CN112305020A - Thermal diffusion coefficient measuring device and method - Google Patents
Thermal diffusion coefficient measuring device and method Download PDFInfo
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Abstract
The invention discloses a thermal diffusion coefficient measuring device and method. The device includes: the device comprises a semiconductor refrigerating piece TEC, an upper heating plate, a lower heating plate, a first constant temperature controller, a second constant temperature controller, a temperature control module, a first thermocouple, a second thermocouple, a data acquisition system and a computer; the constant temperature controller is used for keeping the heating plate at a constant temperature, the temperature control module is used for controlling the semiconductor refrigerating chip to generate temperature cosine waves with fixed frequency on one side, the temperature on the other side is kept unchanged, the sample is placed on the temperature change surface of the semiconductor refrigerating chip, and the temperature sensor and the data acquisition system are used for detecting, acquiring and analyzing temperature change data at each moment, so that the thermal diffusion coefficient is calculated. The measuring device has the characteristics of good structural compatibility, low power consumption, small size and the like, and the method provided by the invention has high calculation precision.
Description
Technical Field
The invention relates to the field of material thermophysical property measurement, in particular to a thermal diffusion coefficient measuring device and method.
Background
The composite material is generally composed of reinforcing fibers and resin, and in the curing process, the resin undergoes a curing reaction, and physical parameters thereof change. Resins and resin composites are commonly used in industry as structural members or adhesive coatings. The thermal diffusivity is a very important thermophysical parameter, and the heat generated by the electronic equipment during the use process can cause the temperature gradient to be too large, thereby causing the failure of components. It is therefore a significant task to determine the thermal diffusivity and to calculate the temperature gradient change during the curing of the resin.
The existing measuring devices for thermal diffusivity can be broadly classified into a measuring device based on a steady-state method and a measuring device based on an unsteady-state method.
Common measurement methods based on the steady-state method include a hot plate method measurement device, a coaxial cylinder method measurement device and the like. The hot plate method requires a large number of samples and generally requires an additional heat shielding structure, which results in a complicated structure and a large volume of the apparatus.
The existing common unsteady state measuring methods include a transient hot wire method, a pulse heat source method, a flash method, an infrared laser scattering method, a periodic heat source method and the like. In the transient hot wire method measuring device, the contact area between the probe and the material to be measured is small, so that the transient hot wire method measuring device is not suitable for measuring the loose materials; in the laser pulse method device, a laser generator is expensive, and the optical debugging process is complex; the measurement of the transparent material cannot be realized by a flash method and a laser reflection method; meanwhile, instruments used in the light scattering methods are expensive, complex to operate and have strict requirements on the surrounding environment, so that the research on the thermophysical properties of the resin material is greatly limited.
Disclosure of Invention
The invention aims to provide a thermal diffusion coefficient measuring device and a thermal diffusion coefficient measuring method.
In order to achieve the purpose, the invention provides the following scheme:
a thermal diffusivity measurement device comprising: the device comprises a semiconductor refrigerating piece TEC, an upper heating plate, a lower heating plate, a first constant temperature controller, a second constant temperature controller, a temperature control module, a first thermocouple, a second thermocouple, a data acquisition system and a computer;
the temperature control module is used for outputting power so that the temperature of the upper end face of the semiconductor refrigerating plate TEC changes in a cosine manner;
the first constant temperature controller is connected with the upper heating plate and used for controlling the upper heating plate to heat the upper end face of the resin sample, so that the upper end face of the resin sample is kept at a constant temperature;
the lower heating plate is arranged on the lower end face of the semiconductor refrigerating plate TEC; the second constant temperature controller is connected with the lower heating plate and is used for controlling the lower heating plate to heat the lower end face of the semiconductor refrigerating piece TEC so as to keep the lower end face of the semiconductor refrigerating piece TEC at a constant temperature;
the first thermocouple and the second thermocouple are respectively arranged on the lower surface and the middle section of the resin sample and are used for collecting the temperature of the lower surface and the temperature of the middle section of the resin sample;
the data acquisition system is connected with the first thermocouple and the second thermocouple and is used for acquiring the lower surface temperature and the middle section temperature of the resin sample;
and the computer is connected with the data acquisition system and is used for calculating the thermal diffusion coefficient of the resin sample according to the lower surface temperature and the middle section temperature of the resin sample.
