CN112398310B - Power tube structure and power converter - Google Patents
Power tube structure and power converter Download PDFInfo
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- CN112398310B CN112398310B CN202011240000.0A CN202011240000A CN112398310B CN 112398310 B CN112398310 B CN 112398310B CN 202011240000 A CN202011240000 A CN 202011240000A CN 112398310 B CN112398310 B CN 112398310B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The application provides a power tube structure and power converter, this power converter includes: at least one transistor. In the power tube structure, each transistor is packaged by 4-PIN, and the packaging PINs of each transistor comprise: a signal source pin, a power source pin, a drain pin, and a gate pin; the source electrode pin of the transistor is divided into a power source electrode pin and a signal source electrode pin, so that the transistor realizes the connection between the source electrode of the transistor and the circuit board and the corresponding power bus bar respectively through the power source electrode pin and the signal source electrode pin of the transistor; because the connecting points on the pins of the transistor only need to be welded once, the influence of welding deformation on the position relation between each pin and the corresponding welding hole can be reduced, namely the influence of welding deformation on the installation connection among the transistor, the power busbar and the circuit board is reduced, and therefore the installation connection precision among the transistor, the power busbar and the circuit board can be improved.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a power tube structure and a power converter.
Background
In the structure of the multi-tube parallel inverter based on discrete devices, as shown in fig. 1, a source pin 102 of a transistor 100 is cut short and soldered on a power bus bar 110, and then soldered on a circuit board through a tab 101 on the power bus bar 110.
However, in practical applications, it is found that when the soldering between the source pin 102 of the transistor and the tab 101 on the power bus bar 110 is completed, the tab 101 on the power bus bar 110 is easily deformed, which may cause the tab 101 and the corresponding soldering hole on the circuit board 103 to be misaligned, and if the distance between the two is large, the mounting connection cannot be completed.
Disclosure of Invention
In view of this, the present invention provides a power tube structure and a power converter, so as to improve the mounting and connection accuracy between a transistor, a power bus bar and a circuit board.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions:
one aspect of the present application provides a power tube structure, including: at least one transistor; the package pin of the transistor comprises: a signal source pin, a power source pin, a drain pin, and a gate pin; wherein:
the signal source electrode pin and the gate electrode pin are respectively connected with a circuit board which controls the action of the power tube structure;
the power source electrode pin is connected with a first power bus bar;
the drain electrode pin is connected with the second power busbar;
the first power busbar and the second power busbar are respectively corresponding busbars in equipment where the power tube structure is located.
Optionally, the transistor is packaged by 4-PIN.
Optionally, the drain pin is further connected to the circuit board through the second power bus bar.
Optionally, the number of the transistors is greater than 1, and each transistor is connected in parallel through the first power bus and the second power bus.
Optionally, the transistors and the corresponding power bus bar and the circuit board are connected by welding.
Optionally, the transistor is a MOS transistor.
Another aspect of the present application provides a power converter, comprising: the power circuit comprises a circuit board, at least one first power bus bar, at least one second power bus bar and at least one power tube structure according to any one of the previous aspects of the application;
each power tube structure is connected with the circuit board and is respectively connected with the corresponding first power busbar and the corresponding second power busbar.
Optionally, a first fin is arranged on the second power busbar;
the second power busbar is connected with the circuit board through the first fin so as to realize overcurrent protection of the power tube structure.
Optionally, the first power busbar is provided with at least one second fin;
in the power tube structure corresponding to the first power bus bar, a power source pin of each transistor is connected with the first power bus bar through one corresponding second fin;
at least one third fin is arranged on the second power busbar;
in the power tube structure corresponding to the second power bus bar, a drain pin of each transistor is connected with the second power bus bar through a corresponding third fin.
Optionally, the circuit board, the first power busbar and the second power busbar, and the parts of the circuit board, the first power busbar and the second power busbar, which are respectively connected with the corresponding pins, are respectively arranged above the power tube structure in parallel and in layers at corresponding intervals.
