CN112078198A - 一种金刚石铜/铜复合板及其制备方法和应用 - Google Patents
一种金刚石铜/铜复合板及其制备方法和应用 Download PDFInfo
- Publication number
- CN112078198A CN112078198A CN202010994245.6A CN202010994245A CN112078198A CN 112078198 A CN112078198 A CN 112078198A CN 202010994245 A CN202010994245 A CN 202010994245A CN 112078198 A CN112078198 A CN 112078198A
- Authority
- CN
- China
- Prior art keywords
- copper
- diamond
- carbide
- sheet
- composite board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010949 copper Substances 0.000 title claims abstract description 169
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 169
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 168
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 96
- 239000010432 diamond Substances 0.000 title claims abstract description 96
- 239000002131 composite material Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000007781 pre-processing Methods 0.000 claims abstract description 14
- 238000012805 post-processing Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 239000011265 semifinished product Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 claims description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- 229910039444 MoC Inorganic materials 0.000 claims description 2
- 229910026551 ZrC Inorganic materials 0.000 claims description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000007731 hot pressing Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 238000002490 spark plasma sintering Methods 0.000 claims description 2
- 229910003470 tongbaite Inorganic materials 0.000 claims description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 8
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000012858 packaging process Methods 0.000 abstract description 3
- 238000004100 electronic packaging Methods 0.000 abstract description 2
- 239000005022 packaging material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 229910015269 MoCu Inorganic materials 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
- B32B37/1018—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using only vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/04—Punching, slitting or perforating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/16—Drying; Softening; Cleaning
