CN112216785B - Composite electrode, method for manufacturing composite electrode, and interdigital transducer - Google Patents
Composite electrode, method for manufacturing composite electrode, and interdigital transducer Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 20
- 239000007769 metal material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 9
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000001704 evaporation Methods 0.000 claims description 25
- 230000008020 evaporation Effects 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 238000013508 migration Methods 0.000 description 10
- 230000005012 migration Effects 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910013336 LiNiO3 Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention proposes a composite electrode having a first layer (2) of a metallic material plated on a substrate (1) of a pressed sheet; a second layer (3) of a tungsten-cobalt alloy material plated on the first layer (2); and a third layer (4) made of a metal material plated on the second layer (3). The composite electrode obtained by the method can improve the adhesion of the first layer (2) and the tabletting substrate (1) and is beneficial to enhancing the interface bonding strength.
Description
Technical Field
The invention relates to a composite electrode and a manufacturing method thereof, in particular to an interdigital transducer which is suitable for independent modules, integrated modules and the like of radio frequency transceiving front ends of mobile phones, wireless base stations and the like.
Background
The current filter field includes three major technologies, surface acoustic wave filter (SAW), bulk acoustic wave filter (BAW) and film bulk acoustic wave Filter (FBAR). Among them, the low and middle frequency bands mainly include the SAW filter, and the high power tolerance of the SAW filter is more and more required. In the fabrication of SAW filters, the conversion of electrical and acoustic signals is accomplished by interdigital transducers. Aluminum, copper or aluminum-copper alloy is commonly used as a constituent material of an interdigital transducer because of its high electrical conductivity, low acoustic impedance and easy processing.
In a conventional method for manufacturing an interdigital transducer, a Ti metal film is generally vapor-deposited on the surface of a LiNbO3 or LiTaO3 piezoelectric wafer, and then an Al metal film is directly vapor-deposited, thereby obtaining an interdigital electrode having a metal film structure in the interdigital transducer. However, the interdigital electrode manufactured by the method is easy to warp and even peel off under the application condition of high power or high frequency, so that the application under extreme conditions cannot be met. In addition, the conventional aluminum electrode material is deposited by electron beam evaporation. Because the self-diffusion coefficient of aluminum is high, aluminum atoms can migrate along a grain boundary under the action of high-frequency alternating stress, and the aluminum film has defects such as holes and the like, so that the device fails.
In contrast, patent document 1 discloses a multilayer metal electrode structure of an interdigital transducer, and as shown in fig. 4, a multilayer metal or alloy is deposited on the surface of a lithium niobate/lithium tantalate (LiNiO3/LiTaO3) piezoelectric wafer to improve the electromigration resistance and power resistance of the device. Specifically, Ti is usually used as a primer layer, so that the toughness of the metal film is improved, and stress cracking is reduced; and a layer of Ni metal with low self-diffusion coefficient is plated on the Ti metal film, so that the migration of Al atoms on the upper layer can be effectively inhibited, and the application of the device under the conditions of high power and high frequency is met.
It is thus understood that, in the conventional multilayer metal electrode structure, in order to improve the power resistance of the device, the emphasis is on suppressing the migration of Al atoms and preventing defects such as voids in the Al film layer, and therefore, the interface bonding strength between the metal films is not considered in the design of selecting the multilayer metal film. For example, in patent document 1, stability at high frequencies between metal electrode multilayers of a device is emphasized, but in practice, if interface bonding between metal layers is not ideal, failure of the device is more likely to result.
However, patent document 1 has the following problems: ti atoms are generally in a close-packed hexagonal structure (HCP) structure at normal temperature, Ni atoms are in a face-centered cubic lattice (FCC) structure, atomic arrangement of two phases at a phase interface is greatly different, and only a non-coherent interface can be formed, which is not favorable for the interface bonding strength of two layers of metal films; in addition, the lithium niobate/lithium tantalate piezoelectric wafer under high-frequency operation has large stress, and the metal layer may fall off under the action of alternating stress.
