CN112198169A - Wafer detection device and on-line complete equipment - Google Patents
Wafer detection device and on-line complete equipment Download PDFInfo
- Publication number
- CN112198169A CN112198169A CN202011413410.0A CN202011413410A CN112198169A CN 112198169 A CN112198169 A CN 112198169A CN 202011413410 A CN202011413410 A CN 202011413410A CN 112198169 A CN112198169 A CN 112198169A
- Authority
- CN
- China
- Prior art keywords
- module
- wafer
- rotation
- light source
- fundamental wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8835—Adjustable illumination, e.g. software adjustable screen
Abstract
The application provides a wafer detection device and on-line complete equipment, relates to the technical field of semiconductor manufacturing, and comprises a light source module, a rotating module, an optical signal sorting module and a detection module, wherein the rotating module, the optical signal sorting module and the detection module are arranged along the light path transmission direction of the light source module; the fundamental wave light beam emitted by the light source module forms annular incident light through a rotation period of the rotation module and enters a wafer to be detected in the processing device, the fundamental wave light beam reflected by the wafer to be detected enters the optical signal sorting module after passing through the rotation module, nonlinear optical signals sorted by the optical signal sorting module are input into the detection module, and the detection module detects the defects of the wafer to be detected according to the nonlinear optical signals. The rotating module changes the incident direction and the incident plane of the fundamental wave beam, and in a rotating period, the fundamental wave beam can form annular incident light, so that the azimuth angle error is reduced or eliminated, the anisotropy of a nonlinear optical signal is reduced or eliminated, and the detection accuracy is improved.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a wafer detection device and an online complete device.
Background
In the wafer manufacturing process, due to the fact that materials and complex process flows are difficult to avoid, corresponding defects of the wafer occur, therefore, various possible defects of the wafer in the manufacturing process need to be detected in real time, the defects are found in time and repaired or eliminated, the yield of devices is improved, and invalid processing of the defective wafer is reduced.
Because the preparation of the wafer needs a precise and dustless environment, the processing process is complicated, and the machine cannot be stopped repeatedly and checked, optical non-contact nondestructive detection needs to be adopted, and the detection is carried out while the preparation is carried out during the preparation of the wafer, so as to achieve the purpose of real-time detection.
The wafer defect condition can be obtained by extracting the defect information of the wafer in the reflected fundamental wave beam and carrying out corresponding analysis.
During detection, in order to improve signal to noise ratio and collect characteristic attributes of materials, detection light cannot vertically enter a wafer but enters the wafer in a side-entering manner, an azimuth angle (an azimuth angle is an angle between an incident plane and any specific crystal orientation or a wafer notch) of a detection fundamental wave beam entering the wafer from the side has randomness, so that the azimuth angle of the wafer is not controlled, and the azimuth angle difference of the wafer can cause an anisotropy of a reflection fundamental wave beam signal with defect information of the wafer, which is acquired by a detection device, possibly cause a change of the reflection fundamental wave beam signal from about 10% to 100%, so that an uncertainty error may exist in a detection result, and the accuracy of wafer defect detection is affected.
Disclosure of Invention
An object of the embodiment of the application is to provide a wafer detection device and an online complete equipment, which can reduce the influence of other influence factors on a detection signal of a wafer to be detected, and improve the accuracy of defect detection of the wafer to be detected.
In one aspect of the embodiment of the application, a wafer detection device is provided, which includes a light source module, and a rotation module, an optical signal sorting module and a detection module which are arranged along a light path transmission direction of the light source module, wherein the rotation module rotates around a main optical axis of the light source module; the fundamental wave light beam emitted by the light source module forms annular incident light through a rotation period of the rotation module and enters a wafer to be detected in the processing device, the fundamental wave light beam reflected by the wafer to be detected enters the optical signal sorting module after passing through the rotation module, nonlinear optical signals sorted by the optical signal sorting module are input into the detection module, and the detection module detects the defects of the wafer to be detected according to the nonlinear optical signals.
Optionally, an optical mirror is further disposed between the light source module and the rotating module along a light path transmission direction of the light source module, and a fundamental wave light beam emitted from the light source module is incident to the rotating module through the optical mirror.
Optionally, the optical mirror includes a transmission area and a reflection area, the fundamental wave beam emitted from the light source module is emitted to the rotation module through the transmission area, and the fundamental wave beam reflected from the wafer to be tested is emitted to the optical signal sorting module through the reflection area.
Optionally, the optic is a hollow mirror.
Optionally, the optical mirror is a dichroic mirror, the fundamental wave light beam emitted by the light source module is transmitted to the rotating module through the dichroic mirror, and the fundamental wave light beam reflected by the wafer to be tested is reflected to the optical signal sorting module through the dichroic mirror.
