CN112080735A - Tray device for vapor chemical deposition - Google Patents
Tray device for vapor chemical deposition Download PDFInfo
- Publication number
- CN112080735A CN112080735A CN202011083524.3A CN202011083524A CN112080735A CN 112080735 A CN112080735 A CN 112080735A CN 202011083524 A CN202011083524 A CN 202011083524A CN 112080735 A CN112080735 A CN 112080735A
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- tray
- gear
- rotating shaft
- support plate
- linkage
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- 238000005234 chemical deposition Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000012808 vapor phase Substances 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
- 230000001360 synchronised effect Effects 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 5
- 230000007246 mechanism Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a vapor phase chemical deposition tray device, wherein a central shaft linkage gear and a support plate linkage gear are both arranged in a planet tray and are in meshed transmission with each other, one end of a central shaft penetrates into a gear inner hole of the central shaft linkage gear and is in linkage rotation with the central shaft linkage gear, the lower end of a support plate rotating shaft penetrates into a gear inner hole of the support plate linkage gear and is in linkage rotation with the support plate linkage gear, an epitaxial substrate support plate is arranged at the upper end of the support plate rotating shaft and is in linkage rotation with the support plate rotating shaft; in the technical scheme, the self-rotation driving mode of each epitaxial substrate carrier plate is changed from airflow driving into gear driving, so that the rotating speed is more stable and is not influenced by fluctuation and variation of airflow; the gear transmission mechanism of the device is arranged in the planet tray instead of being exposed in reaction gas, so that the possibility of gear clamping stagnation or seizure caused by reaction particle deposition is reduced, and the transmission stability is effectively improved.
Description
Technical Field
The invention relates to the technical field of epitaxial manufacturing materials, in particular to a vapor phase chemical deposition tray device.
Background
The vapor phase chemical deposition (MOCVD) technique is a new vapor phase epitaxy technique using a metal organic compound for metal element transport, and is a technique for transporting a gaseous compound with an epitaxial layer element onto a substrate, and performing a physicochemical reaction on the substrate to obtain a single crystal, which is often used for the production of a compound semiconductor. The ability to mass produce is a significant advantage of MOCVD equipment, and the manner of delivering metal elements in the vapor phase can achieve high delivery efficiency, which makes possible the growth of large-area, uniform epitaxial crystals.
In the process of epitaxial growth on a substrate by adopting a vapor phase chemical deposition technology, the design of a reaction chamber is very critical, and the current mainstream method is to adopt a planetary rotating reaction chamber. In the planetary rotary reaction chamber, the reaction gas is injected into the reaction chamber from the central position of the top of the chamber and spreads axially downward onto the planetary trays. Under the high temperature condition, the reaction gas reacts into the target growth compound on the surface of the substrate and is deposited on the surface of the substrate. The closer to the center of the reaction chamber, the higher the concentration of the reaction gas flow and the reaction temperature, the faster the epitaxial growth speed, which will cause the substrate to grow epitaxially with uneven thickness, which is an important indicator of epitaxial growth.
The existing planetary rotary reactor mostly adopts a substrate carrier plate gas suspension design to ensure the uniformity, and gas flow is injected into a tray during reaction to drive each substrate carrier plate to rotate at high speed, so that the same reaction gas concentration and reaction temperature at each position of an epitaxial substrate are ensured. However, in practical use, the technology has some disadvantages, such as different rotation speeds due to differences of the flow rates of the planetary discs, blockage of the flow channels due to deposited particles, and the like. Also, as the chinese patent application No. 201910892148.3, a gear-linked spin tray device is proposed, but since the linked gear is located on the upper surface of the tray and exposed in the reaction gas, the gear may be stuck or seized due to deposition of reaction particles, which may affect the stability of the device.
Therefore, the prior art still needs to be improved and developed.
Disclosure of Invention
The invention aims to provide a vapor phase chemical deposition tray device, and aims to solve the problem that the stability of the existing self-rotating tray device is affected because a linkage gear is positioned on the upper surface of a tray and exposed in reaction gas and the gear is easy to be blocked or seized due to deposition of reaction particles.
The technical scheme of the invention is as follows: a vapor phase chemical deposition tray device comprises a central shaft, a planet tray, a central shaft linkage gear, a support plate linkage gear, an epitaxial substrate support plate and a support plate rotating shaft, wherein the central shaft linkage gear and the support plate linkage gear are both arranged in the planet tray and are in meshed transmission with each other; the epitaxial substrate carrier plate is arranged in the planet tray, and the top end of the epitaxial substrate carrier plate is flush with the top end of the planet tray.
The vapor phase chemical deposition tray device also comprises a tray rotating shaft, one end of the tray rotating shaft penetrates into an inner hole of the planet tray to rotate together with the planet tray in a linkage manner, and the tray rotating shaft is driven to rotate by external force; a middle hole penetrating through the whole tray rotating shaft along the length direction of the tray rotating shaft is formed in the tray rotating shaft, the central shaft penetrates into the middle hole, and the self-rotation of the central shaft and the self-rotation of the tray rotating shaft are independent.
The vapor phase chemical deposition tray device further comprises a tray rotating gear, wherein the tray rotating gear is arranged on the tray rotating shaft and rotates together with the tray rotating shaft in a linkage mode, and the tray rotating gear is driven to rotate so as to drive the tray rotating shaft to rotate.
The vapor phase chemical deposition tray device further comprises a motor rotating gear, and the motor rotating gear is in transmission connection with the tray rotating gear.
The vapor phase chemical deposition tray device is characterized in that the motor rotating gear and the tray rotating gear are in transmission connection through a synchronous belt.
The vapor phase chemical deposition tray device further comprises a driving motor, and the motor rotating gear is arranged on a motor shaft of the driving motor and rotates together with the motor shaft of the driving motor in a linkage manner.
The vapor phase chemical deposition tray device, wherein, still include the device fixing base that realizes supporting but does not hinder tray rotation axis autogyration to the tray rotation axis, be provided with the mounting hole that runs through whole device fixing base along device fixing base length direction on the device fixing base, the tray rotation axis penetrates in the mounting hole.
The vapor phase chemical deposition tray device is characterized in that the carrier plate linkage gear, the epitaxial substrate carrier plate and the carrier plate rotating shaft are arranged in a plurality and correspond to one another; the plurality of epitaxial substrate support plates are uniformly arranged in the planet tray along the circumferential direction, an epitaxial substrate is loaded on each epitaxial substrate support plate, each epitaxial substrate support plate is driven by a support plate linkage gear and a support plate rotating shaft in a matching mode, and all the support plate linkage gears are in meshing transmission with the central shaft linkage gear.
The invention has the beneficial effects that: the invention provides the vapor phase chemical deposition tray device, the self-rotating driving mode of each epitaxial substrate carrier plate is changed from airflow driving into gear driving, the rotating speed is more stable, and the influence of fluctuation and change of airflow is avoided; the gear transmission mechanism of the device is arranged in the planet tray instead of being exposed in reaction gas, so that the possibility of gear clamping stagnation or seizure caused by reaction particle deposition is reduced, and the transmission stability is effectively improved.
Drawings
FIG. 1 is a schematic structural view of a vapor phase chemical deposition tray apparatus according to the present invention.
Fig. 2 is a partially enlarged view of a portion a in the present invention.
Fig. 3 is a schematic view of a planetary tray and an epitaxial substrate carrier plate in the present invention.
Fig. 4 is a schematic view of an epitaxial substrate carrier plate of the present invention.
Fig. 5 is a schematic view of a carrier plate rotating shaft according to the present invention.
Figure 6 is a schematic view of a central shaft linkage gear according to the present invention.
Fig. 7 is a schematic view of the carrier plate linkage gear of the present invention.
Fig. 8 is a schematic view of the transmission between the central shaft linkage gear and the carrier plate linkage gear in the present invention.
Fig. 9 is a schematic view of the rotation axis of the tray in the present invention.
Fig. 10 is a schematic view of a motor rotating gear in the present invention.
Fig. 11 is a schematic view of a tray rotating gear in the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in fig. 1 to 11, a vapor phase chemical deposition tray device includes a central shaft 12, a planetary tray 1, a central shaft linkage gear 4, a carrier plate linkage gear 5, an epitaxial substrate carrier plate 2 (shown in fig. 4) and a carrier plate rotation shaft 3, wherein the central shaft linkage gear 4 (shown in fig. 6) and the carrier plate linkage gear 5 are both installed in the planetary tray 1 and are in mesh transmission with each other (shown in fig. 8), one end of the central shaft 12 penetrates through a gear bore of the central shaft linkage gear 4 and rotates together with the central shaft linkage gear 4, a lower end of the carrier plate rotation shaft 3 (shown in fig. 5) penetrates through a gear bore of the carrier plate linkage gear 5 and rotates together with the carrier plate linkage gear 5 (shown in fig. 7), and the epitaxial substrate carrier plate 2 is disposed at an upper end of the carrier plate rotation shaft 3 and rotates together with the carrier plate rotation shaft 3; the epitaxial substrate carrier plate 2 is arranged in the planet tray 1, and the top end of the epitaxial substrate carrier plate 2 is flush with the top end of the planet tray 1.
In the technical scheme, the driving mode of self-rotation of each epitaxial substrate carrier plate 2 is changed from airflow driving into gear driving, so that the rotating speed is more stable and is not influenced by fluctuation and change of airflow; the gear transmission mechanism of the device is arranged in the planet tray 1 instead of being exposed in reaction gas, so that the possibility of gear clamping stagnation or seizure caused by reaction particle deposition is reduced, and the transmission stability is effectively improved.
In some embodiments, the vapor deposition tray device further comprises a tray rotating shaft 6 (as shown in fig. 9), one end of the tray rotating shaft 6 penetrates into an inner hole of the planetary tray 1 to rotate together with the planetary tray 1, and the tray rotating shaft 6 is driven to rotate by an external force; a central hole penetrating through the whole tray rotating shaft 6 along the length direction of the tray rotating shaft 6 is formed in the tray rotating shaft 6, the central shaft 12 penetrates into the central hole, and the self-rotation of the central shaft 12 and the self-rotation of the tray rotating shaft 6 are independent.
In some embodiments, the vapor deposition tray device further includes a tray rotating gear 7, the tray rotating gear 7 (shown in fig. 11) is disposed on the tray rotating shaft 6 and rotates together with the tray rotating shaft 6, and the tray rotating gear 7 is driven by the driving device to rotate.
In some embodiments, the vapor deposition tray device further includes a motor rotating gear 8 (as shown in fig. 10) and a driving motor 10, the motor rotating gear 8 is disposed on a motor shaft of the driving motor 10 and rotates in a linkage manner with the motor shaft of the driving motor 10, and the motor rotating gear 8 and the tray rotating gear 7 are in transmission connection through a synchronous belt 9.
In some embodiments, the vapor deposition tray device further includes a device fixing seat 11, a mounting hole penetrating through the entire device fixing seat 11 along a length direction of the device fixing seat 11 is formed in the device fixing seat 11, the tray rotating shaft 6 penetrates into the mounting hole, and the device fixing seat 11 supports the tray rotating shaft 6 without interfering with self-rotation of the tray rotating shaft 6.
In some embodiments, a plurality of epitaxial substrate carriers 2 are disposed on the planetary tray 1, and one epitaxial substrate is loaded on the epitaxial substrate carrier 2.
The operation process of the vapor chemical deposition tray device is as follows:
the driving motor 10 is started, a motor shaft of the driving motor 10 rotates to drive the motor rotating gear 8 to rotate, the motor rotating gear 8 drives the synchronous belt 9 coupled with the motor rotating gear to rotate, the synchronous belt 9 drives the tray rotating gear 7 coupled with the synchronous belt to rotate, the tray rotating gear 7 drives the tray rotating shaft 6 coupled with the tray rotating gear to rotate, and the tray rotating shaft 6 drives the planetary tray 1 on the tray rotating shaft to rotate.
The central shaft 12 starts to rotate automatically under the driving of external power to drive the central shaft linkage gear 4 fixed on the central shaft linkage gear to rotate synchronously, the central shaft linkage gear 4 drives the carrier plate linkage gear 5 meshed with the central shaft linkage gear to rotate, the carrier plate linkage gear 5 drives the carrier plate rotating shaft 3 coupled with the carrier plate to rotate, the carrier plate rotating shaft 3 drives the epitaxial substrate carrier plate 2 on the carrier plate to rotate automatically, and the epitaxial substrate carrier plate 2 drives the epitaxial substrate on the carrier plate to rotate synchronously.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Reference numerals:
a planet tray 1; an epitaxial substrate carrier 2; a carrier plate rotating shaft 3; a central shaft linkage gear 4; a carrier plate linkage gear 5; a tray rotating shaft 6; a tray rotating gear 7; a motor rotating gear 8; a timing belt 9; a drive motor 10; a device fixing base 11; a central shaft 12.
Claims (8)
1. A vapor phase chemical deposition tray device is characterized by comprising a central shaft (12), a planet tray (1), a central shaft linkage gear (4), a support plate linkage gear (5), an epitaxial substrate support plate (2) and a support plate rotating shaft (3), wherein the central shaft linkage gear (4) and the support plate linkage gear (5) are both arranged in the planet tray (1) and are in meshed transmission with each other, one end of the central shaft (12) penetrates through a gear inner hole of the central shaft linkage gear (4) and rotates in linkage with the central shaft linkage gear (4), the lower end of the support plate rotating shaft (3) penetrates through the gear inner hole of the support plate linkage gear (5) and rotates in linkage with the support plate linkage gear (5), and the epitaxial substrate support plate (2) is arranged at the upper end of the support plate rotating shaft (3) and rotates in linkage with the support plate rotating shaft (3); the epitaxial substrate carrier plate (2) is arranged in the planet tray (1), and the top end of the epitaxial substrate carrier plate (2) is flush with the top end of the planet tray (1).
2. The vapor phase chemical deposition tray device according to claim 1, further comprising a tray rotating shaft (6), wherein one end of the tray rotating shaft (6) penetrates into an inner hole of the planetary tray (1) to rotate together with the planetary tray (1) in a linkage manner, and the tray rotating shaft (6) is driven to rotate by external force; a middle hole penetrating through the whole tray rotating shaft (6) along the length direction of the tray rotating shaft (6) is formed in the tray rotating shaft (6), the central shaft (12) penetrates into the middle hole, and the self-rotation of the central shaft (12) and the self-rotation of the tray rotating shaft (6) are mutually independent.
3. The vapor phase chemical deposition tray device according to claim 2, further comprising a tray rotating gear (7), wherein the tray rotating gear (7) is arranged on the tray rotating shaft (6) and rotates together with the tray rotating shaft (6) in a linkage manner, and the tray rotating gear (7) is driven to rotate so as to drive the tray rotating shaft (8) to rotate.
4. A vapor chemical deposition tray device according to claim 3, characterized by further comprising a motor rotating gear (8), wherein the motor rotating gear (8) is in transmission connection with the tray rotating gear (7).
5. A vapor chemical deposition tray device according to claim 4, characterized in that the motor rotating gear (8) and the tray rotating gear (7) are in transmission connection through a synchronous belt (9).
6. The vapor chemical deposition tray device according to claim 5, further comprising a driving motor (10), wherein the motor rotating gear (8) is provided on a motor shaft of the driving motor (10) and rotates in conjunction with the motor shaft of the driving motor (10).
7. The vapor chemical deposition tray device according to claim 2, further comprising a device fixing seat (11) for supporting the tray rotating shaft (6) without preventing the tray rotating shaft (6) from rotating, wherein a mounting hole penetrating through the whole device fixing seat (11) along the length direction of the device fixing seat (11) is formed in the device fixing seat (11), and the tray rotating shaft (6) penetrates into the mounting hole.
8. The vapor phase chemical deposition tray device according to claim 1, wherein the carrier plate linkage gear (5), the epitaxial substrate carrier plate (2) and the carrier plate rotating shaft (3) are provided in plurality and in one-to-one correspondence; a plurality of epitaxial substrate support plates (2) are uniformly arranged in a planetary tray (2) along the circumferential direction, an epitaxial substrate is loaded on each epitaxial substrate support plate (2), each epitaxial substrate support plate (2) is driven by a support plate linkage gear (5) and a support plate rotating shaft (3) in a matching mode, and all the support plate linkage gears (5) are in meshing transmission with a central shaft linkage gear (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011083524.3A CN112080735A (en) | 2020-10-12 | 2020-10-12 | Tray device for vapor chemical deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011083524.3A CN112080735A (en) | 2020-10-12 | 2020-10-12 | Tray device for vapor chemical deposition |
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| Publication Number | Publication Date |
|---|---|
| CN112080735A true CN112080735A (en) | 2020-12-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011083524.3A Pending CN112080735A (en) | 2020-10-12 | 2020-10-12 | Tray device for vapor chemical deposition |
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| CN (1) | CN112080735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115652417A (en) * | 2022-12-28 | 2023-01-31 | 埃特曼(苏州)半导体技术有限公司 | Device and method for optimizing film epitaxial growth uniformity and epitaxial growth equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124013A (en) * | 1988-02-08 | 1992-06-23 | Optical Coating Laboratory, Inc. | High ratio planetary drive system and method for vacuum chamber |
| KR20030070747A (en) * | 2002-02-26 | 2003-09-02 | 주식회사 아펙스 | MOCVD Reactor having a Planetary Gear Structure |
| CN103556130A (en) * | 2013-11-07 | 2014-02-05 | 北京希睿思科技有限公司 | Mechanical autorotating MOCVD (metalorganic chemical vapor deposition) accessory substrate tray |
| CN203613261U (en) * | 2013-11-07 | 2014-05-28 | 北京希睿思科技有限公司 | Mechanical autorotation MOCVD (metal organic chemical vapor deposition) auxiliary substrate tray |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| CN211471545U (en) * | 2019-09-20 | 2020-09-11 | 深圳第三代半导体研究院 | Chemical vapor deposition planet tray device |
-
2020
- 2020-10-12 CN CN202011083524.3A patent/CN112080735A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124013A (en) * | 1988-02-08 | 1992-06-23 | Optical Coating Laboratory, Inc. | High ratio planetary drive system and method for vacuum chamber |
| KR20030070747A (en) * | 2002-02-26 | 2003-09-02 | 주식회사 아펙스 | MOCVD Reactor having a Planetary Gear Structure |
| CN103556130A (en) * | 2013-11-07 | 2014-02-05 | 北京希睿思科技有限公司 | Mechanical autorotating MOCVD (metalorganic chemical vapor deposition) accessory substrate tray |
| CN203613261U (en) * | 2013-11-07 | 2014-05-28 | 北京希睿思科技有限公司 | Mechanical autorotation MOCVD (metal organic chemical vapor deposition) auxiliary substrate tray |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| CN211471545U (en) * | 2019-09-20 | 2020-09-11 | 深圳第三代半导体研究院 | Chemical vapor deposition planet tray device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115652417A (en) * | 2022-12-28 | 2023-01-31 | 埃特曼(苏州)半导体技术有限公司 | Device and method for optimizing film epitaxial growth uniformity and epitaxial growth equipment |
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Application publication date: 20201215 |