CN112099315B - Photoetching equipment, control method and device thereof and storage medium - Google Patents

Photoetching equipment, control method and device thereof and storage medium Download PDF

Info

Publication number
CN112099315B
CN112099315B CN201910522070.6A CN201910522070A CN112099315B CN 112099315 B CN112099315 B CN 112099315B CN 201910522070 A CN201910522070 A CN 201910522070A CN 112099315 B CN112099315 B CN 112099315B
Authority
CN
China
Prior art keywords
motion
exposure area
exposure
stage
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910522070.6A
Other languages
Chinese (zh)
Other versions
CN112099315A (en
Inventor
周畅
朱岳彬
陈超
廖飞红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to CN201910522070.6A priority Critical patent/CN112099315B/en
Priority to TW108132095A priority patent/TWI728458B/en
Priority to KR1020190120836A priority patent/KR102327697B1/en
Publication of CN112099315A publication Critical patent/CN112099315A/en
Application granted granted Critical
Publication of CN112099315B publication Critical patent/CN112099315B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment

Abstract

The embodiment of the invention discloses a photoetching device, a control method and a control device thereof and a storage medium, wherein the photoetching device comprises two motion tables; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control method of the photoetching equipment comprises the following steps: the method comprises the steps of controlling one motion platform to perform a first procedure in an exposure area, controlling the other motion platform to perform a second procedure in a non-exposure area, and when the first procedure is completed, enabling the motion platform in the non-exposure area to move to a junction of the non-exposure area and the exposure area, wherein the first procedure comprises exposure, and is longer in exposure time, so that the speed of the motion platform in the second procedure in the non-exposure area to move to the exposure area is lower, and further vibration of the photoetching equipment and a guide rail for bearing the two motion platforms can not be caused, crosstalk can not be caused to the motion platform which is being exposed, the method is favorable for improving the exposure precision, and the yield of the photoetching equipment can be improved.