Optionally, in the circuit board, the first power busbar and the second power busbar which are arranged in a layered manner, the corresponding pin of each transistor in the power tube structure:
directly connecting with the corresponding layer closest to the self; alternatively, the first and second electrodes may be,
the non-contact penetrates through at least one layer closer to the layer and is connected with the layer corresponding to the layer.
Optionally, the power tube structure is arranged above the power tube structure from near to far: the first power busbar, the second power busbar and the circuit board.
Optionally, the method further includes: and the insulating medium is arranged between the first power busbar and the adjacent second power busbar.
Optionally, the method further includes: the insulating medium is arranged on one side of the first power bus bar, which is far away from the adjacent second power bus bar;
and/or the presence of a gas in the gas,
and the insulating medium is arranged on one side of the second power busbar far away from the adjacent first power busbar.
Optionally, the number of the power tube structures is 6;
and 6 power tubes are connected into a three-phase full-bridge conversion topology.
Optionally, the busbar in the power converter includes: the direct current positive busbar, the direct current negative busbar and the three-phase alternating current busbar.
Optionally, in the three-phase full-bridge conversion topology, the 3 power tube structures located in the upper bridge arm, and second power busbars connected to the power tube structures are the dc positive busbar;
the three-phase full-bridge conversion topology comprises 3 power tube structures positioned on a lower bridge arm, and first power busbars connected with the power tube structures are all the direct-current negative busbar;
in the same phase of the three-phase full-bridge conversion topology, a first power bus bar connected with the power tube structure of the upper bridge arm and a second power bus bar connected with the power tube structure of the lower bridge arm are corresponding alternating current bus bars.
As can be seen from the above technical solutions, the present invention provides a power tube structure, including: at least one transistor. In the power tube structure, each transistor is packaged by 4-PIN, and the packaging PINs of each transistor comprise: a signal source pin, a power source pin, a drain pin, and a gate pin; the source electrode pin of the transistor is divided into a power source electrode pin and a signal source electrode pin, so that the transistor realizes the connection between the source electrode of the transistor and the circuit board and the corresponding power bus bar respectively through the power source electrode pin and the signal source electrode pin of the transistor; in addition, because the connection points on the pins of the transistor only need to be welded once, the influence of welding deformation on the position relation between each pin and the corresponding welding hole can be reduced, namely the influence of welding deformation on the installation connection among the transistor, the power busbar and the circuit board is reduced, and therefore the installation connection precision among the transistor, the power busbar and the circuit board can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a power tube structure in the prior art;
fig. 2 is a schematic structural diagram of a power tube structure according to an embodiment of the present application;
fig. 3 and 4 are schematic diagrams of three-dimensional structures of power converters provided by embodiments of the present application;
fig. 5a and 5b are schematic circuit diagrams of a three-phase full-bridge rectification topology and a three-phase full-bridge inversion topology, respectively.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In this application, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
In order to improve the mounting accuracy between the transistors, the power bus bar, and the circuit board, an embodiment of the present application provides a power tube structure, which has a specific structure shown in fig. 2 and dotted frames in fig. 3 and fig. 4 (shown by taking an example that one power tube structure is formed by 6 transistors 01-a, 01-B, 01-C, 01-D, 01-E, and 01-F), and includes: at least one transistor, as shown in FIG. 2 as 01-A, 01-B, 01-C … -N.
In the power tube structure, the package pins of each transistor specifically include: signal source lead 07, power source lead 08, drain lead 09, and gate lead 06. In practical application, each transistor can be packaged by 4-PIN to realize the four packaging PINs; of course, a package manner including more pins may also be adopted, as long as at least four package pins can be implemented, which are all within the protection scope of the present application.
The signal source electrode pin 07 and the gate electrode pin 06 are respectively connected with the circuit board 05, but are not connected with any power bus bar; the power source pin 08 is connected with the first power bus 02, the drain pin 09 is connected with the second power bus 03, and the two are connected with different circuit boards 05.
