CN112275696B - Device and method for removing nano-scale particles adsorbed on surface of silicon wafer - Google Patents
Device and method for removing nano-scale particles adsorbed on surface of silicon wafer Download PDFInfo
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- CN112275696B CN112275696B CN202010974153.1A CN202010974153A CN112275696B CN 112275696 B CN112275696 B CN 112275696B CN 202010974153 A CN202010974153 A CN 202010974153A CN 112275696 B CN112275696 B CN 112275696B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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Abstract
The invention belongs to the technical field related to semiconductor surface cleaning, and discloses a device and a method for removing nano-scale particles adsorbed on the surface of a silicon wafer, wherein the device comprises a vacuum component and a liquid drop emission and acceleration component connected with the vacuum component; the liquid drop emission and acceleration component comprises a liquid storage, a graphite electrode, a PEEK capillary tube, a fused silica capillary tube and a grounded extraction electrode; the liquid storage is arranged above the vacuum assembly and used for containing the conductive solution; the graphite electrode is arranged on the liquid storage, and two ends of the graphite electrode are respectively used for being connected with a direct current power supply and being contacted with the conductive liquid; one end of the PEEK capillary is connected with the liquid storage, the other end of the PEEK capillary is connected with the fused quartz capillary, and one end of the fused quartz capillary extends into the vacuum component; the extraction electrode is disposed within the vacuum assembly and is positioned opposite the emission tip formed by the fused silica capillary. The invention improves the cleaning efficiency, reduces the cost and realizes no liquid residue after removal.
Description
Technical Field
The invention belongs to the technical field related to semiconductor surface cleaning, and particularly relates to a device and a method for removing nano-scale particles adsorbed on the surface of a silicon wafer.
Background
The integrated circuit industry represents a national high-end manufacturing industry level, and the demand of integrated circuit chips is greatly promoted by emerging industries such as cloud computing, internet of things and big data at present. For example, about $ 2000 million of chips are imported each year in China, and the chips exceed the oil import amount of China, so that the chips are the largest chip consumption market in the world, and then only 16 percent of the chips are localized. The integrated circuit industry is related to national security and is a weak link in the manufacturing industry, and the neck clamping technology surrounding the integrated circuit industry becomes a difficult problem which needs to be overcome urgently by scientific researchers.
Studies have shown that contamination particles larger than one-half the process size can lead to device failure. As integrated circuit processes have progressed below 10 nanometers, contamination particles of several nanometers in size can cause device defects. The main technology of the current pollution particle removal research is a fluid removal technology, and the principle of the technology is that fluid impacts pollution particles to generate removal force, so that the pollution particles such as high-pressure liquid jet flow and high-pressure gas jet flow are removed, but the fluid velocity accelerated by high pressure can only reach hundreds of meters per second, particles with small particle size are difficult to remove, especially single liquid drops generated by the high-pressure liquid jet flow have large volume, the device structure can be damaged, and secondary pollution is caused by liquid residues. In order to solve the problems existing in the semiconductor surface cleaning process, a jet flow technology for obtaining high-speed and small-particle-size liquid drops becomes a leading edge and hot spot problem in the technical research of the cleaning process.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a device and a method for removing nano-scale particles adsorbed on the surface of a silicon wafer, wherein a conductive liquid is broken into nano-scale small droplets by a strong electric field and is accelerated to thousands of meters per second, the nano-scale particles adsorbed on the surface of the silicon wafer are removed by using the impact effect of the high-speed droplets, and simultaneously, the solution is completely volatilized by bombardment heat generated at the moment of impact, so that the problem that small-particle adsorbates are difficult to remove is solved, the removal rate of the particles on the surface of a semiconductor is improved, and the process steps are simplified.
In order to achieve the above objects, according to one aspect of the present invention, there is provided an apparatus for removing nano-scale particles adsorbed on a surface of a silicon wafer, the apparatus comprising a vacuum module and a droplet emission and acceleration module connected to the vacuum module; the liquid drop emission and acceleration component comprises a liquid storage, a graphite electrode, a PEEK capillary tube, a fused quartz capillary tube and an extraction electrode;
the liquid storage is arranged above the vacuum assembly and used for containing a conductive solution; the graphite electrode is arranged on the liquid storage, one end of the graphite electrode is used for being connected with a direct current power supply, and the other end of the graphite electrode is used for being in contact with the conductive liquid; one end of the PEEK capillary is connected with the liquid storage, the other end of the PEEK capillary is connected with the fused quartz capillary, and one end of the fused quartz capillary extends into the vacuum assembly; the extraction electrode is arranged in the vacuum component and is opposite to the emission tip formed by the fused quartz capillary;
wherein the extraction electrode is grounded; when the device works, the graphite electrode is connected with the direct current power supply, so that voltage drop is generated between the emission tip and the extraction electrode, and an electric field generated by the voltage drop is used for crushing, emitting and accelerating the conductive liquid.
