CN112054097A - Purple light LED epitaxial structure and manufacturing method - Google Patents

Purple light LED epitaxial structure and manufacturing method Download PDF

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CN112054097A
CN112054097A CN202010713046.3A CN202010713046A CN112054097A CN 112054097 A CN112054097 A CN 112054097A CN 202010713046 A CN202010713046 A CN 202010713046A CN 112054097 A CN112054097 A CN 112054097A
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algan
layer
growing
barrier layer
quantum well
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解向荣
吴永胜
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Fujian Prima Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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Abstract

An epitaxial structure of a purple light LED and a manufacturing method thereof are provided, wherein the method comprises the following steps of S100, sputtering an ALN film on a substrate; s102, growing an AlGaN buffer layer on the ALN film; s103, growing a non-doped aluminum gallium nitrogen layer on the aluminum gallium nitrogen buffer layer; s104, growing a layer of N-type AlGaN on the undoped AlGaN; the invention reduces the defect caused by larger mismatch between the substrate and the ALGaN material by sputtering the ALN buffer layer on the substrate, thereby improving the crystal of the whole epitaxial layerThe mass reduces dislocation and defect in the quantum well structure, reduces non-radiative recombination generated by the defect, improves internal quantum effect, and effectively limits the Stark effect QCS in the quantum well structure through the aluminum gallium nitrogen barrier layer, and simultaneously Mg in the circulating structure is doped with ALxGa(1‑x)N increases the two-dimensional electron gas of the material interface, thereby improving the capability of injecting holes into the luminous zone and improving the recombination efficiency of electrons and holes in the luminous zone.

Description

Purple light LED epitaxial structure and manufacturing method
Technical Field
The invention relates to a structure design and a manufacturing method in the manufacturing of a light-emitting diode.
Background
In the future, compared with the traditional ultraviolet mercury lamp, the ALGaN-based UVC-LED has great advantages in the aspects of environmental protection and energy saving because of the characteristics of no use of mercury and no need of preheating, and brings new increasing requirements of the UVC-LED when the UVC-LED enters a large amount of commercial air conditioners, surface sterilization, water purification and other application markets in the future, but the UVC-LED structure needs an aluminum gallium nitrogen ALGaN material with high AL component, the existing growth technology cannot obtain the ALGaN material with low defect density, meanwhile, the ALGaN quantum well structure has larger spontaneous polarization and piezoelectric polarization phenomena to cause energy band bending and form a Stark effect QCSE, and the radiation recombination efficiency in the quantum well is very low, so that by reducing the Stark effect QCSE in the ALGaN quantum well structure, increasing the radiative recombination efficiency and thus increasing the luminous efficiency becomes a key technical problem.
The prior art has the following problems: at present, the main method for reducing the Stark effect QCSE of the ALGaN-based UVC-LED is to perform linear optimization on AL components in an ALGaN quantum barrier and an ALGaN barrier layer, so that the energy band bending of a quantum well is reduced, the aim of limiting the Stark effect QCSE is achieved, the recombination of electrons and holes is improved, and the recombination efficiency is improved. Prior art solution application No. 201510300906 has proposed the technical solutions of ALGaN and ALInGaN, 201811468293 also has the technical solutions of ALN and ALGaN. Aiming at the situation, a preparation method of a deep ultraviolet epitaxial wafer comprising a novel barrier layer (N circulation structures: aluminum nitride/ALxGa (1-x) N/ALaInbGa (1-a-b) N) is designed, so that the Stark effect QCSE can be effectively limited, and the hole injection effect is improved.
Disclosure of Invention
Therefore, it is necessary to provide an epitaxial wafer capable of improving the light emitting efficiency of the violet LED, so as to solve the problem of insufficient electron migration in the prior art.