Specifically, as shown in fig. 2, at least one second tab 02A is disposed on the first power bus bar 02, and the power source pin 08 of each transistor is connected to the first power bus bar 02 through a corresponding second tab 02A on the first power bus bar 02.
Similarly, as shown in fig. 2, at least one third fin 03A is disposed on the second power bus bar 03, and the drain pin 09 of each transistor is connected to the second power bus bar 03 through a corresponding third fin 03A on the second power bus bar 03.
It should be noted that the second fin 02A and the third fin 03A are respectively disposed on the first power busbar 02 and the second power busbar 03, which can effectively reduce the process requirement on welding and improve the welding firmness.
Because the power tube structure generally needs to be applied to devices such as a power converter to realize corresponding functions, the first power busbar 02 and the second power busbar 03 are respectively corresponding busbars in the device such as the power converter where the power tube structure is located, and the circuit board 05 is a circuit board 05 in the device such as the power converter where the power tube structure is located.
Specifically, the first power bus-bar 02 and the second power bus-bar 03 are respectively connected with a power source pin 08 and a drain pin 09, so that a power transmission function can be realized; and the circuit board 05 is provided with a control circuit, so that the action of the power tube structure can be controlled.
It should be noted that, each pin of the transistor may be connected by soldering, that is, the connection between the transistor and the corresponding power bus bar and the circuit board 05 is soldering, but in practical applications, the connection between the transistor and the corresponding power bus bar and the circuit board 05 may also be connected by other connection methods, and as long as the effect achieved by the connection method is the same as that achieved by soldering, the connection method is within the protection scope of the embodiment of the present application, and the present application is not limited specifically here and is within the protection scope of the present application.
As can be seen from the above description, for each transistor in the power tube structure, the purpose that its own source is connected to the circuit board and the corresponding power bus bar respectively can be achieved by its own signal source and power source; moreover, only one welding is needed at the connecting point of each pin in each transistor, so that the influence of welding deformation on the position relation between each pin and the corresponding welding hole can be reduced, namely the influence of welding deformation on the installation connection among the transistors, the power bus bar and the circuit board is reduced, and the installation connection precision among the transistors, the power bus bar and the circuit board can be improved; in addition, in the embodiment, the transistors, the power busbar and the circuit board are connected pairwise, namely, the transistors, the power busbar and the circuit board are not connected simultaneously, so that the difficulty of production control is reduced.
In practical application, the drain pin 09 of the transistor may be further connected to the circuit board 05 through the second power bus 03, so as to achieve the purpose of performing overcurrent protection on the transistor. Specifically, as shown in fig. 2, a first fin 04 is disposed on the second power bus bar 03 corresponding to the power tube structure 10, and the connection between the second power bus bar 03 and the circuit board 05 is realized through the first fin 04, that is, the connection between the drain pin 09 of each transistor and the circuit board 05 is realized through the second power bus bar 03, so that the overcurrent protection of the power tube structure 10 can be realized.
In addition, a corresponding insulating medium, such as insulating paper or a plastic film, should be arranged between the first power bus 02 and the second power bus 03 to meet the insulating requirement between the two; the other sides of the first power bus 02 and the second power bus 03, which are far away from each other, can also be provided with corresponding insulating media; without limitation, and depending on the specific application, are within the scope of the present application.
In addition, when the number of the transistors is larger than 1, the parallel connection of the transistors can be realized through the connection relationship of the pins of the transistors.
Optionally, the transistor may be a MOS transistor, specifically, an NMOS transistor, or a PMOS transistor; of course, the transistor may also be an IGBT, which is not specifically limited herein and may be selected according to specific situations, all of which are within the protection scope of the present application.
Note, however, that if the transistor is an IGBT, the power source pin 08, the signal source pin 07, and the drain pin 09 in the above description need to be replaced with: a power emitter pin, a signal emitter pin, and a collector pin.
