CN113621851A - High-performance film getter and application thereof - Google Patents
High-performance film getter and application thereof Download PDFInfo
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- 239000010408 film Substances 0.000 claims abstract description 68
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 27
- 239000000956 alloy Substances 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 239000013077 target material Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 36
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 239000010935 stainless steel Substances 0.000 claims description 13
- 229910001220 stainless steel Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000008204 material by function Substances 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 description 18
- 238000012360 testing method Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 11
- 238000009461 vacuum packaging Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C16/00—Alloys based on zirconium
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of functional materials, in particular to a high-performance film getter and application thereof. The invention discloses a film getter which is prepared by using a getter alloy target material with the same chemical composition as the getter alloy target material, wherein the film getter comprises a main element, and the main element is one or two of Ti and Zr; preferably, the thin film getter further comprises any one or any combination of Sc, Y, V, Hf and Ta. The film getter has high gas absorption capacity, can effectively maintain the high vacuum performance requirement of an MEMS chip device, and achieves the stability and high sensitivity of signals.
Description
Technical Field
The invention relates to the technical field of functional materials, in particular to a high-performance film getter and application thereof.
Background
Vacuum packaging has been a long time, and early studies on gas discharge have involved vacuum packaging. The invention of molecular pump and diffusion pump in the beginning of 20 th century makes the vacuum technology develop dramatically. With the development of vacuum electron tube technology, the vacuum packaging technology gradually forms packaging forms of glass-glass, glass-metal, metal-ceramic and the like.
However, for the vacuum packaging of the newly developed high-sensitivity smart sensor, especially the MEMS (micro electro mechanical system) vacuum packaging technology, although many electro vacuum packaging technologies can be used for reference, due to the limitation that the MEMS device has a small volume and the packaging process temperature is lower than 400 ℃, many effective technologies and methods in the electro vacuum technology are not suitable for the MEMS vacuum packaging, and therefore the MEMS vacuum packaging faces a great challenge. The traditional technical scheme is that in the vacuum packaging of MEMS, a film getter of elementary metals such as titanium and zirconium is placed in an MEMS device to absorb residual gas in the device, so as to achieve the purpose of vacuum packaging. However, the film getters of elemental metals titanium and zirconium have poor kinetics in the gettering process, thereby affecting the performance of the corresponding MEMS devices. Therefore, there is a need to invent a new thin film getter.
Disclosure of Invention
The technical personnel of the invention find that in Zr series alloy and Ti series alloy, Y element and Sc element are added separately or compositely, which is beneficial to improving the suction dynamics of main element Ti or Zr, efficiently absorbing residual gas of a cavity of an MEMS chip device, maintaining the device in a high vacuum state and prolonging the service life of the MEMS device.
The invention aims to invent a novel film getter, which has high gettering capacity, can effectively maintain the high vacuum performance requirement of an MEMS chip device and achieves the stability and high sensitivity of signals.
Specifically, the technical scheme of the invention is as follows:
the invention discloses a film getter in a first aspect, which is characterized by comprising a main element, wherein the main element is one or two of Ti and Zr; preferably, the thin film getter further comprises any one or any combination of Sc, Y, V, Hf and Ta.
Preferably, the chemical components of the film getter comprise the following components in percentage by weight:
wherein the main element is one or two of Ti and Zr.
More preferably, the content of the main element is 32 wt% to 80 wt%, the content of the Sc component is 0.1 wt% to 28 wt%, the content of the Y component is 0.1 wt% to 28 wt%, the content of the V component is 0.1 wt% to 1.8 wt%, the content of the Hf component is 0.1 wt% to 1.8 wt%, and the content of the Ta component is 0 to 1.8 wt%.
Preferably, the thin film getter is:
(TixZry)34-90(Y1-aSca)0-30(V1-b-cHfbTac)0-2(wt%); wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is equal to 1; a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 0.5, and c is more than or equal to 0 and less than or equal to 0.5;
preferably, the thin film getter is: (Ti)xZry)35-80(Y1-aSca)1-28(V1-b-cHfbTac) (wt%); wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is equal to 1; a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 0.5, and c is more than or equal to 0 and less than or equal to 0.5.
