CN112295492A - Target and semiconductor device processing equipment applying same - Google Patents
Target and semiconductor device processing equipment applying same Download PDFInfo
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- CN112295492A CN112295492A CN202011281403.XA CN202011281403A CN112295492A CN 112295492 A CN112295492 A CN 112295492A CN 202011281403 A CN202011281403 A CN 202011281403A CN 112295492 A CN112295492 A CN 112295492A
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- aluminum
- copper
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000002156 mixing Methods 0.000 claims abstract description 173
- 239000013077 target material Substances 0.000 claims abstract description 31
- 239000000843 powder Substances 0.000 claims description 110
- 229910045601 alloy Inorganic materials 0.000 claims description 74
- 239000000956 alloy Substances 0.000 claims description 74
- -1 chromium-aluminum-silicon Chemical compound 0.000 claims description 74
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 72
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 72
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 32
- 239000011812 mixed powder Substances 0.000 claims description 29
- 239000011777 magnesium Substances 0.000 claims description 22
- 238000007599 discharging Methods 0.000 claims description 17
- 238000000227 grinding Methods 0.000 claims description 15
- 229910052749 magnesium Inorganic materials 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 10
- 238000005096 rolling process Methods 0.000 claims description 10
- 238000005477 sputtering target Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims 1
- 235000017491 Bambusa tulda Nutrition 0.000 claims 1
- 241001330002 Bambuseae Species 0.000 claims 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims 1
- 239000011425 bamboo Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 6
- 230000000712 assembly Effects 0.000 abstract description 5
- 238000000429 assembly Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F33/00—Other mixers; Mixing plants; Combinations of mixers
- B01F33/80—Mixing plants; Combinations of mixers
- B01F33/81—Combinations of similar mixers, e.g. with rotary stirring devices in two or more receptacles
- B01F33/811—Combinations of similar mixers, e.g. with rotary stirring devices in two or more receptacles in two or more consecutive, i.e. successive, mixing receptacles or being consecutively arranged
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/71—Feed mechanisms
-
- B22F1/0003—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention discloses a target material and semiconductor device processing equipment using the same, and the technical scheme is as follows: the mixing device comprises a mixing cylinder, wherein a mixing mechanism is arranged in the mixing cylinder, and the mixing mechanism extends out of the mixing cylinder; the mixing mechanism comprises a motor, the motor is fixedly arranged at the top of the mixing barrel, the motor is fixedly connected with a rotating rod through an output shaft, the rotating rod is arranged at the top of the mixing barrel and extends into the mixing barrel, a plurality of mixing assemblies are fixedly arranged in the mixing barrel, each mixing assembly comprises a fixing box, and the fixing boxes are fixedly arranged in the mixing barrel, so that the mixing mechanism has the beneficial effects that: through mixing mechanism's design, can carry out a lot of through a plurality of mixing subassemblies and mix the raw materials, when mixing, the new raw materials that adds at every turn mixes moreover, mixes many times carrying out through a plurality of mixing subassemblies, the abundant mixed effect of having guaranteed the raw materials.
Description
Technical Field
The invention relates to the technical field of targets, in particular to a target and semiconductor device processing equipment using the same.
Background
The target material is a target material bombarded by high-speed charged energy particles, and is used in a high-energy laser weapon, and when lasers with different power densities, different output waveforms and different wavelengths interact with different target materials, different killing and destruction effects can be generated, for example: the evaporation magnetron sputtering coating is to heat evaporation coating, aluminum film and the like, and change different targets (such as aluminum, copper, stainless steel, titanium, nickel targets and the like) to obtain different film systems (such as superhard, wear-resistant and anticorrosive alloy films and the like).
The prior art has the following defects: the target in the prior art needs to mix the raw materials of the target in the manufacturing process, but the existing mixing device has poor mixing effect on the raw materials when in use, so that different raw materials are still excessively concentrated or dispersed after being mixed, the production quality of the target is seriously influenced, and the use of a user is inconvenient.
Therefore, it is necessary to invent a target and a semiconductor device processing apparatus using the same.
