CN112234018B - Ultrathin large-area tin ball printing process adopting polyimide - Google Patents
Ultrathin large-area tin ball printing process adopting polyimide Download PDFInfo
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- CN112234018B CN112234018B CN202011120993.8A CN202011120993A CN112234018B CN 112234018 B CN112234018 B CN 112234018B CN 202011120993 A CN202011120993 A CN 202011120993A CN 112234018 B CN112234018 B CN 112234018B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
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Abstract
The invention discloses an ultrathin large-area tin ball printing process adopting polyimide, which comprises the following steps of: forming a sputtering layer on the surface of a wafer, performing a photolithography process on the wafer to form a UBM PAD and a photoresist layer, coating polyimide on the front surface to complete bonding/curing of the polyimide, turning the wafer over, grinding and etching to complete the photolithography process on a back element on the back surface of the wafer, performing thick film coating on the polyimide coating on the back surface, turning the wafer over to the front surface, manufacturing a thick film photoresist pattern at an opening of the UBM PAD, removing the photoresist after a first window is opened by printing and filling solder paste, spraying and coating a soldering flux, performing heating reflux to form a solder ball, turning the wafer back surface to the back surface after the front surface of the wafer is welded, removing the polyimide coating thick film on the back surface, removing an insulating layer, and performing a back surface metal evaporation process. Compared with a glass carrier, the photosensitive and stress buffering polyimide film disclosed by the invention has the advantages that the photosensitive and stress buffering function is assisted to better complete wafer grinding, etching and micro-lithography processes, and the process difficulty is reduced.
Description
Technical Field
The invention relates to the field of semiconductor process, in particular to an ultrathin large-area tin ball printing process adopting polyimide.
Background
The ultrathin wafer manufacturing engineering aims at overcoming the problem of bending or breaking of the wafer, except for adopting a glass slide (the front face of the glass slide is printed with a tin ball, a window needs to be opened on the glass slide, the manufacturing process is difficult), polyimide can also be adopted to respectively achieve the stress buffering effect on the front face and the back face, the polyimide can be remained on an element to be used as a protective layer, and a photosensitive polyimide material can be adopted to be directly developed to form a pattern, but the polyimide is a high polymer material and is not suitable for manufacturing a high vacuum process after being attached to the wafer, the problem of degassing is not caused unless complete induction bonding and solidification are carried out, and the polyimide cannot bear the high temperature step exceeding (500 ℃) and can be decomposed and damaged;
the metal oxide semiconductor field effect transistor or the insulated gate bipolar transistor can adopt the polyimide stress buffering characteristic to manufacture the printing process of the solder ball with large area on the front surface, and the printing process of the solder paste of the ultrathin wafer can be smoothly carried out due to the stress buffering effect of the polyimide on the back surface, so that the wafer cannot bear the printing pressure due to the thinness of the wafer.
And the back metal coating can remove the polyimide on the back after the front printing process is finished, clean the back of the wafer, etch the thin oxide layer on the surface and then use evaporation Ti/Ni/Ag or other metal to stack up and finish the back metal process, and aiming at the situation, a novel ultrathin large-area tin ball structure and the printing process thereof are provided.
Disclosure of Invention
The invention aims to provide an ultrathin large-area tin ball printing process adopting polyimide, wherein the polyimide is used, compared with a glass carrier, the photosensitive and stress buffering functions are assisted to better complete the wafer grinding, etching and lithography processes, the process difficulty is reduced, the wafer can be reduced to be 35-50 mu m in minimum thickness due to the gentle slope shape of the back surface of the wafer or the stress buffering function of the polyimide, the lithography process of a back surface element and the processes of various ion implantation, dust removal, cleaning and laser annealing can be smoothly completed on the back surface, the process can be operated in the existing equipment, the equipment is not required to be upgraded or newly purchased, and the process cost is reduced.
