CN112071807A - Method for enabling electric field in high-voltage high-power IGBT packaging structure to be distributed uniformly - Google Patents

Method for enabling electric field in high-voltage high-power IGBT packaging structure to be distributed uniformly Download PDF

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CN112071807A
CN112071807A CN202010802463.5A CN202010802463A CN112071807A CN 112071807 A CN112071807 A CN 112071807A CN 202010802463 A CN202010802463 A CN 202010802463A CN 112071807 A CN112071807 A CN 112071807A
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electric field
packaging structure
material sample
control material
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CN112071807B (en
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张博雅
李凯旋
李兴文
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Xian Jiaotong University
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Abstract

The invention discloses a method for enabling electric field distribution in a high-voltage high-power IGBT (insulated gate bipolar translator) packaging structure to be uniform, wherein an insulating coating is coated on the edge of a direct copper-clad ceramic substrate in the IGBT packaging structure, and the insulating coating is a field control material sample; filling the field control material sample to a common boundary line of three area interfaces in the IGBT packaging structure; the three area interfaces comprise the side surface of an upper metal area of the direct copper-clad ceramic substrate, the upper surface of the ceramic area, the surface of a packaging silica gel material area, the side surface of a lower metal area of the direct copper-clad ceramic substrate, the lower surface of the ceramic area and the surface of the packaging silica gel material area; the field control material sample covers the side surface of the upper metal area and the upper surface of the ceramic area of the direct copper-clad ceramic substrate and the side surface of the lower metal area and the lower surface of the ceramic area of the direct copper-clad ceramic substrate; the highest electric field intensity in the IGBT packaging structure is reduced to be lower than the breakdown electric field intensity through the characteristics of the field control material sample, and effective insulation under the high-field high-temperature working condition is realized.

Description

Method for enabling electric field in high-voltage high-power IGBT packaging structure to be distributed uniformly
[ technical field ] A method for producing a semiconductor device
The invention belongs to the technical field of IGBT packaging structure improvement, and particularly relates to a method for enabling electric fields in a high-voltage high-power IGBT packaging structure to be uniformly distributed.
[ background of the invention ]
In recent years, power electronic devices have been increasingly used in industrial, commercial, military, and medical fields as the degree of electrification in various industries has increased. The rapidly increasing demand and increasingly complex operating environments are driving the new generation of power electronic devices toward higher voltages and higher operating temperatures. However, silicon-based semiconductor materials used in power electronic devices for a long time have been unable to meet the application requirements of the market, and the wide bandgap semiconductor materials have great advantages in performance over silicon materials. Nevertheless, the chip must be packaged before it can be used, and the conventional device packaging technology is designed for silicon-based devices, and the application of silicon carbide-based devices is largely limited by the huge challenge in terms of insulation performance when the silicon carbide-based devices are applied to wide bandgap semiconductor devices. The reason is that on the one hand a higher blocking voltage leads to a higher electric field.
The IGBT blocks the increase in voltage, greatly increasing the local electric field in the package structure, thereby causing partial discharge. On the other hand higher temperatures lead to a reduction in the insulating properties of the material. The dielectric properties of the packaging silicone gel material can change at high temperatures, so that the risk of insulation failure of the packaging structure is higher at higher temperatures.
The electric field intensity on the common boundary triple-junction line formed by the metal area, the ceramic area and the packaging silica gel material area of the direct copper-clad ceramic substrate is the largest, and the possible partial discharge starts from the position and extends outwards along the edge of the ceramic, so that the packaging material is degraded and aged, and the insulation failure is caused.
Therefore, it is desirable to improve the conventional package structure to improve the insulation performance in order to solve the problem of high electric field strength of the triple bond wires. Currently, related research is gradually developed internationally, and the existing improvement schemes can be summarized as the adjustment of the packaging structure and the modification of the insulating material. The former includes not only designing the protruding structure, the stacking structure and the mesa structure, but also adjusting the thickness, the edge curvature and the offset of the heat dissipation ceramic substrate and the conductive metal layer. Although the scheme improves the electric field distribution inside the structure, on one hand, the change of the structure is difficult to ensure effective heat dissipation, and on the other hand, the scheme also goes against the trend of the miniaturization development of the IGBT module.
For the modification of insulating materials, field control properties of dielectric properties are the focus of research. Whether the packaging material and the ceramic are modified, replaced or a composite material coating is added, researchers try to achieve the homogenization of the electric field distribution in the packaging structure by means of the field control characteristic of the composite material. Although the scheme relieves the insulation hidden trouble under the high-breaking voltage, the problem of insulation failure under high temperature is not considered.
