CN112071807B - Method for enabling electric field distribution in high-voltage high-power IGBT packaging structure to be uniform - Google Patents

Method for enabling electric field distribution in high-voltage high-power IGBT packaging structure to be uniform Download PDF

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CN112071807B
CN112071807B CN202010802463.5A CN202010802463A CN112071807B CN 112071807 B CN112071807 B CN 112071807B CN 202010802463 A CN202010802463 A CN 202010802463A CN 112071807 B CN112071807 B CN 112071807B
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material sample
field control
control material
ceramic substrate
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CN112071807A (en
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张博雅
李凯旋
李兴文
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Xian Jiaotong University
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Abstract

The invention discloses a method for enabling electric field distribution in a high-voltage high-power IGBT packaging structure to be uniform, wherein an insulating coating is coated on the edge of a direct copper-coated ceramic substrate in the IGBT packaging structure, and the insulating coating is a field control material sample; filling the field control material sample onto a common boundary line of three area interfaces in the IGBT packaging structure; the three area interfaces comprise an upper metal area side surface of the direct copper-clad ceramic substrate, an upper surface of the ceramic area, a surface of the packaging silica gel material area, a lower metal area side surface of the direct copper-clad ceramic substrate, a lower surface of the ceramic area, and a surface of the packaging silica gel material area; the field control material sample covers the side surface of the upper metal area and the upper surface of the ceramic area of the direct copper-clad ceramic substrate and the side surface of the lower metal area and the lower surface of the ceramic area of the direct copper-clad ceramic substrate; the highest electric field intensity in the IGBT packaging structure is reduced to be lower than the breakdown electric field intensity through the characteristics of the field control material sample, so that effective insulation under high-field high-temperature working conditions is realized.

Description

Method for enabling electric field distribution in high-voltage high-power IGBT packaging structure to be uniform
[ field of technology ]
The invention belongs to the technical field of IGBT packaging structure improvement, and particularly relates to a method for enabling electric field distribution in a high-voltage high-power IGBT packaging structure to be uniform.
[ background Art ]
In recent years, with the increase of electrification degree in various industries, power electronic devices are increasingly applied to industrial, commercial, military, and even medical fields. The rapidly increasing demand and increasingly complex operating environments have driven the development of new generation power electronics toward higher voltages and higher operating temperatures. However, silicon-based semiconductor materials for long-term use in power electronics have been increasingly unable to meet the application demands of the market, and wide bandgap semiconductor materials have great advantages over silicon materials in performance. Nevertheless, the chip must be packaged for use, and the conventional device packaging technology is designed for silicon-based devices, so that when the chip is applied to a wide bandgap semiconductor device, the application of silicon carbide-based devices is limited to a great extent by the great challenges in terms of insulating properties. The reason is that on the one hand a higher blocking voltage brings about a higher electric field.
The increase of the IGBT blocking voltage greatly increases the local electric field in the packaging structure, thereby causing local discharge. On the other hand, higher temperatures lead to a decrease in the insulating properties of the material. The dielectric properties of the encapsulated silicone gel material may change at high temperatures, making the package structure more risky for insulation failure at higher temperatures.
The electric field intensity on the common boundary three bonding lines formed by the metal region, the ceramic region and the packaging silicon gel material region of the direct copper-coated ceramic substrate is the largest, and partial discharge which is possibly generated starts from the electric field intensity, and extends outwards along the ceramic edge, so that the packaging material is degraded and aged, and insulation failure is caused.
Therefore, it is needed to improve the existing packaging structure to improve the insulation performance from solving the problem of high electric field intensity of the three bonding wires. Currently, related researches are being developed internationally, and the existing improvements can be summarized as the adjustment of the packaging structure and the modification of the insulating material. The former includes designing protruding structure, stacking structure and mesa structure, and adjusting thickness, edge curvature and offset of the heat dissipation ceramic substrate and conductive metal layer. Although the scheme improves the electric field distribution inside the structure, on one hand, the structural change is difficult to ensure effective heat dissipation, and on the other hand, the trend of miniaturization development of the IGBT module is also violated.
For modification of insulating materials, the field control properties of dielectric properties are the focus of research. Whether the encapsulation material and the ceramic are modified, replaced or a composite material coating is added, researchers attempt to achieve homogenization of the electric field distribution in the encapsulation structure by means of the field control characteristics of the composite material. Although the scheme relieves the potential insulation hazards under high-resistance voltage, the problem of insulation failure under high temperature is not considered.
