CN112366261A - Light emitting diode epitaxial wafer and preparation method thereof - Google Patents

Light emitting diode epitaxial wafer and preparation method thereof Download PDF

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Publication number
CN112366261A
CN112366261A CN202011024563.6A CN202011024563A CN112366261A CN 112366261 A CN112366261 A CN 112366261A CN 202011024563 A CN202011024563 A CN 202011024563A CN 112366261 A CN112366261 A CN 112366261A
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layer
gan
composite layer
sublayers
emitting diode
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CN112366261B (en
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洪威威
王倩
梅劲
董彬忠
吕蒙普
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HC Semitek Zhejiang Co Ltd
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of light-emitting diode manufacturing. Certain stress can be released during the growth process of the AlGaN sublayers and the first GaN sublayers which are alternately stacked, and dislocation defects which can be accumulated in the first composite layer are less. The buffer layer further includes a second composite layer stacked on the first composite layer, and the second composite layer may have a structure of alternately stacked second GaN sublayers and MgN sublayers, and alternately stacked second GaN sublayers and BN sublayers. The particle sizes of Mg atoms and B atoms in the BN sublayer are small, and defects in crystals and vacancies generated by dislocations can be filled during growth, so that the formation of the dislocations and the defects is reduced, the crystal quality of the buffer layer is improved, and the luminous efficiency of the finally obtained light-emitting diode epitaxial wafer is also improved.

Description

Light emitting diode epitaxial wafer and preparation method thereof
Technical Field
The invention relates to the field of light emitting diode manufacturing, in particular to a light emitting diode epitaxial wafer and a preparation method thereof.
Background
An LED (Light Emitting Diode) is a semiconductor electronic component capable of Emitting Light. As a novel high-efficiency, environment-friendly and green solid-state illumination light source, the solid-state illumination light source is rapidly and widely applied, such as traffic signal lamps, automobile interior and exterior lamps, urban landscape illumination, mobile phone backlight sources and the like, and the aim of improving the luminous efficiency of a chip is continuously pursued by LEDs.
An epitaxial wafer of a light emitting diode generally includes a substrate, and an AlN layer, a GaN buffer layer, an n-type GaN layer, a multi-quantum well layer, and a p-type GaN layer sequentially grown on the substrate. The GaN buffer layer can relieve lattice mismatch between the n-type GaN layer and the substrate to a certain extent so as to improve the crystal quality of the multiple quantum well layer and the p-type GaN layer grown on the n-type GaN layer and the n-type GaN layer.
However, when the GaN buffer layer itself grows on the AlN layer, some dislocation defects are accumulated, and these dislocation defects extend into the structure of the n-type GaN layer or the like, resulting in limited improvement in the crystal quality of the finally obtained n-type GaN layer, multi-quantum well layer, and p-type GaN layer.
Disclosure of Invention
The embodiment of the invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, which can improve the crystal quality of an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer which are finally obtained so as to improve the light-emitting efficiency of a light-emitting diode. The technical scheme is as follows:
the embodiment of the invention provides a light-emitting diode epitaxial wafer, which comprises a substrate, and an AlN layer, a buffer layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer which are sequentially laminated on the substrate,
the buffer layer comprises a first composite layer and a second composite layer which are sequentially stacked on the substrate, the first composite layer comprises AlGaN sublayers and first GaN sublayers which are alternately stacked, the second composite layer comprises second GaN sublayers and MgN sublayers which are alternately stacked, and the second composite layer comprises the second GaN sublayers and the BN sublayers which are alternately stacked.
Optionally, the thickness of the AlGaN sublayer is 2 to 15nm, and the thickness of the first GaN sublayer is 20 to 50 nm.
Optionally, the thickness of the second GaN sublayer is 300-400 nm, and the thickness of the MgN sublayer is 10-30 nm.