Therefore, the method for improving the packaging structure must consider the working environment with coexistence of high field and high temperature on the premise of not influencing the heat dissipation and the size of the module, so as to really realize the effective insulation of the packaging structure.
[ summary of the invention ]
The invention aims to solve the problem that the packaging structure is effectively insulated under the high-field high-temperature working condition in the existing IGBT module packaging structure, and provides a method for enabling the electric field in the high-voltage high-power IGBT packaging structure to be uniformly distributed.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a method for enabling electric field distribution in a high-voltage high-power IGBT packaging structure to be uniform is characterized in that an insulating coating is coated on the edge of a direct copper-clad ceramic substrate in the IGBT packaging structure, and the insulating coating is a field control material sample.
And filling the field control material sample on a common boundary line of three area interfaces in the IGBT packaging structure.
The three area interfaces comprise the side surface of an upper metal area of the direct copper-clad ceramic substrate, the upper surface of the ceramic area, the surface of a packaging silica gel material area, the side surface of a lower metal area of the direct copper-clad ceramic substrate, the lower surface of the ceramic area and the surface of the packaging silica gel material area.
The field control material sample covers the side surface of the upper metal area and the upper surface of the ceramic area of the direct copper-clad ceramic substrate and the side surface of the lower metal area and the lower surface of the ceramic area of the direct copper-clad ceramic substrate.
In a further improvement of the present invention, the field control material sample refers to a material whose conductivity is controlled by an electric field and a temperature field.
Further: the field control material sample is a composite material formed by filling silicon carbide particles or zinc oxide particles into epoxy resin or polyimide.
Further: the coverage height range of the field control material sample on the side surface of the upper metal area of the direct copper-clad ceramic substrate is 0-50 mu m.
Further: the coverage width range of the field control material sample on the upper surface of the ceramic area of the direct copper-clad ceramic substrate is 0-50 mu m.
Further: the coverage height range of the field control material sample on the side surface of the lower metal area of the direct copper-clad ceramic substrate is 0-50 mu m.
Further: the coverage width range of the field control material sample on the lower surface of the ceramic area of the direct copper-clad ceramic substrate is 0-50 mu m.
Further: the cross section of the coated field control material sample is triangular.
Compared with the prior art, the invention has the following beneficial effects:
the field control material sample is used as a coating to be applied to a packaging structure of the high-voltage high-power IGBT, and the field control material sample is filled on a common boundary line of three area interfaces in the IGBT packaging structure. On the premise of not changing the volume of the high-voltage high-power IGBT packaging structure and not influencing module heat dissipation, the highest electric field intensity in the IGBT packaging structure is reduced to be lower than the breakdown electric field intensity through the characteristics of the field control material sample, effective insulation under the high-field high-temperature working condition is realized, and the problem of insulation failure of the traditional packaging technology under the high-voltage high-power working condition is solved.
Further: the cross section of the coated field control material sample is triangular, so that on one hand, the sharpness degree of a geometric structure on a common boundary line of three area interfaces is obviously reduced, the distortion degree of an electric field is obviously reduced, and the risk of insulation failure is greatly reduced; on the other hand, the composite field control characteristic of the conductivity of the field control material sample means that the conductivity is stronger at high field and high temperature, the electric field distribution is more uniform, and the probability of partial discharge is lower, so that the insulating property of the IGBT packaging structure under the high-voltage and high-power environment is greatly improved, and the effective insulation of the packaging structure under the high field and high-temperature environment is ensured.
[ description of the drawings ]
In order to more clearly explain the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a flow chart of the present invention;
FIG. 2 is an overall schematic diagram of a two-dimensional structure of a high-voltage high-power IGBT packaging structure of the invention;
FIG. 3 is an enlarged schematic view of the vicinity of a common boundary line of three region interfaces before the present invention is applied to a high-voltage high-power IGBT package structure;
FIG. 4 is an enlarged schematic view of the vicinity of a common boundary line of three region interfaces after the invention is applied to a high-voltage high-power IGBT packaging structure;
FIG. 5 is a graph of electric field lines and electric field intensity distribution before application of the method of the present invention;
FIG. 6 is a graph of electric field lines and electric field intensity distribution after the method of the present invention is applied;
FIG. 7 is a diagram showing the optimization effect of the highest electric field intensity on the common boundary line of the three area interfaces under different blocking voltages and power loss conditions after the method of the present invention is applied.
