CN112203778B - 气缸阀以及用于抑制污染物在气缸和气缸阀中形成的方法 - Google Patents
气缸阀以及用于抑制污染物在气缸和气缸阀中形成的方法 Download PDFInfo
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Abstract
公开了一种用于抑制在含一氧化碳的气缸中形成羰基化合物的方法,其中该气缸与阀门组件流体连通,其中该阀门组件通过螺纹组件连接到该气缸中的螺纹开口,该方法包括用氢化非晶硅化合物涂覆该阀门组件的内部部件和外部部件,该内部部件和外部部件选自由入口端口、出口端口、隔膜和下主轴构成的组。本发明还公开了一种包括经涂覆的内部部件和外部部件的阀门组件。
Description
相关申请的交叉引用
本申请要求于2018年6月22日提交的美国临时申请序列号62/688,588的优先权。
背景技术
一氧化碳具有多种工业用途。一氧化碳的一个难点在于它可在与特定金属接触时形成羰基金属。例如,铬、钼、铁、镍和钴均可与一氧化碳反应并形成它们各自的羰基化合物。
该问题会在高压缸中加剧。当在环境温度和约200巴左右的高压下暴露于钢和不锈钢时,铁和(具体地)镍两者将形成低水平的羰基。
虽然一氧化碳可以高压和高纯度储存在铝缸中,但是某些阀机构可含有铁和镍,该铁和镍可被引入气缸中,从而与其中存在的一氧化碳反应。
一种建议性的解决方案是用黄铜制造阀,从而消除可与一氧化碳反应的铁和镍。然而,鉴于材料的柔软性和变形的可能性(其可导致阀和其安装到其中的气缸之间的不足以气密的连接),黄铜的阀可能难以使用。铜合金在半导体应用中通常是不可接受的。在许多情况下,气体的消耗将黄铜或其他铜合金从构造的潜在材料中排除。
另外,无论阀是由黄铜还是不锈钢制成,阀的内部均由铁和镍合金制成。
本发明是一种用于抑制羰基在一氧化碳气缸中形成的方法。
发明内容
本发明提供了一种用于抑制在含一氧化碳的封闭气缸中形成羰基化合物的方法,其中该气缸与阀门组件流体连通,其中该阀门组件通过螺纹组件连接到该气缸中的螺纹开口,该方法包括用氢化非晶硅涂覆该阀门组件的内部部件和外部部件,该内部部件和外部部件选自由入口端口、出口端口和下主轴构成的组。
在另选的实施方案中,本发明提供了一种用于抑制在阀门组件中形成羰基化合物的方法,其中该阀门组件与一氧化碳接触,该方法包括用氢化非晶硅涂覆该阀门组件的内部部件和外部部件,该内部部件和外部部件选自由入口端口、出口端口和下主轴构成的组。
出于本发明的目的,该阀门组件的内部部件和外部部件(即入口端口、出口端口、隔膜和下主轴)涂覆有氢化非晶硅以提供惰性屏障。可用官能团对氢化非晶硅化合物进行进一步增强,从而为不同的气体类型提供不同的抗腐蚀特性。官能化型式可以是以商标Dursan购自SilcoTek。非官能化硅化合物可以商标Silcolloy购自SilcoTek。
出于本发明的目的,经由化学气相沉积工艺将具有或不具有官能团的氢化非晶硅涂覆在待保护的阀门组件的表面上。
通常,在将螺纹组件插入到气缸中的螺纹开口中之前,用氢化非晶硅化合物涂覆阀门组件的内部部件和外部部件。
在本发明的另一个实施方案中,阀门组件的内部部件和外部部件还包括隔膜,其中该隔膜可涂覆有氢化非晶硅化合物。
在本发明的另一个实施方案中,公开了一种阀门组件,该阀门组件包括:阀体,该阀体具有穿过其中的流体通道,该流体通道具有入口端口和出口端口;阀室,该阀室与阀体中的入口端口和出口端口流体连通;第一阀,该第一阀用于打开和关闭该流体通道以控制通过该流体通道的气体流动;与该流体通道流体连通的螺纹组件;与该出口端口连通的螺纹组件,其中该阀包括螺杆形式的阀构件,该螺杆与阀座接触,在阀关闭位置中该杆接合到该阀座上,其中当该杆未接合该阀座时,该阀允许所述气体从该入口端口穿过该流体通道到达该出口端口,其中该阀座、该入口端口和该出口端口涂覆有惰性屏障。
所形成的羰基化合物通常是通过与金属和一氧化碳直接接触而形成的那些羰基化合物。出于本发明的目的,这些是羰基镍、羰基铁和羰基钴,诸如Fe(CO)5、Ni(CO)4。其他羰基化物可包括Cr(CO)6、W(CO)6和MO(CO)6。
阀将通常由不锈钢制成。阀还可包含高镍耐腐蚀合金,诸如可以商品名Hasetelloy and Monel获得的那些。在一些情况下,存在纯镍部件。经润湿的部件(即接触一氧化碳的那些部件)是将被惰性屏障涂覆的部件,使得当一氧化碳位于气缸内时不与任何钢或不锈钢接触。
