CN112080732B - 一种硅集成的bt-bmz薄膜、电容器及其制造方法 - Google Patents
一种硅集成的bt-bmz薄膜、电容器及其制造方法 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000007704 transition Effects 0.000 claims abstract description 47
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 86
- 239000010409 thin film Substances 0.000 claims description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000004146 energy storage Methods 0.000 abstract description 38
- 239000010410 layer Substances 0.000 description 44
- 238000002360 preparation method Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
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- 230000008021 deposition Effects 0.000 description 3
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- 238000009776 industrial production Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
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- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
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- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
本发明公开了一种硅集成的BT‑BMZ薄膜、电容器及其制造方法，薄膜电容器包括Si基片、HAO过渡层和BT‑BMZ薄膜，HAO过渡层设置于Si基片表面，BT‑BMZ薄膜设置于HAO过渡层表面，Pt电极设置于Si基片BT‑BMZ薄膜表面；制造方法，包括以下过程：采用原子层沉积方法在Si基片上生长HAO过渡层；采用射频磁控溅射方法在HAO过渡层上生长BT‑BMZ薄膜，射频磁控溅射完成后进行退火；采用溅射镀膜方法在Si基片和BT‑BMZ薄膜上沉积Pt电极，得到所述硅集成的BT‑BMZ薄膜电容器。本发明的薄膜电容器大幅度提升了硅基片上薄膜电容器的储能密度，其储能效率和温度稳定性也维持在较高水平。
Description
技术领域
本发明涉及固体电容器及其制造方法领域，特别是薄膜或厚膜电容器，具体涉及一种硅集成的BT-BMZ薄膜、电容器及其制造方法。
背景技术
随着传统化石能源的日益枯竭和可再生能源的发展，能源存储技术已成为当前科学技术研究的重要发展方向。对于储能材料与器件，相较于燃料电池、锂离子电池和超级电容器，介电电容器凭借其高功率密度、高可靠性、快速充放电与低成本等特在能量存储领域表现出了明显的优势。同时，随着近年来电子设备的便携化和多功能化的发展趋势，具有维度低、质量轻等优点的薄膜材料及器件，尤其是可集成于半导体硅片上的薄膜材料与器件，在集成电路的设计与发展中表现出巨大的优势。性能优良且小型化的硅集成介电薄膜电容器已成为当今的一大研究热点。
储能密度和储能效率是表征介电电容器储能特性的两大的重要参数，如何进一步提高材料的储能密度并保持优良的储能效率及温度稳定性，是介电薄膜电容器研究领域中需要不断解决的问题。
发明内容
为解决现有技术中存在的问题，本发明的目的是提供一种硅集成的BT-BMZ薄膜、电容器及其制造方法，本发明能够提高薄膜电容器的储能密度并保持优良的储能效率及温度稳定性。
本发明采用的技术方案如下：
一种硅集成的BT-BMZ薄膜，包括Si基片、8Al2O3:96HfO2过渡层和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜，8Al2O3:96HfO2过渡层设置于Si基片表面，0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜设置于8Al2O3:96HfO2过渡层表面。
优选的，所述Si基片为硼元素掺杂的P型(100)取向的Si基片。
优选的，所述8Al2O3:96HfO2过渡层的厚度为10-100nm。
优选的，所述0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜的厚度为50-900nm。
本发明上述硅集成的BT-BMZ薄膜的制造方法，包括以下过程：
采用原子层沉积方法在Si基片上生长8Al2O3:96HfO2过渡层；
采用射频磁控溅射方法在8Al2O3:96HfO2过渡层上生长0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜，射频磁控溅射完成后进行退火，得到所述硅集成的BT-BMZ薄膜电容器；
其中，射频磁控溅射采用0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3陶瓷靶材，磁控溅射腔内的本底真空度优于10-5mbar，工作气体为氩气与氧气的混合气体。
优选的，采用射频磁控溅射方法在8Al2O3:96HfO2过渡层上生长0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜时，溅射气压为0.2mbar，射频溅射功率为100W，衬底温度为700℃，靶材与衬底的距离为55mm。
优选的，进行退火时，向磁控溅射腔内通入混合气体，使真空度至200mbar，并在该真空度及700℃温度下保温15min，随后缓慢冷却至室温，得到所述硅集成的BT-BMZ薄膜，所述混合气体由氩气与氧气按照体积比1：1混合而成。
本发明提供的硅集成的BT-BMZ薄膜电容器，包括电极以及本发明上述的硅集成的BT-BMZ薄膜，所述电极设置于硅集成的BT-BMZ薄膜的Si基片和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜表面。
优选的，所述电极采用Pt电极。
本发明上述硅集成的BT-BMZ薄膜电容器的制造方法，包括硅集成的BT-BMZ薄膜的制备以及电极的制备，硅集成的BT-BMZ薄膜的制备过程采用本发明上述硅集成的BT-BMZ薄膜的制造方法；制备电极时，采用溅射镀膜方法在硅集成的BT-BMZ薄膜的Si基片和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜上沉积电极材料，得到电极。
本发明具有以下有益的有益效果：
本发明硅集成的BT-BMZ薄膜中，通过在Si基片和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜之间设置8Al2O3:96HfO2过渡层，能够提高BT-BMZ薄膜的储能特性。首先，8Al2O3:96HfO2过渡层可以解决0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3铁电薄膜和Si基片之间相互扩散的问题，降低界面中的缺陷，改善界面特性；同时，由于8Al2O3:96HfO2过渡层与0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3层之间的层间电荷耦合，产生退极化场，使得0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜的击穿场强得到提高。从而，本发明的BT-BMZ薄膜能够大幅度提升硅基片上薄膜的储能密度，其储能效率和温度稳定性也维持在较高水平。此外，本发明的BT-BMZ薄膜集成于Si基片上，可广泛地应用于半导体集成电路中的电容器。同时，本发明的BT-BMZ薄膜所用材料不含铅，符合当今工业生产中对环境保护的要求。
进一步的，Si基片为硼元素掺杂的P型(100)取向的Si基片，所述Si基片为当今集成电路生产中普遍使用的半导体衬底，使得本发明的BT-BMZ薄膜可以广泛应用于半导体集成电路中的电容器。
进一步的，8Al2O3:96HfO2过渡层的厚度为10-100nm，在该厚度范围内，HAO(8Al2O3:96HfO2的简称)过渡层可以有效阻挡0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3铁电薄膜和Si基片之间的固-固扩散；同时，在该厚度范围内，相对介电常数较低的HAO过渡层在BT-BMZ/HAO结构中所占的体积比小，不至导致BT-BMZ/HAO的整体介电常数较BT-BMZ薄膜发生大幅度下降。
进一步的，0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜的厚度为50-900nm，纳米级的薄膜厚度符合半导体集成电路小型化的需要。
本发明硅集成的BT-BMZ薄膜的制造方法，主要采用射频磁控溅射方法，生长的BT-BMZ薄膜沉积层具有均匀的厚度和优异的组分一致性，以此为基础制得的BT-BMZ薄膜性能稳定。
进一步的，采用射频磁控溅射方法在8Al2O3:96HfO2过渡层上生长0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜时，溅射气压为0.2mbar，射频溅射功率为100W，衬底温度为700℃，靶材与衬底的距离为55mm，在所述生长条件下获得适当的薄膜沉积速率，具体为15.82nm/h，这样能获得表面粗糙度较低的BT-BMZ薄膜。
进一步的，进行退火时，向磁控溅射腔内通入混合气体，使真空度至200mbar，并在该真空度及700℃温度下保温15min，随后缓慢冷却至室温，得到所述硅集成的BT-BMZ薄膜，所述混合气体由氩气与氧气按照体积比1：1混合而成，富氧的退火环境可以减少薄膜中的氧空位，确保制得的薄膜具有良好的结晶质量，进而获得优良的储能特性。
本发明硅集成的BT-BMZ薄膜电容器由于有本发明上述硅集成的BT-BMZ薄膜，因此本发明的硅集成的BT-BMZ薄膜电容器的储能密度大幅提升，其储能效率和温度稳定性也维持在较高水平。此外，本发明的BT-BMZ薄膜电容器集成于Si基片上，可广泛地应用于半导体集成电路中。同时，本发明的BT-BMZ薄膜电容器所用材料不含铅，符合当今工业生产中对环境保护的要求。
附图说明
图1是本发明实施例硅集成的BT-BMZ薄膜电容器的截面结构示意图。
图2是不含HAO过渡层的BT-BMZ薄膜电容器与本发明实施例硅集成的含HAO过渡层的BT-BMZ薄膜电容器在25℃工作环境下的储能密度及储能效率对比图。
图3是本发明实施例硅集成的BT-BMZ薄膜电容器在-100℃～150℃范围内的储能密度及储能效率图。
具体实施方式
下面结合附图和具体实施例，对本发明作进一步阐释。
参照图1，本发明硅集成的BT-BMZ薄膜电容器，包括电极以及本发明的硅集成的BT-BMZ薄膜，本发明的硅集成的BT-BMZ薄膜包括Si基片、8Al2O3:96HfO2过渡层和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜，8Al2O3:96HfO2过渡层设置于Si基片表面，0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜设置于8Al2O3:96HfO2过渡层表面，所述电极设置于Si基片和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜表面。其中，电极可采用Pt电极。
作为发明优选的实施方案，本发明的上述薄膜电容器中，Si基片为硼元素掺杂的P型(100)取向的Si基片；8Al2O3:96HfO2过渡层的厚度为10-100nm，优选厚度为14.5nm；0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜的厚度为50-900nm，优选厚度为400nm。
本发明硅集成的BT-BMZ薄膜电容器的制造方法，包括硅集成的BT-BMZ薄膜的制备以及电极的制备，具体包括如下步骤。
(1)Si基片处理
将Si基片依次浸入氢氟酸、去离子水中，进行清洗，去除Si基片表面的杂质和自然氧化层，再用高压氮气将其吹干后送入原子层沉积设备的真空沉积室，置于样品台上。
(2)8Al2O3:96HfO2(可简称为HAO)过渡层的制备(其中，8Al2O3:96HfO2中，8Al2O3与96HfO2之间用“:”，表示Al2O3与HfO2交替生长)
采用原子层沉积方法在Si基片上生长预设厚度的HAO过渡层。
(3)BT-BMZ(0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3的简称)薄膜的制备(其中，0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3中，0.85BaTiO3和0.15Bi(Mg0.5Zr0.5)O3之间用“-”，表示BaTiO3与Bi(Mg0.5Zr0.5)O3固相均匀混合)
采用射频磁控溅射方法在HAO过渡层上生长预设厚度的BT-BMZ薄膜。射频磁控溅射采用BT-BMZ陶瓷靶材，磁控溅射腔内的本底真空度优于10-5mbar，工作气体为氩气与氧气的混合气体，调节溅射气压、射频溅射功率、衬底温度和靶材到衬底的距离，经过预设时间的溅射并进行退火，得到所述硅集成的BT-BMZ薄膜电容器。其中，射频磁控溅射气压为0.2mbar，射频溅射功率为100W，衬底温度为700℃，靶材与衬底的距离为55mm；BT-BMZ薄膜生长结束后，向磁控溅射腔内通入混合气体至200mbar，并在该气压及700℃温度下保温15min，随后缓慢冷却至室温；射频磁控溅射生长BT-BMZ薄膜过程中，所用混合气体由氩气与氧气按照体积比1：1混合而成。所述氩气的纯度为99.999％，氧气的纯度为99.999％；
(4)Pt电极的制备
采用溅射镀膜方法在BT-BMZ薄膜上沉积预设厚度的Pt层，作为电极。
实施例
本实施例的硅集成的BT-BMZ薄膜电容器的制造方法，包括如下步骤：
(1)Si基片处理
选取用硼元素掺杂的P型(100)Si基片，用金刚石笔将基片切割为所需尺寸，即5mm*10mm大小。将切割好的基片短暂浸入体积分数2％的氢氟酸中，去除Si基片表面的SiO2氧化层及其他杂质；随后用去离子水进行快速冲洗，以去除残留的氢氟酸；再用高压氮气将基片吹干后送入原子层沉积设备的真空沉积室，置于样品台上。
(2)过渡层制备
采用原子层沉积方法在Si基片上生长预设厚度的HAO过渡层。采用如表1所示的条件，改变HfO2循环和Al2O3循环的沉积顺序在Si基片上生长HfO2:Al2O3循环比为96:8的HAO过渡层，厚度为14.5nm。
表1
(3)BT-BMZ薄膜制备
将BT-BMZ的陶瓷靶材依次用1200目、3000目、5000目砂纸打磨至光滑平整，再用高压氮气清洁表面后，将靶材安装到磁控溅射系统中。向磁控溅射腔内充入氩气与氧气的混合气体至0.2mbar，在室温条件下进行10～12h预溅射，以除去BT-BMZ陶瓷靶材表面的杂质。
采用射频磁控溅射技术在8Al2O3:96HfO2过渡层上生长预设厚度的BT-BMZ薄膜，采用如表2所示的条件，溅射时间25h17min，所制得BT-BMZ薄膜厚度是400nm。
表2
(4)Pt电极制备
将生长在硅基片上的BT-BMZ/HAO/Si样品进行部分打磨，选用100目的方孔铜网(孔径200μm)作为掩膜版，采用溅射镀膜方法在BT-BMZ/HAO/Si样品上沉积一层Pt，作为电极，溅射时间15分钟。
至此，本实施例制造得到硅集成的BT-BMZ薄膜电容器，所述电容器截面结构示意图如图1所示，电容器中HAO过渡层厚度为14.5nm，BT-BMZ层厚度为400nm，Pt电极厚度为100nm。
将本实施例制备的薄膜电容器放置于探针台上，控制探针台温度，使用铁电工作站对电容器的电性能进行测试。
图2为不含HAO过渡层的BT-BMZ薄膜电容器与本实施例硅集成的含HAO过渡层的BT-BMZ薄膜电容器在25℃工作环境下的储能密度及储能效率对比图。图2表明，通过HAO过渡层的设计使得薄膜电容器的储能密度较不含HAO过渡层的薄膜电容器有明显提高。在25℃的工作温度下，本实施例的电容器的储能密度可达85.73J/cm3，同时储能效率在73.69％以上，均达到了较高的水平。
附图3为本发明实施例1集成于硅基片上含HAO过渡层的BT-BMZ薄膜电容器在-100℃～150℃范围内的储能密度及储能效率图。图3表明本实施例的薄膜样品在-100℃到150℃温度范围内，仍然具有优异的储能特性。150℃时，在4.58MV/cm电场下，储能密度可达49.56J/cm3，储能效率69.54％。
从上述结果可以看出，本发明通过HAO过渡层的设计使得硅基片上的BT-BMZ薄膜电容器具有较高的储能密度，同时储能效率和温度稳定性也保持在较高水平，其储能密度较不含HAO过渡层的薄膜电容器有大幅度提高。
本发明的集成于硅基片上含HAO过渡层的BT-BMZ薄膜电容器具有以下几个方面的优点：
(1)本发明进行结构设计，通过插入HAO过渡层，大幅度提升了硅基片上薄膜电容器的储能密度，其储能效率和温度稳定性也维持在较高水平。
(2)本发明的薄膜电容器集成于Si基片上，可广泛地应用于半导体集成电路中。
(3)本发明的薄膜电容器所用材料不含铅，符合当今工业生产中对环境保护的要求。
Claims (7)
1.一种硅集成的BT-BMZ薄膜，其特征在于，包括Si基片、8Al2O3:96HfO2过渡层和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜，8Al2O3:96HfO2过渡层设置于Si基片表面，0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜设置于8Al2O3:96HfO2过渡层表面；
所述8Al2O3:96HfO2过渡层的厚度为10-100nm；
所述0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜的厚度为50-900nm；
所述Si基片为硼元素掺杂的P型(100)取向的Si基片；
8Al2O3:96HfO2过渡层表示Al2O3与HfO2以循环比为8:96进行交替生长得到的过渡层。
2.权利要求1所述硅集成的BT-BMZ薄膜的制造方法，其特征在于，包括以下过程：
采用原子层沉积方法在Si基片上生长8Al2O3:96HfO2过渡层；
采用射频磁控溅射方法在8Al2O3:96HfO2过渡层上生长0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜，射频磁控溅射完成后进行退火，得到所述硅集成的BT-BMZ薄膜电容器；
其中，射频磁控溅射采用0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3陶瓷靶材，磁控溅射腔内的本底真空度优于10-5mbar，工作气体为氩气与氧气的混合气体。
3.根据权利要求2所述的一种硅集成的BT-BMZ薄膜的制造方法，其特征在于，采用射频磁控溅射方法在8Al2O3:96HfO2过渡层上生长0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜时，溅射气压为0.2 mbar，射频溅射功率为100W，衬底温度为700℃，靶材与衬底的距离为55mm。
4.根据权利要求2所述的一种硅集成的BT-BMZ薄膜的制造方法，其特征在于，进行退火时，向磁控溅射腔内通入混合气体，使真空度至200mbar，并在该真空度及700℃温度下保温15min，随后缓慢冷却至室温，得到所述硅集成的BT-BMZ薄膜，所述混合气体由氩气与氧气按照体积比1：1混合而成。
5.一种硅集成的BT-BMZ薄膜电容器，其特征在于，包括电极以及权利要求1所述的硅集成的BT-BMZ薄膜，所述电极设置于硅集成的BT-BMZ薄膜的Si基片和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜表面。
6.根据权利要求5所述的一种硅集成的BT-BMZ薄膜电容器，其特征在于，所述电极采用Pt电极。
7.权利要求5或6所述硅集成的BT-BMZ薄膜电容器的制造方法，其特征在于，包括硅集成的BT-BMZ薄膜的制备以及电极的制备，硅集成的BT-BMZ薄膜的制备过程采用权利要求2-4任意一项所述硅集成的BT-BMZ薄膜的制造方法；制备电极时，采用溅射镀膜方法在硅集成的BT-BMZ薄膜的Si基片和0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3薄膜上沉积电极材料，得到电极。
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| CN1441496A (zh) * | 2002-02-28 | 2003-09-10 | 三星电子株式会社 | 半导体器件用电容器、其制造方法及采用它的电子器件 |
| WO2006028215A1 (ja) * | 2004-09-09 | 2006-03-16 | Tokyo Electron Limited | 薄膜キャパシタ及びその形成方法、及びコンピュータ読み取り可能な記憶媒体 |
| CN106783174A (zh) * | 2016-12-20 | 2017-05-31 | 上海集成电路研发中心有限公司 | 一种用于铁电存储器的铁电薄膜电容及其制造方法 |
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