CN112349625A - 用于开闭工艺腔进出口的挡板及包括其的基板处理装置 - Google Patents
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Abstract
本发明涉及用于开闭工艺腔进出口的挡板及包括其的基板处理装置,本发明的基板处理装置包括:工艺腔,具有处理空间,在一侧形成有用于使基板进出的进出口;基板支撑单元,设置于上述处理空间内,用于支撑基板;挡板,设置于上述进出口,用于开闭上述进出口;以及多个挡板加热器,设置于上述挡板内,向上述工艺腔的内部传递热量。
Description
技术领域
本发明涉及用于开闭工艺腔进出口的挡板及包括其的基板处理装置,更详细地,用于向工艺腔的内部提供均匀的温度分布。
背景技术
在制备半导体器件的工艺中,执行照相、蚀刻、薄膜沉积、离子注入以及清洗等多种工序。在这些工序中的蚀刻、薄膜沉积、离子注入以及清洗工序中,使用利用工艺气体的基板处理装置。
通常,用于制备半导体器件的基板处理装置包括用于进行基板的工艺处理的多个工艺腔和移送单元。移送单元向工艺腔的内部移送基板。并且,在工艺腔设置有用于使基板进出的挡板。
为了使基板在工艺腔内进出,必须设置挡板,但是,当开放挡板时,可导致如下的问题,即,使外部气流流入,或者,由于挡板及挡板周围部的温度差异,使工艺腔内部的温度分布不均匀。
若工艺腔内的温度分布不均匀,则在工艺腔中,可使整体基板的孔径、线宽等关键尺寸(CD)不均匀。在最近导入的超微细工艺中的关键尺寸不均匀可导致工艺不良。
发明内容
本发明用于解决如上所述的现有技术的问题,本发明的目的在于,提供可向工艺腔内提供均匀的温度分布的用于开闭工艺腔进出口的挡板及包括其的基板处理装置。
为了实现如上所述的目的,本发明的基板处理装置包括:工艺腔,具有处理空间,在一侧形成有用于使基板进出的进出口;基板支撑单元,设置于上述处理空间内,用于支撑基板;挡板,设置于上述进出口,用于开闭上述进出口;以及多个挡板加热器,设置于上述挡板内,向上述工艺腔的内部传递热量。
并且,在实施例中,上述挡板加热器可以被单独控制。
并且,在实施例中,上述挡板可通过朝向上方驱动来开放上述进出口,可通过朝向下方驱动来密封上述进出口。
并且,在实施例中,在上述多个挡板加热器中,越配置于上述挡板的下侧,则单独控制的挡板加热器的温度可越高。
并且,在实施例中,在上述挡板的外侧壁可设置有用于阻隔上述挡板的热传递的隔热部件。
并且,在实施例中,在上述进出口可设置有空气幕形成部及空气幕回收部,上述空气幕形成部形成用于防止外部气流流入的空气幕,上述空气幕回收部用于回收上述空气幕。
并且,在实施例中,上述空气幕形成部设置于上述进出口的左侧及右侧中的一侧,上述空气幕回收部设置于上述进出口的另一侧。
并且,在实施例中,上述空气幕沿着水平方向形成。
并且,在实施例中,上述空气幕可在上述进出口开放的情况下形成。
并且,在实施例中,本发明可包括侧壁腔加热器,上述侧壁腔加热器设置于上述工艺腔的内侧侧壁,向上述工艺腔的内部传递热量。
并且,在实施例中,本发明还可包括上壁腔加热器,上述上壁腔加热器设置于上述工艺腔的内侧上壁,向上述工艺腔的内部传递热量。
并且,在实施例中,本发明还可包括:侧壁腔加热器,设置于上述工艺腔的内侧侧壁,向上述工艺腔的内部传递热量;以及上壁腔加热器,设置于上述工艺腔的内侧上壁,向上述工艺腔的内部传递热量。
并且,在实施例中,上述上壁腔加热器及上述侧壁腔加热器设置有多个,被单独控制。
并且,在实施例中,上述多个挡板加热器中的与上述上壁腔加热器隔得远的挡板加热器的温度可被设置成高于上述多个挡板加热器中的与上述上壁腔加热器接近的挡板加热器的温度。
并且,在实施例中,上述多个挡板加热器从上部朝向下部的方向依次设置。