As mentioned above, a Ti metal layer is plated on the surface of the piezoelectric material to be used as a bottom layer, and then a Ni/Nb metal layer with high melting point and high diffusion coefficient is plated between the Ti metal film and the Al metal film. Therefore, the multilayer metal electrode structure of the high-frequency SAW filter with stress migration resistance and low resistance is obtained, and the high-power tolerance of the SAW filter can be remarkably improved. However, the method for manufacturing the multilayer metal electrode structure disclosed in patent document 1 has a problem that the alloy film process is complicated and the durability is still not high enough.
Documents of the prior art
Patent document 1: chinese utility model patent CN206272582U
Disclosure of Invention
Technical problem to be solved by the invention
The invention is made in view of the problems that the existing alloy film with a multi-layer metal electrode structure is complex in process and still not high in tolerance, and aims to provide a composite electrode, a manufacturing method of the composite electrode and an interdigital transducer, which can effectively inhibit the interface migration of aluminum atoms, prevent an aluminum metal film layer from generating holes, and increase the compactness of the film, so that the aluminum metal film has better stress migration resistance and low resistance performance.
It is another object of the present invention to provide a composite electrode, a method of manufacturing the composite electrode, and an interdigital transducer, in which the toughness of the primer layer is improved, and the primer layer and the adjacent metal film layer are dissolved and alloyed, thereby forming a bonding interface, thereby further enhancing the interface bonding strength between the plurality of metal films.
Technical scheme for solving technical problem
In a first aspect of the present invention, there is provided a composite electrode having: a first layer of a metallic material plated on the base of the preform; a second layer of a tungsten-cobalt alloy material plated on the first layer; and a third layer of a metallic material plated on the second layer.
Further, the first layer is composed of a chromium material.
Further, the third layer is composed of aluminum, copper or aluminum copper alloy material.
Further, the base of the pressed sheet is a piezoelectric wafer composed of lithium niobate/lithium tantalate.
Further, for the first layer, the evaporation rate is 1-10A/s and the deposition thickness is 10-100 nm.
Further, for the second layer, the evaporation rate is 1-10A/s and the deposition thickness is 10-100 nm.
Further, for the third layer, the evaporation rate is 1-10A/s and the deposition thickness is 500-1000 nm.
Further, the vacuum degree is 2X 10 in the background-5～5×10-5And forming the first layer, the second layer, and the third layer by surface evaporation under Pa.
In the second aspect of the present invention, there is also provided an interdigital transducer in which a plurality of composite electrodes described in the first aspect of the present invention are fixed on a sheeting substrate, and the distance between adjacent composite electrodes is a fixed value.
In a third aspect of the present invention, there is also provided a method of manufacturing a composite electrode, comprising: a first layer forming step of plating a first layer made of a metal material on a preform substrate; a second layer forming step of plating a second layer made of a tungsten-cobalt alloy material on the first layer; and a third layer forming step of plating a third layer made of a metal material on the second layer.
Further, the first layer is composed of a chromium material.
Further, the third layer is composed of aluminum, copper or aluminum copper alloy material.
Further, the base of the pressed sheet is a piezoelectric wafer composed of lithium niobate/lithium tantalate.
Further, for the first layer, the evaporation rate is 1-10A/s and the deposition thickness is 10-100 nm.
Further, for the second layer, the evaporation rate is 1-10A/s and the deposition thickness is 10-100 nm.
Further, for the third layer, the evaporation rate is 1-10A/s and the deposition thickness is 500-1000 nm.
Further, the vacuum degree is 2X 10 in the background-5～5×10-5And forming the first layer, the second layer, and the third layer by surface evaporation under Pa.
Effects of the invention
According to the invention, the second layer is formed by using the tungsten-cobalt alloy material with a low self-diffusion coefficient, so that the interface migration of aluminum atoms can be effectively inhibited, the aluminum metal film layer is prevented from generating holes, and the compactness of the film is increased, so that the aluminum metal film has good stress migration resistance and low resistance.