典型的气缸可具有也可与存在于气缸中的一氧化碳反应的镍、镍衬里、钢或不锈钢。使用铝作为气缸的构造材料可用来减少一氧化碳与气缸本身的反应;然而,当气缸阀关闭时,不锈钢阀或钢阀的使用仍将为一氧化碳提供反应性材料源。
化学气相沉积工艺通常在相对较低的温度进行,并且可具有或不具有等离子体以生成所形成的氢化非晶硅涂层。
可采用其他涂布技术,诸如等离子体增强化学气相沉积(PECVD)、热转化和电镀。
在其他实施方案中,其他氢化非晶硅涂层可包含不同的官能团。基础硅表面可由官能团改性,以防止在本来可存在于气缸中的高纯度气体产物中形成杂质。典型的官能团选自由以下项构成的组,该组包括-SiH3、-H、-OH、-CH3和-F。
使用惰性屏障的优点可被进一步扩展到用于高纯度一氧化碳气体的全递送系统,特别是用于半导体制造系统中。该全递送系统可包括气缸、气缸阀、压力调节器、质量流量控制器和递送加压不锈钢管路。
基于上文所述的化学性质,这些单独的单元操作均易受到羰基形成的影响,从而可用阻挡涂层进行处理以抑制独特组分的腐蚀。
通过化学气相沉积工艺用氢化非晶硅涂覆内部部件。在阀门组件连接到气缸之前,用氢化非晶硅涂覆内部部件。
入口端口、出口端口、隔膜和下主轴由选自铁和镍构成的组中的材料制成。
氢化非晶硅化合物还包含附加的官能团,其中该附加的官能团选自由氧和碳构成的组。
气缸由选自由以下项构成的组的材料制成,该组包括:铝、镍、镍衬里、钢和不锈钢。
附图说明
图1为可通过本发明的方法处理的阀门组件的示意图。
图2为阀剖面的示意图,示出了暴露于一氧化碳的阀的通路,以及施加了惰性屏障的阴影区域。
具体实施方式
阀门组件包括:阀体,所述阀体具有穿过其中的流体通道,所述流体通道具有入口端口和出口端口;阀室,所述阀室与所述阀体中的所述入口端口和所述出口端口流体连通,第一阀,所述第一阀用于打开和关闭所述流体通道以控制通过所述流体通道的气体流动;与所述流体通道流体连通的螺纹组件;与所述出口端口连通的螺纹组件,其中所述阀包括阀构件,所述阀构件具有下主轴、中主轴和螺杆形式的上主轴,所述螺杆与阀座和隔膜接触,在阀关闭位置中所述螺杆接合到所述阀座和所述隔膜上,其中当所述螺杆未接合所述阀座时,所述阀允许所述气体从所述入口端口穿过所述流体通道到达所述出口端口。
在图1中,示出了典型的阀门组件10。主体1是凹陷的,以允许适当的气体进入并穿过凹陷开口或入口端口20,并且从凹陷开口或出口端口25穿出。下主轴3与座盘保持器或阀座4和座盘2接触。隔膜5和5.1位于座盘保持器4与衬套7之间,以在阀门组件10应该关闭时协助阻挡气体通过。
入口端口20可通常被构造为装配并配合到气缸的顶部凹陷部中,使得当阀门组件10处于关闭位置时,来自未示出的气缸的气体流动至少传递到入口端口。
下主轴3与中主轴6接触。O形环13周向地位于中主轴6中的凹槽中,以抑制围绕中主轴6的气体通过。垫圈29与中主轴6物理地接触并且位于与上主轴9接触的中主轴6的顶部上。
压盖8被物理地安装在主体1内,并且被构造为通过同心顶部开口接纳上主轴9。衬套7位于压盖8中的凹槽内以抑制适当气体的通过。O形环28周向地位于压盖8中的凹槽中,以抑制围绕压盖8的气体通过。
中主轴6位于上主轴9中的凹陷部内。如图1所示,中主轴6在其顶部具有“T”形构件。该“T”形构件位于上主轴9中的凹陷部内,该凹陷部将允许上主轴9升高和降低,使得下部将使上主轴9的底部与中主轴6的“T”形构件接触。当阀10处于关闭位置时,将产生这种配置。上主轴9将在压盖8内上升并与垫圈29断开接触,从而允许气体流动。当通过适当的装置迫使中主轴6的“T”形构件向上时,上主轴9将接触垫圈29,从而打开气体流动。
中主轴6的“T”形构件与上主轴9中的开口之间的移动或间隙的量也将为用于移动上主轴9的装置中存在多少移动量提供限制,如下文进一步详述。
下主轴3、中主轴6和上主轴9包括阀构件或螺杆。
螺纹螺母组件30被设计为与主体1上的螺纹接触向下螺纹连接,以在螺纹螺母组件30接合时锁定压盖8。
球24位于上主轴9中的适当开口内并与主轴9的顶部接触。O形环12还围绕上主轴9定位在存在于压盖8中的凹槽中。