A method for manufacturing an epitaxial structure of a purple light LED comprises the following steps,
s100, sputtering an ALN film on a substrate;
s102, growing an AlGaN buffer layer on the ALN film;
s103, growing a non-doped aluminum gallium nitrogen layer on the aluminum gallium nitrogen buffer layer;
s104, growing a layer of N-type AlGaN on the undoped AlGaN;
s105, growing a stress release layer on the N-type AlGaN;
s106, growing a high-temperature quantum well structure on the stress release layer;
s107, growing a light-emitting quantum well structure on the high-temperature quantum well structure;
s108, growing a barrier layer on the light-emitting quantum well structure, wherein the barrier layer is an aluminum gallium nitride barrier layer and comprises a plurality of circulations (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N)；
S109, growing a P-type aluminum gallium nitrogen structure on the barrier layer structure;
and S110, growing heavily doped P-type ALGaN on the P-type AlGaN.
Further, after the step S100, performing a step of performing a high temperature treatment on the ALN thin film buffer layer by using MOCVD at a temperature of 1200-;
specifically, step S100 is to sputter an ALN film with a thickness of 10-25nm on the sapphire substrate using a PECVD apparatus.
In particular, the AlGaN barrier layer comprises multiple cycles of (aluminum nitride/Mg doped AL)xGa(1-x)N/ALaInbGa(1-a-b)N)。
Further, the heavily doped P-type ALGaN layer described in step S110 has a thickness of 5-10nm, a Mg doping concentration of 4E21, and a pressure of 400-800 Torr.
An epitaxial structure of a purple light LED comprises the following parts which are sequentially grown on a substrate 1:
an ALN thin film 2;
an AlGaN buffer layer 3;
an undoped aluminum gallium nitride layer 4;
an N-type AlGaN layer 5;
a stress release layer 6;
a high temperature quantum well structure 7;
a light emitting quantum well structure 8;
barrier layer 9, being an AlGaN barrier layer, comprising a plurality of cycles (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N)；
A P-type AlGaN structure 10;
the P-type ALGaN 11 is heavily doped.
Further, the substrate is a sapphire substrate.
In particular, the AlGaN barrier layer comprises multiple cycles of (aluminum nitride/Mg doped AL)xGa(1-x)N/ALaInbGa(1-a-b)N)。
Specifically, the thickness of the heavily doped P-type ALGaN layer is 5-10nm, and the doping type is Mg doping.
The invention reduces the defect caused by larger mismatch between the sapphire and the ALGaN material by sputtering the ALN buffer layer on the sapphire, thereby improving the crystal quality of the whole epitaxial layer, reducing dislocation and defect in a quantum well structure, reducing non-radiative recombination caused by the defect, improving internal quantum effect, and on the other hand, the invention also passes through an aluminum gallium nitride barrier layer (containing aluminum nitride/Mg doped AL)xGa(1-x)N/ALaInbThe Ga (1-a-b) N) structure can effectively limit the Stark effect QCS in the quantum well structure, and simultaneously the Mg in the circulating structure is doped with ALxGa(1-x)N increases the two-dimensional electron gas at the material interface, thereby improving hole injection into the light emitting regionThe efficiency of recombination of electrons and holes in the light-emitting region is improved. Therefore, the high-quality ALGaN-based purple light LED epitaxial wafer is obtained, and the purple light LED epitaxial wafer is improved by about 5-35%.
Drawings
Fig. 1 is a schematic flow chart of a method for fabricating a violet epitaxial wafer according to an embodiment;
fig. 2 is a schematic structural diagram of a violet epitaxial wafer according to an embodiment.
Description of the reference numerals
1. Substrate:
2. an ALN film;
3. an AlGaN buffer layer;
4. an undoped aluminum gallium nitride layer;
5. an N-type AlGaN layer;
6. a stress release layer;
7. a high temperature quantum well structure;
8. a light emitting quantum well structure;
9. a barrier layer;
10. a P-type AlGaN structure;
11. and heavily doping the P-type ALGaN.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1, a method for fabricating an epitaxial structure of a violet LED includes the following steps,
a method for manufacturing an epitaxial structure of a purple light LED comprises the following steps,
s100, sputtering an ALN film on a substrate;
s102, growing an AlGaN buffer layer on the ALN film;
s103, growing a non-doped aluminum gallium nitrogen layer on the aluminum gallium nitrogen buffer layer;
s104, growing a layer of N-type AlGaN on the undoped AlGaN;
s105, growing a stress release layer on the N-type AlGaN;
s106, growing a high-temperature quantum well structure on the stress release layer;
s107, growing a light-emitting quantum well structure on the high-temperature quantum well structure;
s108, growing a barrier layer on the light-emitting quantum well structure, wherein the barrier layer is an aluminum gallium nitride barrier layer and comprises a plurality of circulations (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N)；
S109, growing a P-type aluminum gallium nitrogen structure on the barrier layer structure;
and S110, growing heavily doped P-type ALGaN on the grown P-type AlGaN.
