CN112151560A - 图像传感器封装件和相关方法 - Google Patents

图像传感器封装件和相关方法 Download PDF

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Publication number
CN112151560A
CN112151560A CN202010522178.8A CN202010522178A CN112151560A CN 112151560 A CN112151560 A CN 112151560A CN 202010522178 A CN202010522178 A CN 202010522178A CN 112151560 A CN112151560 A CN 112151560A
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Prior art keywords
image sensor
optically transmissive
coupled
substrate
wafer
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CN202010522178.8A
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English (en)
Inventor
O·L·斯吉特
B·A·瓦尔特斯塔
D·戈驰努尔
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Publication of CN112151560A publication Critical patent/CN112151560A/zh
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Abstract

本发明题为“图像传感器封装件和相关方法”。图像传感器封装件的实施方式可包括：多个微透镜，该多个微透镜耦接在滤色器阵列(CFA)上方；低折射率层，该低折射率层直接耦接至该多个微透镜并且在其上方；粘合剂，该粘合剂直接耦接至该低折射率层并且在其上方；和光学透射盖，该光学透射盖直接耦接至该粘合剂并且在其上方。实施方式可包括在光学透射盖和多个微透镜之间不存在间隙。

Description

图像传感器封装件和相关方法
技术领域
本文档的各方面整体涉及图像传感器和图像传感器封装件。
背景技术
图像传感器通过响应于入射电磁辐射传送信号来传达与图像有关的信息。图像传感器用于多种设备中，包括智能电话、数码相机、夜视设备、医学成像器和许多其他设备。存在各种类型的图像传感器，诸如CMOS图像传感器(CIS)和电荷耦合器件(CCD)。
发明内容
图像传感器封装件的实施方式可包括：多个微透镜，该多个微透镜耦接在滤色器阵列(CFA)上方；低折射率层，该低折射率层直接耦接至多个微透镜并且在其上方；粘合剂，该粘合剂直接耦接至低折射率层并且在其上方；和光学透射盖，该光学透射盖直接耦接至粘合剂并且在其上方。实施方式可包括在该光学透射盖和该多个微透镜之间不存在间隙。
图像传感器封装件的实施方式可包括以下各项中的一者、全部或任一者：
低折射率层可包含丙烯酸类树脂、聚合物树脂、一种无机填料、多种无机填料、气凝胶材料中的一者或它们的任何组合。
低折射率层可包括1.2的折射率。
低折射率层可包括小于5微米的厚度。
粘合剂层可直接耦接至光学透射盖的整个表面。
图像传感器封装件的实施方式可包括：衬底的通过多个电触点耦接至数字信号处理器第一侧、和耦接至衬底的第一侧的图像传感器。图像传感器封装件的实施方式还可包括耦接在衬底上方的底层填料层、耦接在图像传感器上方的多个微透镜和耦接在多个微透镜上方的光学透射盖。实施方式可包括在光学透射盖和多个微透镜之间不存在间隙
图像传感器封装件的实施方式可包括以下各项中的一者、全部或任一者：
实施方式可包括模塑料，该模塑料直接耦接至衬底的第一侧并且耦接至光学透射盖、图像传感器、数字信号处理器和底层填料层的两个或更多个侧面。
实施方式可包括模塑料，该模塑料直接耦接在光学透射盖的第一表面上方，该第一表面与光学透射盖的面向多个微透镜的第二表面相对。
图像传感器封装件可包括耦接在光学透射盖和多个微透镜之间的粘合剂和低折射率层。
图像传感器可堆叠在数字信号处理器上方，并且数字信号处理器可在其中包括多个穿硅通孔。
低折射率层可包含丙烯酸类树脂、聚合物树脂、一种无机填料、多种无机填料、气凝胶材料中的一个或它们的任何组合。
光学透射盖的周长可小于衬底的周长。
低折射率层可包括1.2的折射率。
形成图像传感器封装件的方法的实施方式可包括：将图像传感器晶圆接合至数字信号处理器晶圆；将数字信号处理器晶圆背面研磨至预定厚度；以及将光学透射衬底耦接在图像传感器晶圆上方。实施方式可包括在光学透射衬底和图像传感器晶圆之间不存在间隙。形成图像传感器封装件的方法的实施方式还可包括：使用光学透射衬底作为支撑件；通过氧化物层暴露多个电焊盘；将多个电触点耦接至多个电焊盘；以及将光学透射衬底、图像传感器晶圆和数字信号处理器晶圆切割成多个光学透射盖、图像传感器管芯和数字信号处理器管芯。
形成图像传感器封装件的方法的实施方式可包括以下各项中的一项、全部或任一项：
实施方式可包括将模塑料耦接至每个图像传感器管芯、数字信号处理器管芯和光学透射盖的两个或更多个侧壁。
实施方式可包括在数字信号处理器晶圆中形成多个穿硅通孔。
实施方式可包括在多个电触点中的每个电触点之间施加底层填料化合物。
实施方式可包括沿着光学透射衬底的整个表面施加光学透射粘合剂。
实施方式可包括在图像传感器晶圆上方施加低折射率层。
低折射率层可包括1.2的折射率。
对于本领域的普通技术人员而言，通过说明书和附图并且通过权利要求书，上述以及其他方面、特征和优点将会显而易见。
附图说明
将在下文中结合附图来描述实施方式，在附图中类似标号表示类似元件，并且：
图1是图像传感器封装件的一部分的横截面侧视图；
图2是图像传感器封装件的横截面侧视图；
图3是耦接至数字信号处理器晶圆的图像传感器晶圆的横截面侧视图；
图4是具有减薄的数字信号处理器晶圆并在其中形成的穿硅通孔的图3的视图。
图5是耦接至数字信号处理器晶圆的载体晶圆的横截面侧视图；
图6是具有减薄的图像传感器晶圆的图5的视图；
图7是耦接至滤色器阵列的图6的图像传感器晶圆的横截面侧视图；
图8是耦接至图7的图像传感器晶圆和载体晶圆的盖的横截面侧视图；
图9是移除了载体晶圆的图5的盖和图像传感器晶圆的横截面侧视图；
图10是具有暴露的电焊盘的图9的图像传感器晶圆的横截面侧视图；
图11是具有耦接至电焊盘的多个电触点的图10的图像传感器晶圆的横截面侧视图；
图12是电触点的侧视图；
图13是耦接至衬底的图像传感器的横截面侧视图；
图14是施加至衬底的焊剂层的侧视图；
图15是具有安装在衬底上的球栅阵列的芯片的侧视图；
图16是回流之后的图15的芯片和衬底的侧视图；
图17是移除焊剂之后的图16的视图；
图18是施加至衬底的浆料的侧视图；
图19是移除模版并将芯片定位在衬底上方的图18的视图；
图20是在使浆料回流之后接合至衬底的图18的芯片的视图；
图21是图像传感器封装件的视图；
图22是耦接至数字信号处理器晶圆的图像传感器晶圆的横截面侧视图；
图23是具有耦接在图像传感器晶圆上方的滤色器阵列的图22的视图；
图24是具有耦接在滤色器阵列上方的盖的图23的视图；
图25是具有减薄的数字信号处理器晶圆并在其中形成的穿硅通孔的图24的视图；并且
图26是具有掩模层的图像传感器封装件的实施方式的横截面侧视图。
具体实施方式
本公开、其各方面以及实施方式并不限于本文所公开的具体部件、组装工序或方法要素。符合预期图像传感器封装件的本领域已知的许多另外的部件、组装工序和/或方法元素将显而易见地能与本公开的特定实施方式一起使用。因此，例如，尽管本发明公开了特定实施方式，但是此类实施方式和实施部件可包括符合预期操作和方法的本领域已知的用于此类图像传感器封装件以及实施部件和方法的任何形状、尺寸、样式、类型、型号、版本、量度、浓度、材料、数量、方法元素、步骤等。
参见图1，示出了图像传感器封装件的一部分的横截面侧视图。在各种实施方式中，图像传感器封装件2可包括耦接在图像传感器上方的滤色器阵列(CFA)4。图像传感器可以是CMOS图像传感器(CIS)或任何其他类型的图像传感器。如图1所示，图像传感器封装件2可包括耦接至CFA 4并且在其上方的多个微透镜6。
在各种实施方式中，图像传感器封装件2包括耦接至多个微透镜6并且在其上方的低折射率层8。在特定实施方式中，并且如图所示，低折射率层8直接耦接至多个微透镜。如图所示，低折射率层8可在CFA和微透镜6上方形成水平层。在其他实施方式中，附加层可将多个微透镜6与低折射率层8分开。低折射率层8是光学透射的。在各种实施方式中，低折射率层8具有1.2的折射率。在其他实施方式中，低折射率层8可具有大于或小于1.2的折射率。
在各种实施方式中，低折射率层8可小于5微米(μm)厚。在特定实施方式中，低折射率层8可以是1.2μm厚。在其他实施方式中，低折射率层8的厚度可大于5μm厚。在特定实施方式中，低折射率层8包括一个或多个聚合物层。作为非限制性示例，一个或多个聚合物层可包含一种或多种聚合物树脂、一种或多种丙烯酸类树脂、一种无机填料、多种无机填料、一种气凝胶材料、多种气凝胶材料、它们的任何组合或降低一个或多个低折射率层的密度的任何其他分子材料。在特定实施方式中，低折射率层可包括由日本川崎的东京应化工业株式会社(Tokyo Ohka Kogyo Co.，LTD)以商品名LAL-2020TM销售的材料。在其他实施方式中，低折射率层8可包含其他材料。
在各种实施方式中，图像传感器封装件2包括耦接至低折射率层8并且在其上方的粘合剂10。在特定实施方式中，粘合剂10直接耦接至低折射率层8，并且可直接耦接至光学透射盖的整个表面。在其他实施方式中，附加层可将低折射率层8与粘合剂10分开。虽然图1示出了位于低折射率层8上方的粘合剂10，但在其他实施方式中，低折射率层8可位于光学透射盖12和粘合剂10上方或之间。粘合剂10为光学透射的。在各种实施方式中，粘合剂可以是40μm厚。在其他实施方式中，粘合剂可大于或小于40μm厚。
在各种实施方式中，粘合剂10可包括1.5的折射率。在其他实施方式中，粘合剂10可具有大于或小于1.5的折射率。
仍然参见图1，图像传感器封装件包括耦接至粘合剂并且在其上方的光学透射盖12。如图所示，光学透射盖12可直接耦接至粘合剂10。在其他实施方式中，其他材料可将光学透射盖12和粘合剂10分开。光学透射盖12可以是光学透明的或半透明的。在特定实施方式中，光学透射盖12可包括玻璃。在其他实施方式中，光学透射盖12可包括除玻璃之外的其他材料。在各种实施方式中，光学透射盖可以是400μm厚。在其他实施方式中，光学透射盖可大于或小于400μm厚。
参见图26，示出了具有掩模层的图像传感器封装件的实施方式。图26的图像传感器封装件160可类似于图1的图像传感器封装件2，不同之处在于图像传感器封装件160可包括耦接在低折射率层164上方/之内的掩模层162。在各种实施方式中，半导体封装件可包括耦接在低折射率层164的周边上方的掩模层162。在此类实施方式中，掩模层162可嵌入粘合剂166和/或低折射率层164内。在其他实施方式中，掩模层162可耦接在低折射率层164下方。在其他实施方式中，掩模层162可嵌入低折射率层164内。在各种实施方式中，掩模层可遮蔽从任何接合焊盘168或位于管芯的边缘处的其他反射表面反射的光。图26中的掩模层162延伸跨过图像传感器管芯的迹道区域或边缘区域。在所有实施方式中，掩模层162防止从迹道区域或管芯区域中的金属结构168反射光，当图像传感器在使用时，该反射可引起光学效应，如光斑。
在各种实施方式中，并且如图1和图26所示，在光学透射盖和多个微透镜之间不存在间隙或空腔。相反，光学透射盖12和多个微透镜6之间的整个空间填充有粘合剂10和低折射率层8。因此，此类封装件可被认为是“无间隙的”。本文所公开的无间隙图像传感器封装件的各种实施方式可出乎意料地具有类似于在图像传感器上方具有空腔的图像传感器封装件的光学性能。这是出乎意料的，因为低折射率层8和粘合剂10二者均具有高于空气的折射率。然而，当具有1.2的折射率的低折射率层8和具有1.5的折射率的粘合剂10被直接放置在图像传感器上方并且填充图像传感器和光学透射盖12之间的所有空间时，这两层的组合出乎意料地产生与在图像传感器和盖之间具有空气填充空腔的图像传感器相当的图像传感器的光学性能。除了别的以外，无间隙图像传感器封装件还允许具有较低轮廓的图像传感器封装件(因为不需要在图像传感器和盖之间具有空腔)，而不损害图像传感器的光学性能。
在各种实施方式中，形成图像传感器封装件的无间隙部分的方法可包括将低折射率层(包括本文所公开的任何类型的低折射率层)施加在多个微透镜和图像传感器层上方。该方法还可包括将粘合剂(包括本文所公开的任何粘合剂)施加至光学透射衬底。在各种实施方式中，可将粘合剂旋涂至光学透射衬底上。粘合剂可覆盖光学透射衬底的整个表面。在各种实施方式中，该方法包括将粘合剂接合至低折射率层。在特定实施方式中，粘合剂可直接接合至低折射率层。在各种实施方式中，该方法可包括通过紫外(UV)固化或另一种固化工艺来固化粘合剂。该方法还可包括将光学透射衬底、粘合剂、低折射率层和图像传感器晶圆切割成多个图像传感器封装件。
在包括掩模层的实施方式中，该方法可包括施加掩模层以及在施加低折射率层之前或之后将掩模层图案化。
参见图2，示出了图像传感器封装件的横截面侧视图。图像传感器封装件14可以是倒装芯片封装或任何其他类型的封装件。如图所示，图像传感器封装件14包括光学透射盖16。光学透射盖16可与本文所公开的任何类型的盖相同或类似。光学透射盖16耦接在多个微透镜18上方。在各种实施方式中，虽然在图2中难以看出，因为它更接近于按比例绘制，但是低折射率层20直接耦接至多个微透镜18并且在其上方。低折射率层20可与本文所公开的任何低折射率层相同。在各种实施方式中，粘合剂22可直接耦接至低折射率层20并且在其上方。粘合剂22可与本文所公开的任何粘合剂相同。粘合剂22还可直接耦接至光学透射盖16的整个表面。因此，类似于关于图1所公开的实施方式，图2的图像传感器封装件14不包括光学透射盖16和多个微透镜18之间的间隙。在其他实施方式中，图像传感器封装件14可包括除粘合剂22和低折射率层20之外的附加层，粘合剂22和低折射率层20位于光学透射盖16和多个微透镜18之间。
如所示出的，多个微透镜18耦接在CFA 24上方。CFA 24耦接在图像传感器26上方。在各种实施方式中，图像传感器26为5μm厚。在其他实施方式中，图像传感器可大于或小于5μm厚。在各种实施方式中，图像传感器26可以是背面图像传感器(BSI)和/或本文所公开的任何其他类型的图像传感器。如图2所示，图像传感器26耦接至数字信号处理器28并且在其上方。在各种实施方式中，数字信号处理器28为5μm厚。在其他实施方式中，数字信号处理器28可大于或小于5μm厚。在各种实施方式中，图像传感器26被混合接合至数字信号处理器28，并且数字信号处理器可以是专用集成电路(ASIC)。如所示出的，数字信号处理器28可包括在数字信号处理器28中形成的一个或多个穿硅通孔(TSV)30。TSV可包含铜或任何其他类型的导电材料。一个或多个TSV可各自耦接至在氧化物层34中形成的接触焊盘32，其中该氧化物层耦接至数字信号处理器28。在各种实施方式中，接触焊盘32的面向衬底36的表面与氧化物层34的面向衬底36的表面共面。在其他实施方式中，接触焊盘32的表面从氧化物层34的外表面凹入。
图像传感器封装件14可包括衬底36，该衬底具有第一侧38和与第一侧相背的第二侧40。如所示出的，衬底36的周长可大于光学透射盖16的周长。在各种实施方式中，衬底36可包括电源平面44和接地平面46，这可以改善电性能。衬底的第一侧38可通过多个电触点42耦接至数字信号处理器28。作为非限制性示例，多个电触点42可以是凸块、螺柱、销、柱、球、浆料或任何其他类型的电触点。类似地，多个电触点42可包含铜、任何其他金属或其合金、焊料或任何其他导电材料。多个电触点42可耦接至一个或多个TSV 30。在各种实施方式中，电触点42改善图像传感器封装件14的热性能。如图2所示，图像传感器封装件14可包括耦接至衬底的第二侧的多个焊料凸块/焊球48(或其他电连接器)。
在各种实施方式中，图像传感器封装件14包括耦接在衬底36和数字信号处理器28之间的底层填料层50。在各种实施方式中，底层填料层50可完全填充衬底36和氧化物层34之间的空间并且部分地包封多个电触点42。底层填料可用于帮助维持焊球48和焊球48最终所耦接到的电路板之间的连接的可靠性。仍然参见图2，在各种实施方式中，图像传感器封装件14包括模塑料52。模塑料52可直接耦接至衬底36的第一侧38的一部分。模塑料52还可直接耦接至光学透射盖16、图像传感器26、数字信号处理器28和底层填料层50的两个或更多个侧面。在特定实施方式中，光学透射盖16、图像传感器26、数字信号处理器28和底层填料层50的四个侧面被模塑料52覆盖(并且可被直接覆盖)。
在各种实施方式中，模塑料可包含环氧树脂模塑料、丙烯酸类模塑料或任何其他能够硬化并为半导体器件提供物理支撑、光阻挡和/或潮湿防护的模塑料。
虽然图2示出了具有堆叠在数字信号处理器上方的图像传感器的图像传感器的实施方式，但在其他实施方式中，图像传感器和数字信号处理器可不堆叠，而是可并排布置在衬底上方(并且在一些实施方式中可在同一半导体管芯上)。在此类实施方式中，图像传感器可包括将图像传感器电耦接至衬底的多个TSV。TSV可位于图像传感器的周边。在各种实施方式中，数字信号处理器可包括或可不包括TSV。
参见图3至图24，示出了用于形成图像传感器封装件的各种方法。具体参见图3，示出了耦接至数字信号处理器晶圆的图像传感器晶圆的横截面侧视图。形成图像传感器封装件的方法可包括将图像传感器晶圆54接合至数字信号处理器晶圆56并且在其上方。图像传感器晶圆54可以是本文所公开的任何类型的图像传感器，并且在各种实施方式中，可混合接合至数字信号处理器晶圆56。
参见图4，示出了具有减薄的数字信号处理器晶圆并在其中形成的穿硅通孔的图3的晶圆的视图。在各种实施方式中，形成图像传感器封装件的方法可包括将数字信号处理器背面研磨或减薄至预定厚度。在各种实施方式中，预定厚度为5μm，然而，在其他实施方式中，数字信号处理器可被减薄至大于或小于5μm。该方法还可包括在数字信号处理器56中形成一个或多个TSV 58。TSV 58可与本文所公开的任何类型的TSV相同或类似。如图4所示，该方法还可包括将氧化物层60耦接至数字信号处理器56。氧化物层60可包括与TSV 58对准的一个或多个电焊盘62。电焊盘62可包含本文所公开的任何类型的材料。
参见图5，示出了耦接至数字信号处理器晶圆的载体晶圆的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法包括将载体晶圆64耦接至氧化物层60。在各种实施方式中，载体晶圆64可具有与其耦接的氧化物层66，该氧化物层66然后被接合至氧化物层60。参见图6，示出了具有减薄的图像传感器晶圆的图5的视图。在各种实施方式中，形成图像传感器封装件的方法可包括将图像传感器晶圆54减薄至预定厚度。
参见图7，示出了耦接至滤色器阵列(CFA)的图6的图像传感器晶圆的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法可包括在图像传感器晶圆54上方形成CFA 68。该方法还可包括在CFA 68上方形成多个微透镜70。在各种实施方式中，该方法包括在多个微透镜上方施加低折射率层72。低折射率层72可与本文所公开的任何低折射率层相同，包括厚度和材料。由于低折射率层72与传感器叠堆中的其他层相比相对较薄，因此图7至图11和图13的低折射率层72不那么清晰可见。
参见图8，示出了耦接至图7的图像传感器晶圆和载体晶圆的盖的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法包括将光学透射衬底74耦接在图像传感器晶圆54上方。光学透射衬底将最终变成每个图像传感器上方的盖。光学透射衬底可以是本文所公开的任何类型的光学透射材料。在各种实施方式中，光学透射衬底74的厚度可以是400μm厚。在其他实施方式中，盖可厚于400μm或薄于400μm。
在各种实施方式中，形成图像传感器封装件的方法可包括将粘合剂76耦接在光学透射衬底74和低折射率层72之间。粘合剂可以是本文所公开的任何类型的粘合剂，并且可以本文所公开的任何厚度施加。在特定实施方式中，粘合剂76可以是光学透射的。在各种实施方式中，可在将光学透射衬底耦接在图像传感器晶圆54上方之前，将粘合剂76旋涂至光学透射衬底74上。粘合剂76可覆盖光学透射衬底74的整个表面。在各种实施方式中，该方法包括将粘合剂76接合至低折射率层72。在特定实施方式中，粘合剂76可直接接合至低折射率层72。在各种实施方式中，该方法可包括通过紫外(UV)固化或另一种固化工艺来固化粘合剂76。如图8所示，光学透射衬底74和图像传感器晶圆54之间不存在间隙(无间隙传感器)。
参见图9，示出了移除了载体晶圆的图5的盖和图像传感器晶圆的横截面侧视图。如图9所示，形成图像传感器封装件的方法可包括移除载体晶圆64。可通过背面研磨工艺、蚀刻工艺、剥离工艺或任何其他移除工艺来移除载体晶圆。通过移除载体晶圆64，暴露氧化物层66。光学透射衬底74在载体晶圆的移除期间在结构上支撑图像传感器晶圆54和数字信号处理器晶圆56。因此，可认为光学透射衬底74现在充当用于图像传感器设备的载体晶圆。参见图10，示出了具有暴露的电焊盘的图9的图像传感器晶圆的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法包括通过蚀刻穿过氧化物层66的空腔78来暴露电焊盘62。在特定实施方式中，然后使用氧化物蚀刻来暴露电焊盘。在暴露多个电焊盘62的同时，将光学透射衬底74再次用作支撑件。
形成与图9所示的衬底和晶圆类似的衬底和晶圆的另一种实施方式由图22至图25所示。参见图22，示出了耦接至数字信号处理器晶圆的图像传感器晶圆的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法可包括将图像传感器晶圆126接合至数字信号处理器晶圆128。参见图23，示出了具有耦接在图像传感器晶圆上方的滤色器阵列的图22的视图。在各种实施方式中，形成图像传感器封装件的方法可包括在图像传感器晶圆上方形成CFA 130以及在CFA上方形成多个微透镜132。该方法还可包括在多个微透镜132上方形成低折射率层134。低折射率层134可与本文所公开的任何低折射率层相同，包括厚度和材料。由于低折射率层134相对于叠堆中的其他层相对较薄，因此图22至图25的低折射率层134不那么清晰可见。
参见图24，示出了具有耦接在滤色器阵列上方的盖的图22的视图。在各种实施方式中，形成图像传感器封装件的方法包括将光学透射衬底136耦接在图像传感器晶圆126上方，然后该光学透射衬底充当每个图像传感器上方的盖。光学透射衬底136可以是本文所公开的任何类型的光学透射材料。在各种实施方式中，光学透射衬底136的厚度可以是400μm厚。在其他实施方式中，盖可厚于400μm或薄于400μm。
在各种实施方式中，形成图像传感器封装件的方法可包括将粘合剂138耦接在光学透射衬底136和低折射率层134之间。粘合剂可以是本文所公开的任何类型的粘合剂，并且可以本文所公开的任何厚度施加。在特定实施方式中，粘合剂138可以是光学透射的。在各种实施方式中，可在将光学透射衬底耦接在图像传感器晶圆126上方之前，将粘合剂138旋涂至光学透射衬底136上。粘合剂138可覆盖光学透射衬底136的整个表面。在各种实施方式中，该方法包括将粘合剂138接合至低折射率层134。在特定实施方式中，粘合剂138可直接接合至低折射率层134。在各种实施方式中，该方法可包括通过紫外(UV)固化或另一种固化工艺来固化粘合剂138。如图24所示，在光学透射衬底136和图像传感器晶圆126之间不存在间隙，从而形成多个无间隙图像传感器。
在各种实施方式中，参见图26，该方法可包括在施加低折射率层164之后、之前或期间，在图像传感器管芯的边缘/周边周围施加/形成掩模层162。在其他实施方式中，该方法可包括在施加粘合剂层166之后、之前或期间，在图像传感器管芯的边缘/周边周围施加/形成掩模层162。图26示出了在施加低折射率层164之前但在施加粘合剂层166之前/期间施加/形成掩模层162之后的结构。
参见图25，示出了具有减薄的数字信号处理器晶圆并在其中形成的穿硅通孔的图24的视图。在各种实施方式中，形成图像传感器晶圆的方法包括将数字信号处理器晶圆128减薄至预定厚度。在各种实施方式中，数字信号处理器晶圆128可通过背面研磨晶圆来减薄。光学透射衬底136在数字信号处理器晶圆128的减薄期间充当类似于载体晶圆的机械支撑件，使得在减薄工艺期间不需要附加的载体晶圆。在使数字信号处理器晶圆减薄时，可在数字信号处理器中形成多个TSV 139，并且具有在其中形成的电焊盘142的氧化物层140可耦接至数字信号处理器晶圆。由图22至图25所描绘的该方法不同于本文所公开的其他方法，因为该方法不利用除了光学透射衬底136之外的载体晶圆。
参见图11，示出了具有耦接至电焊盘的多个电触点的图10的图像传感器晶圆的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法包括将多个电触点80耦接至多个电焊盘62。在将电触点80施加至电焊盘62期间，光学透射衬底74充当载体晶圆。作为非限制性示例，电触点80可包括凸块、螺柱、柱、立柱、球或任何其他类型的电触点。此外，电触点80可包含铜、任何其他金属或其合金、焊料、导电浆料或任何其他导电材料。参见图12，示出了电触点的实施方式的侧视图。在各种实施方式中，电触点可包括耦接至凸块84的柱/螺柱82。在特定实施方式中，柱可包括镀覆的铜，并且凸块84可包括焊料帽。钛/铜层86可将铜柱与电焊盘62分开。在各种实施方式中，镀覆的镍层88可将柱82与凸块84分开。
参见图13，示出了耦接至衬底的图像传感器的横截面侧视图。在各种实施方式中，形成图像传感器封装件的方法可包括：将光学透射衬底74切割成多个光学透射盖90；将图像传感器晶圆切割成多个图像传感器管芯92；以及将数字信号处理器晶圆56切割成多个数字信号处理器管芯94。该方法可包括将每个数字信号处理器管芯94耦接至衬底96，该数字信号处理器管芯具有图像传感器管芯92和耦接至该图像传感器管芯的光学透射盖90。数字信号处理器管芯可通过多个电触点80耦接至衬底96。可使用图14至图20所示的任何方法将衬底96接合至电触点。参见图14至图17，示出了将电触点接合至衬底的第一方法。具体参见图14，示出了施加至衬底的焊剂层的侧视图。在各种实施方式中，该方法可包括将焊剂层98施加至衬底100。参见图15，示出了具有安装在衬底上的球栅阵列的芯片的侧视图。该方法可包括在衬底100上方安装具有多个电触点104的芯片或管芯102。参见图16，该方法可包括使电触点104回流以将管芯102接合至衬底100。在各种实施方式中，可在260摄氏度下进行回流。在其他实施方式中，可在更高或更低的温度下进行回流。参见图17，该方法可包括通过去焊和干燥工艺移除焊剂层98。参见图18至图20，示出了将电触点接合至衬底的第二方法。参见图18，示出了施加至衬底的浆料的侧视图。在各种实施方式中，该方法可包括将模版耦接在衬底上方以及将导电浆料110施加至衬底108。在各种实施方式中，可以约80微米的厚度将浆料110印刷至衬底108上。如图18所示，该方法可包括移除任何过量的浆料112。参见图19，示出了移除模版并将芯片定位在衬底上方的图18的视图。在各种实施方式中，该方法可包括移除模版106以及将管芯114安装在衬底108上方。参见图20，示出了在使浆料回流之后接合至衬底的图18的芯片的视图。在将管芯114定位在衬底108上方时，可使导电浆料110回流并且可将管芯114接合至衬底108。在此类实施方式中，可使导电浆料在150摄氏度的温度下回流大约五分钟。在其他实施方式中，回流温度可大于或小于150摄氏度，并且可使浆料回流超过或小于五分钟。虽然图11至图13所描绘的方法示出了管芯通过多个柱和凸块接合至衬底，但应当理解，在其他实施方式中，本文所公开的方法可包括通过焊盘对焊盘(pad-to-pad)结构中的焊料浆料而不是使用球/柱将管芯接合至衬底。因此，图14至图20所描述的任一种方法均可在本文所公开的方法中用于将管芯接合至衬底。
参见图21，示出了图像传感器封装件的横截面侧视图。如所示出的，通过本文所公开的方法形成的图像传感器封装件116可与图2的图像传感器封装件14相同。在各种实施方式中，形成图像传感器封装件116的方法包括在氧化物层66和衬底96之间施加底层填料层118。因此，底层填料化合物可在多个电触点80中的每一个电触点之间。该方法可包括使用毛细管底层填充工艺、液体包封工艺或任何其他包封/底层填充工艺。在各种实施方式中，该方法还可包括将模塑料120施加至衬底96的第一侧122的一部分。模塑料120还可直接耦接至光学透射盖90、图像传感器管芯92、数字信号处理器管芯94和底层填料层118的两个或更多个侧面。在特定实施方式中，光学透射盖90、图像传感器管芯92、数字信号处理器管芯94和底层填料层118的四个侧面被模塑料120覆盖(并且可被直接覆盖)。在各种实施方式中，模塑料可包含环氧树脂模塑料、丙烯酸类模塑料或任何其他能够硬化并为半导体器件提供物理支撑和/或潮湿防护的模塑料。
在各种实施方式中，形成图像传感器封装件的方法包括使多个电触点124形成至衬底的与衬底96的第一侧122相背的第二侧。电触点可以是本文所公开的任何类型的电触点。形成图像传感器封装件的方法还包括将模塑料120和衬底96切割成多个图像传感器封装件116。本文所公开的各种方法不包括管芯级禁用区域。
虽然本文所公开的形成图像传感器封装件的方法的实施方式主要是指形成具有堆叠在数字信号处理器上方的图像传感器的图像传感器封装件的方法，但在其他实施方式中，形成图像传感器封装件的方法可包括形成不具有堆叠在数字信号处理器上方的图像传感器的封装件。在此类实施方式中，图像传感器可与数字信号处理器并排布置在衬底上方(或一起包括在同一管芯中)。在此类实施方式中，形成图像传感器封装件的方法可包括将光学透射衬底耦接在包括图像传感器和数字信号处理器两者的晶圆上方并且耦接至该晶圆。在各种实施方式中，该方法可包括在包括图像传感器和数字信号处理器的晶圆中形成多个TSV。在各种实施方式中，该方法还可包括将包括图像传感器和数字信号处理器的晶圆切割成包括图像传感器和数字信号处理器的管芯。在此类实施方式中，每个管芯然后可单独地或同时地耦接在衬底上方。在各种实施方式中，底层填料层和/或模塑料可类似于本文所公开的任何方法耦接在衬底上方，并且衬底和/或模塑料可被分割成图像传感器封装件。
本文所公开的形成图像传感器封装件的方法的各种实施方式包括形成图像传感器封装件的方法，其中在封装件的光学透射盖和图像传感器管芯之间不存在间隙。在形成本文所公开的倒装芯片的方法中，倒装芯片在焊料回流且然后凝固时是自对准的。这是因为凸块的使用有助于图像传感器在回流工艺期间保持在期望位置。类似地，当形成倒装芯片时，X和Y方向中的每一个上的管芯位置可被影响小于10μm。类似地，管芯倾斜可被影响小于0.1度，并且管芯旋转被影响小于0.2度。在本文档中使用无间隙图像传感器实施方式允许使用柱/球电连接器，这允许与以物理上较小的封装大小进行的引线接合图像传感器管芯加工比较时更精确的管芯放置并且避免了管芯倾斜。
图像传感器封装件的实施方式(如本文所公开的那些)可包括低折射率层包含丙烯酸类树脂、聚合物树脂、一种无机填料、多种无机填料、气凝胶材料或它们的任何组合的情况。
图像传感器封装件的实施方式(如本文所公开的那些)包括粘合剂直接耦接至光学透射盖的整个表面的情况。
图像传感器封装件的实施方式(如本文所公开的那些)可包括模塑料，该模塑料直接耦接至衬底的第一侧并且耦接至光学透射盖、图像传感器、数字信号处理器和底层填料层的两个或更多个侧面。
图像传感器封装件的实施方式(如本文所公开的那些)可包括图像传感器堆叠在数字信号处理器上方并且数字信号处理器在其中包括多个TSV的情况。
图像传感器封装件的实施方式(如本文所公开的那些)可包括光学透射盖的周长小于衬底的周长的情况。
形成图像传感器封装件的方法的实施方式可包括在数字信号处理器中形成多个TSV。
形成图像传感器封装件的方法的实施方式可包括在多个电触点中的每个电触点之间施加底层填料化合物。
在以上描述中提到图像传感器封装件的特定实施方式以及实施部件、子部件、方法和子方法的地方，应当显而易见的是，可在不脱离本发明的实质的情况下作出多种修改，并且可将这些实施方式、实施部件、子部件、方法和子方法应用于其他图像传感器封装件。

Claims (10)

1.一种图像传感器封装件，包括：
多个微透镜，所述多个微透镜耦接在滤色器阵列(CFA)上方；
低折射率层，所述低折射率层直接耦接至所述多个微透镜并且在其上方；
粘合剂，所述粘合剂直接耦接至所述低折射率层并且在其上方；和
光学透射盖，所述光学透射盖直接耦接至所述粘合剂并且在其上方；
其中在所述光学透射盖和所述多个微透镜之间不存在间隙。
2.根据权利要求1所述的封装件，其中所述低折射率层包括1.2的折射率或小于5微米的厚度中的一者。
3.根据权利要求1所述的封装件，还包括掩模层，所述掩模层耦接在所述低折射率层的周边上方或下方中的一者。
4.一种图像传感器封装件，包括：
衬底的第一侧，所述第一侧通过多个电触点耦接至数字信号处理器；
图像传感器，所述图像传感器耦接至所述第一衬底的所述第一侧；
底层填料层，所述底层填料层耦接在所述衬底上方；
多个微透镜，所述多个微透镜耦接在所述图像传感器上方；和
光学透射盖，所述光学透射盖耦接在所述多个微透镜上方；
其中在所述光学透射盖和所述多个微透镜之间不存在间隙。
5.根据权利要求4所述的图像传感器，还包括粘合剂和低折射率层，所述粘合剂和所述低折射率层耦接在所述光学透射盖和所述多个微透镜之间，所述低折射率层包括1.2的折射率。
6.一种形成图像传感器封装件的方法，所述方法包括：
将图像传感器晶圆接合至数字信号处理器晶圆；
将所述数字信号处理器晶圆背面研磨至预定厚度；
将光学透射衬底耦接在所述图像传感器晶圆上方，其中在所述光学透射衬底和所述图像传感器晶圆之间不存在间隙；
使用所述光学透射衬底作为支撑件，通过氧化物层暴露多个电焊盘；以及
将多个电触点耦接至所述多个电焊盘；以及
将所述光学透射衬底、所述图像传感器晶圆和所述数字信号处理器晶圆切割成多个光学透射盖、图像传感器管芯和数字信号处理器管芯。
7.根据权利要求6所述的方法，还包括将模塑料耦接至每个图像传感器管芯、每个数字信号处理器管芯和每个光学透射盖的两个或更多个侧壁。
8.根据权利要求6所述的方法，还包括沿着所述光学透射衬底的整个表面施加光学透射粘合剂。
9.根据权利要求6所述的方法，还包括在所述图像传感器晶圆上方施加低折射率层。
10.根据权利要求9所述的方法，其中所述低折射率层包括1.2的折射率。
CN202010522178.8A 2019-06-27 2020-06-10 图像传感器封装件和相关方法 Pending CN112151560A (zh)

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