CN112052636A - BSIMSOI-based FDSOI MOSFET device modeling method and device - Google Patents
BSIMSOI-based FDSOI MOSFET device modeling method and device Download PDFInfo
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- 230000005477 standard model Effects 0.000 claims abstract description 15
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
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- 238000003786 synthesis reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
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Abstract
The invention discloses a BSIMSOI-based FDSOI MOSFET device modeling method and a device, which are applied to the field of integrated circuit design and comprise the following steps: extracting a front channel model parameter and a back channel model parameter according to the FDSOI MOSFET device; generating a BSIMSOI positive channel device model based on the positive channel model parameters and the BSIMSOI standard model, and generating a BSIMSOI back channel device model based on the back channel model parameters and the BSIMSOI standard model; and connecting the BSIMSOI back channel device model with the BSIMSOI front channel device model in a controlled source mode to obtain a target FDSOI MOSFET device model. The invention greatly improves the model precision of the device under the condition of opening the back channel.
Description
Technical Field
The invention relates to the field of integrated circuit design, in particular to a BSIMSOI-based FDSOI MOSFET device modeling method and device.
Background
The requirements of high reliability, high performance and low cost must be considered when designing an integrated circuit, and in the CAD software of the integrated circuit, a device model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a key link for linking the function and performance of an IC design and an IC product. Along with the size of an integrated device is smaller and smaller, the integrated scale is larger and larger, the working procedure of an integrated circuit is more and more complex, and the requirement on the precision of a device model is higher and higher.
Currently, the industry is able to use FDSOI (Fully Depleted-Silicon-On-Insulator), and the currently established mosfet device model will have a drastically degraded accuracy when the back gate bias is large enough to open the back channel.
Disclosure of Invention
In view of the above technical problems in the prior art, embodiments of the present invention provide a method and an apparatus for modeling a BSIMSOI-based FDSOI MOSFET device.
In a first aspect, an embodiment of the present invention provides a method for modeling a BSIMSOI-based FDSOI MOSFET device, including:
extracting a front channel model parameter and a back channel model parameter according to the FDSOI MOSFET device;
generating a BSIMSOI positive channel device model based on the positive channel model parameters and the BSIMSOI standard model, and generating a BSIMSOI back channel device model based on the back channel model parameters and the BSIMSOI standard model;
and connecting the BSIMSOI back channel device model with the BSIMSOI positive channel device model in a controlled source mode to obtain a target FDSOI MOSFET device model.
Optionally, the extracting the front channel model parameter and the back channel model parameter according to the FDSOI MOSFET device includes:
extracting a positive channel model parameter of the FDSOI MOSFET device when a back channel of the FDSOI MOSFET device is in a non-opening state;
and extracting back channel model parameters of the FDSOI MOSFET device when the front channel of the FDSOI MOSFET device is in a non-opening state.
Optionally, the extracting back channel model parameters of the FDSOI MOSFET device includes:
extracting the back gate oxide thickness of the FDSOI MOSFET device as the gate oxide thickness of the BSIMSOI back channel device model, an
Extracting the gate oxide thickness of the FDSOI MOSFET device as the back gate oxide thickness of the BSIMSOI back channel device model, an
And extracting the back channel current of the FDSOI MOSFET device as the positive channel current of the BSIMSOI back channel device model.
Optionally, the connecting the bsimson back channel device model with the bsimson front channel device model in a controlled source form to obtain a target FDSOI MOSFET device model includes:
adding a positive gate voltage to a back gate of the BSIMSOI back channel device model, adding a back gate voltage to a positive gate of the BSIMSOI back channel device model, and adding a drain voltage to a drain of the BSIMSOI back channel device model;
connecting a controlled source in parallel on the BSIMSOI positive channel device model, wherein the controlled source is a voltage control current source or a current control current source;
introducing the back channel current of the BSIMSOI back channel device model to the controlled source, and obtaining the total current of the target FDSOI MOSFET device model as the sum of the current of the BSIMSOI back channel device model and the current of the BSIMSOI positive channel device model.
Optionally, the introducing the back channel current of the BSIMSOI back channel device model to the controlled source includes:
arranging a first resistor on a drain electrode of the BSIMSOI back channel device model;
introducing a current or voltage across the first resistance to the controlled source.
Optionally, the resistance value of the first resistor is smaller than a preset resistor threshold.
In a second aspect, an embodiment of the present invention provides a modeling apparatus for a BSIMSOI-based FDSOI MOSFET device, including:
the model parameter extraction unit is used for extracting a front channel model parameter and a back channel model parameter according to the FDSOI MOSFET device;
the model generating unit is used for generating a BSIMSOI positive channel device model based on the positive channel model parameters and a BSIMSOI standard model and generating a BSIMSOI back channel device model based on the back channel model parameters and the BSIMSOI standard model;
and the model merging unit is used for connecting the BSIMSOI back channel device model with the BSIMSOI positive channel device model in a controlled source mode to obtain a target FDSOI MOSFET device model.
In a third aspect, an embodiment of the present invention provides a BSIMSOI-based FDSOI MOSFET device model, including:
the BSIMSOI back channel device model is generated based on back channel model parameters and the BSIMSOI standard model, wherein the BSIMSOI back channel device model is connected with the BSIMSOI front channel device model in a controlled source mode, and the front channel model parameters and the back channel model parameters are extracted according to an FDSOI MOSFET device.
According to the technical scheme provided by the embodiment of the invention, on the basis of the BSIMSOI device model in the industry standard, the BSIMSOI back channel device model is connected to the BSIMSOI front channel device model in a controlled source form to obtain the synthesis model, so that the back channel current is introduced into the BSIMSOI front channel device model in the controlled source form, the change of the coupling characteristic of the back gate bias to the front channel when the back channel is opened can be responded, and the device model precision under the condition of opening the back channel is greatly improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for modeling an FDSOI MOSFET device based on a BSIMSOI (Berkeley Short-channel IGFET model SOI, Berkeley SOI Short-channel insulated gate field effect transistor model) according to an embodiment of the present invention;
FIG. 2 is an equivalent circuit diagram of a model of a target FDSOI MOSFET device in an embodiment of the present invention;
fig. 3 is a comparison of simulation and test data for a target FDSOI MOSFET device model and a prior FDSOI MOSFET device model in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The embodiments of the present invention and the technical features in the embodiments may be combined with each other without conflict. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative effort belong to the protection scope of the present invention.
In a first aspect, an embodiment of the present invention provides a BSIMSOI-based FDSOI MOSFET device modeling method, which introduces a back channel current into a BSIMSOI front channel device model to cope with a coupling characteristic change of a back gate bias to a front channel when the back channel is turned on.
Referring to fig. 1 and fig. 2, a method for modeling a BSIMSOI-based FDSOI MOSFET device according to an embodiment of the present invention is described in more detail:
referring to fig. 1, the method for modeling the BSIMSOI-based FDSOI MOSFET device includes the following steps:
s1, extracting a front channel model parameter and a back channel model parameter according to the FDSOI MOSFET device;
specifically, extracting a positive channel model parameter of the FDSOI MOSFET device when a back channel of the FDSOI MOSFET device is in a non-opening state; and extracting back channel model parameters of the FDSOI MOSFET device when the front channel of the FDSOI MOSFET device is in a non-opening state.
In the embodiment of the present invention, the types of the extracted forward channel model parameters and back channel model parameters are many, and reference may be made to the prior art specifically, and only some important model parameters are listed below, but the present invention is not limited thereto.
Specifically, the parameters of the front channel model and the parameters of the back channel model include, but are not limited to, the following types of model parameters: top layer silicon film thickness (Tsi), back gate oxygen thickness (tbox); positive gate oxide thickness (tox); the amount of change in tox used to fit the CV: dtoxcv (does not affect dc characteristics); junction depth xj; substrate doping concentration nsub, inversion layer channel doping concentration Nch and polysilicon gate doping concentration ngate.
Specifically, the extracted values of the parameters of each positive channel model are as follows: tsi-5E-8; tbox 1.45E-7; tox is 4E-9; dtoxcv is 0; xj-1E-7; nch ═ 1.7E 17; nsub ═ 6E 16; ngate is 0.
Specifically, the extracted values of the back channel model parameters are as follows: tsi-5E-8 tbox-4E-9; tox is 1.45E-7; dtoxcv is 0; xj-1E-7; nch ═ 1.7E 17; nsub ═ 6E 16; ngate is 0.
And S2, generating a BSIMSOI positive channel device model based on the extracted positive channel model parameters.
Specifically, the extracted back gate oxygen thickness of the FDSOI MOSFET device is used as the back gate oxygen thickness of the BSIMSOI positive channel device model, the gate oxygen thickness of the FDSOI MOSFET device is used as the gate oxygen thickness of the BSIMSOI positive channel device model, and the back channel current of the FDSOI MOSFET device is used as the back channel current of the BSIMSOI back channel device model.