Optionally, a first temperature sensor is arranged in the upper heating plate and used for detecting the temperature of the upper heating plate and feeding the detected temperature of the upper heating plate back to the first constant temperature controller, and the first constant temperature controller controls the upper heating plate according to the fed temperature of the upper heating plate.
Optionally, a second temperature sensor is arranged in the lower heating plate and used for detecting the temperature of the lower heating plate and feeding the detected temperature of the lower heating plate back to the second thermostatic controller, and the second thermostatic controller controls the lower heating plate according to the fed-back temperature of the lower heating plate.
Optionally, the first and second thermostats control the temperature of the upper and lower heating plates using PID regulation.
Optionally, a third temperature sensor is arranged on the upper end surface of the semiconductor refrigeration piece TEC, and the third temperature sensor is used for detecting the upper end surface temperature of the semiconductor refrigeration piece TEC and feeding back the detected upper end surface temperature of the semiconductor refrigeration piece TEC to the temperature control module, and the temperature control module outputs power according to the fed back upper end surface temperature of the semiconductor refrigeration piece TEC, so that the upper end surface temperature of the semiconductor refrigeration piece TEC is changed in a cosine manner.
Optionally, the computer is connected to the temperature control module through an RS232 port, and is configured to display the temperature of the upper end surface of the semiconductor cooling plate TEC.
A thermal diffusivity measuring method, which is applied to the thermal diffusivity measuring apparatus, the method comprising:
collecting the lower surface temperature and the middle section temperature of a resin sample; the variation trends of the lower surface temperature and the intermediate section temperature are changed in a cosine function mode;
determining a phase difference according to the lower surface temperature and the middle section temperature;
acquiring the thickness and cosine wave frequency of the resin sample;
and calculating the thermal diffusion coefficient of the resin sample according to the phase difference, the thickness and the cosine wave frequency.
Optionally, the calculation formula of the thermal diffusivity is as follows:
wherein alpha is a thermal diffusion coefficient, phi is a phase difference, f is a cosine wave frequency, and L is a thickness of the resin sample
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
(1) in the invention, the thermocouple sheets placed at the central positions of the lower surface and the middle section of the sample are used for collecting the temperature data, the ultra-small thin-surface K-type thermocouple sheet is subjected to secondary processing, the size is 0.15 multiplied by 0.25mm, the disturbance of the measurement process to the device is extremely small, and the precision and the reliability of the measurement result are improved;
(2) compared with a very professional and expensive instrument used in the measurement process of the light scattering method and having strict requirements on the surrounding environment, the cost of the instrument is greatly reduced, the requirements on the surrounding severe experimental environment are reduced, and the cost and the complexity of a measurement system are reduced;
(3) aiming at the measurement of the thermophysical parameters of the composite material in the field of aerospace, the measuring device disclosed by the invention has the characteristics of good structural compatibility, low power consumption, small volume and the like. In addition, the sample tested in the device is resin, but the device can also measure the thermal diffusivity of other solid substances, and has wide application range.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic diagram of a measurement process of a thermal diffusivity measuring apparatus according to an embodiment of the present invention;
FIG. 2 is a cosine temperature wave curve measured at the center of the lower surface and the middle cross-section of the resin sample block according to the present invention.
FIG. 3 is a graph of the thermal diffusivity of resin over time calculated by the present invention for different isothermal curing processes.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a thermal diffusion coefficient measuring device and a thermal diffusion coefficient measuring method.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1, the thermal diffusivity measuring apparatus includes: semiconductor refrigeration piece TEC, go up hot plate, lower hot plate, first constant temperature controller, second constant temperature controller, temperature control module, first thermocouple, second thermocouple and data acquisition system. The temperature control module is a TCM-M115 digital temperature control module, the first constant temperature controller and the second constant temperature controller are Anthone digital constant temperature controllers, and the data acquisition system is a DEWESOFTX3 data acquisition system. The constant temperature controller is used for keeping the heating plate at a constant temperature, the temperature control module is used for controlling the semiconductor refrigerating chip to generate temperature cosine waves with fixed frequency on one side, the temperature on the other side is kept unchanged, the sample is placed on the temperature change surface of the semiconductor refrigerating chip, and the temperature change data at each moment is detected, collected and analyzed through the temperature sensor and the data acquisition system, so that the thermal diffusion coefficient is calculated.