Furthermore, the invention uses the chromium metal film with better toughness as the priming layer, and simultaneously enables the chromium atoms and the cobalt atoms of the previous layer to diffuse into the cobalt atoms at the interface of chromium/cobalt at high temperature, dissolve and alloy to form a reaction bonding interface, thereby being beneficial to enhancing the interface bonding strength among the multiple layers of metal films.
Drawings
Fig. 1 is a diagram showing a basic structure of a composite electrode according to embodiment 1 of the present invention.
Fig. 2 is a diagram showing a basic structure of an interdigital transducer having a composite electrode according to embodiment 1 of the present invention, according to embodiment 2.
Fig. 3 is a flowchart showing a method for manufacturing a composite electrode according to embodiment 3 of the present invention.
Fig. 4 is a diagram showing a basic structure of a conventional multilayer metal electrode structure.
Detailed Description
The composite electrode, the method for manufacturing the composite electrode, and the interdigital transducer according to the present invention will be described in more detail with reference to the accompanying drawings by way of specific embodiments. Furthermore, the following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
In the following description, the same or similar reference numerals are used for the same or similar parts. In this connection, it should be noted that the drawings are only schematic views, and the relationship between the thickness and the planar size, the ratio of the thicknesses of the respective layers, and the like are different from the actual case. Therefore, for a specific thickness or size, reference should be made to the following description for judgment.
Further, in the description of the present invention, it is to be noted that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only simplified descriptions for convenience of describing the present invention, and do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, cannot be construed as a limitation of the present invention.
[ basic Structure of composite electrode ]
Fig. 1 is a diagram showing a basic structure of a composite electrode according to embodiment 1 of the present invention.
Referring to fig. 1, the composite electrode of the present invention has a first layer 2 plated on a wafer substrate 1; a second layer 3 plated on the first layer 2; a third layer 4 plated on the second layer 3. Wherein the first layer 2 is made of a metal material, the second layer 3 is made of a tungsten-cobalt alloy material, and the third layer 4 is made of a metal material. The base wafer 1 is usually a piezoelectric wafer made of lithium niobate/lithium tantalate (LiNiO3/LiTaO 3).
As for the materials of the first to third layers, the first layer 2 is preferably composed of a chromium material, and the third layer 3 is preferably composed of aluminum, copper, or an aluminum-copper alloy material.
With respect to the deposition thickness of each of the first to third layers, the first layer 2 is preferably formed to be 10-100 nm, the second layer 3 is preferably formed to be 10-100 nm, and the third layer 4 is preferably formed to be 500-1000 nm.
Regarding the evaporation rates of the first to third layers, the evaporation rate of the first layer 2 is preferably 1 to 10A/s, the evaporation rate of the second layer 3 is preferably 1 to 10A/s, and the evaporation rate of the third layer 4 is preferably 1 to 10A/s.
As for the degree of vacuum at the time of vapor deposition, the degree of vacuum at the time of the evaporation is preferably 2X 10-5～5×10-5The first layer 2, the second layer 3, and the third layer 3 were formed by surface deposition under Pa.
According to the composite electrode of embodiment 1, the material of the second layer 3 is a tungsten-cobalt alloy, and the second layer 3 and the third layer 4 are formed into a Co — Al — W high-temperature alloy layer by alloy atom diffusion at the interface, and this alloy layer has high strength and toughness, and effectively enhances the interface bonding strength between the second layer 3 and the third layer 4, so that the effect of contributing to the improvement of the texture of the third layer made of a conductive material (e.g., an aluminum material) can be achieved.
In addition, according to the composite electrode of embodiment 1, since the first layer 2 is made of a chromium material having high toughness, the first layer 2 can improve adhesion between the electrode metal and the tablet substrate 1, and at the same time, the first layer 2 and the second layer 3 can form an alloyed layer at the interface by a bonding method in which Co and Cr are element-exchanged by diffusion, and therefore, an effect advantageous for enhancing the interface bonding strength can be achieved.