The specific steps are described below with reference to specific examples.
S100, sputtering an ALN thin film with a certain thickness on the sapphire substrate by using PECVD equipment, wherein the specific thickness can be set between 10nm and 25nm, and the aim is to reduce the stress and defects between the sapphire and the ALGaN material due to lattice mismatch, so that the crystal quality of the subsequently grown ALGaN material is improved. In the above steps, the sputtering is performed by magnetron sputtering using a high-purity AL target and an ion gas such as argon, oxygen, etc. as a reaction source, using a temperature of 400-.
S101, MOCVD can be used to perform high temperature treatment on the growth ALN thin film buffer layer at the temperature of 1200-. The temperature, rotation speed and pressure not specifically mentioned are all environmental setting parameters for MOVCD, the same below. Through the steps, the ALN film buffer layer is respectively sputtered in two stages and high-temperature treatment is carried out, so that the defects caused by large mismatch between the sapphire and the ALGaN material can be reduced, the crystal quality of the whole epitaxial layer is improved, dislocation and defects in a quantum well structure are reduced, non-radiative recombination caused by the defects is reduced, and the internal quantum effect is improved.
S102, growing an AlGaN buffer layer on the ALN film by using MOCVD, wherein the thickness is 10-15nm, the temperature is 550-.
S103, growing a layer of undoped AlGaN layer on the AlGaN buffer layer, wherein the thickness of the undoped AlGaN layer is 1.5-1.8 microns, the temperature is 1100-1150 ℃, the rotating speed is 800-1200RPM, and the pressure is 50-750 Torr.
In a specific embodiment, the undoped ALGaN layer in step S103 is divided into four layers, the first layer has a temperature of 900-; the second layer temperature is 1050-; the third layer temperature is 900-1050 ℃, the TMGa dosage is 800sccm, the TMAL dosage is 120sccm, the fourth layer temperature is 1100-1150 ℃, the TMGa dosage is 1800sccm, and the TMAL dosage is 300 sccm.
S104, growing a layer of N-type AlGaN on the undoped AlGaN; the growth thickness is 1.5-2um, the temperature is 1000-1200 ℃, the rotation speed is 800-1200RPM, the pressure is 100-750Torr, and the doping concentration of Si is about 1E19-1E 20.
S105, growing a stress release layer on the N-type AlGaN; the thickness is 0.15-0.3um, the temperature is 700-1000 ℃, the rotation speed is 500-1200RPM, and the pressure is 100-750 Torr.
S106, growing a high-temperature quantum well structure (InGaN/ALGaN quantum well structure) on the stress release layer, wherein the high-temperature quantum well structure consists of 3-7 periods, the thickness is 0.05-0.25um, the temperature is 850-.
S107, forming a light-emitting quantum well structure (InGaN/ALGaN quantum well structure) on the high-temperature quantum well structure, wherein the light-emitting quantum well structure consists of 10-12 periods, the thickness is 0.1-1.0um, the temperature is 850-. The two quantum wells are continuously arranged, the former is high temperature, the latter is low temperature, the main reason is that the bottom temperature of the quantum wells is more than 1000 ℃, the temperature of the quantum wells of the light emitting area is usually 750 degrees (generally regarded as low temperature), if the low temperature quantum wells are directly grown in the reaction cavity after 1000 degrees, the quality of the quantum wells can be influenced, so that an MQW structure is added in the middle, the temperature is about 850 degrees, the purpose is to slowly reduce the temperature of the cavity, and the crystal quality of the temperature of the quantum wells of the light emitting area can be ensured.
S108, growing a novel barrier layer on the light-emitting quantum well structure, wherein the barrier layer comprises a plurality of cycles (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N), the specific embodiment can consist of 6-15 cycles, the thickness is 0.01-1.0um, the temperature is 850-. The barrier layer can effectively limit the Stark effect QCS in the quantum well structure. As a further example, the AlGaN barrier layer may be composed of (aluminum nitride/Mg doped with AL)xGa(1-x)N/ALaInbGa(1-a-b)N) structure. Mg-doped AL in simultaneous cyclic structuresxGa(1-x)N increases the two-dimensional electron gas of the material interface, thereby improving the capability of injecting holes into the luminous zone and improving the recombination efficiency of the electrons and the holes in the luminous zone.
S109, growing a P-type aluminum gallium nitrogen structure on the barrier layer structure, wherein the thickness is 20-100 nm, and the Mg doping concentration is 1E20-5E 20;
s110, growing heavily doped P-type ALGaN on the grown P-type AlGaN, wherein the purpose of adding the heavily doped P-type ALGaN is to form good gold half contact by using a metal electrode on an ALGaN semiconductor material in the chip manufacturing process, wherein the thickness of the layer is 5-10nm, the Mg doping concentration is 4E21, and the pressure is 400-800 Torr. In the preferred embodiment, the pressure can be 650Torr in the manufacturing of the heavily doped P-type ALGaN structure, under the condition, the doping efficiency of Mg in the ALGaN material is optimal, the amount of Mg sources used in the production process can be reduced, so that Mg-containing byproducts are reduced to be merged into the ALGaN material, and further the scattering of the Mg byproducts to light is reduced to a certain extent, and the light extraction efficiency is improved.
And finally, carrying out annealing treatment on the ALGaN material under the N2 environment to finish the growth of the purple light LED epitaxial wafer.
In certain further embodiments, the composition of the barrier layer is also modifiedFurther is (aluminum nitride/MgNb doped AlxGa(1-x)N/ALaInbGa(1-a-b)N), the Mg and Nb elements are doped in the middle layer, two-dimensional electron gas of a material interface can be improved better, and therefore the capability of injecting holes into a luminous zone is improved. After thousands of experiments, the scheme obtains that the injection capability of the hole can be solved by trace doping of niobium and Mg. Compared with the LED with the ALN/ALGaN barrier layer as the comparison sample in the prior art, the luminous capacity is improved by 5% -35%.
In the embodiment shown in fig. 2, the present solution further provides an epitaxial structure of a violet LED, which includes the following sequentially grown parts on the substrate 1:
an ALN thin film 2;
an AlGaN buffer layer 3;
an undoped aluminum gallium nitride layer 4;
an N-type AlGaN layer 5;
a stress release layer 6;
a high temperature quantum well structure 7;
a light emitting quantum well structure 8;
barrier layer 9, being an AlGaN barrier layer, comprising a plurality of cycles (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N)；
A P-type AlGaN structure 10;
the P-type ALGaN 11 is heavily doped.
The epitaxial structure is designed to have the specific thickness of 10-25nm by designing the ALN thin film, and aims to reduce the stress and defects between sapphire and the ALGaN material due to lattice mismatch, so that the crystal quality of the subsequently grown ALGaN material is improved. Also by designing an AlGaN barrier layer (comprising aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N) structure can effectively limit the Stark effect QCS in the quantum well structure, thereby improving the light efficiency of the purple light LED epitaxial wafer。
In a further embodiment, the substrate of the structure is an M-type sapphire substrate.
In particular, the AlGaN barrier layer comprises multiple cycles of (aluminum nitride/Mg doped AL)xGa(1-x)N/ALaInbGa(1-a-b)N)。
Specifically, the thickness of the heavily doped P-type ALGaN layer is 5-10nm, and the doping type is Mg doping. The doping efficiency of Mg in the ALGaN material is optimal, and the use amount of a Mg source in the production process can be reduced, so that Mg-containing byproducts are reduced to be merged into the ALGaN material, the scattering of the Mg byproducts to light is reduced to a certain degree, and the light extraction efficiency is improved.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed by the contents of the present specification and the attached drawings, which are included in the scope of the present patent.