Disclosure of Invention
Therefore, the invention provides a target material and semiconductor device processing equipment applying the target material, through the design of a mixing mechanism, raw materials can be mixed for many times through a plurality of mixing assemblies, and in the mixing process, a new raw material added each time is mixed, and the raw materials are mixed for many times through the plurality of mixing assemblies, so that the mixing effect of the raw materials is fully ensured, and the problems that the mixing effect of the raw materials is not good, different raw materials are still excessively concentrated or dispersed after being mixed, and the production quality of the target material is seriously influenced are solved.
In order to achieve the above purpose, the invention provides the following technical scheme: a target and semiconductor device processing equipment applying the target comprise a mixing cylinder, wherein a mixing mechanism is arranged inside the mixing cylinder, and the mixing mechanism extends out of the mixing cylinder;
the mixing mechanism comprises a motor, the motor is fixedly arranged at the top of the mixing barrel, the motor is fixedly connected with a rotating rod through an output shaft, the rotating rod is arranged at the top of the mixing barrel and extends into the mixing barrel, and a plurality of mixing components are fixedly arranged in the mixing barrel;
the mixing assembly comprises a fixed box, the fixed box is fixedly arranged in the mixing barrel, the rotating rod penetrates through the fixed box and is connected with the fixed box through a sealing bearing, a feed inlet at the top of the fixed box, a plurality of mixing plates are fixedly arranged outside the rotating rod and are all arranged in the fixed box, discharge outlets are respectively formed in two sides of the bottom of the fixed box, telescopic rods are fixedly arranged on two sides of an inner cavity of the mixing barrel and are arranged at the bottom of the fixed box, springs are fixedly arranged outside the two telescopic rods, transverse plates are fixedly arranged on one sides of the telescopic rods, the tops of the transverse plates are in contact with the bottom of the fixed box, special-shaped wheels are fixedly arranged outside the rotating rod, and two sides of the special-shaped wheels are respectively in;
buffer gear still includes auxiliary assembly, auxiliary assembly includes the rotor plate, the rotor plate is fixed to be located the dwang outside, the mixing drum inner chamber top is located to the rotor plate, two logical grooves have been seted up on the rotor plate.
Preferably, the auxiliary assembly still includes two feeder hoppers, two the motor both sides are located respectively to the feeder hopper, two inside the feeder hopper all extended into the mixing drum, two logical groove top is located respectively to the feeder hopper.
Preferably, the bottom of the rotating rod is connected with the bottom of the inner cavity of the mixing barrel through a bearing.
Preferably, the cross plate has an L-shaped cross section.
Preferably, the bottom of the mixing cylinder is fixedly provided with two discharging hoppers which are respectively arranged at two sides of the bottom of the mixing cylinder.
Preferably, the bottom of each of the two discharging hoppers is fixedly provided with a connecting pipe.
Preferably, both sides of the bottom of the mixing cylinder are fixedly provided with supporting plates.
Preferably, the target material comprises a chromium-aluminum-silicon ingot, a copper-nickel alloy, metal magnesium and a tin alloy, wherein the components in parts by mass are as follows:
casting a chromium-aluminum-silicon ingot: 20-25 parts;
copper-nickel alloy: 10-15 parts;
metal magnesium: 5-8 parts;
tin alloy: 3-6 parts.
