CN113745845B - Low-scattering super-surface array capable of inhibiting time-domain sputtering effect and design method thereof - Google Patents
Low-scattering super-surface array capable of inhibiting time-domain sputtering effect and design method thereof Download PDFInfo
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- CN113745845B CN113745845B CN202111031172.1A CN202111031172A CN113745845B CN 113745845 B CN113745845 B CN 113745845B CN 202111031172 A CN202111031172 A CN 202111031172A CN 113745845 B CN113745845 B CN 113745845B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0046—Theoretical analysis and design methods of such selective devices
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Abstract
The invention discloses a low-scattering super-surface array capable of effectively inhibiting a time domain sputtering effect and a design method thereof. The resistance film structure layer adopts a cross structure, and the reflectivity curve of the unit and the duration and the maximum value of the time domain sputtering effect can be effectively regulated and controlled by adjusting the arm length and the width of the cross structure and the surface resistance of the film resistor. The super-surface has low scattering property in a frequency domain, and has a function of inhibiting a time domain sputtering effect in a time domain. Thus, the super-surface has stealth functionality in both the frequency and time domains.
Description
Technical Field
The invention belongs to the field of electromagnetic stealth, and particularly relates to a low-scattering super-surface array capable of inhibiting a time domain sputtering effect and a design method thereof.
Background
With the development of modern radio technology and radar detection technology, traditional combat weapons are increasingly threatened. In order to improve the survival, defense and other capabilities of weapon systems, stealth technology becomes a research hotspot of modern science and technology. The stealth technology is a technology for changing the detectability information characteristics of own targets by researching and utilizing various different technical means so as to realize stealth.
Currently, for the conventional frequency domain detection method, many stealth techniques have been proposed, for example: appearance design technology, novel material technology, offset technology and the like. By these stealth techniques, scattered waves of a target can be reduced in a certain frequency band range. Since the low scattering frequency band of the target in the frequency domain is limited, the target does not necessarily have a low scattering property in the time domain. In 2015, the subject group of wang macro has been studied on the time-frequency scattering properties of the periodic structure of EBG. This study shows that the periodic structure with EBG has very low backscattering in a certain frequency domain. However, when the incident wave is a single-frequency (frequency is within the operating frequency band of the structure) sine wave, the amplitude of the starting end of the scattered wave is large, i.e. the structure has a strong time domain sputtering effect.
The Fourier transform is utilized to analyze the time domain sputtering effect, and the result shows that: the duration of the time domain sputtering effect can be effectively shortened by increasing the low scattering bandwidth of the scatterer; and the maximum value of the sputtering effect can be effectively reduced by inhibiting the out-of-band reflectivity of the scatterer in a certain frequency range. According to the conclusion, the invention designs the low-scattering super surface capable of inhibiting the time domain sputtering effect by utilizing the strong regulation and control capability of the metamaterial on the electromagnetic wave. The super surface has a stealth function in both the frequency domain and the time domain.
Disclosure of Invention
The technical problem is as follows: the invention aims to solve the problem of sputtering phenomenon generated by the traditional low-scattering material under the incidence of sine waves.
The technical scheme is as follows: the invention discloses a low-scattering super-surface array capable of inhibiting a time domain sputtering effect.
The cross-shaped resistance film is of a centrosymmetric structure and comprises a cross-shaped transverse edge and a cross-shaped vertical edge, and the width l of the transverse edge and the width l of the vertical edge1The distance from one end of the vertical edge to the transverse edge is w1The length of the horizontal side and the vertical side is equal to l1+2w1；
Furthermore, the width l of the transverse edge and the vertical edge is adopted in the invention112mm, distance w from one end of the vertical edge to the transverse edge1＝1.5mm。
Furthermore, the dielectric layer is of a square structure and has a thickness h1Denotes that in the present invention h is used12 mm; the dielectric layer adopts a relative dielectricF4B material with a constant of 2.2.
Furthermore, the surface structure of the metal back plate layer is the same as that of the dielectric layer and is a square structure, and the thickness of the metal back plate layer is 0.035 mm.
Further, the length p of the super-surface unit1The length of the dielectric layer is the length of the super-surface unit, which is 20 mm.
The invention provides a design method of a low-scattering super-surface array capable of inhibiting a time domain sputtering effect based on an analysis result of the time domain sputtering effect by utilizing Fourier transform, and the method is based on the low-scattering super-surface array capable of inhibiting the time domain sputtering effect and comprises the following steps:
The working frequency of the low-scattering super surface is 6GHz, and the structural dimension comprises the length p of a super surface unit1The width l of the transverse edge and the vertical edge of the cross-shaped resistance film1The distance from one end of the vertical edge to the transverse edge is w1And a dielectric layer thickness h1。
And 2, taking a rectangular pulse signal as an incident wave, taking the carrier frequency of the rectangular pulse signal as the frequency in the working frequency band, simulating the reflected wave waveform of the super-surface unit by a time domain method, observing the reflected wave waveform, and entering the step 3 if the sputtering effect duration is more than 0.1ns or the sputtering maximum value is not less than the incident wave amplitude, otherwise, ending the step.
And 3, optimizing the structural size of the super-surface unit by using a simulation software component CST STUDIO SUITE 2019 according to the working frequency of the low-scattering super-surface, increasing the low-scattering bandwidth and inhibiting the out-of-band reflectivity by optimizing the structure of the unit, and returning to the step 2.
Furthermore, in order to inhibit the out-of-band reflectivity in a wider frequency range, the cross-shaped resistance film is subjected to screen printing by adopting an ITO conductive film or resistance carbon paste.
Has the beneficial effects that: the invention simultaneously focuses on the stealth effect of the super surface in the frequency domain and the time domain. A low-scattering super-surface array capable of suppressing the time-domain sputtering effect is designed. The super-surface array has a stealth function in both frequency domain and time domain, and has a very high application prospect in the field of electromagnetic stealth.
Drawings
FIG. 1 is a schematic view of the cross-shaped resistive thin film and dielectric layer structure of the present invention;
FIG. 2 is a schematic illustration of a super-surface array composed of super-surface elements;
FIG. 3 is a schematic diagram of a strong resonant metal square ring unit structure;
FIG. 4 is a schematic structural diagram of a strongly resonant metal square ring array;
FIG. 5 is a graph of the reflection amplitudes of the super-surface element array and the metal square ring element array of the present invention;
FIG. 6 is a rectangular pulse signal with a carrier frequency of 6.08 GHz;
FIG. 7 is a time domain scattered waveform generated by the array of super surface elements of the present invention;
FIG. 8 is a time domain scattering waveform generated by the metal square ring unit array.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the drawings.
The following conclusions are drawn by analyzing the main factors influencing the time-domain sputtering effect by using Fourier transform: the wider the low scattering bandwidth of the array, the shorter the duration of its time domain sputtering effect; the lower the out-of-band reflectivity of the array, the smaller its maximum value of the time domain sputtering effect.
To achieve suppression of the time-domain sputtering effect, the present invention designs a super-surface array M1 composed of super-surface elements with a wider bandwidth and lower out-of-band reflectivity. As shown in fig. 1, the super-surface unit includes an upper cross-shaped resistive film, a middle dielectric layer, and a bottom metal back plate layer. Specifically setting parameters of the super-surface unit: p is a radical of1＝20mm，l1＝12mm，w1＝1.5mm，h 12 mm. Of upper cross-shaped resistive filmThe sheet resistance is 8 omega/sq, the dielectric layer is made of F4B material with relative dielectric constant of 2.2, the metal back plate layer is made of material with excellent conductivity such as copper, silver and the like, and the thickness of the metal back plate layer is 0.035 mm. As shown in FIG. 2, the super surface array M1 is a square formed by 15 × 15 super surface units, and the side length of the super surface array M1 is 300 mm.
For comparison, a narrow-band and high-out-of-band reflectivity metal square ring array M2 is selected, and the metal square ring array M2 includes metal square ring units, as shown in fig. 3, where the metal square ring units include an upper metal square ring, a middle dielectric layer, and a bottom metal back plate layer. The side length of the metal square ring is l2Width of the metal square ring is w2The length of the metal square ring unit is p2The dielectric layer of the middle layer is FR4 material with relative dielectric constant of 4.3(1-0.024j) and thickness of h2The metal back plate of the bottom layer is made of materials with excellent electric conduction, such as copper, silver and the like, and the thickness of the metal back plate layer is 0.035 mm. The specific parameters are set as follows: p is a radical of2＝10mm，l2＝7.8mm，w2＝0.7mm，h20.6 mm. As shown in fig. 4, the metal square ring array M2 is 30 × 30 metal square ring units, and the side length of the metal square ring array is 300 mm.
According to the structural size and the material composition of the super-surface array M1 and the metal square ring array M2, the corresponding arrays M1 and M2 are processed and prepared. And the resulting arrays M1, M2 were placed in a microwave dark room for testing. FIG. 5 shows the results of the reflection amplitude test of the super-surface unit array and the metal square ring unit array according to the present invention. As can be seen from FIG. 5, both the super-surface cell array and the metal square ring cell array of the present invention have low scattering properties around 6 GHz. In addition, the super-surface cell array M1 of the present invention has a wider low scattering bandwidth and a lower out-of-band reflectivity than the metal square ring cell array M2. In order to verify that the super-surface element array M1 has an inhibiting effect on the time-domain sputtering effect, rectangular pulse signals with the carrier frequency of 6.08GHz shown in FIG. 6 are respectively incident on the two arrays, and the obtained scattering waveforms are respectively shown in FIG. 7 and FIG. 8. As can be seen from fig. 8, the scattered wave of the metal square ring unit array M2 has obvious sputtering phenomena at the beginning and the end. As shown in FIG. 7, no significant sputtering was observed for the scattering waveform of the super-surface element array M1 of the present invention.
In the embodiment, the reflectivity of the low-scattering super-surface unit array M1 capable of suppressing the time-domain sputtering effect is reduced by more than 10dB relative to a smooth metal plate in the frequency range of 5.6-6.5GHz, and meanwhile, the suppression of the time-domain sputtering phenomenon is realized in the time domain.