Description

Photoetching equipment, control method and device thereof and storage medium
Technical Field
The embodiment of the invention relates to the technical field of photoetching equipment, in particular to photoetching equipment, a control method and a control device of the photoetching equipment and a storage medium.
Background
With the development of the lithography technology, the lithography machines of the large generation double motion tables are more and more widely applied.
The large-generation photoetching machine can be used for exposing a substrate with a large size, but the large size of the substrate causes large inertia when the moving platform bears the substrate to move, and the moving platform can bring vibration of photoetching machine equipment when moving at a high speed, so that crosstalk occurs between the two moving platforms, and the exposure precision is influenced.
Disclosure of Invention
The invention provides a photoetching device, a control method and a control device thereof and a storage medium, which are used for improving the yield of the photoetching device, eliminating crosstalk between two motion tables of the photoetching device and improving exposure performance.
In a first aspect, embodiments of the present invention provide a method for controlling a lithographic apparatus, the lithographic apparatus comprising two motion stages; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control method of the photoetching equipment comprises the following steps:
and controlling one motion platform to perform a second procedure in the non-exposure area in the process of performing the first procedure in the exposure area, and when the first procedure is completed, moving the motion platform in the non-exposure area to the junction of the non-exposure area and the exposure area, wherein the first procedure comprises exposure.
The photoetching equipment comprises a first moving table and a second moving table, wherein the non-exposure area comprises a first non-exposure area and a second non-exposure area, and the first non-exposure area, the exposure area and the second non-exposure area are sequentially arranged along a first direction; the working area of the first motion platform comprises an exposure area and a first non-exposure area, and the working area of the second motion platform comprises an exposure area and a second non-exposure area;
the control of one motion platform in the exposure area for the first process and the control of the other motion platform in the non-exposure area for the second process comprise:
and controlling the second motion platform to perform the second procedure in the second non-exposure area in the process of controlling the first motion platform to perform the first procedure in the exposure area.
Wherein, in the process of controlling the first motion platform to perform the first procedure in the exposure area, the step of controlling the second motion platform to perform the second procedure in the second non-exposure area further comprises the following steps:
and controlling the first motion platform to perform the second procedure in the first non-exposure area in the process of controlling the second motion platform to perform the first procedure in the exposure area.
The first procedure comprises the steps of sequentially executing leveling and focusing, mask alignment and exposure; the second process includes sequentially performing the material transfer and the substrate alignment.
The sum of the time for leveling and focusing of the moving platform in the first process in the exposure area is equal to the time for transferring materials by the moving platform in the second process in the non-exposure area;
the sum of the time taken for the mask alignment of the moving stage in the first step and the exposure in the exposure region is equal to the time taken for the substrate alignment of the moving stage in the second step in the non-exposure region.
The photoetching equipment comprises a substrate alignment mark detection sensor, wherein the substrate alignment mark detection sensor is arranged in a non-exposure area, and the distance between the substrate alignment mark detection sensor and the boundary of the exposure area and the non-exposure area is greater than or equal to the length of the moving platform in the first direction.
Wherein, in the first direction, the distance between the substrate alignment mark detection sensor and the boundary of the exposure area and the non-exposure area is equal to the length of the motion stage in the first direction.
One side of any one motion table close to the other motion table comprises a substrate alignment mark, and the material carried by the motion table comprises n pairs of material alignment marks; n sets gradually material alignment mark and base plate alignment mark along first direction equidistance, controls another motion platform and carries out the second process in the non-exposure area, includes:
and after the substrate alignment mark of the motion platform is controlled to be aligned with the substrate alignment mark detection sensor, the motion platform is controlled to perform stepping motion towards the exposure area for n times along the first direction, wherein the motion platform moves at a constant speed in each stepping process, and n is more than or equal to 1.
The control method of the lithographic equipment further comprises a guide rail which is arranged along the first direction and used for bearing the first moving table and the second moving table, a first moving slide block is arranged between the guide rail and the first moving table, a second moving slide block is arranged between the guide rail and the second moving table, a distance sensor is arranged on one side, close to the second moving table, of the first moving slide block or one side, close to the first moving table, of the second moving slide block, and the control method of the lithographic equipment further comprises the following steps:
and when the distance sensor detects that the distance between the first moving table and the second moving table is smaller than a preset distance threshold value, controlling the first moving table and/or the second moving table to stop moving.
In a second aspect, an embodiment of the present invention further provides a control apparatus for a lithographic apparatus, where the lithographic apparatus includes two motion stages; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control device of the photoetching equipment comprises a control module;
the control module is used for controlling one motion platform to perform a second procedure in the non-exposure area in the process of performing a first procedure in the exposure area, and when the first procedure is completed, the motion platform in the non-exposure area moves to the junction of the non-exposure area and the exposure area, and the first procedure comprises exposure.
In a third aspect, an embodiment of the present invention further provides a lithographic apparatus, and the control device provided in the second aspect further includes two motion stages, and a working area of the motion stage includes an exposure area and a non-exposure area.
The photoetching equipment further comprises a substrate alignment mark detection sensor, the substrate alignment mark detection sensor is arranged in the non-exposure area, and the distance between the substrate alignment mark detection sensor and the boundary of the exposure area and the non-exposure area in the first direction is larger than or equal to the length of the moving platform in the first direction.
Wherein, in the first direction, the distance between the substrate alignment mark detection sensor and the boundary of the exposure region and the non-exposure region is greater than or equal to the length of the motion stage in the first direction.
One side of any one motion table close to the other motion table comprises a substrate alignment mark, and the material carried by the motion table comprises n pairs of material alignment marks; the n pairs of material alignment marks and the substrate alignment marks are sequentially arranged at equal intervals along the first direction, wherein n is larger than or equal to 1.
In a fourth aspect, embodiments of the present invention also provide a computer-readable storage medium, on which a computer program is stored, wherein the program, when executed by a processor, implements the method for controlling a lithographic apparatus provided in the first aspect.