Wherein: 1. encapsulating the silicone gel material; 2. directly coating the upper metal area of the copper ceramic substrate; 3. directly coating a ceramic area of the copper ceramic substrate; 4. directly coating the lower metal area of the copper ceramic substrate; 5. common boundary lines of the three zone interfaces; 6. a field control material sample.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that if the terms "upper", "lower", "horizontal", "inner", etc. are used for indicating the orientation or positional relationship based on the orientation or positional relationship shown in the drawings or the orientation or positional relationship which is usually arranged when the product of the present invention is used, the description is merely for convenience and simplicity, and the indication or suggestion that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, cannot be understood as limiting the present invention. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
Furthermore, the term "horizontal", if present, does not mean that the component is required to be absolutely horizontal, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, it should be further noted that unless otherwise explicitly stated or limited, the terms "disposed," "mounted," "connected," and "connected" should be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The invention is described in further detail below with reference to the accompanying drawings:
example 1
Referring to fig. 1, a method for making electric field distribution in a high-voltage high-power IGBT package structure uniform specifically includes the following steps:
s1: preparing a plurality of field control material samples 6 with the volume ratio of the filler particles to the filled insulating material of 1-15 percent.
S2: the field control material sample 6 with the volume ratio of 1% in S1 is selected, and the diluent is used to dilute 1% of the field control material sample 6, and the dilution volume ratio is 1% to 20%.
S3: and smearing the diluted field control material sample 6 on the edge of the direct copper-clad ceramic substrate in the IGBT packaging structure by using a dispensing technology.
The field control material sample 6 is filled on the common boundary line 5 of the three area interfaces in the IGBT packaging structure.
The three area interfaces comprise the side surface of an upper metal area 2 of the direct copper-clad ceramic substrate, the upper surface of a ceramic area 3 and the surface of an area of the packaging silica gel material 1, the side surface of a lower metal area 4 of the direct copper-clad ceramic substrate, the lower surface of the ceramic area 2 and the surface of the area of the packaging silica gel material 1.
The field control material sample 6 in the embodiment covers the side of the upper metal region 2 and the surface of the ceramic region 3.
The coverage height of the field control material sample 6 in the example on the side of the upper metal region 2 was 50 μm.
The coverage width of the field control material sample 6 in the example on the surface of the ceramic region 2 was 50 μm.
The cross section of the field control material sample 6 after being coated is triangular.
S4: and placing the IGBT packaging structure coated with the field control material sample 6 under different working conditions for testing.
S5: the working condition setting refers to the blocking voltage and power loss of the IGBT chip: 3kV, 6.5kV, 10kV and any combination of 55W, 70W, 85W, 100W and 120W.
After the 15 working conditions are preset, the current improved IGBT packaging structure is tested, and the highest electric field intensity on the common boundary line 5 of the three area interfaces and the breakdown electric field intensity of the packaging silicone gel material 1 are compared: if the highest electric field strength is higher than the breakdown electric field strength, the process goes to S1, the dilution volume ratio of the field control material sample 6 is changed, and the smearing is re-diluted.
And if the highest electric field intensity is lower than the breakdown electric field intensity, adjusting the working conditions and continuing the test until all the working conditions are tested.
S6: the IGBT packaging structure tested under all working conditions is an improved IGBT packaging structure meeting the purpose of the invention.
Wherein, the field control material sample 6 is a material with the conductivity controlled by an electric field and a temperature field, and the specific field control characteristic of the material is shown in a low field<107V/m and low temperature<The material conductivity is 10 under the environment of 350K-13S/m。
At high field 108The material conductivity is 10 under the environment of V/m and high temperature 400K-450K-7S/m。
The field control material sample 6 is a composite material formed by filling silicon carbide or zinc oxide particles into epoxy resin or polyimide.
The diluent is a reactive diluent, preferably glycidyl ether or ethylene carbonate or propylene carbonate or benzyl alcohol or styrene, and is not limited to the above reactive diluents.
Referring to fig. 2, the conventional high power IGBT package structure includes a package silicone gel material 1, an upper metal region 2 of a direct copper clad ceramic substrate, a ceramic region 3, and a lower metal region 4.
Referring to fig. 3, before the high-voltage high-power IGBT package structure is applied, the package structure includes a package silicone gel material 1, an upper metal region 2 directly coated with a copper ceramic substrate, a ceramic region 3, a lower metal region 4, and a common boundary line 5 of three region interfaces, and the specific position of the common boundary line 5 of the three region interfaces is specified.
