CN109680249A - Non-evaporable film getter and preparation method thereof - Google Patents
Non-evaporable film getter and preparation method thereof Download PDFInfo
- Publication number
- CN109680249A CN109680249A CN201910072069.8A CN201910072069A CN109680249A CN 109680249 A CN109680249 A CN 109680249A CN 201910072069 A CN201910072069 A CN 201910072069A CN 109680249 A CN109680249 A CN 109680249A
- Authority
- CN
- China
- Prior art keywords
- getter
- film
- thin film
- film getter
- evaporable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims abstract description 17
- 230000008020 evaporation Effects 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 239000013077 target material Substances 0.000 claims abstract description 7
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 80
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 18
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 15
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910018084 Al-Fe Inorganic materials 0.000 claims description 4
- 229910018192 Al—Fe Inorganic materials 0.000 claims description 4
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 4
- 229910002056 binary alloy Inorganic materials 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 1
- 230000003434 inspiratory effect Effects 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000002061 nanopillar Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- 239000011135 tin Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000005247 gettering Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
- B01J20/28014—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their form
- B01J20/28033—Membrane, sheet, cloth, pad, lamellar or mat
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
- C23C14/226—Oblique incidence of vaporised material on substrate in order to form films with columnar structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of preparation method of non-evaporable film getter, include the steps that the mode of evaporation or magnetron sputtering is used to be deposited on target material in the form of single-layer or multi-layer in encapsulation cavity；When deposit, inclination encapsulation cavity or evaporation source/target, to obtain the film with inclination and isolated nano-pillar micro-structure in encapsulation cavity.The present invention also provides non-evaporable film getters prepared by the preparation method.Preparation method through the invention, can be prepared column, porous type, bigger serface film getter, be easier to realize gas body diffusion, so as to increase the inspiratory capacity of film getter.
Description
Technical field
The present invention relates to metal getter technical fields, and in particular to a kind of non-evaporable film getter and its preparation side
Method.
Background technique
In vacuum electronics technology, residual activity gas can be to MEMS such as microbolometer, gyroscope, micromechanical resonators
Reliability, stability and the service life of device generate important influence, often lead to device performance decline even failure
One of the main reasons.Now, it with the lasting diminution of device volume, is adsorbed using film getter (getter film) remaining
Active gases molecule, maintenance and the vacuum level for improving device are that the inevitable development of Vacuum Package (Vacuum Packaging) becomes
Gesture.
MEMS (Microelectro Mechanical Systems) device or the Main functional units of system have sensor
And driver, the unit that there is " dynamic " is the characteristic feature of most of MEMS device.The component of movement can be by air environment
To air damping, the quality factor (Q value) of device, such as various MEMS oscillators, resonator filter, MEMS gyroscope are influenced
Deng.Vacuum Package can provide local vacuum environment, make moving component by air damping small as far as possible, be that one kind proposes high q-factor
Effective means；Equally, micro- brake of micro-metering bolometer, heat sensor, electric heating etc. is in order to maintain heat, avoid and air point
Son carries out heat exchange, it is also desirable to inhibit cross-ventilation/conduction bring heat loss in high vacuum conditions；In addition, some energy
Collector and microfluidic device also need to reduce loss in high vacuum conditions, change response time and amplitude variation.Therefore,
These devices usually require to be packaged under vacuum conditions, but during the service life of device, device and encapsulating material
It can discharge or penetrate into gas from outside, in order to make related MEMS device that can reliably work in whole life cycle, encapsulation
The vacuum degree and encapsulated vacuum retentivity of cavity are the research emphasis in nearly stage.
In general, Vacuum Package using film getter make to encapsulate cavity reach certain vacuum degree and can balancing device use
Enter the gas of encapsulation cavity in period.Film getter is a kind of by the special thin of physics chemical action absorption residual gas
Membrane material, usually metal such as zirconium, titanium, vanadium, niobium or tantalum, or the alloy composition with other transition elements, rare earth or aluminium are general to have
There are high chemical activity, low saturated vapor pressure and bigger serface, to the H in vacuum and inert atmosphere2、O2、N2、CO、CO2And CxHy
Etc. residual activities gas have strong suction-operated.When gas molecule collision to getter material surface, getter is spontaneously
Physical absorption is carried out, physisorbed molecules are spread along gettering material surface and interface；Under conditions of meeting chemical activity energy,
Physical absorption switchs to chemisorption, and the exchange and transfer of electronics, under concentration gradient and barometric gradient, surface adsorbed molecules occurs
It is spread with chemical product to material internal.So that film getter can adsorb the residual gas after encapsulating in cavity, reach cavity
To higher vacuum degree；And film getter should be able to maintain activity, to maintain the vacuum degree of cavity.