Therefore, the method for improving the packaging structure must consider the working environment of coexistence of high field and high temperature on the premise of not affecting the heat dissipation and the size of the module, so as to really realize effective insulation of the packaging structure.
[ invention ]
The invention aims to solve the problem that the existing IGBT module packaging structure is ensured to be effectively insulated under the high-field high-temperature working condition, and provides a method for enabling electric fields in the high-voltage high-power IGBT module packaging structure to be distributed uniformly.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
a method for making electric field distribution uniform in high-voltage high-power IGBT packaging structure is to smear a layer of insulating coating on the edge of a direct copper-coated ceramic substrate in the IGBT packaging structure, wherein the insulating coating is a field control material sample.
And filling the field control material sample to a common boundary line of interfaces of three areas in the IGBT packaging structure.
The three area interfaces comprise an upper metal area side surface of the direct copper-clad ceramic substrate, an upper surface of the ceramic area and a surface of the packaging silica gel material area, and a lower metal area side surface of the direct copper-clad ceramic substrate, a lower surface of the ceramic area and a surface of the packaging silica gel material area.
The field control material sample covers the side surface of the upper metal area and the upper surface of the ceramic area of the direct copper-clad ceramic substrate and the side surface of the lower metal area and the lower surface of the ceramic area of the direct copper-clad ceramic substrate.
The invention is further improved in that the field control material sample refers to a material of which the conductivity is controlled by an electric field and a temperature field.
Further: the field control material sample is a composite material formed by filling silicon carbide particles or zinc oxide particles into epoxy resin or polyimide.
Further: the coverage height range of the field control material sample on the side surface of the upper metal area of the direct copper-clad ceramic substrate is 0-50 mu m.
Further: the coverage width of the field control material sample on the upper surface of the ceramic region of the direct copper-coated ceramic substrate is 0-50 mu m.
Further: the coverage height range of the field control material sample on the side surface of the lower metal area of the direct copper-clad ceramic substrate is 0-50 mu m.
Further: the coverage width of the field control material sample on the lower surface of the ceramic region of the direct copper-coated ceramic substrate is 0-50 mu m.
Further: the cross section of the field control material sample after being smeared is triangular.
Compared with the prior art, the invention has the following beneficial effects:
and applying the field control material sample as a coating to the packaging structure of the high-voltage high-power IGBT, wherein the field control material sample is filled on a common boundary line of three area interfaces in the IGBT packaging structure. Under the premise of not changing the size of the high-voltage high-power IGBT packaging structure and not affecting the heat dissipation of the module, the highest electric field intensity in the IGBT packaging structure is reduced to be lower than the breakdown electric field intensity by the characteristics of the field control material sample, so that effective insulation under the high-field high-temperature working condition is realized, and the insulation failure problem of the traditional packaging technology under the high-voltage high-power working condition is solved.
Further: the cross section of the field control material sample after being smeared is triangular, so that on one hand, the sharpness of the geometric structure on the common boundary line of the interface of the three areas is obviously reduced, the distortion degree of the electric field is obviously attenuated, and the risk of insulation failure is greatly reduced; on the other hand, the composite field control characteristic of the conductivity of the field control material sample means that the conductivity is stronger at a high field and a high temperature, the electric field distribution is more uniform, and the probability of partial discharge is lower, so that the insulation performance of the IGBT packaging structure in a high-voltage high-power environment is greatly improved, and the effective insulation of the packaging structure in the high field and high temperature environment is ensured.
[ description of the drawings ]
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of the present invention;
fig. 2 is a schematic diagram of the whole two-dimensional structure of the high-voltage high-power IGBT package structure according to the present invention;
fig. 3 is an enlarged schematic diagram of the vicinity of a common boundary line of three area interfaces before the present invention is applied in a high-voltage high-power IGBT packaging structure;
fig. 4 is an enlarged schematic diagram of the vicinity of a common boundary line of three area interfaces after the present invention is applied in a high-voltage high-power IGBT packaging structure;
FIG. 5 is a graph showing the distribution of electric field lines and electric field strength before the method of the present invention is applied;
FIG. 6 is a graph showing the distribution of electric field lines and electric field strength after the method of the present invention is applied;
FIG. 7 is a graph showing the optimization effect of the highest electric field strength on the common boundary line of three area interfaces under different blocking voltage and power loss conditions after the method of the present invention is applied.