The common boundary line 5 of the three zone interfaces comprises any one common boundary line, any two opposite common boundary lines, any two adjacent common boundary lines and a common boundary line surrounding a circle, which are formed by the three zone interfaces. The common boundary line 5 in the embodiment is shown as a common boundary line of the side of the upper metal region 2, the upper surface of the ceramic region 3 and the surface of the region of the packaging silicone gel material 1 of the direct copper-clad ceramic substrate, and is not shown as a common boundary line of the side of the lower metal region 4, the lower surface of the ceramic region 2 and the surface of the region of the packaging silicone gel material 1 of the direct copper-clad ceramic substrate.
The three area interfaces comprise the side surface of an upper metal area 2 of the direct copper-clad ceramic substrate, the upper surface of a ceramic area 3 and the area surface of the packaging material 1, the side surface of a lower metal area 4 of the direct copper-clad ceramic substrate, the lower surface of the ceramic area 3 and the area surface of the packaging material 1.
Referring to fig. 4, after the present invention is applied to a high-voltage high-power IGBT package structure, the high-power IGBT package structure includes a package material 1, an upper metal region 2 directly coated with a copper ceramic substrate, a ceramic region 3, a lower metal region 4, and a coating region 6.
The improvement mechanism of the method in the traditional high-voltage high-power IGBT packaging structure is illustrated.
The improvement of the IGBT packaging structure by using the method for improving the insulating property of the high-voltage high-power IGBT packaging structure by using the field control material sample 6 as the coating is embodied in the improvement of the geometric structure on the common boundary line 5 of the three region interfaces and the field control characteristic of the conductivity of the material of the coating covering region.
The cross section of the coated field control material sample 6 is triangular, so that the sharpness degree of a geometric structure on a common boundary line 5 of three region interfaces is obviously reduced, the distortion degree of an electric field is obviously reduced, and the risk of insulation failure is greatly reduced.
The field control property of the conductivity of the field control material sample 6 means that the conductivity is stronger at high field and high temperature, the electric field distribution is more uniform, and the probability of partial discharge is lower, so that the insulating property of the IGBT packaging structure under the high-voltage and high-power environment is greatly improved, and the effective insulation of the packaging structure under the high field and high-temperature environment is ensured.
Referring to fig. 5, before the present invention is applied, the highest electric field intensity on the common boundary line 5 of the three zone interfaces exceeds 20kV/mm, and the high field intensity is radiated outward, forming a high electric field zone.
Referring to fig. 6, after the present invention is applied, the highest electric field intensity on the common boundary line 5 of the three kinds of zone interfaces is reduced to less than 10kV/mm, and the electric field intensity of the whole high electric field zone is at a low level.
Comparing fig. 5 and fig. 6, the highest electric field strength on the common boundary line 5 of the three region interfaces in the IGBT package structure and the distortion degree of the high field region are both significantly attenuated and improved, and the high electric field strength of the ceramic region 4 no longer appears.
This shows that the method of the present invention can obviously optimize the electric field distribution in the high electric field region in the IGBT packaging structure, especially in the vicinity of the common boundary line 5 of the three region interfaces.
This is because the high electric field intensity on the common boundary line 5 of the three area interfaces in the IGBT package structure is essentially caused by the excessively sharp edges, and after the structural improvement, i.e., the application of the coating, the geometric structure at this point is optimized, and in addition, the electric field is regulated and controlled by the conductivity of the field control material sample 6 in the high-field high-temperature environment, and finally, the optimization of the electric field distribution is achieved.
Comparing the electric field distribution before and after the application of the present invention with fig. 5 and 6, it can be known that the method has a significant optimization effect on the electric field distribution in the IGBT package structure.
While the specific degree of optimization is related to power loss and blocking voltage, as shown in fig. 7: all the optimization degrees are positive values, which shows that the electric field under each working condition is optimized after the method is applied, and only the performance is different in degree.
The electric field optimization degree under the same power consumption is determined by the blocking voltage: the optimization degree of each power consumption average electric field under the 3kV power-off resistance is about 42.6%, while the optimization degree of 6.5kV under the same condition is higher than 3kV by more than 10 percentage points, and the average optimization degree is 55.4%.
This indicates that the degree of electric field optimization is positively correlated with the blocking voltage. When the blocking voltage reaches 10kV, the average descending amplitude of the highest electric field before and after the coating is applied reaches 61.8%, and the electric field optimization effect under the high blocking voltage is more obvious.