Preferably, the target rolling method comprises the following specific steps:
s1 cleaning: before rolling, cleaning the surfaces of chromium-aluminum-silicon cast ingots, copper-nickel alloys, metal magnesium and tin alloys by alcohol;
s2 grinding: grinding the cleaned chromium-aluminum-silicon ingot, copper-nickel alloy, metal magnesium and tin alloy by a grinding mill to obtain powder;
s3 preparing powder: 20-25 parts of chromium-aluminum-silicon ingot powder is placed in a feeding hopper on the left side of the top of a mixing cylinder, 10-15 parts of copper-nickel alloy powder is placed in a feeding hopper on the right side of the mixing cylinder, a motor is started, the motor works to drive a rotating rod to rotate, the rotating rod rotates to drive a rotating plate to rotate, the rotating plate rotates to enable the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder in the two feeding hoppers to enter a fixed box through a through groove and a feeding hole, the rotating rod rotates and also drives a mixing plate to rotate, the mixing plate rotates to mix the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder in the fixed box, the rotating rod rotates and also drives a special-shaped wheel to rotate, the special-shaped wheel rotates and drives two transverse plates to extrude, so that a telescopic rod is shortened, a spring outside the telescopic, enabling the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder in the fixed box to enter the next fixed box from the discharge port, and discharging the mixed powder of the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder through the two discharge hoppers after three times of mixing;
and (S4) powder mixing: then the powder mixed by the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder is placed into a feed hopper on the left side of the top of the mixing cylinder, 5-8 parts of magnesium metal is placed into the feed hopper on the right side of the top of the mixing cylinder, then starting a motor, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy through a mixing mechanism, discharging the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy from two discharging hoppers, placing the powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy into a feeding hole on the right side of the top of a mixing cylinder, placing 3-6 parts of tin alloy powder into the feeding hole on the right side of the top of the mixing cylinder, then starting a motor, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy with the tin alloy powder through a mixing mechanism, and discharging the mixed powder of the chromium-aluminum-silicon ingot, the copper-nickel alloy powder, the metal magnesium powder and the tin alloy powder from a discharge hopper;
s5, placing into a mold: placing the mixed powder in a die;
s6, high-temperature hot pressing: uniaxially pressing at a pressure of 600kgf/cm 2 to 1500kgf/cm 2 by a hydraulic press while sintering by high temperature;
s7, forming and cooling: and taking out the formed sputtering target material and the mold, and cooling the sputtering target material and the mold by a fan.
The invention has the beneficial effects that:
1. according to the invention, through the design of the mixing mechanism, raw materials can be mixed for many times through the plurality of mixing assemblies, and in the mixing process, a new raw material added each time is mixed, and the raw materials are mixed for many times through the plurality of mixing assemblies, so that the mixing effect of the raw materials is fully ensured, and meanwhile, through the design of the structures such as the rotating plate, the transverse plate and the like, the feeding hopper and the discharging hopper are indirectly discharged during feeding and discharging, and the problem of uneven mixing of the raw materials caused by over-high speed during feeding or discharging is avoided;
2. the invention makes the target material extremely hard and brittle and corrosion resistant through the design of chromium metal, and makes the target material light in weight, good in heat conduction performance, and also has certain strength, hardness and corrosion resistance through the design of aluminum metal and silicon metal.
Drawings
FIG. 1 is a schematic view of the overall structure provided by the present invention;
FIG. 2 is a perspective view of a rotating plate provided by the present invention;
FIG. 3 is a perspective view of a contour wheel provided in the present invention;
in the figure: 1 mixing drum, 2 motors, 3 rotating rods, 4 fixed boxes, 5 feed inlets, 6 mixing plates, 7 discharge outlets, 8 telescopic rods, 9 springs, 10 transverse plates, 11 special-shaped wheels, 12 rotating plates, 13 through grooves, 14 feed hoppers, 15 discharge hoppers, 16 connecting pipes and 17 supporting plates.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Embodiment 1, referring to fig. 1 to 3, a target semiconductor device processing apparatus according to the present invention includes a mixing cylinder 1, wherein a mixing mechanism is disposed inside the mixing cylinder 1, and the mixing mechanism extends out of the mixing cylinder 1;
the mixing mechanism comprises a motor 2, the motor 2 is fixedly arranged at the top of the mixing barrel 1, the motor 2 is fixedly connected with a rotating rod 3 through an output shaft, the rotating rod 3 is arranged at the top of the mixing barrel 1 and extends into the mixing barrel 1, and a plurality of mixing components are fixedly arranged in the mixing barrel 1;
the mixing assembly comprises a fixed box 4, the fixed box 4 is fixedly arranged inside a mixing drum 1, a rotating rod 3 penetrates through the fixed box 4 and is connected with the fixed box 4 through a sealing bearing, a feed inlet 5 is formed in the top of the fixed box 4, a plurality of mixing plates 6 are fixedly arranged outside the rotating rod 3, the plurality of mixing plates 6 are arranged inside the fixed box 4, discharge ports 7 are formed in two sides of the bottom of the fixed box 4, telescopic rods 8 are fixedly arranged on two sides of an inner cavity of the mixing drum 1, the telescopic rods 8 are arranged at the bottom of the fixed box 4, springs 9 are fixedly arranged outside the two telescopic rods 8, a transverse plate 10 is fixedly arranged on one side of each telescopic rod 8, the top of the transverse plate 10 is contacted with the bottom of the fixed box 4, special-shaped wheels 11 are fixedly arranged outside the rotating rod 3, and two sides of each special;
buffer gear still includes auxiliary assembly, auxiliary assembly includes rotor plate 12, rotor plate 12 is fixed to be located 3 outsides of dwang, 1 inner chamber tops of mixing drum are located to rotor plate 12, two logical grooves 13 have been seted up on rotor plate 12.
