CN112097656A - Detection system and detection method for edge removal width of wafer back sealing film - Google Patents
Detection system and detection method for edge removal width of wafer back sealing film Download PDFInfo
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- CN112097656A CN112097656A CN202011235448.3A CN202011235448A CN112097656A CN 112097656 A CN112097656 A CN 112097656A CN 202011235448 A CN202011235448 A CN 202011235448A CN 112097656 A CN112097656 A CN 112097656A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention relates to a detection system and a detection method for edge removal width of a wafer back sealing film, wherein the detection system comprises: the wafer bearing structure comprises a base and a bearing platform which is rotatably arranged on the base; the image acquisition structure is used for acquiring images of the edges of a plurality of wafers at a preset frequency in the process that the bearing platform drives the wafers to rotate for a circle at a preset speed; the image processing structure comprises a first image processing unit and a second image processing unit, wherein the first image processing unit is used for carrying out binarization processing on the images of the wafer edges acquired by the image acquisition structure so as to acquire first position information of the edge of the back sealing film and second position information of the edge of the wafer in the images of the edge of each wafer, and the second image processing unit is used for acquiring the removal width of the edge of the back sealing film according to the first position information and the second position information; and the second image processing structure judges whether the edge removal of the back sealing film meets the standard according to whether the removal width is within a preset range.
Description
Technical Field
The invention relates to the technical field of silicon chip product manufacturing, in particular to a detection system and a detection method for edge removal width of a wafer back sealing film.
Background
The ever-decreasing feature line width dimensions of integrated circuits have placed increasing demands on the substrate silicon wafers and it has become increasingly difficult to control the grown-in defects of single crystal silicon, and therefore epitaxial wafers are increasingly being used. The epitaxial wafer has electrical properties that are not possessed by the polished wafer and eliminates many of the surface/near-surface defects introduced during crystal growth and subsequent wafer processing. The epitaxial wafer is mostly applied to logic circuit chips, DRAM and CMOS devices, and has more advantages than a polished wafer in the aspects of improving the device performance and the chip yield.
In order to prevent the evaporation of impurities in the substrate during the high temperature epitaxy process, which results in the self-doping of non-main doping substances, epitaxial substrate slices, especially heavily doped substrate slices, generally use back-sealed SiO2The film is in a manner to avoid or reduce such doping. While back-sealing SiO2The film process usually uses chemical vapor deposition, which produces SiO on the back, front, or edges2And (3) a membrane. SiO unnecessary on the front surface of the wafer2The film can be easily removed by soaking in HF solution, or can be completely removed by direct polishing process, and SiO on the edge2The removal of the film is relatively complicated. If SiO exists at the edge in the back sealing process2The film residue can be used as a nucleation center in the following epitaxial process, polycrystal and amorphous films are formed at the edge of the wafer and extend to the center, and local stress change can be brought to the wafer, so that dislocation, stacking fault and the like are introduced in the epitaxial growth process, the increase of device leakage current is caused, the quality of a gate oxide layer is reduced, and breakdown can be directly caused seriously. Thus edge SiO2The removal of the film is very important.
The method for measuring the edge removal width of the back sealing film in the related technology generally adopts manual point selection and is matched with a microscope, a plurality of points are selected on the edge of a wafer and placed under the microscope, the edge of the back sealing film and the edge of a thin film of the wafer are distinguished through naked eyes, the scale difference between the edge of the back sealing film and the edge of the thin film of the wafer is recorded as the value of the edge removal width of the back sealing film, the average value of the edge removal width of the back sealing film at a plurality of selected points is obtained, and the method for detecting the edge removal width of the back sealing film through the manual point selection and the microscope has the defects of insufficient data.