- B32B38/162—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/002—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising natural stone or artificial stone
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/04—Punching, slitting or perforating
- B32B2038/045—Slitting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/302—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Fluid Mechanics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明公开了一种金刚石铜/铜复合板及其制备方法和应用，属于电子封装材料技术领域。本发明通过预加工、装配、连接、后加工四个步骤，将交替放置的金刚石铜薄板和铜薄板连接成为一体，得到金刚石铜/铜复合板；在预加工步骤中对金刚石铜薄板和铜薄板进行镂空加工，得到带有通道的微通道或宏通道热沉（或散热器）；相比普通无氧铜微通道或宏通道热沉（或散热器），本发明制备的金刚石铜/铜复合板具有热导率和抗弯强度更高、热膨胀系数与半导体芯片匹配的特点，封装结构和封装工艺进一步简化，半导体器件的散热能力、可靠性和质量稳定性明显提高。
Description
技术领域
本发明涉及一种金刚石铜/铜复合板及其制备方法和应用，尤其涉及一种带有通道的金刚石铜薄板与铜薄板交替排列的复合板及其制备方法和应用，属于电子封装材料技术领域。
背景技术
散热问题已经成为影响功率半导体、激光二极管、大功率LED、超算芯片等半导体功率器件工作效率、可靠性和使用寿命的最大杀手之一。无氧铜材质的微通道和宏通道热沉（或散热器）是将多层无氧铜薄板利用自扩散或压力焊的方法结合在一起得到的一种带有通道的热沉（或散热器）。由于这类热沉（或散热器）具有体积小、散热效率高的特点，在功率半导体和激光二极管领域已经得到了比较广泛的应用。
但是，这种热沉（或散热器）存在三个方面的问题：第一，无氧铜的热导率仅为380~400 W/mK，无法满足大功率半导体器件更高散热效率的需要；第二，由于无氧铜的热膨胀系数为16.5~17.0×10-6/K，与半导体芯片的热膨胀系数之间存在较大的失配，因此通常还需要在二者之间加一层WCu、MoCu、AlN、BeO、SiC/Al等材料作为过渡，不仅延长了散热路径，而且也增加了封装结构和工艺的复杂性，给封装产品的稳定性带来影响，同时也增加了成本，增加的WCu、MoCu、AlN、BeO、SiC/Al等过渡材料与微通道或宏通道热沉（或散热器）的无氧铜之间依然存在热膨胀系数不匹配而产生热应力；第三，无氧铜的抗弯强度比较低，特别是经过回流焊接后，强度会进一步降低，不可避免地会出现弯曲变形，给芯片的封装和质量的一致性以及可靠性带来不利影响。
金刚石铜材料，即金刚石颗粒增强铜基复合材料，由于热导率远远高于现有WCu、MoCu、SiC/Al材料，热膨胀系数可通过控制金刚石体积含量调节至与半导体芯片或陶瓷基板匹配，且抗弯强度高于无氧铜，近年来受到相关科研机构和企业的广泛关注。但是，由于该材料是以自然界中硬度最高的金刚石作为增强相，使得该材料的加工问题成为限制其广泛应用的障碍，因此目前还没有用金刚石铜材料制作微通道或宏通道热沉（或散热器）的报道。
发明内容
本发明的目的是解决目前微通道和宏通道热沉（或散热器）存在的热导率不高、热膨胀系数与半导体芯片不匹配、抗弯强度较低问题，简化封装结构和封装工艺，提升半导体器件的散热能力，从而提升可靠性和质量稳定性。
为实现上述目的，本发明采用的技术方案是：一种金刚石铜/铜复合板及其制备方法和应用，其特征在于该金刚石铜/铜复合板由总层数为奇数且不少于3层的金刚石铜薄板（1）、铜薄板（2）互相交替组成，且两侧的最外层为金刚石铜薄板（1），其制备方法以下步骤：第一步，预加工：包括金刚石铜薄板（1）的预加工和/或铜薄板（2）的预加工，所述预加工包括整平、表面研磨、镂空加工、清洗、镀膜中的一个或多个工序；第二步，装配：将预加工好的金刚石铜薄板（1）和铜薄板（2）按照金刚石铜薄板（1）、铜薄板（2）互相交替的顺序依次整齐地叠放在一起，且叠放后最外侧为金刚石铜薄板（1），得到总叠放层数为不少于3层的奇数层的装配体；第三步，连接：采用电阻焊、缝焊、热扩散、压力焊、真空热压烧结、放电等离子体烧结中的一种或多种将上述装配体连接成为一个整体，得到金刚石铜/铜复合板半成品；第四步，后加工：将上述金刚石铜/铜复合板半成品进行切割、整平、研磨、清洗、镀膜中的一个或多个工序处理后，即得金刚石铜/铜复合板。
金刚石铜薄板（1）为表面镀膜或不镀膜的金刚石颗粒增强铜基复合材料，厚度为0.05~10mm；当表面镀膜时，所述表面镀膜为钛、铬、钨、锆、铌、钒、硅、硼、钼中的一种或多种薄膜，厚度为1~1000nm；金刚石粒径为10~200μm，金刚石体积分数为10%~90%；铜基体为纯铜或铜合金；当所述铜基体为铜合金时，铜合金为含有钛、铬、钨、锆、铌、钒、硅、硼、钼、碲、硒、铁、锂、稀土金属中的一种或多种的铜合金，合金元素质量分数为0.05%~10%；金刚石颗粒与金属基体之间还存在1~5000nm厚的碳化物层，所述碳化物为碳化钛、碳化铬、碳化钨、碳化锆、碳化铌、碳化钒、碳化硅、碳化硼、碳化钼中的一种或多种。
铜薄板（2）为纯铜或铜合金，厚度为0.05~10mm；当铜薄板（2）为铜合金时，该铜合金含有钛、铬、钨、锆、铌、钒、硅、硼、钼、碲、硒、铁、锂、稀土金属中的一种或多种的铜合金，合金元素质量分数为0.05%~10%。
上述金刚石铜/铜复合板的应用，该金刚石铜/铜复合板用于功率半导体、激光二极管、大功率LED、运算芯片的微通道或宏通道的热沉（或散热器）。
本发明的有益之处在于，本发明的一种金刚石铜/铜复合板是将金刚石铜材料和铜利用电阻焊、缝焊、热扩散或压力焊的方法连接而成，层间结合强度高；通过在每一单层加工不同形状的镂空结构，可进一步得到带有通道的微通道和宏通道热沉（或散热器），进一步提高了现有微通道和宏通道热沉（或散热器）的热导率和抗弯强度；表层的金刚石铜材料热膨胀系数与半导体芯片匹配，省去了额外WCu、MoCu、AlN、BeO、SiC/Al等材料作为过渡，简化封装结构和封装工艺，导热路径更短，提升半导体器件的散热能力，从而提升可靠性和质量稳定性；所采用的制备方法均为常用制备加工方法，成本低、设备投入低，适合大范围推广应用。
附图说明
图1为本发明的工艺流程图。
图2为金刚石铜/铜三层复合板结构示意图。
图3为带有通道的金刚石铜/铜三层复合板结构示意图。
图4为金刚石铜/铜五层复合板结构示意图。
图5为带有通道的金刚石铜/铜五层复合板结构示意图。
附图标记说明：1—金刚石铜薄板；2—铜薄板。
实施例
下面结合附图和实施例对本发明进行详细说明。需要注意的是，以下仅仅是本发明的较佳实施例，并非对本发明作任何限制，凡是根据本发明技术实质对以上实施例所做的任何简单修改、变更以及等效结构变化，均仍属于本发明技术方案的保护范围内。
实施例1
采用图1所示的工艺流程制备三层金刚石铜/铜复合板。具体过程为：第一步，预加工：将尺寸为11.1×25.1×0.4和11.1×25.1×0.1的金刚石铜薄板（1）（金刚石粒径40μm、金刚石体积分数60%、基体为含Cr为1.5%的CuCr合金）和铜薄板（2）（无氧铜）分别进行整平、表面研磨加工并清洗干净；第二步，装配：将预加工好的金刚石铜薄板（1）和铜薄板（2）按照金刚石铜薄板（1）、铜薄板（2）、金刚石铜薄板（1）的顺序依次交替整齐地叠放在一起，且叠放后最外侧为金刚石铜薄板（1），得到总叠放层数为3层装配体；第三步，连接：采用电阻焊的方法将上述装配体连接成为一个整体，具体工艺为压力20kN，电流20000A，通电时间15s，得到金刚石铜/铜复合板半成品；第四步，后加工：将上述金刚石铜/铜复合板半成品进行整平、研磨、清洗后，即得图2所示的金刚石铜/铜三层复合板。
经测试，该金刚石铜/铜复合板的综合热导率为482W/mK，综合热膨胀系数为7.9×10-6/K，综合抗弯强度为272MPa。
实施例2
与实施例1不同的是，在第一步预加工中，整平后，将金刚石铜薄板（1）和铜薄板（2）用激光切割的方法进行镂空加工，得到带有不同镂空结构的金刚石铜薄板（1）和铜薄板（2），然后再进行表面研磨加工并清洗干净，其余步骤相同，最终得到带有通道的金刚石铜/铜三层复合板，结构如图3所示。
实施例3
采用图1所示的工艺流程制备三层金刚石铜/铜复合板。具体过程为：第一步，预加工：将尺寸均为6.1×10.1×0.3的金刚石铜薄板（1）（金刚石粒径70μm、金刚石体积分数75%、基体为无氧铜，金刚石铜材料表面用磁控溅射的方法镀覆150nm厚的钛层）和铜薄板（2）（含0.33%铁、0.21%碲、0.003%锂、0.003%稀土金属的铜合金）分别进行整平、表面研磨加工并清洗干净；第二步，装配：将预加工好的金刚石铜薄板（1）和铜薄板（2）按照金刚石铜薄板（1）、铜薄板（2）、金刚石铜薄板（1）、铜薄板（2）、金刚石铜薄板（1）的顺序依次交替整齐地叠放在一起，且叠放后最外侧为金刚石铜薄板（1），得到总叠放层数为5层装配体；第三步，连接：采用压力焊的方法将上述装配体连接成为一个整体，具体工艺为压力18kN，温度780℃，保温保压时间30min，得到金刚石铜/铜复合板半成品；第四步，后加工：将上述金刚石铜/铜复合板半成品进行整平、研磨、清洗后，即得图4所示的金刚石铜/铜五层复合板。
经测试，该金刚石铜/铜复合板的综合热导率为557W/mK，综合热膨胀系数为10.8×10-6/K，综合抗弯强度为215MPa。
实施例4
与实施例3不同的是，在第一步预加工中，整平后，将金刚石铜薄板（1）和铜薄板（2）用激光切割的方法进行镂空加工，得到带有不同镂空结构的金刚石铜薄板（1）和铜薄板（2），然后再进行表面研磨加工并清洗干净，其余步骤相同，最终得到带有通道的金刚石铜/铜五层复合板，结构如图5所示。
Claims (5)
1.一种金刚石铜/铜复合板及其制备方法和应用，其特征在于该金刚石铜/铜复合板由总层数为奇数且不少于3层的金刚石铜薄板、铜薄板互相交替组成，且两侧的最外层为金刚石铜薄板，其制备方法以下步骤：第一步，预加工：包括金刚石铜薄板的预加工和/或铜薄板的预加工，所述预加工包括整平、表面研磨、镂空加工、清洗、镀膜中的一个或多个工序；第二步，装配：将预加工好的金刚石铜薄板和铜薄板按照金刚石铜薄板、铜薄板互相交替的顺序依次整齐地叠放在一起，且叠放后最外侧为金刚石铜薄板，得到总叠放层数为不少于3层的奇数层的装配体；第三步，连接：采用电阻焊、缝焊、热扩散、压力焊、真空热压烧结、放电等离子体烧结中的一种或多种将上述装配体连接成为一个整体，得到金刚石铜/铜复合板半成品；第四步，后加工：将上述金刚石铜/铜复合板半成品进行切割、整平、研磨、清洗、镀膜中的一个或多个工序处理后，即得金刚石铜/铜复合板。
2.一种金刚石铜/铜复合板及其制备方法和应用，其特征在于权利要求1所述的金刚石铜薄板为表面镀膜或不镀膜的金刚石颗粒增强铜基复合材料，厚度为0.05~10mm；当表面镀膜时，所述表面镀膜为钛、铬、钨、锆、铌、钒、硅、硼、钼中的一种或多种薄膜，厚度为1~1000nm；金刚石粒径为10~200μm，金刚石体积分数为10%~90%；铜基体为纯铜或铜合金；当所述铜基体为铜合金时，铜合金为含有钛、铬、钨、锆、铌、钒、硅、硼、钼、碲、硒、铁、锂、稀土金属中的一种或多种的铜合金，合金元素质量分数为0.05%~10%；金刚石颗粒与金属基体之间还存在1~5000nm厚的碳化物层，所述碳化物为碳化钛、碳化铬、碳化钨、碳化锆、碳化铌、碳化钒、碳化硅、碳化硼、碳化钼中的一种或多种。
3.一种金刚石铜/铜复合板及其制备方法和应用，其特征在于权利要求1所述的铜薄板为纯铜或铜合金，厚度为0.05~10mm；当铜薄板为铜合金时，该铜合金含有钛、铬、钨、锆、铌、钒、硅、硼、钼、碲、硒、铁、锂、稀土金属中的一种或多种的铜合金，合金元素质量分数为0.05%~10%。
4.一种金刚石铜/铜复合板及其制备方法和应用，其特征在于权利要求1～3任一项所述方法制备得到的金刚石铜/铜复合板。
5.权利要求4所述的的金刚石铜/铜复合板的应用，其特征在于所述的金刚石铜/铜复合板用于功率半导体、激光二极管、大功率LED、运算芯片的微通道或宏通道的热沉（或散热器）。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010994245.6A CN112078198A (zh) | 2020-09-29 | 2020-09-29 | 一种金刚石铜/铜复合板及其制备方法和应用 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010994245.6A CN112078198A (zh) | 2020-09-29 | 2020-09-29 | 一种金刚石铜/铜复合板及其制备方法和应用 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112078198A true CN112078198A (zh) | 2020-12-15 |
Family
ID=73739258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010994245.6A Pending CN112078198A (zh) | 2020-09-29 | 2020-09-29 | 一种金刚石铜/铜复合板及其制备方法和应用 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112078198A (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112974809A (zh) * | 2021-02-05 | 2021-06-18 | 哈尔滨工业大学 | 一种金刚石/铜复合材料表面覆铜的方法 |
| CN113097165A (zh) * | 2021-03-31 | 2021-07-09 | 度亘激光技术（苏州）有限公司 | 一种半导体叠阵的制备方法 |
| CN116423940A (zh) * | 2023-06-09 | 2023-07-14 | 江苏富乐华功率半导体研究院有限公司 | 一种igbt用铝-金刚石封装底板的制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051891A1 (en) * | 2001-11-09 | 2005-03-10 | Katsuhito Yoshida | Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it |
| CN205303452U (zh) * | 2015-12-01 | 2016-06-08 | 中国电子科技集团公司第五十五研究所 | 金刚石铜热沉材料 |
-
2020
- 2020-09-29 CN CN202010994245.6A patent/CN112078198A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051891A1 (en) * | 2001-11-09 | 2005-03-10 | Katsuhito Yoshida | Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it |
| CN205303452U (zh) * | 2015-12-01 | 2016-06-08 | 中国电子科技集团公司第五十五研究所 | 金刚石铜热沉材料 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112974809A (zh) * | 2021-02-05 | 2021-06-18 | 哈尔滨工业大学 | 一种金刚石/铜复合材料表面覆铜的方法 |
| CN113097165A (zh) * | 2021-03-31 | 2021-07-09 | 度亘激光技术（苏州）有限公司 | 一种半导体叠阵的制备方法 |
| CN116423940A (zh) * | 2023-06-09 | 2023-07-14 | 江苏富乐华功率半导体研究院有限公司 | 一种igbt用铝-金刚石封装底板的制备方法 |
| CN116423940B (zh) * | 2023-06-09 | 2023-08-25 | 江苏富乐华功率半导体研究院有限公司 | 一种igbt用铝-金刚石封装底板的制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112078198A (zh) | 一种金刚石铜/铜复合板及其制备方法和应用 | |
| EP2296177B1 (en) | Method for manufacturing a power module substrate | |
| US7168484B2 (en) | Thermal interface apparatus, systems, and methods | |
| JP2015532531A (ja) | バルクグラフェン材料を含む熱管理アセンブリ | |
| US20220216124A1 (en) | Heat conductor, heat-conducting material, and package structure of semiconductor device | |
| CN101315913A (zh) | 一种轻质高导热效率的功率器的封装件 | |
| CN103457151B (zh) | 一种高温硬焊料准连续半导体激光器巴条叠阵封装方法 | |
| CN106995896B (zh) | 一种金刚石颗粒增强金属基复合材料的金属化方法及结构 | |
| US20070243407A1 (en) | Machinable Metallic Composites | |
| CN205303452U (zh) | 金刚石铜热沉材料 | |
| CN111357100A (zh) | 散热板及其制造方法 | |
| CN103057202B (zh) | 层叠结构热沉材料及制备方法 | |
| CN212666860U (zh) | 一种金刚石铜/铜复合板 | |
| CN111682002B (zh) | 散热板 | |
| US6534792B1 (en) | Microelectronic device structure with metallic interlayer between substrate and die | |
| CN114284857A (zh) | 次级热沉与液冷热沉集成方法、集成热沉及应用 | |
| JPH0769750A (ja) | セラミック接合構造体 | |
| JP7440944B2 (ja) | 複合材料および放熱部品 | |
| JP5869781B2 (ja) | 絶縁基板用積層材の製造方法 | |
| CN210224055U (zh) | 一种用于倒装芯片的界面金属结构 | |
| TWI734528B (zh) | 複合基板 | |
| JP7096999B2 (ja) | 放熱材料用複合基板および放熱ユニットの製造方法 | |
| JP2000022055A (ja) | 炭素繊維複合放熱板 | |
| CN218679761U (zh) | 一种导热高的金刚石膜散热片 | |
| CN212542417U (zh) | 一种功率半导体散热器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20201215 |
|
| WD01 | Invention patent application deemed withdrawn after publication |