CN112259456B - 一种改善钝化层表面金属腐蚀残留的腐蚀工艺 - Google Patents
一种改善钝化层表面金属腐蚀残留的腐蚀工艺 Download PDFInfo
- Publication number
- CN112259456B CN112259456B CN202011117109.5A CN202011117109A CN112259456B CN 112259456 B CN112259456 B CN 112259456B CN 202011117109 A CN202011117109 A CN 202011117109A CN 112259456 B CN112259456 B CN 112259456B
- Authority
- CN
- China
- Prior art keywords
- corrosion
- corrosive liquid
- niag
- wafer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005260 corrosion Methods 0.000 title claims abstract description 35
- 239000002184 metal Substances 0.000 title claims abstract description 32
- 230000007797 corrosion Effects 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000002161 passivation Methods 0.000 title claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 20
- 229910005544 NiAg Inorganic materials 0.000 claims description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229960000583 acetic acid Drugs 0.000 claims description 6
- 239000012362 glacial acetic acid Substances 0.000 claims description 6
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract description 2
- 239000002253 acid Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
一种改善钝化层表面金属腐蚀残留的腐蚀工艺。涉及一种半导体制造—湿法腐蚀工艺技术领域,尤其涉及一种改善钝化层表面金属腐蚀残留的腐蚀工艺。提供了一种提高产品线条美观、降低产品过腐蚀导致报废的高风险的一种改善钝化层表面金属腐蚀残留的腐蚀工艺。本发明中用NIAG腐蚀液取代AL腐蚀液:NIAG腐蚀液的腐蚀速率比AL腐蚀液慢,在保证了产品线条美观的同时也降低了产品过腐蚀导致报废的高风险。用NIAG腐蚀液取代AL腐蚀液的前提为保证NIAG腐蚀的过程中,金属层表面不存在NIO和NI是极易被氧化的金属,本案在第一次经过PBE腐蚀液后不过水槽,直接进行NIAG腐蚀就避免了NI被氧化的问题。本发明具有提高产品线条美观、降低产品过腐蚀导致报废的高风险等特点。
Description
技术领域
本发明涉及一种半导体制造—湿法腐蚀工艺技术领域,尤其涉及一种改善钝化层表面金属腐蚀残留的腐蚀工艺。
背景技术
TSBD(沟槽肖特基)产品,刻蚀SIN(氮化硅层)过程中划片道内氧化层受影响被轻微过刻蚀导致蒸发至晶片表面的金属划片道区域厚度不均匀。腐蚀的过程中金属NI极易被氧化形成了一层保护膜,阻碍了酸液对金属的腐蚀。残留的Ni形成NIO,较难去除。现需要摸索出一种有效的腐蚀工艺,解决金属残留的同时保证腐蚀后金属线条正常。
原金属腐蚀工艺流程为:
1 | 2 | 3 | 4 | 5 | 6 | 7 |
NiAg腐蚀液(350s) | 第一次过水槽 | PBE腐蚀液(20s) | 第二次过水槽 | EDTA腐蚀液(5s) | 第三次过水槽 | 甩干 |
原腐蚀工艺流程残留异常比例较高(如图2所示,金属残留显微镜照片),套刻返工生产效率较低,成本较高且加腐AL局部大面积区域产生过腐蚀的风险较高。
发明内容
本发明针对以上问题,提供了一种提高产品线条美观、降低产品过腐蚀导致报废的高风险的一种改善钝化层表面金属腐蚀残留的腐蚀工艺。
本发明的技术方案是:一种改善钝化层表面金属腐蚀残留的腐蚀工艺,包括以下步骤:
1)、将完成金属光刻的晶片放入NiAg腐蚀液中进行腐蚀,至晶片表面NiAg腐蚀干净;
2)、将经过步骤1)的晶片放置于水槽中;
3)、将经过步骤2)的晶片放置于PBE腐蚀液中,至晶片表面Ti腐蚀干净;
4)、将经过步骤3)的晶片放入NiAg腐蚀液中,至晶片表面残留的Ni腐蚀干净;
5)、将经过步骤4)的晶片放入水槽中;
6)、将经过步骤5)的晶片放入PBE腐蚀液中,至晶片表面残留Ni下的Ti腐蚀干净;