Optionally, the rotation module includes a rotation driver and a rotation unit connected to the rotation driver, the rotation driver drives the rotation unit to rotate, and the rotation unit rotates around a main optical axis of the light source module to guide a fundamental wave beam emitted from the light source module to the wafer to be measured.
Optionally, the rotating unit includes a rotating prism located on a main optical axis of the light source module, and a spherical reflector or a curved reflector annularly disposed on the same rotating radius of the rotating prism, the spherical reflector has a spherical reflecting surface, the curved reflector has a curved reflecting surface, a fundamental wave beam emitted from the light source module sequentially passes through an incident surface of the rotating prism, the spherical reflecting surface or the curved reflecting surface to be incident on the wafer to be tested, and the fundamental wave beam reflected from the wafer to be tested passes through the spherical reflecting surface or the curved reflecting surface and an emergent surface of the rotating prism to be emitted to the optical signal sorting module.
Optionally, the incident surface of the rotating prism and the exit surface of the rotating prism are respectively provided with a reflective film.
Optionally, the rotating prism includes two reflectors disposed opposite to each other, light-receiving surfaces of the two reflectors are disposed opposite to each other, an included angle is formed between the light-receiving surface and a horizontal plane, and the light-receiving surface reflects the fundamental wave beam toward the spherical reflection surface or the curved reflection surface.
Optionally, a confocal module is further disposed between the rotation module and the optical signal sorting module to reduce a rotation radius of a nonlinear optical signal beam generated by the wafer to be tested.
Optionally, the light source module includes a light source and a controller connected to the light source, and the controller controls the light source to output the fundamental wave light beam.
On the other hand of this application embodiment provides an online complete sets, including processingequipment and foretell wafer detection device, processingequipment includes the treatment chamber and establishes the plummer in the treatment chamber, and the treatment chamber is used for the wafer processing of awaiting measuring on being located the plummer, and the treatment chamber is equipped with optical window, and the wafer that awaits measuring is incided through optical window to the fundamental wave light beam of wafer detection device's light source module outgoing to detect the defect of the wafer that awaits measuring in the wafer course of working that awaits measuring.
The wafer detection device and online complete sets that this application embodiment provided, light source module outgoing fundamental wave light beam through the rotation of rotatory module, makes the fundamental wave light beam incide the wafer that awaits measuring with arbitrary direction, and the fundamental wave light beam of wafer reflection that awaits measuring sorts out nonlinear optical signal through sorting signal module, detects the defect that the module detected the wafer according to nonlinear optical signal. The rotating module changes the incident direction and the incident plane of the fundamental wave beam, in a rotating period, the fundamental wave beam continuously incident to the wafer to be detected can form annular incident light, the azimuth angles of different positions of the wafer to be detected can be mutually offset, the difference of the azimuth angle errors of different positions of the wafer to be detected is reduced or eliminated, therefore, the anisotropy of nonlinear optical signals is reduced or eliminated, and the detection accuracy is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a wafer inspection apparatus according to the present embodiment;
FIG. 2 is a second schematic structural diagram of the wafer inspection apparatus provided in the present embodiment;
fig. 3 is a schematic structural diagram of a signal sorting module of the wafer inspection apparatus according to the present embodiment;
fig. 4 is a second schematic structural diagram of a signal sorting module of the wafer inspection apparatus provided in the present embodiment;
fig. 5 is one of the general control schematic diagrams of the wafer inspection apparatus provided in this embodiment;
fig. 6 is a second schematic diagram of the overall control of the wafer inspection apparatus provided in the present embodiment;
FIG. 7 is a third schematic view illustrating a structure of the wafer inspection apparatus according to the present embodiment;
fig. 8 is a fourth schematic structural diagram of the wafer inspection apparatus provided in the present embodiment.
Icon: 101-a light source module; 1011-a light source; 1012-a controller; 102A, 102B-reflected light; 110-a rotation module; 111-rotating prism; 1111-an incident surface; 1112-an exit face; 112-spherical or curved mirrors; 1121-spherical reflecting surface or curved reflecting surface; 113-a rotary drive; 120-optical signal sorting module; 121-optical filters; 122-a polarizer; 130-a detection module; 131-a projection lens; 132-a detector; 133-a processor; 140-an optical mirror; 141-a transmissive region; 142-a reflective region; 151-a first telescope; 152-a second telescope; 200-a processing chamber; 201-a wafer to be tested; 202-a carrier table; 203-an optical window; f1, f 2-focal length; di-incident distance; do-the exit distance.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The embodiment of the application provides a wafer detection device, which can be used for performing non-destructive real-time detection on the defects of a wafer 201 to be detected in the manufacturing process of the wafer 201 to be detected, and can effectively reduce the anisotropy of a nonlinear optical signal in the detection process caused by the azimuth angle of the wafer 201 to be detected, and improve the detection accuracy of the wafer 201 to be detected.
Specifically, as shown in fig. 1, the wafer detecting apparatus of the embodiment of the present application includes a light source module 101, and a rotation module 110, an optical signal sorting module 120 and a detection module 130 that are disposed along a light path transmission direction of the light source module 101, where the rotation module 110 rotates around a main optical axis of the light source module 101; the fundamental wave beam emitted from the light source module 101 forms a ring-shaped incident light through a rotation period of the rotation module 110 and enters the wafer 201 to be tested in the processing apparatus, the fundamental wave beam reflected from the wafer 201 to be tested enters the optical signal sorting module 120 through the rotation module 110, the optical signal sorting module 120 sorts out the nonlinear optical signal and inputs the nonlinear optical signal into the detection module 130, and the detection module 130 detects the defect of the wafer 201 to be tested according to the nonlinear optical signal.
The light source module 101 is used for providing a fundamental wave light beam incident on the wafer 201 to be detected, and the light source module 101 includes a light source 1011 and a controller 1012, wherein the light source 1011 can be a laser, the light source 1011 is electrically connected with the controller 1012, and the controller 1012 can control parameters of the fundamental wave light beam output by the light source 1011. For example, the power, polarization, pulse, etc. of the fundamental wave beam emitted from the light source 1011 can be controlled by the controller 1012 as needed.
The rotation module 110 rotates around the main optical axis of the light source module 101, the rotation module 110 rotates for a rotation period, for example, after rotating 360 °, the fundamental wave beam emitted from the light source module 101 continuously enters the wafer 201 to be tested through the rotation module 110 in one rotation period, and thus, in a rotation period, after the fundamental wave light beam emitted from the light source module 101 is rotated by the rotation module 110, the wafer 201 to be tested is incident in any direction, the fundamental wave beam continuously incident on the wafer 201 to be tested can form a ring-shaped incident light, so that the azimuth angles of the wafer 201 to be tested in all directions can be mutually offset, the nonlinear optical signal is an integral of all azimuth angles of the wafer 201 to be tested, and when the azimuth angles of the wafer 201 to be tested in all directions are mutually offset, the anisotropy dependence on all azimuth angles disappears, so that the anisotropy of the nonlinear optical signal received by the detection module 130 is automatically eliminated.
The larger the rotation angle of the rotation module 110 in one rotation period is, the more thoroughly the anisotropy of the nonlinear optical signal received by the detection module 130 is eliminated, so that the detection result of the detection module 130 is more accurate. After the rotation module 110 rotates 360 °, all the azimuth errors of the wafer 201 to be measured can be eliminated theoretically, that is, the anisotropy of the nonlinear optical signal is eliminated.
Therefore, the rotation of the rotation module 110 can change the incident angle of the fundamental wave beam incident on the wafer 201 to an arbitrary value to compensate for the random loading direction of the wafer. The rotation module 110 is used for changing an incident direction and an incident plane (a plane defined by a propagation direction of an incident beam and a surface normal of the wafer 201 to be measured) of the fundamental wave beam incident on the wafer 201 to be measured, so that the fundamental wave beam incident on the wafer 201 to be measured forms annular incident light, all azimuth angle errors of the wafer 201 to be measured are reduced or eliminated, and anisotropy of a nonlinear optical signal is reduced or eliminated.
It should be noted that, during the inspection, the wafer 201 to be inspected is not rotated, so the fundamental wave beam incident on the wafer 201 to be inspected is always focused on a stationary point on the wafer 201 to be inspected, and after the rotation module 110 rotates, the fundamental wave beam continuously enters the wafer 201 to be inspected, which can be understood as that the fundamental wave beam enters the wafer 201 to be inspected as a ring-shaped fundamental wave beam in one rotation period.
Specifically, the rotation module 110 includes a rotation driver 113 and a rotation unit connected to the rotation driver 113, and the rotation driver 113 drives the rotation unit to rotate. The rotating unit rotates around the main optical axis of the light source module 101, and guides the fundamental wave beam emitted from the light source module 101 to the wafer 201 to be measured.
The rotation driver 113 may be a motor, and is connected to the rotation unit through an output shaft of the motor, and the output shaft of the motor rotates to drive the rotation unit to rotate.
As shown in fig. 2, the rotating unit further includes a rotating prism 111 located at the main optical axis of the light source module 101, and a spherical reflector or a curved reflector 112 annularly disposed on the same rotating radius of the rotating prism 111, the spherical reflector has a spherical reflective surface, the curved reflector has a curved reflective surface, the fundamental wave light beam emitted from the light source module 101 sequentially enters the wafer 201 through the incident surface 1111, the spherical reflective surface or the curved reflective surface 1121 of the rotating prism 111, and the fundamental wave light beam reflected from the wafer 201 then exits through the spherical reflective surface or the curved reflective surface 1121, and the exit surface 1112 of the rotating prism 111 to the optical signal sorting module 120.
The rotating prism 111 is arranged on a main optical axis of the light source module 101, the rotating prism 111 rotates along the main optical axis, a spherical reflector or a curved reflector 112 is further arranged on the same rotating radius as the rotating prism 111, the spherical reflector or the curved reflector 112 is circumferentially arranged around the rotating radius to form a spherical reflecting surface or a curved reflecting surface 1121, a fundamental wave beam emitted by the light source module 101 is incident on an incident surface 1111 of the rotating prism 111 and is emitted to the spherical reflecting surface or the curved reflecting surface 1121 through the incident surface 1111 of the rotating prism 111, the fundamental wave beam is emitted to the wafer 201 to be tested through the spherical reflecting surface or the curved reflecting surface 1121, the fundamental wave beam is emitted to the wafer 201 to be tested, the fundamental wave beam is reflected by the wafer 201 to be tested, the reflected fundamental wave beam is emitted to the spherical reflecting surface or the curved reflecting surface 1121, is emitted to an emitting surface 1112 of the rotating prism 111 through the spherical reflecting surface or the curved.
The spherical mirror or the curved mirror 112 has a spherical reflecting surface or a curved reflecting surface 1121, and rotates synchronously with the rotating prism 111 no matter where the rotating prism 111 rotates, so that the fundamental wave beam emitted from the incident surface 1111 of the rotating prism 111 and the fundamental wave beam reflected by the wafer 201 to be detected can always be incident on the spherical reflecting surface or the curved reflecting surface 1121, and finally are received by the detection module 130 through the optical signal sorting module 120.
In order to increase the reflectance of the fundamental wave beam incident on the rotating prism 111, a reflective film is provided on each of the incident surface 1111 of the rotating prism 111 and the emission surface 1112 of the rotating prism 111, and the reflectance of the incident fundamental wave beam is increased by plating the reflective films.
Illustratively, the rotating prism 111 includes two mirrors disposed opposite to each other, light-receiving surfaces of the two mirrors are disposed opposite to each other, a light-receiving surface of one mirror is the incident surface 1111 of the rotating prism 111, and a light-receiving surface of the other mirror is the exit surface 1112 of the rotating prism 111. Moreover, an included angle is formed between the light bearing surface and the horizontal plane, that is, the light bearing surface is an inclined surface, and the light bearing surface reflects the fundamental wave light beam toward the spherical reflection surface or the curved reflection surface 1121, so that the fundamental wave light beam is reflected between the light bearing surface and the spherical reflection surface or the curved reflection surface 1121.
The optical signal sorting module 120 is configured to sort out the nonlinear optical signal, and the detection module 130 performs detection according to the nonlinear optical signal, so as to obtain an atomic defect or a molecular defect in the wafer 201 to be detected.
The fundamental wave beam emitted from the light source module 101 enters the wafer 201 to be detected after passing through the rotating module 110, the wafer 201 to be detected reflects the fundamental wave beam and is obtained by the optical signal sorting module 120, and the optical signal sorting module 120 sorts out the nonlinear optical signal from the reflected fundamental wave beam and feeds back the nonlinear optical signal to the detection module 130.
Specifically, the optical signal sorting module 120 includes a first optical sheet and a second optical sheet sequentially arranged along the optical path transmission direction, where the first optical sheet is used to pass through a part of the fundamental wave beam having a preset wavelength or a preset polarization parameter and reflected by the wafer 201 to be tested, so as to form a transition optical signal; the second optical sheet is used for passing the transition optical signal with a preset polarization parameter or a preset wavelength to form a nonlinear optical signal.
The signal sorting can be realized by filtering the nonlinear optical signals with the preset polarization parameters first and then filtering the nonlinear optical signals with the preset polarization parameters, or filtering the nonlinear optical signals with the preset polarization parameters first and then filtering the nonlinear optical signals with the preset polarization parameters.
As shown in fig. 3, the first optical sheet may be a filter 121, and the second optical sheet is a polarizer 122, the filter 121 is configured to pass a fundamental wave beam having a predetermined wavelength and reflected by the wafer 201 to be tested, so as to form a transition optical signal; the polarizer 122 is used for passing the transient optical signal with preset polarization parameters to form a nonlinear optical signal.
Alternatively, as shown in fig. 4, the first optical sheet is a polarizer 122, the second optical sheet is an optical filter 121, and the polarizer 122 is configured to pass the fundamental wave beam reflected by the wafer 201 to be tested and having the preset polarization parameter to form the transition optical signal; the optical filter 121 is used for passing a transition optical signal having a preset wavelength to form a nonlinear optical signal.
The detection module 130 receives the nonlinear optical signal fed back by the optical signal sorting module 120, obtains defect information of the wafer 201 to be detected through the nonlinear optical signal, and outputs a detection result.
The nonlinear optical signal includes a sum frequency response signal, a second harmonic signal, a third harmonic signal, and the like.
The detection module 130 further includes a projection lens 131, a detector 132 and a processor 133 sequentially arranged along the optical path transmission direction, the detector 132 obtains the nonlinear optical signal output by the optical signal sorting module 120 through the projection lens 131 and feeds back the nonlinear optical signal to the processor 133, and the processor 133 performs analysis and processing according to the nonlinear optical signal and outputs a detection result.
To achieve full automation, the controller 1012 may also be connected to the rotation module 110 and the detection module 130, respectively. The controller 1012 controls the parameters of the fundamental wave beam emitted from the light source module 101, the controller 1012 controls the rotation of the rotation module 110, and the controller 1012 also controls the detection module 130 to detect.
The controller 1012 can control the fundamental wave beam emitted from the light source module 101 and the rotation of the rotation module 110 according to the detection result of the detection module 130, so as to control each detection link through the controller 1012. Meanwhile, according to the detection result, the frequency, polarization and other parameters of the fundamental wave beam output by the light source module 101 can be adjusted, and the rotation speed and the like of the rotation module 110 can be adjusted, so as to obtain a more accurate detection result.
As shown in fig. 5, the controller 1012 can be directly electrically connected to the light source 1011 of the light source module 101, the rotation driver 113 of the rotation module 110, and the detector 132 of the detection module 130, respectively, so that the detection module 130 does not need the processor 133.
As shown in fig. 6, the controller 1012 may also be electrically connected to the processor 133 of the detection module 130, and receive the detection data of the detection module 130 through the processor 133.
The wafer detection device that this application embodiment provided, light source module 101 outgoing fundamental wave light beam, through the rotation of rotatory module 110, make the fundamental wave light beam incide wafer 201 that awaits measuring with arbitrary direction, the fundamental wave light beam that wafer 201 that awaits measuring reflects sorts out nonlinear optical signal through sorting signal module, detects the defect that module 130 detected wafer 201 that awaits measuring according to nonlinear optical signal. The rotating module 110 changes the incident direction and the incident plane of the fundamental wave beam, and in a rotating period, the fundamental wave beam continuously incident to the wafer 201 to be detected can form annular incident light, and the azimuth angles of different positions of the wafer 201 to be detected can be mutually offset, which is helpful for reducing or eliminating the difference of the azimuth angle errors of different positions of the wafer 201 to be detected, thereby reducing or eliminating the anisotropy of the nonlinear optical signal and improving the detection accuracy.
An optical mirror 140 is further provided between the light source module 101 and the rotation module 110 along the optical path transmission direction of the light source module 101, and the fundamental wave light beam emitted from the light source module 101 enters the rotation module 110 through the optical mirror 140.
As shown in fig. 7, the optical mirror 140 includes a transmission area 141 and a reflection area 142, the fundamental wave beam emitted from the light source module 101 is emitted to the rotation module 110 through the transmission area 141, and the fundamental wave beam reflected from the wafer 201 to be measured is emitted to the optical signal sorting module 120 through the reflection area 142.
Illustratively, the transmissive region 141 is located at a central portion of the optical mirror 140, and the two reflective regions 142 are respectively located at two sides of the transmissive region 141. The fundamental wave beam emitted from the light source module 101 is transmitted through the transmission region 141, and then enters the rotating prism 111 of the rotating module 110, and then is emitted to the wafer 201 to be measured through the spherical mirror or the curved mirror 112, after the wafer 201 to be measured reflects the fundamental wave beam, the reflected fundamental wave beam sequentially enters the reflection region 142 of the optical lens 140 through the spherical mirror or the curved mirror 112 and the rotating prism 111, and is emitted to the optical signal sorting module 120 after being reflected by the reflection region 142.
The optical mirror 140 may be a hollow mirror, i.e., the central portion is hollow, and both sides are used for transmission or reflection, and the fundamental wave beam can directly pass through the hollow central portion, thereby achieving the above-mentioned effects.
The above effect can also be achieved by a dichroic mirror. Specifically, the optical mirror 140 is a dichroic mirror, the fundamental wave light beam emitted from the light source module 101 is transmitted to the rotation module 110 through the dichroic mirror, and the fundamental wave light beam reflected by the wafer 201 to be measured is reflected to the optical signal sorting module 120 through the dichroic mirror.
The dichroic mirror transmits light or reflects light according to wavelength to realize spectral splitting. The fundamental wave light beam emitted by the light source module 101 and the fundamental wave light beam reflected by the wafer 201 to be measured have different wavelengths, so that the transmission or reflection can be realized according to different wavelengths through the dichroic mirror.
In addition, a confocal module is disposed between the rotation module 110 and the optical signal sorting module 120 to reduce the rotation radius of the nonlinear optical signal beam generated by the wafer 201 to be tested, and the fundamental wave beam reflected by the wafer 201 to be tested is shaped by the confocal module and then enters the optical signal sorting module 120.
As shown in fig. 8, the confocal module includes a first telescope 151 and a second telescope 152 sequentially arranged along the optical path transmission direction, and the distance between the first telescope 151 and the second telescope 152 is equal to the sum of the focal length f1 of the first telescope 151 and the focal length f2 of the second telescope 152.
The first telescope 151 and the second telescope 152 form a focal length telescope, have an angular magnification M, M = focal length f 1/focal length f2, and can reduce the fundamental beam deviation. The nonlinear optical signal beam deviation can be reduced to 1/M, where M = incident distance Di/outgoing distance Do, the incident distance Di is the distance between two beams entering the first telescope 151, and the outgoing distance Do is the distance between the two beams entering the first telescope 151 after they exit through the second telescope 152.
Through confocal module with the size reduction of the radius of rotation of nonlinear optical signal light beam, be convenient for incide subsequent optical signal letter sorting module.
In summary, in the wafer inspection apparatus provided in this embodiment, the fundamental light beam is emitted from the light source module 101, the fundamental light beam is incident on the rotating prism 111 through the optical lens 140, before the fundamental light beam emitted from the light source module 101 is incident on the rotating prism 111, the fundamental light beam is fixed and non-rotating, the rotating module 110 rotates around the main optical axis, the fundamental light beam is incident on the rotating prism 111, and then is emitted to the wafer 201 through the spherical mirror or the curved mirror 112, the fundamental light beam reflected by the wafer 201 is emitted to the spherical mirror or the curved mirror 112, and then is sequentially incident on the optical lens 140 through the rotating prism 111 (for example, the fundamental light beam reflected by the wafer 201 in fig. 2 is two reflected lights, one reflected light 102A is indicated by a solid line, and the other reflected light 102B is indicated by a dotted line), the confocal module (the first telescope 151, the second telescope 152), and the optical signal, A second optical sheet), a detection module 130 (a projection lens 131, a detector 132 and a processor 133), the fundamental wave beam can change the incident direction and the incident plane of the fundamental wave beam incident on the wafer 201 after rotating by the rotation module 110, the fundamental wave beam reflected by the wafer 201 enters the rotation module 110 for collimation, the fundamental wave beam reflected by the wafer 201 rotates along the ring, the wafer 201 generates a nonlinear optical signal beam (it can be understood that the fundamental wave beam reflected by the wafer 201 includes the original fundamental wave and nonlinear optical signal beam, the fundamental wave is filtered out in the optical signal sorting module 120), after the rotation radius of the nonlinear optical signal beam is reduced by the confocal module, the incident optical signal sorting module 120 enters the optical signal sorting module 120, the fundamental wave is filtered out in the optical signal sorting module 120 to obtain the nonlinear optical signal, the detector 132 obtains the nonlinear optical signal, the defect information of the wafer 201 to be detected is obtained after being processed and analyzed by the processor 133, and the detection is completed.
The embodiment of the application also discloses an online complete set of equipment, which comprises a processing device and the wafer detection device of the embodiment. The processing device comprises a processing chamber 200 and a bearing table 202 arranged in the processing chamber 200, wherein the processing chamber 200 is used for processing a wafer 201 to be detected on the bearing table 202, the processing chamber 200 is provided with an optical window 203, and a fundamental wave beam emitted by a light source module 101 of the wafer detection device is incident to the wafer 201 to be detected through the optical window 203 so as to detect the defects of the wafer 201 to be detected in the processing process of the wafer 201 to be detected.
The wafer 201 to be detected is manufactured through the processing device, the wafer detection device carries out real-time online detection on the defects of the wafer 201 to be detected, the detection is carried out while the process is carried out, and the nondestructive defect detection is realized.
The on-line complete equipment comprises the same structure and beneficial effects as the wafer detection device in the previous embodiment. The structure and the advantageous effects of the wafer inspection apparatus have been described in detail in the foregoing embodiments, and are not repeated herein.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (12)
1. A wafer detection device is characterized by comprising a light source module, a rotation module, an optical signal sorting module and a detection module, wherein the rotation module, the optical signal sorting module and the detection module are arranged along the light path transmission direction of the light source module, and the rotation module rotates by taking a main optical axis of the light source module as a center;
the fundamental wave light beam emitted by the light source module forms annular incident light through one rotation period of the rotation module and enters a wafer to be detected in the processing device, the fundamental wave light beam reflected by the wafer to be detected enters the optical signal sorting module after passing through the rotation module, nonlinear optical signals sorted by the optical signal sorting module are input into the detection module, and the detection module detects the defects of the wafer to be detected according to the nonlinear optical signals.
2. The wafer detection apparatus according to claim 1, wherein an optical mirror is further disposed between the light source module and the rotation module along the optical path transmission direction of the light source module, and the fundamental wave light beam emitted from the light source module is incident on the rotation module through the optical mirror.
3. The wafer detection apparatus as claimed in claim 2, wherein the optical mirror includes a transmission area and a reflection area, the fundamental wave beam emitted from the light source module is directed to the rotation module through the transmission area, and the fundamental wave beam reflected from the wafer to be tested is directed to the optical signal sorting module through the reflection area.
4. The wafer inspection device of claim 3, wherein the optical mirror is a hollow mirror.
5. The wafer inspection apparatus as claimed in claim 2, wherein the optical mirror is a dichroic mirror, the fundamental wave light beam emitted from the light source module is transmitted to the rotation module through the dichroic mirror, and the fundamental wave light beam reflected from the wafer to be inspected is reflected to the optical signal sorting module through the dichroic mirror.
6. The wafer detection apparatus according to any one of claims 1 to 5, wherein the rotation module includes a rotation driver and a rotation unit connected to the rotation driver, the rotation driver drives the rotation unit to rotate, the rotation unit rotates around a main optical axis of the light source module, and guides a fundamental wave beam emitted from the light source module to the wafer to be detected.
7. The wafer detection apparatus according to claim 6, wherein the rotation unit includes a rotation prism located at a main optical axis of the light source module, and a spherical reflector or a curved reflector annularly disposed on the same rotation radius of the rotation prism, the spherical reflector has a spherical reflective surface, the curved reflector has a curved reflective surface, the fundamental wave beam emitted from the light source module sequentially passes through an incident surface of the rotation prism, the spherical reflective surface or the curved reflective surface to enter the wafer to be detected, and the fundamental wave beam reflected from the wafer to be detected passes through the spherical reflective surface or the curved reflective surface and the exit surface of the rotation prism to irradiate the optical signal sorting module.
8. The wafer detection device as claimed in claim 7, wherein the incident surface of the rotating prism and the exit surface of the rotating prism are respectively provided with a reflective film.
9. The wafer detection apparatus according to claim 7, wherein the rotating prism includes two reflectors disposed opposite to each other, light receiving surfaces of the two reflectors are disposed opposite to each other, and an included angle is formed between the light receiving surface and a horizontal plane, and the light receiving surface reflects the fundamental wave beam toward the spherical reflection surface or the curved reflection surface.
10. The apparatus as claimed in claim 1, wherein a confocal module is disposed between the rotation module and the optical signal sorting module to reduce a rotation radius of a nonlinear optical signal beam generated by the wafer to be tested.
11. The wafer detection device according to claim 1, wherein the light source module comprises a light source and a controller connected to the light source, and the controller controls the light source to output a fundamental wave light beam.
12. An online complete equipment, characterized in that, including processingequipment and the wafer detection device of any one of claims 1-11, processingequipment includes the treatment chamber and establishes the plummer in the treatment chamber, the treatment chamber is used for to being located the wafer processing of awaiting measuring on the plummer, the treatment chamber is equipped with optical window, the fundamental wave light beam of wafer detection device's light source module outgoing passes through optical window incides the wafer of awaiting measuring, with detect in the wafer processing of awaiting measuring the defect of the wafer of awaiting measuring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011413410.0A CN112198169B (en) | 2020-12-07 | 2020-12-07 | Wafer detection device and on-line complete equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011413410.0A CN112198169B (en) | 2020-12-07 | 2020-12-07 | Wafer detection device and on-line complete equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112198169A true CN112198169A (en) | 2021-01-08 |
| CN112198169B CN112198169B (en) | 2021-04-02 |
Family
ID=74033831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011413410.0A Active CN112198169B (en) | 2020-12-07 | 2020-12-07 | Wafer detection device and on-line complete equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112198169B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114113138A (en) * | 2021-11-22 | 2022-03-01 | 合肥维信诺科技有限公司 | Product registration detection device |
| CN114280701A (en) * | 2021-12-30 | 2022-04-05 | 拓荆科技股份有限公司 | Optical lighting device and optical modification equipment |
| CN114325889A (en) * | 2021-12-30 | 2022-04-12 | 拓荆科技股份有限公司 | Optical lighting device and optical modification equipment |
| CN114325891A (en) * | 2021-12-30 | 2022-04-12 | 拓荆科技股份有限公司 | Reflection module, optical lighting device and optical modification equipment |
| CN114324369A (en) * | 2022-03-11 | 2022-04-12 | 北京新研创能科技有限公司 | System and method for detecting scratches on surface of bipolar plate |
| CN114371522A (en) * | 2021-12-30 | 2022-04-19 | 拓荆科技股份有限公司 | Optical lighting device and optical modification equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1665637A (en) * | 2002-08-28 | 2005-09-07 | 詹诺普蒂克自动化技术有限公司 | Beam formation unit comprising two axicon lenses, and device comprising one such beam formation unit for introducing radiation energy into a workpiece consisting of a weakly-absorbent material |
| CN102095571A (en) * | 2010-12-02 | 2011-06-15 | 杭州奥普特光学有限公司 | Automatic lensmeter |
| CN110006905A (en) * | 2019-01-25 | 2019-07-12 | 杭州晶耐科光电技术有限公司 | A kind of ultra-clean smooth surface defect detecting device of heavy caliber that line area array cameras combines |
| CN110969598A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Wafer inspection method and wafer inspection system |
| CN111415875A (en) * | 2019-07-24 | 2020-07-14 | 紫创(南京)科技有限公司 | Semiconductor detection device, detection method and semiconductor process device |
-
2020
- 2020-12-07 CN CN202011413410.0A patent/CN112198169B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1665637A (en) * | 2002-08-28 | 2005-09-07 | 詹诺普蒂克自动化技术有限公司 | Beam formation unit comprising two axicon lenses, and device comprising one such beam formation unit for introducing radiation energy into a workpiece consisting of a weakly-absorbent material |
| CN102095571A (en) * | 2010-12-02 | 2011-06-15 | 杭州奥普特光学有限公司 | Automatic lensmeter |
| CN110969598A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Wafer inspection method and wafer inspection system |
| CN110006905A (en) * | 2019-01-25 | 2019-07-12 | 杭州晶耐科光电技术有限公司 | A kind of ultra-clean smooth surface defect detecting device of heavy caliber that line area array cameras combines |
| CN111415875A (en) * | 2019-07-24 | 2020-07-14 | 紫创(南京)科技有限公司 | Semiconductor detection device, detection method and semiconductor process device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114113138A (en) * | 2021-11-22 | 2022-03-01 | 合肥维信诺科技有限公司 | Product registration detection device |
| CN114280701A (en) * | 2021-12-30 | 2022-04-05 | 拓荆科技股份有限公司 | Optical lighting device and optical modification equipment |
| CN114325889A (en) * | 2021-12-30 | 2022-04-12 | 拓荆科技股份有限公司 | Optical lighting device and optical modification equipment |
| CN114325891A (en) * | 2021-12-30 | 2022-04-12 | 拓荆科技股份有限公司 | Reflection module, optical lighting device and optical modification equipment |
| CN114371522A (en) * | 2021-12-30 | 2022-04-19 | 拓荆科技股份有限公司 | Optical lighting device and optical modification equipment |
| CN114324369A (en) * | 2022-03-11 | 2022-04-12 | 北京新研创能科技有限公司 | System and method for detecting scratches on surface of bipolar plate |
| CN114324369B (en) * | 2022-03-11 | 2022-06-07 | 北京新研创能科技有限公司 | System and method for detecting scratches on surface of bipolar plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112198169B (en) | 2021-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112198169B (en) | Wafer detection device and on-line complete equipment | |
| KR100917912B1 (en) | Single-Polarizer Focused-Beam Ellipsometer | |
| EP2181317B1 (en) | Broad-range spectrometer | |
| US20110249256A1 (en) | Laser beam analysis apparatus | |
| JPH11501727A (en) | Product surface inspection system and method | |
| CN103477206B (en) | Optical anisotropy's parameter measuring apparatus, measuring method and measurement system | |
| WO2012145966A1 (en) | Wafer inspection method and wafer inspection apparatus | |
| US20070263220A1 (en) | Optical Measurement System with Simultaneous Multiple Wavelengths, Multiple Angles of Incidence and Angles of Azimuth | |
| JP2012189587A (en) | Improvement for defect detection system | |
| CN109935531B (en) | Surface detection device, system and method | |
| CN109425619B (en) | Optical measurement system and method | |
| WO2015038472A1 (en) | Low noise, high stability, deep ultra-violet, continuous wave laser | |
| CN111948783A (en) | Incident light angle continuous adjustable device and angle continuous adjusting method | |
| US8958062B2 (en) | Defect inspection method and device using same | |
| US11047675B2 (en) | Method and apparatus for inspection of spherical surfaces | |
| CN110763689B (en) | Surface detection device and method | |
| CN212483957U (en) | Incident light angle continuous adjustable device | |
| US10641713B1 (en) | Phase retardance optical scanner | |
| US11852592B2 (en) | Time domain multiplexed defect scanner | |
| US20220187218A1 (en) | Angle independent optical surface inspector | |
| WO1993019350A1 (en) | A method of and a device for measuring optical radiation | |
| US20220269071A1 (en) | Scanning micro profiler | |
| JPS63208746A (en) | Defect inspecting device | |
| RU71005U1 (en) | DEVICE FOR MEASURING WAVE ABERRATIONS OF A SPHERICAL MIRROR | |
| KR20230121497A (en) | Foreign matter detection device using terahertz wave |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |