CN111130495B - 超高频谐振器 - Google Patents
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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Abstract
公开了一种超高频谐振器，包括带有空腔的衬底，所述衬底表面设置有压电层，所述压电层上具有多个条形正电极和多个条形负电极，所述多个条形正电极和所述多个条形负电极呈放射状分布于所述压电层上，其中所述条形正电极与所述条形负电极交错分布，两个相邻的所述条形正电极与所述条形负电极之间的距离至少为一个波长。本公开的新型超高频谐振器，不仅满足4.5G以上的频率范围，且机电耦合系数高至30％以上，远远大于体声波谐振器和声表面波谐振器，满足通信用高频率，大带宽的要求。
Description
技术领域
本公开涉及MEMS谐振器领域，特别地涉及超高频体声波谐振器。
背景技术
无线和移动通信系统的迅猛发展，推动着组件性能和系统集成技术的快速创新。为了获得更快的信号处理和减少集成的复杂性，小型化和与CMOS技术兼容的微机电系统(MEMS)谐振器成为了新一代的核心器件，因此高性能的MEMS谐振器技术作为先进的无线通信系统射频前端的基础组件具有很高的需求。
目前射频滤波器一般由声表面波谐振器(SAW)和薄膜体声波谐振器(FBAR)搭建，但是对于更高频段的滤波器，声表面声波谐振器的叉指电极需要更小的指宽，过小的电极宽度会增大能量的损失，影响谐振器的功率处理能力，以及增大加工难度；而薄膜体声波谐振器在高频应用中需要更薄的压电薄膜，过薄的薄膜制造困难且存在的伪模式增多。
当前市场尚无既满足高频率(4.5GHz以上)，又满足大带宽(30％以上)的谐振器。因此，亟需一种新型高频谐振器来满足5G甚至更高频的通信需求。
发明内容
本公开提出了一种新型超高频谐振器，满足4.5G以上的频率范围。
根据本公开实施例的一方面，一种谐振器，包括带有空腔的衬底，所述衬底表面设置有压电层，所述压电层上具有多个条形正电极和多个条形负电极，所述多个条形正电极和所述多个条形负电极呈放射状分布于所述压电层上，其中所述条形正电极与所述条形负电极交错分布。
在上述的谐振器，两个相邻的所述条形正电极与所述条形负电极之间的距离至少为一个波长。
本公开的新型超高频谐振器，不仅满足4.5G以上的频率范围，且机电耦合系数高至30％以上，远远大于体声波谐振器和声表面波谐振器，满足通信用高频率，大带宽的要求。除此之外，该谐振器制作工艺简单，加工难度低，产业化前景十分好。
附图说明
下面结合附图和具体实施方式对本公开作进一步详细说明。
图1示出了根据本公开的一个实施例的超高频谐振器电极分布图。
图2a示出了根据本公开的一个实施例的超高频谐振器的俯视图。
图2b示出了图2a所示的超高频谐振器沿A-A’方向的剖视图。
图3示出了根据本公开的另一个实施例的超高频谐振器的俯视图。
图4示出了根据本公开的一个实施例的超高频谐振器阻抗曲线。
具体实施方式
如图1～图4，超高频谐振器包括压电层101以及沉积在压电层101上的多个条形正电极102和多个条形负电极103。如图1、2a，压电层101可为圆形、五边形、六边形等规则或不规则图形。压电层101材料可为铌酸锂、钽酸锂、氮化铝、钪掺杂氮化铝等具有压电性质的薄膜材料。
多个条形正电极102和多个条形负电极103呈放射状分布于压电层101上。且条形正电极102与条形负电极103交错分布，即两个条形正电极102之间分布有条形负电极103，两个条形负电极103之间分布有条形正电极102。条形电极102，103材料可为钼、铝、铂、金等金属材料。
如图2a、2b，压电层101设置在带有空腔的衬底106上。衬底106可为硅或蓝宝石。多个条形正电极102通过导体104连接，多个条形负电极103通过导体105连接。导体104，105可为圆形、或多边形、或电桥结构。相邻两个电极102，103的间距至少在一个波长以上，正负交替的电场激励压电材料产生高频声波，进而引发谐振响应。本公开谐振器耦合了压电系数为e_24和e_15的压电材料，进而在压电层101内部形成驻波，有效增大了机电转换效率，提高了谐振器的机电耦合系数。且两种模态波的耦合降低了其他寄生模态的影响，抑制了伪模式，提升了谐振器的性能。
图4示出了根据本公开的一个实施例的超高频谐振器阻抗曲线。从阻抗曲线中可以十分清晰的看到，本公开的谐振器能够实现超高的谐振频率fs和反谐振频率fp,在压电材料选用铌酸锂时，谐振器带宽Δf可达915MHz，机电耦合系数K2 eff可达到34.48％。本公开的谐振器不仅可以抑制其他阶模态，也可以抑制伪模态，在阻抗曲线中表现为纹波的减少，即曲线更光滑。这大大提高了谐振器的性能，为进一步搭建滤波器提供了极佳的解决方案。
Claims (3)
1.一种谐振器，包括带有空腔的衬底，所述衬底表面设置有压电层，其特征在于，所述压电层上具有多个条形正电极和多个条形负电极，所述多个条形正电极和所述多个条形负电极呈放射状分布于所述压电层上，其中所述条形正电极与所述条形负电极交错分布，两个相邻的所述条形正电极与所述条形负电极之间的距离至少为一个波长。
2.根据权利要求1所述的谐振器，其特征在于，所述压电层为铌酸锂、或钽酸锂、或氮化铝、或钪掺杂氮化铝。
3.根据权利要求1所述的谐振器，其特征在于，所述压电层为圆形、或五边形、或六边形。
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