Now, the packaging technology of MEMS is wafer-level packaging (WLP:Wafer Level from traditional ceramic package development
Packaging), wafer-level packaging uses micro fabrication, can greatly reduce device overall dimension, reduction is produced into
This, improves the consistency, yield rate and reliability of product.Low-temperature wafer grade Vacuum Package usually material need to be made sufficiently to deaerate after again
Sealing ring bonding is completed to form closed cavity, then activates film getter to adsorb residual gas in cavity and maintain cavity
Vacuum degree.The gulp capacity of film getter is the key factor of Vacuum Package: the gulp capacity of film getter should be able to make
Cavity reaches certain vacuum degree, and vacuum degree (the usually 10-20 for keeping its gettering ability that cavity is made to maintain certain time
Year).The present invention is a kind of method for manufacturing porous type film getter, and porous structure considerably increases the specific surface of getter
Product is easier to maintain the vacuum degree of Vacuum Package cavity to increase the gulp capacity of film getter, to extend the first device of encapsulation
The service life of part.
Film suction technology absorbs the active gases in incandescent lamp using red phosphorus originating from 19th century to extend the longevity of filament
Life.From 20th century, barium starts to be widely used in electron tube and cathode-ray tube to obtain good vacuum atmosphere；Later,
The other materials such as titanium, zirconium, rare earth are applied to Vacuum Field as getter.Now, the main direction of development of film getter
One of for change alloy component pointedly to absorb certain residual gas (such as H2, CO etc.) or it is used for special-purpose: such as commodity
NameIt manufactures and the weight group sold becomes about 900 DEG C of the activationary temperature of 16% getter of Zr 84%-Al (U.S. is special
3203901) benefit, is suitable only for being integrated in device resistant to high temperature；Trade name St198TM is manufactured and the weight group sold becomes Zr
Alloy degasser (the United States Patent (USP) 4306887 of 76.6%-Fe 23.4%；Deutsche Bundespatent 3012968) only show limited nitrogen
Aspiration is attached；Trade name St787 manufacture and sell weight composition Zr 80.8%-Co 14.2%- rare earth 5% alloy air-breathing
Agent (Chinese patent 1335200；United States Patent (USP) 5961750；Deutsche Bundespatent 69801456；European patent 0869195) activation temperature
About 300 DEG C of degree, but such getter uses the reversible adsorption for being confined to hydrogen He its isotope；Trade name St707TM manufacture
And alloy degasser (the United States Patent (USP) 4312669 of the weight composition Zr 70%-V 24.6%-Fe 5.4% sold；It is German special
The activationary temperature of benefit 3003114) is low (about 350-500 DEG C), but such getter contains vanadium, and oxide is toxic.In recent years,
Become the emphasis of research by changing film getter structure to enhance pumping property also, such as: United States Patent (USP) 7745014, China
Patent 1572898, Deutsche Bundespatent 602004019367, European patent 1518599 elaborate a kind of multilayer getter, the getter
Main structure is the film getter of high-specific surface area, surface cover one layer it is fine and close can low-temp activation getter, to drop
The activationary temperature of low getter improves inspiratory capacity；United States Patent (USP) 8039285, United States Patent (USP) 20080213539, Deutsche Bundespatent
602006012285, European patent 1859482 proposes a kind of novel getter structure, the structure by getter protective layer (tin) and
Protective layer removal material (the gold, silver or platinum) composition being connected by film getter with film getter, in certain activationary temperature
Under, gold, silver or platinum and tin, which dissolve each other, to react thus the protective layer removal material for dissolving tin and being adsorbed in by film getter
Material, the active surface of exposed film getter, thus activated degasser, which can make film getter surface before activation
It is not comtaminated, but the protective layer removal material technology that production is connected with film getter is complicated, increases cost.
1. the activationary temperature of natural oxidizing layer limitation film getter: film getter is generally deposited on using magnetron sputtering
It encapsulates in nut cap, wafer is taken out after the completion of deposit and is put into togerther in wafer bonding machine with substrate and encapsulates bonding.Take out wafer
Film getter meeting surface oxidation in the process, which is the diffusion barrier layer of film getter, limits film suction
The activationary temperature of gas agent.
2. film getter is usually compact texture, gas spreads to inhale to film getter inner bulk when heat activation
Attached associated residual gas, but its body diffusion also corresponding stopping when hot activation completion.So the lasting suction of dense form film getter
Gas performance is only related to the surface area of film getter.
3. the unsustainable air-breathing of film getter limits the service life of component: there are one for sealing ring in Vacuum Package
Fixed gas leakage it requires that film getter continues air-breathing under the conditions of long-term work, keep the vacuum degree of cavity thin to realize
The purpose that film getter technology is mutually compatible with vacuum encapsulation process, when the dense form film getter of the prior art is difficult to long
Between maintain cavity vacuum degree.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of preparation methods of non-evaporable film getter, pass through the party
Method can be prepared column, porous type, bigger serface film getter, be easier to realize gas body diffusion, so as to
Increase the inspiratory capacity of film getter.
In order to solve the above-mentioned technical problems, the present invention provides a kind of preparation method of non-evaporable film getter, packets
Include the step for using the mode of evaporation or magnetron sputtering to be deposited on target material in the form of single-layer or multi-layer in encapsulation cavity；
Wherein, in deposit, inclination encapsulation cavity or evaporation source/target, to obtained in encapsulation cavity with inclination and separation
The film of nano-pillar micro-structure.
In the present invention, the tilt angle and separating distance of the nano-pillar can be inclined by encapsulation cavity or evaporation source/target
Rake angle decision, specific data fit following formula:
α=2 tan × tan β
Wherein, evaporation source/target tilt angle is α, and the tilt angle of nano-pillar is β.The column construction can increase
Add the specific surface area of material, to increase the inspiratory capacity of film getter.
In a kind of preferred embodiment of the invention, the evaporation source or target are selected from following components:
Ti,Zr,Nb,Ta,V,Y；Zr and Ti, Cr, Mn, Fe, Co, Ni, Al, Cu, Sn, Y, Ni, any one rare earth element
The bianry alloy of formation；The binary that Ti and Cr, Mn, Fe, Co, Ni, Al, Cu, Sn, Y, Ni, any one rare earth element are formed is closed
Gold；Zr-V-Ti, Zr-Co- rare earth element, Zr-V-Fe, Zr-Al-Fe, Zr-Ni-Fe ternary alloy three-partalloy.
It further include the protection in film surface covering 10-50nm thickness in a kind of preferred embodiment of the invention
The step of layer.The protective layer can prevent getter to be contaminated on surface in un-activation, can reduce the activationary temperature of getter,
Increase inspiratory capacity.
In a kind of preferred embodiment of the invention, the protective layer is by way of evaporation or magnetron sputtering in institute
It states obtained from film surface deposit Au, Sn, Pt, Ni, Pd, Ag or Cu.
The present invention also provides non-evaporable film getters prepared by the preparation method.
In addition, the present invention also provides another preparation method of non-evaporable film getter, including using evaporation or
Target material is deposited on the step in encapsulation cavity by the mode of magnetron sputtering in the form of single-layer or multi-layer；Wherein, it is depositing
Before, the encapsulation cavity is performed etching, so that forming at least one inclined-plane in the cavity.
By means of the present invention, it can also be deposited in cavity and obtain porous, columnar thin-film getter, increase getter
Specific surface area, to increase the inspiratory capacity of film getter.
In the present invention, it can also be dry etching, etching angle can be between 0-90 degree that lithographic method, which can be wet etching,
Any angle.
In a kind of preferred embodiment of the invention, the target material is selected from following components:
Ti, Zr, Nb, Ta, V and Y metal；Zr and Ti, Cr, Mn, Fe, Co, Ni, Al, Cu, Sn, Y, Ni, any one rare earth
The bianry alloy that element is formed；Ti and Cr, Mn, Fe, Co, Ni, Al, Cu, Sn, Y, Ni, any one rare earth element formed two
First alloy；Zr-V-Ti, Zr-Co- rare earth element, Zr-V-Fe, Zr-Al-Fe, Zr-Ni-Fe ternary alloy three-partalloy.
