CN112071925A - Novel crystalline silicon battery structure and preparation process thereof - Google Patents
Novel crystalline silicon battery structure and preparation process thereof Download PDFInfo
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- CN112071925A CN112071925A CN202011015383.1A CN202011015383A CN112071925A CN 112071925 A CN112071925 A CN 112071925A CN 202011015383 A CN202011015383 A CN 202011015383A CN 112071925 A CN112071925 A CN 112071925A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000002310 reflectometry Methods 0.000 claims abstract description 10
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 229910019213 POCl3 Inorganic materials 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the field of solar cell production. The novel crystalline silicon cell structure is characterized in that the upper surface of the crystalline silicon cell is formed by staggering groove suede and laser doped regions. The invention also relates to a preparation process of the novel crystalline silicon cell structure. The invention is not only beneficial to the formation of good ohmic contact, but also has extremely low reflectivity of a non-metallized area, reduces the reflectivity of the surface of the silicon wafer to 3-5%, and increases the photon absorption rate. The process has simple process and strong equipment compatibility, and the battery conversion efficiency is improved by 0.3 to 0.5 percent.
Description
Technical Field
The invention relates to the field of solar cell production.
Background
The improvement of the conversion efficiency of the crystalline silicon battery can improve the electrical gain on one hand, and increase the optical gain on the other hand, currently, the monocrystalline PERC battery uses groove type alkali texturing to form a pyramid light trapping structure on the surface of a silicon wafer, and the reflectivity is 8-13%. Based on current texturing techniques, there is little possibility to further reduce reflectivity or increase photon utilization.
Disclosure of Invention
The invention aims to reduce the reflectivity of the surface of a silicon wafer to 3-5% by preparing the staggered surface of the groove suede and the laser doping area, and can ensure the passivation effect of the surface of the groove.
The technical scheme adopted by the invention is as follows: the novel crystalline silicon cell structure is characterized in that the upper surface of the crystalline silicon cell is formed by staggering groove suede and laser doped regions.
The interval between the grooves on the pile surface of the grooves is 1.42-1.48mm, the width of the grooves is 0.03mm, the pile surface between the grooves is longitudinally divided into six blocks, the width of the middle four blocks is 30.5mm, the width of each block on the left side and the right side is 14.75-16.75mm, and the interval between the adjacent blocks is 0.7 mm.
Each suede between the grooves is provided with metal wire laser doping areas which are 5 mu m in transverse width and are equally spaced, 46-58.
A novel crystalline silicon cell structure surface preparation process comprises the following steps
Step one, preparing a mask layer;
step two, carving the groove pattern;
step three, making wool;
step four, diffusion and junction making;
step five, laser doping;
sixthly, carrying out PSG and back etching;
seventhly, high-temperature oxidation;
step eight, a front antireflection film;
step nine, back passivation and antireflection coating;
step ten, back laser grooving;
and step eleven, screen printing.
In the first step, a thermal diffusion process is adopted, firstly, N2 is introduced at the flow rate of 10slm, the temperature is raised to 780 ℃, and the time is waited for 5 min; then respectively introducing N2 with the concentration of 300 plus 500sccm, N2-POCl3 with the concentration of 900 plus 1500sccm and O2 with the concentration of 800 plus 1200sccm, wherein the temperature is 780 ℃, the deposition time is 3-5min, the film thickness of PSG is 50-100nm, and the doping concentration is 3 x 1021-5*1021/cm-3(ii) a The proportions of N2 and POCl3 were the same as in the prior art.
In the second step, a green laser source with 532nm wavelength is adopted, the size of a laser spot is 25-30um, the power is 40W, the modulation frequency is 200-240Khz, the engraving speed is 27000mm/min, the interval between grooves on the groove engraving pattern is 1.42-1.48mm, the width of the groove is 0.03mm, the surface between the grooves is longitudinally divided into six blocks, the width of the middle four blocks is 30.5mm, the width of each block on the left side and the right side is 14.75-16.75mm, the interval between adjacent blocks is 0.7mm, and each surface between the grooves is provided with 46-58 equally-spaced laser grooves with the transverse width of 5 mu m.
In the third step, a groove type alkali texturing machine is used for forming groove textured surfaces, the thinning amount of each piece is 0.1-0.2g, pyramid textured surfaces with the thickness of 1-3 mu m are prepared, the reflectivity is 3-5%, and a pickling tank is used for removing PSG on the front surface.