Claims (8)
1. A low-scattering super-surface array capable of inhibiting a time domain sputtering effect is characterized by comprising super-surface units, wherein each super-surface unit sequentially comprises a cross-shaped resistance film, a dielectric layer and a metal back plate layer from top to bottom;
the cross-shaped resistance film is of a central symmetrical structure and comprises a cross-shaped transverse edge and a cross-shaped vertical edge, and the width of the transverse edge and the width of the vertical edge are equal to that of the cross-shaped transverse edge
The distance from one end of the vertical edge to the transverse edge is equal to
(ii) a The cross-shaped resistance film is made of ITO conductive film or resistance carbon paste by screen printing.
2. The array of claim 1, wherein the width of the transverse and vertical edges is selected to suppress the temporal sputtering effect
Distance from one end of the vertical edge to the transverse edge
。
3. The array of claim 1, wherein the dielectric layer has a square structure.
4. The array of claim 1, wherein the dielectric layer has a thickness that is substantially equal to the thickness of the dielectric layer 
。
5. The array of claim 1, wherein the dielectric layer is made of F4B with a relative dielectric constant of 2.2.
6. The array of claim 1, wherein the super-surface elements have lengths
。
7. A method for designing a low scattering super-surface array capable of suppressing the time domain sputtering effect, wherein the method is based on the low scattering super-surface array capable of suppressing the time domain sputtering effect as claimed in claim 1, and the method comprises the following steps:
step 1, optimizing the structure size of a super-surface unit by using simulation software CST STUDIO SUITE 2019 according to the working frequency of a low-scattering super-surface, and reducing the reflectivity of the working frequency of a super-surface array by more than 10dB relative to the reflectivity of a smooth metal plate;
the structural dimension includes a length of the super-surface unit
The widths of the transverse edge and the vertical edge of the cross-shaped resistance film
The distance from one end of the vertical edge to the transverse edge is
And a thickness of the dielectric layer
；
Step 2, taking a rectangular pulse signal as an incident wave, taking the carrier frequency of the rectangular pulse signal as the frequency in a working frequency band, simulating the reflected wave waveform of the super-surface unit by a time domain method, observing the reflected wave waveform, entering step 3 if the sputtering effect duration is greater than 0.1ns or the sputtering maximum value is not less than the incident wave amplitude, and ending the step if the sputtering effect duration is not less than the incident wave amplitude;
And 3, optimizing the structural size of the super-surface unit by using a simulation software CST STIDIO SUITE 2019 according to the working frequency of the low-scattering super-surface, increasing the low-scattering bandwidth and inhibiting the out-of-band reflectivity of the super-surface unit by optimizing the structure of the unit, and returning to the step 2.
8. The method for designing the array of the low-scattering super-surface capable of suppressing the time-domain sputtering effect according to claim 7, wherein in the step 1 and the step 3, the operating frequency of the low-scattering super-surface is 6 GHz.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110488510A (en) * | 2019-08-22 | 2019-11-22 | 中北大学 | A kind of polarization regulation super structure surface optical device based on the nearly null effect of ITO dielectric constant |
| CN112201961A (en) * | 2020-10-09 | 2021-01-08 | 中国人民解放军空军工程大学 | Dual-function super-surface integrated device based on amplitude and phase regulation and design method |
| CN112864633A (en) * | 2021-01-08 | 2021-05-28 | 中南大学 | Broadband microwave absorber based on super surface |
| CN113286418A (en) * | 2021-05-28 | 2021-08-20 | 海宁利伊电子科技有限公司 | High-performance electromagnetic radiation suppression structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012169971A1 (en) * | 2011-06-07 | 2012-12-13 | Nanyang Technological University | Method of generating a metamaterial, and a metamaterial generated thereof |
-
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- 2021-09-03 CN CN202111031172.1A patent/CN113745845B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110488510A (en) * | 2019-08-22 | 2019-11-22 | 中北大学 | A kind of polarization regulation super structure surface optical device based on the nearly null effect of ITO dielectric constant |
| CN112201961A (en) * | 2020-10-09 | 2021-01-08 | 中国人民解放军空军工程大学 | Dual-function super-surface integrated device based on amplitude and phase regulation and design method |
| CN112864633A (en) * | 2021-01-08 | 2021-05-28 | 中南大学 | Broadband microwave absorber based on super surface |
| CN113286418A (en) * | 2021-05-28 | 2021-08-20 | 海宁利伊电子科技有限公司 | High-performance electromagnetic radiation suppression structure |
Non-Patent Citations (4)
| Title |
|---|
| Study on time domain electromagnetic sputtering effect from low RCS chessboard surface with EBG structure;Haijian Hou;《2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)》;20180111;全文 * |
| Thin Film Metamaterial Split Ring Resonators at Microwave Frequencies;Nees Paul 等;《2019 Thirteenth International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials)》;20191114;全文 * |
| 二氧化钒薄膜低温制备及其太赫兹调制特性研究;孙丹丹等;《物理学报》;20130108(第01期);全文 * |
| 周期性结构的时频散射特性研究;侯海健;《中国博士学位论文全文数据库(信息科技辑)》;20180615;全文 * |
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