In some embodiments of the invention, the thin film getter is selected from the group consisting of:
Zr72Sc28(wt％)、
Zr72Y28(wt％)、
Zr40Ti33Y27(wt％)、
Zr70Hf2Y28(wt％)、
Ti72Sc28(wt％)
Ti72Y28(wt.%) or
Zr60Ti10Ta1Hf1V1Y24Sc3(wt％)。
In some of these embodiments, the host element contains at least Zr. In some of these embodiments, the host element is a combination of Ti, Zr, and Hf or Ta.
In some embodiments, the getter film getter comprises at least Zr, Sc, or Zr and Y. In some embodiments, the getter film getter comprises at least Ti, Sc, or Ti and Y.
The invention discloses a thin film getter, which is prepared by taking an alloy getter target material with the same chemical composition as the thin film getter as a raw material.
Preferably, the preparation method of the film getter comprises the following steps:
and sputtering the alloy getter target on a substrate by a magnetron sputtering process to obtain the film getter.
More preferably, the activation temperature of the film getter is 250-710 ℃, the activation time is 15-40 min, and the initial hydrogen absorption rate is 100-1200 ml/s.cm2The adhesive force between the thin film getter and the substrate is 1-5N/cm; and/or the thickness of the thin film getter is 1-12 μm.
More preferably, the substrate is selected from at least one of a silicon wafer, a silicon germanium wafer, a gallium nitride wafer and a SiC wafer; or
At least one of quartz, sapphire, glass; or
A metal thin film;
the metal film is selected from at least one of a stainless steel film, an NI-Cr resistance alloy film, a stainless steel film, a valveable alloy film, a ceramic film or an inorganic metal film.
Preferably, the alloy getter target in the magnetron sputtering process is selected from: a target material with a diameter of 1-8 inches; or rectangular target, size: length (0 to 990mm) x width (0 to 230mm) x thickness (4 to 10 mm).
In some embodiments of the invention, the magnetron sputtering process: the power is 50-800W, and the pressure is 0.01-10 Pa.
The substrate is various MEMS device wafers (substrates such as silicon wafers, germanium-silicon wafers, germanium wafers or gallium nitride wafers, SiC wafers and the like); sputtering a glass (quartz, sapphire, etc.) insulating wafer; or on a metal thin film substrate sample, such as a stainless steel substrate and a thin film thereof, a NI — Cr resistive alloy thin film substrate, a metal thin film such as a stainless steel thin film, a valve-able alloy thin film, a ceramic thin film, or an inorganic metal thin film.
It should be understood that the substrate of the present invention is not limited to the above-mentioned kind, and any suitable substrate can be selected by those skilled in the art according to the needs and is within the scope of the present invention.
In a third aspect, the invention discloses a MEMS device comprising the thin film getter described above.
On the basis of the common general knowledge in the field, the above-mentioned preferred conditions can be combined arbitrarily without departing from the concept and the protection scope of the invention.
Compared with the prior art, the invention has the following remarkable advantages and effects:
the invention discloses a novel film getter, which is prepared by taking an alloy getter target material with the same chemical composition as the film getter as a raw material through magnetron sputtering. The film getter has high gas absorption capacity, can effectively maintain the high vacuum performance requirement of an MEMS chip device, and achieves the stability and high sensitivity of signals.
Drawings
Fig. 1 is a schematic illustration of a thin film getter on a silicon cell substrate with rounding in example 1, example 5, and example 6;
FIG. 2 is a schematic view of a stainless steel substrate according to example 2 or 7;
FIG. 3 is a schematic view of a stainless steel substrate in example 3;
FIG. 4 is a schematic representation of a valveable alloy matrix according to example 4.
Detailed Description
The technical solutions of the present invention are described in detail below with reference to the drawings and the embodiments, but the present invention is not limited to the scope of the embodiments.
The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions. The reagents and starting materials used in the present invention are commercially available.