According to the photoetching equipment and the control method, device and storage medium thereof provided by the embodiment of the invention, one motion platform is controlled to carry out the second procedure in the non-exposure area in the process of carrying out the first procedure in the exposure area, and when the first procedure is finished, the motion platform in the non-exposure area moves to the junction of the non-exposure area and the exposure area, and the first procedure comprises exposure. Because of the required time of exposure is usually longer, and then can make the time that the motion platform that carries out the second process in non-exposure area accomplished the second process longer, and then make the speed that the motion platform that carries out the second process in non-exposure area moves to the exposure area slower, and then can not cause lithography apparatus and the vibration of the guide rail that bears two motion platforms, then can not cause the motion platform of exposing to cross talk, be favorable to improving the exposure precision. And when the first process and the second process are completed simultaneously, the motion platform of the non-exposure area moves to the junction of the non-exposure area and the exposure area, so that the motion platform can realize seamless connection of the first process and the second process, and the first process of one motion platform in the exposure area and the second process of the other motion platform in the non-exposure area are simultaneously carried out, which is beneficial to improving the yield of the photoetching equipment.
Drawings
FIG. 1 is a flow chart of a method of controlling a lithographic apparatus according to an embodiment of the invention;
FIG. 2 is a schematic view of a motion stage and its working area of a lithographic apparatus according to an embodiment of the invention;
FIG. 3 is a top view of a lithographic apparatus according to an embodiment of the present invention;
FIG. 4 is a graph showing the timing of the first and second processes performed by the two motion stages according to the embodiment of the present invention;
FIG. 5 depicts a schematic structural diagram of another lithographic apparatus according to an embodiment of the invention;
FIG. 6 is a flowchart of another method of controlling a lithographic apparatus according to an embodiment of the invention;
FIG. 7 is a block diagram of a control apparatus of a lithographic apparatus according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
In order to improve the overall yield of the photoetching equipment, the photoetching equipment with the double moving tables is more and more widely applied. However, for large generation (for example, generation 6, generation 8.5) dual-motion stage lithography machines, the size of the motion stage is large, and two motion stages move on the same guide rail, so that when one motion stage moves at a high speed, disturbance is caused to the other motion stage. In the existing control method for the dual-motion-table lithography machine, when one motion table is exposed in an exposure area, the other motion table is used for aligning a substrate in a non-exposure area at a high speed, so that great disturbance is brought to the motion table which is exposed, and the exposure precision is finally influenced.
In view of the above problems, embodiments of the present invention provide a method for controlling a lithographic apparatus. Fig. 1 is a flowchart of a control method for a lithographic apparatus according to an embodiment of the present invention, where the control method is applicable to control of a lithographic apparatus having a large-sized dual-motion stage, and the method can be executed by a control device of the lithographic apparatus, and the control device of the lithographic apparatus can be implemented in software and/or hardware, and the lithographic apparatus includes two motion stages; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control method of the photoetching equipment comprises the following steps:
step 110, controlling one motion stage to perform a first process in the exposure area, and controlling the other motion stage to perform a second process in the non-exposure area, wherein when the first process is completed, the motion stage in the non-exposure area moves to the junction of the non-exposure area and the exposure area, and the first process comprises exposure.
Specifically, the motion table of the lithographic apparatus is used for carrying the material and the material is carried to move in the exposure area and the non-exposure area. The photoetching equipment comprises two motion tables, and when one motion table is controlled to perform a first procedure in an exposure area, the other motion table is controlled to perform a second procedure in a non-exposure area. The first process comprises exposure, the required time of the exposure is usually longer, the first process of a moving platform in an exposure area and the second process of another moving platform in a non-exposure area are completed simultaneously, the time for completing the second process by the moving platform which performs the second process in the non-exposure area can be longer, the speed of the moving platform which performs the second process in the non-exposure area to the exposure area is slower, the vibration of the photoetching equipment and the guide rails which bear the two moving platforms can not be caused, the crosstalk to the moving platform which is being exposed can not be caused, and the improvement of the exposure precision is facilitated.
When the first process carried out by one motion platform in the exposure area and the second process carried out by the other motion platform in the non-exposure area are simultaneously completed, the motion platform in the non-exposure area moves to the junction of the non-exposure area and the exposure area, so that the motion platform completing the second process in the non-exposure area can directly enter the exposure area to carry out the first process, and the motion platform completing the first process in the exposure area can directly enter the non-exposure area to carry out the second process, thereby realizing the seamless connection of the first process and the second process for each motion platform; for the two motion tables, the first process of one motion table in the exposure area and the process of the other motion table in the non-exposure area are carried out simultaneously, which is beneficial to improving the yield of the photoetching equipment.
In the method for controlling a lithography apparatus provided in an embodiment of the present invention, one motion stage is controlled to perform a first process in an exposure region, and another motion stage is controlled to perform a second process in a non-exposure region. Because of the required time of exposure is usually longer, and then can make the time that the motion platform that carries out the second process in non-exposure area accomplished the second process longer, and then make the speed that the motion platform that carries out the second process in non-exposure area moves to the exposure area slower, and then can not cause lithography apparatus and the vibration of the guide rail that bears two motion platforms, then can not cause the motion platform of exposing to cross talk, be favorable to improving the exposure precision. And when the first process and the second process are completed simultaneously, the motion platform of the non-exposure area moves to the junction of the non-exposure area and the exposure area, so that the motion platform can realize seamless connection of the first process and the second process, and the first process of one motion platform in the exposure area and the second process of the other motion platform in the non-exposure area are simultaneously carried out, which is beneficial to improving the yield of the photoetching equipment.
FIG. 2 is a schematic diagram of a motion stage and its working area of a lithographic apparatus according to an embodiment of the invention. Referring to fig. 2, on the basis of the above scheme, optionally, the lithographic apparatus includes a first motion stage 10 and a second motion stage 20, the non-exposure region includes a first non-exposure region B1 and a second non-exposure region B2, and the first non-exposure region B1, the exposure region, and the second non-exposure region B2 are sequentially arranged in a first direction; the working area of the first motion stage 10 includes an exposure area a and a first non-exposure area B1, and the working area of the second motion stage 20 includes an exposure area a and a second non-exposure area B2;