S3, generating a BSIMSOI back channel device model based on the extracted back channel model parameters;
specifically, the extracted back gate oxide thickness of the FDSOI MOSFET device is used as the gate oxide thickness of the BSIMSOI back channel device model, the gate oxide thickness of the FDSOI MOSFET device is used as the back gate oxide thickness of the BSIMSOI back channel device model, and the back channel current of the FDSOI MOSFET device is used as the front channel current of the BSIMSOI back channel device model.
And S4, connecting the BSIMSOI back channel device model with the BSIMSOI positive channel device model in a controlled source mode to obtain a target FDSOI MOSFET device model.
Actually, the back channel current of the BSIMSOI back channel device model is introduced into the BSIMSOI front channel device model in a controlled source mode, and the target FDSOI MOSFET device model is obtained.
In step S4, a back gate voltage is applied to a back gate of the bsimson positive channel device model, a positive gate voltage is applied to a positive gate of the bsimson positive channel device model, and a drain voltage is applied to a drain of the bsimson positive channel device model; and applying a positive gate voltage to a back gate of the BSIMSOI back channel device model. The back grid voltage is added to the front grid of the BSIMSOI back channel device model, and the drain voltage is added to the drain of the BSIMSOI back channel device model. Connecting a controlled source in parallel on a BSIMSOI positive channel device model; introducing the back channel current of the BSIMSOI back channel device model to a controlled source, so that the total current of the target FDSOI MOSFET device model is the sum of the current of the BSIMSOI back channel device model and the current of the BSIMSOI positive channel device model.
Reference is now made to the equivalent circuit diagram of the synthesis model shown in FIG. 2, M in FIG. 21For BSIMSOI positive channel device model, M2The BSIMSOI back channel device model. Referring to fig. 2, controlled sources are connected in parallel on a bsimson front channel device model, that is, controlled sources are connected in parallel between a source and a drain of M1, a front gate voltage is applied to a back gate of the bsimson back channel device model, a back gate voltage is applied to a front gate of the bsimson back channel device model, and a drain voltage is applied to a drain of the bsimson back channel device model. Next, the detailed description of step S4 is made with reference to fig. 2:
for forward channel device model M1Middle-lead back channel device model M2Back channel current of (1), in a back channel device model M2Is provided with a first drain electrodeResistance R1A specific first resistance R1Is less than a predetermined resistance threshold. Such as a first resistor R1Is 1 ohm, so that R1The voltage and current on are equal.
A first resistor R1Current on to a positive channel device model M1The parallel current control current source is connected with: f1＝iR1Or a first resistance R1Voltage of (3) into a positive channel device model M1Parallel controlled sources (G)1＝VR1) Rather than direct parallel connection of devices. The controlled source is specifically a voltage control current source G1 or a current control current source F1, and the introduction of the back channel current of the back channel device model M2 into the positive channel device model M1 is realized through a first resistor R1 arranged at the drain D of the back channel device model M2 and a voltage control current source G1 (or a current control current source F1) connected in parallel with the positive channel device model M1, so that the target FDSOI MOSFET device model simultaneously comprises the positive channel current and the back channel current, and the device model accuracy under the back channel opening condition is greatly improved.
Referring to the comparison of simulation and test data of the target FDSOI MOSFET device model shown in fig. 3 and the existing FDSOI MOSFET device model, it can be seen that, under the condition that the back channel is turned on, Id-Vg characteristic data (shown as simulation result a) obtained by simulating the FDSOI MOSFET device model obtained by the embodiment of the present invention is closer to an Id-Vg curve obtained based on the test data, while Id-Vg characteristic data (shown as simulation result B) obtained by simulating the existing FDSOI MOSFET device model deviates farther. Therefore, the model of the FDSOI MOSFET device established by the embodiment of the invention has higher precision.
In addition, the embodiment of the invention does not simply combine the devices, so that the influence of the simple combination of two device models on the capacitance of the device is avoided.
In a second aspect, based on the same inventive concept, an embodiment of the present invention provides a BSIMSOI-based FDSOI MOSFET device modeling apparatus, including:
the model parameter extraction unit is used for extracting a front channel model parameter and a back channel model parameter according to the FDSOI MOSFET device;
the model generating unit is used for generating a BSIMSOI positive channel device model based on the positive channel model parameters and a BSIMSOI standard model and generating a BSIMSOI back channel device model based on the back channel model parameters and the BSIMSOI standard model;
and the model merging unit is used for connecting the BSIMSOI back channel device model with the BSIMSOI positive channel device model in a controlled source mode to obtain a target FDSOI MOSFET device model.
