CN112038427B - Gallium oxide-based heterojunction integrated photoelectric chip, remote ultraviolet array monitor and manufacturing method thereof - Google Patents
Gallium oxide-based heterojunction integrated photoelectric chip, remote ultraviolet array monitor and manufacturing method thereof Download PDFInfo
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 45
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 101
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims abstract description 42
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims abstract description 42
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 42
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 30
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- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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Abstract
The invention relates to a gallium oxide-based heterojunction integrated photoelectric chip, a remote ultraviolet array monitor and a manufacturing method thereof2O3Circular films and composite films; the composite film comprises La which is positioned on the same plane and is arranged into a circle2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3A film; the composite film is characterized by further comprising an upper Ti/Au film electrode and a lower Ti/Au film electrode which are in one-to-one correspondence, wherein the upper Ti/Au film electrode is formed on the composite film and is respectively connected with the La2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The films correspond one to one, and the lower Ti/Au film electrode is positioned at Sn: beta-Ga2O3Round film. The gallium oxide-based heterojunction integrated chip prepared by the invention has stable performance, high responsivity and sensitivity to ultraviolet spectrum with wide wavelength band, small dark current, intelligent identification of ultraviolet wavelength and great application prospect.
Description
Technical Field
The invention belongs to the technical field of ultraviolet monitoring devices, and particularly relates to a gallium oxide-based heterojunction integrated photoelectric chip, a UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength and a preparation method thereof.
Background
Common ultraviolet bands are between 200nm and 380nm, different bands have different functions and can be used in different application fields, wherein UVA (320nm to 380nm) is used in the field of ultraviolet curing; UVB (280nm-320nm) is used for ultraviolet health promotion; UVC (200nm-280nm) has a strong bactericidal effect and is mainly used in places needing ultraviolet sterilization and disinfection, such as hospitals, disease control centers, kindergartens and dining halls.
Although the existing ultraviolet rays are widely used, the ultraviolet rays have the disadvantages that the longer the ultraviolet rays are used, the weaker the radiation intensity is, and the sterilizing effect is continuously attenuated. Whether the radiation intensity and the wave band range of the ultraviolet rays are qualified or not is difficult to perceive, so that the application effect is influenced, and the existing ultraviolet detector usually aims at the measurement of a certain wave band and cannot directly judge whether the ultraviolet wave band meets the use requirement or not. Therefore, it is required to develop an apparatus for monitoring the intensity of ultraviolet rays in real time and having an identified wavelength range to ensure the use effect of the ultraviolet rays.
Disclosure of Invention
The invention aims to provide a gallium oxide-based heterojunction integrated photoelectric chip with high sensitivity, good stability and continuously adjustable wavelength, which can intelligently identify the wavelength of ultraviolet rays, monitor the intensity of a certain specific ultraviolet wavelength and realize remote supervision, and a manufacturing method thereof.
The technical scheme of the invention is as follows:
a wide-range gallium oxide-based heterojunction integrated photoelectric chip is characterized in that: comprises a sapphire single crystal substrate and Sn, beta-Ga which are arranged in sequence2O3Circular films and composite films; wherein the composite film comprises La which is positioned on the same plane and is arranged into a circle2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The film is formed by Sn, beta-Ga2O3La can be formed by forming a plurality of composite films on the circular film2O3/Sn:β-Ga2O3、ZnO/Sn:β-Ga2O3、NiO/Sn:β-Ga2O3、Tb2O3/Sn:β-Ga2O3、Ta2O5/Sn:β-Ga2O3、Sm2O3/Sn:β-Ga2O3、Nd2O3/Sn:β-Ga2O3And Zn beta-Ga2O3/Sn:β-Ga2O3A heterojunction structure of ZnO, NiO, Tb2O3、Ta2O5、Sm2O3、Nd2O3、Zn:β-Ga2O3And La2O3Having forbidden band widths of 3.2eV, 3.5eV, 3.8eV, 4.0eV, 4.4eV, 4.7eV, 4.9eV, and 5.5eV, respectively, corresponding to the ultraviolet absorption cutoff waveThe array detection chip has the characteristics of continuous adjustment of UV-C/B/A ultraviolet wavelength, and has the length of 387nm, 354nm, 326nm, 310nm, 281nm, 264nm, 254nm and 226 nm. Further, the ultraviolet wavelength range can be expanded, and the wide application is facilitated. And the composite film comprises a plurality of films which are positioned on the same plane and are arranged into a circle, so that the integration level can be improved and the volume can be reduced while each heterojunction of the composite film can work normally.
The composite film is characterized by further comprising an upper Ti/Au film electrode and a lower Ti/Au film electrode which are in one-to-one correspondence, wherein the upper Ti/Au film electrode is formed on the composite film and is respectively connected with the La2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The films correspond one to one, and the lower Ti/Au film electrode is positioned at Sn: beta-Ga2O3Round film. Thus, each heterojunction can be connected, and the normal operation without the heterojunction is ensured. Furthermore, the upper Ti/Au thin film electrode is a triangular annular thin film electrode, and the shape of the upper Ti/Au thin film electrode is an annular isosceles triangle with the bottom edge being 2mm and the height being 4mm, so that the upper Ti/Au thin film electrode is opposite to each thin film of the composite thin film, the contact area is increased, and the contact firmness degree and the conductivity are improved; the lower Ti/Au thin film electrode is circular and is in the shape of a circle with the radius of 1mm, and the Sn, beta-Ga, thin film electrode of the lower Ti/Au thin film electrode is positioned at the periphery of the composite thin film2O3A circular film; the thickness of the Ti film electrode is 30-40nm, the thickness of the Au film electrode is 90-120nm above the Ti film electrode, and the contact firmness degree and the conductivity are improved.
Further, the Sn is beta-Ga2O3The thickness of the circular film is 300-500nm, and the doping concentration of Sn is 3-5 at%. The La 2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The thickness of the film is 200-300nm, and the doping concentration of Zn is 3-5 at%. By adopting the thickness and the doping concentration, the requirement can be effectively obtainedThe forbidden bandwidth is obtained, the balance of ultraviolet wavelength is utilized, and compared with other doping concentrations, the doping concentration of the invention has better performance of the obtained chip.
Further, the Sn is beta-Ga2O3The area of the circular film is the same as that of the sapphire single crystal substrate, and the area of the composite film is Sn: beta-Ga2O34/9 for circular membrane area. Therefore, the work of each heterojunction can be effectively ensured, the size of the chip can be reduced, and the miniaturization is utilized.
Further, the La2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The film is in a fan-shaped structure, so that the area of each film can be ensured as much as possible in a limited space, the space is effectively utilized, and the normal work of the heterojunction is ensured.
A wavelength continuously adjustable UV-C/B/a remote ultraviolet array monitor comprising a gallium oxide based heterojunction integrated optoelectronic chip of any of the above; the device also comprises an ultraviolet photoelectric detection peripheral circuit, a signal processing module, an IOT communication module, an AMR core control module and a data storage chip. The remote ultraviolet array monitor can remotely send monitoring information to the Internet of things terminal to realize remote supervision.