The purpose of the invention can be realized by the following technical scheme:
a process for printing ultra-thin large-area solder balls by using polyimide comprises the following steps:
s1, completing the wafer contact hole of the MOSFET/IGBT which completes the front ILD process, filling by W-CVD and forming a plug by CMP planarization, continuously using Ti/Ni/Cu UBM metal to communicate the contact hole when the contact size is large, and generating a sputtering layer on the surface of the wafer;
s2, performing photolithography process on the wafer to form UBM PAD and a photoresist layer, wet etching to remove the metal stack outside the photoresist layer, and forming UBM PAD region before solder ball printing;
s3, coating polyimide on the front surface, performing photolithography to form a second window covering the edge of the UBM PAD and exposing the middle of the UBM for large-area connection solder ball printing;
s4, completing the bonding/curing of the polyimide, wherein the bonding/curing process is carried out at a temperature of more than 400 ℃ and the heating time is 1-2 h;
s5, turning the wafer, grinding and etching to form the back wafer with ultrathin gentle slope edge;
s6, performing the photolithography process of the wafer back surface element, ion implantation, ash removal, cleaning and laser annealing;
s7, after the back component process is finished, making the polyimide coating thick film coating on the back, baking within 300 ℃ without complete bonding/curing;
s8, turning the wafer to the front side, and making a thick film photoresist pattern at the opening of the UBM PAD;
s9, removing the light resistance after the first window is filled with the solder paste, spraying the soldering flux, and heating and refluxing to form the solder ball;
s10, after the front surface of the wafer is welded, the wafer is turned over to the back surface of the wafer, the polyimide coating film on the back surface is removed, the back surface of the wafer is cleaned, and the insulating layer is removed;
s11, back side metal deposition process/metal sputtering process is performed.
Further, in the step S5, the wafer has a middle thickness of 50-150um and an edge thickness of 200-400 um; reduced to a minimum thickness of between 35-50 um.
Further, in the step S7, the thick polyimide 4 coating film is greater than 20 um.
In step S10, the polyimide coating film on the back surface is removed by O2plasma and an organic solvent.
Further, in step S10, the polyimide coating film on the back surface is removed by a developing solution after blanket exposure.
The invention has the beneficial effects that:
1. compared with a glass carrier, the photosensitive and stress buffering function of the polyimide film is assisted to better complete wafer grinding, etching and micro-lithography processes, so that the process difficulty is reduced;
2. the back of the wafer is in a gentle slope shape or has the stress buffering function of polyimide, so that the thickness of the wafer can be reduced to 35-50 mu m;
3. the back surface of the invention can smoothly complete the micro-image process of the back surface element and the processes of various ion implantation, ash removal, cleaning and laser annealing, can be operated in the prior equipment, does not need equipment upgrading and reconstruction or other new purchase, and reduces the process cost.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a side view of a partial cross-sectional structure of an ultra-thin large area solder ball printing process using polyimide according to the present invention;
FIG. 2 is an enlarged schematic side view of a solder ball printing process for ultra-thin large area using polyimide according to the present invention.
1 wafer, 2 sputtering layers, 3 photoresist layers, 4 polyimide, 5 first windows, 6UBM PAD, 7 solder balls, 8 solder paste, 9 insulating layers and 10 second windows.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "opening," "upper," "lower," "thickness," "top," "middle," "length," "inner," "peripheral," and the like are used in an orientation or positional relationship that is merely for convenience in describing and simplifying the description, and do not indicate or imply that the referenced component or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the present invention.
A process for printing ultra-thin large-area solder balls by using polyimide comprises the following steps as shown in figures 1 and 2:
s1, completing the contact hole of the wafer 1 of the MOSFET or IGBT which completes the front ILD process, filling by W-CVD and forming a plug by CMP planarization, when the contact size is larger, directly and continuously using Ti/Ni/Cu UBM metal to connect the contact hole, and generating a sputtering layer 2 on the surface of the wafer 1;
s2, the wafer 1 is carried out the photolithography process to form UBM PAD 6 and the photoresist layer 3, as shown in the figure 1 and the figure 2, the wet etching removes the metal stacking outside the photoresist, the UBM PAD 6 area before the solder ball printing is formed;
s3, coating polyimide 4 on the front surface, and performing photolithography to form a second window 10 covering the edge of the UBM PAD 6 and exposing the middle large-area connection solder ball printing of the UBM;
s4, completing the bonding/curing of the polyimide 4, wherein the bonding/curing process is carried out at a temperature of more than 400 ℃ and the heating time is 1-2 h;
s5, turning the wafer 1, grinding and etching to form the back wafer with the ultrathin gentle slope edge, the middle 50-150um, the edge 200-400 um; reducing to the minimum thickness of 35-50 um;
s6, performing the photolithography process of the back device on the back surface of the wafer 1, ion implantation, ash removal, cleaning and laser annealing;
s7, after the back element process is completed, coating the polyimide 4 coating thick film (>20um) on the back, baking within 300 ℃ without complete bonding/solidification;
s8, turning the wafer 1 to the front side, and making a thick film photoresist pattern at the opening of the UBM PAD 6;
s9, after the solder paste 8 is printed and filled into the first windowing 5, removing the light resistance, then spraying the soldering flux, and heating and refluxing to form the solder ball 7;
s10, after the front surface of the wafer 1 is welded, the wafer is turned over to the back surface of the wafer, the polyimide 4 coating film on the back surface is removed, (O2 plasma and organic solvent are used for removing/the developing solution is used for removing after full exposure), the back surface of the wafer is cleaned, and the insulating layer 9 is removed;
s11, a back side metal deposition process (such as Ti/Ni/Ag) or a metal sputtering process (such as Ti/Ni V/Ag/Al) is performed (different back side metal processes are selected depending on the device and module design).
