CN112201961A - Dual-function super-surface integrated device based on amplitude and phase regulation and design method - Google Patents
Dual-function super-surface integrated device based on amplitude and phase regulation and design method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H01—ELECTRIC ELEMENTS
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- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention belongs to the technical field of super-surface electromagnetic regulation and control, and particularly relates to a dual-function super-surface integrated device based on amplitude and phase regulation and a design method. The dual-function super-surface integrated device is formed by extending and arranging M units of super-surface in a plane; the super-surface unit is of an anisotropic structure and consists of a metal floor, a three-layer structure and two layers of dielectric slabs; in the three-layer structure, the I, III th layer is an I-shaped ITO (indium tin oxide) resistance film printed on a PET (polyethylene terephthalate) film, is of a sub-wavelength structure and is distributed along an x-axis; the second layer II consists of an I-shaped metal structure and two metal patches to form a dual-mode metal resonator which is distributed along the y axis; the I, III th layer of resistance film works under x polarized wave, the II th layer of metal structure works under y polarized wave; the resistance film of the I, III th layer is orthogonally distributed with the metal structure of the second layer; the dual-function integrated device can provide electromagnetic regulation and control and functions depending on polarization and has the advantages of high efficiency, easiness in processing, small thickness and the like.
Description
Technical Field
The invention belongs to the technical field of super-surface electromagnetic regulation and control, and particularly relates to a super-surface integrated device capable of realizing multiple functions and a design method thereof.
Background
As a two-dimensional form of a metamaterial, a super surface is widely concerned by researchers in various countries due to its strong electromagnetic manipulation capability, and becomes one of the research hotspots in the scientific community. Because of the unique electromagnetic properties that these natural materials do not possess, various microwave devices have been designed and reported. Among them, various bifunctional super-surfaces depending on polarization selection have been studied and designed in order to satisfy the demand for multi-functional integration on a single flat panel. However, most of the above implementations of bifunctional super-surfaces rely only on phase modulation in two linear polarization states. In fact, amplitude modulation as another important degree of freedom of electromagnetic waves has been widely applied to wave absorbers and other related applications. Although great research results have been obtained in terms of integration of amplitude and phase modulation, they are all implemented in one linear polarization channel at the same time and cannot be independently modulated in two completely separated linear polarization states, which seriously hinders practical application. At present, a design method for realizing double functions by independent amplitude and phase regulation under two orthogonal linear polarizations is still in a starting stage, and the working mechanism of the design method is still fuzzy. This pressing task has prompted us to find a design approach to achieve bifunctional hypersurfaces through amplitude and phase modulation of polarization selection.
Disclosure of Invention
The invention aims to provide a dual-function super-surface integrated device capable of independently regulating and controlling the amplitude and the phase of electromagnetic waves under the excitation of two different linearly polarized waves and a design method thereof.
The dual-function super-surface integrated device provided by the invention is based on an anisotropic unit constructed by an ITO (indium tin oxide) resistance thin film and a metal structure, and can reflect amplitude under the incidence of x-polarized wavesAnd (4) regulating and controlling the reflection phase under the incidence of the y polarized wave, namely, double-function regulation and control. As shown in fig. 1, when the two bifunctional super-surface integrated devices are excited by x-polarized waves, they can implement similar broadband wave-absorbing function (denoted as F)1) (ii) a When y polarized wave is excited, the functions of multi-beam radiation and uniform scattering (marked as F) are respectively realized2)。