In a third aspect, based on the same inventive concept, an embodiment of the present invention provides a BSIMSOI-based FDSOI MOSFET device model, including:
the BSIMSOI back channel device model is generated based on back channel model parameters and the BSIMSOI standard model, wherein the BSIMSOI back channel device model is connected with the BSIMSOI front channel device model in a controlled source mode, and the front channel model parameters and the back channel model parameters are extracted according to an FDSOI MOSFET device.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A BSIMSOI-based FDSOIMOSFET device modeling method is characterized by comprising the following steps:
extracting a positive channel model parameter and a back channel model parameter according to the FDSOIMOSFET device;
generating a BSIMSOI positive channel device model based on the positive channel model parameters and the BSIMSOI standard model, and generating a BSIMSOI back channel device model based on the back channel model parameters and the BSIMSOI standard model;
and connecting the BSIMSOI back channel device model with the BSIMSOI positive channel device model in a controlled source mode to obtain a target FDSOI MOSFET device model.
2. The method of claim 1, wherein said extracting the positive channel model parameters and the back channel model parameters from the fdsoi imosfet device comprises:
extracting a positive channel model parameter of the FDSOI MOSFET device when a back channel of the FDSOI MOSFET device is in an unopened state;
and extracting back channel model parameters of the FDSOI MOSFET device when the positive channel of the FDSOI MOSFET device is in a non-opening state.
3. The method of claim 2, wherein said extracting back-channel model parameters for said fdsoi imosfet device comprises:
extracting the back gate oxide thickness of the FDSOIMOSFET device as the gate oxide thickness of the BSIMSOI back channel device model, and
extracting the gate oxide thickness of the FDSOIMOSFET device as the back gate oxide thickness of the BSIMSOI back channel device model, and
and extracting the back channel current of the FDSOIMOSFET device as the positive channel current of the BSIMSOI back channel device model.
4. The method of claim 1, wherein the connecting the BSIMSOI back-channel device model with the BSIMSOI positive-channel device model in a controlled source form to obtain a target FDSOI MOSFET device model, comprises:
adding a positive gate voltage to a back gate of the BSIMSOI back channel device model, adding a back gate voltage to a positive gate of the BSIMSOI back channel device model, and adding a drain voltage to a drain of the BSIMSOI back channel device model;
connecting a controlled source in parallel on the BSIMSOI positive channel device model, wherein the controlled source is a voltage control current source or a current control current source;
introducing the back channel current of the BSIMSOI back channel device model to the controlled source, and obtaining the total current of the target FDSOIMOSFET device model as the sum of the current of the BSIMSOI back channel device model and the current of the BSIMSOI positive channel device model.
5. The method of claim 4, wherein the introducing back channel current of the BSIMSOI back channel device model to the controlled source comprises:
arranging a first resistor on a drain electrode of the BSIMSOI back channel device model;
introducing a current or voltage across the first resistance to the controlled source.
6. The method of claim 5, wherein the first resistor has a resistance value less than a predetermined resistor threshold.
7. The device for modeling the FDSOIMOSFET device based on the BSIMSOI is characterized by comprising the following components:
the model parameter extraction unit is used for extracting a front channel model parameter and a back channel model parameter according to the FDSOI MOSFET device;
the model generating unit is used for generating a BSIMSOI positive channel device model based on the positive channel model parameters and a BSIMSOI standard model and generating a BSIMSOI back channel device model based on the back channel model parameters and the BSIMSOI standard model;
and the model merging unit is used for connecting the BSIMSOI back channel device model with the BSIMSOI positive channel device model in a controlled source mode to obtain a target FDSOIMOSFET device model.
8. A BSIMSOI-based FDSOIMOSFET device model is characterized by comprising the following components:
the BSIMSOI back channel device model is generated based on back channel model parameters and the BSIMSOI standard model, wherein the BSIMSOI back channel device model is connected with the BSIMSOI front channel device model in a controlled source mode, and the front channel model parameters and the back channel model parameters are extracted according to an FDSOI MOSFET device.
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| CN112883675A (en) * | 2021-03-10 | 2021-06-01 | 中国科学院微电子研究所 | Semiconductor device modeling method and device |
| CN112883675B (en) * | 2021-03-10 | 2024-05-14 | 中国科学院微电子研究所 | Semiconductor device modeling method and device |
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