The invention has the beneficial effects that: the invention provides a novel crystalline silicon battery structure and a preparation process of a groove suede, which can reduce the surface reflectivity of a silicon wafer to 3-5% and have low ohmic contact resistance. The process has simple process and strong equipment compatibility, and the battery conversion efficiency is improved by 0.3 to 0.5 percent.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of a textured surface of a groove;
FIG. 3 is a schematic structural view of a single pile;
the laser doping method comprises the following steps of 1, groove texture surface, 2, laser doping area, 3, middle block, 4, block interval, 5, right block and 6, and metal wire laser doping.
Detailed Description
As shown in figure 1, the invention provides a preparation process of a novel crystalline silicon cell groove suede, and a front surface geometric structure is formed by staggering a groove suede 1 and a laser doping area 2. The specific preparation process of the battery structure is as follows:
1. and preparing a mask layer. Introducing N2 at a flow rate of 10slm by adopting a thermal diffusion process, heating to 780 ℃, and waiting for 5 min; then respectively introducing N2 with the concentration of 300 plus 500sccm, N2-POCl3 with the concentration of 900 plus 1500sccm and O2 with the concentration of 800 plus 1200sccm, wherein the temperature is 780 ℃, the deposition time is 3-5min, the film thickness of PSG is 50-100nm, and the doping concentration is 3 x 1021-5*1021/cm-3；
2. Engraving the groove pattern. A green laser source with the wavelength of 532nm is adopted, the size of a laser spot is 25-30um, the power is 40W, the modulation frequency is 200-240Khz, and the engraving speed is 27000 mm/min. As shown in fig. 1, the groove carving pattern is composed of patterns 1 arranged laterally at intervals 2, wherein the width of the pattern 1 is 1.42-1.48mm, and the width of the interval 2 is 0.03 mm; as shown in fig. 2, the engraved pattern is divided into six divided pieces integrally in the longitudinal direction, wherein the middle four divided pieces have a width of 30.5mm per piece 3, two divided pieces at both sides have a width of 14.75-16.75mm 5, and the interval 4 between the divided pieces is 0.7 mm; as shown in FIG. 3, the pattern 1 is formed by arranging straight line segments 6 in the lateral direction at intervals of 5 μm in a number of 46 to 58.
3. And (3) a texturing process. Forming a groove suede by using a groove type alkali suede making machine, reducing the thickness by 0.1-0.2g, preparing a pyramid suede with the thickness of 1-3 mu m, wherein the reflectivity is 3-5%, and removing the PSG on the front surface by using a pickling tank.
4. And (4) diffusion and junction making.
5. And (4) laser doping.
6. Back PSG and back etch. Removing back PSG by chain PSG removing equipment, preparing mixed solution with HF with stock solution concentration of 49% and H2O with volume concentration of 1%, reacting for 0.5-2min, and performing back etching by alkali polishing machine with reduction of 0.1-0.2g and back reflectivity of 30-45%.
7. And (4) high-temperature oxidation.
8. And a front antireflection film.
9. Back passivation and antireflective film.
10. And laser grooving on the back.
11. And (4) screen printing.
All matters in the invention not described herein are to be interpreted in an illustrative and non-limiting sense, including by reference to the accompanying drawings and claims.
Claims (7)
1. A novel crystalline silicon battery structure is characterized in that: the upper surface of the crystalline silicon battery is composed of a groove suede and a laser doping area in a staggered mode.
2. The novel crystalline silicon cell structure of claim 1, wherein: the interval between the grooves on the pile surface of the grooves is 1.42-1.48mm, the width of the grooves is 0.03mm, the pile surface between the grooves is longitudinally divided into six blocks, the width of the middle four blocks is 30.5mm, the width of each block on the left side and the right side is 14.75-16.75mm, and the interval between the adjacent blocks is 0.7 mm.
3. The novel crystalline silicon cell structure of claim 2, wherein: each suede between the grooves is provided with metal wire laser doping areas which are 5 mu m in transverse width and are equally spaced, 46-58.
4. The novel crystalline silicon cell structure surface preparation process of claim 1, characterized in that: the following steps are carried out
Step one, preparing a mask layer;
step two, carving the groove pattern;
step three, making wool;
step four, diffusion and junction making;
step five, laser doping;
sixthly, carrying out PSG and back etching;
seventhly, high-temperature oxidation;
step eight, a front antireflection film;
step nine, back passivation and antireflection coating;
step ten, back laser grooving;
and step eleven, screen printing.
5. The novel crystalline silicon cell structural surface preparation process as claimed in claim 4, characterized in that: in the first step, a thermal diffusion process is adopted,firstly, introducing N2 at the flow rate of 10slm, heating to 780 ℃, and waiting for 5 min; then respectively introducing N2 with the concentration of 300 plus 500sccm, N2-POCl3 with the concentration of 900 plus 1500sccm and O2 with the concentration of 800 plus 1200sccm, wherein the temperature is 780 ℃, the deposition time is 3-5min, the film thickness of PSG is 50-100nm, and the doping concentration is 3 x 1021-5*1021/cm-3(ii) a The proportions of N2 and POCl3 were the same as in the prior art.
6. The novel crystalline silicon cell structural surface preparation process as claimed in claim 4, characterized in that: in the second step, a green laser source with 532nm wavelength is adopted, the size of a laser spot is 25-30um, the power is 40W, the modulation frequency is 200-240Khz, the engraving speed is 27000mm/min, the interval between grooves on the groove engraving pattern is 1.42-1.48mm, the width of the groove is 0.03mm, the surface between the grooves is longitudinally divided into six blocks, the width of the middle four blocks is 30.5mm, the width of each block on the left side and the right side is 14.75-16.75mm, the interval between adjacent blocks is 0.7mm, and each surface between the grooves is provided with 46-58 equally-spaced laser grooves with the transverse width of 5 mu m.
7. The novel crystalline silicon cell structural surface preparation process as claimed in claim 4, characterized in that: in the third step, a groove type alkali texturing machine is used for forming groove textured surfaces, the thinning amount of each piece is 0.1-0.2g, pyramid textured surfaces with the thickness of 1-3 mu m are prepared, the reflectivity is 3-5%, and a pickling tank is used for removing PSG on the front surface.
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| CN202011015383.1A CN112071925A (en) | 2020-09-24 | 2020-09-24 | Novel crystalline silicon battery structure and preparation process thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157283A1 (en) * | 2006-10-09 | 2008-07-03 | Mehrdad Moslehi | Template for three-dimensional thin-film solar cell manufacturing and methods of use |
| CN101404307A (en) * | 2008-10-29 | 2009-04-08 | 中山大学 | Production method for polycrystalline silicon solar cell texture surface |
| US20120298848A1 (en) * | 2009-04-21 | 2012-11-29 | Sergiy Victorovich Vasylyev | Light trapping optical cover |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
| CN209804674U (en) * | 2019-06-10 | 2019-12-17 | 通威太阳能（安徽）有限公司 | monocrystalline silicon battery piece with increased specific surface area |
| CN110629290A (en) * | 2019-08-22 | 2019-12-31 | 山西潞安太阳能科技有限责任公司 | Preparation of wet laser monocrystalline silicon embedded inverted pyramid suede |
| CN111477725A (en) * | 2020-06-04 | 2020-07-31 | 王小娟 | Optical corrosion device for solar cell |
-
2020
- 2020-09-24 CN CN202011015383.1A patent/CN112071925A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157283A1 (en) * | 2006-10-09 | 2008-07-03 | Mehrdad Moslehi | Template for three-dimensional thin-film solar cell manufacturing and methods of use |
| CN101404307A (en) * | 2008-10-29 | 2009-04-08 | 中山大学 | Production method for polycrystalline silicon solar cell texture surface |
| US20120298848A1 (en) * | 2009-04-21 | 2012-11-29 | Sergiy Victorovich Vasylyev | Light trapping optical cover |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
| CN209804674U (en) * | 2019-06-10 | 2019-12-17 | 通威太阳能（安徽）有限公司 | monocrystalline silicon battery piece with increased specific surface area |
| CN110629290A (en) * | 2019-08-22 | 2019-12-31 | 山西潞安太阳能科技有限责任公司 | Preparation of wet laser monocrystalline silicon embedded inverted pyramid suede |
| CN111477725A (en) * | 2020-06-04 | 2020-07-31 | 王小娟 | Optical corrosion device for solar cell |
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Application publication date: 20201211 |