CN112350681A - 一种频率可调的薄膜体声波谐振器 - Google Patents

一种频率可调的薄膜体声波谐振器 Download PDF

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CN112350681A
CN112350681A CN202011134557.6A CN202011134557A CN112350681A CN 112350681 A CN112350681 A CN 112350681A CN 202011134557 A CN202011134557 A CN 202011134557A CN 112350681 A CN112350681 A CN 112350681A
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frequency
electrode layer
upper electrode
bulk acoustic
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孙成亮
高超
邹杨
罗天成
谷曦宇
曲远航
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Wuhan Memsonics Technologies Co Ltd
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Wuhan University WHU
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency

Abstract

本发明涉及谐振器技术，具体涉及一种频率可调的薄膜体声波谐振器，自下而上包括衬底、声反射结构、种子层、下电极层、压电薄膜层、上电极层，其中上电极层为条形环绕结构。上电极层的条形环绕结构其宽度、长度、环绕间距、环绕次数均可调整。该薄膜体声波谐振器通过将上电极层设置成条形环绕结构，改变条形环绕结构的长度、宽度、环绕间距、环绕次数，从而改变谐振器的工作频率，并且能够在不改变各层材料厚度的条件下调节薄膜体声波谐振器的谐振频率，实现在一片晶圆上制造不同工作频率的谐振器。

Description

一种频率可调的薄膜体声波谐振器
技术领域
本发明属于谐振器技术领域，尤其涉及一种频率可调的薄膜体声波谐振器。
背景技术
随着无线通讯技术的超高速发展和通讯终端的多功能化，对工作在射频频段的频率器件提出了更高性能的要求。目前射频系统中常用的带通滤波器主要有微波介质陶瓷滤波器和声表面波(SAW)滤波器。介质陶瓷滤波器虽然性能好但存在体积大和工艺兼容性差等问题，限制了其进一步的发展。虽然SAW滤波器具有较高的Q值，几何尺寸也比较小，但由于其叉指电极的指宽和指间距与工作频率成反比，增加了光刻工艺的难度，使其高频应用受到限制。
相对于传统的介质陶瓷滤波器和SAW滤波器，薄膜体声波谐振器(FBAR)可以很好的工作在几百MHz到5-6GHz的范围，尤其是在高频率的应用中，FBAR具有非常大的优势。随着无线通信的朝多频段、多制式、多协议的快速发展，且整机越来越小，集成度和通信频率越来越高，频率资源也越来越拥挤，对滤波器性能的要求也随之增高。由于FBAR滤波器具有高频率，低损耗，低温飘特性，陡峭的滤波器裙边和极高的Q值、工作频率、灵敏度、分辨率、可承受功率容量，小体积以及制备工艺与CMOS兼容的特性，占据了大部分无线通讯场的应用领域。
FBAR的谐振频率是由厚度所决定，这就造成在一张晶圆上无法制造多个工作在不同频率的谐振器。近年来，电调谐由于结构简单，调谐方便受到了广泛关注。现有的薄膜体声波谐振器电调技术主要有：使用外接LC电路或PIN可变电容来实现电调；利用铁电体在不同偏压下介电常数的变化来调谐；使用片上集成的可变电容来实现可变电容。但外加元件进行调谐时，外加元件的电容电感的值对FBAR的性能有很大的影响。因此急需一种工艺简单，易于集成且适合量产的可调谐的薄膜体声波谐振器，使其能够实现在一片晶圆上制造不同谐振频率的FBAR。
发明内容
本发明的目的是提供一种可在同一片晶圆上制造的频率可调的薄膜体声波谐振器。
为解决上述技术问题，本发明采用如下技术方案：一种频率可调的薄膜体声波谐振器，自下而上包括衬底、声反射结构、种子层、下电极层、压电薄膜层、上电极层，其中上电极层为条形环绕结构。
在上述频率可调的薄膜体声波谐振器中，上电极层的条形环绕结构其宽度、长度、环绕间距、环绕次数均可调整。
在上述频率可调的薄膜体声波谐振器中，压电薄膜层刻蚀成与上电极层相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
在上述频率可调的薄膜体声波谐振器中，下电极层刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
在上述频率可调的薄膜体声波谐振器中，种子层刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
在上述频率可调的薄膜体声波谐振器中，声反射结构为空腔，或为高低声阻抗材料构成的声反射镜。
在上述频率可调的薄膜体声波谐振器中，衬底为硅衬底、SOI衬底或蓝宝石衬底；种子层材料为AlN、ScAlN、AlON、SiO2、Si3N4或SiC；下电极层和上电极层为金属薄膜，材料为Mo、Al、Pt、Au；压电薄膜层为AlN、ScAlN、YAlN、PZT、LiNbO3或LiTaO3。
本发明的有益效果：通过将上电极层设置成条形环绕结构，改变条形环绕结构的长度、宽度、环绕间距、环绕次数，从而改变谐振器的工作频率，并且能够在不改变各层材料厚度的条件下调节薄膜体声波谐振器的谐振频率，实现在一片晶圆上制造不同工作频率的谐振器。
附图说明
图1是本发明一种频率可调的薄膜体声波谐振器实施例1的立体结构示意图；
图2是本发明一种频率可调的薄膜体声波谐振器实施例1纵向剖面示意图；
图3是本发明一种频率可调的薄膜体声波谐振器实施例1的俯视图；
其中，110-衬底、120-空腔、130-种子层、140-下电极、150-压电薄膜、160-上电极；
图4是本发明一种频率可调的薄膜体声波谐振器实施例1的软件仿真模拟结果图；
图5是本发明一种频率可调的薄膜体声波谐振器实施例2纵向剖面示意图；
其中，210-衬底、220-声反射镜、221-低声阻抗材料、222-高声阻抗材料、230-种子层、240-下电极、250-压电薄膜、260-上电极。
具体实施方式
下面将结合本发明实施例对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。
下面结合具体实施例对本发明作进一步说明，但不作为本发明的限定。
压电材料是一种是受到压力作用时会在两端面间出现电压(压电效应)的晶体材料，同时在外电场作用下压电材料也会产生形变(逆压电效应)。谐振器是利用材料的逆压电效应，将电能转化为声能，声波会在介质与空气的界面上发生反射，在两个界面之间形成驻波振荡，此时的声波损耗最小。谐振器只能使特定频率的波通过，并且谐振器的电学阻抗特性曲线中有两个相隔很近的谐振频率：串联谐振频率和并联谐振频率。利用这一阻抗特性，将若干谐振器级联就可以设计出满足无线通信要求的射频滤波器和双工器。
本实施例是通过以下技术方案来实现的，一种频率可调的薄膜体声波谐振器，自下而上包括衬底、声反射结构、种子层、下电极层、压电薄膜层、上电极层，其中上电极层为条形环绕结构。
并且，上电极层为条形环绕结构，条形环绕结构的宽度、长度、环绕间距、环绕次数可调。
并且，压电薄膜层可以刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
并且，下电极层可以刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
并且，种子层可以刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
并且，声反射结构为空腔，或由高低声阻抗材料构成的声反射镜。
实施例1
如图1所示，为一种频率可调的薄膜体声波谐振器实施例1的立体结构示意图，图2所示为纵向剖面示意图，图3所示为俯视图。在该实施例中，衬底110为硅衬底，声反射结构120为空腔，上电极160为条形环绕结构，压电薄膜层150、下电极层140、种子层130均未刻蚀。
如图4所示，为一种频率可调的薄膜体声波谐振器实施例1的软件仿真模拟结果图，波谷与波峰分别表示薄膜体声波谐振器的谐振频率与反谐振频率。虚线表示上电极条形环绕结构的长度、宽度、环绕间距均为0.6，环绕次数为50次时的软件模拟结果图，实线表示上电极条形环绕结构的长度、宽度、环绕间距均为0.7，环绕次数为50次时的软件模拟结果图。由图4可以看出，改变条形环绕结构的长度、宽度、环绕间距、环绕次数，薄膜体声波谐振器的谐振频率和反谐振频率均发生了改变。
因此，本实施例可以实现在不改变各层材料厚度的条件下调节薄膜体声波谐振器的谐振频率，实现在一片晶圆上制造不同工作频率的谐振器。
实施例2
如图5所示，为一种频率可调的薄膜体声波谐振器实施例2纵向剖面示意图。在该实施例中，衬底210为硅衬底，声反射结构220为声反射镜，221为声反射镜中的低阻抗材料，222为声反射镜中的高阻抗材料，上电极260为条形环绕结构，压电薄膜层250、下电极层240、种子层230均未刻蚀。调节该实施例中条形环绕结构的长度、宽度、环绕间距、环绕次数，同样可以达到改变薄膜体声波谐振器的谐振频率的效果。
以上仅为本发明较佳的实施例，并非因此限制本发明的实施方式及保护范围，对于本领域技术人员而言，应当能够意识到凡运用本发明说明书内容所作出的等同替换和显而易见的变化所得到的方案，均应当包含在本发明的保护范围内。

Claims (7)

1.一种频率可调的薄膜体声波谐振器，其特征是，自下而上包括衬底、声反射结构、种子层、下电极层、压电薄膜层、上电极层，其中上电极层为条形环绕结构。
2.如权利要求1所述频率可调的薄膜体声波谐振器，其特征是，上电极层的条形环绕结构其宽度、长度、环绕间距、环绕次数均可调整。
3.如权利要求1所述频率可调的薄膜体声波谐振器，其特征是，压电薄膜层刻蚀成与上电极层相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
4.如权利要求1所述频率可调的薄膜体声波谐振器，其特征是，下电极层刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
5.如权利要求1所述频率可调的薄膜体声波谐振器，其特征是，种子层刻蚀成与上电极相同的条形环绕结构且在竖直方向上重合，或不刻蚀。
6.如权利要求1所述频率可调的薄膜体声波谐振器，其特征是，声反射结构为空腔，或为高低声阻抗材料构成的声反射镜。
7.如权利要求1所述频率可调的薄膜体声波谐振器，其特征是，衬底为硅衬底、SOI衬底或蓝宝石衬底；种子层材料为AlN、ScAlN、AlON、SiO2、Si3N4或SiC；下电极层和上电极层为金属薄膜，材料为Mo、Al、Pt、Au；压电薄膜层为AlN、ScAlN、YAlN、PZT、LiNbO3或LiTaO3。
CN202011134557.6A 2020-10-21 2020-10-21 一种频率可调的薄膜体声波谐振器 Pending CN112350681A (zh)

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