The output power is controlled by the temperature control module, so that the temperature of the upper end face of the semiconductor refrigerating sheet changes in a cosine manner. The semiconductor refrigeration chip upper end face is provided with a third temperature sensor which feeds back the temperature of the upper surface to the temperature control module, and the temperature control module controls a program and output power according to the feedback temperature and the cosine temperature, so that the temperature of the upper surface is changed in a cosine manner. The temperature control module is connected with a computer through an RS232 port, and the temperature of the upper end face of the semiconductor refrigerating sheet is displayed in calculation.
The temperature control module mainly ensures that the temperature output of one end face of the semiconductor refrigerating sheet is cosine wave,the other end face is at a constant temperature, the period T of the generated cosine wave is 2min, and the frequency f is 1/T, which determines the accuracy of the finally calculated thermal diffusion coefficient. Meanwhile, in order to ensure the uniformity of the temperature, 9 semiconductor chilling plates are laid in a 3 × 3 manner and wrapped by copper foil. The output power is controlled by the temperature control module, so that the temperature of the upper end surface of the semiconductor refrigerating sheet is cosine changed A0+ Acos (2 pi ft), the heating power is 152W, the maximum temperature difference capable of being generated is 69 ℃, and the power supply input is 0-15.2V and 0-10A.
The heating plate mainly ensures that the upper end face and the lower end face of the sample are at a constant temperature, so that the resin can be subjected to a curing reaction at the constant temperature, and the whole experimental process can be seen as an isothermal curing process.
The resin sample is arranged on the upper end face of the semiconductor refrigeration plate TEC, the upper heating plate is arranged on the upper end face of the resin sample, and the first constant temperature controller is connected with the upper heating plate and used for controlling the upper heating plate to heat the upper end face of the resin sample, so that the upper end face of the resin sample is kept at a constant temperature. The upper heating plate is used for keeping the temperature constant to a value through a digital constant temperature controller, so that the upper end surface of the sample is kept at the constant temperature. And a first temperature sensor is arranged in the upper heating plate and used for detecting the temperature of the upper heating plate, and feeding the detected temperature of the upper heating plate back to the first constant temperature controller, and the first constant temperature controller controls the upper heating plate according to the fed temperature of the upper heating plate. When the temperature is lower than the designated temperature, the controller is electrified to heat the heating plate, and when the temperature is higher than the designated temperature, the controller is powered off to cool the heating plate.
The lower heating plate is arranged on the lower end face of the semiconductor refrigerating plate TEC; the second constant temperature controller is connected with the lower heating plate and used for controlling the lower heating plate to heat the lower end face of the semiconductor refrigerating piece TEC, so that the lower end face of the semiconductor refrigerating piece TEC keeps constant temperature. The lower heating plate is used for stabilizing the temperature to a value through a digital constant temperature controller and providing a base temperature for the lower end face of the semiconductor refrigeration plate TEC. And a second temperature sensor is arranged in the lower heating plate and used for detecting the temperature of the lower heating plate and feeding the detected temperature of the lower heating plate back to the second constant temperature controller, and the second constant temperature controller controls the lower heating plate according to the fed temperature of the lower heating plate. When the temperature is lower than the designated temperature, the controller is electrified to heat the heating plate, and when the temperature is higher than the designated temperature, the controller is powered off to cool the heating plate.
As shown in fig. 1, the upper and lower heating plates are connected to a thermostat controller through a connecting wire, and the thermostat controller controls the temperature of the heating plates by using a PID adjusting method. The switch of the heating plate circuit can be controlled by a group of relay controllers, meanwhile, the temperature sensors arranged on the upper end faces of the upper heating plate and the lower heating plate are connected to the digital constant temperature controller, and the temperature of the heating plates can be displayed on the liquid crystal panel of the digital constant temperature controller in real time. The specific implementation steps are as follows: the lower heating plate is used for keeping the temperature constant to A through a digital constant temperature controller0(A080 ℃, 90 ℃, 100 ℃ in different isothermal solidification experiments, the same below), the power of the heating plate is 600W, and the step aims to provide the base temperature A for the lower end face of the TEC of the semiconductor refrigerating sheet0DEG C. A temperature sensor is arranged in the heating plate, the temperature of the heating plate is fed back to the thermostatic controller, and when the temperature is lower than A0When the temperature is higher than A, the controller is electrified to heat the heating plate0And when the temperature of the heating plate is higher than the set temperature, the controller is powered off to cool the heating plate.