Further, the voltage of the direct current power supply is 0-30000V.
Further, the vacuum assembly includes a vacuum cavity; the liquid drop emission and acceleration assembly further comprises a mounting base, a liquid storage device bracket and an extraction electrode mounting guide rod, wherein the mounting base is arranged on the vacuum cavity, the liquid storage device bracket is arranged on the mounting base, and the liquid storage device is arranged on the liquid storage device mounting bracket; one end of the extraction electrode mounting guide rod is connected to the mounting base, and the other end of the extraction electrode mounting guide rod extends into the vacuum cavity; the extraction electrode is movably connected to the extraction electrode mounting guide, and the extraction electrode mounting guide moves along the extraction electrode mounting guide to change the distance between the extraction electrode and the fused silica capillary.
Further, the device comprises a vertical lifting platform arranged in the vacuum cavity, wherein the vertical lifting platform is used for bearing a silicon wafer and driving the silicon wafer to move up and down so as to adjust the distance between the silicon wafer and the extraction electrode within the range of 50-200 mm.
Furthermore, the vacuum assembly further comprises a hot cathode vacuum gauge, a flange electrode, a mechanical pump and an exhaust valve, wherein the mechanical pump, the hot cathode vacuum gauge, the flange electrode and the exhaust valve are respectively arranged on the vacuum cavity.
Furthermore, two ends of the PEEK capillary are respectively connected with the liquid storage and the mounting base through PEEK interfaces.
Furthermore, the mounting base is provided with a threaded hole, and the threaded hole is matched with the corresponding PEEK interface.
Further, the liquid storage device is made of a polyformaldehyde resin material.
According to another aspect of the invention, a method for removing nano-scale particles adsorbed on the surface of a silicon wafer is provided, which mainly comprises the following steps: firstly, providing the device for removing the nano-scale particles adsorbed on the surface of the silicon wafer, and arranging the silicon wafer to be cleaned on the device; and then, cleaning the silicon wafer by using the device.
In general, compared with the prior art, the device and the method for removing the nano-scale particles adsorbed on the surface of the silicon wafer provided by the invention have the following beneficial effects:
1. because the liquid drops can be accelerated to thousands of meters per second under the action of the strong electric field, the removal effect is obviously improved compared with the traditional liquid jet flow technology; meanwhile, the liquid drops are impacted to form shock waves, the temperature rise caused by the heat energy converted in the impacting process is enough to pyrolyze and evaporate the liquid drops, and the problem of surface liquid residue after the pollution particles are removed can be solved; in addition, because the droplets are small in size (on the same scale as the particles), the momentum of a single droplet upon impact is small, and the likelihood of damage to the microstructure is greatly reduced.
2. The vertical lifting platform is used for bearing a silicon wafer and driving the silicon wafer to move up and down so as to adjust the distance between the silicon wafer and the extraction electrode within the range of 50-200 mm, and the size of ion beam current received by the surface of the sample silicon wafer can be changed through adjusting the distance.
3. The extraction electrode is movably connected to the extraction electrode mounting guide rod, and the distance between the extraction electrode and the fused silica capillary is changed by moving along the extraction electrode mounting guide rod so as to change the electric field gradient and the shape between the extraction electrode and the fused silica capillary.
4. The device has the advantages of simple structure, convenience in installation and debugging, small occupied space, low cost and convenience in operation.
5. The mounting base is provided with a threaded hole, the threaded hole is matched with the corresponding PEEK interface, and therefore the pipeline can be automatically fixed and sealed.
6. The PEEK capillary lower extreme centre gripping has the fused silica capillary, the fused silica capillary can avoid blockking up the capillary because of point discharge.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for removing adsorbed nanoparticles from the surface of a silicon wafer according to the present invention;
FIG. 2 is a schematic view of the apparatus for removing nano-scale particles from the surface of a silicon wafer in FIG. 1 along another angle.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: the device comprises a vacuum cavity 1, an extraction electrode mounting guide rod 2, a mounting base 3, a liquid storage support 4, a liquid storage 5, a graphite electrode 6, a PEEK interface 7, a microflow control valve 8, a PEEK capillary tube 9, a fused quartz capillary tube 10, an extraction electrode 11, a vertical lifting platform 12, a hot cathode vacuum gauge 13, a flange electrode 14, a mechanical pump 15 and an exhaust valve 16.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1 and 2, the apparatus for removing nano-particles adsorbed on the surface of a silicon wafer according to the present invention includes a vacuum module, a vertical lift 12 disposed in the vacuum module, and a droplet emission and acceleration module connected to the vacuum module. The vacuum assembly comprises a vacuum cavity 1, a hot cathode vacuum gauge 13, a flange electrode 14, a mechanical pump 15 and an exhaust valve 16.