the control of one motion platform in the exposure area for the first process and the control of the other motion platform in the non-exposure area for the second process comprise:
in the step 111, the first motion stage 10 is controlled to perform the first process in the exposure region a, and the second motion stage 20 is controlled to perform the second process in the second non-exposure region B2.
Specifically, when the first motion stage 10 is controlled to perform the first process in the exposure area, the second motion stage 20 is controlled to perform the second process in the second non-exposure area B2, so that the first process of the first motion stage 10 and the second process of the second motion stage 20 are performed simultaneously, and compared with the control of a single motion stage lithographic apparatus, the time for performing the second process by the second motion stage 20 can be saved, which is beneficial to improving the yield of the lithographic apparatus.
The first motion table 10 and the second motion table 20 generally move on the same guide rail, the working area of the first motion table 10 is provided to include an exposure area a and a first non-exposure area B1, the working area of the second motion table 20 includes an exposure area a and a second non-exposure area B2, and thus when the first motion table 10 is controlled to complete a first process in the exposure area, the first non-exposure area B1 is entered along a direction opposite to a first direction, and simultaneously the second motion table 20 is controlled to enter the exposure area a along a direction opposite to the first direction, so that the first motion table 10 and the second motion table 20 do not collide with each other, and the safety and reliability of the lithography apparatus are ensured.
On the basis of the above scheme, optionally, controlling the first motion stage 10 to perform the first process in the exposure area a, controlling the second motion stage 20 to perform the second process in the second non-exposure area B2 further includes:
in the step 112, the second motion stage 20 is controlled to perform the first process in the exposure area a, and the first motion stage 10 is controlled to perform the second process in the first non-exposure area B1.
Specifically, after the first process performed by the first motion stage 10 in the exposure area a and the second process performed by the second motion stage 20 in the second non-exposure area B2 are simultaneously completed, the first motion stage 10 is controlled to enter the first non-exposure area B1 to perform the second process, and the second motion stage 20 is controlled to enter the exposure area a to perform the first process, that is, the second process of the first motion stage 10 and the first process of the second motion stage 20 are simultaneously performed.
On the basis of the above scheme, optionally, the first process includes sequentially performing leveling and focusing, mask alignment, and exposure; the second process includes sequentially performing the material transfer and the substrate alignment.
Specifically, when the motion stage performs the first process in the exposure area, the leveling and focusing and the mask alignment are performed or assisted, so that the effective performance of the subsequent exposure process is ensured. With continued reference to fig. 2, the lithographic apparatus further comprises a mask plate 30, the mask plate 30 comprises mask marks 31, the motion stage comprises a mask alignment mark detection sensor 32 and a mask alignment reference mark 33, and the mask alignment comprises the following steps:
alignment of the mask alignment mark inspection sensor 32 with the mask alignment reference mark 33;
the mask alignment mark checks alignment of the sensor 32 with the mask mark 31.
In the second process, the material handing-over includes unloading the material and going up the material, and the process of handing-over the material is also counted into in this embodiment to the motion platform homing, and the motion platform homing includes the process that the motion platform entered into non-exposure area to the motion platform from the exposure area and moved the position of material about to. Substrate alignment includes alignment of the motion stage itself and alignment of the material carried by the motion stage.
On the basis of the scheme, optionally, the time for leveling and focusing the moving platform in the first process in the exposure area is equal to the time for transferring materials by the moving platform in the second process in the non-exposure area;
the sum of the time used for the mask alignment and the exposure of the moving platform in the first process in the exposure area is equal to the time used for the substrate alignment of the moving platform in the second process in the non-exposure area, so that the total time of the first process and the second process can be ensured to be equal. And because the exposure time is usually longer, the sum of the time used for carrying out the mask alignment and the exposure of the moving platform in the first process in the exposure area is equal to the time used for carrying out the substrate alignment of the moving platform in the second process in the non-exposure area, so that the time for carrying out the substrate alignment of the moving platform in the non-exposure area is longer, and further in the substrate alignment process, the moving speed of the moving platform is slower, so that the moving platform is not easy to cause disturbance to the moving platform which is carrying out the exposure in the exposure area, and further the exposure precision can be further improved.
With continued reference to fig. 2, based on the above technical solution, optionally, the lithographic apparatus includes a substrate alignment mark detection sensor 50, the substrate alignment mark detection sensor 50 is disposed in the non-exposure area, and a distance d between the substrate alignment mark detection sensor 50 and a boundary between the exposure area and the non-exposure area is greater than or equal to a length c of the motion stage in the first direction x. Wherein the non-exposed region includes a first non-exposed region B1 and a second non-exposed region B2.
Specifically, the surfaces of the motion table and the material are usually provided with alignment marks, and the substrate alignment mark detection sensor can complete alignment of the motion table and the material, i.e. substrate alignment, by detecting the alignment marks on the surfaces of the motion table and the material. In the first direction x, the distance d between the substrate alignment mark detection sensor and the boundary of the exposure area and the non-exposure area is greater than or equal to the length c of the moving table in the first direction x, so that the moving table can be ensured not to enter the exposure area after the substrate alignment is completed, and further the two moving tables can be ensured not to collide with each other, and the reliability of the photoetching equipment is ensured. Among them, the substrate alignment mark detection sensor 50 may be an alignment image pickup device. In order to ensure that when the motion platform for performing the first process in the exposure area and the motion platform for performing the second process in the non-exposure area simultaneously complete the corresponding processes, the motion platform in the non-exposure area reaches the boundary between the non-exposure area and the exposure area, and when the distance between the substrate alignment mark detection sensor and the boundaries between the exposure area and the non-exposure area is greater than the length of the motion platform in the first direction, the motion platform in the non-exposure area cannot reach the boundary between the non-exposure area and the exposure area after completing the substrate alignment, so the second process also comprises the motion of the motion platform towards the boundary between the exposure area and the non-exposure area after the substrate is aligned.
On the basis of the above-described aspect, optionally, in the first direction x, the distance d of the substrate alignment mark detection sensor 50 from the boundary of the exposure area and the non-exposure area is equal to the length c of the moving stage in the first direction.
