CN112410750A - 石墨烯薄膜复铜基热沉及其制备方法 - Google Patents
石墨烯薄膜复铜基热沉及其制备方法 Download PDFInfo
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Abstract
本发明公开了石墨烯薄膜复铜基热沉及其制备方法。该制备方法包括:提供热沉基板并对所述热沉基板进行预处理;在所述热沉基板上形成石墨烯薄膜层;在所述石墨烯薄膜层上形成金属膜层;对所述石墨烯薄膜层和所述金属膜层进行热压处理。该石墨烯薄膜复铜基热沉包括:热沉基板;石墨烯薄膜层,设置于所述热沉基板上;金属膜层,设置于所述石墨烯薄膜层上。通过制作石墨烯薄膜层来增强了热沉材料的平面导热能力,且石墨烯薄膜层有利于抑制芯片的热膨胀性,延长了芯片的使用寿命,同时通过设置金属膜层可提高热沉材料的焊接性能,最后通过热压工艺可提高石墨烯薄膜层与热沉基板的结合力。
Description
技术领域
本发明属于电子器件封装用热沉技术领域,特别涉及一种石墨烯薄膜复铜基热沉及其制备方法。
背景技术
在大功率电子器件中,产品体积日益变小导致功率密度更高,为防止产品温度过高对电子器件造成损伤导致失效,对封装材料的散热能力要求越来越高。目前大功率电子器件的封装外壳通常采用热沉材料,主要为钨铜合金、钼铜合金、可伐合金等高热导热沉材料,但是,单纯的传统热沉材料已经难以满足高效散热的要求,因此需要开发新的热沉材料来满足需求。
石墨烯是一种由碳原子以SP2键形成的六方晶体结构的二维单原子层,因其独特的结构及优良的物理性能,未来在高性能封装热沉领域有很好的应用前景。近年来有些业界研究者发展了在铜、镍等金属上采用化学气相沉积法(CVD)合成石墨烯的技术,可以生长出大面积高质量的薄层石墨烯。但是由于石墨烯薄膜与基体结合力差,与芯片焊接新差等问题一直没有被大规模运用。
发明内容
(一)本发明所要解决的技术问题
本发明要解决的技术问题是:如何提高热沉材料中的石墨烯薄膜的结合力。
(二)本发明所采用的技术方案
为了实现上述的目的,本发明采用了如下的技术方案:
一种石墨烯薄膜复铜基热沉的制备方法,所述制备方法包括:
提供热沉基板并对所述热沉基板进行预处理;
在所述热沉基板上形成石墨烯薄膜层;
在所述石墨烯薄膜层上形成金属膜层;
对所述石墨烯薄膜层和所述金属膜层进行热压处理。
优选地,对所述热沉基板进行预处理的具体方法包括:
对所述热沉基板进行抛光处理;
对抛光处理后的所述热沉基板进行退火处理。
优选地,退火处理的退火气氛为氢气,退化温度为200℃至500℃,退火时间为1小时至6小时。
优选地,采用化学气相沉积工艺在所述热沉基板上形成石墨烯薄膜层。
优选地,采用物理气相沉积工艺在所述石墨烯薄膜层上形成金属膜层。
优选地,采用放电等离子热压工艺对所述石墨烯薄膜层和所述金属膜层进行热压处理。
优选地,所述热沉基板的铜基热沉基板。
优选地,所述金属膜层的材料为铜。
本发明还公开了一种石墨烯薄膜复铜基热沉,包括:
热沉基板;
石墨烯薄膜层,设置于所述热沉基板上;
金属膜层,设置于所述石墨烯薄膜层上。
优选地,所述热沉基板的厚度范围为0.1mm~3mm;所述石墨烯薄膜层的厚度范围为0.05μm~2μm;所述金属膜层的厚度范围为0.5μm~10μm。
(三)有益效果
本发明公开的石墨烯薄膜复铜基热沉及其制备方法,通过制作石墨烯薄膜层来增强了热沉材料的平面导热能力,且石墨烯薄膜层有利于抑制芯片的热膨胀性,延长了芯片的使用寿命,同时通过设置金属膜层可提高热沉材料的焊接性能,最后通过热压工艺可提高石墨烯薄膜层与热沉基板的结合力。
附图说明
图1是本发明的实施例的石墨烯薄膜复铜基热沉制备方法的流程图;
图2是本发明的实施例的石墨烯薄膜复铜基热沉的剖面示意图;
图3是本发明的实施例的石墨烯薄膜层表面的扫描电镜图;
图4是本发明的实施例的石墨烯薄膜复铜基热沉侧面的扫描电镜图;
图5是本发明的实施例的石墨烯薄膜复铜基热沉的测温点分布示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
实施例一
本发明的目的是在于提供一种石墨烯薄膜复铜基热沉的制备方法,在提高铜基材热沉法兰的散热能力的同时,调节热膨胀系数,从而生产出新型高性能热沉材料。如图1和图2所示,本发明实施例一的石墨烯薄膜复铜基热沉的制备方法包括如下步骤:
步骤S10:提供热沉基板10并对所述热沉基板10进行预处理。
具体来说,热沉基板10优选采用铜基热沉基板,对热沉基板10进行预处理的步骤包括对所述热沉基板10进行抛光处理以及对抛光处理后的所述热沉基板10进行退火处理。
首先对热沉基板10进行物理抛光或化学抛光,接着对热沉基板10进行清洗干燥,然后将热沉基板10置于氢气气氛中进行退火,退化温度为200℃至500℃,退火时间为1小时至6小时。作为优选实施例,热沉基板10的尺寸为20mm×20mm×1mm,退火温度可为400℃,退火时间可为2小时。热沉基板10经过抛光处理及退火处理能提高结合力。热沉基板10的厚度范围为0.1mm~3mm
步骤S20:在所述热沉基板10上形成石墨烯薄膜层20。
具体地,采用化学气相沉积工艺制作石墨烯薄膜层20。其中,碳源选用气态碳源,包括甲烷、乙炔、乙烯、乙烷、一氧化碳、二氧化碳中的任意一种或两种以上的组合,气态碳源占封闭静态体系中通入的气体总量的0.01%~1%,控制真空室内的真空度为1.0×10-6~1.0×10-1Pa,设定压强为1~105Pa,将体系温度升温至800℃~960℃,进行高温催化分解反应,从而在热沉基板10上形成石墨烯薄膜层20。其中,石墨烯薄膜层20的厚度范围为0.05μm~2μm,在高温催化分解反应结束之后,将体系降至室温。采用化学气相沉积能制备出高性能石墨烯薄膜层,并且在封闭体系中制备石墨烯薄膜层20,体系内保持常压,不会对生长室造成污染,而且降低对真空设备的损耗。
作为优选实施例,碳源选用甲烷,甲烷占封闭静态体系中通入的气体总量的0.05%;设定压强为102Pa。再将体系升温至900℃,进行高温催化分解反应,从而在热沉基板10的表面生长形成石墨烯薄膜层20。在高温催化分解反应结束后,将体系降至室温。制作的石墨烯薄膜层20扫描电镜图如图3所示,制备的石墨烯薄膜厚度均匀,且图中未看到裂纹,证明本实施例制备的石墨烯是连续的,说明石墨烯薄膜的质量良好,能确保发挥出其优良的热导性能。
步骤S30:在所述石墨烯薄膜层20上形成金属膜层30。
具体地,采用物理气相沉积工艺制作金属膜层30。沉积过程中,控制沉积功率为500W~900W,工作气氛为氩气,真空室加热温度为150℃~350℃,沉积时间为20min~200min。作为优选实施例,金属膜层30的材料优选为铜,控制沉积功率为750W,工作气氛为氩气,真空室加热温度为220℃,沉积时间为120min,得到金属膜层30。采用的物理气相沉积工艺制备出的金属膜层30,能有效提高芯片焊接性能。其中金属膜层的厚度范围为0.5μm~10μm
步骤S40:对所述石墨烯薄膜层20和所述金属膜层30进行热压处理。
具体地,优选采用放电等离子热压工艺对石墨烯薄膜层20和所述金属膜层30进行热压处理。热压处理过程中,控制热压压力为30~120Mpa,热压温度800℃~1000℃,热压时间20min~40min,最终形成石墨烯薄膜复铜基热沉。作为优选实施例,控制热压压力为90Mpa,热压温度为950℃,热压时间20min~40min,最终形成石墨烯薄膜复铜基热沉。通过放电等离子热压工艺,能显著提高结合力。最终形成的石墨烯薄膜复铜基热沉的扫描电镜图如图5所示,其中标号c表示热沉基板,标号b表示石墨烯薄膜层,标号a表示金属膜层。
针对上述制备方法制作的石墨烯薄膜复铜基热沉,分别进行了热点测温及极限热循环测试。其中热点测温测试结果是石墨烯薄膜复铜基热沉整体的热导率为490W/m·K,而纯铜的热导率397W/m·k。测试结果如下表所示。
具体来说,如图5所示,对石墨烯薄膜复铜基热沉的中心位置1处加热至120℃,在第一半径的位置上测量四个位置2的平均温度为118.45℃,在第二半径的位置上测量四个位置3的平均温度为117.65℃。作为对比例,采用同样尺寸的纯铜基材,在纯铜基材中心位置1处加热至120℃,在第一半径的位置上测量四个位置2的平均温度为116.25℃,在第二半径的位置上测量四个位置3的平均温度为112.17℃。可见,实验结果表明石墨烯薄膜层的存在大大增强了热沉材料在平面上的热导能力,能将芯片产生的热量快速传导至热沉材料各处,从而实现快速散热。