All the interfaces arranged on the vacuum cavity 1 adopt standard flange interfaces, and a vacuum observation window and a door are further arranged on the vacuum cavity. In the present embodimentThe vacuum chamber 1 can reach 10-1～10-2A stable vacuum environment of Pa; an opening is formed in the upper end of the vacuum cavity 1.
The mechanical pump 15, the hot cathode vacuum gauge 13, the flange electrode 14 and the exhaust valve 16 are respectively arranged on the vacuum chamber 1.
The vertical lifting platform 12 is arranged in the vacuum chamber 1 and is arranged on the bottom surface of the vacuum chamber 1. The vertical lifting platform 12 is arranged opposite to the opening, and is used for mounting a silicon wafer to be cleaned and driving the silicon wafer to move up and down so as to change the distance between the silicon wafer and the opening and further change the size of the ion beam current received by the surface of the silicon wafer. In this embodiment, a clamping member is installed on one side of the vertical lifting platform 12 facing the opening, and the clamping member is used for clamping a silicon wafer.
The liquid drop emission and acceleration component comprises an extraction electrode installation guide rod 2, an installation base 3, a liquid storage support 4, a liquid storage 5, a graphite electrode 6, a PEEK interface 7, a micro-flow control valve 8, a PEEK capillary tube 9, a fused quartz capillary tube 10 and an extraction electrode 11, wherein the installation base 3 is arranged on the vacuum cavity 1 and covers the opening. The liquid reservoir holder 4 is provided on the mounting base 3, and the liquid reservoir 5 is provided on the liquid reservoir holder 4. The graphite electrode 6 is arranged within the liquid reservoir 5. One end of the PEEK capillary 9 is connected to one end of the liquid storage 5 facing the mounting base 3 through the PEEK interface 7, the other end is connected to the mounting base 3 through the PEEK interface 7 and connected to the fused silica capillary 10, and the fused silica capillary 10 extends into the vacuum chamber 1 through the opening. The microflow control valve 8 is provided on the PEEK capillary tube 9. One end of the extraction electrode installation guide rod 2 is connected with the installation seat 3, and the other end of the extraction electrode installation guide rod extends into the vacuum cavity 1. One end of the extraction electrode 11 is movably connected to the extraction electrode mounting guide rod 2. Wherein the extraction electrode 11 can move up and down along the extraction electrode mounting guide 2 to adjust the distance between the extraction electrode 11 and the fused silica capillary 9, thereby changing the electric field gradient and shape between the two.
In this embodiment, the vertical lifting platform 12 can adjust the distance between the silicon wafer and the extraction electrode 11 within a range of 50-200 mm, and the size of the ion beam current received by the surface of the sample silicon wafer can be changed through the adjustment; the mounting base 3 is made of polyformaldehyde resin materials, a threaded hole is formed in the center of the mounting base 3, and the threaded hole is matched with the corresponding PEEK interface 7 to automatically fix and seal a pipeline; the fused silica capillary 10 is used to avoid clogging of the capillary by tip discharge.
In addition, the device connects a direct-current high-voltage power supply to the conductive liquid in the liquid storage 5 through the graphite electrode 6, and the voltage range of the direct-current high-voltage power supply is 0-30000V. Wherein, the extraction electrode 11 is grounded; the liquid stored in the liquid storage 5 is a conductive solution with easily decomposed solute and easily volatile solvent, such as ammonium carbonate, sodium bicarbonate and other aqueous solutions.
The graphite electrode 6 is fixed in the liquid storage 5, the lower end of the graphite electrode is inserted into a conductive solution, the upper end of the graphite electrode is connected with an adjustable direct-current high-voltage power supply, and the liquid is conductive, and the liquid drop emission and acceleration components are mutually communicated through a pipeline system, so that the emission tip formed on the fused quartz capillary tube 10 is equipotential to the liquid in the liquid storage 4; in addition, the extraction electrode 11 is grounded, so that liquid drop emission and electric field intensity acceleration can be realized by adjusting the output voltage of a direct-current high-voltage power supply.
The invention also provides a method for removing nano-scale particles adsorbed on the surface of a silicon wafer, which mainly comprises the following steps: firstly, providing the device for removing the nano-scale particles adsorbed on the surface of the silicon wafer, and arranging the silicon wafer to be cleaned on the device; and then, removing the particles adsorbed on the surface of the silicon wafer by using the device.
The invention is described in further detail below with reference to a specific embodiment.
The method for removing the nano-scale particles adsorbed on the surface of the silicon wafer mainly comprises the following steps:
(1) and (5) clamping the silicon wafer. A silicon wafer is placed on the vertical lift table, and the silicon wafer is positioned using the holder, taking care that this step is performed in a state where the power is turned off and the mechanical pump is not operating.
(2) And starting the computer. And closing the door of the vacuum cavity, sequentially opening the mechanical pump, opening the hot cathode vacuum gauge 13 after the pumping speed of the mechanical pump is stable, opening the micro-flow control valve 8 when the reading of the hot cathode vacuum gauge 13 reaches the corresponding vacuum degree, and then opening the high-voltage power supply and adjusting to the required output voltage.
(3) After the silicon wafer enters the working state, the high-speed liquid drop jet flow can remove particles on the surface of the silicon wafer, and the silicon wafer waits for several minutes.
(4) And (5) shutting down. And (4) closing the high-voltage power supply, the micro-fluidic control valve and the oil pump in sequence, opening the exhaust valve, and taking out the cleaned silicon wafer.
(5) And (6) surface analysis. And (4) timely sending the taken silicon wafer to the SEM for characterization analysis to determine the surface cleaning effect and the particulate matter removal rate.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A device for removing nano-scale particles adsorbed on the surface of a silicon wafer is characterized in that:
the device comprises a vacuum component and a liquid drop emission and acceleration component connected with the vacuum component; the liquid drop emission and acceleration component comprises a liquid storage, a graphite electrode, a PEEK capillary tube, a fused quartz capillary tube and an extraction electrode;
the liquid storage is arranged above the vacuum assembly and used for containing a conductive solution; the graphite electrode is arranged on the liquid storage, one end of the graphite electrode is used for being connected with a direct current power supply, and the other end of the graphite electrode is used for being in contact with the conductive liquid; one end of the PEEK capillary is connected with the liquid storage, the other end of the PEEK capillary is connected with the fused quartz capillary, and one end of the fused quartz capillary extends into the vacuum assembly; the extraction electrode is arranged in the vacuum assembly and is opposite to the emission tip formed by the fused silica capillary tube, the extraction electrode is movably connected to the extraction electrode mounting guide rod, and the distance between the extraction electrode and the fused silica capillary tube is changed by moving along the extraction electrode mounting guide rod;
wherein the extraction electrode is grounded; when the device works, the graphite electrode is connected with the direct current power supply, so that voltage drop is generated between the emission tip and the extraction electrode, and an electric field generated by the voltage drop is used for crushing, emitting and accelerating the conductive liquid.
2. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to claim 1, wherein: the voltage of the direct current power supply is 0-30000V.
3. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to claim 1, wherein: the vacuum assembly comprises a vacuum cavity; the liquid drop emission and acceleration assembly further comprises a mounting base, a liquid storage device bracket and an extraction electrode mounting guide rod, wherein the mounting base is arranged on the vacuum cavity, the liquid storage device bracket is arranged on the mounting base, and the liquid storage device is arranged on the liquid storage device mounting bracket; one end of the extraction electrode mounting guide rod is connected to the mounting base, and the other end of the extraction electrode mounting guide rod extends into the vacuum cavity.
4. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to claim 3, wherein: the device comprises a vertical lifting platform arranged in the vacuum cavity, wherein the vertical lifting platform is used for bearing a silicon wafer and driving the silicon wafer to move up and down so as to adjust the distance between the silicon wafer and the extraction electrode within the range of 50-200 mm.
5. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to claim 3, wherein: the vacuum assembly further comprises a hot cathode vacuum gauge, a flange electrode, a mechanical pump and an exhaust valve, wherein the mechanical pump, the hot cathode vacuum gauge, the flange electrode and the exhaust valve are respectively arranged on the vacuum cavity.
6. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to claim 3, wherein: and two ends of the PEEK capillary tube are respectively connected with the liquid storage and the mounting base through PEEK interfaces.
7. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to claim 6, wherein: the mounting base is provided with a threaded hole, and the threaded hole is matched with the corresponding PEEK interface.
8. The apparatus for removing nano-scale particles adsorbed on the surface of a silicon wafer according to any one of claims 1 to 6, wherein: the liquid storage is processed by adopting a polyformaldehyde resin material.
9. A method for removing nano-scale particles adsorbed on the surface of a silicon wafer is characterized by comprising the following steps: firstly, providing a device for removing nano-scale particles adsorbed on the surface of a silicon wafer according to any one of claims 1 to 8, and arranging the silicon wafer to be cleaned on the device; and then, cleaning the silicon wafer by using the device.
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| JP2000150444A (en) * | 1998-11-14 | 2000-05-30 | Samsung Electronics Co Ltd | Cleaning method and device used therefor |
| JP2000277476A (en) * | 1999-03-24 | 2000-10-06 | Shimada Phys & Chem Ind Co Ltd | Semiconductor wafer cleaning device |
| CN202185420U (en) * | 2011-07-22 | 2012-04-11 | 江阴市爱多光伏科技有限公司 | Cleaning device of silicon wafer box |
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