Specifically, in the first direction x, the distance d between the substrate alignment mark detection sensor 50 and the boundary between the exposure area and the non-exposure area is equal to the length c of the motion stage in the first direction, so that the motion stage can be stopped at the boundary between the exposure area and the non-exposure area after the substrate alignment is completed in the non-exposure area, and because the first process performed by one motion stage in the exposure area and the second process performed by the other motion stage in the non-exposure area are completed simultaneously, the motion stage performing the second process in the non-exposure area can directly enter the exposure area for exposure after the substrate alignment is completed, the seamless connection between the second process performed by the motion stage in the non-exposure area and the first process performed in the exposure area is realized, and the yield is further improved.
Fig. 3 is a top view of a lithographic apparatus according to an embodiment of the present invention, and referring to fig. 2 and 3, on the basis of the above solution, optionally, one side of any one motion stage close to another motion stage includes a substrate alignment mark 60, and the material 40 carried by the motion stage includes n pairs of material alignment marks 70; n pairs of material alignment marks 70 and substrate alignment marks 60 are arranged in sequence at equal intervals along the first direction x, and another motion stage is controlled to perform a second procedure in the non-exposure area, including:
after the substrate alignment mark 60 of the motion platform is controlled to be aligned with the substrate alignment mark detection sensor 50, the motion platform is controlled to perform stepping motion towards the exposure area for n times along the first direction, wherein the motion platform moves at a constant speed in each stepping process, and n is more than or equal to 1.
Specifically, a pair of substrate alignment marks 60 is provided on one side of any one of the motion stages adjacent to the other motion stage, and the substrate alignment mark detection sensor 50 can perform motion stage alignment by detecting the substrate alignment marks 60 on the motion stages. The surface of the material borne by the moving platform is provided with n pairs of material alignment marks which are sequentially arranged along the first direction at equal intervals, and the substrate alignment mark detection sensor sequentially detects each pair of material alignment marks to align the material along with the step movement of the moving platform from the non-exposure area to the exposure area. Referring to fig. 3, a detection sensor 80 may be further disposed at the boundary between the exposure region and the non-exposure region for detecting whether the motion stage reaches the boundary between the exposure region and the non-exposure region.
Fig. 4 is a time distribution diagram of two motion stages for performing a first process and a second process according to an embodiment of the present invention. Referring to fig. 3 and 4, the length c of the moving stage in the first direction is equal to 1.8 m, the material surface is provided with 10 to illustrate the material alignment mark, the time for the moving stage (moving stage 2 in fig. 4) performing the second process in the non-exposure region to transfer the material, the time for the moving stage (moving stage 1 in fig. 4) performing the first process in the exposure region to perform leveling and focusing is t1, the time for the moving stage performing the first process in the exposure region to perform mask alignment is t2, the time for the moving stage performing the first process in the exposure region to perform exposure is t3, the time for the moving stage performing the second process in the non-exposure region to perform substrate alignment is t2+ t3, the time for each stepping movement to the exposure region is (t2+ t3)/10, and the path for each stepping movement is 1.8/10 to 0.18m, the speed of each step movement is 1.8/(t2+ t 3). When the motion platform for carrying out the second procedure in the non-exposure area carries out substrate alignment, the motion platform is controlled to carry out stepping motion to the exposure area for n times, wherein the motion platform moves at a constant speed in each stepping process, and the time for carrying out substrate alignment on the motion platform for carrying out the second procedure in the non-exposure area is equal to the sum of the time for carrying out mask alignment and exposure on the motion platform for carrying out the first procedure in the exposure area, so that the speed of stepping motion of the motion platform to the exposure area is slow, and the motion platform moves at a constant speed, therefore, the vibration generated by a guide rail generated by the motion platform for carrying out substrate alignment can be reduced or even eliminated, and the motion platform which is being exposed can not be disturbed, and the yield of the photoetching equipment is improved, and the exposure precision is improved.
FIG. 5 is a schematic diagram of another lithographic apparatus according to an embodiment of the invention, and FIG. 6 is a flowchart of a method for controlling another lithographic apparatus according to an embodiment of the invention. Referring to fig. 5, on the basis of the above scheme, optionally, the lithographic apparatus further includes a guide rail 90 disposed along the first direction x and used for carrying the first motion stage 10 and the second motion stage 20, a first motion slider 100 is disposed between the guide rail 90 and the first motion stage 10, a second motion slider 200 is disposed between the guide rail 90 and the second motion stage 20, a distance sensor 101 is disposed on a side of the first motion slider 100 close to the second motion stage 20 or a side of the second motion slider 200 close to the first motion stage 10, and referring to fig. 6, the control method of the lithographic apparatus includes:
step 210, controlling one motion stage to perform a first process in the exposure region, and controlling the other motion stage to perform a second process in the non-exposure region, wherein when the first process is completed, the motion stage in the non-exposure region moves to the boundary between the non-exposure region and the exposure region, and the first process comprises exposure.
And step 220, controlling the first motion table 10 and/or the second motion table 20 to stop moving when the distance sensor 101 detects that the distance between the first motion table 10 and the second motion table 20 is smaller than a preset distance threshold.
Specifically, the first moving block 100 drives the first moving stage 10 to move on the guide rail 90, and the second moving block 200 drives the second moving stage 20 to move on the guide rail 90. By arranging the distance sensor 101 at one side of the first moving slider 100 close to the second moving table 20 or one side of the second moving slider 200 close to the first moving table 10, and controlling the first moving table 10 and/or the second moving table 20 to stop moving when the distance sensor 101 detects that the distance between the first moving table 10 and the second moving table 20 is smaller than a preset distance threshold, the first moving table 10 and the second moving table 20 can be prevented from colliding, and the safety and the reliability of the lithographic apparatus can be ensured.
An embodiment of the present invention further provides a control device of a lithographic apparatus, where the control device can execute the control method of the lithographic apparatus provided in any embodiment of the present invention, and fig. 7 is a block diagram of the control device of the lithographic apparatus provided in the embodiment of the present invention, where the lithographic apparatus includes two motion stages; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control device of the photoetching equipment comprises a control module 310; the control module 310 is used for controlling one motion stage to perform a second process in the non-exposure region during the process of performing the first process in the exposure region, and when the first process is completed, the motion stage in the non-exposure region moves to the boundary between the non-exposure region and the exposure region, and the first process includes exposure.