The first thermocouple and the second thermocouple are respectively arranged on the lower surface and the middle section of the resin sample and are used for collecting the temperature of the lower surface and the temperature of the middle section of the resin sample. The first thermocouple and the second thermocouple are ultra-small thin-surface K-type thermocouples.
The data acquisition system is connected with the first thermocouple and the second thermocouple and is used for acquiring the lower surface temperature and the middle section temperature of the resin sample.
And the computer is connected with the data acquisition system and is used for calculating the thermal diffusion coefficient of the resin sample according to the lower surface temperature and the middle section temperature of the resin sample.
The use method of the device comprises the following steps:
(1) layout experiment circuit
Firstly confirming that the power lines of the upper heating plate and the lower heating plate and the thermocouple wires are connected with the digital thermostatic controller without errors, then connecting the temperature control module with a control computer, then connecting thermocouple sheets placed at the central positions of the lower surface and the middle section of the sample to a data acquisition system through a patch cord, after ensuring that the circuit connection is correct, opening the power supply of the whole case, then opening a relay switch of the thermostatic controller, preheating the upper heating plate and the lower heating plate according to the set temperature, and after confirming that the heating function of the upper heating plate and the lower heating plate is correct through the temperature displayed on a liquid crystal display screen of the digital thermostatic controller in the preheating process, closing the relay switch and the power supply of the case for standby.
(2) Filling and fixing of the resin to be tested
(3) Setting heating plate temperature and cosine wave frequency
The experimental procedure can be regarded as an isothermal curing process of the resin, such as: the curing experiment at 80 ℃ is called as 80 ℃ isothermal curing experiment, and in order to research the change condition of the thermal diffusion coefficient under the isothermal curing experiments at different temperatures, a group of isothermal curing experiments are respectively carried out at 80 ℃, 90 ℃ and 100 ℃. When isothermal solidification experiments at different temperatures are carried out, the upper heating plate and the lower heating plate are set to be at specified temperatures through a digital constant temperature controller, and meanwhile, the temperature of the cosine wave is controlled to be 80 ℃ and the frequency f is controlled to be 1/T through a temperature control module on a calculator.
(4) Data acquisition and data processing
And after the temperature data are stable, starting data acquisition on software. The data acquisition system acquires two temperature change curves of two points at the central positions of the lower surface and the middle section of the sample, the two temperature change curves are subject to cosine change due to the influence of cosine change temperature waves output by the semiconductor refrigerating sheet, a phase difference exists, and the thermal diffusion coefficient of the material can be obtained after the phase difference data is processed.
The invention also provides a thermal diffusion coefficient measuring method, which comprises the following steps:
step 101: collecting the lower surface temperature and the middle section temperature of a resin sample; the change trends of the lower surface temperature and the middle section temperature are changed in a cosine function mode.
Step 102: and determining the phase difference according to the lower surface temperature and the middle section temperature.
Step 103: and acquiring the thickness and cosine wave frequency of the resin sample.
Step 104: and calculating the thermal diffusion coefficient of the resin sample according to the phase difference, the thickness and the cosine wave frequency. The calculation formula of the thermal diffusion coefficient is as follows:
wherein α is a thermal diffusion coefficient, φ is a phase difference, f is a cosine wave frequency, and L is a thickness of the resin sample.
The following detailed description of each part:
data measurement
The K-type thermocouple slice with the ultra-small thin surface is placed at the center positions of the lower surface and the middle section of the sample, and the phase difference of two point temperatures is obtained by collecting the temperature data of the K-type thermocouple slice, so that the thermal diffusion coefficient can be obtained. The thermocouple slice has the size of 0.15 multiplied by 0.25mm and the temperature measuring range of minus 20-200 ℃.
Data acquisition
And after the temperature data are stabilized, starting data acquisition on DEWESOFT software, and displaying and recording the temperature data of two points acquired by the thermocouples arranged at the central positions of the lower surface and the middle section of the sample on a computer in real time.
The data acquisition process comprises the following specific steps:
1. preparing an uncured resin sample to be tested, and placing the uncured resin between the heating plate and the semiconductor chip;
2. connecting the temperature control module with a control computer, and preparing to adjust the frequency of the output sine wave signal on computer software; connecting the thermocouple sheets placed at the lower surface of the sample and the center position of the middle section to a data acquisition system through a patch cord to prepare for acquiring temperature data of the two surfaces; turning on a power switch of the thermostatic controller, heating the upper heating plate and the lower heating plate according to a set temperature, keeping the temperatures of the upper heating plate and the lower heating plate consistent, and controlling the temperature control module to output cosine-changed temperature waves through computer software;
3. after a period of time, the resin begins to solidify, and the DEWESOFT software carried by the data acquisition system sets the sampling frequency and begins to record the temperature change data of the lower surface of the sample and the central position of the middle section in the whole solidification process.
Referring to fig. 2, the cosine change image of the temperature acquired by the data acquisition system generates a cosine wave with a period T of 2min and a frequency f of 1/T, which determines the accuracy of the finally calculated thermal diffusion coefficient. Output in txt format in DEWESOFT software and data processing in data processing software can be fitted to
Is an independent variable, phi is a function of a dependent variable, from the image slope
The diffusion coefficient alpha can be obtained.
Data processing
The data acquisition system acquires two temperature change curves of two points at the central positions of the lower surface and the middle section of the sample, and the two temperature change curves are subjected to cosine change due to the influence of cosine change temperature waves output by the semiconductor refrigerating sheet and have a phase difference phi.
The data processing process comprises the following specific steps:
1. the data collected by the data collection system are two temperature change curves at the central positions of the lower surface and the middle section of the sample, the two collected temperature curves are stored as txt file formats by using DEWESOFT software and exported, and the curves under each cosine wave temperature cycle in the selected moment are processed by using data processing software to obtain a phase difference change value and a phase difference change curve in the whole curing process;
2. the temperature change of the resin sample during the whole curing process can be regarded as one-dimensional, the one-dimensional unsteady heat conduction equation of the cylindrical resin sample is shown as (1), and the solution conditions comprise boundary conditions (2) and (3) and initial condition (4).
x＝0,T(0,t)＝A0+Acos(2πft) (2)
Solving by a separation variable method, and resolving the temperature at any position as follows:
wherein the resin thickness L is 4mm, the cosine temperature wave amplitude A is 5 ℃, and the base temperature A is provided by an upper heating plate and a lower heating plate0The temperature in different isothermal solidification experiments is respectively 80 ℃, 90 ℃ and 100 ℃.
Analysis shows that the phase difference of the cosine temperature wave is linear and proportional to the distance x (sample thickness. therefore, given a fixed length L (i.e., resin thickness), the phase difference can be obtained
The relationship thereto:
the relationship between the thermal diffusion coefficient and the phase difference, the cosine temperature wave frequency and the sample thickness L is as follows:
3. after 8 hours from the start of heating, the resin sample block was considered to be cured, and the time point at the start of one cosine wave was selected as the reference, which was taken as the initial time of the reaction. Outputting and storing the data of the period of each cosine wave cycle after the initial reaction moment in a txt format, and importing the data into relevant software for data processing to obtain a phase difference change curve phi (t) in each cycle in the whole curing process; taking phi as an independent variable,
the diffusion coefficient value can be calculated from the slope of the image as a dependent variable, see fig. 3.
In summary, the thermal diffusivity can be calculated by measuring the phase difference phi at a certain distance and frequency. It is noted that measurements are possible throughout the curing process, and the phase difference is not affected by the heat of the curing reaction.
The thermal diffusivity of the resin during curing is a bivariate function of the temperature and the curing degree. Carrying out isothermal curing experiments at different temperatures by adopting control variables to obtain the change of the thermal diffusion coefficient along with the curing degree at different temperatures so as to obtain the change rule of the thermal diffusion coefficient along with the temperature in the curing process, and finally constructing a double-parameter model of the thermal diffusion coefficient relative to the temperature and the curing degree by combining with an isothermal DSC experiment; in the prior art, the thermal diffusivity of the resin is measured after the curing is finished, and the real-time change of the thermal diffusivity in the whole curing process of the resin cannot be obtained.
The output power is controlled by the temperature control module, so that the temperature of the upper end face of the semiconductor refrigerating sheet is changed in a cosine mode, the frequency of change of cosine temperature waves is adjustable, and the frequency can be changed within a very small frequency range, so that the precision of the thermal diffusion coefficient measured in each period can be improved; in addition, the data acquisition system can acquire a large amount of data during measurement, has very excellent statistical advantages, reduces accidental errors and obviously improves the precision.
The measuring method has the characteristics of simple and efficient measuring process, simple data processing process and the like. In addition, the method can also measure the thermal diffusion coefficient of other solid substances, and has wide application range.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (8)
1. A thermal diffusivity measurement device, comprising: the device comprises a semiconductor refrigerating piece TEC, an upper heating plate, a lower heating plate, a first constant temperature controller, a second constant temperature controller, a temperature control module, a first thermocouple, a second thermocouple, a data acquisition system and a computer;
the temperature control module is used for outputting power so that the temperature of the upper end face of the semiconductor refrigerating plate TEC changes in a cosine manner;
the first constant temperature controller is connected with the upper heating plate and used for controlling the upper heating plate to heat the upper end face of the resin sample, so that the upper end face of the resin sample is kept at a constant temperature;
the lower heating plate is arranged on the lower end face of the semiconductor refrigerating plate TEC; the second constant temperature controller is connected with the lower heating plate and is used for controlling the lower heating plate to heat the lower end face of the semiconductor refrigerating piece TEC so as to keep the lower end face of the semiconductor refrigerating piece TEC at a constant temperature;
the first thermocouple and the second thermocouple are respectively arranged on the lower surface and the middle section of the resin sample and are used for collecting the temperature of the lower surface and the temperature of the middle section of the resin sample;
the data acquisition system is connected with the first thermocouple and the second thermocouple and is used for acquiring the lower surface temperature and the middle section temperature of the resin sample;
and the computer is connected with the data acquisition system and is used for calculating the thermal diffusion coefficient of the resin sample according to the lower surface temperature and the middle section temperature of the resin sample.
2. The apparatus according to claim 1, wherein a first temperature sensor is provided in the upper heating plate to detect a temperature of the upper heating plate and feed back the detected temperature of the upper heating plate to the first thermostat controller, and the first thermostat controller controls the upper heating plate according to the fed back temperature of the upper heating plate.
3. The apparatus according to claim 1, wherein a second temperature sensor is provided in the lower heating plate to detect a temperature of the lower heating plate and feed back the detected temperature of the lower heating plate to the second thermostat controller, and the second thermostat controller controls the lower heating plate according to the fed-back temperature of the lower heating plate.
4. The apparatus of claim 1, wherein the first and second thermostatically controlled devices control the temperature of the upper and lower heating plates using a PID regulation method.
5. The thermal diffusivity measuring device of claim 1, wherein a third temperature sensor is disposed on the upper end surface of the semiconductor refrigeration chip TEC, the third temperature sensor is configured to detect the temperature of the upper end surface of the semiconductor refrigeration chip TEC and feed back the detected temperature of the upper end surface of the semiconductor refrigeration chip TEC to the temperature control module, and the temperature control module outputs power according to the fed back temperature of the upper end surface of the semiconductor refrigeration chip TEC, so that the temperature of the upper end surface of the semiconductor refrigeration chip TEC changes in a cosine manner.
6. The device for measuring the thermal diffusivity of claim 1, wherein the computer is connected with the temperature control module through an RS232 port and is used for displaying the temperature of the upper end face of the semiconductor chilling plate TEC.
7. A thermal diffusivity measuring method applied to the thermal diffusivity measuring apparatus of any one of claims 1 to 6, the method comprising:
collecting the lower surface temperature and the middle section temperature of a resin sample; the variation trends of the lower surface temperature and the intermediate section temperature are changed in a cosine function mode;
determining a phase difference according to the lower surface temperature and the middle section temperature;
acquiring the thickness and cosine wave frequency of the resin sample;
and calculating the thermal diffusion coefficient of the resin sample according to the phase difference, the thickness and the cosine wave frequency.
8. The thermal diffusivity measuring method of claim 7, wherein the thermal diffusivity is calculated as follows:
wherein α is a thermal diffusion coefficient, φ is a phase difference, f is a cosine wave frequency, and L is a thickness of the resin sample.
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| CN113740375A (en) * | 2021-09-08 | 2021-12-03 | 西北工业大学 | Device and method for measuring thermal expansion coefficient and curing shrinkage of resin |
| WO2023048161A1 (en) * | 2021-09-21 | 2023-03-30 | 国立大学法人東海国立大学機構 | Interface information identification device, interface information identification method, program, internal information identification device, and optical heating device |
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