石墨烯抑制热沉基板和芯片热膨胀的具体原理如下:石墨烯在二维平面的导热能力十分突出,能将中心热源产生的热量迅速传递到热沉各处,从而降低了热集中,增大了散热面积。同时石墨烯具有低的热膨胀系数,只有4.8×10-6K-1,其中铜为17.5×10-6K-1,远远小于铜,更接近芯片材料的热膨胀系数,能与芯片有更好的热匹配。石墨烯薄膜复合于铜热沉中,在提高整体热沉材料的热导率的同时,能大大约束铜热沉的热膨胀,从而在热循环中表现出热稳定性。
极限热循环测试为将芯片分别焊接在不同热沉材料表面,在室温至300℃之间反复升温降温,直到芯片破坏。其中纯铜基材的循环次数为2次,石墨烯薄膜复铜基热沉的循环次数为17。结果显示有石墨烯薄膜的热沉材料其热循环次数大大提高,表明石墨烯薄膜能大大降低热沉材料的热应力集中,从而提高热沉材料的应用性能。
实施例二
如图2所示,本发明的实施例二还公开了一种石墨烯薄膜复铜基热沉,包括热沉基板10、设置于热沉基板10上的石墨烯薄膜层20以及设置在金属膜层30上的金属膜层40。其中热沉基板10优选采用铜基热沉基板,金属膜层30的材料优选为铜。所述热沉基板10的厚度范围为0.1mm~3mm,所述石墨烯薄膜层的厚度范围为0.05μm~2μm,所述金属膜层的厚度范围为0.5μm~10μm。
本实施例二的石墨烯薄膜复铜基热沉通过设置石墨烯薄膜层20增强了热沉材料的平面导热能力,且石墨烯薄膜层20有利于抑制芯片的热膨胀性,延长了芯片的使用寿命,同时通过设置金属膜层30可提高热沉材料的焊接性能。
尽管上面对本发明说明性的具体实施方式进行了描述,以便于本技术领域的技术人员能够理解本发明,但是本发明不仅限于具体实施方式的范围,对本技术领域的普通技术人员而言,只要各种变化只要在所附的权利要求限定和确定的本发明精神和范围内,一切利用本发明构思的发明创造均在保护之列。
Claims (10)
1.一种石墨烯薄膜复铜基热沉的制备方法,其特征在于,所述制备方法包括:
提供热沉基板并对所述热沉基板进行预处理;
在所述热沉基板上形成石墨烯薄膜层;
在所述石墨烯薄膜层上形成金属膜层;
对所述石墨烯薄膜层和所述金属膜层进行热压处理。
2.根据权利要求1所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,对所述热沉基板进行预处理的具体方法包括:
对所述热沉基板进行抛光处理;
对抛光处理后的所述热沉基板进行退火处理。
3.根据权利要求2所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,
退火处理的退火气氛为氢气,退化温度为200℃至500℃,退火时间为1小时至6小时。
4.根据权利要求1所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,采用化学气相沉积工艺在所述热沉基板上形成石墨烯薄膜层。
5.根据权利要求1所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,采用物理气相沉积工艺在所述石墨烯薄膜层上形成金属膜层。
6.根据权利要求1所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,采用放电等离子热压工艺对所述石墨烯薄膜层和所述金属膜层进行热压处理。
7.根据权利要求1所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,所述热沉基板的铜基热沉基板。
8.根据权利要求1所述的石墨烯薄膜复铜基热沉的制备方法,其特征在于,所述金属膜层的材料为铜。
9.一种石墨烯薄膜复铜基热沉,其特征在于,包括:
热沉基板;
石墨烯薄膜层,设置于所述热沉基板上;
金属膜层,设置于所述石墨烯薄膜层上。
10.根据权利要求9所述的石墨烯薄膜复铜基热沉,其特征在于,所述热沉基板的厚度范围为0.1mm~3mm;所述石墨烯薄膜层的厚度范围为0.05μm~2μm;所述金属膜层0.5μm~10μm。
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