Example 1
A 2 inch diameter target was used. Sputtering the alloy getter target on a 2-inch base silicon wafer on a magnetron sputtering machine to obtain a film getter (see figure 1), wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 0.01 Pa; the temperature of the base substrate sample is 25 ℃; the sputtering power is 45W; to obtainThe thickness of the obtained thin film getter was 1.8 μm, and the component of the thin film getter was Zr72Sc28(wt%), bonding strength with silicon cell substrate 1.8N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4Keeping the temperature at 320 ℃ for 30 minutes under Pa, and enabling the initial hydrogen absorption rate of the film getter to reach 350ml/s.cm2。
Example 2
A 4 inch diameter target was used. Sputtering the alloy getter target on a 4-inch stainless steel substrate (shown in figure 2) on a magnetron sputtering machine to obtain a film getter, wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 0.1 Pa; the temperature of the base substrate sample is 30 ℃; the sputtering power is 60W; the thickness of the thin film getter is 2.0 microns, and the component of the thin film getter is Zr72Y28(wt%), bonding strength to stainless steel substrate 1.8N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4Keeping the temperature at 350 ℃ for 15 minutes under Pa, and enabling the initial hydrogen absorption rate of the film getter to reach 385ml/s.cm2。
Example 3
A target of 8 inches in diameter was used. Sputtering the alloy getter target on an 8-inch stainless steel substrate (see figure 3) on a magnetron sputtering machine to obtain a film getter, wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 1.2 Pa; the temperature of the base substrate sample is 28 ℃; the sputtering power is 120W; the thickness of the thin film getter is 2.1 microns, and the component of the thin film getter is Zr40Ti33Y27(wt%), bonding strength with stainless steel substrate 2.5N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4Keeping the temperature at 380 ℃ for 15 minutes under Pa, and enabling the initial hydrogen absorption rate of the film getter to reach 428ml/s.cm2。
Example 4
A target of 8 inches in diameter was used. Sputtering the alloy getter target on an 8-inch valvable alloy substrate (shown in figure 4) on a magnetron sputtering machine to obtain a film getter, wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 1.2 Pa; the temperature of the base substrate sample is 32 ℃; the sputtering power is 130W; film(s)The thickness of the getter was 2.15 μm, and the composition of the thin film getter was Zr70Hf2Y28(wt%), bonding strength to valve alloyable substrate 3N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4Keeping the temperature at 400 ℃ for 15 minutes under Pa, and enabling the initial hydrogen absorption rate of the film getter to reach 402ml/s.cm2。
Example 5
A target of 8 inches in diameter was used. Sputtering the alloy getter target on an 8-inch silicon crystal cell substrate on a magnetron sputtering machine to obtain a film getter (see figure 1), wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 1.2 Pa; the temperature of the base substrate sample is 32 ℃; the sputtering power is 130W; the thickness of the film getter is 2.15 microns, and the component of the film getter is Ti72Sc28(wt%), bonding strength with silicon cell substrate 3.8N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4The initial hydrogen absorption rate of the film getter reaches 482ml/s.cm under Pa and the temperature is kept at 410 ℃ for 15 minutes2。
Example 6
A 4 inch diameter target was used. Sputtering the alloy getter target on a 4-inch silicon crystal cell substrate on a magnetron sputtering machine to obtain a film getter (see figure 1), wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 1.5 Pa; the temperature of the base substrate sample is 33 ℃; the sputtering power is 180W; the thickness of the film getter is 2.05 microns, and the composition of the film getter is Ti72Y28(wt%), bonding strength with silicon cell substrate 2.8N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4Keeping the temperature at 450 ℃ for 30 minutes under Pa, and enabling the initial hydrogen absorption rate of the film getter to reach 501ml/s.cm2。
Example 7
A 4 inch diameter target was used. Sputtering the alloy getter target on a 4-inch stainless steel substrate (shown in figure 2) on a magnetron sputtering machine to obtain a film getter, wherein the magnetron sputtering process parameters are as follows: the sputtering pressure of the cavity is 1.5 Pa; the temperature of the base substrate sample is 29 ℃; the sputtering power is 230W; of film gettersThickness of 2.25 microns and thin film getter composition of Zr60Ti10Ta1Hf1V1Y24Sc3(wt%), bonding strength with silicon cell substrate 18N/cm. Testing the air suction performance of the film getter, namely, testing the air suction performance of the film getter at a vacuum degree of 3-4 multiplied by 10-4Keeping the temperature at 500 ℃ for 30 minutes under Pa, and enabling the initial hydrogen absorption rate of the film getter to reach 628ml/s.cm2。
The embodiments 1 to 7 are described in which the technical features can be combined arbitrarily, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described in the present application, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A thin film getter comprising a bulk element, wherein the bulk element is one or both of Ti and Zr; preferably, the thin film getter further comprises any one or any combination of Sc, Y, V, Hf and Ta.