Example 1
A process for printing ultra-thin large-area solder balls by using polyimide comprises the following steps:
s1, completing the contact hole of the wafer 1 of the MOSFET or IGBT which completes the front ILD process, filling by W-CVD and forming a plug by CMP planarization, when the contact size is larger, directly and continuously using Ti/Ni/Cu UBM metal to connect the contact hole, and generating a sputtering layer 2 on the surface of the wafer 1;
s2, the wafer 1 is carried out the photolithography process to form UBM PAD 6 and the photoresist layer 3, as shown in the figure 1 and the figure 2, the wet etching removes the metal stacking outside the photoresist, the UBM PAD 6 area before the solder ball printing is formed;
s3, coating polyimide 4 on the front surface, and performing photolithography to form a second window 10 covering the edge of the UBM PAD 6 and exposing the middle large-area connection solder ball printing of the UBM;
s4, completing the bonding/curing of the polyimide 4, wherein the bonding/curing process is carried out at a temperature of more than 400 ℃ and the heating time is 1-2 h;
s5, turning the wafer 1, grinding and etching to form the back wafer with the ultrathin gentle slope edge, the middle 50-150um, the edge 200-400 um; reducing to the minimum thickness of 35-50 um;
s6, performing the photolithography process of the back device on the back surface of the wafer 1, ion implantation, ash removal, cleaning and laser annealing;
s7, after the back element process is completed, coating the polyimide 4 coating thick film (>20um) on the back, baking within 300 ℃ without complete bonding/solidification;
s8, turning the wafer 1 to the front side, and making a thick film photoresist pattern at the opening of the UBM PAD 6;
s9, after the solder paste 8 is printed and filled into the first windowing 5, removing the light resistance, then spraying the soldering flux, and heating and refluxing to form the solder ball 7;
s10, after the front side of the wafer 1 is welded, the wafer is turned over to the back side of the wafer, the polyimide 4 coating film on the back side is removed, O2plasma and an organic solvent are used for removing, the back side of the wafer is cleaned, and the insulating layer 9 is removed;
s11, back side metal deposition process (such as Ti/Ni/Ag) is performed.
Example 2
A process for printing ultra-thin large-area solder balls by using polyimide comprises the following steps:
s1, completing the contact hole of the wafer 1 of the MOSFET or IGBT which completes the front ILD process, filling by W-CVD and forming a plug by CMP planarization, when the contact size is larger, directly and continuously using Ti/Ni/Cu UBM metal to connect the contact hole, and generating a sputtering layer 2 on the surface of the wafer 1;
s2, the wafer 1 is carried out the photolithography process to form UBM PAD 6 and the photoresist layer 3, as shown in the figure 1 and the figure 2, the wet etching removes the metal stacking outside the photoresist, the UBM PAD 6 area before the solder ball printing is formed;
s3, coating polyimide 4 on the front surface, and performing photolithography to form a second window 10 covering the edge of the UBM PAD 6 and exposing the middle large-area connection solder ball printing of the UBM;
s4, completing the bonding/curing of the polyimide 4, wherein the bonding/curing process is carried out at a temperature of more than 400 ℃ and the heating time is 1-2 h;
s5, turning the wafer 1, grinding and etching to form the back wafer with the ultrathin gentle slope edge, the middle 50-150um, the edge 200-400 um; reducing to the minimum thickness of 35-50 um;
s6, performing the photolithography process of the back device on the back surface of the wafer 1, ion implantation, ash removal, cleaning and laser annealing;
s7, after the back element process is completed, coating the polyimide 4 coating thick film (>20um) on the back, baking within 300 ℃ without complete bonding/solidification;
s8, turning the wafer 1 to the front side, and making a thick film photoresist pattern at the opening of the UBM PAD 6;
s9, after the solder paste 8 is printed and filled into the first windowing 5, removing the light resistance, then spraying the soldering flux, and heating and refluxing to form the solder ball 7;
