CN112447861B - 具有介电的隔离层系统的堆叠状的多结太阳能电池 - Google Patents
具有介电的隔离层系统的堆叠状的多结太阳能电池 Download PDFInfo
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Abstract
一种堆叠状的多结太阳能电池，其具有介电隔离层，多结太阳能电池按顺序地彼此相继地具有构造多结太阳能电池的下侧的锗衬底、锗子电池，至少两个III‑V族子电池；隔离层系统具有层序列，所述层序列由至少一个最下方的隔离层和至少一个最上方的隔离层组成，至少一个最下方的隔离层与所述多结太阳能电池第一表面区段材料锁合地连接，至少一个最上方的隔离层构造隔离层系统的上侧，多结太阳能电池的金属化层与第二表面区段材料锁合地且导电地连接，并且与隔离层系统的上侧的一个区段材料锁合地连接，第二表面区段邻接在多结太阳能电池的第一表面区段上，其中，最上方的隔离层包括非晶硅或由非晶硅组成。
Description
技术领域
本发明涉及一种具有介电的隔离层系统的堆叠状的多结太阳能电池(Mehrfachsolarzelle)。
背景技术
已知不同的用于半导体晶片的钝化和金属化的方法。例如借助于由正极涂料(Positivlack)或负极涂料(Negativlack)制成的涂料掩模(Lackmaske)在隔离层上产生所期望的金属结构，其中，例如借助物理气相沉积面式地施加金属。
替代地，使用仅直接施加所期望的金属结构的印刷方法，例如丝网印刷(Siebdruck)或分配头
为了减少遮蔽太阳能电池的正侧，能够借助敷镀贯通开口从背侧接通正侧。这种太阳能电池也被称为金属贯穿孔技术(英语metal wrap through，缩写MWT)太阳能电池。
除了敷镀贯通开口的不同的制造方法外，还已知不同的金属化方法，以便尤其在敷镀贯通开口的区域中实现可靠的隔离和金属化。
由US 2013/0220396 A1已知一种硅基上的MWT太阳能电池。由US 2014/0174518A1同样已知一种具有改善的钝化层序列的硅基的太阳能电池结构。
由E.Oliva等人的《III-V multi-junction metal-wrap-through(MWT)concentrator solar cells》，会议论文集，第32届欧洲PV太阳能会议和展览会，慕尼黑，2016年，第1367-1371页已知一种具有敷镀贯通开口的倒置生长的GalnP/AlGaAs太阳能电池结构，其中，使具有pn结的太阳能电池结构外延地生长，并且紧接着借助干法蚀刻来产生敷镀贯通开口。然后以隔离层对贯通开口的侧面进行涂覆，接着以电镀铜填充贯通开口。
由US 9 680 035 B1已知一种太阳能电池堆叠，该太阳能电池堆叠由GaAs衬底上的多个III-V族子电池组成，该GaAs衬底具有背侧接通的正侧，其中，通过湿法化学蚀刻工艺产生从太阳能电池的上侧穿过子电池延伸到尚未变薄的衬底层中的孔，并且该孔仅通过衬底层变薄才向下开口。
在变薄之前，将金属的接通面布置在太阳能电池堆叠上侧上，以隔离层对孔的连接的上侧和侧面进行涂覆，然后将金属层施加到金属化的接通面并且施加到隔离层上。
为了金属层良好地粘附在电介质上，例如粘附在二氧化硅或氮化硅上，通常使用钛。相对地，例如借助银、钯或金锗实现由锗或III-V族半导体组成的半导体层上的可靠且持久的粘附。
发明内容
在这种背景下，本发明的任务在于说明一种对现有技术做出扩展的设备。
该任务通过具有根据本发明的特征的堆叠状的多结太阳能电池来解决。本发明的有利构型是优选的实施方式。
在本发明的主题中提供一种具有介电的隔离层系统的堆叠状的多结太阳能电池，其中，多结太阳能电池按顺序地彼此相继地具有锗衬底、锗子电池和至少两个III-V族子电池，所述锗衬底构造多结太阳能电池的下侧。
隔离层系统具有以下层序列：该层序列由至少一个最下方的隔离层和至少一个最上方的隔离层组成，所述至少一个最下方的隔离层与多结太阳能电池的第一表面区段材料锁合(stoffschlüssig)地连接，所述至少一个最上方的隔离层构造隔离层系统的上侧。
多结太阳能电池的金属化层(Metallisierung)与第二表面区段材料锁合地且导电地连接，该第二表面区段与多结太阳能电池的第一表面区段邻接。
此外，金属化层与隔离层系统的上侧的区段材料锁合地连接。
最上方的隔离层包括非晶硅或由非晶硅组成。
可以理解，第一表面区段和第二表面区段构造在多结太阳能电池的上侧上或在多结太阳能电池的下侧上。
应注意，第一表面区段大部分或完全被介电层覆盖，该介电层优选地包括至少一个二氧化硅层。第二表面区段大多或完全被III-V族材料覆盖。
相应地，表面区段要么由Ge衬底构造，要么由构造半导体晶片的上侧的层(例如III-V族子电池或III-V族盖层(Capschicht)，即覆盖层)构造。在此可以理解，与硅的金属化不同，必须使用完全不同的技术来实现尽可能持久耐用的且尽可能低电阻性的连接。
此外可以理解，Ge子电池具有锗或由锗组成，其中，由锗组成的层必要时还包除锗之外的其他物质(尤其是掺杂剂)，而且包含杂质。
相应地也适用于III-V族子电池，该III-V族子电池具有III主族或V主族的一个或多个材料或由这些材料组成。
无定形硅层(α-Silizium-Schicht)确保与许多不同的金属化层之间的可靠且持久的粘附。由此尤其能够实现用于半导体表面的典型金属化层(尤其是锗，而且III-V族半导体材料)与介电层之间的材料连接。
在此，能够以简单的方式在唯一的沉积过程中(例如等离子体辅助化学气相沉积、APCVD或原子层沉积)产生整个隔离层系统。
一个优点在于，隔离层系统因此不需要任何其他工艺步骤，并且另一方面，开启优化制造工艺以及在金属化层的构型方面(优选在敷镀贯通开口方面)的许多可能性。
尤其能够节省工艺步骤、附加的或不同的金属结构。由此，多结太阳能电池代表一种特别成本有利且有效的解决方案。
另一优点是，在具有Ge衬底的III-V族太阳能电池堆叠中，不仅在隔离层的表面上构造金属化层，而且在III-V族太阳能电池的表面上和/或在Ge衬底的表面上构造金属化层。
因此，金属层必须可靠地且可重复地构造与隔离层以及与锗表面或III-V族表面的材料连接，同样，金属层必须可靠地建立与锗表面和/或III-V族表面的电阻性接通。
在第一实施方式中，最下方的隔离层包括SiO2和/或Si3N4或由SiO2和/或Si3N4组成。
在另一实施方式中，隔离层系统具有另外的至少一个中间隔离层，其中，至少一个中间隔离层包括SiO2和/或Si3N4或由SiO2和/或Si3N4组成。在此可以理解，最下方的隔离层具有与中间隔离层不同的材料。
在另一实施方式中，多结太阳能电池具有背侧接通的正侧，其中，半导体晶片具有至少一个敷镀通孔，所述至少一个敷镀通孔从多结太阳能电池的上侧通过子电池延伸至下侧，所述至少一个敷镀通孔具有连贯的侧壁和平行于表面的椭圆形截面图的外周，并且敷镀通孔的侧壁被介电的隔离层系统覆盖。
在一种扩展方案中，隔离层系统上的金属化层从多结太阳能电池的上侧沿着侧壁通过敷镀通孔延伸到多结太阳能电池的下侧。
在另一实施方式中，金属化层包括多层系统。在一种扩展方案中，多层系统包括AuGe/Ti/Pd/Ag/Au层序列或Pd/Au/Ge/Ti/Pd/Ag/Au层序列。尤其AuGe/Ti/Pd/Ag/Au层序列是一种广为传播且被证明可行的层序列，用于在锗层上实现金属化层。
尤其已证明Pd/Au/Ge/Ti/Pd/Ag/Au层序列对于聚光太阳能电池(CPV)可行。因为与Ti相比，Pd在1μm至3μm的波长范围内具有更高的反射率或电导率，所以基于所谓的“背侧反射器”得出对于太阳能电池的另一优点。
在一种替代的扩展方案中，多层系统具有包含镍的层或包含铝的层作为最下方的层。
附图说明
以下参照附图更详细地阐述本发明。在此，相同类型的部件标注有相同的附图标记。所示出的实施方式是高度示意性的，即——距离、横向和垂直延伸不是成比例的，并且——除非另有说明——否则彼此不具有任何可推导的几何关系。附图示出：
图1示出具有介电的隔离层系统的多结太阳能电池的第一实施方式的局部视图；
图2示出具有介电隔离系统的多结太阳能电池的另一实施方式；
图3示出具有介电隔离系统的多结太阳能电池的另一实施方式；
图4示出另一实施方式的多结太阳能电池的背侧视图。
具体实施方式
图1示出堆叠状的多结太阳能电池10的表面的局部视图。该表面由半导体层构造，例如包括锗或III-V族半导体的层。在上侧10.1的第一表面区段A1上是由最下方的隔离层M1和最上方的隔离层M2组成的介电的隔离层系统24。
最下方的隔离层M1与多结太阳能电池10的上侧10.1材料锁合地连接。最下方的隔离层包括SiO2和/或Si3N4，或由SiO2和/或Si3N4组成。
隔离层系统24的上侧由最上方的隔离层M2构造，其中，最上方的隔离层M2由无定形硅(α-Silizium)构成。
在与第一表面区段A1邻接的第二表面区段A2上以及在隔离层系统24的上侧上构造有金属化层12。金属化层与多结太阳能电池10的上侧10.1材料锁合地且导电地连接。此外，金属化层12与隔离层系统24的上侧——即与无定形硅层M2——材料锁合地连接。
在图2的示图中示出另一实施方式。以下仅阐述与图1的示图的不同之处。另一实施方式包括表面区段A1的部分和表面区段A2的部分作为局部视图。
在第一表面区段A1中，介电层序列24在最下方的隔离层M1和最上方的隔离层M2之间包括两个中间隔离层M3和M4。
两个中间隔离层M3和M4分别包括SiO2和/或Si3N4，或分别由SiO2和/或Si3N4组成。在此，下方的隔离层M1具有与两个中间隔离层M3和M4中的至少一个中间隔离层不同的材料。
在表面区段A1的区域的局部视图中，在介电的层序列24上，对于金属化层12，层系统构造成五个金属层12.1、12.2、12.3、12.4、12.5的序列，构造成AuGe/Ti/Pd/Ag/Au层序列或Pd/Au/Ge/Ti/Pd/Ag/Au层序列，其中，作为层系统的第一金属层12.1，也就是说，AuGe层或Pd层与位于下方的隔离层系统24的最上方的隔离层M2的表面材料锁合地连接。此外，在表面区段A2的区域中，第一金属层12.1与多结太阳能电池的导电的半导体表面材料锁合地连接。
换句话说，在所示出的局部视图中，五个金属层12.1、12.2、12.3、12.4、12.5的序列在上侧10.1处覆盖隔离层系统24的上侧，即上方的隔离层M2的表面。
此外，在所示出的局部视图中，金属化层12(作为表面区段A2的部分)覆盖多结太阳能电池的表面。
在图3的示图中示出通过开口的横截面。以下仅仅阐述与图1以及图2的示图的不同之处。
堆叠状的多结太阳能电池10具有开口22，该开口具有侧壁22.1。在Ge衬底14上构造多个III-V族子电池16、18和20，该Ge衬底自身优选同样构造成子电池。
隔离层系统24在上侧10.1上从第一表面区段A1经由第二表面区段A2穿过开口22延伸至下侧10.2。开口在上侧10.1处具有大于下侧10.1的直径。换句话说，开口构造成锥形。
在此，隔离层系统24在开口中环绕地完全覆盖侧壁22.1，以便防止开口22中的金属化层将各个子电池14、16、18和20短接。
金属化层12与多结太阳能电池10的正侧10.1材料锁合地且导电地连接，并且随后完全覆盖布置在正侧10.1上的隔离层系统24和开口的侧面22.1，以及在下侧10.2上覆盖隔离层系统24的一部分，以便在下侧10.2上构造背侧接通面。由此，正侧能够借助背侧接通表面与背侧或下侧10.2电连接。
在下侧10.2上，通过隔离层系统24的区域间隔开的导电的半导体背侧(即Ge衬底12的背侧)同样被金属化层12覆盖。因此，多结太阳能电池的两个接通部均能够与下侧10.2连接。
在图4的图示中示出结合图3的附图示出的实施方式的下侧10.2的俯视图。以下仅阐述与图3的图示的不同之处。
多结太阳能电池10的下侧10.2大部分(即超过70％)被金属化层12覆盖，以便多结太阳能电池10的背侧低电阻性地连接。
正侧10.1通过两个敷镀通孔——即借助两个开口22——与背侧连接。在此，围绕开口22的两个区域借助印制导线电连接，该开口构造成用于正侧10.1的背侧接通部。
出于隔离的原因，背侧接通区域通过隔离区域与金属化层12的区域分离，该金属化层与多结太阳能电池10的背侧电连接。
Claims (6)
1.一种堆叠状的多结太阳能电池(10)，所述堆叠状的多结太阳能电池具有介电的隔离层系统(24)，其中，
所述多结太阳能电池(10)按顺序地彼此相继地具有锗衬底(14)、锗子电池(16)和至少两个III-V族子电池(18，20)，所述锗衬底构造所述多结太阳能电池(10)的下侧(10.2)；
所述多结太阳能电池(10)的上侧由所述III-V族子电池构造或者由III-V族盖层构造；
所述隔离层系统(24)具有如下的层序列：所述层序列由至少一个最下方的隔离层(M1)和至少一个最上方的隔离层(M2)组成，其中，所述至少一个最下方的隔离层与所述多结太阳能电池(10)的第一表面区段材料锁合地连接，所述至少一个最上方的隔离层构造所述隔离层系统(24)的上侧；
所述多结太阳能电池(10)的金属化层(12)与所述多结太阳能电池(10)的第二表面区段材料锁合地且导电地连接，并且所述多结太阳能电池的金属化层与所述隔离层系统(24)的上侧的区段材料锁合地连接，其中，所述第二表面区段与所述多结太阳能电池(10)的第一表面区段邻接；其中，
所述最上方的隔离层(M2)包括非晶硅或由非晶硅组成；
所述第一表面区段(A1)和所述第二表面区段(A2)构造在所述多结太阳能电池(10)的上侧上，或构造在所述多结太阳能电池(10)的下侧上，
所述多结太阳能电池(10)具有背侧接通的正侧，其中，
半导体晶片具有如下的至少一个敷镀通孔(22)：所述至少一个敷镀通孔从所述多结太阳能电池(10)的上侧(10.1)穿过所述子电池(16，18，20)延伸至所述下侧(10.2)，并且所述至少一个敷镀通孔具有连贯的侧壁(22.1)并且具有平行于表面的椭圆形截面图的外周；
所述敷镀通孔(22)的侧壁(22.1)被所述介电的隔离层系统(24)覆盖，
所述金属化层(12)在所述隔离层系统(24)上从所述多结太阳能电池(10)的上侧(10.1)沿着所述侧壁(22.1)穿过所述敷镀通孔(22)延伸至所述多结太阳能电池(10)的下侧(10.2)。
2.根据权利要求1所述的堆叠状的多结太阳能电池(10)，其特征在于，所述最下方的隔离层(24)包括SiO2和/或Si3N4，或由SiO2和/或Si3N4组成。
3.根据权利要求1或2所述的堆叠状的多结太阳能电池(10)，其特征在于，所述隔离层系统(24)具有另外的至少一个中间隔离层(M3，M4)，其中，所述至少一个中间隔离层(M3，M4)包括SiO2和/或Si3N4，或由SiO2和/或Si3N4组成。