The invention provides a dual-function super-surface integrated device, which is formed by M-M super-surface units with different sizes which are arranged in a plane at equal intervals and in a periodic continuation way; to realize the dual function integrated device shown in fig. 1, the super surface unit must be an anisotropic structure, as shown in fig. 2. The super-surface units are square, and the periods (namely the lengths of the super-surface units) are p; the super-surface unit is composed of a metal floor, a three-layer structure and two layers of dielectric slabs; the three-layer structure is sequentially marked as a layer I, a layer II and a layer III from top to bottom; the metal floor is the bottom layer; the first layer I and the third layer III are I-shaped ITO (indium tin oxide) resistance films printed on the PET film, have sub-wavelength structures and are distributed along an x-axis, and the surface resistance and the structure of the two layers are completely the same; the second layer II consists of an I-shaped metal structure and two parallel metal patches which are symmetrically distributed on two sides of the I-shaped metal structure to form a dual-mode metal resonator (a metal structure for short) and are distributed along the y axis; in the 2-layer dielectric plate, a first dielectric plate is arranged between the II-layer dual-mode metal resonator and the III-layer ITO resistive film, and a second dielectric plate is arranged between the III-layer ITO resistive film and the metal floor; the ITO resistance films of the layer I and the layer III work under x polarized waves, and the metal structure of the layer II works under y polarized waves; the I-shaped ITO resistance films of the layer I and the layer III are orthogonally distributed with the metal structure of the second layer so as to ensure the normal work of each polarization and also ensure the very low cross polarization crosstalk;
the structural parameters of each unit are recorded as follows: the width of the I-shaped ITO resistance film line is w2Length is l; the length of the dual-mode metal resonator structure is a, and the line width of each part is w1The length of the metal strips at the two ends of the I-shaped structure is t, and the gaps between the I-shaped structure and the metal patches are g. h is1And h2The thicknesses of the first dielectric plate and the second dielectric plate are respectively. H is a super surfaceThe height (or thickness) of the cell.
The thickness of the PET film was 0.175mm, the dielectric constant was 3, and the loss tangent was 0.003.
According to the requirements of the dual-function integrated device, the invention optimally designs the super-surface unit structure, and the specific steps are as follows.
The first step is as follows: an ITO resistance thin film structure is introduced into a dual-function super-surface unit of an integrated device to construct an amplitude regulation and control mode
First, the same diagonal reflection matrix
To describe a co-polarized reflective element having mirror symmetry; in the formula, rxxAnd ryyRespectively representing the reflection coefficients of the x and y polarized waves; it is desirable to achieve tunable | r over a wide bandwidthxx|(|ryy| r) and | ryy|(|rxx1 |); under the condition, the co-polarized reflecting unit shows an amplitude regulation function when excited by x-polarized waves or y-polarized waves, and totally reflects the y-polarized waves or the x-polarized waves; and by changing the geometric dimension of the metal structure, the reflection phase can be realized under the condition of cross polarization
Independent regulation and control;
then, as shown in fig. 3, when the structure is only the III-th or I-th ITO layer in the x-axis direction as shown in the graphs 3(a) and (b), the same and opposite currents are concentrated between the III-th layer and the metal floor, and between the I-th layer and the metal floor, and only a single electromagnetic resonance or magnetic resonance mode is excited; when the structures are simultaneously distributed with the I layer and the III layer ITO as shown in the figures 3(c) and (d), reverse and same-direction current distributions are generated between the I layer and the III layer and between the I layer and the floor at low frequency and high frequency respectively due to the coupling between the multiple layers, which shows that magnetic resonance and electric resonance modes are excited; the problem of working broadband can be effectively solved by the combined action of a plurality of resonance modes. Therefore, the double-layer ITO units with ITO resistance films distributed on the layer I and the layer III are selected to realize the amplitude regulation function under the excitation of x polarized waves; the ITO resistance film structure and the metal structure are distributed in an orthogonal layered manner, so that the normal work of each polarization is ensured, and the problems of amplitude regulation bandwidth under the excitation of x polarized waves and coupling under cross polarization can be well solved;
finally, the surface resistance R of the double-layer ITO is changedsSo that the reflection matrix of the co-polarized reflection unit satisfies r in a Cartesian coordinate system (x, y, z)xxWith RsWhen the unit has adjustable reflection amplitude under the excitation of the x-polarized wave;
to verify the amplitude modulation and subwavelength characteristics, let the period p be 8.5 mm. As shown in fig. 4, it can be obtained by simulation that when l is 8mm, w2When the thickness is 0.8mm, the X-polarized wave is excited, and the R is followedsThe reflection amplitude gradually decreases from 5 Ω/sq to 35 Ω/sq, which is consistent with the intended design objective of the present invention. The invention can realize the regulation and control of the reflection amplitude by changing the surface resistance of the ITO. More importantly, when the surface resistance of the ITO is 35 omega/sq, the unit realizes the reflection amplitude below-10 dB in the frequency band of 7.8-19 GHz, which lays a foundation for realizing the broadband wave-absorbing function later.
The second step is that: the dual-mode metal resonator is introduced into the dual-function super-surface unit of the integrated device to construct a phase regulation mode
Based on the ITO resistance film model, the electromagnetic characteristics of the single-mode and double-mode I-shaped metal resonators are compared and analyzed, and the reflection phase of the single-mode I-shaped metal resonator cannot reach the coverage range of 360 degrees. Therefore, the invention selects a dual-mode metal structure as the II layer, and the directions of the dual-mode metal structure are distributed along the y axis; due to the wave absorbing property of the ITO resistance film, the unit not only absorbs x-polarized waves, but also reduces the reflection amplitude of y-polarized waves; therefore, the length l and the width w of the ITO resistive thin film are designed2The influence of ITO on the reflection amplitude of the y polarized wave is reduced; when l is 8mm, w is not less than 0.62When the thickness is less than or equal to 0.8mm, the influence of the ITO resistance film on the reflection amplitude of the y-polarized wave can be ignored; in this case, the unit can realize the main polarized reflection phase by changing the length a of the I-shaped metal resonator under the excitation of the y-polarized waveBit
Can be arbitrarily regulated and controlled within the range of 360 degrees, and simultaneously, | ryy| is close to 1; as shown in fig. 5(a), the simulation shows that g is 0.2mm, w1When t is 2.4mm and 0.4mm, the unit realizes a reflection phase coverage range of 360 degrees at 12.5GHz by changing the length a of the I-shaped metal resonator under the excitation of the y-polarized wave; at the same time, the reflection amplitudes of the different cells are also maintained at a level close to 1, as shown in fig. 5 (b).
The third step: dual-function super-surface unit for synthesizing integrated device with final amplitude and phase regulation
With the amplitude regulation structure in the first step and the phase regulation structure in the second step, a three-layer unit structure integrating amplitude regulation and phase regulation can be finally constructed; in the final synthesized structure, the I and III layers are I-shaped ITO resistance films with the same resistance value and structure, the II layer is an I-shaped dual-mode metal resonator, and the bottom layer is a continuous metal floor; the ITO resistance film structure and the metal structure are distributed in an orthogonal mode, so that normal work of each polarization is guaranteed, and low cross polarization crosstalk is guaranteed, so that independent regulation and control of amplitude and phase of the final super-surface are achieved under the excitation of mutually orthogonal linear polarization waves;
except the length a and the surface resistance R of the I-shaped resonatorsBesides, other structural parameters of the optimization determination unit are specifically as follows: g is 0.2mm, w1＝0.4mm，w2＝0.8mm，l＝8mm，h1＝1mm，h22mm, t 2.4 mm; the metal is copper and the thickness is 0.036 mm. Dielectric plate having dielectric constant εr2.65 of polytetrafluoroethylene (F4B).
The fourth step: predetermining the specific function of the dual-function super-surface integrated device, determining ITO surface resistance and phase distribution
Broadband wave absorption is integrated with multi-beam radiation and uniform scattering respectively to serve as two functions of two dual-function super-surface integrated devices; according to the analysis of the first three steps, the super-surface unit can realize independent regulation and control of amplitude and phase under two orthogonal polarizations. Therefore, the broadband wave absorbing function under the excitation of x-polarized waves can be realized by selecting the surface resistance of the ITO resistance films of the layer I and the layer III, and the multi-beam radiation or uniform scattering function under the excitation of y-polarized waves can be realized by constructing the phase distribution of the metal structure of the layer II;
in the invention, the ITO surface resistance of two dual-function super-surface integrated devices is selected to be 35 omega/sq, so as to realize the broadband wave absorbing function under the excitation of x polarized waves; under the excitation of y polarized wave, through alternative projection algorithm[1]Optimizing phase distribution for multi-beam radiation functions using random phase distribution[2]The uniform scattering function is realized; the phase distribution is shown in fig. 6.
The fifth step: determining the topological structure of the dual-function super-surface integrated device, namely the structure of each three-layer super-surface unit on the caliber according to the preset function and the calculated phase distribution to realize the dual-function integrated device
Firstly, the I layer and the III layer of the two dual-function super-surface integrated devices adopt ITO (indium tin oxide) resistance films with surface resistance of 35 omega/sq and are uniformly distributed to realize broadband wave absorbing function (namely function one, F) under the excitation of x polarized waves1) (ii) a Then, under the condition of keeping the layer I and the layer III unchanged, introducing a non-uniformly distributed I-shaped metal structure into the layer II; at 4<a<Within the range of 8mm, the length a of the metal is changed by taking 0.1mm as a step length, other structural parameters are kept unchanged, the phase distribution of the two devices respectively meets the specific phase distribution, and as shown in fig. 5, four-beam radiation and uniform scattering under the excitation of y-polarized waves are realized (namely, function two, F2)。
By the method of the invention, the optimized structural parameters are as follows: p 8.5mm, H3.422 mm, g 0.2mm, w1＝0.4mm， w2＝0.8mm，l＝8mm，h1＝1mm，h22mm, t 2.4 mm; the metal is copper, and the thickness is 0.036 mm; the ITO surface resistance was 35. omega./sq.
The invention provides two bifunctional super-surface integrated devices which realize two specific functions under two linear polarization states and a design method thereof based on an anisotropic unit formed by an ITO (indium tin oxide) resistance film and a metal resonator. The dual-function super-surface integrated device can be used for independently performing electromagnetic control on electromagnetic waves under x and y polarization and has the advantages of easiness in processing, small section, high efficiency and the like.
Drawings
FIG. 1 is a functional schematic diagram of a polarization selective dual-function super-surface integrated device.
FIG. 2 is a schematic diagram of a cell structure in a dual-function super-surface integrated device.
FIG. 3 shows the current distribution of ITO and metal floor under the excitation of x-polarized wave.
FIG. 4 shows the reflection amplitudes of the super-surface unit under different surface resistance values under the excitation of x-polarized waves.
Fig. 5 shows (a) reflection phase and (b) reflection amplitude of the dual-function super-surface integrated device unit under the excitation of y-polarized wave and under different structure sizes.
Fig. 6 is a phase distribution of (a) a four-beam radiation function and (b) a uniform scattering function under excitation of the y-polarized wave.
Fig. 7 shows (a) far-field scattering pattern and (b) near-field electric field distribution pattern of the dual-function super-surface integrated device I and a metal plate with the same size in xoz plane under the excitation of x-polarized wave.
Fig. 8 shows simulated and tested absorptance under x-polarized wave excitation.
Fig. 9 is a simulation diagram of the four-beam radiation function.
Fig. 10 is a theoretical calculated four-beam far-field radiation pattern.
Fig. 11 is a three-dimensional far field radiation pattern at 4 different frequencies.
Fig. 12 shows (a) a far-field test apparatus and (b) a near-field test apparatus.
Fig. 13 shows the results of testing and simulation of the two-dimensional far-field radiation pattern in the E plane at 4 representative frequencies.
Fig. 14 shows the results of testing and simulation of the two-dimensional far-field radiation pattern in the H plane at 4 representative frequencies.
Figure 15 shows the results of near field testing in xoy plane at 4 different representative frequencies.
Fig. 16 shows the simulation, the test gain and the aperture efficiency of the four-beam radiation function of the dual-function super-surface integrated device I at different frequencies.
Fig. 17 shows (a) far-field scattering pattern and (b) near-field electric field distribution pattern of the dual-function super-surface integrated device II and a metal plate with the same size in xoz plane under x-polarized wave excitation.
Fig. 18 shows x-polarized wave excitation simulation and test absorptance.
Fig. 19 is a three-dimensional far-field pattern of the dual-function super-surface integrated device II and a metal plate with the same size at 3 different frequencies under excitation of y-polarized wave.
FIG. 20 shows the (a) single-station and dual-station RCS scaling simulation results and (b) single-station RCS scaling simulation and test results of the dual-function super-surface integrated device II under y-polarized wave excitation.
Detailed Description
The following two examples are provided to describe the specific implementation of the dual function super surface integrated device.
1. Dual-function super-surface integrated device I integrating wave absorption and four-beam radiation
Firstly, designing broadband wave absorption under the excitation of x-polarized wave, namely function F1. Uniformly distributing R on the I and III layers of the super-surface integrated devicesThe ITO unit with the shape of 'I' of 35 omega/sq can realize broadband wave absorption under the excitation of an x-polarized wave. The whole super-surface integrated device consists of 28 multiplied by 28 units, and FDTD simulation calculation is carried out on an array structure by adopting commercial simulation software CST[2]In the simulation process, plane wave irradiation of an electric field along the x direction is adopted. As shown in fig. 7(a), the three-dimensional scattering pattern of the xoz facets reveals that the super-surface integrated device achieves a RCS reduction of over 10dB relative to a bare metal Plate (PEC) of the same size. And as can be seen from the xoz plane electric field distribution shown in fig. 7(b), the super surface integrated device exhibited a relatively weak electric field distribution with respect to the PEC. In order to quantitatively research the wave absorbing performance of the composite material, the absorption rate of the composite material is simulated and tested. As shown in FIG. 8, simulation and test results are well matched, and the super-surface integrated device achieves absorption rate of more than 90% in a frequency band of 7.8-19 GHz.
The phase modulation mode upon excitation of the y-polarized wave, i.e. the four-beam radiation function F, is discussed below2. Here, an alternating projection algorithm is usedTo optimize the phase profile of the layer II in the super surface integrated device. The finally calculated phase distribution of the layer II shows a twofold symmetry in the x and y directions as shown in fig. 6 (a). As shown in FIG. 9, the aperture of the y-polarized horn (cos) is 44mm × 24mmq(θ), where q is the beam modulation factor) is placed as a feed at a location 140mm from the center F of the super-surface integrated device. The feed source horn has the following physical dimensions: 22.86mm for a, 10.16mm for b, and 30mm for L. For easy characterization and without loss of generality, four uniform amplitude penpoint-shaped beam orientations are respectively preset to phi1＝0°、φ2＝90°、φ3180 deg. and phi4The pitch angle is all equal to 30 degrees as 270 degrees. In the optimization process, the central working frequency of the antenna is preset as f012.5 GHz. Feed horn is in f0The gain at is approximately 10 dB. A theoretically calculated highly directional four-beam three-dimensional far-field radiation pattern is shown in fig. 10. Figure 10 shows that four highly directional beams of uniform amplitude are directed in 4 different directions in space, and more importantly, the amplitude of the side lobe regions are all below-30 dB.
For verification, in the CST full wave simulation software, a waveguide port is used to excite the feed source, as shown in fig. 11, at 12, 12.5, 13 and 13.5GHz, four high-gain high-directional beams with uniform electric field strength point to four different directions symmetrically, which is completely consistent with theoretical calculation. Wherein, in f0The peak gain of the four-beam reflectarray is 21.2dB, according to the equation
The corresponding aperture efficiency was calculated to be 38.6%, where N represents the number of beams and A is the super-surface aperture area.
Finally, the four-beam radiation performance is characterized through experiments, as shown in fig. 12, the whole test process is divided into two parts: far field testing and near field testing. The far field test is used for testing a four-beam directional pattern, during testing, a feed source and a super-surface integrated device are fixed together and are arranged in the center of a cylindrical foam capable of rotating around a central axis, and a standard gain loudspeaker working at 8-18 GHz is arranged on the cylindrical foam 10m away from a sample and used for receiving a radiation field. All electromagnetic wave signals are transmitted by an AV3672B vector network analyzer in the test process. On the other hand, when testing the near field, the feed source and the super surface integrated device are also fixed together and placed in the cylindrical foam, and the feed source and the super surface integrated device keep a horizontal distance of 140 mm. A monopole antenna of 6mm length was placed as a receiving antenna at a position 70mm from the feed for detecting the signal of the reflected electromagnetic wave. The feed source and the receiving antenna are respectively connected to 2 ports of the vector network analyzer. The monopole antenna is fixed on a 2-dimensional planar automatic scanning system, and the scanning area is 0.4m multiplied by 0.4m and the step size is 5 mm.
As shown in fig. 13 and 14, the simulation and test results of the E-plane and H-plane far-field radiation patterns are consistent with each other, and almost the same far-field radiation behavior is shown in the E-plane and H-plane, i.e., two main beams having the same electric field intensity are symmetrically directed in two directions. The near field test results are shown in fig. 15, where 4 bright spots with almost the same electric field density are symmetrically distributed in four regions in the xoy plane, which shows that the radiation energy is concentrated in four directions. As shown in fig. 16, the aperture efficiency of the antenna is f0The peak of 38.5% is reached, while the aperture efficiency of the antenna at other frequencies is lower than that of the design frequency, mainly due to phase distortion reflected by the element at other frequencies.
2. Wave-absorbing and uniform-scattering integrated device II with double functions and super-surface
Firstly, designing broadband wave absorption under the excitation of x-polarized wave, namely function F1. Here, the broadband wave absorption is realized by adopting the same design method as that of the first super-surface integrated device, and repeated description is omitted. The whole super-surface integrated device consists of 28 multiplied by 28 units, and FDTD simulation calculation is carried out on an array structure by adopting commercial simulation software CST[2]In the simulation process, plane wave irradiation of an electric field along the x direction is adopted. As shown in fig. 17(a), the three-dimensional scattering pattern of the xoz facets reveals that the super-surface integrated device achieves RCS reduction of over 10dB compared to the PEC of the same size. And can be seen from the xoz plane electric field distribution shown in FIG. 17(b)Super-surface integrated devices exhibit relatively weak reflected electric field strengths. In order to quantitatively research the wave absorbing performance of the composite material, the absorption rate of the composite material is simulated and tested. As shown in FIG. 18, the simulation and test results are well matched, and the super-surface integrated device realizes the absorption rate of more than 90% in the frequency band of 7.8-19 GHz.
The phase modulation mode upon excitation of the y-polarized wave, i.e. the uniform scattering function F, is discussed below2. First, we use MATLAB[4]Generating a random phase distribution of the layer II in the super-surface integrated device. As shown in fig. 6(b), the phase distribution is distributed in a random state on a two-dimensional plane. Full-wave simulation software CST (2018) is adopted to perform simulation verification on the super-surface. As shown in fig. 19, the super surface integrated device realizes uniform scattering of electromagnetic waves, compared to a bare metal plate of the same size. The simulation result of fig. 20(a) shows that the super-surface integrated device can achieve single-station and double-station RCS reduction performance of more than 10dB in a frequency band of 8.2-19.2 GHz (relative bandwidth is 80%). The simulated and tested single-station RCS reduction is shown in FIG. 20(b), the simulation and the test are well matched, and the RCS reduction exceeding 10dB is realized in the frequency band of 7.5-19.2 GHz.
Reference to the literature
[1]Xu HX,Tang SW,Zhou L,et al.Flexible control of highly-directive emissions based on bifunctional metasurfaces with low polarization cross-talking.Ann.Phys.2017；529:1700045.
[2]Y.Zhang,L.Liang,J.Yang,et al.Broadband diffuse terahertz wavescattering by flexible metasurfacewith randomized phase distribution.Sci.Rep.,2016,6:26875.
[3] CST China, CST microwave studio practical mathematics compilation, Shanghai Soft wave engineering software Co., Ltd., page number: 739 to 787.
[4] Butyl Yufeng, MATLAB from entry to essence, chemical industry press, page number: 72-73.
Claims (4)
1. A difunctional super surface integrated device based on amplitude and phase regulation is characterized by comprising M × M super surface units with different sizes which are arranged in a plane at equal intervals and periodically in a continuation mode; wherein the super surface unit is an anisotropic structure; the super-surface unit is square and specifically comprises a metal floor, a three-layer structure and two layers of dielectric slabs; the three-layer structure is sequentially marked as a layer I, a layer II and a layer III from top to bottom; the metal floor is the bottom layer; the first layer I and the third layer III are I-shaped ITO (indium tin oxide) resistance films printed on the PET film, have sub-wavelength structures and are distributed along an x-axis, and the surface resistance and the structure of the two layers are completely the same; the second layer II consists of an I-shaped metal structure and two parallel metal patches which are symmetrically distributed on two sides of the I-shaped metal structure to form a dual-mode metal resonator, namely the metal structure, and the dual-mode metal resonator is distributed along the y axis; in the 2-layer dielectric plate, a first dielectric plate is arranged between the II-layer dual-mode metal resonator and the III-layer ITO resistive film, and a second dielectric plate is arranged between the III-layer ITO resistive film and the metal floor; the ITO resistance films of the layer I and the layer III work under x polarized waves, and the metal structure of the layer II works under y polarized waves; the I-shaped ITO resistance films of the layer I and the layer III are orthogonally distributed with the metal structure of the second layer so as to ensure the normal work of each polarization and also ensure the very low cross polarization crosstalk;
the structural parameters of each unit are recorded as follows: the width of the I-shaped ITO resistance film line is w2Length is l; the length of the dual-mode metal resonator structure is a, and the line width of each part is w1The length of the metal strips at the two ends of the I-shaped structure is t, and the gaps between the I-shaped structure and the metal patches are g; the thicknesses of the first dielectric plate and the second dielectric plate are h respectively1And h2(ii) a Period p, the length of the super-surface unit; h is the thickness of the super-surface unit.
2. A bifunctional super surface integrated device based on amplitude and phase modulation according to claim 1, characterized by optimized super surface unit structure parameters as follows: p 8.5mm, H3.422 mm, g 0.2mm, w1＝0.4mm，w2＝0.8mm，l＝8mm，h1＝1mm，h22mm, t 2.4 mm; the metal is copper, and the thickness is 0.036 mm; the ITO surface resistance was 35. omega./sq.
3. A design method of the dual-function super-surface integrated device as claimed in claim 1, wherein the dual-function super-surface integrated device is composed of M × M super-surface units with different sizes arranged in a plane at equal intervals and periodically; the optimal design of the super-surface unit comprises the following specific steps:
the first step is as follows: an ITO resistance thin film structure is introduced into a dual-function super-surface unit of an integrated device to construct an amplitude regulation and control mode
First, the same diagonal reflection matrix
To describe a co-polarized reflective element having mirror symmetry; in the formula, rxxAnd ryyRespectively representing the reflection coefficients of the x and y polarized waves; it is desirable to achieve tunable | r over a wide bandwidthxx|(|ryy| r) and | ryy|(|rxx1 |); under the condition, the co-polarized reflecting unit shows an amplitude regulation function when excited by x-polarized waves or y-polarized waves, and totally reflects the y-polarized waves or the x-polarized waves; and by changing the geometric dimension of the metal structure, the reflection phase can be realized under the condition of cross polarization
Independent regulation and control;
selecting double-layer ITO units with ITO resistance films distributed on the layer I and the layer III respectively, and realizing an amplitude regulation function under the excitation of x polarized waves; the ITO resistance film structure and the metal structure are distributed in an orthogonal layered manner, so that the normal work of each polarization is ensured, and the problems of amplitude regulation bandwidth under the excitation of x polarized waves and coupling under cross polarization are solved;
finally, the surface resistance R of the double-layer ITO is changedsSuch that the reflection matrix of the co-polarized reflection unit satisfies r in a Cartesian coordinate system (x, y, z)xxWith RsWhen the unit has adjustable reflection amplitude under the excitation of the x-polarized wave;
the second step is that: the dual-mode metal resonator is introduced into the dual-function super-surface unit of the integrated device to construct a phase regulation mode
Based on the ITO resistance film model, comparing and analyzing the electromagnetic characteristics of the single-mode and double-mode I-shaped metal resonators, and selecting a double-mode metal structure as a layer II, wherein the direction of the double-mode metal structure is distributed along the y axis; due to the wave absorbing property of the ITO resistance film, the unit not only absorbs x-polarized waves, but also reduces the reflection amplitude of y-polarized waves; thus, the length l and the width w of the ITO resistive thin film are designed2The influence of ITO on the reflection amplitude of the y polarized wave is reduced; when l is 8mm, w is not less than 0.62When the thickness is less than or equal to 0.8mm, the influence of the ITO resistance film on the reflection amplitude of the y-polarized wave can be ignored; at this time, the unit is excited by y polarized wave, and the length l of the ITO resistance film in the shape of 'I' is changed to realize the main polarization reflection phase
Can be arbitrarily regulated and controlled within the range of 360 degrees, and simultaneously, | ryy| is close to 1;
the third step: dual-function super-surface unit for synthesizing integrated device with final amplitude and phase regulation
Constructing a final three-layer unit structure integrating amplitude and phase regulation based on the amplitude regulation structure in the first step and the phase regulation structure in the second step; in the final synthesized structure, the layer I and the layer III are I-shaped ITO resistance films with the same resistance value and structure, the layer II is an I-shaped dual-mode metal resonator, and the bottommost layer is a continuous metal floor; the ITO resistance film structure and the metal structure are distributed in an orthogonal mode, so that normal work of each polarization is guaranteed, and low cross polarization crosstalk is guaranteed, so that independent regulation and control of amplitude and phase of the final super-surface are achieved under the excitation of mutually orthogonal linear polarization waves;
the fourth step: predetermining the specific function of the dual-function super-surface integrated device, determining ITO surface resistance and phase distribution
Broadband wave absorption is integrated with multi-beam radiation and uniform scattering respectively to serve as two functions of two dual-function super-surface integrated devices; according to the first three steps, the super-surface unit can realize independent regulation and control of amplitude and phase under two orthogonal polarizations; therefore, the broadband wave absorbing function under the excitation of x-polarized waves is realized by selecting the surface resistance of the ITO resistance films of the layer I and the layer III, and the multi-beam radiation or uniform scattering function under the excitation of y-polarized waves is realized by constructing the phase distribution of the metal structure of the layer II;
selecting the ITO surface resistance of the two bifunctional super-surface integrated devices as 35 omega/sq to realize the broadband wave absorbing function under the excitation of x-polarized waves; under the excitation of y polarized waves, optimizing the phase distribution of the multi-beam radiation function through an alternate projection algorithm, and realizing the uniform scattering function by using a random phase distribution algorithm;
the fifth step: determining the topological structure of the dual-function super-surface integrated device, namely the structure of each three-layer super-surface unit on the caliber according to the preset function and the calculated phase distribution to realize the dual-function integrated device
Firstly, the I layer and the III layer of the two dual-function super-surface integrated devices adopt ITO (indium tin oxide) resistance films with surface resistance of 35 omega/sq, which are uniformly distributed, so as to realize the broadband wave absorbing function under the excitation of x polarized waves; then, under the condition of keeping the layer I and the layer III unchanged, introducing a non-uniformly distributed I-shaped metal structure into the layer II; the length a of the metal is changed, other structural parameters are kept unchanged, and the phase distribution of the two devices respectively meets the specific phase distribution, so that four-beam radiation and uniform scattering under the excitation of y-polarized waves are realized.
4. The design method of claim 3, wherein other structural parameters of each unit in the super surface integrated device except the length a of the I-shaped metal resonator are kept unchanged; the optimized structural parameters are as follows: p 8.5mm, H3.422 mm, g 0.2mm, w1＝0.4mm，w2＝0.8mm，l＝8mm，h1＝1mm，h22mm, t 2.4 mm; the metal is copper, and the thickness is 0.036 mm; the ITO surface resistance was 35. omega./sq.
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