CN112423465B - 导热基板 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000010949 copper Substances 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 54
- 239000011888 foil Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 230000033116 oxidation-reduction process Effects 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 238000012360 testing method Methods 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 10
- 229910001431 copper ion Inorganic materials 0.000 claims description 10
- 230000005012 migration Effects 0.000 claims description 10
- 238000013508 migration Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 9
- 239000011135 tin Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- 239000003607 modifier Substances 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 206010028980 Neoplasm Diseases 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000032683 aging Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009826 neoplastic cell growth Effects 0.000 description 1
- 230000024121 nodulation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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Abstract
一种导热基板包括金属底板、含铜箔片、导热绝缘层及阻障层。该导热绝缘层设置于该金属底板表面。该阻障层设置于该含铜箔片和导热绝缘层之间,该阻障层与该含铜箔片形成物理接触,且该阻障层与该含铜箔片的界面包括微粗糙面。该阻障层的氧化还原电位在0至‑1V。该微粗糙面的粗糙度Rz为2~18μm。
Description
技术领域
本发明关于一种导热基板,特别是可以防止铜离子迁移而具有良好耐电压特性的导热基板。
背景技术
所谓离子迁移是指电路板上的金属如铜、银等在一定条件下发生离子化并在电场作用下通过绝缘层向另一极迁移而导致绝缘性能下降。由于早期的线路板中线间距比较宽,发生这种故障的几率很小,并且只有在高温潮湿的条件下才有发生的可能,因此这一现象没有引起重视。
产生离子迁移的原因,是当绝缘体两端的金属之间有直流电场时,这两边的金属就成为两个电极,其中作为阳极的一方发生离子化并在电场作用下通过绝缘体向另一边的金属(阴极)迁移。从而使绝缘体处于离子导电状态。显然,这将使绝缘体的绝缘性能下降甚至成为导体而造成短路故障。发生这一现象的条件是在潮湿环境下,绝缘体表面或内部有形成电解质物质的潜在因素,包括绝缘体本身的种类、构成、添加物、纤维性能、树脂性能等。
目前市售的一种散热板(Thermally Conductive Board;TCB)产品为包括金属底材、导热绝缘层和铜箔的层叠板。在产品进行高温高湿偏压测试(High temperature andHigh humidity Biased Test;HHBT)时,铜箔有可能产生铜离子迁移,降低导热绝缘层的绝缘性,连带影响耐电压及抗老化特性。
发明内容
本发明公开一种导热基板,在导热基板的电极箔上(例如含铜箔片)上面加上阻障层,例如镍镀层或其他稳定金属镀层,可抑制、阻挡含铜箔片因高温高湿通电发生铜离子迁移而造成产品电性失效,从而提升HHBT耐电压特性。
根据本发明的一实施例,一种导热基板包括金属底板、含铜箔片、导热绝缘层及阻障层。该导热绝缘层设置于该金属底板表面。该阻障层设置于该含铜箔片和导热绝缘层之间,该阻障层与该含铜箔片形成物理接触,且该阻障层与该含铜箔片的界面包括微粗糙面。该阻障层的氧化还原电位(Redox potential)在0至-1V。该微粗糙面的粗糙度Rz为2~18μm。
一实施例中,该阻障层的氧化还原电位与铜的氧化还原电位的差异在0.5~1.2V。