4.根据权利要求1或2所述的堆叠状的多结太阳能电池(10)，其特征在于，所述金属化层包括多层系统(12)。
5.根据权利要求4所述的堆叠状的多结太阳能电池(10)，其特征在于，所述多层系统包括AuGe/Ti/Pd/Ag/Au层序列或Pd/Au/Ge/Ti/Pd/Ag/Au层序列。
6.根据权利要求4所述的堆叠状的多结太阳能电池(10)，其特征在于，所述多层系统具有包含镍的层或包含铝的层作为最下方的层。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412249A (en) * | 1993-03-31 | 1995-05-02 | Kabushiki Kaisha Toshiba | Semiconductor device having layered electrode |
| CN102292825A (zh) * | 2009-06-22 | 2011-12-21 | Lg电子株式会社 | 太阳能电池及其制造方法 |
| CN103715276A (zh) * | 2012-09-28 | 2014-04-09 | 茂迪股份有限公司 | 太阳能电池及其模组 |
| US9680035B1 (en) * | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5425816A (en) * | 1991-08-19 | 1995-06-20 | Spectrolab, Inc. | Electrical feedthrough structure and fabrication method |
| US20060231130A1 (en) * | 2005-04-19 | 2006-10-19 | Sharps Paul R | Solar cell with feedthrough via |
| JP2007165658A (ja) * | 2005-12-14 | 2007-06-28 | Rohm Co Ltd | Ｐｉｎフォトダイオード及び光受信装置 |
| EP1993143A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung |
| NL2005261C2 (en) * | 2010-08-24 | 2012-02-27 | Solland Solar Cells B V | Back contacted photovoltaic cell with an improved shunt resistance. |
| KR101738000B1 (ko) * | 2011-06-20 | 2017-05-19 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US11646388B2 (en) * | 2012-09-14 | 2023-05-09 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US9263601B2 (en) * | 2012-12-21 | 2016-02-16 | Sunpower Corporation | Enhanced adhesion of seed layer for solar cell conductive contact |
| US20210126140A1 (en) * | 2018-01-19 | 2021-04-29 | Array Photonics, Inc. | Surface mount solar cell having low stress passivation layers |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412249A (en) * | 1993-03-31 | 1995-05-02 | Kabushiki Kaisha Toshiba | Semiconductor device having layered electrode |
| CN102292825A (zh) * | 2009-06-22 | 2011-12-21 | Lg电子株式会社 | 太阳能电池及其制造方法 |
| CN103715276A (zh) * | 2012-09-28 | 2014-04-09 | 茂迪股份有限公司 | 太阳能电池及其模组 |
| US9680035B1 (en) * | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
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