CN112144105A - Combined exhaust pipe and single crystal furnace - Google Patents
Combined exhaust pipe and single crystal furnace Download PDFInfo
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- CN112144105A CN112144105A CN202011015334.8A CN202011015334A CN112144105A CN 112144105 A CN112144105 A CN 112144105A CN 202011015334 A CN202011015334 A CN 202011015334A CN 112144105 A CN112144105 A CN 112144105A
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- exhaust pipe
- single crystal
- crystal furnace
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a combined exhaust pipe and a single crystal furnace, wherein the combined exhaust pipe is arranged at the bottom of the single crystal furnace and comprises: the single crystal furnace comprises an inner cylinder, an outer cylinder and a heat insulation material layer clamped between the inner cylinder and the outer cylinder, wherein an exhaust channel is formed inside the inner cylinder, one end of a combined exhaust pipe is communicated with an inner cavity of the single crystal furnace, and the other end of the combined exhaust pipe penetrates through the bottom of the single crystal furnace. According to the combined exhaust pipe disclosed by the embodiment of the invention, the split structure is designed, the heat in the single crystal furnace can be prevented from being dissipated outwards through the exhaust pipe by filling the heat insulating material in the middle, the cold deposition of tail gas in the exhaust pipe is reduced on the premise of ensuring the constant temperature at the bottom of the single crystal furnace, the tail gas backflow caused by unsmooth exhaust is avoided, and the stable growth of crystals is ensured.
Description
Technical Field
The invention relates to the technical field of crystal bar preparation, in particular to a combined exhaust pipe and a single crystal furnace.
Background
With the continuous improvement of the quality requirement of semiconductor silicon wafers, the crystal defects of crystal bars in the crystal pulling process have higher control requirements. The factors influencing the crystal defects mainly comprise two factors, one is crystal pulling process parameters, and crystal rods with better quality can be prepared by using the optimized process parameters to pull the crystal; the structure and the performance of the thermal field are prerequisites for the quality of the crystal bar, the thermal field is a vital component in the crystal pulling furnace, and the crystal pulling environment of the crystal pulling furnace is strict, so that the thermal field has extremely high requirements for the quality and the material, and has high temperature resistance, good thermal stability and high purity. Generally, a thermal field mainly comprises a graphite component and a thermal felt, the graphite component with high strength and excellent thermal stability is a core component of the thermal field, the graphite component is generally integrally formed by high-purity graphite, a silicon carbide coating is also plated on the surface of the graphite component, the thermal felt mainly plays a role in heat insulation and directional heat conduction, the thermal felt is generally subjected to a plurality of high-purification treatment procedures, and the thermal field is quite expensive due to the complexity of the manufacturing process and the strict requirement on the material.
Inert gas is required to be filled into the crystal pulling furnace in the crystal pulling process, firstly, the pressure in the furnace is kept constant, and a stable growth space is provided for crystals; and secondly, a large amount of SiO gas and impurities generated in the crystal growth process are taken away, and the phenomenon that the substances are deposited on the surface of the thermal field component in a large amount to influence the normal use of the thermal field component is avoided. The exhaust system of the crystal pulling furnace ensures the normal discharge of tail gas and impurities, wherein one important thermal field component is an exhaust pipe which is usually made of high-purity graphite, when the tail gas passes through the exhaust pipe, a reaction deposition phenomenon occurs, and as the crystal pulling times increase, the deposit gradually becomes larger and becomes a blocky blockage; on the other hand, if the exhaust is not smooth, the tail gas flows backwards easily, the tail gas can float on the surface of the silicon solution in the form of floaters, the floaters are gathered with each other, large impurities are formed and enter the solution, the crystal bar is broken, and the yield of the whole crystal bar is influenced.
Disclosure of Invention
In view of the above, the invention provides a combined exhaust pipe and a single crystal furnace, which can solve the problems that the exhaust pipe in the prior art is low in temperature, and the exhaust pipe is blocked due to the fact that the exhaust gas meets cold deposition, so that the normal exhaust of the exhaust gas and the air pressure in the single crystal furnace are influenced, and finally the crystal growth is poor.
In order to solve the technical problems, the invention adopts the following technical scheme:
an embodiment of the invention provides a combined exhaust pipe, which is arranged at the bottom of a single crystal furnace and comprises: the single crystal furnace comprises an inner cylinder, an outer cylinder and a heat insulation material layer clamped between the inner cylinder and the outer cylinder, wherein an exhaust channel is formed inside the inner cylinder, one end of a combined exhaust pipe is communicated with an inner cavity of the single crystal furnace, and the other end of the combined exhaust pipe penetrates through the bottom of the single crystal furnace.
Optionally, the inner cylinder includes an inner upper cylinder and an inner lower cylinder, the inner upper cylinder and the inner lower cylinder are detachably connected, and the inner lower cylinder and the outer cylinder are detachably connected.
Optionally, the lower surface of the inner upper cylinder is provided with a convex ring, the upper surface of the inner lower cylinder is provided with a groove, and the inner upper cylinder and the inner lower cylinder are connected in a concave-convex matching manner through the convex ring and the groove.
Optionally, the inner bottom of the outer cylinder is provided with a first thread, the outer bottom of the inner lower cylinder is provided with a second thread, and the outer cylinder and the inner cylinder are in thread fit connection through the first thread and the second thread.
Optionally, the heat insulation material layer is a heat insulation felt.
Optionally, the outer cylinder is made of graphite.
Optionally, the inner upper cylinder and the inner lower cylinder are made of any one of molybdenum, tungsten and tungsten carbide.
In another aspect, the embodiment of the invention further provides a single crystal furnace, which comprises the combined exhaust pipe.
The technical scheme of the invention has the following beneficial effects:
according to the combined exhaust pipe disclosed by the embodiment of the invention, the split structure is designed, the heat in the single crystal furnace can be prevented from being dissipated outwards through the exhaust pipe by filling the heat insulating material in the middle, the cold deposition of tail gas in the exhaust pipe is reduced on the premise of ensuring the constant temperature at the bottom of the single crystal furnace, the tail gas backflow caused by unsmooth exhaust is avoided, and the stable growth of crystals is ensured.
Drawings
FIG. 1 is a sectional view of a combined exhaust pipe according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an outer barrel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a thermal insulation material layer according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an inner lower cylinder according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an inner upper cylinder according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
Referring to fig. 1, a sectional view of a combined exhaust pipe according to an embodiment of the present invention is shown. As shown in fig. 1, an embodiment of the present invention provides a combined exhaust pipe, which may specifically include: the single crystal furnace comprises an inner cylinder 1, an outer cylinder 2 and a heat insulating material layer 3 arranged between the inner cylinder 1 and the outer cylinder 2, wherein the inner cylinder 1 is internally provided with a hollow structure to form an exhaust channel, the combined exhaust pipe is arranged at the bottom of the single crystal furnace, namely one end of the combined exhaust pipe is communicated with the inner cavity of the single crystal furnace, the other end of the combined exhaust pipe penetrates through the bottom of the single crystal furnace and extends out of the single crystal furnace, and therefore tail gas in the single crystal furnace is exhausted out of the furnace through the combined exhaust pipe. In the embodiment of the invention, the combined exhaust pipe is in a split type design, and the heat inside the single crystal furnace can be reduced to the greatest extent to be lost outside the furnace through the combined exhaust pipe by clamping the heat insulation material layer 3, so that the heat insulation effect is achieved, and the temperature at the bottom of the single crystal furnace is ensured to be constant; moreover, due to the heat insulation effect of the heat insulation material layer 3, when high-temperature tail gas flows through the combined exhaust pipe from the single crystal furnace, physical deposition caused by cooling can be effectively reduced, so that the number of blocky deposits formed in the combined exhaust pipe is reduced, the blockage of the combined exhaust pipe is avoided, and the counter flow of the tail gas is avoided.
In the embodiment of the invention, the inner cylinder 1 can comprise an inner lower cylinder 11 and an inner upper cylinder 12, wherein the inner lower cylinder 11 and the inner upper cylinder 12 are detachably connected, the inner lower cylinder and the outer cylinder are also detachably connected, the inner lower cylinder 11 can be independently detached from the combined exhaust pipe to be separated from the inner upper cylinder 12 and the outer cylinder 2, and therefore, as the combined exhaust pipe clamps the heat insulation material layer 3, tail gas is mainly deposited at one end of the combined exhaust pipe extending out of the single crystal furnace, namely, deposits are mainly deposited on the inner surface of the inner lower cylinder 11, the inner lower cylinder 11 is easily detached from the combined exhaust pipe through the detachable design, and then the deposits on the inner lower cylinder 11 are cleaned, so that the cleaning difficulty is reduced, and the cleaning efficiency is improved.
Referring to fig. 2 and fig. 3, fig. 2 is a schematic structural view of an outer cylinder according to an embodiment of the present invention, and fig. 3 is a schematic structural view of an insulating material layer according to an embodiment of the present invention. As shown in fig. 2 and 3, in the embodiment of the present invention, optionally, the outer cylinder 2 is hollow cylindrical, the thermal insulation material layer 3 is also hollow cylindrical, and a flange is formed on the top of the outer cylinder 2, so that the combined exhaust pipe can be conveniently lapped with the internal structure of the single crystal furnace through the flange.
Referring to fig. 4 and 5, fig. 4 is a schematic structural diagram of an inner lower cylinder according to an embodiment of the present invention, and fig. 5 is a schematic structural diagram of an inner upper cylinder according to an embodiment of the present invention. As shown in fig. 4 and 5, a ring of convex rings is formed on the lower surface of the inner upper cylinder 12, a ring of concave grooves is correspondingly formed on the upper surface of the inner lower cylinder 11, and the inner upper cylinder 12 and the inner lower cylinder 11 are in concave-convex fit connection through the convex rings and the concave grooves.
In the embodiment of the invention, optionally, the inner bottom of the outer cylinder 2 is provided with a first thread, the outer bottom of the inner lower cylinder 11 is provided with a second thread, the outer cylinder 2 and the lower inner cylinder 11 are in thread fit connection through the first thread and the second thread, the inner lower cylinder 11 and the outer cylinder 2 can be conveniently detached through the thread fit mode, meanwhile, the tight connection can be realized, and the looseness caused by the blowing of tail gas is avoided.
In the embodiment of the invention, the heat insulating material layer 3 is formed by the heat insulating felt which has good heat insulating and preserving effects, and the outer cylinder 2 is made of graphite, so that the heat in the single crystal furnace can be effectively prevented from being dissipated outwards through the combined exhaust pipe, and the good heat insulating effect is achieved; the inner upper cylinder 12 and the inner lower cylinder 11 can be made of materials with high strength, high hardness, wear resistance and corrosion resistance, and optionally can be made of materials such as molybdenum, tungsten carbide and the like, compared with the graphite exhaust pipe in the prior art, the inner cylinder made of the materials cannot perform chemical reaction with tail gas, so that the tail gas only undergoes cold physical deposition to form blocky deposits, the deposits formed by the cold physical deposition are reduced to a certain extent due to the heat preservation and insulation effect of the heat insulation material layer, and the integrity of the deposits cannot be damaged due to the wear resistance and the disassembly of the inner lower cylinder 11 while the deposits are convenient to clean.
In a word, the combined exhaust pipe provided by the embodiment of the invention is designed into a split structure, and the heat insulating material is filled in the middle, so that the heat in the single crystal furnace can be prevented from being dissipated outwards through the exhaust pipe, the cold deposition of tail gas in the exhaust pipe is reduced on the premise of ensuring the constant temperature at the bottom of the single crystal furnace, the tail gas backflow caused by unsmooth exhaust is avoided, and the stable growth of crystals is ensured.
Fig. 6 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present invention. As shown in fig. 6, an embodiment of the present invention further provides a single crystal furnace, where the single crystal furnace may include a furnace body 60, a thermal felt 61 is disposed at the bottom of the furnace body 60, and a combined exhaust pipe 62, and a specific structure of the combined exhaust pipe 62 is as described in the above embodiments, and is not described herein again. One end of the combined exhaust pipe is communicated with the inner cavity of the single crystal furnace, and the other end of the combined exhaust pipe penetrates through the bottom of the single crystal furnace and extends out of the single crystal furnace, so that tail gas in the single crystal furnace is exhausted out of the single crystal furnace through the combined exhaust pipe.
According to the single crystal furnace provided by the embodiment of the invention, heat in the single crystal furnace can be prevented from being dissipated outwards through the exhaust pipe, the cold deposition of tail gas in the exhaust pipe is reduced on the premise of ensuring the constant temperature at the bottom of the single crystal furnace, the tail gas backflow caused by unsmooth exhaust is avoided, and the stable growth of crystals is ensured.
While the foregoing is directed to embodiments of the present invention, it will be appreciated by those skilled in the art that various changes and modifications may be made without departing from the principles of the invention, and it is intended that all such changes and modifications be considered as within the scope of the invention.
Claims (8)
1. The utility model provides a combination blast pipe, sets up in single crystal growing furnace bottom, its characterized in that includes: the single crystal furnace comprises an inner cylinder, an outer cylinder and a heat insulation material layer clamped between the inner cylinder and the outer cylinder, wherein an exhaust channel is formed inside the inner cylinder, one end of a combined exhaust pipe is communicated with an inner cavity of the single crystal furnace, and the other end of the combined exhaust pipe penetrates through the bottom of the single crystal furnace.
2. The combination exhaust pipe of claim 1, wherein the inner cylinder comprises an inner upper cylinder and an inner lower cylinder, the inner upper cylinder and the inner lower cylinder are detachably connected, and the inner lower cylinder and the outer cylinder are detachably connected.
3. The combination exhaust pipe of claim 2, wherein the lower surface of the inner upper cylinder is provided with a convex ring, the upper surface of the inner lower cylinder is provided with a groove, and the inner upper cylinder and the inner lower cylinder are connected in a concave-convex fit manner through the convex ring and the groove.
4. The combination exhaust pipe according to claim 2, wherein the inner bottom of the outer cylinder is formed with a first screw thread, the outer bottom of the inner lower cylinder is formed with a second screw thread, and the outer cylinder and the inner cylinder are screw-coupled by the first screw thread and the second screw thread.
5. The combined exhaust duct of claim 1, wherein the layer of thermal insulating material is a thermal insulating felt.
6. The combination exhaust pipe of claim 1 wherein the outer cylinder is made of graphite.
7. The combined exhaust pipe according to claim 2, wherein the inner upper cylinder and the inner lower cylinder are made of any one of molybdenum, tungsten, and tungsten carbide.
8. A single crystal growing furnace comprising a combined exhaust pipe according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011015334.8A CN112144105A (en) | 2020-09-24 | 2020-09-24 | Combined exhaust pipe and single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011015334.8A CN112144105A (en) | 2020-09-24 | 2020-09-24 | Combined exhaust pipe and single crystal furnace |
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| Publication Number | Publication Date |
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| CN112144105A true CN112144105A (en) | 2020-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011015334.8A Pending CN112144105A (en) | 2020-09-24 | 2020-09-24 | Combined exhaust pipe and single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023165473A1 (en) * | 2022-03-01 | 2023-09-07 | Tcl中环新能源科技股份有限公司 | Single-crystal furnace air guide apparatus with reduced power consumption, and single-crystal furnace |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002316896A (en) * | 2001-04-13 | 2002-10-31 | Shin Etsu Handotai Co Ltd | Manufacturing apparatus and manufacturing method for silicon single crystal |
| US20080110394A1 (en) * | 2004-12-13 | 2008-05-15 | Sumco Techxiv Kabushiki Kaisha | Semiconductor Single Crystal Production Device And Producing Method Therefor |
| KR20150071850A (en) * | 2013-12-19 | 2015-06-29 | 주식회사 엘지실트론 | Gas discharge pipe and ingot growing apparatus having the same |
| CN211522363U (en) * | 2019-05-27 | 2020-09-18 | 宁夏隆基硅材料有限公司 | Single crystal furnace exhaust duct and single crystal furnace |
-
2020
- 2020-09-24 CN CN202011015334.8A patent/CN112144105A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002316896A (en) * | 2001-04-13 | 2002-10-31 | Shin Etsu Handotai Co Ltd | Manufacturing apparatus and manufacturing method for silicon single crystal |
| US20080110394A1 (en) * | 2004-12-13 | 2008-05-15 | Sumco Techxiv Kabushiki Kaisha | Semiconductor Single Crystal Production Device And Producing Method Therefor |
| KR20150071850A (en) * | 2013-12-19 | 2015-06-29 | 주식회사 엘지실트론 | Gas discharge pipe and ingot growing apparatus having the same |
| CN211522363U (en) * | 2019-05-27 | 2020-09-18 | 宁夏隆基硅材料有限公司 | Single crystal furnace exhaust duct and single crystal furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023165473A1 (en) * | 2022-03-01 | 2023-09-07 | Tcl中环新能源科技股份有限公司 | Single-crystal furnace air guide apparatus with reduced power consumption, and single-crystal furnace |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20211025 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Application publication date: 20201229 |
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