一实施例中,该阻障层包括金属镀层、瘤状物或其组合。
一实施例中,该瘤状物的厚度为0.5~12μm
一实施例中,该阻障层的厚度为含铜箔片厚度的1%~50%。
一实施例中,该阻障层厚度在0.5~10μm。
一实施例中,该阻障层包括镍、锡、锌、铬、铋、钴金属或其组合。
一实施例中,该微粗糙面的表面粗糙度Rz除以含铜箔片厚度的值在15~50%的范围。
一实施例中,该微粗糙面涂布疏水性改质剂。
一实施例中,该导热基板的剥离强度(peeling strength)大于等于1kg/cm。
一实施例中,该导热基板的交流(AC)耐电压值为该导热绝缘层的AC耐电压值的50%以上。
一实施例中,该导热绝缘层的厚度在50~300μm。
本发明的导热基板针对上述铜离子迁移的问题作改善,除提升抗氧化功能外,也能有效改善目前导热基板产品HHBT测试结果不佳的问题,可使得使用导热基板的电气产品具备更佳的耐电压及抗老化特性。
附图说明
图1显示本发明一实施例的导热基板示意图。
图2至图4显示本发明的导热基板制作阻障层的多个实施例。
附图标记说明:
10 导热基板 14 含铜箔片
11 金属底板 15 微粗糙面
12 导热绝缘层 16 金属镀层
13 阻障层 17 瘤状物
具体实施方式
为让本发明的上述和其他技术内容、特征和优点能更明显易懂,下文特举出相关实施例,并配合说明书附图,作详细说明如下。
图1显示本发明一实施例的导热基板。导热基板10包括金属底板11、导热绝缘层12、阻障层13及含铜箔片14。导热绝缘层12设置于该金属底板11表面。阻障层13设置于该含铜箔片14和导热绝缘层12之间。该阻障层13与该含铜箔片14形成物理接触,该阻障层13与该含铜箔片14的界面包括微粗糙面15。其中该微粗糙面的粗糙度Rz为2~18μm,例如5μm、10μm或15μm,以增加含铜箔片14与该导热绝缘层12的结合强度。
阻障层13是用来防止含铜箔片14产生铜离子迁移。某金属的氧化还原电位越大,越容易氧化。反之,氧化还原电位越小,越容易还原。铜金属解离为铜离子如下式:Cu→Cu++e-,氧化还原电位Eo为0.52V。为了防止铜离子迁移,与含铜箔片14接触的阻障层13选用的材质需要更低的氧化还原电位。本发明的阻障层13的氧化还原电位在0至-1V,可选用镍(Ni)、锡(Sn)、锌(Zn)、铬(Cr)、铋(Bi)、钴(Co)等金属做为其材料。镍的氧化还原电位为-0.250V,锡的氧化还原电位为-0.136V,锌的氧化还原电位为-0.762V。阻障层13同时也提供抗氧化的技术效果。表1显示各种材料的氧化还原电位Eo(V)以及其他材料与铜的电位差值。阻障层可使用的材料的氧化还原电位都介于0至-1V之间,而与铜的氧化还原电位差异在0.5~1.2V。
表1
参照图2,阻障层13的制作可于含铜箔片14表面上直接镀上金属镀层16,如铜层。此时阻障层13仅包括金属镀层16。另一实施例中,在镀上导电层16前,在含铜箔片14表面电解沉积出瘤状或凸凹不平状的阻障金属析出物,形成瘤状物17,即进行所谓的瘤化处理。之后,于含铜箔片14和瘤状物17表面镀上金属镀层16,形成如图3所示的结构。因此,阻障层13为瘤状物17和金属镀层16的组合。此外,阻障层13可为仅包括瘤状物17而不包括金属镀层的结构,如图4中“13’”所示。
表2显示本发明的导热基板的实施例E1~E4和比较例C1和C2的实验条件和高温高湿偏压测试(high temperature high humidity biased testing;HHBT)的结果。HHBT的测试条件为于温度85℃和相对湿度85% R.H.进行1000小时的直流DC耐电压测试,DC电压为300V~3kV。实施例E1~E4和比较例C1和C2的导热绝缘层12的厚度均为100μm,含铜箔片的表面粗糙度Rz都是8μm,实施例E1~E4和比较例C2的导热基板如图1所示,均包含阻障层,但比较例C1没有包含阻障层。实施例E1~E3使用规格为1oz的含铜箔片,其厚度为35μm,而阻障层分别采用锡(Sn)、锌(Zn)和镍(Ni)金属,厚度同样为1μm。实施例E4使用规格为1/2oz的含铜箔片,其厚度为17μm,而阻障层采用镍金属,厚度则增加至8μm。比较例C1和C2使用规格为1oz的含铜箔片,其厚度为35μm,C1没有阻障层,C2的阻障层采用镍,厚度为0.1μm。
表2
由表2可知,阻障层选用镍、锡或锌,且阻障层的厚度为1~8μm的实施例E1~E4,可通过DC 300V、DC 500V、DC 1kV的HHBT耐电压测试。阻障层厚度为1μm的E1~E3无法通过DC1.5kV的HHBT耐电压测试,但阻障层厚度为8μm的E4可通过DC 2kV的HHBT耐电压测试。C1没有阻障层和C2的阻障层厚度只有0.1μm都无法通过500V的HHBT测试。显然较厚的阻障层有较佳的耐电压特性。阻障层厚度在0.5~10μm的范围,例如2、4或6μm,可有效防止铜离子迁移。此外阻障层和含铜箔片的厚度通常会一并考虑,该阻障层的厚度为含铜箔片厚度的1%~50%,亦即阻障层厚度/含铜箔片厚度的比值在1~50%。
表3显示本发明的导热基板的实施例E5~E10和比较例C3和C4的实验条件和交流电(AC)耐电压、剥离强度及HHBT等测试结果。HHBT的测试条件为于温度85℃和相对湿度85% R.H.进行1000小时的直流DC耐电压测试。实施例E5~E10和比较例C3和C4的导热绝缘层的厚度均为100μm。实施例E6、E7、E8、E10、C3和C4使用规格为1oz的含铜箔,其厚度为35μm。E5和E9使用规格为1/2oz的含铜箔,其厚度为17μm。E5~E7、E10和C3和C4的阻障层采用镍金属,厚度为2μm。E8和E9瘤化形成阻障层,阻障层中不包括金属镀层,瘤状物厚度为1~8.3μm。E10的阻障层包括1.5μm厚的瘤状物及2μm厚的镍金属镀层,因此其阻障层的厚度为3.5μm。比较例C3的含铜箔片的粗糙度Rz为0.2μm,C4的含铜箔片的粗糙度Rz为20μm,用来分别测试很小和很大的粗糙度Rz对于剥离强度和耐电压的影响。
表3
从表3可知,E5~E10的剥离强度都大于等于1kg/cm,且大于等于1.2kg/cm,C3的粗糙度Rz过小,其剥离强度仅有0.4kg/cm,低于IPC规范的0.8kg/cm。单纯导热绝缘层进行AC耐电压值为6.2kV,E5~E10和C3、C4的AC耐电压值相对于6.2kV的耐压比值列于表3中。E5~E10的耐电压都大于AC 3kV,耐压比值都大于50%。然而,比较例C4的耐电压值为AC 2.4kV,耐压比值只有于38%,显见过大的Rz会导致耐电压性不佳。优选地,本发明导热基板的含铜箔片的表面粗糙度Rz为2~18μm,例如5、10或15μm。Rz除以含铜箔片厚度的值在15~50%的范围,该值太高不利于AC耐电压特性,该值太低则不利于剥离强度。E8~E10通过瘤化制程制作表面有瘤状物的阻障层,其中E8和E9直接以瘤状物作为阻障层,瘤状物厚度分别为1μm和8.3μm。E8可通过HHBT DC 1kV测试(未显示于表3),但无法通过HHBT DC 1.5kV测试。瘤化厚度较厚的E9可通过HHBT 2kV测试。一实施例中,瘤状物的厚度为0.5~12μm。E10则于瘤状物表面另披覆2μm的镍金属镀层。经瘤化的阻障层,其厚度应将瘤状物厚度并入计算,亦即,阻障层厚度=金属镀层厚度+瘤状物厚度。优选地,阻障层中的(金属镀层厚度加瘤化的总厚度)/含铜箔片厚度的值为1~50%。此外,实施例E10于含铜箔片上涂布疏水性改质剂,可为包括烷基、氟素等,如烷基硅烷,可通过DC 3kV的HHBT测试。相对地,其他实施例E5~E9仅能通过DC 1.5kV或DC 2kV的HHBT测试。可见涂布疏水性改质剂可阻挡水气侵入,从而提升对HHBT的耐电压特性。
导热绝缘层的厚度与耐电压大小成正向相关,通常越厚的导热绝缘层可承受越大的电压。举例而言,本发明的导热基板中的导热绝缘层的厚度为50μm时约可承受DC 100V的电压,厚度为300μm时约可承受DC 600V的电压。优选地,导热绝缘层的厚度一般在50~300μm的范围,例如100μm或200μm。
本发明的导热基板通过于含铜箔片和导热绝缘层间的阻障层的设计,可有效阻挡含铜箔片中铜离子迁移,改善目前导热基板产品HHBT特性不佳的问题,可通过DC 1kV或更大电压的HHBT测试,使得导热基板具备更佳的耐电压及抗老化特性。
本发明的技术内容及技术特点已公开如上,然而本领域具有通常知识的技术人士仍可能基于本发明的启示及公开而作种种不背离本发明精神的替换及修饰。因此,本发明的保护范围应不限于实施例所公开者,而应包括各种不背离本发明的替换及修饰,并为以下的权利要求所涵盖。
Claims (10)
1.一种导热基板,包括:
金属底板;
含铜箔片;
导热绝缘层,设置于该金属底板的表面;以及
阻障层,包括金属镀层和瘤状物,设置于该含铜箔片和导热绝缘层之间,用以抑制、阻挡该含铜箔片因高温高湿通电发生铜离子迁移,从而提升该导热基板的高温高湿偏压测试耐电压特性,其中该阻障层与该含铜箔片形成物理接触,该阻障层与该含铜箔片的界面包括微粗糙面,该微粗糙面涂布疏水性改质剂;
其中该阻障层的氧化还原电位在0至-1V;
其中该微粗糙面的表面粗糙度Rz为2~18μm。
2.根据权利要求1所述的导热基板,其中该阻障层的氧化还原电位与铜的氧化还原电位的差异在0.5~1.2V。
3.根据权利要求1所述的导热基板,其中该瘤状物的厚度为0.5~12μm。
4.根据权利要求1所述的导热基板,其中该阻障层的厚度为含铜箔片厚度的1%~50%。
5.根据权利要求1所述的导热基板,其中该阻障层的厚度在0.5~10μm。
6.根据权利要求1所述的导热基板,其中该阻障层包括镍、锡、锌、铬、铋、钴金属或其组合。
7.根据权利要求1所述的导热基板,其中该微粗糙面的表面粗糙度Rz除以含铜箔片厚度的值在15~50%的范围。
8.根据权利要求1所述的导热基板,其中该导热基板的剥离强度大于等于1kg/cm。
9.根据权利要求1所述的导热基板,其中该导热基板的AC耐电压值为该导热绝缘层的AC耐电压值的50%以上。
10.根据权利要求1所述的导热基板,其中该导热绝缘层的厚度在50~300μm。
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