7)、将经过步骤6)的晶片放入水槽中;
8)、通过设备将晶片甩干。
步骤1)所述的NiAg腐蚀液为冰乙酸、硝酸和水的混合溶液。
所述冰乙酸、硝酸和水的体积比为65%:20%:15%。
步骤3)所述的PBE腐蚀液为HNO3, CH3COOH, HF和H2O混合溶液。
HNO3,CH3COOH, HF和H2O的体积比为8.9%:3.7%:2.1%:85.3%。
本发明中用NIAG腐蚀液取代AL腐蚀液:NIAG腐蚀液的腐蚀速率比AL腐蚀液慢,在保证了产品线条美观的同时也降低了产品过腐蚀导致报废的高风险。用NIAG腐蚀液取代AL腐蚀液的前提为保证NIAG腐蚀的过程中,金属层表面不存在NIO和NI是极易被氧化的金属,本案在第一次经过PBE腐蚀液后不过水槽,直接进行NIAG腐蚀就避免了NI被氧化的问题。本发明具有提高产品线条美观、降低产品过腐蚀导致报废的高风险等特点。
附图说明
图1是采用本发明工艺腐蚀后显微镜照片,
图2是原金属腐蚀工艺腐蚀后的存在金属残留的显微镜照片;
图3是金属光刻后的结构示意图。
具体实施方式
本发明如图1和图3所示,图3中PR表示光刻胶层,TiNiAg表示从上而下依次排布的Ag层、Ni层和Ti层,SiN表示钝化层,FOX表示场氧层。
一种改善钝化层表面金属腐蚀残留的腐蚀工艺,包括以下步骤:
1)、将正面依次蒸发金属Ti层、Ni层和Ag层,并完成金属光刻的晶片放入NiAg腐蚀液中进行腐蚀,至晶片表面NiAg腐蚀干净;
3Ag+4HNO3=3AgNO3+NO+2H2O,
Ni+4HNO3 =Ni(NO3)2+2NO2+2H2O;
2)、将经过步骤1)的晶片放置于水槽中,其目的为:冲洗表面的酸,避免带入下一个酸槽;
3)、将经过步骤2)的晶片放置于PBE腐蚀液中,至晶片表面Ti腐蚀干净;PBE腐蚀液的目的:腐蚀金属Ti;此处不放到水槽中冲水,避免残留的Ni氧化;
4)、将经过步骤3)的晶片放入NiAg腐蚀液中,至晶片表面残留的Ni腐蚀干净;
5)、将经过步骤4)的晶片放入水槽中,其目的为冲洗表面的酸;
6)、将经过步骤5)的晶片放入PBE腐蚀液中,至晶片表面残留Ni下的Ti腐蚀干净;通过PBE腐蚀液彻底将金属腐蚀干净。
7)、将经过步骤6)的晶片放入水槽中,彻底洗干净表面的酸;
8)、通过甩干机设备将晶片甩干。
步骤1)所述的NiAg腐蚀液为冰乙酸(浓度为98%)、硝酸(浓度为70%)和水的混合溶液。
所述冰乙酸、硝酸和水的体积比为65%:20%:15%。
步骤3)所述的PBE腐蚀液为HNO3(浓度为70%), CH3COOH(浓度为98%), HF(浓度为49%)和H2O混合溶液。
HNO3, CH3COOH, HF和H2O的体积比为8.9%:3.7%:2.1%:85.3%。
Ti+6HF=H2TiF6+2H2;
Ti+4H++6HF2=(TiF6)2+2H2+6HF;
本案中用NiAg腐蚀液取代原金属腐蚀工艺中步骤5的AL腐蚀液,NiAg腐蚀液的腐蚀速率比AL腐蚀液慢,在保证了产品线条美观的同时也降低了产品过腐蚀导致报废的高风险。
用NiAg腐蚀液取代AL腐蚀液的前提为保证NiAg腐蚀的过程中,金属层表面不存在NiO,Ni是极易被氧化的金属,在上述原工艺流程中我们在第3步过完PBE后不过水槽,直接进行NiAg腐蚀就避免了Ni被氧化的问题。
Claims (1)
1.一种改善钝化层表面金属腐蚀残留的腐蚀工艺,其特征在于,包括以下步骤:
1)、将完成金属光刻的晶片放入NiAg腐蚀液中进行腐蚀,至晶片表面NiAg腐蚀干净;
2)、将经过步骤1)的晶片放置于水槽中;
3)、将经过步骤2)的晶片放置于PBE腐蚀液中,至晶片表面Ti腐蚀干净;
4)、将经过步骤3)的晶片放入NiAg腐蚀液中,至晶片表面残留的Ni腐蚀干净;
5)、将经过步骤4)的晶片放入水槽中;
6)、将经过步骤5)的晶片放入PBE腐蚀液中,至晶片表面残留Ni下的Ti腐蚀干净;
7)、将经过步骤6)的晶片放入水槽中;
8)、通过设备将晶片甩干;
步骤1)所述的NiAg腐蚀液包括浓度为98%的冰乙酸、浓度为70%的硝酸和水的混合溶液;
所述冰乙酸、硝酸和水的体积比为65%:20%:15%;
步骤3)所述的PBE腐蚀液包括浓度为70%的HNO3,浓度为98%的CH3COOH,浓度为49%的HF和H2O混合溶液;
HNO3,CH3COOH, HF和H2O的体积比为8.9%:3.7%:2.1%:85.3%。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011117109.5A CN112259456B (zh) | 2020-10-19 | 2020-10-19 | 一种改善钝化层表面金属腐蚀残留的腐蚀工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011117109.5A CN112259456B (zh) | 2020-10-19 | 2020-10-19 | 一种改善钝化层表面金属腐蚀残留的腐蚀工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112259456A CN112259456A (zh) | 2021-01-22 |