The electric field optimization degree under different power consumption is also obviously different: when the blocking voltage was fixed to 10kV, the electric field optimization degrees at different power consumptions were 47% (55W), 55% (70W), 64% (85W), 70% (100W) and 73% (120W), respectively, and the variation trends of 3kV and 6.5kV were the same as 10 kV.
This indicates that the degree of electric field optimization increases with increasing power consumption. Further analysis revealed that the mean electric field optimization at 55W was 35.67%, whereas at 120W the value increased by 30 percentage points to 66.7%. Therefore, the optimization effect of the power consumption on the electric field is obvious.
Referring to fig. 7, the results show that the method is better applied under the conditions of larger electric field and higher temperature, which means that the risk of insulation failure of the IGBT with higher voltage and higher power is lower.
The invention innovatively provides that the field control material sample 6 is applied to the packaging structure of the high-voltage high-power IGBT as a coating, the highest electric field intensity in the IGBT packaging structure is reduced to be lower than the breakdown electric field intensity on the premise of not changing the volume of the high-voltage high-power IGBT packaging structure and not influencing the module heat dissipation, the effective insulation under the high-field high-temperature working condition is realized, and the insulation failure problem of the traditional packaging technology under the high-voltage high-power working condition is solved.
The invention obviously reduces the highest electric field intensity on the three-binding line of the IGBT packaging structure under the working condition of high voltage and high power, obviously improves the electric field distortion degree of a high electric field area, greatly optimizes the electric field distribution, reduces the risk of insulation failure, improves the insulation performance of the IGBT packaging structure under the high-field high-temperature environment, removes the limitation of the packaging technology on the application of the high-voltage and high-power IGBT module, and promotes the commercialization process of the high-voltage and high-power IGBT module.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (8)

1. A method for making electric field distribution in high-voltage high-power IGBT packaging structure uniform is characterized in that a layer of insulating coating is smeared on the edge of a direct copper-clad ceramic substrate in the IGBT packaging structure, and the insulating coating is a field control material sample (6);
the field control material sample (6) is filled on a common boundary line (5) of three area interfaces in the IGBT packaging structure;
the three area interfaces comprise the side surface of an upper metal area (2) of a direct copper-clad ceramic substrate, the upper surface of a ceramic area (3), the area surface of a packaging silica gel material (1), the side surface of a lower metal area (4) of the direct copper-clad ceramic substrate, the lower surface of the ceramic area (2) and the area surface of the packaging silica gel material (1);
the field control material sample (6) covers the side surface of the upper metal area (2) and the upper surface of the ceramic area (3) of the direct copper-clad ceramic substrate and the side surface of the lower metal area (4) and the lower surface of the ceramic area (3) of the direct copper-clad ceramic substrate.
2. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 1, characterized in that the field control material sample (6) is a material whose conductivity is controlled by electric field and temperature field.
3. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 2, characterized in that the field control material sample (6) is a composite material formed by filling silicon carbide particles or zinc oxide particles with epoxy resin or polyimide.
4. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 1, characterized in that the coverage height of the field control material sample (6) on the side of the upper metal region (2) of the direct copper-clad ceramic substrate is in the range of 0-50 μm.
5. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 4, characterized in that the coverage width of the field control material sample (6) on the upper surface of the ceramic region (3) of the direct copper-clad ceramic substrate is in the range of 0-50 μm.
6. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 1, characterized in that the coverage height of the field control material sample (6) on the side of the lower metal region (4) of the direct copper-clad ceramic substrate is in the range of 0-50 μm.
7. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 4, characterized in that the coverage width of the field control material sample (6) on the lower surface of the ceramic region (3) of the direct copper-clad ceramic substrate is in the range of 0-50 μm.
8. The method for making the electric field distribution in the high-voltage high-power IGBT packaging structure uniform according to claim 1, characterized in that the cross section of the coated field control material sample (6) is triangular.
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CN113376484A (en) * 2021-06-10 2021-09-10 上海富乐华半导体科技有限公司 Partial discharge test method for double-sided copper-clad ceramic substrate
CN113421858A (en) * 2021-06-01 2021-09-21 湖南大学 Insulated Gate Bipolar Transistor (IGBT) module internal insulation packaging layer control system based on electric field driving

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CN113421858A (en) * 2021-06-01 2021-09-21 湖南大学 Insulated Gate Bipolar Transistor (IGBT) module internal insulation packaging layer control system based on electric field driving
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