CN112424959A - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN112424959A
CN112424959A CN201980045780.2A CN201980045780A CN112424959A CN 112424959 A CN112424959 A CN 112424959A CN 201980045780 A CN201980045780 A CN 201980045780A CN 112424959 A CN112424959 A CN 112424959A
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CN
China
Prior art keywords
layer
well layer
well
light
wavelength
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Pending
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CN201980045780.2A
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English (en)
Inventor
樊本杰
张景琼
李逸群
杨鸿志
林宗杰
陈和谦
邓顺达
谢政璋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaistar Lighting Xiamen Co Ltd
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Kaistar Lighting Xiamen Co Ltd
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Filing date
Publication date
Application filed by Kaistar Lighting Xiamen Co Ltd filed Critical Kaistar Lighting Xiamen Co Ltd
Publication of CN112424959A publication Critical patent/CN112424959A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开一种发光二极管，其具有一多重量子阱结构，以产生具有宽波段蓝光光谱的一光束，且光束包含具有第一波长的第一子光束与具有第二波长的第二子光束，其中，第一波长与所述第二波长之间的差值介于1nm至50nm之间，且发光二极管所发出的所述光束在操作电流密度120mA/mm2下具有大于0.45的光电转换效率。

Description

PCT国内申请，说明书已公开。

Claims (25)

  1. PCT国内申请，权利要求书已公开。
CN201980045780.2A 2019-04-19 2019-11-12 发光二极管 Pending CN112424959A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201910318051.1A CN111834498B (zh) 2019-04-19 2019-04-19 发光二极管的外延发光结构
CN2019103180511 2019-04-19
PCT/CN2019/117645 WO2020211346A1 (zh) 2019-04-19 2019-11-12 发光二极管

Publications (1)

Publication Number Publication Date
CN112424959A true CN112424959A (zh) 2021-02-26

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Family Applications (2)

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CN201910318051.1A Active CN111834498B (zh) 2019-01-19 2019-04-19 发光二极管的外延发光结构
CN201980045780.2A Pending CN112424959A (zh) 2019-04-19 2019-11-12 发光二极管

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201910318051.1A Active CN111834498B (zh) 2019-01-19 2019-04-19 发光二极管的外延发光结构

Country Status (3)

Country Link
US (3) US11257980B2 (zh)
CN (2) CN111834498B (zh)
WO (1) WO2020211346A1 (zh)

Citations (3)

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CN102822995A (zh) * 2010-02-03 2012-12-12 克里公司 带具有变化的阱厚度的多量子阱结构的基于iii族氮化物的发光二极管结构
CN105514235A (zh) * 2015-12-25 2016-04-20 扬州德豪润达光电有限公司 一种用于光电器件的多重量子阱结构

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CN1619847A (zh) 2004-08-03 2005-05-25 金芃 Ⅲ－ⅴ族高亮度复合颜色或者白光的发光二极管
KR100565894B1 (ko) * 2005-07-06 2006-03-31 (주)룩셀런트 3족 질화물 반도체 발광소자의 활성층을 제어하는 방법
US20070051962A1 (en) 2005-09-08 2007-03-08 Mu-Jen Lai Gallium nitride semiconductor light emitting device
CN100411211C (zh) 2006-10-10 2008-08-13 华中科技大学 单片集成白光二极管
JP5389054B2 (ja) * 2008-02-15 2014-01-15 クリー インコーポレイテッド 白色光出力を生成する広帯域発光デバイス・ランプ
CN101714604A (zh) 2009-11-13 2010-05-26 南京大学 一种宽光谱白光led结构及生长方法
KR101211657B1 (ko) * 2010-10-04 2012-12-13 한국광기술원 질화물계 반도체 발광소자
CN102104097A (zh) * 2011-01-14 2011-06-22 映瑞光电科技(上海)有限公司 多量子阱结构、发光二极管和发光二极管封装件
CN102104098A (zh) * 2011-01-14 2011-06-22 映瑞光电科技(上海)有限公司 多量子阱结构、发光二极管和发光二极管封装件
US8779412B2 (en) * 2011-07-20 2014-07-15 Samsung Electronics Co., Ltd. Semiconductor light emitting device
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KR102175320B1 (ko) 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
JP6433246B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JPWO2016098273A1 (ja) * 2014-12-19 2017-09-28 ソニー株式会社 活性層構造、半導体発光素子および表示装置
US10439110B2 (en) 2015-09-01 2019-10-08 Signify Holding B.V. Meat lighting system with improved efficiency and red oversaturation
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KR102487411B1 (ko) 2017-10-31 2023-01-12 엘지디스플레이 주식회사 발광소자 패키지 및 전자기기
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102822995A (zh) * 2010-02-03 2012-12-12 克里公司 带具有变化的阱厚度的多量子阱结构的基于iii族氮化物的发光二极管结构
CN102623595A (zh) * 2012-04-23 2012-08-01 中国科学院物理研究所 一种发光二极管外延材料结构
CN105514235A (zh) * 2015-12-25 2016-04-20 扬州德豪润达光电有限公司 一种用于光电器件的多重量子阱结构

Also Published As

Publication number Publication date
US20220158026A1 (en) 2022-05-19
US11777053B2 (en) 2023-10-03
US20230387345A1 (en) 2023-11-30
CN111834498B (zh) 2022-01-25
US20210234065A1 (en) 2021-07-29
CN111834498A (zh) 2020-10-27
WO2020211346A1 (zh) 2020-10-22
US11257980B2 (en) 2022-02-22

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CB02 Change of applicant information

Country or region after: China

Address after: 361101 No. 101, Xiang Xing Road, Torch Industrial Park (Xiangan) Industrial Zone, Xiamen, Fujian

Applicant after: Purui Optoelectronics (Xiamen) Co.,Ltd.

Address before: 361101 No. 101, Xiang Xing Road, Torch Industrial Park (Xiangan) Industrial Zone, Xiamen, Fujian

Applicant before: KAISTAR LIGHTING (XIAMEN) Co.,Ltd.

Country or region before: China