CN112366265A - LED purple light whole surface Al reflection light-emitting device - Google Patents
LED purple light whole surface Al reflection light-emitting device Download PDFInfo
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- CN112366265A CN112366265A CN202011231367.6A CN202011231367A CN112366265A CN 112366265 A CN112366265 A CN 112366265A CN 202011231367 A CN202011231367 A CN 202011231367A CN 112366265 A CN112366265 A CN 112366265A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
The invention discloses a light-emitting device with an LED violet whole surface Al reflection, which comprises a light-emitting epitaxial support substrate, a metal structure, a light-emitting epitaxial structure and a CVD transparent medium layer; the metal structure comprises a conductive layer, a reflecting layer, an ohmic contact layer and a bonding layer; the reflecting layer is an Al reflecting layer and is made into a whole reflecting layer; the light-emitting epitaxial structure sequentially comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer from top to bottom; the CVD transparent medium layer is used as a protective layer of the metal structure and the light-emitting epitaxial structure; and plating a conductive layer on the n-type semiconductor layer, plating an ohmic contact layer on the p-type semiconductor layer, plating an Al reflecting layer on the whole surface under the transparent ohmic contact layer, and bonding the Al reflecting layer and the substrate together through a bonding layer. The invention solves the problems of low reflectivity of Ag in an ultraviolet band, small area of an Ag reflecting layer and the like, improves the luminous flux of the LED semiconductor device to a great extent, and avoids the problem of chip failure caused by Ag migration.
Description
Technical Field
The invention relates to the technical field of light-emitting devices, in particular to a light-emitting device with an LED violet whole surface Al reflection function.
Background
The ultraviolet covering wavelength range is 100 nm-400 nm. The common UVA wavelength range is 400-315 nm; the wavelength range of UVB is 315-280 nm; the UVC wavelength range is 280-100 nm. Ultraviolet light emitting diodes can emit light in the ultraviolet range (from 100-400nm), but actually have very limited luminous efficiency below the wavelength of 365 nm. The luminous efficiency is 5-8% at 365nm wavelength, the wavelength is close to 20% at 395nm wavelength, and the ultraviolet luminous efficiency in longer wavelength band is better. These ultraviolet light emitting diodes are used in ultraviolet curing materials, photocatalytic air purifiers, counterfeit money identification, phototherapy, white light emitting diodes and solar bathers. Meanwhile, UVC has germicidal ultraviolet rays, and can be effectively applied to disinfection and sterilization, water purification and a series of applications in medical treatment. Therefore, the technical development of improving the luminous flux of the ultraviolet light-emitting diode has great influence on the future application field of the ultraviolet light-emitting diode.
In an LED semiconductor device, Ag is often used as a reflecting layer to increase the luminous flux of the semiconductor, and the Ag cannot leak out because the Ag has high metal activity and is easy to migrate, so that the Ag needs to be coated by other metals or CVD. The area of the reflective layer does not exceed the area of the GaN of the chip. In addition, in the ultraviolet band, Ag has high light absorption efficiency, and affects the light output of the light emitting device to a certain extent.
Disclosure of Invention
In view of this, the invention provides an LED violet whole surface Al reflective light emitting device, which aims at the problems of low efficiency of Ag reflectivity in ultraviolet band, small reflective area, and the like.
The invention solves the problems through the following technical means:
a light-emitting device with an LED violet whole surface Al reflection comprises a light-emitting epitaxial support substrate, a metal structure, a light-emitting epitaxial structure and a CVD transparent medium layer;
the luminous epitaxial support substrate is made of materials with good electric conduction and heat conduction performance;
the metal structure comprises a conductive layer, a reflecting layer, an ohmic contact layer and a bonding layer; the reflecting layer is an Al reflecting layer and is made into a whole reflecting layer;
the light-emitting epitaxial structure sequentially comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer from top to bottom;
the CVD transparent medium layer is used as a protective layer of the metal structure and the light-emitting epitaxial structure;
and plating a conductive layer on the n-type semiconductor layer of the light-emitting epitaxial structure, plating an ohmic contact layer below the p-type semiconductor layer, plating an Al reflecting layer on the whole surface below the transparent ohmic contact layer, and bonding the light-emitting epitaxial support substrate and the transparent ohmic contact layer together through a bonding layer.
Further, the light-emitting epitaxial support substrate is a silicon wafer, a copper-tungsten substrate or a molybdenum substrate.
Further, the conducting layer is formed by combining two or more metals of Cr, Pt, Au, Ni and Al.
Furthermore, the ohmic contact layer is formed by Ni/Au, indium tin oxide and doped ZnO to form a low-resistance contact substance layer.
Furthermore, the doped ZnO is doped with Al/In/Ga.
Furthermore, the bonding layer is formed by eutectic of Au, Sn and Ni.
Further, the CVD transparent medium layer is made of SiO2 or SiNx.
Compared with the prior art, the invention has the beneficial effects that at least:
the invention solves the problems of low reflectivity of Ag in an ultraviolet band, small area of an Ag reflecting layer and the like, improves the luminous flux of the LED semiconductor device to a great extent, and avoids the problem of chip failure caused by Ag migration.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a conventional violet semiconductor structure;
FIG. 2 is a schematic structural diagram of an LED violet-burnish Al-reflective light-emitting device according to the present invention;
FIG. 3 is a graph comparing Al-Ag reflectance.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It should be noted that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work based on the embodiments of the present invention belong to the protection scope of the present invention.
The conventional violet semiconductor structure is shown in fig. 1:
1. the reflecting layer adopts Ag as a reflecting metal layer.
2. The Ag metal of the reflecting layer needs to be coated by a bonding layer or other metal layers, and the problem of Ag migration is not solved, so that the reflecting layer cannot realize whole-surface reflection.
As shown in fig. 2, the light emitting device with an LED violet-burnish Al reflection provided by the present invention includes a light emitting epitaxial support substrate, a metal structure, a light emitting epitaxial structure and a CVD transparent dielectric layer.
The light-emitting epitaxial support substrate is made of materials with good electric conduction and heat conduction performance and can be a silicon wafer, a copper-tungsten substrate, a molybdenum substrate and the like;
the metal structure comprises a conductive layer, a reflecting layer, an ohmic contact layer and a bonding layer; the conductive layer can be formed by combining two or more metals of Cr, Pt, Au, Ni and Al, the reflecting layer is an Al layer and is used as a whole-surface reflecting layer, and the ohmic contact layer can be a low-resistance contact substance layer formed by Ni/Au, indium tin oxide, doped ZnO (Al/In/Ga doped) and the like. The bonding layer can be formed by eutectic crystal of Au, Sn and Ni.
The light-emitting epitaxial structure is composed of an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer from top to bottom in sequence.
The CVD transparent dielectric layer can be made of SiO2 or SiNx and can be used as a protective layer of the metal structure and the light-emitting epitaxial structure.
And plating a conductive layer on the N-GaN of the light-emitting epitaxial structure, plating an ohmic contact layer below the P-GaN, plating a whole reflection layer Al below the transparent ohmic contact layer as a reflection metal layer, and bonding the reflection layer Al with the substrate through a metal bonding layer.
As shown in FIG. 3, the reflectivity of Al in the ultraviolet band adopted by the invention is obviously higher than the reflectivity of Ag in the ultraviolet band adopted by the traditional violet semiconductor structure, the problems of low reflectivity of Ag in the ultraviolet band, small area of an Ag reflecting layer and the like are solved, the luminous flux of an LED semiconductor device is improved to a great extent, and the problem of chip failure caused by Ag migration is avoided.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. A light-emitting device with an LED violet whole surface Al reflection is characterized by comprising a light-emitting epitaxial support substrate, a metal structure, a light-emitting epitaxial structure and a CVD transparent medium layer;
the luminous epitaxial support substrate is made of materials with good electric conduction and heat conduction performance;
the metal structure comprises a conductive layer, a reflecting layer, an ohmic contact layer and a bonding layer; the reflecting layer is an Al reflecting layer and is made into a whole reflecting layer;
the light-emitting epitaxial structure sequentially comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer from top to bottom;
the CVD transparent medium layer is used as a protective layer of the metal structure and the light-emitting epitaxial structure;
and plating a conductive layer on the n-type semiconductor layer of the light-emitting epitaxial structure, plating an ohmic contact layer below the p-type semiconductor layer, plating an Al reflecting layer on the whole surface below the transparent ohmic contact layer, and bonding the light-emitting epitaxial support substrate and the transparent ohmic contact layer together through a bonding layer.
2. The LED violet-burnish Al-reflective light emitting device of claim 1, wherein the light emitting epitaxial support substrate is a silicon wafer, a copper-tungsten substrate, or a molybdenum substrate.
3. The LED violet-burnish Al-reflective light emitting device of claim 1, wherein the conductive layer is a combination of two or more metals selected from Cr, Pt, Au, Ni, and Al.
4. The LED violet-burnish Al-reflective light emitting device of claim 1, wherein the ohmic contact layer is a low-resistance contact material layer formed of Ni/Au, indium tin oxide, doped ZnO.
5. The LED violet-burnish Al-reflective light emitting device of claim 4, wherein the doped ZnO is Al/In/Ga doped.
6. The LED violet-burnish Al-reflective light emitting device of claim 1, wherein the bonding layer is eutectic of Au, Sn, and Ni metals.
7. The LED violet-burnish Al-reflective light-emitting device according to claim 1, wherein the CVD transparent dielectric layer is made of SiO2 or SiNx.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011231367.6A CN112366265A (en) | 2020-11-06 | 2020-11-06 | LED purple light whole surface Al reflection light-emitting device |
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| CN202011231367.6A CN112366265A (en) | 2020-11-06 | 2020-11-06 | LED purple light whole surface Al reflection light-emitting device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113903844A (en) * | 2021-08-20 | 2022-01-07 | 华灿光电（浙江）有限公司 | Flip red light diode chip and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130037849A1 (en) * | 2006-12-08 | 2013-02-14 | Samsung Electronics | Vertical structure led device and method of manufacturing the same |
| CN103811624A (en) * | 2014-02-18 | 2014-05-21 | 江苏新广联科技股份有限公司 | Encapsulation-free type UVLED (Ultraviolet Light-Emitting Diode) chip |
| CN206003793U (en) * | 2016-08-24 | 2017-03-08 | 扬州乾照光电有限公司 | A kind of copper base high brightness AlGaInP light emitting diode |
| CN111710767A (en) * | 2020-06-24 | 2020-09-25 | 扬州乾照光电有限公司 | LED chip based on graphical reflector and manufacturing method thereof |
-
2020
- 2020-11-06 CN CN202011231367.6A patent/CN112366265A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130037849A1 (en) * | 2006-12-08 | 2013-02-14 | Samsung Electronics | Vertical structure led device and method of manufacturing the same |
| CN103811624A (en) * | 2014-02-18 | 2014-05-21 | 江苏新广联科技股份有限公司 | Encapsulation-free type UVLED (Ultraviolet Light-Emitting Diode) chip |
| CN206003793U (en) * | 2016-08-24 | 2017-03-08 | 扬州乾照光电有限公司 | A kind of copper base high brightness AlGaInP light emitting diode |
| CN111710767A (en) * | 2020-06-24 | 2020-09-25 | 扬州乾照光电有限公司 | LED chip based on graphical reflector and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113903844A (en) * | 2021-08-20 | 2022-01-07 | 华灿光电（浙江）有限公司 | Flip red light diode chip and preparation method thereof |
| CN113903844B (en) * | 2021-08-20 | 2023-05-09 | 华灿光电（浙江）有限公司 | Flip red diode chip and preparation method thereof |
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