Wherein: 1. encapsulating the silicone gel material; 2. an upper metal region of the direct copper-clad ceramic substrate; 3. a ceramic region of the direct copper-clad ceramic substrate; 4. a lower metal region of the direct copper-clad ceramic substrate; 5. a common boundary line of the three area interfaces; 6. and (3) a field control material sample.
[ detailed description ] of the invention
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the embodiments of the present invention, it should be noted that, if the terms "upper," "lower," "horizontal," "inner," and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the term "horizontal" if present does not mean that the component is required to be absolutely horizontal, but may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The invention is described in further detail below with reference to the attached drawing figures:
example 1
Referring to fig. 1, a method for making electric field distribution uniform in a high-voltage high-power IGBT packaging structure specifically includes the following steps:
s1: several field control material samples 6 with the volume ratio of filler particles to filled insulating material of 1-15% are prepared.
S2: and (3) selecting a field control material sample 6 with the volume ratio of 1% in the S1, and diluting the field control material sample 6 with the volume ratio of 1% -20% by using a diluent.
S3: and smearing the diluted field control material sample 6 on the edge of the direct copper-coated ceramic substrate in the IGBT packaging structure by using a dispensing technology.
And filling the field control material sample 6 onto a common boundary line 5 of the interface of the three areas in the IGBT packaging structure.
The three area interfaces comprise the side surface of the upper metal area 2 of the direct copper-clad ceramic substrate, the upper surface of the ceramic area 3 and the area surface of the encapsulation silicon gel material 1, the side surface of the lower metal area 4 of the direct copper-clad ceramic substrate, the lower surface of the ceramic area 2 and the area surface of the encapsulation silicon gel material 1.
The field control material sample 6 in the embodiment covers the side of the upper metal region 2 and the surface of the ceramic region 3.
The height of coverage of the field control material sample 6 on the side of the upper metal region 2 in the example is 50 μm.
The coverage width of the field control material sample 6 in the example on the surface of the ceramic region 2 was 50 μm.
The cross section of the field control material sample 6 after being smeared is triangular.
S4: and placing the IGBT packaging structure coated with the field control material sample 6 under different working conditions for testing.
S5: the working condition setting refers to blocking voltage and power loss of the IGBT chip: any combination of 3kV, 6.5kV, 10kV and 55W, 70W, 85W, 100W and 120W.
After the 15 working conditions are preset, testing the current improved IGBT packaging structure and comparing the highest electric field intensity on the common boundary line 5 of the three area interfaces with the breakdown electric field intensity of the packaging silica gel material 1: if the highest electric field intensity is higher than the breakdown electric field intensity, the process goes to S1, the dilution volume ratio of the field control material sample 6 is changed, and the application is repeated.
And if the highest electric field intensity is lower than the breakdown electric field intensity, the working conditions are adjusted to continue testing until all the working conditions are tested.
S6: the IGBT packaging structure tested by all working conditions is an improved IGBT packaging structure meeting the aim of the invention.
Wherein the field control material sample 6 refers to a material with conductivity controlled by an electric field and a temperature field, and the specific field control characteristic of the material is shown in a low field<10 7 V/m and low temperature<In the environment of 350K, the conductivity of the material is 10 -13 S/m。
At a high field 10 8 The conductivity of the material is 10 under the environment of V/m and high temperature of 400K-450K -7 S/m。
The field control material sample 6 is a composite material formed by filling silicon carbide or zinc oxide particles into epoxy resin or polyimide.
The diluent is a reactive diluent, preferably glycidyl ether or ethylene carbonate or propylene carbonate or benzyl alcohol or styrene, and is not limited to the above reactive diluent.
Referring to fig. 2, the conventional high power IGBT packaging structure includes a packaging silicone gel material 1, an upper metal region 2 of a direct copper-clad ceramic substrate, a ceramic region 3, and a lower metal region 4.
Referring to fig. 3, before the high-voltage high-power IGBT packaging structure is applied, the packaging structure includes a packaging silicone gel material 1, an upper metal region 2 of a direct copper-clad ceramic substrate, a ceramic region 3, a lower metal region 4, and a common boundary line 5 of three region interfaces, and specific positions of the common boundary line 5 of the three region interfaces are specified.