Claims (9)

1. A method for manufacturing an epitaxial structure of a purple light LED is characterized by comprising the following steps,
s100, sputtering an ALN film on a substrate;
s102, growing an AlGaN buffer layer on the ALN film;
s103, growing a non-doped aluminum gallium nitrogen layer on the aluminum gallium nitrogen buffer layer;
s104, growing a layer of N-type AlGaN on the undoped AlGaN;
s105, growing a stress release layer on the N-type AlGaN;
s106, growing a high-temperature quantum well structure on the stress release layer;
s107, growing a light-emitting quantum well structure on the high-temperature quantum well structure;
s108, in the luminescent quantum wellStructurally growing a barrier layer, said barrier layer being an AlGaN barrier layer comprising a plurality of cycles (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N)；
S109, growing a P-type aluminum gallium nitrogen structure on the barrier layer structure;
and S110, growing heavily doped P-type ALGaN on the grown P-type AlGaN.
2. The method for fabricating an epitaxial structure of a violet LED according to claim 1, wherein the step S100 is followed by a step of performing a high temperature treatment on the ALN thin film buffer layer by MOCVD at a temperature of 1200 ℃ to 1300 ℃, a rotation speed of 1000 ℃ to 1200RPM, and a pressure of 200 ℃ to 750 Torr.
3. The method for fabricating an epitaxial structure of a violet LED according to claim 1,
step S100 is specifically to sputter an ALN film with the thickness of 10-25nm on the sapphire substrate by using PECVD equipment.
4. The method of claim 1, wherein the AlGaN barrier layer comprises multiple cycles of (aluminum nitride/Mg doped AL)xGa(1-x)N/ALaInbGa(1-a-b)N)。
5. The method as claimed in claim 1, wherein the heavily doped P-type ALGaN layer in step S110 has a thickness of 5-10nm, a Mg doping concentration of 4E21, and a pressure of 400-800 Torr.
6. An epitaxial structure of a purple light LED is characterized by comprising the following parts which are sequentially grown on a substrate:
an ALN film;
an AlGaN buffer layer;
an undoped aluminum gallium nitride layer;
an N-type AlGaN layer;
a stress release layer;
a high temperature quantum well structure;
a light emitting quantum well structure;
a barrier layer, the barrier layer being an AlGaN barrier layer comprising a plurality of cycles of (aluminum nitride/AL)xGa(1-x)N/ALaInbGa(1-a-b)N)；
A P-type AlGaN structure;
and heavily doping the P-type ALGaN.
7. The epitaxial structure of a violet LED of claim 6, wherein the substrate is a sapphire substrate.
8. Epitaxial structure for violet LED according to claim 6, characterized in that the aluminum gallium nitride barrier layer comprises multiple cycles (aluminum nitride/Mg doped AL)xGa(1-x)N/ALaInbGa(1-a-b)N)。
9. The epitaxial structure of a violet LED of claim 6, wherein the heavily doped P-type ALGaN layer is 5-10nm thick and the doping type is Mg doping.
CN202010713046.3A 2020-07-22 2020-07-22 Purple light LED epitaxial structure and manufacturing method Pending CN112054097A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488565A (en) * 2021-06-23 2021-10-08 山西中科潞安紫外光电科技有限公司 Preparation method of aluminum nitride film
CN115036402A (en) * 2022-08-12 2022-09-09 江苏第三代半导体研究院有限公司 Induced enhanced Micro-LED homoepitaxy structure and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488565A (en) * 2021-06-23 2021-10-08 山西中科潞安紫外光电科技有限公司 Preparation method of aluminum nitride film
CN113488565B (en) * 2021-06-23 2022-11-29 山西中科潞安紫外光电科技有限公司 Preparation method of aluminum nitride film
CN115036402A (en) * 2022-08-12 2022-09-09 江苏第三代半导体研究院有限公司 Induced enhanced Micro-LED homoepitaxy structure and preparation method thereof

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