[ interdigital transducers ]
Fig. 2 is a diagram showing a basic structure of an interdigital transducer having a composite electrode according to embodiment 1 of the present invention, according to embodiment 2.
As shown in fig. 2, a plurality of composite electrodes are fixed to a sheet substrate 1, and the distance between each adjacent composite electrode is set to a fixed value, thereby obtaining an interdigital transducer 10 according to the present invention.
Wherein each of the plurality of composite electrodes has a first layer 2 plated on a base 1 of a preform as described in embodiment 1; a second layer 3 plated on the first layer 2; a third layer 4 plated on the second layer 3. Wherein the first layer 2 is made of a metal material, the second layer 3 is made of a tungsten-cobalt alloy material, and the third layer 4 is made of a metal material. The base wafer 1 is usually a piezoelectric wafer made of lithium niobate/lithium tantalate (LiNiO3/LiTaO 3).
It can be seen that since the grains of the first layer 2 and the second layer 3 are fine, the residual stress is low, and the toughness is good, and since the metal Co in the second layer 3 and the metal Cr in the first layer 2 have a good interface diffusion effect, the interface bonding strength can be effectively enhanced. The metal Al in the third layer 4 of the uppermost layer has higher compactness and stronger texture and has better conductivity, and meanwhile, a Co-Al-W alloy layer with excellent performance can be formed at the interface between the second layer 3 and the third layer 4, so that the interface bonding strength is effectively enhanced.
Therefore, the multiple composite structure electrodes can have good stress migration resistance and low resistance performance at the same time, the small insertion loss and high quality factor value of the device are achieved, meanwhile, the interface bonding strength among the interfaces of the multiple layers of metal films is good, and the use of a high-frequency SAW filter can be met.
[ method for producing composite electrode ]
Fig. 3 is a flowchart showing a method for manufacturing a composite electrode according to embodiment 3 of the present invention.
As shown in fig. 3, firstly, in step ST1, the piezoelectric wafer to be plated is subjected to acetone and isopropyl alcohol (IPA) solution, then is cleaned by deionized water and is dried, and then the obtained sample of the piezoelectric wafer (i.e., the wafer substrate) is placed in an electron beam evaporation coater, and surface evaporation method (e.g., electron beam evaporation method) is used, preferably, the background vacuum degree is 2 × 10-5～5×10-5Vapor deposition was performed under Pa.
Then, in step ST2, the first layer 2 is formed by using an evaporation rate of 1-10A/s, and the deposition thickness is preferably 10-100 nm.
Then, in step ST3, the second layer 3 is formed by using an evaporation rate of 1-10A/s, and the deposition thickness is preferably 10-100 nm.
Next, in step ST4, the third layer 4 is formed at an evaporation rate of 1 to 10A/s, and preferably at a deposition thickness of 500 to 1000 nm.
Finally, in step ST5, after the completion of the vapor deposition, the composite electrode sample was taken out from the electron beam evaporation coater and peeled off in an acetone solution, and the composite electrode was finally completed.
According to the composite electrode obtained by the method, the first layer 2 is made of chromium material with good toughness, so that the adhesion force between the electrode metal and the tablet substrate 1 can be improved by the first layer 2, and meanwhile, an alloying layer is formed at the interface between the first layer 2 and the second layer 3 in a bonding mode that element exchange occurs between Co and Cr through diffusion, so that the effect of being beneficial to enhancing the interface bonding strength can be realized.
Finally, it should be noted that the above-mentioned embodiments are only illustrative of the present invention and should not be construed as limiting the invention. While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Industrial applicability of the invention
The composite electrode, the manufacturing method of the composite electrode and the interdigital transducer can be suitable for independent modules, integrated modules and the like of radio frequency transceiving front ends of mobile phones, wireless base stations and the like. Therefore, the interface migration of aluminum atoms in the conductive material can be effectively inhibited, the aluminum metal film layer is prevented from generating holes, the compactness of the film is improved, the aluminum metal film has better stress migration resistance and low resistance, and the interface bonding strength among multiple layers of metal films can be further enhanced.