本发明提供用于开闭工艺腔进出口的挡板,上述挡板包括向工艺腔的内部传递热量的多个挡板加热器。
并且,在实施例中,上述多个挡板加热器被单独控制。
并且,在实施例中,上述多个挡板加热器从上部朝向下部的方向依次设置于上述挡板内。
并且,在实施例中,上述挡板通过朝向上方驱动来开放上述进出口,通过朝向下方驱动来密封上述进出口,在上述多个挡板加热器中,越配置于上述挡板的下侧,则单独控制的挡板加热器的温度越高。
本发明的基板处理装置可通过包括上壁腔加热器、侧壁腔加热器以及挡板加热器来向工艺腔内提供均匀的温度分布。
根据本发明,沿着从进出口的左侧到侧方向或从右侧到左侧方向的水平方向形成空气幕,当基板进出时,可使基板引起的空气幕的阻隔最小化。因此,当基板进出时,可有效防止气流向工艺腔内的处理空间流入。
附图说明
图1为示出本发明实施例的基板处理装置的剖视图。
图2为用于说明图1所示的向工艺腔的内部提供均匀的温度分布的基板处理装置的结构的图。
图3a为示出挡板处于关闭状态的基板处理装置的图。
图3b为示出挡板处于开启状态的基板处理装置的图。
具体实施方式
需要解释的是,本发明的实施例可变形为多种形态,本发明的范围并不局限于以下所述的实施例。本实施例为了对本技术领域的普通技术人员更加完整地说明本发明而提供。因此,为了说明的明确性,附图中的结构要素的形状等有所夸张。
在本实施例中,以在腔室内利用等离子来对基板进行蚀刻处理的基板处理装置为例进行说明。但是,本发明并不限定于此,可适用于所有设置有可提供热环境的工艺腔的基板处理装置。
图1为示出本发明实施例的基板处理装置的剖视图。
参照图1,基板处理装置10包括工艺腔100、基板支撑单元200、供气单元300、等离子源400、排气单元500以及隔板单元600。
工艺腔100在内部提供处理基板W的处理空间101。腔室100以圆形筒形状提供。被腔室100上部的上壁和侧面的侧壁密封。在腔室100的侧壁102形成有进出口106。将进出口106用作使基板W进出的入口。在腔室100的外侧面提供门108。门108用于开闭进出口106。壳体100以金属材质提供。例如,腔室100能够以铝材质提供。在腔室100的底面形成有排气孔150。
基板支撑单元200在处理空间101支撑基板W。基板支撑单元200能够以利用静电力来支撑基板W的静电吸盘200形态提供。选择性地,基板支撑单元200能够以如机械夹持的多种方式支撑基板W。
静电吸盘200包括支撑板210、聚焦环250以及底座230。支撑板210以包含电介质材质的介电板210提供。在介电板210的上部面直接放置基板W。介电板210以圆板形状提供。介电板210可具有小于基板W的半径。在介电板210的内部设置内部电极212。内部电极212与电源(未图示)相连接,可从电源(未图示)接收电力。内部电极212从所施加的电力(未图示)提供静电力,使得基板W吸附于介电板210。在介电板210的内部设置用于加热基板W的支撑单元加热器214。支撑单元加热器214可位于内部电极212的下侧。
支撑单元加热器214能够以螺纹形状的线圈提供。例如,介电板210能够以陶瓷材质提供。
底座230用于支撑介电板210。底座230位于介电板210的下侧,固定结合于介电板210。底座230的上部面呈其中心区域比边缘区域高的具有高度差的形状。底座230具有其上部面的中心区域与介电板210的底面相对应的面积。在底座230的内部形成有冷却流路232。冷却流路232以使冷却流体循环的通道提供。冷却流路232可在底座230的内部以螺纹形状提供。底座与位于外部的高频电源234相连接。高频电源234向底座230施加电力。向底座230施加的电力引导在腔室100中生成的等离子向底座230移动。底座230能够以金属材质提供。