Disclosure of Invention
In order to solve the technical problems, the invention provides a detection system and a detection method for the edge removal width of a wafer back sealing film, which solve the problems of insufficient comprehensiveness and large error of manually measured data of the edge removal width of the back sealing film.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: a wafer back cover film edge removal width detection system comprises:
the wafer bearing structure comprises a base and a bearing platform which is rotatably arranged on the base;
the image acquisition structure is used for acquiring images of the edges of a plurality of wafers at a preset frequency in the process that the bearing table drives the wafers to rotate for a circle at a preset speed;
the first image processing structure comprises a first image processing unit and a second image processing unit, the first image processing unit is used for carrying out binarization processing on the image acquired by the image acquisition structure so as to acquire first position information of the edge of the back sealing film and second position information of the edge of the wafer in the image of each edge of the wafer, and the second image processing unit is used for acquiring the removal width of the edge of the back sealing film according to the first position information and the second position information;
and the second image processing structure judges whether the edge removal of the back sealing film meets the standard or not according to whether the removal width is within a preset range or not, and judges that the edge removal of the back sealing film does not meet the standard if the removal width is outside the preset range.
Optionally, the preset frequency is a frequency of image acquisition: in the wafer rotating process, the image obtaining structure obtains the image of the edge of the wafer once every other preset rotating angle, and the preset rotating angle is smaller than or equal to 5 degrees.
Optionally, the image acquisition structure comprises a CCD camera.
Optionally, the first position information includes a first distance between a first point of the edge of the back sealing film and the center of the wafer, the second position information includes a second distance between a second point of the edge of the wafer and the center of the wafer, an extension line of a connection line between the first point and the second point passes through the center of the wafer, and the removal width is a difference between the first distance and the second distance.
Optionally, the second image processing structure includes a first processing unit, a second processing unit, and a third processing unit;
the first processing unit is used for setting the initial position of the edge of the wafer and generating a relation schematic diagram between the removal width and the rotation angle of the wafer;
the second processing unit is used for adding a preset interval value corresponding to the preset range in the relation schematic diagram;
the third processing unit is used for judging whether the edge removal of the back seal film meets the standard according to whether the removal width in the relation schematic diagram is within the preset interval value, judging that the edge removal of the back seal film does not meet the standard if the removal width is outside the preset interval value, judging that the edge removal of the back seal film meets the standard if the removal width is within the preset interval value, and taking the average value of the removal widths as the actually required removal width value of the edge of the back seal film.
The embodiment of the invention also provides a method for detecting the edge removal width of the wafer back seal film, which is applied to the detection system for the edge removal width of the wafer back seal film, and comprises the following steps:
placing a wafer on the bearing table, wherein the wafer is driven by the bearing table to rotate at a preset speed;
in the process that the bearing table drives the wafer to rotate for a circle at a preset speed, obtaining images of the edges of the wafer at a preset frequency;
carrying out binarization processing on the image of the wafer edge acquired by the image acquisition structure to acquire first position information of the edge of the back sealing film and second position information of the wafer edge in the image of each wafer edge;
obtaining the removal width of the edge of the back sealing film according to the first position information and the second position information;
and judging whether the edge removal of the back sealing film meets the standard according to whether the removal width is within a preset range, and if the removal width is outside the preset range, judging that the edge removal of the back sealing film does not meet the standard.
Optionally, the first position information includes a first distance between a first point of the edge of the back sealing film and the center of the wafer, the second position information includes a second distance between a second point of the edge of the wafer and the center of the wafer, an extension line of a connection line between the first point and the second point passes through the center of the wafer, and the removal width is a difference between the first distance and the second distance.
Optionally, whether the edge removal of the back seal film meets the standard is judged according to whether the removal width is within the preset range, and if the removal width is outside the preset range, it is judged that the edge removal of the back seal film does not meet the standard, which specifically includes:
setting the initial position of the edge of the wafer, and generating a relation schematic diagram between the removal width and the rotation angle of the wafer;
adding a preset interval value corresponding to the preset range in the relation schematic diagram;
and judging whether the edge removal of the back sealing film meets the standard or not according to whether the removal width in the relation schematic diagram is within the preset interval value or not, if the removal width is outside the preset interval value, judging that the edge removal of the back sealing film does not meet the standard, if the removal width is within the preset interval value, judging that the edge removal of the back sealing film meets the standard, and taking the average value of the removal widths as the actually required removal width value of the edge of the back sealing film.
The invention has the beneficial effects that: the image acquisition structure acquires the image of the edge of the wafer in real time along with the rotation of the wafer, and the edge of the back sealing film is completely measured for one circle, so that the comprehensiveness of the measured data is ensured; the image is automatically processed to find edges, and the problems of large error and low precision caused by naked eye resolution are solved.
Drawings
FIG. 1 is a schematic diagram of a wafer in the related art;
FIG. 2 is a diagram illustrating related parameters of a wafer edge obtained in a related art;
FIG. 3 is a schematic diagram of a system for detecting the edge removal width of a wafer back-sealing film according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating parameters associated with an edge of a wafer obtained in an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating the relationship between the edge removal width of the wafer back sealing film and the wafer rotation angle according to an embodiment of the present invention;
FIG. 6 is a flowchart illustrating a method for detecting a removal width of an edge of a wafer back-sealing film according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, only for the purpose of facilitating description of the present invention and simplifying description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
As shown in fig. 1 and fig. 2, a method for measuring a wafer edge removal width in the related art generally includes manually measuring a plurality of test points (usually 4 or 9 points, 4 test points are shown in fig. 1) on a wafer edge by using a microscope, recording a scale b1 of an edge 101 of a wafer 100 and a scale a1 of an edge 111 of a back sealing film 110 corresponding to a certain test point 120 by using scales on the microscope, and recording width differences Δ d1= b1-a1 between the two, and recording width differences Δ d2, Δ d3 and the like of other test points by using the same method, where fig. 2 is a graph of a wafer edge removal width Δ d measured by using a 4-point method, and taking an average value of the removal widths Δ d of the 4 test points as a removal width value, but the method has the following problems:
1. the data comprehensiveness is not enough; the manual measurement data is only a conventional 4-point method or 9-point method, namely, one data is measured at intervals of 90 degrees or 40 degrees, the test points are manually selected and placed under a microscope for measurement, the number of the measurement points is too small, only 4-9 test points exist, the measurement data cannot cover the whole film edge, missing points may exist, for example, the position of a certain point x of the edge of the back-sealing film is excessively removed, so that the scale ax of the edge of the back-sealing film is small, the removal width delta dx at the point x is widened, and the point x is not included in the selected test points and is not tested, namely the data is not comprehensive enough;
2. the measurement accuracy is not sufficient; when the scales on the edge of the back sealing film and the scales on the edge of the wafer are distinguished through human eyes by using a microscope for observation, the precision of the scales of the microscope is low (0.1 mm), the distinguishing of the scales by the human eyes is subjective, the measuring precision of the removal width is low, the labor cost and the time cost are required, and the mass production cannot be realized.
In view of the above problems, referring to fig. 3 to 5, the present embodiment provides a system for detecting an edge removal width of a wafer back cover film, including:
the wafer bearing structure comprises a base 302 and a bearing platform 303 which is rotatably arranged on the base 302;
the image obtaining structure 300 is configured to obtain images of a plurality of wafer edges at a preset frequency in a process that the susceptor 303 drives the wafer W to rotate at a preset speed for one circle;
the image processing structure 301 is used for acquiring an image of the edge of the wafer and judging whether the edge removal of the back sealing film meets the standard according to the image of the edge of the wafer, and the image processing structure 301 comprises a first image processing structure and a second image processing structure;
the first image processing structure comprises a first image processing unit and a second image processing unit, wherein the first image processing unit is used for carrying out binarization processing on the image acquired by the image acquisition structure 300 so as to acquire first position information of the edge of the back sealing film and second position information of the edge of the wafer in the image of each edge of the wafer, and the second image processing unit is used for acquiring the removal width of the edge of the back sealing film according to the first position information and the second position information;
and the second image processing structure judges whether the edge removal of the back sealing film meets the standard or not according to whether the removal width is within a preset range or not, and judges that the edge removal of the back sealing film does not meet the standard if the removal width is outside the preset range.
The bearing table 303 can drive the wafer W placed on the bearing table to synchronously rotate, the image acquisition structure 300 is fixed, the image acquisition structure 300 acquires an image of the edge of the wafer in real time along with the rotation of the wafer W, the image acquisition structure 300 acquires the image of the edge of the wafer according to a preset frequency, the wafer rotates for a circle, the image acquisition structure 300 can acquire a complete outline image of the wafer, through the arrangement of the image processing structure 301, the whole coverage measurement of the edge of the back sealing film for a circle can be realized by increasing the image acquisition frequency, the more the measurement points are, the higher the measurement precision is, and the comprehensiveness of the measurement data is ensured; the image is automatically processed to find edges, and the problems of large error and low precision caused by naked eye resolution are solved.
In this embodiment, for example, the preset frequency is the frequency of image acquisition: in the wafer rotating process, the image obtaining structure obtains the image of the edge of the wafer once every other preset rotating angle, and the preset rotating angle is smaller than or equal to 5 degrees.
It should be noted that, the number of the test points is determined according to the image acquisition frequency, the higher the image acquisition frequency is, the more and more dense the number of the measured test points is, and the lower the image acquisition frequency is, the less and more sparse the number of the measured test points is, for example, the plummer 303 drives the wafer to rotate by 1 degree for each time to acquire the image of the edge of the wafer, 360 test points on the edge of the wafer are measured, the plummer 303 drives the wafer to rotate by 5 degrees for each time to acquire the image of the edge of the wafer, and 72 test points on the edge of the wafer are measured.
The image obtaining structure 300 is fixed, the image obtaining structure 300 is started to be in a working state when the wafer starts to rotate, and along with the rotation of the wafer, the image obtaining structure 300 obtains the image of the edge of the corresponding wafer in real time according to a preset frequency, for example, the wafer rotates for a circle of 360 degrees, the image obtaining structure obtains the image of the edge of the wafer according to a rule that the image of the edge of the wafer is obtained once every time the wafer rotates for one degree, and then the wafer rotates for a circle, and the image obtaining structure obtains the images of the edges of 360 wafers.
The preset frequency can be set according to actual needs, and is not limited to the above.
Illustratively in this embodiment, the image acquisition arrangement 300 comprises a CCD camera.
The resolution precision of the CCD camera can reach 0.001-0.01 mm. The method comprises the steps of adopting a rotary scanning measurement mode to carry out photographing scanning on the edge of the back sealing film of the wafer, carrying out real-time image binarization, recording scales of the edge position of the back sealing film and the scales of the edge position of the wafer, and improving the accuracy of the edge removal width of the back sealing film.
In this embodiment, the first position information includes a first distance between a first point of the edge of the back sealing film and the center of the wafer, the second position information includes a second distance between a second point of the edge of the wafer and the center of the wafer, an extension line of a connection line between the first point and the second point passes through the center of the wafer, and the removal width is a difference between the first distance and the second distance.
It should be noted that the first point is any point on the entire profile of the edge of the back sealing film, and the second point is a point on the entire profile of the edge of the wafer corresponding to the first point, that is, an extension line of a connection line between the first point and the second point passes through the center of the wafer.
Illustratively in this embodiment, the second image processing structure includes a first processing unit, a second processing unit, and a third processing unit;
the first processing unit is used for setting the initial position of the edge of the wafer and generating a relation schematic diagram between the removal width and the rotation angle of the wafer, and refer to fig. 5;
the second processing unit is used for adding a preset interval value corresponding to the preset range in the relation schematic diagram, and refer to c1 and c2 in fig. 5;
the third processing unit is used for judging whether the edge removal of the back seal film meets the standard according to whether the removal width in the relation schematic diagram is within the preset interval value, if the removal width is outside the preset interval value, the edge removal of the back seal film does not meet the standard, if the removal width is within the preset interval value, the edge removal of the back seal film meets the standard, and the average value of the removal widths is used as the actually required removal width value of the edge of the back seal film.
When the removal width delta Dn of the edge of the back sealing film is outside the preset interval value, judging that the removal of the edge of the back sealing film does not meet the standard, and giving the angle position of the wafer corresponding to the position where the removal width of the edge of the back sealing film does not meet the standard;
when the removal width delta Dn of the edge of the back sealing film is always within the preset interval value defined by c1 and c2, taking the average value of the delta Dn as the accurate removal width of the required back sealing film.
An embodiment of the present invention further provides a method for detecting a removal width of a wafer back cover film edge, and referring to fig. 6, the method applied to the detection system for the removal width of the wafer back cover film edge includes:
placing a wafer on the bearing table, wherein the wafer is driven by the bearing table to rotate at a preset speed;
in the process that the bearing table drives the wafer to rotate for a circle at a preset speed, obtaining images of the edges of the wafer at a preset frequency;
carrying out binarization processing on the image of the wafer edge acquired by the image acquisition structure to acquire first position information of the edge of the back sealing film and second position information of the wafer edge in the image of each wafer edge;
obtaining the removal width of the edge of the back sealing film according to the first position information and the second position information;
and judging whether the edge removal of the back sealing film meets the standard according to whether the removal width is within a preset range, and if the removal width is outside the preset range, judging that the edge removal of the back sealing film does not meet the standard.
In this embodiment, the first position information includes a first distance between a first point of the edge of the back sealing film and the center of the wafer, the second position information includes a second distance between a second point of the edge of the wafer and the center of the wafer, an extension line of a connecting line between the first point and the second point passes through the center of the wafer, the removal width is a difference between the first distance and the second distance, and referring to fig. 4, only the positions of one first point and one second point are shown in fig. 4, but actually measured are the positions of a plurality of points on the edge profile of the wafer and the positions of a plurality of points on the edge profile of the back sealing film.
Judging whether the edge removal of the back seal film meets the standard according to whether the removal width is within a preset range, and if the removal width is outside the preset range, judging that the edge removal of the back seal film does not meet the standard, wherein the method specifically comprises the following steps:
setting the initial position of the edge of the wafer, and generating a relation schematic diagram between the removal width and the rotation angle of the wafer, referring to fig. 5;
adding a preset interval value corresponding to the preset range in the relation schematic diagram;
and judging whether the edge removal of the back sealing film meets the standard or not according to whether the removal width in the relation schematic diagram is within the preset interval value or not, if the removal width is outside the preset interval value, judging that the edge removal of the back sealing film does not meet the standard, if the removal width is within the preset interval value, judging that the edge removal of the back sealing film meets the standard, and taking the average value of the removal widths as the actually required removal width value of the edge of the back sealing film.
The following describes the detection process of the method for detecting the edge removal width of the wafer back sealing film in this embodiment.
The wafer is placed on a bearing table 303, the bearing table 303 drives the wafer to rotate for a circle, a CCD camera is started while the bearing table 303 rotates, a real-time image of the wafer edge during rotation is shot and recorded and is transmitted to an image processing structure 301, and the shooting frequency can be set to be 1 degree/time or 5 degrees/time according to requirements;
the image of the edge of the wafer shot by the CCD camera each time is transmitted to the image processing module 301 in real time for binarization processing, the binarization processing divides the image into three areas, namely a back sealing film area 311, a wafer surface area 312 and a carrying platform area 313, according to a threshold value, the scale A1 of the edge of the back sealing film area and the scale B1 of the edge of the wafer surface area are recorded with high precision, and the corresponding removal width delta D1 is analyzed and recorded (delta D1= B1-A1);
after the wafer rotates one circle and is scanned, finishing the measurement of one wafer;
it should be noted that the image brightness depends on the shooting condition, and under the same condition, the brightness c of the bearing base station in the obtained image is the highest, the brightness b of the wafer surface is the lowest, and the brightness a of the back sealing film is higher than that of the wafer surface (the bearing platform is white, the wafer is silicon crystal, and the back sealing film is transparent), that is, c > a > b, although the image brightness will be changed due to the thickness of the back sealing film, the brightness of the back sealing film will not be lower than that of the wafer surface, because the brightness of the transparent film will be higher than that of the opaque silicon crystal, therefore, setting an appropriate brightness threshold x can make the back sealing film and the wafer two areas clearly distinguish.
In this embodiment, the image of the wafer edge photographed by the CCD camera each time is transmitted to the image processing module 301 in real time for binarization processing, which specifically includes the following steps:
in one embodiment, the obtained image of the wafer edge is subjected to image gray processing to obtain gray values of three regions, for example, the gray value of the carrier region is 200 ± 20, the gray value of the wafer surface region is 30 ± 10, and the gray value of the back sealing film region is 100 ± 20;
carrying out binarization processing on the image subjected to image gray processing: setting the brightness threshold x to be 60, then resetting the gray values of the carrier region and the backside sealing film region with the gray value greater than 60 to be 255 pure white, and resetting the gray value of the wafer region with the gray value less than 60 to be 0 pure black, wherein at this time, the three regions of the backside sealing film region 311, the wafer region 312 and the carrier region 313 are clearly distinguished. The image processing structure forms a relation graph between the edge removal width of the back sealing film and the rotation angle according to data A1, B1, delta D1 and the like after each image processing, and specifically, referring to FIG. 5, a coordinate system is established by taking the wafer rotation starting position as the origin, the wafer rotation angle as the abscissa and the distance from the CCD scale zero point as the ordinate to prepare the relation schematic diagram shown in FIG. 5;
according to the abscissa fluctuation of the removal width Δ Dn of the back-seal film in the relational graph shown in fig. 5, the change of the edge removal width of the back-seal film can be known, and if the edge removal of the back-seal film is excessive or incomplete, the change is reflected on the graph, and the Δ Dn curve protrudes upwards or downwards. Adding upper and lower limit lines c1 and c2 to define a rule interval (namely adding a preset interval is carried out, the curves of c1 and c2 correspond to two end values of the preset range), judging that the removal of the edge of the back sealing film does not meet the standard when the delta Dn is positioned outside the limited rule interval, and giving the angle position of the wafer corresponding to the position where the removal width of the back sealing film does not meet the standard;
when Δ Dn is always within the regular interval defined by c1 and c2, the average value of Δ Dn is taken as the required edge removal width of the back-sealing film.
It should be noted that, if the edge of the back sealing film is 149mm from the center of the wafer at a test point, the edge of the wafer is 150mm from the center of the wafer, the difference between the edge of the wafer surface and the edge of the back sealing film is 1mm, and the data 149mm, 150mm and 1mm are used for plotting, the data difference is too large for plotting, so in this embodiment, the distance from the zero point of the CCD scale is taken as the ordinate for plotting, the zero point position of the CCD scale is 145mm from the center of the wafer, at this time, the scale a1=149 and 145=4mm of the edge of the back sealing film, the scale B1=150 and 145=5mm of the edge of the wafer surface, the trimming width is Δ D = B1-a1=1mm, and the data 4mm, 5mm and 1mm are used for plotting, so as to.
It should be noted that the CCD scale may be disposed on an eyepiece of the CCD camera, or may be a scale that is created for drawing convenience in an image processing process by the second image processing structure after an image of the edge of the wafer is acquired by the CCD camera.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. A wafer back seal film edge removal width detection system, comprising:
the wafer bearing structure comprises a base and a bearing platform which is rotatably arranged on the base;
the image acquisition structure is used for acquiring images of the edges of a plurality of wafers at a preset frequency in the process that the bearing table drives the wafers to rotate for a circle at a preset speed;
the first image processing structure comprises a first image processing unit and a second image processing unit, the first image processing unit is used for carrying out binarization processing on the images acquired by the image acquisition structure so as to acquire first position information of the edge of the back sealing film and second position information of the edge of the wafer in the image of each edge of the wafer, and the second image processing unit is used for acquiring the removal width of the edge of the back sealing film according to the first position information and the second position information;
and the second image processing structure judges whether the edge removal of the back sealing film meets the standard or not according to whether the removal width is within a preset range or not, and judges that the edge removal of the back sealing film does not meet the standard if the removal width is outside the preset range.
2. The system of claim 1, wherein the predetermined frequency is a frequency of image acquisition: in the wafer rotating process, the image obtaining structure obtains the image of the edge of the wafer once every other preset rotating angle, and the preset rotating angle is smaller than or equal to 5 degrees.
3. The system as claimed in claim 1, wherein the image capturing structure comprises a CCD camera.
4. The system as claimed in claim 1, wherein the first position information includes a first distance between a first point of the edge of the back sealing film and a center of the wafer, the second position information includes a second distance between a second point of the edge of the wafer and the center of the wafer, an extension line of a connecting line between the first point and the second point passes through the center of the wafer, and the removal width is a difference between the first distance and the second distance.
5. The system of claim 1, wherein the second image processing structure comprises a first processing unit, a second processing unit and a third processing unit;
the first processing unit is used for setting the initial position of the edge of the wafer and generating a relation schematic diagram between the removal width and the rotation angle of the wafer;
the second processing unit is used for adding a preset interval value corresponding to the preset range in the relation schematic diagram;
the third processing unit is used for judging whether the edge removal of the back seal film meets the standard according to whether the removal width in the relation schematic diagram is within the preset interval value, judging that the edge removal of the back seal film does not meet the standard if the removal width is outside the preset interval value, judging that the edge removal of the back seal film meets the standard if the removal width is within the preset interval value, and taking the average value of the removal widths as the actually required removal width value of the edge of the back seal film.
6. A method for detecting the edge removal width of a wafer back seal film, which is applied to the system for detecting the edge removal width of the wafer back seal film according to any one of claims 1 to 5, and comprises the following steps:
placing a wafer on the bearing table, wherein the wafer is driven by the bearing table to rotate at a preset speed;
in the process that the bearing table drives the wafer to rotate for a circle at a preset speed, obtaining images of the edges of the wafer at a preset frequency;
carrying out binarization processing on the image of the wafer edge acquired by the image acquisition structure to acquire first position information of the edge of the back sealing film and second position information of the wafer edge in the image of each wafer edge;
obtaining the removal width of the edge of the back sealing film according to the first position information and the second position information;
and judging whether the edge removal of the back sealing film meets the standard or not according to whether the removal width is within a preset range or not, and judging that the edge removal of the back sealing film does not meet the standard if the removal width is outside the preset range.
7. The method as claimed in claim 6, wherein the first position information includes a first distance between a first point of the edge of the back sealing film and the center of the wafer, the second position information includes a second distance between a second point of the edge of the wafer and the center of the wafer, an extension line of a connecting line between the first point and the second point passes through the center of the wafer, and the removal width is a difference between the first distance and the second distance.
8. The method as claimed in claim 6, wherein the step of determining whether the edge removal of the back cover film meets the standard according to whether the removal width is within a predetermined range, and if the removal width is outside the predetermined range, determining that the edge removal of the back cover film does not meet the standard specifically comprises:
setting the initial position of the edge of the wafer, and generating a relation schematic diagram between the removal width and the rotation angle of the wafer;
adding a preset interval value corresponding to the preset range in the relation schematic diagram;
and judging whether the edge removal of the back sealing film meets the standard or not according to whether the removal width in the relation schematic diagram is within the preset interval value or not, if the removal width is outside the preset interval value, judging that the edge removal of the back sealing film does not meet the standard, if the removal width is within the preset interval value, judging that the edge removal of the back sealing film meets the standard, and taking the average value of the removal widths as the actually required removal width value of the edge of the back sealing film.
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