Description of the reference symbols
1, pressing a substrate into a tablet,
2 a first layer of a first set of layers,
3 a second layer of a second,
4 a third layer of a second material,
a 10-interdigital transducer.
Claims (11)
1. A composite electrode, comprising:
a first layer of a metallic material plated on the base of the preform;
a second layer of a tungsten-cobalt alloy material plated on the first layer; and
a third layer of a metallic material plated on the second layer,
the first layer is composed of a chromium material,
the third layer is made of aluminum, copper or aluminum-copper alloy material,
the tabletting substrate is a piezoelectric wafer composed of lithium niobate/lithium tantalate,
the first layer and the second layer form an alloying layer at an interface by diffusion.
2. The composite electrode of claim 1,
for the first layer, the evaporation rate is
And the deposition thickness is 10-100 nm.
3. The composite electrode of claim 1,
for the second layer, the evaporation rate is
And the deposition thickness is 10-100 nm.
4. The composite electrode of claim 1,
for the third layer, the evaporation rate is
And the deposition thickness is 500-1000 nm.
5. A composite electrode according to any one of claims 1 to 4,
vacuum degree of 2X 10 in background-5～5×10-5And forming the first layer, the second layer, and the third layer by surface evaporation under Pa.
6. An interdigital transducer is characterized in that,
fixing a plurality of composite electrodes according to any one of claims 1 to 5 on a sheeting substrate, and the distance between adjacent composite electrodes is a fixed value.
7. A method of manufacturing a composite electrode, comprising:
a first layer forming step of plating a first layer made of a metal material on a preform substrate;
a second layer forming step of plating a second layer made of a tungsten-cobalt alloy material on the first layer; and
a third layer forming step of plating a third layer composed of a metal material on the second layer,
the first layer is composed of a chromium material,
the third layer is made of aluminum, copper or aluminum-copper alloy material,
the tabletting substrate is a piezoelectric wafer composed of lithium niobate/lithium tantalate,
the first layer and the second layer form an alloying layer at an interface by diffusion.
8. The method of manufacturing a composite electrode according to claim 7,
for the first layer, the evaporation rate is
And the deposition thickness is 10-100 nm.
9. The method of manufacturing a composite electrode according to claim 7,
for the second layer, the evaporation rate is
And the deposition thickness is 10-100 nm.
10. The method of manufacturing a composite electrode according to claim 7,
for the third layer, the evaporation rate is
And the deposition thickness is 500-1000 nm.
11. The method of manufacturing a composite electrode according to any one of claims 7 to 10,
vacuum degree of 2X 10 in background-5～5×10-5And forming the first layer, the second layer, and the third layer by surface evaporation under Pa.
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| JP3926633B2 (en) * | 2001-06-22 | 2007-06-06 | 沖電気工業株式会社 | SAW device and manufacturing method thereof |
| CN100527615C (en) * | 2004-04-20 | 2009-08-12 | 株式会社东芝 | Film bulk acoustic-wave resonator and method for manufacturing the same |
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| JP5541450B2 (en) * | 2010-03-16 | 2014-07-09 | セイコーエプソン株式会社 | Method for manufacturing piezoelectric element |
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| JP6986376B2 (en) * | 2017-06-27 | 2021-12-22 | ＮＤＫ ＳＡＷ ｄｅｖｉｃｅｓ株式会社 | Surface acoustic wave element and its manufacturing method |
| DE102018109849B4 (en) * | 2018-04-24 | 2020-03-05 | RF360 Europe GmbH | Electroacoustic resonator and method for forming the same |
| JP2020145567A (en) * | 2019-03-06 | 2020-09-10 | 株式会社村田製作所 | Acoustic wave device |
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