CN112259456B true CN112259456B (zh) | 2023-12-15 |
Family
ID=74244678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011117109.5A Active CN112259456B (zh) | 2020-10-19 | 2020-10-19 | 一种改善钝化层表面金属腐蚀残留的腐蚀工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112259456B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115261863B (zh) * | 2022-08-02 | 2024-03-26 | 扬州国宇电子有限公司 | 一种用于快恢复二极管的金属颗粒腐蚀液及金属腐蚀方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097288A (zh) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | 一种背面金属工艺的返工方法 |
CN102915927A (zh) * | 2012-10-11 | 2013-02-06 | 杭州立昂微电子股份有限公司 | 一种高反压肖特基二极管正面金属层的湿法腐蚀方法 |
-
2020
- 2020-10-19 CN CN202011117109.5A patent/CN112259456B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097288A (zh) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | 一种背面金属工艺的返工方法 |
CN102915927A (zh) * | 2012-10-11 | 2013-02-06 | 杭州立昂微电子股份有限公司 | 一种高反压肖特基二极管正面金属层的湿法腐蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112259456A (zh) | 2021-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI598430B (zh) | 蝕刻組合物及其使用方法 | |
JP4815406B2 (ja) | シリコン酸化膜選択性湿式エッチング溶液及びエッチング方法 | |
CN108060420B (zh) | 一种刻蚀液及其制备方法和应用 | |
CN104752551A (zh) | 一种太阳能硅片的清洗方法 | |
CN101295144A (zh) | 光刻胶剥离液 | |
CN112259456B (zh) | 一种改善钝化层表面金属腐蚀残留的腐蚀工艺 | |
CN109560023A (zh) | 一种清洗单晶硅片的混酸及其清洗方法 | |
JPH08195369A (ja) | 基板の洗浄方法 | |
TWI388943B (zh) | 剝離劑組合物 | |
CN111276393B (zh) | 一种晶圆级封装瞬态电压抑制二极管的制造方法 | |
JPWO2014133137A1 (ja) | 半導体基板洗浄システムおよび半導体基板の洗浄方法 | |
CN101097866A (zh) | 在半导体器件中形成金属图案的方法 | |
WO2012009940A1 (zh) | 极大规模集成电路钨插塞cmp后表面洁净方法 | |
CN106711248A (zh) | 一种降低铸锭多晶硅片表面反射率的方法 | |
TW508691B (en) | Cleaning method after etching metal layer | |
CN102486994A (zh) | 一种硅片清洗工艺 | |
JP4637010B2 (ja) | 剥離剤組成物 | |
JP3528534B2 (ja) | シリコンウエーハの洗浄方法 | |
TWI238925B (en) | Resist stripping composition and method of producing semiconductor device using the same | |
CN108511316A (zh) | 半导体晶片的清洗方法 | |
CN112259455B (zh) | 一种改善带钝化层结构的Ag面产品金属残留的方法 | |
JP4151927B2 (ja) | 半導体基板の洗浄方法 | |
US5930650A (en) | Method of etching silicon materials | |
CN114326333A (zh) | 一种聚乙烯醇肉桂酸酯型kpr光刻胶蚀刻残留剥离剂组合物 | |
CN115207154A (zh) | 一种异质结太阳能电池制绒清洗方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |