CN112189006B - 次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法 - Google Patents

次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法 Download PDF

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CN112189006B
CN112189006B CN201980034553.XA CN201980034553A CN112189006B CN 112189006 B CN112189006 B CN 112189006B CN 201980034553 A CN201980034553 A CN 201980034553A CN 112189006 B CN112189006 B CN 112189006B
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solution
quaternary alkylammonium
hypochlorite solution
reaction
quaternary
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CN112189006A (zh
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下田享史
吉川由树
根岸贵幸
东野诚司
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Tokuyama Corp
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Tokuyama Corp
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B11/00—Oxides or oxyacids of halogens; Salts thereof
    • C01B11/04—Hypochlorous acid
    • C01B11/06—Hypochlorites
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/68—Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/82—Purification; Separation; Stabilisation; Use of additives
    • C07C209/90—Stabilisation; Use of additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201980034553.XA 2018-05-23 2019-05-20 次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法 Active CN112189006B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311548047.7A CN117567296A (zh) 2018-05-23 2019-05-20 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法

Applications Claiming Priority (7)

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JP2018-099224 2018-05-23
JP2018099224 2018-05-23
JP2018-099223 2018-05-23
JP2018099223 2018-05-23
JP2018-116832 2018-06-20
JP2018116832 2018-06-20
PCT/JP2019/019898 WO2019225541A1 (ja) 2018-05-23 2019-05-20 次亜塩素酸第４級アルキルアンモニウム溶液、その製造方法および半導体ウエハの洗浄方法

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CN112189006B true CN112189006B (zh) 2023-11-21

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CN202311548047.7A Pending CN117567296A (zh) 2018-05-23 2019-05-20 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法

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US (1) US11572533B2 (enExample)
EP (1) EP3798207A4 (enExample)
JP (3) JP6982686B2 (enExample)
KR (2) KR102764031B1 (enExample)
CN (2) CN112189006B (enExample)
TW (2) TWI876529B (enExample)
WO (1) WO2019225541A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102769981B1 (ko) 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
US20230207329A1 (en) * 2020-02-25 2023-06-29 Tokuyama Corporation Treatment liquid for semiconductor with ruthenium
WO2021210682A1 (ja) * 2020-04-17 2021-10-21 株式会社トクヤマ ハロゲン酸素酸溶液の製造方法
JP2022008214A (ja) * 2020-06-25 2022-01-13 株式会社トクヤマ ハロゲン酸素酸溶液の製造方法及び製造装置
JP7405992B2 (ja) 2020-07-31 2023-12-26 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
CN112337419B (zh) * 2020-10-27 2022-05-13 浙江花蝶染料化工有限公司 一种4-(1-羟基-1-甲基乙基)-2-丙基咪唑-5-羧酸乙酯的制备方法
KR102352780B1 (ko) 2021-04-30 2022-01-18 김을환 차아염소산 및 그 이온을 포함하는 잔류염소 생성용 전극 및 이를 구비하는 차아염소산 및 그 이온을 포함하는 잔류염소 생성 장치
CN115916741B (zh) * 2021-06-07 2025-08-08 株式会社德山 卤素含氧酸的制造方法及其制造装置
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
CN1954267A (zh) * 2004-02-11 2007-04-25 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU572896B2 (en) * 1983-11-09 1988-05-19 Sumitomo Chemical Company, Limited 2-phenylbenzotriazoles
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
JP5405129B2 (ja) * 2009-01-05 2014-02-05 三菱マテリアル株式会社 ペルフルオロアルキルスルホン酸塩の製造方法
JP5384719B2 (ja) * 2010-02-22 2014-01-08 Ｊｘ日鉱日石金属株式会社 高純度スルホン酸銅水溶液及びその製造方法
MY171421A (en) * 2012-08-31 2019-10-12 Lion Corp Method for producing polyoxyethylene alkyl ether sulfate
JP2014062297A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
JP5848690B2 (ja) 2012-11-26 2016-01-27 三洋化成工業株式会社 第四級塩溶液の製造方法
JP6401491B2 (ja) * 2013-08-28 2018-10-10 オルガノ株式会社 分離膜のスライム抑制方法、逆浸透膜またはナノろ過膜用スライム抑制剤組成物、および分離膜用スライム抑制剤組成物の製造方法
US11390829B2 (en) * 2018-01-16 2022-07-19 Tokuyama Corporation Treatment liquid for semiconductor wafers, which contains hypochlorite ions
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
CN1954267A (zh) * 2004-02-11 2007-04-25 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Oxidation of gem-chloronitroso- and vic-chloronitroso-alkanes and -cycloalkanes to respective chloronitro compounds by novel cetyltrimethylammonium hypochlorite reagent;ABDULKARIM HA MOHAMMED 等;《J.Chem.Sci.》;20110731;第123卷(第4期);第433-441页 *

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KR20210015796A (ko) 2021-02-10
JP2023126263A (ja) 2023-09-07
JP2022003132A (ja) 2022-01-11
TWI876529B (zh) 2025-03-11
WO2019225541A1 (ja) 2019-11-28
JP7303268B2 (ja) 2023-07-04
KR102764031B1 (ko) 2025-02-07
US20210309942A1 (en) 2021-10-07
JP6982686B2 (ja) 2021-12-17
US11572533B2 (en) 2023-02-07
TWI818024B (zh) 2023-10-11
EP3798207A4 (en) 2022-03-23
CN117567296A (zh) 2024-02-20
TW202003446A (zh) 2020-01-16
KR102812765B1 (ko) 2025-05-26
JP7480397B2 (ja) 2024-05-09
KR20240073135A (ko) 2024-05-24
CN112189006A (zh) 2021-01-05
JPWO2019225541A1 (ja) 2021-02-12
TW202400554A (zh) 2024-01-01
EP3798207A1 (en) 2021-03-31

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