2. The thin film getter of claim 1, wherein the composition of the thin film getter comprises, in weight percent:
wherein the main element is one or two of Ti and Zr.
3. The thin film getter of claim 1, wherein the composition of the host element is 32 wt% to 80 wt%, the composition of Sc is 0.1 wt% to 28 wt%, the composition of Y is 0.1 wt% to 28 wt%, the composition of V is 0.1 wt% to 1.8 wt%, the composition of Hf is 0.1 wt% to 1.8 wt%, and the composition of Ta is 0 to 1.8 wt%.
4. The thin film getter of claim 1, wherein the thin film getter is:
(TixZry)34-90(Y1-aSca)0-30(V1-b-cHfbTac)0-2(wt%); wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is equal to 1; a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 0.5, and c is more than or equal to 0 and less than or equal to 0.5;
preferably, the thin film getter and the getter alloy target are: (Ti)xZry)35-80(Y1-aSca)1-28(V1-b-cHfbTac) (wt%); wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is equal to 1; a is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0 and less than or equal to 0.5, and c is more than or equal to 0 and less than or equal to 0.5.
5. The thin film getter of claim 1, wherein the thin film getter is selected from the group consisting of:
Zr72Sc28(wt％)、
Zr72Y28(wt％)、
Zr40Ti33Y27(wt％)、
Zr70Hf2Y28(wt％)、
Ti72Sc28(wt％)
Ti72Y28(wt.%) or
Zr60Ti10Ta1Hf1V1Y24Sc3(wt％)。
6. The thin film getter is characterized by being prepared by taking a getter alloy target material with the same chemical composition as the getter alloy target material as a raw material.
7. The thin film getter of claim 6, wherein the method of making the thin film getter comprises:
and sputtering the gas alloy target on a substrate by a magnetron sputtering process to obtain the film getter.
8. The thin film getter of claim 7, wherein the activation temperature of the thin film getter is 250-710 ℃, the activation time is 15-40 min, and the initial hydrogen absorption rate is 100-1200 ml/s.cm2The adhesive force between the thin film getter and the substrate is 1-5N/cm; and/or the thickness of the thin film getter is 1-12 μm.
9. The thin film getter of claim 7, wherein the substrate is selected from at least one of a silicon wafer, a silicon germanium wafer, a germanium wafer or a gallium nitride wafer, a SiC wafer; or
At least one of quartz, sapphire, glass; or
A metal thin film;
the metal film is selected from at least one of a stainless steel film, an NI-Cr resistance alloy film, a stainless steel film, a valveable alloy film, a ceramic film or an inorganic metal film.
10. MEMS device, characterized in that it comprises a thin film getter according to any of claims 6 to 9.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114231814A (en) * | 2021-12-17 | 2022-03-25 | 上海晶维材料科技有限公司 | Preparation method and application of passive vacuum maintenance getter alloy |
| CN114231819A (en) * | 2021-12-17 | 2022-03-25 | 上海晶维材料科技有限公司 | Preparation method and application of passive vacuum maintaining alloy |
| CN117431511A (en) * | 2023-10-25 | 2024-01-23 | 上海晶维材料科技有限公司 | Multi-element alloy target material, multi-element alloy film getter and preparation method thereof |
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