s10, after the front surface of the wafer 1 is welded, the wafer is turned over to the back surface of the wafer, the polyimide 4 coating film on the back surface is removed, the wafer is removed by developing solution after full exposure, the back surface of the wafer is cleaned, and the insulating layer 9 is removed;
s11, a back side metal sputtering process (such as Ti/Ni V/Ag/Al) is performed.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (5)
1. A process for printing ultra-thin large-area solder balls by using polyimide is characterized by comprising the following steps:
s1, completing the wafer contact hole of the MOSFET/IGBT which completes the front ILD process, filling by W-CVD and forming a plug by CMP planarization, continuously using Ti/Ni/Cu UBM metal to communicate the contact hole when the contact size is large, and generating a sputtering layer on the surface of the wafer;
s2, performing photolithography process on the wafer to form UBM PAD and a photoresist layer, wet etching to remove the metal stack outside the photoresist layer, and forming UBM PAD region before solder ball printing;
s3, coating polyimide on the front surface, performing photolithography to form a second window covering the edge of the UBM PAD and exposing the middle of the UBM for large-area connection solder ball printing;
s4, completing the bonding/curing of the polyimide, wherein the bonding/curing process is carried out at a temperature of more than 400 ℃ and the heating time is 1-2 h;
s5, turning the wafer, grinding and etching to form the back wafer with ultrathin gentle slope edge;
s6, performing the photolithography process of the wafer back surface element, ion implantation, ash removal, cleaning and laser annealing;
s7, after the back component process is finished, making the polyimide coating thick film coating on the back, baking within 300 ℃ without complete bonding/curing;
s8, turning the wafer to the front side, and making a thick film photoresist pattern at the opening of the UBM PAD;
s9, removing the light resistance after the first window is filled with the solder paste, spraying the soldering flux, and heating and refluxing to form the solder ball;
s10, after the front surface of the wafer is welded, the wafer is turned over to the back surface of the wafer, the polyimide coating film on the back surface is removed, the back surface of the wafer is cleaned, and the insulating layer is removed;
s11, back side metal deposition process/metal sputtering process is performed.
2. The ultra-thin large area solder ball printing process using polyimide as claimed in claim 1, wherein in step S5, the wafer has a center of 50-150 μm and an edge of 200-400 μm; reduced to a minimum thickness of between 35-50 um.
3. The ultra-thin large area solder ball printing process using polyimide as claimed in claim 1, wherein the thick film of polyimide 4 coating layer in step S7 is larger than 20 um.
4. The ultra-thin large area solder ball printing process using polyimide as claimed in claim 1, wherein the step S10, removing the polyimide coating on the back side is performed by O2plasma and organic solvent.
5. The ultra-thin large area solder ball printing process using polyimide as claimed in claim 1, wherein the step S10 is performed by removing the polyimide coating film on the back side by a full exposure and then removing the polyimide coating film by a developing solution.
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| CN111599754A (en) * | 2020-06-19 | 2020-08-28 | 绍兴同芯成集成电路有限公司 | Ultrathin wafer processing technology |
| CN111668125A (en) * | 2020-06-19 | 2020-09-15 | 绍兴同芯成集成电路有限公司 | Wafer tin ball printing process |
| CN111710647A (en) * | 2020-07-06 | 2020-09-25 | 绍兴同芯成集成电路有限公司 | Process for electroplating thick copper film on two sides of window opening |
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| US6426283B1 (en) * | 2000-12-01 | 2002-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for bumping and backlapping a semiconductor wafer |
| CN107371338B (en) * | 2016-05-13 | 2019-08-20 | 苏州卫鹏机电科技有限公司 | A kind of preparation method of the printed wiring board of ultra-thin metal layer |
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| CN111599754A (en) * | 2020-06-19 | 2020-08-28 | 绍兴同芯成集成电路有限公司 | Ultrathin wafer processing technology |
| CN111668125A (en) * | 2020-06-19 | 2020-09-15 | 绍兴同芯成集成电路有限公司 | Wafer tin ball printing process |
| CN111710647A (en) * | 2020-07-06 | 2020-09-25 | 绍兴同芯成集成电路有限公司 | Process for electroplating thick copper film on two sides of window opening |
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