As can be seen from the above description, the power tube structure needs to be applied to a specific device such as a power converter to achieve the corresponding function, so that another embodiment of the present application provides a power converter, the specific structure of which can be shown in fig. 3 and 4 (in the figures, 6 transistors 01-a, 01-B, 01-C, 01-D, 01-E, and 01-F constitute one power tube structure 10, and 6 power tube structures 10 are connected to form a three-phase full-bridge conversion topology for example), including: the power bus structure comprises a circuit board 05, at least one first power bus bar 02, at least one second power bus bar 03 and at least one power tube structure 10.
The number of the first power bus 02, the second power bus 03 and the power tube structures 10 may be selected according to actual situations, and is not specifically limited herein and is within the protection scope of the present application.
In the power converter, the connection relationship between each power tube structure 10 and the circuit board 05 and the corresponding power bus bar is described in detail in the above embodiments, and details are not repeated here, and refer to the above embodiments.
It should be noted that, because the mounting and connecting precision among the transistor, the power bus bar and the circuit board is improved, the yield of the power converter provided by the embodiment is also effectively improved; in addition, if a more reliable welding technique such as laser welding can be used during the installation process, the power converter is more advantageous and beneficial to mass production.
The circuit board 05, the first power busbar 02 and the second power busbar 03 can be flat, bent or in other shapes according to specific application environments, and are all within the protection range of the application. Preferably, for each power tube structure 10, the portions of the circuit board 05, the first power bus bar 02 and the second power bus bar 03 corresponding thereto, which are respectively connected to the corresponding pins, are respectively arranged above the power tube structure 10 in parallel and in layers at corresponding intervals. The distance between the layers can be set according to actual needs, and is not specifically limited herein and is within the scope of the present application.
In practical applications, in the circuit board 05, the first power busbar 02 and the second power busbar 03 arranged in layers, the circuit board 05 may be farther from the power tube structure 10 than the first power busbar 02 and the second power busbar 03, or the circuit board 05 may be closer to the power tube structure 10 than the first power busbar 02 and the second power busbar 03, or the circuit board 05 may be disposed between the first power busbar 02 and the second power busbar 03, or even in the above three embodiments, the first power busbar 02 may be closer to the power tube structure 10 than the second power busbar 03, or the first power busbar 02 may be farther from the power tube structure 10 than the second power busbar 03, which is not specifically limited herein, and is determined according to specific situations and is within the protection range of the present application.
Preferably, in the circuit board 05, the first power bus bar 02 and the second power bus bar 03 arranged in layers, the arrangement order of the three from near to far above the power tube structure 10 may be: the power bus comprises a first power bus 02, a second power bus 03 and a circuit board 05.
Correspondingly, in the circuit board 05, the first power bus bar 02 and the second power bus bar 03 arranged in layers, if the layer corresponding to the corresponding pin of each transistor in the power tube structure 10 is the layer closest to itself, the corresponding pin of each transistor in the power tube structure 10 is directly connected to the layer closest to itself, and if the layer corresponding to the corresponding pin of each transistor in the power tube structure 10 is not the layer closest to itself, the corresponding pin of each transistor in the power tube structure 10 may also pass through at least one layer closer to itself without contact, and be connected to the layer corresponding to itself.
Taking fig. 2 as an example, the upper side of the power tube structure 10 from the near side to the far side is: the power bus comprises a first power bus 02, a second power bus 03 and a circuit board 05; a power source pin 08 of a transistor in the power tube structure 10 is directly connected with a first power bus 02; a drain pin 09 of the transistor passes through the first power bus 02 without contact and is connected with the second power bus 03; the signal source pin 07 and the gate pin 06 of the transistor pass through the first power bus 02 and the second power bus 03 without contact and are connected with the circuit board 05.
It should be noted that, in the above arrangement manner, the distance between each pin in the power tube structure 10 and the corresponding power bus bar or the circuit board 05 may be reduced, so that the space occupied by the power converter is reduced, and therefore the manufacturing cost of the power converter is reduced.
As shown in fig. 2 and fig. 3, at least one second fin 02A is further disposed on the first power bus bar 02, and specifically, in the power tube structure 10 corresponding to the first power bus bar 02, the power source pin 08 of each transistor is connected to the first power bus bar 02 through a corresponding second fin 02A on the first power bus bar 02.
Similarly, as shown in fig. 2 and fig. 3, at least one third tab 03A is disposed on the second power bus bar 03, and specifically, in the power tube structure 10 corresponding to the second power bus bar 03, the drain pin 09 of each transistor is connected to the second power bus bar 03 through a corresponding third tab 03A on the second power bus bar 03.
It should be noted that the second fin 02A and the third fin 03A are respectively disposed on the first power busbar 02 and the second power busbar 03, so that the process requirement on welding can be effectively reduced, and the welding firmness can be improved.
As shown in fig. 2, fig. 3 and fig. 4, a first fin 04 is further disposed on the second power bus bar 03 corresponding to the power tube structure 10, and the connection between the second power bus bar 03 and the circuit board 05 is realized through the first fin 04, that is, the connection between the drain pin 09 of each transistor in the power tube structure 10 and the circuit board 05 is realized, so that overcurrent protection for the power tube structure 10 can be realized.
In addition, a corresponding insulating medium, such as insulating paper or a plastic film, should be arranged between the first power bus 02 and the second power bus 03 to meet the insulating requirement between the two; the other sides of the first power bus 02 and the second power bus 03, which are far away from each other, can also be provided with corresponding insulating media; without limitation, and are intended to be within the scope of the present application depending on the particular environment in which it is used.
Taking a three-phase full-bridge conversion topology as an example for explanation, all busbars in the three-phase full-bridge conversion topology are respectively as follows: the power converter comprises a direct-current positive busbar, a direct-current negative busbar and a three-phase alternating-current busbar, wherein the number of power tube structures 10 in the power converter is 6, the 6 power tube structures 10 can be connected into a three-phase full-bridge rectification topology (as shown in fig. 5 a) or a three-phase full-bridge inversion topology (as shown in fig. 5 b), and the specific structure of the power converter is shown in fig. 3 and 4 and specifically comprises the following steps:
3 power tube structures 10 positioned on an upper bridge arm in the three-phase full-bridge conversion topology, wherein second power busbars 03 connected with the power tube structures are direct-current positive busbars; 3 power tube structures 10 positioned on a lower bridge arm in the three-phase full-bridge conversion topology, wherein first power busbars 02 connected with the power tube structures are direct-current negative busbars; in the same phase of the three-phase full-bridge conversion topology, a first power bus bar 02 connected with the power tube structure 10 of the upper bridge arm and a second power bus bar 03 connected with the power tube structure 10 of the lower bridge arm are corresponding alternating current bus bars.
It should be noted that fig. 3-5 b are all shown by taking a three-phase full-bridge conversion topology as an example, and in practical applications, the specific topology of the power converter is not limited thereto, and any topology including at least one power tube structure provided by the above embodiments is within the protection scope of the present application, such as a single-tube, double-tube, four-tube DC/DC topology, a two-level DC/AC topology, and other AC/DC topologies and AC/AC topologies, and details thereof are not repeated herein.
The embodiments of the invention are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments can be referred to each other. The device disclosed in the embodiment corresponds to the method disclosed in the embodiment, so that the description is simple, and the relevant points can be referred to the description of the method part.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner. Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (17)
1. A power tube structure, comprising: at least one transistor; the package pin of the transistor comprises: a signal source pin, a power source pin, a drain pin, and a gate pin; wherein:
the signal source electrode pin and the gate electrode pin are respectively connected with a circuit board which controls the action of the power tube structure;
the power source pin is connected with the first power bus bar through a second fin arranged on the first power bus bar; each transistor can achieve the purpose that the source electrode of each transistor is respectively connected with the circuit board and the corresponding power bus bar through the signal source electrode and the power source electrode of each transistor;
the drain electrode pin is connected with the second power bus bar through a third fin arranged on the second power bus bar; a first fin is arranged on the second power bus bar, and the connection between the second power bus bar and the circuit board is realized through the first fin, so that the overcurrent protection of the power tube structure is realized;
the first power busbar and the second power busbar are respectively corresponding busbars in equipment where the power tube structure is located.
2. The power tube structure of claim 1, wherein the transistor is in a 4-PIN package.
3. The power tube structure of claim 1, wherein the drain pin is further connected to the circuit board through the second power bus bar.
4. The power tube structure as claimed in claim 1, wherein the number of the transistors is greater than 1, and each transistor is connected in parallel through the first power bus bar and the second power bus bar.
5. The power tube structure of claim 1, wherein each of the transistors is connected to the corresponding power bus bar and the circuit board by soldering.
6. The power tube structure as claimed in any one of claims 1-5, wherein the transistor is a MOS transistor.
7. A power converter, comprising: a circuit board, at least one first power bus bar, at least one second power bus bar, and at least one power tube structure according to any one of claims 1-6;
each power tube structure is connected with the circuit board and is respectively connected with the corresponding first power busbar and the corresponding second power busbar.
8. The power converter according to claim 7, wherein the second power bus bar is provided with a first fin;
the second power busbar is connected with the circuit board through the first fin so as to realize overcurrent protection on the power tube structure.
9. The power converter according to claim 7, wherein the first power bus bar is provided with at least one second fin;
in the power tube structure corresponding to the first power bus bar, a power source pin of each transistor is connected with the first power bus bar through one corresponding second fin;
at least one third fin is arranged on the second power busbar;
in the power tube structure corresponding to the second power bus bar, a drain pin of each transistor is connected with the second power bus bar through a corresponding third fin.
10. The power converter according to claim 7, wherein the circuit board, the first power bus bar and the second power bus bar, the portions of the circuit board, the first power bus bar and the second power bus bar, which are connected to the corresponding pins, are arranged above the power tube structure in parallel and in layers at corresponding intervals.
11. The power converter according to claim 10, wherein in the layered circuit board, the first power bus bar and the second power bus bar, the respective pin of each transistor in the power tube structure is:
directly connecting with the corresponding layer closest to the self; alternatively, the first and second electrodes may be,
the non-contact penetrates through at least one layer closer to the layer and is connected with the layer corresponding to the layer.
12. The power converter according to claim 10, wherein the power tube structure comprises, from the proximal side to the distal side:
the first power busbar, the second power busbar and the circuit board.
13. A power converter according to any of claims 7-12, further comprising: and the insulating medium is arranged between the first power busbar and the adjacent second power busbar.
14. The power converter of claim 13, further comprising: the insulating medium is arranged on one side of the first power bus bar, which is far away from the adjacent second power bus bar;
and/or the presence of a gas in the gas,
and the insulating medium is arranged on one side of the second power busbar far away from the adjacent first power busbar.
15. A power converter according to any of claims 7-12, characterized in that the number of said power tube structures is 6;
and 6 power tubes are connected into a three-phase full-bridge conversion topology.
16. The power converter of claim 15, wherein the bus bar in the power converter comprises:
the direct current positive busbar, the direct current negative busbar and the three-phase alternating current busbar.
17. The power converter according to claim 16, wherein 3 power tube structures of the upper bridge arm in the three-phase full-bridge conversion topology, to which the second power bus bars are connected, are the dc positive bus bar;
the three-phase full-bridge conversion topology comprises 3 power tube structures positioned on a lower bridge arm, and first power busbars connected with the power tube structures are all the direct-current negative busbar;
in the same phase of the three-phase full-bridge conversion topology, a first power bus bar connected with the power tube structure and positioned on the upper bridge arm and a second power bus bar connected with the power tube structure and positioned on the lower bridge arm are corresponding alternating current bus bars.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011240000.0A CN112398310B (en) | 2020-11-09 | 2020-11-09 | Power tube structure and power converter |
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| CN202011240000.0A CN112398310B (en) | 2020-11-09 | 2020-11-09 | Power tube structure and power converter |
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| CN112398310B true CN112398310B (en) | 2023-04-07 |
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| CN113346713B (en) * | 2021-04-19 | 2022-11-11 | 中国第一汽车股份有限公司 | Discrete device and power module package |
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