In the control device of the lithography apparatus provided in the embodiment of the present invention, the control module controls one motion stage to perform the first process in the exposure region, and controls the other motion stage to perform the second process in the non-exposure region, and when the first process and the second process are completed simultaneously, the motion stage in the non-exposure region moves to the boundary between the non-exposure region and the exposure region, and the first process includes exposure. The time required by exposure is usually longer, so that the speed of the motion platform which carries out the second procedure in the non-exposure area to the motion of the exposure area is lower, the vibration of the photoetching equipment and the guide rails which bear the two motion platforms can not be caused, the crosstalk to the motion platform which is being exposed can not be caused, the improvement of the exposure precision is facilitated, and the first procedure of one motion platform in the exposure area and the second procedure of the other motion platform in the non-exposure area are simultaneously carried out, so that the improvement of the yield of the photoetching equipment is facilitated.
On the basis of the above scheme, optionally, the lithographic apparatus includes a first motion stage and a second motion stage, the non-exposure region includes a first non-exposure region and a second non-exposure region, and the first non-exposure region, the exposure region, and the second non-exposure region are sequentially arranged along the first direction; the working area of the first motion platform comprises an exposure area and a first non-exposure area, and the working area of the second motion platform comprises an exposure area and a second non-exposure area;
the control module comprises a first control unit for controlling the first motion platform to perform the first procedure in the exposure area and controlling the second motion platform to perform the second procedure in the second non-exposure area.
Optionally, the control module further includes a second control unit, configured to, during the process of controlling the first motion stage to perform the first process in the exposure region, control the second motion stage to perform the second process in the second non-exposure region after:
and controlling the first motion platform to perform the second procedure in the first non-exposure area in the process of controlling the second motion platform to perform the first procedure in the exposure area.
On the basis of the technical scheme, optionally, the sum of the time for leveling and focusing the moving table in the first process in the exposure area and the time for aligning the mask is equal to the time for transferring materials by the moving table in the second process in the non-exposure area;
the sum of the time used for the mask alignment and the exposure of the moving stage in the first step in the exposure region is equal to the time used for the substrate alignment of the moving stage in the second step in the non-exposure region;
in the first direction, the distance between the substrate alignment mark detection sensor and the boundary between the exposure region and the non-exposure region is equal to the length of the motion stage in the first direction; one side of the motion platform, which is close to the boundary of the exposure area and the non-exposure area, comprises a substrate alignment mark, and the material borne by the motion platform comprises n pairs of material alignment marks; n pairs of material alignment marks and substrate alignment marks are sequentially arranged at equal intervals along the first direction, and the control module is specifically used for controlling the other motion platform to perform the second procedure in the non-exposure area,
and after the substrate alignment mark of the motion platform is controlled to be aligned with the substrate alignment camera device, the motion platform is controlled to perform stepping motion towards the exposure area for n times along the first direction, wherein the motion platform moves at a constant speed in each stepping process.
The control device of the lithography equipment provided by the embodiment of the invention can execute the control method of the lithography equipment provided by any embodiment of the invention, and has corresponding functional modules and beneficial effects of the execution method.
An embodiment of the present invention further provides a lithographic apparatus, a schematic structural diagram of which may refer to fig. 2, where the lithographic apparatus includes the control device provided in any of the above embodiments, and further includes two motion stages, and a working area of the motion stage includes an exposure area and a non-exposure area.
In the lithography apparatus provided in the embodiment of the present invention, the control device controls one motion stage to perform the first process in the exposure region, and controls the other motion stage to perform the second process in the non-exposure region, and when the first process and the second process are completed simultaneously, the motion stage in the non-exposure region moves to the boundary between the non-exposure region and the exposure region, and the first process includes exposure. The time required by exposure is usually longer, so that the speed of the motion platform which carries out the second procedure in the non-exposure area to the motion of the exposure area is lower, the vibration of the photoetching equipment and the guide rails which bear the two motion platforms can not be caused, the crosstalk to the motion platform which is being exposed can not be caused, the improvement of the exposure precision is facilitated, and the first procedure of one motion platform in the exposure area and the second procedure of the other motion platform in the non-exposure area are simultaneously carried out, so that the improvement of the yield of the photoetching equipment is facilitated.
With continued reference to fig. 2, in addition to the above-described aspect, optionally, the lithographic apparatus further includes a substrate alignment mark detection sensor 50, the substrate alignment mark detection sensor 50 being disposed in the non-exposure region, and a distance between the substrate alignment mark detection sensor and a boundary between the exposure region and the non-exposure region in the first direction being greater than or equal to a length of the motion stage in the first direction.
On the basis of the above-described aspect, further, in the first direction, the distance of the substrate alignment mark detection sensor 50 from the boundary of the exposure region and the non-exposure region is greater than or equal to the length of the moving stage in the first direction.
On the basis of the technical scheme, one side of any one motion table close to the other motion table comprises a substrate alignment mark 60, and the material 40 carried by the motion table comprises n pairs of material alignment marks 70; the n pairs of material alignment marks 70 and the substrate alignment marks 60 are sequentially arranged at equal intervals along the first direction x, wherein n is larger than or equal to 1.
Embodiments of the present invention provide a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method of controlling a lithographic apparatus as provided by embodiments of the present invention:
and controlling one motion platform to perform a second procedure in the non-exposure area in the process of performing the first procedure in the exposure area, and when the first procedure is completed, moving the motion platform in the non-exposure area to the junction of the non-exposure area and the exposure area, wherein the first procedure comprises exposure.
Any combination of one or more computer-readable media may be employed. The computer readable medium may be a computer readable signal medium or a computer readable storage medium. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples (a non-exhaustive list) of the computer readable storage medium would include the following: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
A computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated data signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.
Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.
Computer program code for carrying out operations for aspects of the present invention may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C + + or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or devices as the present embodiment provides. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet service provider).
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (14)

