CN112062572A - 一种高致密度的碳化硅陶瓷及其制备方法和应用 - Google Patents
一种高致密度的碳化硅陶瓷及其制备方法和应用 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 31
- 238000000498 ball milling Methods 0.000 claims abstract description 17
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 16
- 229920003257 polycarbosilane Polymers 0.000 claims abstract description 15
- 238000005336 cracking Methods 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 238000005452 bending Methods 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 239000002243 precursor Substances 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 239000011812 mixed powder Substances 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000005272 metallurgy Methods 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052575 non-oxide ceramic Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
本发明属于非氧化物陶瓷材料领域,公开了一种高致密碳化硅陶瓷及其制备方法和应用。所述碳化硅陶瓷是以聚碳硅烷作为前驱体,以Al2O3‑Re2O3为烧结助剂,将聚碳硅烷和Al2O3‑Re2O3球磨混合后,保护气氛下,在500~1200℃裂解,所得碳化硅粉体经预压后在1500~1700℃进行烧结制得。本发明制得的SiC陶瓷的致密度为97%以上,维氏硬度为20~30GPa,抗弯强度为700~1200MPa,断裂韧性为6~12MPa·m1/2,在1200℃下高温强度为600~1000MPa。本发明可实现各种结构复杂的大型结构件的制备,大大地降低了制备成本。
Description
技术领域
本发明属于非氧化物陶瓷材料技术领域,更具体地,涉及一种高致密度的碳化硅陶瓷及其制备方法和应用。
背景技术
碳化硅(SiC)陶瓷具有高熔点、高强度、高硬度以及耐腐蚀等优异的性能;尤其是其抗高温烧蚀性能,使其在航空航天飞行器、冶炼窑炉构件等高温应用场景大放异彩。但由于SiC的强共价键,导致其烧结性能差,很难通过自扩散实现烧结致密化,导致烧结的成品致密度较低。
目前,对于SiC陶瓷的制备主要集中在高温、高压条件下制备;然而,以上方法不仅制备成本高,而且不利于大型结构件的成型制备,极大地限制了其应用。为了解决以上问题,通常需要加入各种烧结助剂促进SiC陶瓷的烧结。以上方法虽然可以一定程度上降低SiC陶瓷制备的温度和压力,但是仍然没有从本质上解决SiC陶瓷的低烧结活性。基于以上背景,急需开发一种方法通过改善SiC陶瓷的烧结活性,在温和条件下制备得到致密高性能SiC陶瓷。
发明内容
为了解决上述现有技术存在的不足和缺点,提供一种高致密度的碳化硅陶瓷。
本发明的另一目的在于提供上述高致密度的碳化硅陶瓷的制备方法。该方法是以聚碳硅烷作为前驱体,通过裂解得到高活性的碳化硅,并通过较低温度的烧结制得高致密度的碳化硅陶瓷。
本发明的再一目的在于提供上述高致密度的碳化硅陶瓷的应用。
本发明的目的通过下述技术方案来实现:
一种高致密度的碳化硅陶瓷,所述碳化硅陶瓷是以聚碳硅烷作为前驱体,以Al2O3-Re2O3为烧结助剂,将聚碳硅烷和Al2O3-Re2O3球磨混合后,保护气氛下,在500~1200℃裂解,所得碳化硅粉体经预压后在1500~1700℃进行烧结制得。
优选地,所述的述碳化硅陶瓷的致密度为97%以上,维氏硬度为20~30GPa,抗弯强度为700~1200MPa,断裂韧性为6~12MPa·m1/2,在1200℃下高温强度为600~1000MPa。
优选地,所述Al2O3-Re2O3的纯度为99~99.9wt.%,所述Al2O3-Re2O3的粒径为0.01~2μm。
优选地,所述Re2O3中Re为Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu。
优选地,所述球磨为辊式球磨,是以乙醇为溶剂,以氮化硅球为球磨介质,球磨转速为500~150r/min,所述球磨的时间为8~24h。
优选地,所述聚碳硅烷和烧结助剂的质量比为(17~19):(1~3);所述烧结助剂中的Al2O3与Re2O3的质量比为(1~99):(1~99)。
优选地,所述裂解的升温速率为5~20℃/min,所述烧结的升温速率为5~15℃/min,所述烧结的时间为1~20min。
优选地,所述保护气氛为氮气或氩气。
所述的高致密度的碳化硅陶瓷的制备方法,包括以下具体步骤:
S1.将聚碳硅烷前驱体和烧结助剂Al2O3-Re2O3球磨混合后,保护气氛下,在500~1200℃裂解,得到混合粉体;
S2.将裂解所得混合粉体预压后在保护气氛下1500~1700℃进行无压烧结,制得高致密度的碳化硅陶瓷。