聚焦环250使等离子集中在基板W。聚焦环250包括内侧环252以及外侧环254。内侧环252以包围介电板210的环形提供。内侧环252位于底座230的边缘区域。内侧环252的上部面的高度与介电板210的上部面的高度相同。内侧环252上部面的内侧部回城基板W的底面边缘区域。例如,内侧环252能够以导电性材质提供。外侧环254以包围内侧环252的环形状提供。外侧环254在底座230的边缘区域与内侧环252相邻。外侧环254的上部面的高度高于内侧环252的上部面的高度。外侧环254能够以绝缘物质提供。
供气单元300向被基板支撑单元200支撑的基板W提供工艺气体。供气单元300包括储气部350、供气管线330以及进气口310。供气管线330使储气部350与进气口310相连接。通过供气管线330向进气口310供给储存于储气部350的工艺气体。进气口310设置于腔室100的上部壁。进气口310与基板支撑单元200相向。如一例,进气口310可设置于腔室100上部壁的中心。在供气管线330设置有阀,由此,开闭其内部通道,或者,可调节在其内部通道流动的气体的流量。例如,工艺气体可以为蚀刻气体。
等离子源400将腔室100内的工艺气体激发为等离子状态。等离子源400可使用电感耦合等离子体(ICP,inductively coupled plasma)源。等离子源400包括天线410以及外部电源430。天线410配置于腔室100的外侧上部。天线410以缠绕多次的螺纹形状提供,与外部电源430相连接。天线410从外部电源430接收电力。接收电力的天线410在腔室100的处理空间101形成放电空间。滞留在放电空间的工艺气体可激发为等离子状态。
排气单元500将处理空间101形成为真空气氛。排气单元500包括排气管线520以及减压部件540。排气管线520与排气孔150相连接,减压部件540设置于排气管线520。
在减压部件540生成的减压力通过排气管线520传递至处理空间101。由此,处理空间101可被减压来形成真空气氛。排气单元500通过在工艺进行过程中产生的副产物及滞留在腔室100内的等离子通过真空压排出至腔室100的外部。
隔板单元600引导等离子在处理空间101中按照区域均匀地排气。隔板单元600位于处理空间101中的腔室100的内侧壁与基板支撑单元200之间。
以下,参照图2至图3b详细说明向工艺腔的内部提供均匀的温度分布的基板处理装置的结构。
图2为用于说明图1所示的向工艺腔的内部提供均匀的温度分布的基板处理装置的结构的图。
参照图2,工艺腔100包括于上面相应的上壁104以及与侧面相应的侧壁102。工艺腔100具有被上壁104和侧壁102密封的处理空间101。
在上壁104设置有上壁腔加热器1041,上述上壁腔加热器1041向工艺腔100内的处理空间101传递热量。并且,在侧壁102设置有侧壁腔加热器1021,上述侧壁腔加热器1021向工艺腔100内的处理空间101传递热量。
上壁腔加热器1041及侧壁腔加热器1021可设置有多个,可被单独控制。上壁腔加热器1041及侧壁腔加热器1021能够以线形态、面形态、之字形形态或线圈形态等的各种形态设置。
在位于工艺腔100的侧壁中的一侧的侧壁102可设置有用于使基板进出的进出口106、侧壁腔加热器1021、空气幕形成部1022以及空气幕回收部1023。
进出口106执行可使基板进出的通道作用。在进出口106的左右侧中的一侧设置有空气幕形成部1022,在另一侧设置有空气幕回收部1023。位于一侧的空气幕形成部1022沿着水平方向朝向位于另一侧的空气幕回收部1023形成空气幕1024。在后述内容中,参照图3b说明空气幕形成部1022及空气幕回收部1023。