上主轴9在其顶部处安装到螺母11中。螺母11与安装在顶盖14中的手轮10接合。该顶盖允许使用者沿顺时针方向转动顶盖14以使上主轴9向下压入垫圈29中,从而关闭阀10。使用者还可以沿逆时针方向转动顶盖14,这将导致中主轴6接合到主轴9的球并且允许阀座4和座盘2上升离开入口端口20,从而打开阀并且允许气体流过开口20和25。
当螺杆未与阀座4接合时,气体穿过入口端口20到出口端口25。另选地,当螺杆接合阀座4时,气体从入口端口20到出口端口25的流动停止。
如图1所示,在流动情况期间,当阀打开时,开口20和25被存在于阀10所在的气缸中的气体明显润湿。该接触区域还将包括座盘保持器4(一直到由5和5.1表示的隔膜组件的底部)和下主轴组件3。阀门组件10的这些区域通常会包含铁或镍,并且通过涂覆这些区域,抑制羰基化合物的形成。在静态情况期间,当阀门组件10关闭时,只有开口20和下主轴组件3的底部将被气体润湿。对从气缸连接部到阀门组件的入口开口20以及用于输送气体的出口端口开口25进行涂覆。
阀门组件的这些区域在图2中进一步突出显示,该图是在本发明的方法中使用的典型阀的内部的剖面示意图。如上面关于图1的描述所指出的,从气缸连接部到阀门组件的入口端口、用于抽出一氧化碳的出口端口以及“经润湿的部件”都是可见的。下主轴组件和隔膜也已在图2中突出显示,原因在于阀门的这些部件可通过本发明的方法涂覆以抑制羰基化合物的形成。
在某些实施方案中,用于操作阀门组件以调节流体通道中的气体压力的压力调节器与该阀门组件流体连通。
直的氢化非晶硅可与气缸和阀门组件的正常使用一起使用。当采用除一氧化碳之外的其他腐蚀性气体时,可使用官能化型式的氢化非晶硅化合物。
当气缸由铝制成时,使用官能化型式是特别有用的,尽管铝不与一氧化碳反应,但其可与其它腐蚀性气体反应,因此涂覆铝气缸的内部将抑制除了会导致气体质量方面以及气缸和阀门组件的适当操作方面的问题的羰基化合物之外的其它反应产物的形成。
抑制羰基形成并使进入系统的杂质最小化的结果将允许最终用户(特别是在半导体制造设施中),在了解正在供应的产品将含有在填充时测量的万亿分之一水平的杂质并且在储存期间在气缸或阀内没有发生进一步的羰基形成的情况下,将气缸和阀布置替换到他们的操作中。
虽然已相对于本发明的具体实施方案本发明进行了描述,但显而易见的是,本发明的多个其它形式和修改对于本领域的技术人员来说将是显而易见的。本发明所附权利要求书通常应理解为涵盖本发明实质和范围内的所有此类明显形式和修改。
Claims (30)
1.一种用于抑制在含一氧化碳的封闭气缸中形成羰基化合物的方法,其中所述气缸与阀门组件流体连通,其中所述阀门组件通过螺纹组件连接到所述气缸中的螺纹开口,所述方法包括用氢化非晶硅化合物涂覆所述阀门组件的内部部件和外部部件,所述内部部件和所述外部部件选自由入口端口、出口端口和下主轴构成的组。
2.根据权利要求1所述的方法,其中通过化学气相沉积工艺用所述氢化非晶硅化合物涂覆所述内部部件。
3.根据权利要求1所述的方法,其中在将所述阀门组件连接到所述气缸之前,用所述氢化非晶硅化合物涂覆所述内部部件。
4.根据权利要求1所述的方法,其中所述入口端口、所述出口端口和所述下主轴由选自由铁和镍构成的组中的材料制成。
5.根据权利要求1所述的方法,其中所述内部部件和所述外部部件还包括隔膜。
6.根据权利要求1所述的方法,其中所述氢化非晶硅化合物还包含附加的官能团。
7.根据权利要求6所述的方法,其中所述附加的官能团选自由氧和碳构成的组。
8.根据权利要求1所述的方法,其中所述气缸由选自由以下项构成的组的材料制成:铝、镍和钢。
9.根据权利要求8所述的方法,其中所述钢是不锈钢。
10.根据权利要求1所述的方法,其中所述气缸是镍衬里的。
11.一种用于抑制在阀门组件中形成羰基化合物的方法,其中所述阀门组件与一氧化碳接触,所述方法包括用氢化非晶硅化合物涂覆所述阀门组件的内部部件和外部部件,所述内部部件和所述外部部件选自由入口端口、出口端口和下主轴构成的组。
12.根据权利要求11所述的方法,其中通过化学气相沉积工艺用所述氢化非晶硅化合物涂覆所述内部部件。
13.根据权利要求11所述的方法,其中在将所述阀门组件连接到气缸之前,用所述氢化非晶硅化合物涂覆所述内部部件。
14.根据权利要求11所述的方法,其中所述入口端口、所述出口端口和所述下主轴由选自由铁和镍构成的组中的材料制成。
15.根据权利要求11所述的方法,其中所述内部部件和所述外部部件还包括隔膜。
16.根据权利要求11所述的方法,其中所述氢化非晶硅化合物还包含附加的官能团。
17.根据权利要求16所述的方法,其中所述附加的官能团选自由氧和碳构成的组。
18.根据权利要求13所述的方法,其中所述气缸由选自由以下项构成的组的材料制成:铝、镍和钢。
19.根据权利要求18所述的方法,其中所述钢是不锈钢。
20.根据权利要求13所述的方法,其中所述气缸是镍衬里的。
21.一种阀门组件,所述阀门组件包括:阀体,所述阀体具有穿过其中的流体通道,所述流体通道具有入口端口和出口端口;阀室,所述阀室与所述阀体中的所述入口端口和所述出口端口流体连通;第一阀,所述第一阀用于打开和关闭所述流体通道以控制通过所述流体通道的气体流动;与所述流体通道流体连通的螺纹组件;与所述出口端口连通的螺纹组件;其中所述第一阀包括螺杆形式的阀构件,所述阀构件具有下主轴、中主轴和上主轴,所述阀构件与阀座和隔膜接触,在所述第一阀的阀关闭位置中所述阀构件接合到所述阀座和所述隔膜上,其中当所述阀构件未接合所述阀座时,所述第一阀允许所述气体从所述入口端口穿过所述流体通道到达所述出口端口,并且所述入口端口、所述出口端口和所述阀座涂覆有氢化非晶硅化合物。
22.根据权利要求21所述的阀门组件,其中通过化学气相沉积工艺将所述氢化非晶硅化合物涂覆在所述入口端口、所述出口端口和所述阀座的表面上。
23.根据权利要求21所述的阀门组件,其中在将所述阀门组件连接到气缸之前,用所述氢化非晶硅化合物涂覆所述入口端口、所述出口端口、所述阀座和所述隔膜。
24.根据权利要求21所述的阀门组件,其中所述入口端口、所述出口端口、所述隔膜和所述下主轴由选自由铁和镍构成的组中的材料制成。
25.根据权利要求21所述的阀门组件,还包括被所述氢化非晶硅化合物涂覆的隔膜。
26.根据权利要求21所述的阀门组件,其中所述氢化非晶硅化合物还包含附加的官能团。
27.根据权利要求26所述的阀门组件,其中所述附加的官能团选自由氧和碳构成的组。
28.根据权利要求23所述的阀门组件,其中所述气缸由选自由以下项构成的组的材料制成:铝、镍和钢。
29.根据权利要求28所述的阀门组件,其中所述钢是不锈钢。
30.根据权利要求23所述的阀门组件,其中所述气缸是镍衬里的。
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- 2019-05-15 SG SG11202012006RA patent/SG11202012006RA/en unknown
- 2019-05-15 US US17/255,073 patent/US11796134B2/en active Active
- 2019-05-15 WO PCT/US2019/032385 patent/WO2019245674A1/en active Application Filing
- 2019-05-15 EP EP19822109.5A patent/EP3810335A4/en not_active Withdrawn
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TWI826458B (zh) | 2023-12-21 |
US20210262619A1 (en) | 2021-08-26 |
JP7138192B2 (ja) | 2022-09-15 |
EP3810335A1 (en) | 2021-04-28 |
SG11202012006RA (en) | 2021-01-28 |
US11796134B2 (en) | 2023-10-24 |
WO2019245674A1 (en) | 2019-12-26 |
KR20210020041A (ko) | 2021-02-23 |
KR102513246B1 (ko) | 2023-03-27 |
TW202012683A (zh) | 2020-04-01 |
EP3810335A4 (en) | 2022-05-18 |
JP2021526619A (ja) | 2021-10-07 |
CN112203778A (zh) | 2021-01-08 |
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