所述的高致密度的碳化硅陶瓷在高温冶金或发动机耐高温零部件领域中的应用。
与现有技术相比,本发明具有以下有益效果:
1.本发明以聚碳硅烷作为前驱体,通过对裂解温度的控制实现SiC烧结活性的调控,从本质上解决SiC烧结活性低的问题。
2.本发明可实现低温、低压条件下致密SiC陶瓷的制备,极大地降低其制备成本。
3.本发明可实现各种形状复杂大型结构件的制备,极大地促进SiC陶瓷的工程应用。
具体实施方式
下面结合具体实施例进一步说明本发明的内容,但不应理解为对本发明的限制。若未特别指明,实施例中所用的技术手段为本领域技术人员所熟知的常规手段。除非特别说明,本发明采用的试剂、方法和设备为本技术领域常规试剂、方法和设备。
实施例1
1.制备:
(1)以产率为60wt%的聚碳硅烷作为前驱体,以Al2O3-Y2O3为烧结助剂,将质量百分比为90%、5%和5%的聚碳硅烷、Al2O3与Y2O3用Si3N4球在辊式球磨下,以100r/min的转数进行球磨混合8h,制得混合粉体;
(2)在氮气气氛下,将混合粉体以5℃/min升温至800℃保温1h,得到裂解粉体;
(3)将裂解粉体装入烧结模具,经10MPa预压后放入烧结设备中,在氮气气氛下进行无压烧结,以10℃/min升温至1600℃,保温10min,制得致密的碳化硅(SiC)陶瓷。
2.性能测试:本实施例所得的碳化硅陶瓷的致密度为98%,维氏硬度为25GPa,抗弯强度为1000MPa,断裂韧性为8MPa·m1/2,在1200℃下高温强度为800MPa。
实施例2
与实施例1不同的在于:步骤(3)中所述碳化硅是以15℃/min升温至1700℃。
本实施例的碳化硅陶瓷的致密度为97%,维氏硬度为24GPa,抗弯强度为900MPa,断裂韧性为7MPa·m1/2,在1200℃下高温强度为700MPa。
实施例3
与实施例1不同的在于:步骤(1)中所述烧结助剂为Al2O3-Lu2O3,所述聚碳硅烷、Al2O3与Re2O3的质量百分比为94%、3%与3%。
本实施例所得的碳化硅陶瓷的致密度为99%,维氏硬度为26GPa,抗弯强度为1000MPa,断裂韧性为9MPa·m1/2,在1200℃下高温强度为800MPa。
实施例4
与实施例1不同的在于:步骤(3)中所述预压的压力为30MPa。
本实施例所得的碳化硅陶瓷的致密度为99%,维氏硬度为28GPa,抗弯强度为1000MPa,断裂韧性为7MPa·m1/2,在1200℃下高温强度为800MPa。
实施例5
与实施例1不同的在于:
步骤(3)中所述升温速率为200℃/min,所述保温时间为20min。
本实施例所得的碳化硅陶瓷的致密度为98%,维氏硬度为24GPa,抗弯强度为1000MPa,断裂韧性为10MPa·m1/2,在1200℃下高温强度为700MPa。
本发明的碳化硅陶瓷的致密度为97%以上,维氏硬度为20~30GPa,抗弯强度为700~1200MPa,断裂韧性为6~12MPa·m1/2,在1200℃下高温强度为600~1000MPa,可应用在高温冶金或发动机耐高温零部件领域中。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合和简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (10)
1.一种高致密度的碳化硅陶瓷,其特征在于,所述碳化硅陶瓷是以聚碳硅烷作为前驱体,以Al2O3-Re2O3为烧结助剂,将聚碳硅烷和Al2O3-Re2O3球磨混合后,保护气氛下,在500~1200℃裂解,所得碳化硅粉体经预压后在1500~1700℃进行烧结制得。
2.根据权利要求1所述的高致密度的碳化硅陶瓷,其特征在于,所述的碳化硅陶瓷的致密度为97%以上,维氏硬度为20~30GPa,抗弯强度为700~1200MPa,断裂韧性为6~12MPa·m1/2,在1200℃下高温强度为600~1000MPa。
3.根据权利要求1所述的高致密度的碳化硅陶瓷,其特征在于,所述Al2O3-Re2O3的纯度为99~99.9wt.%,所述Al2O3-Re2O3的粒径为0.01~2μm。
4.根据权利要求3所述的高致密度的碳化硅陶瓷,其特征在于,所述Re2O3中Re为Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu。
5.根据权利要求1所述的高致密度的碳化硅陶瓷,其特征在于,所述球磨为辊式球磨,是以乙醇为溶剂,以氮化硅球为球磨介质,球磨转速为500~150r/min,所述球磨的时间为8~24h。
6.根据权利要求1所述的高致密度的碳化硅陶瓷,其特征在于,所述聚碳硅烷和烧结助剂的质量比为(17~19):(1~3);所述烧结助剂中的Al2O3与Re2O3的质量比为(1~99):(1~99)。
7.根据权利要求1所述的高致密度的碳化硅陶瓷,其特征在于,所述裂解的升温速率为5~20℃/min,所述烧结的升温速率为5~15℃/min,所述烧结的时间为1~20min。
8.根据权利要求1所述的高致密度的碳化硅陶瓷,其特征在于,所述保护气氛为氮气或氩气。
9.根据权利要求1~8任一项所述的高致密度的碳化硅陶瓷的制备方法,其特征在于,包括以下具体步骤:
S1.将聚碳硅烷前驱体和烧结助剂Al2O3-Re2O3球磨混合后,保护气氛下,在500~1200℃裂解,得到混合粉体;
S2.将裂解所得混合粉体预压后在保护气氛下1500~1700℃进行无压烧结,制得高致密度的碳化硅陶瓷。
10.权利要求1~8任一项所述的高致密度的碳化硅陶瓷在高温冶金或发动机耐高温零部件领域中的应用。
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