Further, the auxiliary assembly still includes two feeder hoppers 14, two 2 both sides of motor, two are located respectively to feeder hopper 14 inside feed hopper 14 all extends into mixing drum 1, two logical groove 13 tops are located respectively to feeder hopper 14.
Further, the bottom of the rotating rod 3 is connected with the bottom of the inner cavity of the mixing cylinder 1 through a bearing.
Further, the cross plate 10 has an L-shaped cross section.
Further, two discharge hoppers 15 are fixedly arranged at the bottom of the mixing drum 1, and the two discharge hoppers 15 are respectively arranged at two sides of the bottom of the mixing drum 1.
Further, the bottom of each of the two discharging hoppers 15 is fixedly provided with a connecting pipe 16.
Furthermore, both sides of the bottom of the mixing cylinder 1 are fixedly provided with supporting plates 17.
A target comprises a chromium-aluminum-silicon ingot, a copper-nickel alloy, metal magnesium and a tin alloy, wherein the target comprises the following components in parts by weight:
casting a chromium-aluminum-silicon ingot: 20 parts of (1);
copper-nickel alloy: 10 parts of (A);
metal magnesium: 5 parts of a mixture;
tin alloy: and 3 parts.
Further, the rolling method of the target comprises the following specific steps:
s1 cleaning: before rolling, the surfaces of the chromium-aluminum-silicon cast ingot, the copper-nickel alloy, the metal magnesium and the tin alloy are cleaned by alcohol.
S2 grinding: and grinding the cleaned chromium-aluminum-silicon ingot, copper-nickel alloy, metal magnesium and tin alloy by a grinding mill to obtain powder.
S3 preparing powder: 20 parts of chromium-aluminum-silicon ingot powder are placed in a feed hopper 14 on the left side of the top of a mixing cylinder 1, 10 parts of copper-nickel alloy powder are placed in a feed hopper 14 on the right side of the mixing cylinder 1, a motor 2 is started, the motor 2 works to drive a rotating rod 3 to rotate, the rotating rod 3 rotates to drive a rotating plate 12 to rotate, the rotating plate 12 rotates to enable the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder inside the two feed hoppers 14 to enter a fixed box 4 through a through groove 13 and a feed inlet 5, the rotating rod 3 rotates and simultaneously drives a mixing plate 6 to rotate, the mixing plate 6 rotates to mix the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder inside the fixed box 4, the rotating rod 3 rotates and simultaneously drives a special-shaped wheel 11 to rotate, the special-shaped wheel 11 rotates and drives to extrude two transverse plates 10, so that a telescopic rod 8 is shortened, meanwhile, the transverse plate 10 can be pushed to one side, so that chromium-aluminum-silicon ingot powder and copper-nickel alloy powder in the fixing box 4 can enter the next fixing box 4 from the discharge port 7, and after three times of mixing, the powder formed by mixing the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder can be discharged through the two discharge hoppers 15.