挡板108设置于进出口106,通过驱动部(未图示)沿着上下方向驱动来开闭进出口106。挡板108通过向侧壁102内插入来开放进出口106。并且,挡板108具有从侧壁102突出来密封进出口106的结构。但是,挡板108的开闭结构并不限定于此。挡板108还可设置于侧壁102的外侧或内侧。
挡板108包括挡板本体1081、挡板加热器1082以及隔热部件1083。
挡板本体1081形成挡板108的外形。挡板加热器1082设置于挡板本体1081内,向工艺腔100内的处理空间101传递热量。可通过将挡板加热器1082设置于挡板本体1081内来防止工序处理过程中挡板加热器1082被污染。与之不同地,在工序处理过程中不发生挡板加热器1082被污染的问题的情况下,挡板加热器1082还能够以向内侧,即,向处理空间101内露出的形态设置,而不是设置于挡板本体1081的内部。
挡板加热器1082设置有多个,以能够单独控制的方式设置。因此,通过可单独控制的多个挡板加热器1082防止挡板108的热损失引起的工艺腔内的温度不均。
上壁腔加热器1041及侧壁腔加热器1021可与挡板加热器1082一体能够向工艺腔100内提供均匀的温度分布。上壁腔加热器1041及侧壁腔加热器1021设置有多个,并被单独控制,由此,可使工艺腔100内部的温度更加均匀。
因此,可在具有均匀的温度分布的热环境内进行基板的工序处理,可在基板的全面积具有均匀的关键尺寸分布。
隔热部件1083设置于挡板加热器1082的外侧,通过挡板108阻隔所传递的热量。尤其,隔热部件1083可通过阻隔朝向外部的热损失来防止挡板108的温度变化。
在处理空间101内设置基板支撑单元200。基板支撑单元200包括可对基板进行加热的加热器214。
图3a为示出挡板处于关闭状态的基板处理装置的图,图3b为示出挡板处理开启状态的基板处理装置的图。
在图3a及图3b中,挡板108通过沿着上下方向驱动来开闭进出口106。具体地,挡板108通过朝向上方驱动来开放进出口106,通过朝向下方驱动来密封进出口106。
参照图3a,说明进出口106被挡板108关闭的状态的基板处理装置。
在挡板108设置有多个挡板加热器1082a、1082b、1082c,多个挡板加热器可被单独控制。第一挡板加热器1082a、第二挡板加热器1082b、第三挡板加热器1082c从上部朝向下部的方向依次设置于挡板本体1081内。第三挡板加热器1082c设置于与上壁腔加热器1041最接近的位置,第一挡板加热器1082a设置于与上壁腔加热器1041隔得最远的位置。在此情况下,在多个挡板加热器1082中,越配置于挡板108的下侧,则单独控制的挡板加热器的温度越高。
具体地,优选地,与上壁腔加热器1041隔得远的第一挡板加热器1082a的温度可被设置成高于与上壁腔加热器1041接近的第三挡板加热器1082c的温度。在第一挡板加热器1082a所在的挡板108的下部部分可存在外部气流引起的热损失。因此,当进行工序处理时,第一挡板加热器1082a的温度可被设置成高于第三挡板加热器1082c的温度。在第三挡板加热器1082c所在的挡板108的上部部分中,外部气流引起的热损失少,位于与上壁腔加热器1041接近的位置。因此,当进行工序处理时,第三挡板加热器1082c的温度可被设置成低于第一挡板加热器1082a的温度。位于第一挡板加热器1082a与第三挡板加热器1082c之间的第二挡板加热器1082b的温度可被设置成中间温度。
参照图3b说明进出口106处于开启状态的基板处理装置。
参照图3b,在通过开启挡板108来开放进出口106的情况下,位于一侧的空气幕形成部1022可沿着水平方向朝向位于另一侧的空气幕回收部1023形成空气幕1024。空气幕回收部1023用于回收空气幕1024。
在空气幕沿着作为从进出口的上部朝向下部的方向的垂直方向形成的情况下,当呈圆形板形态的基板进出时,沿着垂直方向形成的空气幕可被基板阻隔。若空气幕被阻隔,则气流可从基板的上部或下部中的一处流入。气流的流入可改变工艺腔100内的温度。
根据本发明,沿着作为从进出口106的左侧朝向右侧的方向或从右侧朝向左侧的方向的水平方向形成空气幕1024,当基板进出时,可使基板引起的空气幕的阻隔最小化。因此,当基板进出时,可有效防止气流向工艺腔100内的处理空间101流入。
本发明的基板处理装置包括上壁腔加热器、侧壁腔加热器以及挡板加热器,可向工艺腔内的处理空间提供均匀的温度分布。
Claims (18)
1.一种基板处理装置,其特征在于,包括:
工艺腔,具有处理空间,在一侧形成有用于使基板进出的进出口;
基板支撑单元,设置于上述处理空间内,用于支撑基板;
挡板,设置于上述进出口,用于开闭上述进出口;以及
多个挡板加热器,设置于上述挡板内,向上述工艺腔的内部传递热量。
2.根据权利要求1所述的基板处理装置,其特征在于,上述挡板加热器被单独控制。
3.根据权利要求2所述的基板处理装置,其特征在于,
上述挡板通过朝向上方驱动来开放上述进出口,通过朝向下方驱动来密封上述进出口,
在上述多个挡板加热器中,越配置于上述挡板的下侧,则单独控制的挡板加热器的温度越高。
4.根据权利要求1所述的基板处理装置,其特征在于,在上述挡板的外侧壁设置有用于阻隔上述挡板的热传递的隔热部件。
5.根据权利要求1所述的基板处理装置,其特征在于,在上述进出口设置有空气幕形成部及空气幕回收部,上述空气幕形成部形成用于防止外部气流流入的空气幕,上述空气幕回收部用于回收上述空气幕。
6.根据权利要求5所述的基板处理装置,其特征在于,上述空气幕形成部设置于上述进出口的左侧及右侧中的一侧,上述空气幕回收部设置于上述进出口的另一侧。
7.根据权利要求5所述的基板处理装置,其特征在于,上述空气幕沿着水平方向形成。
8.根据权利要求5所述的基板处理装置,其特征在于,上述空气幕在上述进出口开放的情况下形成。
9.根据权利要求1所述的基板处理装置,其特征在于,包括侧壁腔加热器,上述侧壁腔加热器设置于上述工艺腔的内侧侧壁,向上述工艺腔的内部传递热量。
10.根据权利要求1所述的基板处理装置,其特征在于,还包括上壁腔加热器,上述上壁腔加热器设置于上述工艺腔的内侧上壁,向上述工艺腔的内部传递热量。
11.根据权利要求1所述的基板处理装置,其特征在于,还包括:
侧壁腔加热器,设置于上述工艺腔的内侧侧壁,向上述工艺腔的内部传递热量;以及
上壁腔加热器,设置于上述工艺腔的内侧上壁,向上述工艺腔的内部传递热量。
12.根据权利要求11所述的基板处理装置,其特征在于,上述上壁腔加热器及上述侧壁腔加热器设置有多个,被单独控制。
13.根据权利要求11所述的基板处理装置,其特征在于,上述多个挡板加热器中的与上述上壁腔加热器隔得远的挡板加热器的温度被设置成高于上述多个挡板加热器中的与上述上壁腔加热器接近的挡板加热器的温度。
14.根据权利要求1所述的基板处理装置,其特征在于,上述多个挡板加热器从上部朝向下部的方向依次设置。
15.一种用于开闭工艺腔进出口的挡板,提供热环境,其特征在于,上述挡板在内部包括用于向工艺腔的内部传递热量的多个挡板加热器。
16.根据权利要求15所述的用于开闭工艺腔进出口的挡板,其特征在于,上述多个挡板加热器被单独控制。
17.根据权利要求16所述的用于开闭工艺腔进出口的挡板,其特征在于,上述多个挡板加热器从上部朝向下部的方向依次设置于上述挡板内。
18.根据权利要求17所述的用于开闭工艺腔进出口的挡板,其特征在于,
上述挡板通过朝向上方驱动来开放上述进出口,通过朝向下方驱动来密封上述进出口,
在上述多个挡板加热器中,越配置于上述挡板的下侧,则单独控制的挡板加热器的温度越高。
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