具有至少10nm和至多300nm的层厚度D2，所述第三层包括钯或镍或铂并且具有至少5nm和至多300nm的层厚度D3，所述至少一个金属的第四层具有至少2μm的层厚度D4；
-所述金属化层的多层系统(12)覆盖至少一个第一表面区段和第二表面区段，并且所述金属化层的多层系统不仅与所述第一表面区段而且与所述第二表面区段材料锁合地连接；其中，
-所述第一表面区段由电介质的隔离层(24)构成，而所述第二表面区段由所述锗衬底(14)或III-V族层构成。
2.根据权利要求1所述的堆叠状的多结太阳能电池(10)，其特征在于，所述多结太阳能电池具有背侧接通的正侧，其中，
-所述半导体晶片具有如下的至少一个敷镀通孔(22)：所述至少一个敷镀通孔从所述多结太阳能电池(10)的上侧(10.1)延伸穿过所述子电池(16，18，20)直至所述下侧(10.2)并且具有连贯的侧壁(22.1)和椭圆形横截面的外周；
-所述敷镀通孔(22)的侧壁(22.1)被电介质的隔离层(24)覆盖。
3.根据权利要求1或2所述的堆叠状的多结太阳能电池(10)，其特征在于，所述第四层(M4)包括银并且具有至少2.5μm和至多6μm的层厚度D4。
4.根据以上权利要求中任一项所述的堆叠状的多结太阳能电池(10)，其特征在于，所述多层系统(12)具有包括金的第五层(M5)，所述第五层具有至少50nm和至多1μm的层厚度D5。
5.根据以上权利要求中任一项所述的堆叠状的多结太阳能电池(10)，其特征在于，所述电介质层(24)包括SiOx和/或SiNx，或由SiOx和/或SiNx组成。
6.根据以上权利要求中任一项所述的堆叠状的多结太阳能电池(10)，其特征在于，所述电介质层(24)包括无定形硅层。
7.根据以上权利要求中任一项所述的堆叠状的多结太阳能电池(10)，其特征在于，所述多结太阳能电池(10)包括III-V族覆盖层(30)，所述III-V族覆盖层构成所述正侧(10.1)并且具有150-500nm的厚度和至少1.86eV的带隙。
8.根据以上权利要求中任一项所述的堆叠状的多结太阳能电池(10)，其特征在于，所述金属化层的多层系统(12)从所述多结太阳能电池(10)的上侧(10.1)沿着所述侧壁(22.1)延伸穿过所述敷镀通孔(22)直至所述多结太阳能电池(10)的下侧(10.2)。
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