It further include the protection in film surface covering 10-50nm thickness in a kind of preferred embodiment of the invention
The step of layer.
In a kind of preferred embodiment of the invention, the protective layer is by way of evaporation or magnetron sputtering thin
Film surface deposits Au, Sn, Pt, Ni, Pd, Ag or Cu and is formed.
The present invention also provides non-evaporable film getters prepared by the preparation method.
Beneficial effects of the present invention:
1. film getter of the invention is column, porous type, bigger serface film getter, porous state is easier to
The body diffusion of gas is realized, so as to increase the inspiratory capacity of film getter.Under same area, the film of large specific surface area
Getter can maintain the cavity vacuum degree of longer time, to extend the service life of encapsulation component.
2. the present invention is obtained with inclination corner structure by performing etching to cavity for depositing the chamber of film getter
Body, which can deposit out porous, columnar film getter, increase its specific surface area, to increase film getter
Inspiratory capacity.And for wafer-level vacuum packaged, which, which need not tilt cavity also and need not tilt evaporation source/target, can be obtained column
Shape porous type film getter will not from the difference in thickness for the film getter that wafer peripheral and crystal circle center may be not present
Cause the vacuum degree of packaging inconsistent, does not influence the homogeneity of product.
Detailed description of the invention
Fig. 1 be the inclination angle in the present invention evaporate/sputter schematic diagram；
Fig. 2 is the structural schematic diagram of the encapsulation cavity in the embodiment of the present invention 2；
Fig. 3 is the cross-sectional view of the porous type film getter of the matcoveredn of the embodiment of the present invention 1；
Fig. 4 is the cross-sectional view after the porous type film getter activation of the matcoveredn of the embodiment of the present invention 1.
Figure label explanation:
300,400, film getter；301,401, protective layer.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings and specific examples, so that those skilled in the art can be with
It more fully understands the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
Embodiment 1
Ti film is deposited on the silicon wafer that inclination angle is 50 ° and 70 ° respectively, deposits out the column that tilt angle is 29 ° and 46 °
Shape film.It should be respectively 31 ° and 54 ° that inclination angle, which meets α=2 theoretical formula tan × angle tan β, β theoretical value,.It is detected, it should
The porosity of film is respectively 25% and 55%, and it is thin to show that the method for the inclination angle deposit of the present embodiment can deposit out porous type
Film.
Then, layer gold is covered in the film surface, it is as shown in Figure 3 obtains membrane structure.Wherein 300 is thin for column-shaped porous type
Film getter, the nanometer protective layer of the 301 10-50 thickness covered for film getter surface, structure is dense form, which can
Getter is prevented to be contaminated on surface in un-activation.
Under 300 DEG C, the activation condition of 1h, above-mentioned film getter is activated, state when activation is as shown in figure 4, wherein
400 be the film getter (composition and structure are consistent with 301) of bigger serface, porous type column structure, and 401 protect for getter
Sheath (composition and 301 is unanimously).It can be seen from the figure that protective layer is presented in the form of island in getter surface, thus exposure
The film getter of bigger serface, porous type column structure, film getter starts air-breathing, and the film of bigger serface is inhaled
Gas agent is easier to realize the body diffusion of gas, and under same area, the film getter of large specific surface area can maintain the longer time
Cavity vacuum degree.Through detecting, the gettering ability of the columnar thin-film of the present embodiment is about 20 times of non-columnar film gettering ability, and
Film porosity is higher, and gettering ability is stronger.
Embodiment 2
Before depositing film, wet etching is carried out to cavity, etches the cavity such as Fig. 2, inclined angle is 54.7 °.
Then, film is deposited in the cavity, obtains porous type columnar thin-film.Through detecting, gettering ability is about that non-columnar film is inhaled
20 times of gas ability.