The embodiment of the disclosure provides a preparation method of a light emitting diode epitaxial wafer, which comprises the following steps:
providing a substrate;
growing an AlN layer on the substrate;
growing a buffer layer on the AlN layer, wherein the buffer layer comprises a first composite layer and a second composite layer which are sequentially laminated on the substrate, the first composite layer comprises AlGaN sublayers and first GaN sublayers which are alternately laminated, the second composite layer comprises second GaN sublayers and MgN sublayers which are alternately laminated, or the second composite layer comprises the second GaN sublayers and the BN sublayers which are alternately laminated;
and sequentially growing an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer on the buffer layer.
Optionally, the growing a buffer layer on the AlN layer includes:
introducing reaction gas into the reaction cavity to grow the first composite layer on the AlN layer;
stopping introducing the reaction gas into the reaction cavity and raising the temperature of the reaction cavity;
keeping warm for a first set time;
growing the second composite layer.
Optionally, the growth temperature of the first composite layer is 700 ℃ to 850 ℃.
Optionally, the stopping of the introduction of the reaction gas into the reaction chamber and the raising of the temperature of the reaction chamber include:
stopping introducing the reaction gas into the reaction cavity and raising the temperature of the reaction cavity to 1000-1100 ℃.
Optionally, the growing the second composite layer comprises:
and raising the pressure of the reaction cavity to 200-500 Torr, and reducing the temperature in the reaction cavity by 30-100 ℃ to grow the second composite layer.
Optionally, the growth pressure of the first composite layer is 75 to 150 Torr.
Optionally, the first set time period is 2-5 min.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
the buffer layer of the light-emitting diode epitaxial wafer comprises a first composite layer stacked on a substrate, lattice mismatch between an AlGaN sublayer and a first GaN sublayer in the first composite layer and an AlN layer is small, lattice mismatch generated is also small, certain stress can be released in the growth process of the AlGaN sublayer and the first GaN sublayer which are stacked alternately, and dislocation defects accumulated in the first composite layer are few. The buffer layer further includes a second composite layer stacked on the first composite layer, and the second composite layer may have a structure of alternately stacked second GaN sub-layers and MgN sub-layers, alternately stacked second GaN sub-layers and BN sub-layers, or alternately stacked second GaN sub-layers and SiN sub-layers. The second composite layer similar to the superlattice structure can further play a role in releasing stress and relieving lattice mismatch. And the particle sizes of Mg atoms in the MgN sublayer, B atoms in the BN sublayer and Si atoms in the SiN sublayer are small, defects in the crystal and vacancies generated by dislocations can be filled during growth, so that the formation of the dislocations and the defects is reduced, the atoms can be used as fixing points while filling the vacancies, the movement and the extension of the dislocations and the defects are prevented, the effect of greatly reducing the dislocation density is achieved, and the defects and the dislocations extending to the n-type GaN layer are reduced. The crystal quality of the buffer layer is improved, the quality of the n-type GaN layer grown on the buffer layer is also improved, and the luminous efficiency of the finally obtained light-emitting diode epitaxial wafer is also improved.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 3 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present invention;
fig. 4 is a flowchart of another method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 1, the embodiment of the present disclosure provides a light emitting diode epitaxial wafer including a substrate 1, and an AlN layer 2, a buffer layer 3, an n-type GaN layer 4, a multiple quantum well layer 5, and a p-type GaN layer 6 sequentially stacked on the substrate 1.
The buffer layer 3 includes a first composite layer 31 and a second composite layer 32 sequentially stacked on the substrate 1, the first composite layer 31 includes AlGaN sublayers 311 and first GaN sublayers 312 alternately stacked, and the second composite layer 32 includes second GaN sublayers 321 and MgN sublayers 322 alternately stacked; or the second composite layer 32 includes the second GaN sublayers 321 and the BN sublayers alternately stacked.
The buffer layer 3 of the light emitting diode epitaxial wafer comprises a first composite layer 31 stacked on a substrate 1, lattice mismatch between an AlGaN sublayer 311 and a first GaN sublayer 312 in the first composite layer 31 and the substrate 1 is small, lattice mismatch generated is also small, a certain stress can be released during growth of the alternately stacked AlGaN sublayer 311 and the first GaN sublayer 312, and dislocation defects accumulated in the first composite layer 31 are few. The buffer layer 3 further includes a second composite layer 32 stacked on the first composite layer 31, and the second composite layer 32 may have a structure in which a second GaN sublayer 321 and a MgN sublayer 322 are alternately stacked and a second GaN sublayer 321 and a BN sublayer are alternately stacked. The second composite layer 32, which is similar to a superlattice structure, may further function to relieve stress and relieve lattice mismatch. And the particle diameters of Mg atoms in the MgN sublayer 322 and B atoms in the BN sublayer are smaller, defects in the crystal and vacancies generated by dislocations can be filled during growth, so that the formation of dislocations and defects is reduced, the atoms can be used as fixing points while filling the vacancies to prevent the movement and extension of the dislocations and the defects, and the effect of greatly reducing the dislocation density and reducing the defects and dislocations extending to the n-type GaN layer 4 is achieved. The crystal quality of the buffer layer 3 is improved, the quality of the n-type GaN layer 4 grown on the buffer layer 3 is also improved, and the luminous efficiency of the finally obtained light-emitting diode epitaxial wafer is also improved.
For example, the thickness of the first composite layer 31 may be 20 to 70nm, and the thickness of the second composite layer 32 may be 300to 500 nm. The obtained buffer layer 3 has good crystal quality, and can effectively relieve lattice mismatch.
Optionally, the number of AlGaN sublayers 311 and the number of first GaN sublayers 312 in the first composite layer 31 may be 1 to 5. The quality of the resulting first composite layer 31 is good.
Optionally, in the first composite layer 31, the thickness of the AlGaN sublayer 311 is 2 to 15nm, and the thickness of the first GaN sublayer 312 is 20 to 50 nm.
The thickness of the AlGaN sublayer 311 is in the above range, and can be well matched with the AlN layer 2, and the thickness of the AlGaN sublayer 311 is thin, the surface of the AlGaN sublayer 311 is not completely planar, the crystal nucleus of the first GaN sublayer 312 easily accumulates on the AlGaN sublayer 311 to grow, so that the growth transition to the first GaN sublayer 312 is facilitated, and the stable growth of the first GaN sublayer 312 is ensured. And the thickness of the first GaN sublayer 312 on the AlGaN sublayer 311 is within the above range, it can be ensured that the thickness of the first GaN sublayer 312 is sufficient, and the obtained first GaN sublayer 312 has good lattice quality and is dense.
Alternatively, in the first composite layer 31, the composition of Al in the AlGaN sub-layer 311 may be gradually decreased in the growth direction of the first composite layer 31.
In the first composite layer 31, the Al component in the AlGaN sublayer 311 closer to the AlN layer 2 is higher, the Al component in the AlGaN sublayer 311 farther from the AlN layer 2 and closer to the first GaN sublayer 312 is less, lattice mismatches between the AlGaN sublayer 311 and the AlN layer 2 and between the AlGaN sublayer 311 and the first GaN sublayer 312 are smaller, the AlGaN sublayer 311 can realize a good transition from the AlN layer 2 to the first GaN sublayer 312, and the crystal quality of the first composite layer 31 itself is relatively better.
Illustratively, when the first composite layer 31 has a plurality of AlGaN sublayers 311, the composition of Al in each AlGaN sublayer 311 may be fixed, but the composition of Al in the plurality of AlGaN sublayers 311 may gradually decrease in the growth direction of the first composite layer 31. The crystal quality of the obtained first composite layer 31 is good.
Optionally, the number of the second GaN sublayers 321 and the number of the MgN sublayers 322 in the second composite layer 32 may be both 1 to 5. The quality of the resulting second composite layer 32 is good.
Illustratively, the thickness of the second GaN sublayer 321 is 300-400 nm, and the thickness of the MgN sublayer 322 is 10-30 nm.
The thickness of the second GaN sublayer 321 within the above range can realize stable growth of the second GaN sublayer 321, ensure that the surface of the second GaN sublayer 321 is relatively flat, and facilitate transition to the n-type GaN layer 4. The thickness of the MgN sublayer 322 is relatively thin, the surface of the MgN sublayer 322 is not completely flat, so that Mg atoms can fill the vacancy formed by the defect and the dislocation, and the influence of the MgN sublayer 322 on the growth of the second GaN sublayer 321 can be reduced.
It should be noted that, when the BN sublayer is included in the second composite layer 32, the thickness of the BN sublayer may also be in the above range, which is not limited by the present disclosure.
In another implementation provided by the present disclosure, the MgN sublayer 322 may also be replaced with a SiN material, which is not limited by the present disclosure.
Fig. 2 is a schematic structural diagram of another light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 2, in another implementation manner provided by the present disclosure, the light emitting diode epitaxial wafer may include a substrate 1, and an AlN layer 2, a buffer layer 3, an undoped GaN layer, an n-type GaN layer 4, a multi-quantum well layer 5, an AlGaN electron blocking layer 7, a p-type GaN layer 6, and a p-type contact layer 8 grown on the substrate 1.
It should be noted that the buffer layer 3 shown in fig. 2 has the same structure as the buffer layer 3 shown in fig. 1, and the details are not repeated here.
Alternatively, the substrate 1 may be a sapphire substrate 1. Easy to manufacture and obtain.
Illustratively, the AlN layer 2 may have a thickness of 10 to 50 nm. And can play a certain role in relieving lattice mismatch.
Illustratively, the thickness of the undoped GaN layer may be 0.5 to 3 μm. The quality of the obtained light emitting diode epitaxial wafer is good.
In one implementation provided by the present disclosure, the thickness of the undoped GaN layer may also be 1 μm. The present disclosure is not so limited.
Alternatively, the n-type GaN layer 4 may be the n-type GaN layer 4, the doping element of the n-type GaN layer 4 may be Si, and the doping concentration of the Si element may be 1 × 1018～1×1019cm-3. The overall quality of the n-type GaN layer 4 is good.
Illustratively, the thickness of the n-type GaN layer 4 may be 0.5 to 3 μm. The obtained n-type GaN layer 4 has good quality as a whole.
In one implementation provided by the present disclosure, the thickness of the n-type GaN layer 4 may be 2 μm. The present disclosure is not so limited.
Illustratively, the MQW layer 5 includes a plurality of InGaN well layers 51 and GaN barrier layers 52 alternately stacked, the thickness of the InGaN well layers 51 may be 2-5 nm, and the thickness of the GaN barrier layers 52 may be 8-20 nm.
The number of layers of the InGaN well layer 51 and the number of layers of the GaN barrier layer 52 can be 8-15. The obtained multiple quantum well layer 5 has a good structure.
Optionally, the Al content of the AlGaN electron blocking layer 7 may be 0.15 to 0.25. The effect of blocking electrons is better.
Optionally, the thickness of the AlGaN electron blocking layer 7 can be 20-100 nm. The obtained AlGaN electron blocking layer 7 has good quality.
Enough cavities can be provided, and the overall cost of the light-emitting diode epitaxial wafer is not too high.
Optionally, the p-type GaN layer 6 can be doped with Mg, and the thickness of the p-type GaN layer 6 can be 100-200 nm.
Illustratively, the p-type contact layer 8 may have a thickness of 10 to 50 nm.
Note that, in the epitaxial wafer structure shown in fig. 2, in comparison with the epitaxial wafer structure shown in fig. 1, an AlGaN electron blocking layer 7 that prevents electron overflow is added between the multiple quantum well layer 5 and the p-type GaN layer 6, and a p-type contact layer 8 is also grown on the p-type GaN layer 6. The obtained epitaxial wafer has better quality and luminous efficiency.
Fig. 3 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 3, the method for manufacturing an led epitaxial wafer includes:
s101: a substrate is provided.
S102: an AlN layer is grown on the substrate.
S103: growing a buffer layer on the AlN layer, wherein the buffer layer comprises a first composite layer and a second composite layer which are sequentially laminated on the substrate, the first composite layer comprises AlGaN sublayers and first GaN sublayers which are alternately laminated, and the second composite layer comprises second GaN sublayers and MgN sublayers which are alternately laminated; or the second composite layer includes the second GaN sublayers and the BN sublayers alternately stacked.
In step S103, growing a buffer layer on the AlN layer may include:
introducing reaction gas into the reaction cavity to grow a first composite layer on the AlN layer; stopping introducing the reaction gas into the reaction cavity and increasing the temperature of the reaction cavity; keeping warm for a first set time; and growing a second composite layer.
After the first composite layer is grown, stopping introducing the reaction gas into the reaction cavity, and raising the temperature of the reaction cavity. The crystal nucleus of the first GaN sublayer in the first composite layer has two kinds of thermodynamically stable hexagonal symmetric wurtzite structures and metastable cubic symmetric zincblende structures during growth, the crystal nucleus of the thermodynamically stable hexagonal symmetric wurtzite structure in the first composite layer can be reserved under the action of high temperature under the condition of higher temperature rise, but the metastable cubic symmetric zincblende structure crystal nucleus can be removed under the action of high temperature, the crystal nucleus orientation of the obtained first GaN sublayer is more stable, the quality of the crystal nucleus is better, the defect caused by different crystal nucleus orientations in the first GaN sublayer can be reduced, and the quality of the first GaN sublayer is effectively improved.
Optionally, the growth pressure of the first composite layer may be 75 to 150 Torr.
The growth pressure of the first composite layer during growth is in the range above, the growth pressure of the first composite layer is low, the first composite layer can grow slowly during growth, and the quality of the obtained first composite layer is good. And when the growth pressure of the first composite layer during growth is lower, the epitaxial growth equipment can drive the change of the pressure and the airflow in the reaction cavity more easily, the airflow mobility is higher, the temperature rising speed can be increased, the subsequent steps can be conveniently carried out, the time required by the growth of the light-emitting diode epitaxial wafer is shortened, and the preparation efficiency of the light-emitting diode epitaxial wafer is improved.
Optionally, the growth temperature of the first composite layer is 700 ℃ to 850 ℃.
The growth temperature of the first composite layer is low, the first composite layer can grow slowly, and the quality of the obtained first composite layer is good. And Al atoms and NH under the condition of low temperature and lower pressure3The pre-reaction is weaker, more AlGaN crystal nuclei can be formed on the AlN layer, the lattice mismatch between AlGaN crystal lattices and the AlN buffer layer is smaller, and the AlGaN crystal nuclei are easy to transit to the GaN crystal nuclei.
In step S103, stopping introducing the reaction gas into the reaction chamber and increasing the temperature of the reaction chamber may include:
stopping introducing the reaction gas into the reaction cavity and raising the temperature of the reaction cavity to 1000-1100 ℃.
And raising the temperature to 950-1100 ℃, so that metastable state cubic symmetry sphalerite structure crystal nuclei in the GaN crystal nuclei can be stably removed, and the consistency of the crystal nuclei in the first GaN sublayer is improved.
For example, the first set time period may be 2-5 min. The crystal nucleus of the metastable state cubic symmetry sphalerite structure in the first GaN sublayer can be removed within enough time, and the preparation cost of the light-emitting diode epitaxial wafer is not increased too much.
Illustratively, the first composite layer may be grown in a mixed gas environment of nitrogen and ammonia.
Mixed gas of nitrogen and ammoniaCan inhibit NH in body environment3And the reaction of hydrogen and Al atoms is avoided, and the stable growth of the AlGaN sublayer is ensured.
Optionally, the growing the second composite layer comprises:
raising the pressure of the reaction chamber to 200-500 Torr, and lowering the temperature in the reaction chamber by 30-100 ℃ to grow a second composite layer.
The growth pressure and the growth temperature of the second composite layer are in a proper range, the second composite layer can grow in a stable environment, and the obtained second composite layer has good growth quality. And the temperature and pressure range can not cause great influence on the first composite layer, and the overall quality of the buffer layer is high.
Illustratively, the growth temperature of the second composite layer may be 950 to 1070 ℃.
S104: and sequentially growing an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer on the buffer layer.
The technical effect of the method shown in fig. 3 can refer to the technical effect of the light emitting diode epitaxial wafer shown in fig. 1, and therefore, the technical effect of the method shown in fig. 3 is not described again here. Fig. 1 is a view of an epitaxial wafer structure of the light emitting diode after step S104 is performed.
Fig. 4 is a flowchart of another method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 4, the method for manufacturing an led epitaxial wafer includes:
s201: a substrate is provided.
Wherein the substrate may be a sapphire substrate. Easy to realize and manufacture.
Optionally, step S201 may further include: and treating the surface of the substrate for growing the epitaxial layer for 5-6 min in a hydrogen atmosphere.
For example, when the substrate is processed for growing the surface of the epitaxial layer, the temperature of the reaction chamber may be 1000 to 1100 ℃, and the pressure of the reaction chamber may be 200 to 500 Torr.
S202: an AlN layer is grown on the substrate.
The AlN layer may be obtained by magnetron sputtering.
Illustratively, the deposition temperature of the AlN layer may be 400 to 800 ℃, the sputtering power may be 3000 to 5000W, and the pressure may be 2 to 20 mtorr. The obtained AlN layer has good quality.
S203: a buffer layer is grown on the AlN layer.
It should be noted that the structure of the buffer layer grown on the AlN layer is the same as the structure and growth method of the buffer layer provided in fig. 3, and therefore, the structure and growth method of the buffer layer are not described herein again.
S204: and growing an undoped GaN layer on the buffer layer.
The thickness of the non-doped GaN layer can be 0.5-3 um.
Illustratively, the growth temperature of the non-doped GaN layer can be 1000-1100 ℃, and the growth pressure is controlled at 100-300 Torr. The obtained undoped GaN layer has better quality.
S205: and growing an n-type GaN layer on the undoped GaN layer.
Alternatively, the growth temperature of the n-type GaN layer may be 1000 to 1100 ℃, and the growth pressure of the n-type GaN layer may be 100 to 300 Torr.
S206: and growing a multi-quantum well layer on the n-type GaN layer.
The multiple quantum well layer comprises InGaN well layers and GaN barrier layers which are alternately stacked, the thickness of each InGaN well layer can be 2-3 nm, and the thickness of each GaN barrier layer can be 9-20 nm.
Optionally, in the multiple quantum well layer, the growth temperature of the InGaN well layer and the growth temperature of the InGaN well layer may be 700 to 830 ℃, and the growth temperature of the GaN barrier layer, and the growth temperature of the third GaN barrier layer may be 800 to 960 ℃. The quality of the multiple quantum well layer grown under the condition is good, and the light emitting efficiency of the light emitting diode can be ensured.
S207: and growing an AlGaN electronic barrier layer on the multi-quantum well layer.
The growth temperature of the AlGaN electron blocking layer can be 800-1000 ℃, and the growth pressure of the AlGaN electron blocking layer can be 100-300 Torr. The AlGaN electron blocking layer grown under the condition has good quality, and is beneficial to improving the luminous efficiency of the light-emitting diode.
S208: and growing a p-type GaN layer on the AlGaN electron blocking layer.
Alternatively, the growth pressure of the p-type GaN layer may be 200 to 600Torr, and the growth temperature of the p-type GaN layer may be 800 to 1000 ℃.
S209: and growing a p-type contact layer on the p-type GaN layer.
Alternatively, the growth pressure of the p-type contact layer may be 100 to 300Torr, and the growth temperature of the p-type contact layer may be 800 to 1000 ℃.
The method for manufacturing the light emitting diode epitaxial wafer shown in fig. 4 provides a more detailed method for growing the light emitting diode epitaxial wafer compared to the method for manufacturing the light emitting diode shown in fig. 3.
The structure of the light emitting diode epitaxial wafer after the step S209 is performed can be seen in fig. 2.
It should be noted that, in the embodiments of the present disclosure, a VeecoK465iorC4 orrbmcvd (metalorganic chemical vapor deposition) apparatus is used to implement the growth method of the light emitting diode. By using high-purity H2(Hydrogen) or high purity N2(Nitrogen) or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP)2Mg) as a P-type dopant.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (10)

1. A light emitting diode epitaxial wafer comprises a substrate, and an AlN layer, a buffer layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer which are sequentially laminated on the substrate,
the buffer layer comprises a first composite layer and a second composite layer which are sequentially stacked on the substrate, the first composite layer comprises AlGaN sublayers and first GaN sublayers which are alternately stacked, the second composite layer comprises second GaN sublayers and MgN sublayers which are alternately stacked, or the second composite layer comprises the second GaN sublayers and the BN sublayers which are alternately stacked.
2. The light-emitting diode epitaxial wafer according to claim 1, wherein the AlGaN sub-layer has a thickness of 2 to 15nm, and the first GaN sub-layer has a thickness of 20 to 50 nm.
3. The light-emitting diode epitaxial wafer according to claim 1, wherein the thickness of the second GaN sublayer is 300-400 nm, and the thickness of the MgN sublayer is 10-30 nm.
4. A preparation method of a light emitting diode epitaxial wafer is characterized by comprising the following steps:
providing a substrate;
growing an AlN layer on the substrate;
growing a buffer layer on the AlN layer, wherein the buffer layer comprises a first composite layer and a second composite layer which are sequentially laminated on the substrate, the first composite layer comprises AlGaN sublayers and first GaN sublayers which are alternately laminated, the second composite layer comprises second GaN sublayers and MgN sublayers which are alternately laminated, or the second composite layer comprises the second GaN sublayers and the BN sublayers which are alternately laminated;
and sequentially growing an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer on the buffer layer.
5. The method according to claim 4, wherein the growing a buffer layer on the AlN comprises:
introducing reaction gas into the reaction cavity to grow the first composite layer on the AlN layer;
stopping introducing the reaction gas into the reaction cavity and raising the temperature of the reaction cavity;
keeping warm for a first set time;
growing the second composite layer.
6. The method of claim 5, wherein the first composite layer is grown at a temperature of 700 ℃ to 850 ℃.
7. The method as claimed in claim 6, wherein the stopping of the supply of the reaction gas into the reaction chamber and the raising of the temperature of the reaction chamber comprises:
stopping introducing the reaction gas into the reaction cavity and raising the temperature of the reaction cavity to 1000-1100 ℃.
8. The method of manufacturing according to claim 6, wherein the growing the second composite layer comprises:
and raising the pressure of the reaction cavity to 200-500 Torr, and reducing the temperature in the reaction cavity by 30-100 ℃ to grow the second composite layer.
9. The method according to any one of claims 5 to 8, wherein the growth pressure of the first composite layer is 75 to 150 Torr.
10. The method according to any one of claims 5 to 8, wherein the first predetermined period of time is 2 to 5 min.
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