The common boundary line 5 of the three area interfaces comprises any one common boundary line, any two opposite common boundary lines, any two adjacent common boundary lines and a common boundary line surrounding a circle, which are formed by the three area interfaces together. The common boundary line 5 in the embodiment shows the common boundary line of the side of the upper metal region 2, the upper surface of the ceramic region 3 and the surface of the region of the encapsulation silicone gel material 1 of the direct copper-clad ceramic substrate, and the common boundary line of the side of the lower metal region 4, the lower surface of the ceramic region 2 and the surface of the region of the encapsulation silicone gel material 1 of the direct copper-clad ceramic substrate is not shown.
The three area interfaces comprise the side surface of the upper metal area 2 of the direct copper-clad ceramic substrate, the upper surface of the ceramic area 3 and the area surface of the packaging material 1, the side surface of the lower metal area 4 of the direct copper-clad ceramic substrate, the lower surface of the ceramic area 3 and the area surface of the packaging material 1.
Referring to fig. 4, after the present invention is applied to a high-voltage high-power IGBT packaging structure, the high-power IGBT packaging structure includes a packaging material 1, an upper metal region 2 of a direct copper-clad ceramic substrate, a ceramic region 3, a lower metal region 4, and a coating region 6.
The improved mechanism of the method in the traditional high-voltage high-power IGBT packaging structure is described.
The improvement of the IGBT packaging structure by the method for improving the insulating performance of the high-voltage high-power IGBT packaging structure by using the field control material sample 6 as a coating is reflected in the improvement of the geometric structure on the common boundary line 5 of the three area interfaces and the field control characteristic of the conductivity of the material of the coating coverage area.
The cross section of the field control material sample 6 after being smeared is triangular, so that the sharpness of the geometric structure on the common boundary line 5 of the interface of the three areas is obviously reduced, the distortion degree of the electric field is obviously attenuated, and the risk of insulation failure is greatly reduced.
The field control characteristic of the conductivity of the field control material sample 6 means that the conductivity is stronger at high field and high temperature, the electric field distribution is more uniform, and the probability of partial discharge is lower, so that the insulation performance of the IGBT packaging structure in a high-voltage high-power environment is greatly improved, and the effective insulation of the packaging structure in a high-field high-temperature environment is ensured.
Referring to fig. 5, before the present invention is applied, the highest electric field strength at the common boundary line 5 at the interface of the three regions exceeds 20kV/mm, and the high field strength therein is radiated outward, forming a high electric field region.
Referring to fig. 6, after the present invention is applied, the highest electric field intensity on the common boundary line 5 at the interface of the three regions is reduced to below 10kV/mm, and the electric field intensity of the entire high electric field region is at a low value level.
In comparison with fig. 5 and 6, both the highest electric field intensity on the common boundary line 5 of the three area interfaces in the igbt package structure and the distortion degree of the high field area are significantly attenuated and improved, and the high electric field intensity of the ceramic area 4 is no longer present.
This shows that the method of the invention can obviously optimize the electric field distribution near the common boundary line 5 of the high electric field region, especially the three region interfaces, in the IGBT packaging structure.
The high electric field intensity on the common boundary line 5 of the three area interfaces in the IGBT packaging structure is essentially caused by the extremely sharp edges, the geometrical structure is optimized after the structure is improved, namely the coating is applied, and the electric field is regulated and controlled by the conductivity of the field control material sample 6 under the high-field high-temperature environment, so that the optimization of electric field distribution is finally realized.
Comparing the electric field distribution before and after the application of the invention through fig. 5 and 6, it can be known that the method has a remarkable optimizing effect on the electric field distribution in the IGBT packaging structure.
And the specific degree of optimization is related to the power loss and blocking voltage, as shown in fig. 7: all the optimization degrees are positive values, which means that the electric field under all working conditions is optimized after the method is applied, and only the manifestations of the degrees are different.
The degree of electric field optimization at the same power consumption is determined by the blocking voltage: the average electric field optimization degree of each power consumption under the 3kV blocking voltage is about 42.6%, and the optimization degree of 6.5kV is higher than that of 3kV by more than 10 percentage points under the same conditions, and the average optimization degree is 55.4%.