1. A method of controlling a lithographic apparatus, characterized in that the lithographic apparatus comprises two motion stages; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control method of the photoetching equipment comprises the following steps:
controlling one motion platform to perform a second procedure in the non-exposure area in the process of controlling the other motion platform to perform a first procedure in the exposure area, and when the first procedure is completed, moving the motion platform in the non-exposure area to the boundary of the non-exposure area and the exposure area, wherein the first procedure comprises exposure;
one side of any one motion table close to the other motion table comprises a substrate alignment mark, and the material carried by the motion table comprises n pairs of material alignment marks; the n pairs of material alignment marks and the substrate alignment marks are sequentially arranged at equal intervals along a first direction, and the other motion table is controlled to perform a second procedure in the non-exposure area, wherein the second procedure comprises the following steps:
and after the substrate alignment mark of the motion platform is controlled to be aligned with the substrate alignment mark detection sensor, controlling the motion platform to perform stepping motion on the exposure area for n times along the first direction, wherein the motion platform moves at a constant speed in each stepping process, and n is more than or equal to 1.
2. The method of controlling a lithographic apparatus according to claim 1, wherein the lithographic apparatus comprises a first motion stage and a second motion stage, the non-exposure region comprises a first non-exposure region and a second non-exposure region, the first non-exposure region, the exposure region, and the second non-exposure region being arranged in order along a first direction; the working area of the first motion platform comprises an exposure area and a first non-exposure area, and the working area of the second motion platform comprises an exposure area and a second non-exposure area;
the step of controlling one motion platform to perform a first process in the exposure area and the step of controlling the other motion platform to perform a second process in the non-exposure area comprises the following steps:
and controlling the second motion platform to perform a second procedure in the second non-exposure area in the process of controlling the first motion platform to perform the first procedure in the exposure area.
3. The method of claim 2, wherein the controlling the first motion stage during the first process performed in the exposure area and the controlling the second motion stage after the second process performed in the second non-exposure area further comprises:
and controlling the first motion platform to perform a second procedure in the first non-exposure area in the process of controlling the second motion platform to perform the first procedure in the exposure area.
4. The method of controlling a lithographic apparatus according to claim 1, wherein the first process includes sequentially performing leveling focusing, mask alignment, and exposure; the second process includes sequentially performing the material transfer and the substrate alignment.
5. The method of claim 4, wherein the sum of the times for performing the first process stage leveling and focusing on the motion stage in the exposure area is equal to the time for transferring the material on the motion stage in the second process stage in the non-exposure area;
the sum of the time taken for the mask alignment and exposure of the moving stage in the first step in the exposure region is equal to the time taken for the substrate alignment of the moving stage in the second step in the non-exposure region.
6. The method of claim 4, wherein the apparatus comprises a substrate alignment mark detection sensor disposed in the non-exposure region, and a distance between the substrate alignment mark detection sensor and a boundary between the exposure region and the non-exposure region in the first direction is greater than or equal to a length of the motion stage in the first direction.
7. The method of claim 6, wherein the substrate alignment mark detection sensor is located at a distance from the boundary between the exposure region and the non-exposure region in the first direction equal to the length of the motion stage in the first direction.
8. The method of claim 2, further comprising a guide rail disposed along the first direction and carrying the first motion stage and the second motion stage, wherein a first motion slider is disposed between the guide rail and the first motion stage, and a second motion slider is disposed between the guide rail and the second motion stage, and a distance sensor is disposed on one side of the first motion slider close to the second motion stage or one side of the second motion slider close to the first motion stage, and the method further comprises:
and when the distance sensor detects that the distance between the first moving table and the second moving table is smaller than a preset distance threshold value, controlling the first moving table and/or the second moving table to stop moving.
9. A control device of a lithographic apparatus, characterized in that the lithographic apparatus comprises two motion stages; the working area of the motion platform comprises an exposure area and a non-exposure area, and the control device of the photoetching equipment comprises a control module;
the control module is used for controlling one motion platform to perform a second procedure in the non-exposure area in the process of performing a first procedure in the exposure area, and when the first procedure is completed, the motion platform in the non-exposure area moves to the junction of the non-exposure area and the exposure area, wherein the first procedure comprises exposure;
one side of any one motion table close to the other motion table comprises a substrate alignment mark, and the material carried by the motion table comprises n pairs of material alignment marks; the method is characterized in that n pairs of material alignment marks and the substrate alignment marks are sequentially arranged at equal intervals in a first direction, and the other motion platform is controlled to perform a second procedure in the non-exposure area, and is specifically used for controlling the motion platform to perform stepping motion to the exposure area for n times in the first direction after the substrate alignment marks of the motion platform are aligned with the substrate alignment mark detection sensor, wherein the motion platform moves at a constant speed in each stepping process, and n is more than or equal to 1.
10. A lithographic apparatus comprising the control device of claim 9, further comprising two motion stages, the working area of the motion stages comprising an exposure area and a non-exposure area.
11. The apparatus according to claim 10, further comprising a substrate alignment mark detection sensor disposed in the non-exposure region, wherein a distance between the substrate alignment mark detection sensor and a boundary between the exposure region and the non-exposure region in the first direction is greater than or equal to a length of the motion stage in the first direction.
12. The apparatus according to claim 11, wherein the substrate alignment mark detection sensor is located at a distance from a boundary between the exposure region and the non-exposure region in the first direction greater than or equal to a length of the motion stage in the first direction.
13. The lithographic apparatus of claim 12, wherein a side of any one motion stage adjacent to the other motion stage comprises a substrate alignment mark, the material carried by the motion stage comprising n pairs of material alignment marks; the n pairs of material alignment marks and the substrate alignment marks are sequentially arranged at equal intervals along a first direction, wherein n is larger than or equal to 1.
14. A computer-readable storage medium, on which a computer program is stored, characterized in that the program, when being executed by a processor, is adapted to carry out a method of controlling a lithographic apparatus according to any one of claims 1 to 8.
CN201910522070.6A 2019-06-17 2019-06-17 Photoetching equipment, control method and device thereof and storage medium Active CN112099315B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201910522070.6A CN112099315B (en) 2019-06-17 2019-06-17 Photoetching equipment, control method and device thereof and storage medium
TW108132095A TWI728458B (en) 2019-06-17 2019-09-05 Photoetching equipment and its control method, device and storage medium
KR1020190120836A KR102327697B1 (en) 2019-06-17 2019-09-30 Photolithography equipment, control method, apparatus and storage medium thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910522070.6A CN112099315B (en) 2019-06-17 2019-06-17 Photoetching equipment, control method and device thereof and storage medium

Publications (2)

Publication Number Publication Date
CN112099315A CN112099315A (en) 2020-12-18
CN112099315B true CN112099315B (en) 2021-10-22

Family

ID=73749328

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910522070.6A Active CN112099315B (en) 2019-06-17 2019-06-17 Photoetching equipment, control method and device thereof and storage medium

Country Status (3)

Country Link
KR (1) KR102327697B1 (en)
CN (1) CN112099315B (en)
TW (1) TWI728458B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043213A (en) * 2000-07-25 2002-02-08 Nikon Corp Stage device and exposure system
CN101005014A (en) * 2006-01-19 2007-07-25 三星电子株式会社 Semiconductor device fabrication equipment and method of using the same
JP2007293376A (en) * 2007-08-14 2007-11-08 Hitachi High-Technologies Corp Exposure device and method for manufacturing substrate
CN102445858A (en) * 2011-11-28 2012-05-09 上海华力微电子有限公司 Technical matching method for photo-etching machines
CN104375388A (en) * 2014-10-13 2015-02-25 江苏影速光电技术有限公司 Multi-workpiece table direct-writing photoetching system
CN109856925A (en) * 2019-03-22 2019-06-07 上海微电子装备（集团）股份有限公司 Double-workpiece-table flexibility winding exposure device and exposure method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0951054B1 (en) * 1996-11-28 2008-08-13 Nikon Corporation Aligner and method for exposure
US6836093B1 (en) * 1999-12-21 2004-12-28 Nikon Corporation Exposure method and apparatus
JP2005317916A (en) * 2004-03-30 2005-11-10 Canon Inc Exposure apparatus and device manufacturing method
CN106483778B (en) * 2015-08-31 2018-03-30 上海微电子装备（集团）股份有限公司 Based on relative position measurement to Barebone, double-workpiece-table system and measuring system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043213A (en) * 2000-07-25 2002-02-08 Nikon Corp Stage device and exposure system
CN101005014A (en) * 2006-01-19 2007-07-25 三星电子株式会社 Semiconductor device fabrication equipment and method of using the same
JP2007293376A (en) * 2007-08-14 2007-11-08 Hitachi High-Technologies Corp Exposure device and method for manufacturing substrate
CN102445858A (en) * 2011-11-28 2012-05-09 上海华力微电子有限公司 Technical matching method for photo-etching machines
CN104375388A (en) * 2014-10-13 2015-02-25 江苏影速光电技术有限公司 Multi-workpiece table direct-writing photoetching system
CN109856925A (en) * 2019-03-22 2019-06-07 上海微电子装备（集团）股份有限公司 Double-workpiece-table flexibility winding exposure device and exposure method

Also Published As

Publication number Publication date
CN112099315A (en) 2020-12-18
TW202101120A (en) 2021-01-01
KR102327697B1 (en) 2021-11-17
KR20200144448A (en) 2020-12-29
TWI728458B (en) 2021-05-21

Similar Documents

Publication Publication Date Title
EP2041622B1 (en) Precise positioning system for dual stage switching exposure
US8134689B2 (en) Dual stage positioning and switching system
CN100504614C (en) Stepping scan photo-etching machine double-platform exchanging and positioning system
KR102043821B1 (en) Mask transmission device and transmission method
CN103984208A (en) Mask template transmission system
CN104375388A (en) Multi-workpiece table direct-writing photoetching system
CN102157421B (en) Silicon wafer prealignment device and prealignment method
CN112099315B (en) Photoetching equipment, control method and device thereof and storage medium
CN108710266A (en) A kind of the write-through exposure system and method for trigger-type aligning structure
US6680775B1 (en) Substrate treating device and method, and exposure device and method
CN112099317B (en) Photoetching equipment, control method and device thereof and storage medium
US20110116070A1 (en) Exposure apparatus and method of manufacturing device
EP1669804A2 (en) Barrier film material and pattern formation method using the same
CN214278628U (en) Seamless splicing mechanism for IC lead frame
KR20150050371A (en) Equipment for exposing and developing, and method for the same
CN103676488A (en) Mask connecting mechanism and mask stage with same
JP2874714B2 (en) Semiconductor analysis / processing equipment
KR100922657B1 (en) Detecting apparatus of sliding of reticle in Scanner and method thereof
JPS6152973B2 (en)
WO2023177548A1 (en) Package imaging for die location correction in digital lithography
JPS63280419A (en) Electron beam exposure
JPH0365011B2 (en)
JPH01184823A (en) Projecting and exposing device
JPH04245617A (en) Electron beam lithographic equipment
JP2010072191A (en) Exposure method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant