CN112117981A - Quartz crystal resonator and preparation method thereof - Google Patents
Quartz crystal resonator and preparation method thereof Download PDFInfo
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- CN112117981A CN112117981A CN202011007661.9A CN202011007661A CN112117981A CN 112117981 A CN112117981 A CN 112117981A CN 202011007661 A CN202011007661 A CN 202011007661A CN 112117981 A CN112117981 A CN 112117981A
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- 239000010453 quartz Substances 0.000 title claims abstract description 149
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 239000013078 crystal Substances 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 56
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 34
- 244000273256 Phragmites communis Species 0.000 claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000007767 bonding agent Substances 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 32
- 229910052737 gold Inorganic materials 0.000 claims description 31
- 239000010931 gold Substances 0.000 claims description 31
- 238000000137 annealing Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- 238000001953 recrystallisation Methods 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000032683 aging Effects 0.000 abstract description 16
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000012797 qualification Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 12
- 229920000620 organic polymer Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention is suitable for the technical field of crystal elements, and provides a quartz crystal resonator and a preparation method thereof, wherein the quartz crystal resonator comprises: the base is provided with a plurality of reeds, the quartz wafers are arranged among the reeds and are bonded with the reeds through the bonding agent, and the bonding agent is nano silver adhesive. According to the invention, the quartz crystal wafer and the plurality of reeds are bonded by adopting the nano-silver adhesive, so that the aging rate of the quartz crystal resonator can be reduced, the production qualification rate of the quartz crystal resonator is improved, pre-aging for one month is not required, and the production period can be greatly shortened.
Description
Technical Field
The invention belongs to the technical field of crystal elements, and particularly relates to a quartz crystal resonator and a preparation method thereof.
Background
The requirement on the aging rate of the constant-temperature crystal oscillator is more and more strict in high-end application occasions such as communication base stations, power systems and the like. The quartz crystal resonator determines the aging rate index of the constant-temperature crystal oscillator. In the prior art, in the production of quartz crystal resonators, a conductive organic polymer is generally used as a bonding agent between a wafer and a support. The conductive organic polymer is a high molecular network formed by cross-linking reaction of organic micromolecules, and conductive particles are embedded into the high molecular network to form a conductive path. The main thermodynamic property of the conductive organic polymer is determined by the organic polymer, however, the creep and viscosity of the organic polymer can cause the quartz crystal resonator to be affected by the stress continuously released by the conductive organic polymer in the working process, thereby further causing the aging of the crystal oscillator to be poor. The slow decomposition of the uncured components in the conductive organic polymer at high temperature is another key factor affecting the aging of the constant temperature crystal oscillator. At present, in order to reduce the aging rate of the quartz crystal resonator, long-time pre-aging treatment is required in the production process of the quartz crystal resonator so as to fully release the stress in the conductive organic polymer, and the production period is longer.
Disclosure of Invention
In view of this, the embodiment of the invention provides a quartz crystal resonator and a preparation method thereof, and aims to solve the problems of poor aging characteristic and long production period of the quartz crystal resonator in the prior art.
To achieve the above object, a first aspect of embodiments of the present invention provides a quartz crystal resonator, comprising:
the reed bonding device comprises a base, reeds, a quartz wafer and a bonding agent, wherein the base is provided with the reeds, the quartz wafer is arranged among the reeds, and the quartz wafer is bonded with the reeds through the bonding agent.
As another embodiment of the present application, the content of pure silver in the silver nanoparticles contained in the silver nanoparticle paste is greater than or equal to 99%.
As another embodiment of the present application, the method further includes: an electrode;
electrodes are respectively arranged in a central area and an edge preset area of the front surface of the quartz wafer, wherein the electrode arranged in the central area is communicated with the electrode arranged in any one of the edge preset areas;
the preset edge area is an area corresponding to the bonding position of the reed and the quartz wafer.
As another embodiment of the present application, the edge preset region is a sector region, and the nano silver paste covers the sector region.
As another embodiment of the present application, an adhesion metal layer is disposed between the quartz wafer and the electrode.
As another embodiment of the present application, the metal used in the adhesion metal layer is chromium, and the thickness of the adhesion metal layer ranges from 1 nm to 3 nm;
the metal adopted by the electrode is gold, and the thickness of the electrode is more than 100 nanometers.
A second aspect of an embodiment of the present invention provides a method for manufacturing a quartz crystal resonator, including:
arranging a first preset coating clamp on the front side of a quartz wafer, arranging a second preset coating clamp on the back side of the quartz wafer, and then evaporating an electrode layer;
removing the first preset coating clamp and the second preset coating clamp to obtain a quartz wafer sample;
coating nano silver adhesive on a plurality of reeds arranged on the base respectively;
placing the quartz crystal wafer sample in the plurality of reeds and fastening, and coating the nano silver adhesive between the quartz crystal wafer and each reed again to obtain a first quartz crystal resonator sample;
and sintering and recrystallizing the first quartz crystal resonator sample, and packaging the recrystallized second quartz crystal resonator sample to obtain the quartz crystal resonator.
As another embodiment of the present application, after the first preset plating jig is placed on the front side of a quartz wafer, and the second preset plating jig is placed on the back side of the quartz wafer, before the evaporation of the electrode layer, the method further includes:
respectively evaporating and coating metal layers on the front surface and the back surface of the quartz wafer;
arranging a first preset coating clamp on the front surface of a quartz wafer, arranging a second preset coating clamp on the back surface of the quartz wafer, and evaporating an electrode layer, wherein the method comprises the following steps:
and arranging the first preset coating clamp on the front surface of the quartz wafer adhered with the metal layer, arranging the second preset coating clamp on the back surface of the quartz wafer adhered with the metal layer, and evaporating the electrode layer.
As another embodiment of the present application, the first preset plating jig is a jig film having a shape and a size identical to those of the quartz wafer, and the jig film is formed by providing a hollow area in a center area and an edge preset area of the jig film, the center area being communicated with any one of the edge preset areas;
the edge preset area is an area corresponding to the bonding position of the reed and the quartz wafer, and the edge preset area is a fan-shaped area.
As another embodiment of the present application, the sintering and recrystallizing the first quartz-crystal resonator sample, and packaging the second quartz-crystal resonator sample after recrystallization to obtain the quartz-crystal resonator includes:
filling nitrogen into an annealing furnace, placing the first quartz crystal resonator sample in the annealing furnace, heating to enable the temperature in the annealing furnace to reach a first preset temperature within a first preset time, and keeping the first preset temperature for a second preset time;
when the second preset time is up, the annealing furnace is pumped to a high vacuum state, and the annealing furnace is heated, so that the temperature in the annealing furnace reaches a second preset temperature within a third preset time;
when the temperature in the annealing furnace reaches a second preset temperature, keeping the second preset temperature for a fourth preset time;
when the fourth preset time is up, cooling the annealing furnace to enable the temperature in the annealing furnace to reach room temperature within the fifth preset time, and obtaining a second quartz crystal resonator sample;
and carrying out vacuum cold pressure welding packaging on the second quartz crystal resonator sample to obtain the quartz crystal resonator.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: compared with the prior art, the aging rate of the quartz crystal resonator is reduced by adopting the nano-silver adhesive to replace a conductive organic polymer taking a macromolecule as a matrix, pre-aging for one month is not needed, and the production period is greatly shortened. The metal chromium is arranged on the quartz wafer, so that the adhesion strength between the gold electrode and the quartz wafer is improved. The bonding strength between the gold electrode and the nano silver paste is improved by enlarging the gold plating area at the edge of the quartz wafer and increasing the gold plating thickness.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a quartz crystal resonator provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for fabricating a quartz crystal resonator according to an embodiment of the present invention;
fig. 3(1) is a schematic view of a first predetermined coating fixture according to an embodiment of the present invention;
fig. 3(2) is a schematic view of a second predetermined coating fixture according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a quartz-crystal resonator obtained by sintering and recrystallizing a first quartz-crystal resonator sample and packaging a second quartz-crystal resonator sample after recrystallization according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a temperature curve of sintering and recrystallization of nano-silver colloid according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a quartz crystal resonator provided in an embodiment of the present invention, which is described in detail below.
The quartz crystal resonator includes: the spring plate comprises a base 1, spring plates 2, a quartz wafer 3 and a binder 4, wherein the base 1 is provided with the spring plates 2, the quartz wafer 3 is arranged among the spring plates 2, and the quartz wafer 3 is bonded with the spring plates 2 through the binder 4, and the binder 4 is nano silver adhesive.
Optionally, in the sintering process of the nano silver particles in the nano silver adhesive, the nano silver particles are gradually polymerized under the drive of high temperature to form continuous silver, the content of pure silver in the nano silver particles is greater than or equal to 99%, the mechanical property of the nano silver particles is closer to that of silver in a metal state, the nano silver particles can resist the temperature of more than 500 ℃, the stress relaxation phenomenon caused by creep deformation and viscosity of the nano silver particles is greatly reduced, and the aging characteristic of the quartz crystal resonator can be effectively improved.
As shown in fig. 1, the quartz crystal resonator further includes: and an electrode 5.
the preset edge area is an area corresponding to the bonding position of the reed and the quartz wafer.
As shown in fig. 1, the quartz crystal resonator includes 4 reeds, the electrode in the central area is circular, the electrode in the edge preset area is sector-shaped, and the electrode in the edge preset area is sector-shaped, wherein one sector-shaped electrode is communicated with the central electrode. And the nano silver adhesive covers the fan-shaped area. The fan-shaped electrode can enlarge the gold plating area at the edge of the quartz wafer and increase the contact area between the nano-silver colloid and the quartz wafer, thereby improving the bonding strength between the gold electrode and the nano-silver colloid.
The back surface of the quartz wafer 3 also needs to be provided with an electrode, and the shape of the electrode is different from that of the front surface electrode in that the edge fan-shaped electrode is not provided.
It should be noted that the sector area may be a standard sector or a partial sector as shown in fig. 1, and the specific shape of the sector area is not limited in this embodiment.
Optionally, an adhesion metal layer is disposed between the quartz wafer 3 and the electrode 5. The metal adopted by the adhesion metal layer is chromium, and the thickness range of the adhesion metal layer is 1-3 nanometers.
Optionally, the metal used for the electrode is gold, and the thickness of the electrode is greater than 100 nm. The increase of the thickness of the electrode can improve the bonding strength between the gold electrode and the nano silver adhesive.
Because the adhesion force between the sintered nano silver colloid and the gold electrode is slightly poor, in order to solve the problem, a layer of chromium is prepared between the gold electrode and the surface of the quartz wafer, and the chromium layer is used as an adhesion metal layer to improve the adhesion strength between the gold electrode and the quartz wafer.
According to the quartz crystal resonator, the quartz crystal wafer is bonded with the plurality of reeds through the nano-silver adhesive, so that the aging rate of the quartz crystal resonator can be reduced, the production yield of the quartz crystal resonator is improved, pre-aging for one month is not needed, and the production period can be greatly shortened. The metal chromium is arranged on the quartz wafer, so that the adhesion strength between the gold electrode and the quartz wafer is improved. The bonding strength between the gold electrode and the nano silver paste is improved by enlarging the gold plating area at the edge of the quartz wafer and increasing the gold plating thickness.
Fig. 2 is a schematic diagram illustrating a method for manufacturing a quartz crystal resonator according to this embodiment, which is described in detail below.
Fig. 3(1) shows a first predetermined coating fixture, and fig. 3(2) shows a second predetermined coating fixture.
Optionally, as shown in fig. 3(1), the first preset coating clamp is configured to set a hollow area in a central area and an edge preset area of a clamp film, the central area is communicated with any edge preset area, and the clamp film is a clamp film having the same shape and size as the quartz wafer;
the edge preset area is an area corresponding to the bonding position of the reed and the quartz wafer, and the edge preset area is a fan-shaped area. In the embodiment, the fan-shaped electrode is adopted, so that the gold plating area at the edge of the quartz wafer can be enlarged, the contact area between the nano silver colloid and the quartz wafer is increased, and the bonding strength between the gold electrode and the nano silver colloid is improved.
Optionally, as shown in fig. 3(2), the second preset coating fixture is configured to set a hollow area in a central area of the fixture film, and communicate a preset edge area of the second preset coating fixture at an edge of the central area to form a hollow spoon shape.
Optionally, an electrode layer is deposited on the entire surface of the quartz wafer. The electrodes on the vapor plating of the hollow areas of the first preset film coating clamp and the second preset film coating clamp are directly arranged on the surface of the quartz wafer.
Optionally, the metal used in the electrode layer may be gold, and the thickness of the electrode layer may be greater than 100 nm. The thickness of the electrode layer is increased, and the bonding strength between the gold electrode and the nano silver adhesive can be further improved.
Optionally, before this step, the method further includes:
and respectively evaporating and coating metal layers on the front surface and the back surface of the quartz wafer.
Because the adhesion force between the sintered nano silver colloid and the gold electrode is slightly poor, in order to solve the problem, a layer of chromium is evaporated before the electrode is evaporated on the surface of the quartz wafer, and the chromium layer is used as an adhesion layer to improve the adhesion strength between the gold electrode and the wafer.
Optionally, the surface of the quartz wafer is cleaned, and then the adhesion metal layers are respectively evaporated on the front side and the back side of the quartz wafer. The metal adopted by the adhesion metal layer is chromium, and the thickness range of the adhesion metal layer is 1-3 nanometers. For example, the thickness of the adhesion metal layer may be 2 nanometers.
Then, the first preset coating clamp is placed on the front side of the quartz wafer adhered with the metal layer, and the second preset coating clamp is placed on the back side of the quartz wafer adhered with the metal layer, and then the electrode layer is evaporated.
And 202, removing the first preset coating clamp and the second preset coating clamp to obtain a quartz wafer sample.
Optionally, after removing the first and second pre-determined coating jigs, an electrode may be formed on the surface of the quartz wafer.
And step 203, respectively coating nano silver adhesive on a plurality of reeds arranged on the base.
In this embodiment, in order to improve the bonding firmness, a proper amount of nano-silver adhesive may be coated on the reed, and then the reed is used to fasten the quartz wafer sample, and then the nano-silver adhesive is coated on the contact position between the quartz wafer sample and the reed.
And 204, placing the quartz crystal sample in the plurality of reeds, fastening, and coating the nano silver adhesive between the quartz crystal and each reed again to obtain a first quartz crystal resonator sample.
Optionally, the nano silver paste coated in this step can cover the electrode sector, i.e. the sector electrode on the surface of the quartz wafer, so as to improve the bonding firmness.
And step 205, sintering and recrystallizing the first quartz crystal resonator sample, and packaging the recrystallized second quartz crystal resonator sample to obtain the quartz crystal resonator.
As shown in fig. 4, the sintering and recrystallization processes of this step may include the following steps:
Optionally, the nano silver paste in the annealing furnace is prevented from being oxidized, and when the first quartz crystal resonator sample is heated, the annealing furnace is filled with nitrogen.
Alternatively, the temperature curve diagram of the sintering and recrystallization of the nano-silver colloid shown in fig. 5 is shown. The first preset time may be 1 hour, the first preset temperature may be 275 deg.c, and the second preset time may be 2 hours at the time of the first heating. Namely, the temperature of the first quartz crystal resonator sample is raised to 275 ℃ within 1 hour, and the temperature of 275 ℃ is kept for 2 hours, and then the nano silver colloid is sintered.
And 402, when the second preset time is up, pumping the annealing furnace to a high vacuum state, and heating the annealing furnace to enable the temperature in the annealing furnace to reach the second preset temperature in a third preset time.
Alternatively, the third preset time may be 1 hour, and the second preset temperature may be 400 ℃. That is, the temperature of the annealing furnace was raised to 400 ℃ before recrystallization was performed.
And 403, when the temperature in the annealing furnace reaches a second preset temperature, keeping the second preset temperature for a fourth preset time.
Optionally, the fourth preset time may be 4 hours, at this time, the nano silver paste is recrystallized and further condensed into a block, mutual diffusion occurs between silver atoms of the nano silver paste and gold atoms of the gold electrode, and the bonding force is further enhanced.
optionally, the fifth preset time may be 3 hours.
And 405, performing vacuum cold press welding packaging on the second quartz crystal resonator sample to obtain the quartz crystal resonator.
After the nano silver colloid is subjected to the special sintering, high-temperature recrystallization treatment is required after the nano silver colloid is sintered, the recrystallization temperature is required to be higher than the recrystallization temperature of gold and silver, the gold and the silver are diffused mutually, and the bonding strength between the gold electrode and the nano silver colloid is further enhanced.
According to the preparation method of the quartz crystal resonator, the nano silver adhesive is adopted to replace a conductive organic polymer taking a macromolecule as a matrix, so that the aging rate of the quartz crystal resonator is reduced, pre-aging for one month is not needed, and the production period is greatly shortened. The metal chromium is arranged on the quartz wafer, so that the adhesion strength between the gold electrode and the quartz wafer is improved. The bonding strength between the gold electrode and the nano silver paste is improved by enlarging the gold plating area at the edge of the quartz wafer and increasing the gold plating thickness.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A quartz crystal resonator comprising: the reed bonding device comprises a base, reeds, a quartz wafer and a bonding agent, wherein the base is provided with the reeds, the quartz wafer is arranged among the reeds, and the quartz wafer is bonded with the reeds through the bonding agent.
2. The quartz crystal resonator according to claim 1, wherein the nano silver colloid contains nano silver particles having a pure silver content of 99% or more.
3. The quartz crystal resonator of claim 2, further comprising: an electrode;
electrodes are respectively arranged in a central area and an edge preset area of the front surface of the quartz wafer, wherein the electrode arranged in the central area is communicated with the electrode arranged in any one of the edge preset areas;
the preset edge area is an area corresponding to the bonding position of the reed and the quartz wafer.
4. The quartz crystal resonator according to claim 3, wherein the edge predetermined region is a fan-shaped region, and the nano-silver paste covers the fan-shaped region.
5. The quartz crystal resonator according to claim 3 or 4, wherein an adhesion metal layer is provided between the quartz wafer and the electrode.
6. The quartz crystal resonator of claim 5,
the metal adopted by the adhesion metal layer is chromium, and the thickness range of the adhesion metal layer is 1-3 nanometers;
the metal adopted by the electrode is gold, and the thickness of the electrode is more than 100 nanometers.
7. A method for manufacturing a quartz crystal resonator is characterized by comprising the following steps:
arranging a first preset coating clamp on the front side of a quartz wafer, arranging a second preset coating clamp on the back side of the quartz wafer, and then evaporating an electrode layer;
removing the first preset coating clamp and the second preset coating clamp to obtain a quartz wafer sample;
coating nano silver adhesive on a plurality of reeds arranged on the base respectively;
placing the quartz crystal wafer sample in the plurality of reeds and fastening, and coating the nano silver adhesive between the quartz crystal wafer and each reed again to obtain a first quartz crystal resonator sample;
and sintering and recrystallizing the first quartz crystal resonator sample, and packaging the recrystallized second quartz crystal resonator sample to obtain the quartz crystal resonator.
8. The method for manufacturing a quartz crystal resonator according to claim 7, wherein after the first pre-determined coating jig is placed on the front surface of the quartz wafer, and after the second pre-determined coating jig is placed on the back surface of the quartz wafer, and before the electrode layer is evaporated, the method further comprises:
respectively evaporating and coating metal layers on the front surface and the back surface of the quartz wafer;
arranging a first preset coating clamp on the front surface of a quartz wafer, arranging a second preset coating clamp on the back surface of the quartz wafer, and evaporating an electrode layer, wherein the method comprises the following steps:
and arranging the first preset coating clamp on the front surface of the quartz wafer adhered with the metal layer, arranging the second preset coating clamp on the back surface of the quartz wafer adhered with the metal layer, and evaporating the electrode layer.
9. The method for manufacturing a quartz crystal resonator according to claim 7 or 8, wherein the first pre-determined coating jig is a jig film having the same shape and size as the quartz wafer, and has a hollowed-out area in a central area and an edge pre-determined area of the jig film, and the central area is communicated with any one of the edge pre-determined areas;
the edge preset area is an area corresponding to the bonding position of the reed and the quartz wafer, and the edge preset area is a fan-shaped area.
10. The method for manufacturing a quartz-crystal resonator according to claim 7 or 8, wherein the steps of sintering and recrystallizing the first quartz-crystal resonator sample and packaging the second quartz-crystal resonator sample after recrystallization to obtain the quartz-crystal resonator comprise:
filling nitrogen into an annealing furnace, placing the first quartz crystal resonator sample in the annealing furnace, heating to enable the temperature in the annealing furnace to reach a first preset temperature within a first preset time, and keeping the first preset temperature for a second preset time;
when the second preset time is up, the annealing furnace is pumped to a high vacuum state, and the annealing furnace is heated, so that the temperature in the annealing furnace reaches a second preset temperature within a third preset time;
when the temperature in the annealing furnace reaches a second preset temperature, keeping the second preset temperature for a fourth preset time;
when the fourth preset time is up, cooling the annealing furnace to enable the temperature in the annealing furnace to reach room temperature within the fifth preset time, and obtaining a second quartz crystal resonator sample;
and carrying out vacuum cold pressure welding packaging on the second quartz crystal resonator sample to obtain the quartz crystal resonator.
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