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention
It encloses without being limited thereto.Those skilled in the art's made equivalent substitute or transformation on the basis of the present invention, in the present invention
Protection scope within.Protection scope of the present invention is subject to claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910072069.8A CN109680249A (en) | 2019-01-25 | 2019-01-25 | Non-evaporable film getter and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910072069.8A CN109680249A (en) | 2019-01-25 | 2019-01-25 | Non-evaporable film getter and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109680249A true CN109680249A (en) | 2019-04-26 |
Family
ID=66194033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910072069.8A Pending CN109680249A (en) | 2019-01-25 | 2019-01-25 | Non-evaporable film getter and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109680249A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110863228A (en) * | 2019-11-29 | 2020-03-06 | 中山凯旋真空科技股份有限公司 | Titanium dioxide nanotube-based getter film and preparation method thereof |
| CN112144030A (en) * | 2020-09-16 | 2020-12-29 | 上海晶维材料科技有限公司 | Titanium-based rare earth alloy target and preparation method thereof |
| CN112176301A (en) * | 2020-09-16 | 2021-01-05 | 上海晶维材料科技有限公司 | High-performance zirconium-based rare earth alloy target and preparation method thereof |
| CN112342508A (en) * | 2020-09-25 | 2021-02-09 | 深圳市裕展精密科技有限公司 | Metal product and preparation method thereof, and metal composite and preparation method thereof |
| CN112626460A (en) * | 2020-11-23 | 2021-04-09 | 上海晶维材料科技有限公司 | High-performance Ti-Co-RE target material and preparation method of high-suction-capacity film getter |
| CN112973617A (en) * | 2019-12-12 | 2021-06-18 | 有研工程技术研究院有限公司 | Ti film getter and preparation method thereof |
| CN113061854A (en) * | 2021-03-19 | 2021-07-02 | 上海松尚国际贸易有限公司 | Method for preparing getter by utilizing AMAT PVD cavity and thin film getter thereof |
| CN113621851A (en) * | 2021-07-15 | 2021-11-09 | 上海晶维材料科技有限公司 | High-performance film getter and application thereof |
| CN114318233A (en) * | 2021-12-10 | 2022-04-12 | 兰州空间技术物理研究所 | A kind of getter with thin film coating and its preparation method and application |
| CN115261790A (en) * | 2022-08-15 | 2022-11-01 | 成都师范学院 | Nanostructured titanium nitride coating with high photo-thermal performance and preparation method thereof |
| CN115672254A (en) * | 2022-11-17 | 2023-02-03 | 北京锦正茂科技有限公司 | Activation-free gas adsorbent used in cryostat and preparation method thereof |
| EP4269788A1 (en) * | 2022-04-28 | 2023-11-01 | Honeywell International Inc. | Shape memory alloy enclosure for non-evaporable getters |
| CN117431511A (en) * | 2023-10-25 | 2024-01-23 | 上海晶维材料科技有限公司 | Multi-element alloy target material, multi-element alloy film getter and preparation method thereof |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63182283A (en) * | 1986-12-22 | 1988-07-27 | サエス・ゲテルス・ソチエタ・ペル・アチオニ | Ceramic supporter-mounted non-volatile getter equipment and manufacture |
| CN1143686A (en) * | 1996-06-21 | 1997-02-26 | 吕镇和 | Multielement non-evapotranspiation type low-temp activation Zr base gas-absorber alloy and producing method thereof |
| CN1198475A (en) * | 1997-04-03 | 1998-11-11 | 工程吸气公司 | Non-evaporable getter alloys |
| CN1210618A (en) * | 1996-02-09 | 1999-03-10 | 工程吸气公司 | Comibination of materials for low temperature triggering of activation of getter materials and getter devices containing the same |
| CN1572898A (en) * | 2003-06-11 | 2005-02-02 | 工程吸气公司 | Non-evaporable getter multilayer deposits obtained by cathodic deposition and process for their manufacturing |
| CN1681952A (en) * | 2002-09-13 | 2005-10-12 | 工程吸气公司 | Non-evaporable getter compositions reactivatable at low temperatures after exposure to reactive gases at elevated temperatures |
| CN1846012A (en) * | 2003-11-14 | 2006-10-11 | 工程吸气公司 | Method of making a device whose operation requires a non-evaporable getter material |
| CN102758101A (en) * | 2012-08-07 | 2012-10-31 | 南京盖特电子有限公司 | Non-evaporable type low-temperature activating zirconium-based getter alloy and preparation process thereof |
| CN103843103A (en) * | 2011-10-14 | 2014-06-04 | 工程吸气公司 | Non-evaporable getter compositions which can be reactivated at low temperature after exposure to reactive gases at a higher temperature |
| CN104743502A (en) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | MEMS component with composite getter layer and preparation method thereof |
| CN106115615A (en) * | 2016-08-17 | 2016-11-16 | 安徽北方芯动联科微系统技术有限公司 | There is MEMS chip and the wafer-level encapsulation method thereof of getter |
| CN108249386A (en) * | 2018-01-23 | 2018-07-06 | 苏州大学 | The controllable non-evaporable film getter of activationary temperature and its application |
| CN109082636A (en) * | 2018-07-23 | 2018-12-25 | 西安交通大学 | A kind of preparation method of low secondary electron yield nonevaporable getter film |
-
2019
- 2019-01-25 CN CN201910072069.8A patent/CN109680249A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63182283A (en) * | 1986-12-22 | 1988-07-27 | サエス・ゲテルス・ソチエタ・ペル・アチオニ | Ceramic supporter-mounted non-volatile getter equipment and manufacture |
| CN1210618A (en) * | 1996-02-09 | 1999-03-10 | 工程吸气公司 | Comibination of materials for low temperature triggering of activation of getter materials and getter devices containing the same |
| CN1143686A (en) * | 1996-06-21 | 1997-02-26 | 吕镇和 | Multielement non-evapotranspiation type low-temp activation Zr base gas-absorber alloy and producing method thereof |
| CN1198475A (en) * | 1997-04-03 | 1998-11-11 | 工程吸气公司 | Non-evaporable getter alloys |
| CN1681952A (en) * | 2002-09-13 | 2005-10-12 | 工程吸气公司 | Non-evaporable getter compositions reactivatable at low temperatures after exposure to reactive gases at elevated temperatures |
| CN1572898A (en) * | 2003-06-11 | 2005-02-02 | 工程吸气公司 | Non-evaporable getter multilayer deposits obtained by cathodic deposition and process for their manufacturing |
| CN1846012A (en) * | 2003-11-14 | 2006-10-11 | 工程吸气公司 | Method of making a device whose operation requires a non-evaporable getter material |
| CN103843103A (en) * | 2011-10-14 | 2014-06-04 | 工程吸气公司 | Non-evaporable getter compositions which can be reactivated at low temperature after exposure to reactive gases at a higher temperature |
| CN102758101A (en) * | 2012-08-07 | 2012-10-31 | 南京盖特电子有限公司 | Non-evaporable type low-temperature activating zirconium-based getter alloy and preparation process thereof |
| CN104743502A (en) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | MEMS component with composite getter layer and preparation method thereof |
| CN106115615A (en) * | 2016-08-17 | 2016-11-16 | 安徽北方芯动联科微系统技术有限公司 | There is MEMS chip and the wafer-level encapsulation method thereof of getter |
| CN108249386A (en) * | 2018-01-23 | 2018-07-06 | 苏州大学 | The controllable non-evaporable film getter of activationary temperature and its application |
| CN109082636A (en) * | 2018-07-23 | 2018-12-25 | 西安交通大学 | A kind of preparation method of low secondary electron yield nonevaporable getter film |
Non-Patent Citations (2)
| Title |
|---|
| 卜继国等: ""非蒸散型薄膜吸气材料研究进展"", 《真空科学与技术学报》 * |
| 王晓冬等: "《真空技术》", 30 September 2006 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110863228A (en) * | 2019-11-29 | 2020-03-06 | 中山凯旋真空科技股份有限公司 | Titanium dioxide nanotube-based getter film and preparation method thereof |
| CN110863228B (en) * | 2019-11-29 | 2021-08-10 | 中山凯旋真空科技股份有限公司 | Titanium dioxide nanotube-based getter film and preparation method thereof |
| CN112973617A (en) * | 2019-12-12 | 2021-06-18 | 有研工程技术研究院有限公司 | Ti film getter and preparation method thereof |
| CN112144030A (en) * | 2020-09-16 | 2020-12-29 | 上海晶维材料科技有限公司 | Titanium-based rare earth alloy target and preparation method thereof |
| CN112176301A (en) * | 2020-09-16 | 2021-01-05 | 上海晶维材料科技有限公司 | High-performance zirconium-based rare earth alloy target and preparation method thereof |
| CN112342508B (en) * | 2020-09-25 | 2023-10-20 | 富联裕展科技(深圳)有限公司 | Metal product and preparation method thereof, metal complex and preparation method thereof |
