CN107833843A - The analysis method and analysis system of defect source, defect detecting device - Google Patents
The analysis method and analysis system of defect source, defect detecting device Download PDFInfo
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- CN107833843A CN107833843A CN201711065676.9A CN201711065676A CN107833843A CN 107833843 A CN107833843 A CN 107833843A CN 201711065676 A CN201711065676 A CN 201711065676A CN 107833843 A CN107833843 A CN 107833843A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The present invention relates to the analysis method of defect source and analysis system,Defect detecting device,By being carried out to wafer, optical scanner obtains the process layer of target defect and several process layers being scanned through before are handled,Several process layers being scanned through whether there is the characteristics defect matched with the target defect before judging according to from the close-by examples to those far off order,So as to analyze the source of the target defect,To obtain introducing the process layer (or corresponding technique) of the target defect,Obtain the source of target defect,Pass through the analysis method and analysis system of defect source provided by the invention,Defect detecting device,Greatly reduce man-hour and the caused human error that artificial judgment air blister defect source is spent,Pass through the analysis and monitoring in the source to air blister defect,Technique or the abnormal conditions of board can be determined in time,Help to reduce unnecessary loss.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to the analysis method of defect source and analysis system, defect inspection
Survey device.
Background technology
With the continuous ripe development of semiconductor fabrication, imaging sensor increasingly pooled applications in digital camera,
PC cameras, picture telephone, video conference, intelligent security system, reversing radar of vehicle, game machine and industrial medical treatment etc. are numerous
Field.
Imaging sensor can be divided into CCD (Charge Coupled according to photo-sensitive cell and the difference of light sensitivity principles
Device, charge coupled cell) imaging sensor and CMOS (ComplementaryMetal Oxide Semiconductor,
Complementary metal-oxide-semiconductor) imaging sensor.Wherein, cmos image sensor belongs to photoelectric component and cmos image
For sensor because its manufacture method is compatible with existing method for manufacturing integrated circuit, drive circuit and pixel can be integrated in one by it
Rise, simplify hardware design while also reduce the power consumption of system, cmos image sensor can while optical signal is gathered
To obtain electric signal, moreover it is possible to which real time processed images information, reaction speed are fast；Cmos image sensor also has price just simultaneously
Preferably, bandwidth is larger, blur prevention, accesses the advantages of flexible and fill factor is larger, is increasingly becoming the main flow of imaging sensor.
The method of one kind manufacture cmos image sensor (also known as CIS, CMOS Image Sensor) is to form one side
The device die (device wafer) for having photosensitive region and the bottom wafer (carrierwafer) for not making photosensitive region pass through
After crossing the related process such as edging (wafertrim) and cmp (CMP), (bond) is bonded by bonding technology, afterwards
Make again such as colored filter, lenticule, metal isolated gate, ultimately form complete cmos image sensor.
But using the above method after by bottom wafer and device die bonding, through optical scanner board to the knot
Synthetic member is optically inspected, and air blister defect (bubble defect) in the wafer formed be present.And existing image analysis
There is error in parsing of the system to air blister defect, and be difficult to the source for determining air blister defect.Air blister defect both may be by bottom
Wafer introduces, it is also possible to is introduced by device die or other process layers (or corresponding technique), judges coming for air blister defect at present
Source also needs to artificial judgement and manual manufacture air blister defect tendency chart (bubble chart), and this process adds cost of labor
And human error be present, and be difficult to find and monitor technique or exception (abnormal) situation of board in time.
The content of the invention
It is an object of the invention to provide a kind of analysis method of defect source, a kind of analysis system and one of defect source
Kind defect detecting device, can be automatically analyzed to the source of defect, timely and accurately find the target defect (example in wafer
Such as air blister defect) source, so as to reduce cost of labor.
On the one hand, the invention provides a kind of analysis method of defect source, comprise the following steps：
(1) optical scanner is carried out to wafer, the information of target defect is obtained, using the process layer where the wafer as mesh
Layer where marking defect；
(2) whether n-th of process layer before layer where judging target defect passes through optical scanner, if it is to enter to judge
Row step (3), if judgement is no, n numerical value is added 1, then judge whether corresponding process layer passes through optical scanner；
(3) by n-th of process layer before layer where the information of the target defect and target defect through optical scanner institute
The information of the characteristics defect of acquisition is compared, and n-th of process layer before layer where judging target defect whether there is and institute
The characteristics defect of target defect matching is stated, if it is that the numerical value for making n adds 1 to judge, the step of continuing executing with (2)~(3)；If judge
No, then (n-1) individual process layer before the source of the target defect is layer where target defect, the analysis terminates；
Wherein, n is integer more than or equal to 1, and in step (2) and (3), n is according to order value from small to large.
Optionally, the analysis method in drawbacks described above source also includes：When n value terminate or step (2) in covered institute
When having the process layer of setting quantity, then (n-1) individual technique before the source of the target defect is layer where target defect
Layer, the analysis terminate.
Optionally, the information of the target defect and the characteristics defect includes iting the horizontal seat in same distribution plots
Mark and ordinate, in step (3), n-th of process layer before layer where judging target defect whether there is and the target
The method of the characteristics defect of defect matching includes：By the center of either objective defect and the abscissa of any feature defect and vertical seat
Target center is subtracted each other respectively, obtains the abscissa difference and ordinate difference at target defect center and characteristics defect center respectively,
If the absolute value of the abscissa difference and ordinate difference is within the coordinate tolerance value of setting, then can be determined that described
Target defect and characteristics defect matching.
Optionally, in step (3), n-th before layer where judging target defect by the method for data filtering denoising
Individual process layer whether there is the characteristics defect to match with the target defect.
Optionally, the target defect includes air blister defect, and the information of the target defect includes the coordinate of air blister defect
Information and dimension information.
Optionally, the wafer includes bottom wafer and device die, and the bottom wafer and the device die have
The surface for contacting with each other and overlapping.
On the other hand, present invention also offers a kind of analysis system of defect source, dividing for the defects of above-mentioned source is performed
Analysis method, including：
Optic scan module, characteristics defect is obtained for carrying out optical scanner to the process layer formed based on a certain technique
Information, and/or the information that optical scanner obtains target defect is carried out to the wafer after the multiple techniques of completion；
Defect source analysis module, lacked for carrying out the analysis acquisition target according to the analysis method of the defect source
Sunken source；
Data memory module, for preserving the information of the characteristics defect and/or the target defect, and target defect
Source information；
Data processing and output module, for calling the information in the target defect source in the data memory module to go forward side by side
Row data processing and output.
Optionally, the defect source analysis module includes data filtering denoising unit, for judging target defect place
N-th of process layer before layer whether there is the characteristics defect to match with the target defect, wherein, n is more than or equal to 1
Integer.
Optionally, the data processing and output module include data extracting unit and chart generation unit, wherein, it is described
Data extracting unit is connected with the data memory module, and the chart generation unit is connected with the data extracting unit.
Another further aspect, present invention also offers a kind of defect detecting device, include the analysis system in drawbacks described above source.
Compared with prior art, the analysis method of defect source provided by the invention and analysis system, defect detecting device,
Optical scanner is carried out to the wafer after the multiple techniques of completion, the information of target defect is obtained, by the technique where the wafer
Layer is as layer where target defect, and n-th of process layer before layer where judging target defect whether there is and the mesh
The characteristics defect of defect matching is marked, n is the integer more than or equal to 1, and according to order value from small to large, so that it is determined that institute
It is when layer introducing or last layer introducing, so as to coming for accurate judgement target defect by optical scanner to state target defect
Source, cost of labor is reduced, reduce human error, and be advantageous to obtain technique or the abnormal information of board in time, reduced not
Necessary loss.
Brief description of the drawings
The schematic flow sheet of the analysis method in the defects of Fig. 1 is embodiment of the present invention source.
The structural representation of the defects of Fig. 2 is embodiment of the present invention source analysis system.
Description of reference numerals：
1- optic scan modules；2- defect source analysis modules；3- data filtering denoising units；4- data memory modules；
5- data processings and output module.
Embodiment
The defects of below in conjunction with the drawings and specific embodiments to the present invention source analysis method and analysis system, defect inspection
Device is surveyed to be described in further detail.It should be understood that those skilled in the art can change invention described herein, and still
Realize beneficial effects of the present invention.Therefore, description is appreciated that for the widely known of those skilled in the art below, and
It is not intended as limitation of the present invention.It should be noted that the order of methods as described below or step is not necessarily executable
The unique order of these methods or step, and other steps that the step described in some can be omitted and/or some are not described here
Suddenly this method can be added to.The present invention can be implemented by various integrated circuit manufacture process technologies, only refer to understanding originally herein
Process technique needed for invention.
Inventor, which studies, to be found, in cmos image sensor manufacturing process, by device of the one side formed with photosensitive region
After wafer is bonded with being formed without the bottom wafer of photosensitive region, the wafer formed is optically inspected, passes through optics
Occasionally there are air blister defect in the wafer that scanning machine scanning discovery is formed.
The air blister defect detected through optical scanning system is probably to be introduced by bottom wafer, such as bottom wafer is being formed
Photosensitive region and during carrying out fitting pre-treatment, if introducing grain defect on the surface of fitting, in fitting
Easily cause to produce air blister defect afterwards；In addition, air blister defect be also possible to be introduced by device die, such as device die is being carried out
During being bonded pre-treatment, the fitting pre-treatment is, for example, the techniques such as edging (trim), cmp (CMP), such as
Grain defect is introduced on the surface that fruit is bonded again in the process, easily causes to produce air blister defect after fitting；In addition, gas
Bubble defect be also possible to be introduced by bonding technology.Certainly, the source of air blister defect is not limited to above-mentioned technical process, it is also possible to
Other processing steps introduce.The source on air blister defect can only be by manually removing substantially appraisal and manual record at present, this
Process adds cost of labor and human error be present, and is difficult to find technique or the abnormal conditions of board in time.
Based on above-mentioned discovery, the embodiment of the present invention provides analysis method and analysis system, the defect inspection of a kind of defect source
Device is surveyed, the process layer using the wafer completed after multiple techniques as the technique of last corresponding progress, it may be found that exist
The process layer of target defect by layer where target defect compared with process layer before, is sentenced as layer where target defect
Process layer before disconnected whether there is the characteristics defect matched with the target defect, so that it is determined that target defect is swept by optics
Retouch when layer introduces or last layer introduces, so as to the source of accurate judgement target defect, the defects of offer using the present embodiment
The analysis method and analysis system in source, defect detecting device, cost of labor can be reduced, reduce human error, and favorably
In obtaining technique or the abnormal information of board in time, unnecessary loss is reduced.
Specifically, the analysis method in the defects of the present embodiment provides source, finds certain in wafer after by optical scanner
One layer has target defect, and after obtaining the information of the target defect in wafer, is invoked at such as data memory module (or one
Database) in storage several preceding process layers being scanned through characteristics defect information, in the present embodiment, characteristics defect refers to
Be the defects of storing after the above-mentioned process layer being scanned through is scanned through, several preceding warps of layer where judging target defect
With the presence or absence of the characteristics defect to match with the target defect in the process layer of overscanning, the selection to process layer is from apart from mesh
The nearest process layer being scanned through of layer where mark defect starts, main according to matching result according to from closely being carried out to remote order
To include following two situation：
A kind of situation is, if the 1st process layer being scanned through (i.e. layer where target defect before layer where the target defect
A upper process layer being scanned through) characteristics defect that matches with the target defect is not present, then judge this target
Defect source is layer where target defect；
Another situation is, if in the process layer that n-th (n >=1, n are integer) is scanned through before layer where target defect
In the presence of the characteristics defect to match with the target defect, then this target defect is probably derived from before layer where target defect the
The process layers that n is scanned through, it is also possible to certain before n-th of process layer being scanned through before layer where target defect
One process layer, therefore, this fashion can not confirm the specific source of target defect, it is also necessary to the before layer where continuing to judge target defect
(n+1) with the presence or absence of the characteristics defect to match with target defect in the individual process layer being scanned through；It is if it was found that a certain through overscan
The characteristics defect to match with the target defect is not present in the process layer retouched, then stops analyzing and judging last matching
Process layer and the source that corresponding technique is this target defect；If some process layers that the need of setting judge are present and the target
The characteristics defect that defect matches, then stop analysis, change the number (continuing to trace back) of the process layer of setting, can also stop
Analyze and judge last matching process layer be this target defect source, specifically can regarding wafer process layer situation and
It is fixed.Using above-mentioned analysis method, so as to judge to obtain the source of the target defect.
The schematic flow sheet of the analysis method in the defects of Fig. 1 is embodiment of the present invention source.Fig. 2 is the embodiment of the present invention
The structural representation of the analysis system of defect source.The defects of below in conjunction with shown in Fig. 1 and Fig. 2 to the present embodiment source analysis
Method and analysis system are described in detail.The analysis method in the defects of the present embodiment source, comprises the following steps：
Step (1)：Optical scanner is carried out to wafer, if target defect be present, further can obtain the information of target defect.
Here, layer where being referred to as target defect there will be the process layer where the wafer of target defect.
Specifically, step (1) can carry out target defect detection, the present embodiment by an optic scan module 1 to wafer
Described in wafer be, for example, one by bonding combination wafer, for manufacturing cmos image sensor (CIS), specifically, described
Wafer includes bottom wafer and device die, and the bottom wafer and the device die are laid equal stress on (or fitting) is contacted with each other
The surface of conjunction.It is brilliant formed with photosensitive region, the bottom on the surface that the device die does not contact with the bottom wafer
Member and device die include silicon substrate.Certainly, the invention is not restricted to this, such as the wafer can also only include device die.
In the present embodiment, the target defect is, for example, air blister defect, but in other embodiments, wafer and target lack
Sunken type can be different from the present embodiment.
Wafer is scanned using optic scan module 1 in the present embodiment, optic scan module 1 is, for example, that an optics is swept
Board is retouched, wafer is scanned by way of photo taking type or line scanning, and obtained target defect such as air blister defect
Information, such as coordinate (positional information) and bubble of the air blister defect in a wafer map (wafer map) can be obtained
Diameter (dimension information), the information of the target defect can be stored in a data memory module 4.Due to bubble in the present embodiment
The shape of defect is different, and air blister defect is stored in again after can also being classified according to the shape such as diameter difference of air blister defect
Data memory module 4, the invention is not restricted to this.In another embodiment, mesh can also be obtained by other optical scanners
The information of defect is marked, and is stored in an another database different from data memory module 4.
Step (2)：(i.e. layer where target defect is upper for the 1st (n=1) individual process layer before layer where judging the target defect
One process layer) whether pass through optical scanner；If so, then carry out step (3)；If it is not, then add n (n >=1, n are integer) numerical value
1, then whether process layer corresponding to judging pass through optical scanner, until finding before the layer of target defect place that the 1st is scanned through
Process layer.
Why in this way, being because inventor has found, possible some process layers will not introduce the mesh substantially in practice
Defect is marked, so optical scanner inspection need not be carried out when completing these techniques.Only to being partly easier to introduce target in practice
The process layer of defect carries out optical scanner, to improve efficiency, here, the process layer over-scanned is referred to as " to be scanned through
Process layer ", i.e. referred to herein " the 1st process layer being scanned through before layer where target defect " not necessarily mesh
The last layer of layer where marking defect, but span is from layer where target defect recently and the process layer that is scanned through.This step can
Carried out by defect source analysis module 2.It is of course also possible to all process layers are scanned, so can be more accurately
Determine the source of target defect in the present embodiment.
In the present embodiment, one or more process layers before layer where target defect for example pass through optic scan module
1 has carried out optical scanner, and objective opticses scanning is carried out after bottom wafer and device die complete bonding technology, that
, that is to say, that it is to find target defect in bonding technology layer (the present embodiment is air blister defect), then the bonding technology layer
I.e. as layer where target defect, several process layers are from closely to far e.g. chemical machine successively before bubble optical scanner is carried out
Tool grinding layer (corresponding chemical mechanical milling tech), edging process layer (corresponding edging technique) ..., can be right in the present embodiment
Several preceding process layers are set.But it will be apparent to a skilled person that several preceding process layers refer specifically to generation
Technique it is relevant with the type and purposes of wafer, in other embodiments, several preceding process layers can also lack it is above-mentioned certain
One process layer or a certain process layer of increase.
Specifically, because carrying out optical scanner to the target defect in wafer is found in bonding technology layer, this implementation
Step (2) includes following processes in example：Firstly the need of judging that cmp layer (carried out chemical mechanical milling tech
Bottom wafer and/or device die) whether pass through optical scanner, if cmp layer passes through optical scanner, then can enter
The step of going below, if cmp layer does not carry out optical scanner, then needs continue to trace back, and judge edging process layer
Whether (the bottom wafer and/or device die that have carried out edging technique) has carried out optical scanner, and the rest may be inferred.The present embodiment
In process layer to be judged include cmp layer, edging process layer and be scanned through, its scanning result stores
In data memory module 4.In another embodiment, other layers being scanned through can also be included in step (2).
Step (3)：It whether there is and the target in the process layer that (n >=1, n are integer) is scanned through n-th before judgement
The characteristics defect that defect matches, defect source analysis module 2 can be used for performing this step.For example, it can set to target defect
The individual process layer being scanned through of common m (m >=1, m are integer) is analyzed before the layer of place.
Work as m=1, that is, whether there is and the mesh in the 1st process layer being scanned through before layer where judging target defect
The characteristics defect that mark defect matches, if the result is negative, then the analysis to the source of this target defect terminates, and judges this mesh
Mark defect source is exactly layer where target defect；If result is yes, i.e., the 1st technique being scanned through before layer where target defect
The characteristics defect to match with the target defect in layer be present, then need to continue other warps to before layer where target defect
The process layer of overscanning is compared.
Specifically, existing in the process layer that n-th (n >=1, and n≤m) is scanned through before the layer where the target defect and institute
The characteristics defect that target defect matches is stated, continues (n+1) individual process layer being scanned through before layer where judging target defect
In with the presence or absence of the characteristics defect that matches with target defect, if finding to be not present in a certain process layer being scanned through and the mesh
The characteristics defect that mark defect matches, then the process layer for terminating and judging last matching and corresponding technique are analyzed as this mesh
Mark the source of defect；If the process layer that the need of setting judge exists and the target (before i.e. in the m process layers being scanned through)
The characteristics defect that defect matches, then analysis terminate and judge that the process layer being scanned through of last matching is (or corresponding
Technique) be this target defect source, can also now reset m numerical value and continue step (2)~(3).
In the present embodiment, by the method for data filtering denoising judge in a certain process layer being scanned through whether there is with
The characteristics defect that the target defect matches.Specifically, defect source analysis module 2 includes a data filtering denoising unit 3,
Also, the data filtering denoising method includes following process：
Obtained characteristics defect positional information will be scanned to the process layer before layer where target defect, be integrated into a piece of
In wafer (or same distribution plots).If multiple characteristics defect information be present simultaneously in same position, then only need to remember
The process layer that this position occurs for the first time in this lower piece wafer of record, the positional information of process layer appearance below can eliminate.
The information of the characteristics defect repeated is removed by this method.
In another embodiment of the invention, can be determined whether by the positional information of target defect and characteristics defect
Matching, can specifically there is two ways：
A kind of mode is that the information of the target defect and the characteristics defect includes it in same distribution plots
Abscissa and ordinate, can be by the center at the center and ordinate of either objective defect and the abscissa of any feature defect point
Do not subtract each other, the abscissa difference and ordinate difference at target defect center and characteristics defect center are obtained respectively, if the horizontal seat
The absolute value of mark difference and ordinate difference is within the coordinate tolerance value (tolerance) of setting, then can sentence substantially
Fixed target defect and the characteristics defect matching；
Another way is, can be by the distribution plots of the target defect and the distribution plots of the characteristics defect
It is overlapped, if a certain target defect forms covering relation with a certain characteristics defect or essentially coincided, then can be determined that institute
State the characteristics defect matching of target defect and formed covering relation.
Why determine whether to match by the positional information of target defect and the characteristics defect, be because inventor
It was found that if in technical process a certain process layer existing defects (such as grain defect), if if the defect can cause follow-up
Occurs target defect in process layer, then the coordinate of the target defect is typically same or like with the coordinate of drawbacks described above.
In other embodiments of the invention, it is also an option that other methods are to judge target defect and characteristics defect
No matching, it is not limited to the above-mentioned method enumerated.
The analysis method in the defects of being provided using the present embodiment source, it can substantially obtain each target defect and go out first
Existing process layer (or corresponding technique), you can to obtain the source of target defect.The source-information of target defect can also preserve
The analysis result in target defect source is exported (i.e. in data memory module 4, and by data processing and output module 5
Reach user terminal).
For some situations, for example, when n value terminate or step (2) in covered it is all setting quantity (m) techniques
During layer, then (n-1) individual process layer before source layer as where target defect of the target defect can be set.
As shown in Fig. 2 the analysis system in the defects of the present embodiment source includes：Optic scan module 1, defect source analysis
Module 2, data memory module 4 and data processing and output module 5, wherein defect source analysis module 2 also include a data
Filter denoising unit 3.
Specifically, optic scan module 1, spy is obtained for carrying out optical scanner to the process layer formed based on a certain technique
The information of defect is levied, and/or the information that optical scanner obtains target defect is carried out to the wafer after the multiple techniques of completion；It is described
Area information, coordinate information, dimension information or other information of the information for example including characteristics defect and/or air blister defect, institute
It is, for example, abscissa and ordinate in a wafer distribution plots to state coordinate information.It is understood that for a certain work
Skill layer, it is also possible in the absence of characteristics defect, then only preserve the information of its scanning, judging whether that this process layer whether there is and mesh
As a result it is no that the characteristics defect of mark defect matching, which is,.
Defect source analysis module 2, defect source analysis module, for being carried out according to the analysis method in drawbacks described above source
Analysis obtains the source of the target defect.
In the present embodiment, defect source analysis module 2 also includes a data filtering denoising unit 3, and the data filtering is gone
Unit 3 of making an uproar utilizes data filtering denoising method, several process layers before layer where the information and target defect to target defect
On the information of characteristics defect analyzed, to determine whether the two matches.
Data memory module 4, for preserving the information of the characteristics defect and/or target defect, and target defect
The information in source.In addition data memory module 4 can also store following message：The quantity information of target defect and/or characteristics defect, quilt
Scan the kind and/or batch information, information, the technique (processing procedure) corresponding to scanned process layer of scanned process layer of wafer
Information etc., the invention is not restricted to this.
In the present embodiment, data memory module 4 is connected with light scanning unit 1 to be lacked with preserving characteristics defect and/or target
Sunken information, and data memory module 4 is also connected with defect source analysis module 2 to call characteristics defect and/or target
The information of defect and the analysis result for preserving target defect source.
Data processing and output module 5, are connected with data memory module 4, for according to target defect and/or characteristics defect
Information and/or target defect the output such as source-information towards the chart of user terminal, such as exportable defect schematic diagram, defect
Tendency chart (table) or defect source associated diagram (table) etc..For example exportable air blister defect tendency chart in the present embodiment.The defect
Tendency chart is such as can be the distribution trend figure, volume trends figure, size trend figure of target defect and/or characteristics defect, originally
Invention not limited to this.
In a preferred embodiment of the invention, data processing and output module 5 may include data extracting unit and chart life
Into unit, data extracting unit is connected with data memory module 4, to extract the information of target defect and/or characteristics defect, chart
Generation unit is connected with the data extracting unit, with the information and target defect according to target defect and/or characteristics defect
Information output defect schematic diagram, defect tendency chart or the defect source associated diagram in source etc..
The present embodiment also provides a kind of defect detecting device, includes the analysis system of defect source described above.It is described
Defect detecting device can obtain feature and lack by being scanned to the wafer after a process layer and/or the multiple techniques of completion
Sunken and/or target defect information, such as its positions and dimensions information, are saved in data memory module, and to target defect
Source is analyzed, and the information in the source of target defect can be handled and exported.
It should be noted that embodiment is described by the way of progressive in this specification, in the structures and methods of rear description
What is stressed is all the difference with the structures and methods in preceding description, and the identical and similarity between various pieces is mutual
Mutually referring to.For system disclosed in embodiment or device, due to corresponding to the method disclosed in Example, so retouching
That states is fairly simple, and related part is referring to method part illustration.
In above-described embodiment method and/or system processing, perform, usually in a manner of software program adapting device or
Equipment is implemented, however, they all (or a portion) can also be implemented using the mode of electronic hardware.Either with
Software or hardware mode, its particular is familiar with electronics, software field personnel can be implemented, therefore, its details
Just do not repeat in this manual.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of interest field of the present invention,
Any those skilled in the art without departing from the spirit and scope of the present invention, may be by the methods and techniques of the disclosure above
Content makes possible variation and modification to technical solution of the present invention, therefore, every content without departing from technical solution of the present invention,
Any simple modifications, equivalents, and modifications that technical spirit according to the present invention is made to above example, belong to this hair
The protection domain of bright technical scheme.
Claims (10)
- A kind of 1. analysis method of defect source, it is characterised in that including：(1) optical scanner is carried out to wafer, obtains the information of target defect, the process layer where the wafer is lacked as target Layer where falling into；(2) whether n-th of process layer before layer where judging target defect passes through optical scanner, if it is to be walked to judge Suddenly (3), if judgement is no, n numerical value is added 1, then judge whether corresponding process layer passes through optical scanner；(3) information of the target defect and n-th of process layer before layer where target defect are obtained through optical scanner The information of characteristics defect be compared, n-th of process layer before layer where judging target defect whether there is and the mesh The characteristics defect of defect matching is marked, if it is that the numerical value for making n adds 1 to judge, the step of continuing executing with (2)~(3)；If judgement is no, (n-1) individual process layer before the layer where target defect of the source of the target defect, the analysis terminate；Wherein, n is integer more than or equal to 1, and in step (2) and (3), n is according to order value from small to large.
- 2. the analysis method of defect source as claimed in claim 1, it is characterised in that also include：When n value terminates or walks When having covered the process layer of all setting quantity in (2) suddenly, then before the source of the target defect is layer where target defect (n-1) individual process layer, the analysis terminates.
- 3. the analysis method of defect source as claimed in claim 1, it is characterised in that the target defect and the feature lack Sunken information includes iting abscissa and ordinate in same distribution plots, in step (3), where judging target defect The method that n-th of process layer before layer whether there is the characteristics defect matched with the target defect includes：By either objective The center of the abscissa of defect and any feature defect and the center of ordinate are subtracted each other respectively, respectively obtain target defect center and The abscissa difference and ordinate difference at characteristics defect center, if the absolute value of the abscissa difference and ordinate difference exists Within the coordinate tolerance value of setting, then can be determined that target defect and the characteristics defect matching.
- 4. the analysis method of defect source as claimed in claim 1, it is characterised in that in step (3), pass through data filtering N-th of process layer before layer where the method for denoising judges target defect whether there is the spy to match with the target defect Levy defect.
- 5. the analysis method of defect source as claimed in claim 1, it is characterised in that the target defect lacks including bubble Fall into, the information of the target defect includes the coordinate information and dimension information of air blister defect.
- 6. the analysis method in the source of the defects of as any one of claim 1-5, it is characterised in that the wafer includes bottom Layer crystal member and device die, the bottom wafer and the device die have the surface for contacting with each other and overlapping.
- 7. a kind of analysis system of defect source, perform the analysis side in source the defects of as any one of claim 1-6 Method, it is characterised in that including：Optic scan module, the letter for obtaining characteristics defect for carrying out optical scanner to the process layer formed based on a certain technique Breath, and/or the information that optical scanner obtains target defect is carried out to the wafer after the multiple techniques of completion；Defect source analysis module, the target defect is obtained for carrying out analysis according to the analysis method of the defect source Source；Data memory module, for preserving the information of the characteristics defect and/or the target defect, and target defect comes The information in source；Data processing and output module, the information for calling the target defect source in the data memory module are gone forward side by side line number According to processing and output.
- 8. the analysis system of defect source as claimed in claim 7, it is characterised in that the defect source analysis module includes Data filtering denoising unit, it whether there is for n-th of process layer before layer where judging target defect and lacked with the target The characteristics defect to match is fallen into, wherein, n is the integer more than or equal to 1.
- 9. the analysis system of defect source as claimed in claim 7 or 8, it is characterised in that the data processing and output mould Block includes data extracting unit and chart generation unit, wherein, the data extracting unit is connected with the data memory module, The chart generation unit is connected with the data extracting unit.
- 10. a kind of defect detecting device, it is characterised in that including defect source as claimed in any one of claims 7-9 Analysis system.
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| CN111816582A (en) * | 2020-07-23 | 2020-10-23 | 上海华力微电子有限公司 | Wafer bonding defect position positioning method and manufacturing method of semiconductor device sample |
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