This illustrates that the degree of electric field optimisation is positively correlated with the blocking voltage. When the blocking voltage reaches 10kV, the average drop amplitude of the highest electric field before and after the application of the coating reaches 61.8%, and the electric field optimization effect under the high blocking voltage is more obvious.
The degree of electric field optimization at different power consumption is also significantly different: when the blocking voltage was fixed at 10kV, the electric field optimizations at different power consumption were 47% (55W), 55% (70W), 64% (85W), 70% (100W) and 73% (120W), respectively, and the trend of the changes of 3kV and 6.5kV were the same as 10 kV.
This means that the degree of electric field optimisation increases with increasing power consumption. Further analysis showed that the average electric field optimisation at 55W was 35.67% and that this value increased by 30% to 66.7% at 120W. From this, it can be seen that the power consumption has a significant effect on optimizing the electric field.
Referring to fig. 7, the results show that the application effect of the method is better under the working conditions of larger electric field and higher temperature, which means that the risk of insulation failure of the IGBT with higher voltage and higher power is lower.
The invention creatively proposes to apply the field control material sample 6 as a coating to the packaging structure of the high-voltage high-power IGBT, and reduces the highest electric field intensity in the packaging structure of the IGBT below the breakdown electric field intensity on the premise of not changing the size of the packaging structure of the high-voltage high-power IGBT or affecting the heat dissipation of the module, thereby realizing effective insulation under the high-field high-temperature working condition and solving the insulation failure problem of the traditional packaging technology under the high-voltage high-power working condition.
The invention obviously reduces the highest electric field intensity on the three-combination line of the IGBT packaging structure under the high-voltage high-power working condition, obviously improves the electric field distortion degree of the high-electric field area, greatly optimizes the electric field distribution, reduces the risk of insulation failure, improves the insulation performance of the IGBT packaging structure under the high-field high-temperature environment, removes the limitation of the packaging technology on the application of the high-voltage high-power IGBT module, and promotes the commercialization process of the high-voltage high-power IGBT module.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (2)

1. A method for enabling electric field distribution in a high-voltage high-power IGBT packaging structure to be uniform is characterized in that a layer of insulating coating is smeared on the edge of a direct copper-clad ceramic substrate in the IGBT packaging structure, the insulating coating is a field control material sample (6), and the field control material sample (6) is filled with filler particles and filled insulating materials in a volume ratio of 1% -15%;
filling the field control material sample (6) onto a common boundary line (5) of three area interfaces in the IGBT packaging structure;
the three area interfaces comprise the side surface of an upper metal area (2) of the direct copper-clad ceramic substrate, the upper surface of a ceramic area (3) and the area surface of a packaging silica gel material (1), the side surface of a lower metal area (4) of the direct copper-clad ceramic substrate, the lower surface of the ceramic area (3) and the area surface of the packaging silica gel material (1);
the field control material sample (6) covers the side surface of the upper metal area (2) and the upper surface of the ceramic area (3) of the direct copper-coated ceramic substrate and the side surface of the lower metal area (4) and the lower surface of the ceramic area (3) of the direct copper-coated ceramic substrate;
the coverage height range of the field control material sample (6) on the side surface of the upper metal area (2) of the direct copper-coated ceramic substrate is 0-50 mu m;
the coverage height range of the field control material sample (6) on the side surface of the lower metal area (4) of the direct copper-coated ceramic substrate is 0-50 mu m;
the coverage width of the field control material sample (6) on the upper surface of the ceramic area (3) of the direct copper-coated ceramic substrate is 0-50 mu m;
the coverage width of the field control material sample (6) on the lower surface of the ceramic region (3) of the direct copper-coated ceramic substrate is 0-50 mu m;
the cross section of the field control material sample (6) after being smeared is triangular;
the field control material sample (6) is a composite material formed by filling silicon carbide particles or zinc oxide particles into epoxy resin or polyimide; the conductivity of the composite material is controlled by an electric field and a temperature field;
the field control material sample (6) is diluted by a diluting agent, wherein the volume ratio of the diluting agent to the field control material sample (6) is 1% -20%; the diluent is a reactive diluent.
2. The method for making the electric field distribution uniform in the high-voltage high-power IGBT packaging structure according to claim 1, wherein the diluent is glycidyl ether or ethylene carbonate or propylene carbonate or benzyl alcohol or styrene.
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