And (S4) powder mixing: then putting the mixed powder of the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder into a feed hopper 14 on the left side of the top of a mixing cylinder 1, putting 5 parts of metal magnesium into the feed hopper 14 on the right side of the top of the mixing cylinder 1, then starting a motor 2, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy through a mixing mechanism, discharging the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy from two discharge hoppers 15, then putting 3 parts of tin alloy powder into a feed inlet 5 on the right side of the top of the mixing cylinder 1, then starting the motor 2, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy through the mixing mechanism, and mixing the mixed powder of the chromium-aluminum-silicon ingot powder, the copper-nickel alloy powder, the mixed chromium-aluminum-silicon ingot powder, the copper-nickel alloy powder, Magnesium metal powder and tin alloy powder are discharged from the discharge hopper 15.
S5, placing into a mold: the mixed powder is placed inside a mold.
S6, high-temperature hot pressing: uniaxially pressed by a hydraulic press at a pressure of 600kgf/cm 2 while being sintered by a high temperature.
S7, forming and cooling: and taking out the formed sputtering target material and the mold, and cooling the sputtering target material and the mold by a fan.
In embodiment 2, the target and the semiconductor device processing equipment using the target provided by the invention comprise a chromium-aluminum-silicon ingot, a copper-nickel alloy, magnesium metal and a tin alloy, wherein the target comprises the following components in parts by weight:
casting a chromium-aluminum-silicon ingot: 22 parts of (A);
copper-nickel alloy: 12 parts of (1);
metal magnesium: 6 parts of (1);
tin alloy: 4 parts.
Further, the rolling method of the target comprises the following specific steps:
s1 cleaning: before rolling, the surfaces of the chromium-aluminum-silicon cast ingot, the copper-nickel alloy, the metal magnesium and the tin alloy are cleaned by alcohol.
S2 grinding: and grinding the cleaned chromium-aluminum-silicon ingot, copper-nickel alloy, metal magnesium and tin alloy by a grinding mill to obtain powder.
S3 preparing powder: 22 parts of chromium-aluminum-silicon ingot powder is placed in a feed hopper 14 on the left side of the top of a mixing cylinder 1, 12 parts of copper-nickel alloy powder is placed in a feed hopper 14 on the right side of the mixing cylinder 1, a motor 2 is started, the motor 2 works to drive a rotating rod 3 to rotate, the rotating rod 3 rotates to drive a rotating plate 12 to rotate, the rotating plate 12 rotates to enable the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder inside the two feed hoppers 14 to enter a fixed box 4 through a through groove 13 and a feed inlet 5, the rotating rod 3 rotates and simultaneously drives a mixing plate 6 to rotate, the mixing plate 6 rotates to mix the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder inside the fixed box 4, the rotating rod 3 rotates and simultaneously drives a special-shaped wheel 11 to rotate, the special-shaped wheel 11 rotates and drives to extrude two transverse plates 10, so that a telescopic rod 8 is shortened, meanwhile, the transverse plate 10 can be pushed to one side, so that chromium-aluminum-silicon ingot powder and copper-nickel alloy powder in the fixing box 4 can enter the next fixing box 4 from the discharge port 7, and after three times of mixing, the powder formed by mixing the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder can be discharged through the two discharge hoppers 15.
And (S4) powder mixing: then putting the mixed powder of the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder into a feed hopper 14 on the left side of the top of a mixing cylinder 1, putting 6 parts of metal magnesium into the feed hopper 14 on the right side of the top of the mixing cylinder 1, then starting a motor 2, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy through a mixing mechanism, discharging the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy from two discharge hoppers 15, then putting 4 parts of tin alloy powder into a feed inlet 5 on the right side of the top of the mixing cylinder 1, then starting the motor 2, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy powder through the mixing mechanism, and mixing the mixed powder of the chromium-aluminum-silicon ingot, the copper-nickel alloy powder and the chromium-aluminum-silicon ingot powder, Magnesium metal powder and tin alloy powder are discharged from the discharge hopper 15.
S5, placing into a mold: the mixed powder is placed inside a mold.
S6, high-temperature hot pressing: uniaxially pressed by a hydraulic press at a pressure of 1200kgf/cm 2 while being sintered by a high temperature.
S7, forming and cooling: and taking out the formed sputtering target material and the mold, and cooling the sputtering target material and the mold by a fan.
Embodiment 3, the invention provides a target material and a semiconductor device processing apparatus using the same, the target material comprises a chromium-aluminum-silicon ingot, a copper-nickel alloy, magnesium metal and a tin alloy, wherein the target material comprises the following components in parts by mass:
casting a chromium-aluminum-silicon ingot: 25 parts of (1);
copper-nickel alloy: 15 parts of (1);
metal magnesium: 8 parts of a mixture;
tin alloy: 6 parts.
Further, the rolling method of the target comprises the following specific steps:
s1 cleaning: before rolling, the surfaces of the chromium-aluminum-silicon cast ingot, the copper-nickel alloy, the metal magnesium and the tin alloy are cleaned by alcohol.
S2 grinding: and grinding the cleaned chromium-aluminum-silicon ingot, copper-nickel alloy, metal magnesium and tin alloy by a grinding mill to obtain powder.
S3 preparing powder: 25 parts of chromium-aluminum-silicon ingot powder is placed in a feed hopper 14 on the left side of the top of a mixing cylinder 1, 15 parts of copper-nickel alloy powder is placed in a feed hopper 14 on the right side of the mixing cylinder 1, a motor 2 is started, the motor 2 works to drive a rotating rod 3 to rotate, the rotating rod 3 rotates to drive a rotating plate 12 to rotate, the rotating plate 12 rotates to enable the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder inside the two feed hoppers 14 to enter a fixed box 4 through a through groove 13 and a feed inlet 5, the rotating rod 3 rotates and simultaneously drives a mixing plate 6 to rotate, the mixing plate 6 rotates to mix the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder inside the fixed box 4, the rotating rod 3 rotates and simultaneously drives a special-shaped wheel 11 to rotate, the special-shaped wheel 11 rotates and drives to extrude two transverse plates 10, so that a telescopic rod 8 is shortened, meanwhile, the transverse plate 10 can be pushed to one side, so that chromium-aluminum-silicon ingot powder and copper-nickel alloy powder in the fixing box 4 can enter the next fixing box 4 from the discharge port 7, and after three times of mixing, the powder formed by mixing the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder can be discharged through the two discharge hoppers 15.
And (S4) powder mixing: then putting the mixed powder of the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder into a feed hopper 14 on the left side of the top of a mixing cylinder 1, putting 8 parts of metal magnesium into the feed hopper 14 on the right side of the top of the mixing cylinder 1, then starting a motor 2, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy through a mixing mechanism, discharging the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy from two discharge hoppers 15, then putting 6 parts of tin alloy powder into a feed inlet 5 on the right side of the top of the mixing cylinder 1, then starting the motor 2, mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy powder through the mixing mechanism, and mixing the mixed powder of the chromium-aluminum-silicon ingot, the copper-nickel alloy powder and the chromium-aluminum-silicon ingot powder, Magnesium metal powder and tin alloy powder are discharged from the discharge hopper 15.
S5, placing into a mold: the mixed powder is placed inside a mold.
S6, high-temperature hot pressing: it was uniaxially pressed by a hydraulic press at a pressure of 1500kgf/cm 2 while being sintered by a high temperature.
S7, forming and cooling: and taking out the formed sputtering target material and the mold, and cooling the sputtering target material and the mold by a fan.
The above description is only a preferred embodiment of the present invention, and any person skilled in the art may modify the present invention or modify it into an equivalent technical solution by using the technical solution described above. Therefore, any simple modifications or equivalent substitutions made in accordance with the technical solution of the present invention are within the scope of the claims of the present invention.
Claims (9)
1. A semiconductor device processing equipment of target material, including mixing section of thick bamboo (1), its characterized in that: a mixing mechanism is arranged in the mixing cylinder (1) and extends out of the mixing cylinder (1);
the mixing mechanism comprises a motor (2), the motor (2) is fixedly arranged at the top of the mixing cylinder (1), the motor (2) is fixedly connected with a rotating rod (3) through an output shaft, the rotating rod (3) is arranged at the top of the mixing cylinder (1) and extends into the mixing cylinder (1), and a plurality of mixing components are fixedly arranged in the mixing cylinder (1);
the mixing component comprises a fixed box (4), the fixed box (4) is fixedly arranged inside a mixing drum (1), a rotating rod (3) penetrates through the fixed box (4) and is connected with the fixed box (4) through a sealing bearing, a feed inlet (5) at the top of the fixed box (4), a plurality of mixing plates (6) are fixedly arranged outside the rotating rod (3), the mixing plates (6) are all arranged inside the fixed box (4), discharge ports (7) are respectively arranged at two sides of the bottom of the fixed box (4), telescopic rods (8) are fixedly arranged at two sides of an inner cavity of the mixing drum (1), the telescopic rods (8) are arranged at the bottom of the fixed box (4), springs (9) are fixedly arranged outside the two telescopic rods (8), a transverse plate (10) is fixedly arranged at one side of the telescopic rod (8), the top of the transverse plate (10) is contacted with the bottom of the fixed box (4), the special-shaped wheel (11) is fixedly arranged outside the rotating rod (3), and two sides of the special-shaped wheel (11) are respectively contacted with the two transverse plates (10);
buffer gear still includes auxiliary assembly, auxiliary assembly includes rotor plate (12), rotor plate (12) are fixed to be located dwang (3) outside, mixing drum (1) inner chamber top is located in rotor plate (12), two logical grooves (13) have been seted up on rotor plate (12).
2. The target material and the semiconductor device processing equipment using the same as claimed in claim 1, wherein: the auxiliary assembly still includes two feeder hoppers (14), two motor (2) both sides are located respectively in feeder hopper (14), two inside feeder hopper (14) all extended into mixing drum (1), two lead to groove (13) top respectively in feeder hopper (14).
3. The target material and the semiconductor device processing equipment using the same as claimed in claim 1, wherein: the bottom of the rotating rod (3) is connected with the bottom of the inner cavity of the mixing cylinder (1) through a bearing.
4. The target material and the semiconductor device processing equipment using the same as claimed in claim 1, wherein: the cross section of the transverse plate (10) is L-shaped.
5. The target material and the semiconductor device processing equipment using the same as claimed in claim 1, wherein: the mixing drum is characterized in that two discharging hoppers (15) are fixedly arranged at the bottom of the mixing drum (1), and the two discharging hoppers (15) are respectively arranged on two sides of the bottom of the mixing drum (1).
6. The target material and the semiconductor device processing equipment using the same as claimed in claim 5, wherein: and connecting pipes (16) are fixedly arranged at the bottoms of the two discharging hoppers (15).
7. The target material and the semiconductor device processing equipment using the same as claimed in claim 1, wherein: and supporting plates (17) are fixedly arranged on two sides of the bottom of the mixing cylinder (1).
8. A target material, characterized in that: the alloy comprises a chromium-aluminum-silicon ingot, a copper-nickel alloy, metal magnesium and a tin alloy, wherein the components in parts by weight are as follows:
casting a chromium-aluminum-silicon ingot: 20-25 parts;
copper-nickel alloy: 10-15 parts;
metal magnesium: 5-8 parts;
tin alloy: 3-6 parts.
9. A target according to claim 8, wherein: the method also comprises a target rolling method, and the specific steps are as follows:
s1 cleaning: before rolling, cleaning the surfaces of chromium-aluminum-silicon cast ingots, copper-nickel alloys, metal magnesium and tin alloys by alcohol;
s2 grinding: grinding the cleaned chromium-aluminum-silicon ingot, copper-nickel alloy, metal magnesium and tin alloy by a grinding mill to obtain powder;
s3 preparing powder: 20-25 parts of chromium-aluminum-silicon ingot powder are placed in a feed hopper (14) on the left side of the top of a mixing cylinder (1), 10-15 parts of copper-nickel alloy powder are placed in a feed hopper (14) on the right side of the mixing cylinder (1), a motor (2) is started, the motor (2) works to drive a rotating rod (3) to rotate, the rotating rod (3) rotates to drive a rotating plate (12) to rotate, the rotating plate (12) rotates to enable the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder in the two feed hoppers (14) to enter a fixed box (4) through a through groove (13) and a feed port (5), the rotating rod (3) rotates and simultaneously drives a mixing plate (6) to rotate, the mixing plate (6) rotates to mix the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder in the fixed box (4), and the rotating rod (3) also drives a special-shaped wheel (11) to rotate simultaneously, the special-shaped wheel (11) rotates to drive the two transverse plates (10) to be extruded, so that the telescopic rod (8) is shortened, the spring (9) outside the telescopic rod (8) is compressed, the transverse plates (10) can be pushed to one side, chromium-aluminum-silicon ingot powder and copper-nickel alloy powder inside the fixed box (4) can enter the next fixed box (4) from the discharge port (7), and after three times of mixing, the powder formed by mixing the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder can be discharged through the two discharge hoppers (15);
and (S4) powder mixing: then putting the mixed powder of the chromium-aluminum-silicon ingot powder and the copper-nickel alloy powder into a feed hopper (14) on the left side of the top of a mixing cylinder (1), putting 5-8 parts of metal magnesium into the feed hopper (14) on the right side of the top of the mixing cylinder (1), then starting a motor (2), mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy through a mixing mechanism, discharging the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy from two discharge hoppers (15), then putting 3-6 parts of tin alloy powder into a feed inlet (5) on the right side of the top of the mixing cylinder (1), then starting the motor (2), and mixing the mixed powder of the metal magnesium powder, the chromium-aluminum-silicon ingot and the copper-nickel alloy powder and the tin alloy powder through the mixing mechanism, the mixed chromium-aluminum-silicon ingot powder, copper-nickel alloy powder, metal magnesium powder and tin alloy powder are discharged from a discharge hopper (15);
s5, placing into a mold: placing the mixed powder in a die;
s6, high-temperature hot pressing: uniaxially pressing at a pressure of 600kgf/cm 2 to 1500kgf/cm 2 by a hydraulic press while sintering by high temperature;
s7, forming and cooling: and taking out the formed sputtering target material and the mold, and cooling the sputtering target material and the mold by a fan.
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| CN202011281403.XA CN112295492A (en) | 2020-11-16 | 2020-11-16 | Target and semiconductor device processing equipment applying same |
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| CN202011281403.XA CN112295492A (en) | 2020-11-16 | 2020-11-16 | Target and semiconductor device processing equipment applying same |
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| EP2428266A1 (en) * | 2010-09-10 | 2012-03-14 | Mega Data GmbH | Polymerization of high viscosity materials |
| CN104419859A (en) * | 2013-09-11 | 2015-03-18 | 安泰科技股份有限公司 | Chromium-aluminum-silicon alloy target material and preparation method thereof |
| CN110935380A (en) * | 2019-12-05 | 2020-03-31 | 江西纳森科技有限公司 | Efficient dispersing and stirring equipment for processing organosilicon adhesive sealant |
| CN111389264A (en) * | 2020-04-29 | 2020-07-10 | 安徽文王酿酒股份有限公司 | Continuous stirring device for distiller's yeast |
| CN111633020A (en) * | 2020-06-01 | 2020-09-08 | 刘庆军 | Municipal garden afforestation soil environmental protection repairing device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2428266A1 (en) * | 2010-09-10 | 2012-03-14 | Mega Data GmbH | Polymerization of high viscosity materials |
| CN104419859A (en) * | 2013-09-11 | 2015-03-18 | 安泰科技股份有限公司 | Chromium-aluminum-silicon alloy target material and preparation method thereof |
| CN110935380A (en) * | 2019-12-05 | 2020-03-31 | 江西纳森科技有限公司 | Efficient dispersing and stirring equipment for processing organosilicon adhesive sealant |
| CN111389264A (en) * | 2020-04-29 | 2020-07-10 | 安徽文王酿酒股份有限公司 | Continuous stirring device for distiller's yeast |
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Address after: 215300 No. 135 CHENFENG East Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: Guangyang new material technology (Kunshan) Co.,Ltd. Address before: 215000 south of CHENFENG Road, Wusongjiang Industrial Park, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant before: KUNSHAN MULTIRESOURCE TECHNOLOGY Inc. |
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