| CN112342508A (en) * | 2020-09-25 | 2021-02-09 | 深圳市裕展精密科技有限公司 | Metal product and preparation method thereof, and metal composite and preparation method thereof |
| CN112626460A (en) * | 2020-11-23 | 2021-04-09 | 上海晶维材料科技有限公司 | High-performance Ti-Co-RE target material and preparation method of high-suction-capacity film getter |
| CN113061854A (en) * | 2021-03-19 | 2021-07-02 | 上海松尚国际贸易有限公司 | Method for preparing getter by utilizing AMAT PVD cavity and thin film getter thereof |
| CN113621851A (en) * | 2021-07-15 | 2021-11-09 | 上海晶维材料科技有限公司 | High-performance film getter and application thereof |
| CN114318233A (en) * | 2021-12-10 | 2022-04-12 | 兰州空间技术物理研究所 | A kind of getter with thin film coating and its preparation method and application |
| EP4269788A1 (en) * | 2022-04-28 | 2023-11-01 | Honeywell International Inc. | Shape memory alloy enclosure for non-evaporable getters |
| CN115261790A (en) * | 2022-08-15 | 2022-11-01 | 成都师范学院 | Nanostructured titanium nitride coating with high photo-thermal performance and preparation method thereof |
| CN115672254A (en) * | 2022-11-17 | 2023-02-03 | 北京锦正茂科技有限公司 | Activation-free gas adsorbent used in cryostat and preparation method thereof |
| CN117431511A (en) * | 2023-10-25 | 2024-01-23 | 上海晶维材料科技有限公司 | Multi-element alloy target material, multi-element alloy film getter and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109680249A (en) | Non-evaporable film getter and preparation method thereof | |
| CN108249386B (en) | Activation temperature controllable non-evaporable film getter and application thereof | |
| KR100611134B1 (en) | Supports for microelectronic, microoptoelectronic or micromechanical devices | |
| US8039285B2 (en) | Thin film getter protection | |
| JP5701773B2 (en) | Method for forming micro surface structure, method for manufacturing micro electro mechanical member, micro surface structure, and micro electro mechanical member having the structure | |
| US8956958B2 (en) | Method for the production of a substrate comprising embedded layers of getter material | |
| US7732902B2 (en) | Semiconductor package with getter formed over an irregular structure | |
| JP2005510041A5 (en) | ||
| US8981544B2 (en) | Packaging structure of a micro-device including a getter material | |
| TW200900238A (en) | Air-stable alkali or alkaline-earth metal dispensers | |
| JP2005513758A (en) | Support with integrated deposits of gas-absorbing material for the production of microelectronic, microoptoelectronic or micromechanical devices | |
| JP2019047125A (en) | Getter structure and method of forming the structure | |
| Sparks et al. | Reliable vacuum packaging using nanogetters and glass frit bonding | |
| CN114203744B (en) | An uncooled infrared detector with a getter suspended in the air and a method for making the same | |
| CN107963607A (en) | A kind of all standing getter wafer scale electronic component and its method for packing | |
| Lemettre et al. | Zr-Ti getter film integration in MEMS vacuum packaging | |
| CN112384468A (en) | Hermetic package comprising a getter, component comprising such a hermetic package and related manufacturing method | |
| JPH08330607A (en) | Small semiconductor device and small infrared sensor | |
| KR20230006453A (en) | Microelectromechanical system and manufacturing method thereof | |
| US9240362B2 (en) | Layer arrangement and a wafer level package comprising the layer arrangement | |
| WO2005047558A2 (en) | Process for manufacturing devices which require a non evaporable getter material for their working | |
| Anderson et al. | 14 Advances in WLCSP Technologies for Growing Market Needs | |
| US10221063B2 (en) | Multi-level getter structure and encapsulation structure comprising such a multi-level getter structure | |
| CN117163917A (en) | MEMS vacuum packaging structure and packaging method | |
| CN100544950C (en) | Thin-film gas-absorbing element of multilayer film structure and methods of making and using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190426 |