The manufacturing method for preparing the UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength comprises the following steps:
(1) preparing a gallium oxide-based heterojunction integrated photoelectric chip:
placing a c-plane sapphire circular single crystal substrate into V (H) (HF)2O2) Soaking in a solution of 5 to remove a natural oxidation layer, then respectively ultrasonically cleaning by using acetone, ethanol and deionized water, and carrying out vacuum drying; ga of 99.99% purity2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The target materials are respectively placed on the multi-target laserPosition of target table of pulse deposition system at Ga2O3Placing an Sn metal ring around the target glow ring, fixing the processed c-plane sapphire circular single crystal substrate on a sample holder, and putting the sample holder into a vacuum chamber, wherein the distance between each target and the c-plane sapphire circular single crystal substrate is 5 cm; vacuumizing the cavity, introducing argon, adjusting the pressure in the vacuum cavity, heating the sapphire single crystal substrate, and growing Sn-doped Ga2O3Film of Sn, beta-Ga2O3After the film grows, Ga is put into the manipulator2O3The Sn metal ring above the target is replaced by a Zn metal ring, a hollow fan-shaped mask is inserted below the sample table, and Zn-doped beta-Ga continues to grow2O3Film of Zn, beta-Ga2O3After the film grows, rotating the hollow fan-shaped mask to ensure that the doping of Sn and Zn is smoothly carried out, avoiding the interference of oxidation and the like, introducing oxygen, wherein the flow ratio of argon to oxygen is 3:1, and sequentially growing La 2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3A film, wherein the pressure of the evacuated chamber is 1 × 10-4Pa, the pressure of the cavity is 1-2Pa when the c-plane sapphire circular single crystal substrate is heated, the pressure of the cavity after oxygen is introduced is 5-10Pa, and the laser energy is 200mJ/cm2The laser pulse frequency is 1Hz, the wavelength of the laser is 248nm, the heating temperature of the c-plane sapphire circular single crystal substrate before the oxygen is introduced is 600-700 ℃, the heating temperature of the c-plane sapphire circular single crystal substrate after the oxygen is introduced is 500-600 ℃, and the reason for adopting the temperature parameters ensures the smooth proceeding of doping and reduces the formed Sn: beta-Ga2O3Thin film and Zn doped beta-Ga2O3Influence of the film, Sn:. beta. -Ga2O3The deposition time of the film is 1.5-3 h; because of different materials and inconsistent film growth rate, the Zn, beta-Ga and the like are set to keep the thickness of the epitaxial film at 200-300nm2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3Deposition time of thin film1-2h, 2-4h, 0.5-1h, 2-3h, 2-4h and 1.5-2h respectively; after all the films are grown, in-situ annealing is carried out in the cavity for 0.5 to 1.0 hour at the annealing temperature of 650 ℃, and the forming quality of the heterojunction is improved;
(2) and (3) manufacturing an electrode:
using a mask plate and adopting a radio frequency magnetron sputtering technology to form La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3、Nd2O3And Zn beta-Ga2O3A Ti/Au triangular annular film is respectively deposited on the fan-shaped film, and the Ti/Au triangular annular film is formed on the Sn, beta-Ga 2O3Depositing a Ti/Au circular film on the circular film, wherein the Ti/Au triangular annular film corresponds to the Ti/Au circular film one by one;
(3) assembling:
an ultraviolet photoelectric detection peripheral circuit is designed, and a gallium oxide-based heterojunction integrated photoelectric chip with an electrode, a signal processing module, an IOT communication module, an AMR core control module and a data storage chip are connected into a photoelectric detection circuit to assemble the UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength.
The gallium oxide-based heterojunction integrated chip is composed of a heterojunction film formed by a semiconductor with a continuously variable forbidden band width of 5.5-3.2eV and gallium oxide, and corresponds to an ultraviolet spectrum of a UV-C/B/A broadband with a continuously variable wavelength of 220nm-390 nm.
The invention has the advantages that:
1. the gallium oxide-based heterojunction integrated photoelectric chip with specific components can continuously adjust the wavelength, has wide ultraviolet wavelength range, high integration level, sensitive reaction, small dark current, high light responsivity and small volume, has the characteristics of recoverability in repeated tests and the like, and has great application prospect.
2. The chip and the UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength manufactured by the invention have stable performance, rapid detection, high sensitivity and good accuracy, can directly and intelligently identify the wavelength range of ultraviolet rays, and can monitor the intensity of a certain specific ultraviolet wavelength.
3. The heterojunction with specific doping concentration and shape is combined into the composite film, so that the wavelength range among the heterojunctions can be effectively improved, and the performance of the heterojunction is improved.
4. The method has strong controllability and good repeatability, and can effectively obtain the chips with good uniformity, high quality and good performance by adopting specific heating steps, deposition time and the like.
5. The UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength, which is manufactured by the method, can remotely send information such as ultraviolet intensity, irradiation time, irradiation measurement and the like to be monitored to an Internet of things terminal to realize remote supervision, and can be applied to the fields of medical ultraviolet sterilization and disinfection remote supervision, electric fire alarm, high-voltage wire corona monitoring, ultraviolet curing and the like.
Drawings
Fig. 1 is a top view of a gallium oxide-based heterojunction integrated photovoltaic chip designed by the method of the present invention.
Fig. 2 is a side view of a gallium oxide based heterojunction integrated photonics chip designed using the method of the present invention.
FIG. 3 is a circuit diagram of a UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength designed by the method of the present invention.
FIG. 4 is a graph showing the results of a UV-C/B/A remote UV array monitor with continuously tunable wavelength made by the method of the present invention under low pressure UV lamp irradiation.
FIG. 5 shows the gallium oxide heterojunction photoelectric chip fabricated by the method of the present invention with a light intensity of 1mW/cm under a bias voltage of 2V2I-t curve measured by switching the light source on and off under 254nm ultraviolet light.
FIG. 6 is a graph showing the results of a UV-C/B/A remote UV array monitor with continuously tunable wavelength made by the method of the present invention under irradiation of a medium pressure UV lamp.
The 1-gallium oxide based heterojunction integrated photoelectric chip comprises 2, 5, 6-RC (remote control) filtering, 3-IV (current-to-current) conversion, 4-differential common-mode signal removal, 7-16 bit analog-to-digital conversion, 8-noise reduction and pull-up, 9-level conversion, signal isolation, 10-12C communication, 11-resistor, capacitor, voltage stabilization, decoupling, noise reduction and filtering.
Detailed Description
The invention is further illustrated below with reference to examples.
Example 1
As shown in FIG. 1-2, a wide-range gallium oxide-based heterojunction integrated photoelectric chip comprises a sapphire single crystal substrate 100 and Sn: beta-Ga arranged in sequence2O3A circular film 200 and a composite film 300; wherein the composite film 300 comprises La arranged in a circle on the same plane2O3Film 310, ZnO film 320, NiO film 330, Tb2O3Film 340, Ta2O5Film 350, Sm2O3Film 360, Nd2O3 Film 370 and Zn-. beta. -Ga2O3Film 380 is formed of Sn beta-Ga 2O3A composite film comprising a plurality of films combined on the circular film 200 can be formed to form La2O3/Sn:β-Ga2O3、ZnO/Sn:β-Ga2O3、NiO/Sn:β-Ga2O3、Tb2O3/Sn:β-Ga2O3、Ta2O5/Sn:β-Ga2O3、Sm2O3/Sn:β-Ga2O3、Nd2O3/Sn:β-Ga2O3And Zn beta-Ga2O3/Sn:β-Ga2O3A heterojunction structure of ZnO, NiO, Tb2O3、Ta2O5、Sm2O3、Nd2O3、Zn:β-Ga2O3And La2O3The array detection chip has the characteristics that the forbidden band widths are respectively 3.2eV, 3.5eV, 3.8eV, 4.0eV, 4.4eV, 4.7eV, 4.9eV and 5.5eV, and the ultraviolet absorption cut-off wavelengths are 387nm, 354nm, 326nm, 310nm, 281nm, 264nm, 254nm and 226nm, and the ultraviolet wavelength of the array detection chip is continuously adjustable, so that the array detection chip can be used for accurately measuring ultraviolet light or accurately measuring ultraviolet light of a plurality of wave bands simultaneously. Further, the ultraviolet wavelength range can be expanded, and the wide application is facilitated. And adopts a composite film comprising a plurality of circular films which are positioned on the same planeThe thin film can ensure that each heterojunction of the composite thin film can work normally, and meanwhile, the integration level can be improved, and the volume is reduced. Further comprising an upper Ti/Au thin film electrode 410 and a lower Ti/Au thin film electrode 420 corresponding to each other, wherein the upper Ti/Au thin film electrode 410 is formed on the composite thin film 300 and is respectively connected with the La2O3Film 310, ZnO film 320, NiO film 330, Tb2O3Film 340, Ta2O5Film 350, Sm2O3Film 360, Nd2O3 Film 370 and Zn-. beta. -Ga2O3The thin films 380 correspond to each other one by one, and the lower Ti/Au thin film electrode 420 is positioned at the position of Sn: beta-Ga 2O3A circular membrane 200. This allows to connect each heterojunction. Further, the Sn is beta-Ga2O3The thickness of the circular thin film 200 is 300-500nm, and the doping concentration of Sn is 3-5 at%. The La2O3 Film 310, ZnO film 320, NiO film 330, Tb2O3Film 340, Ta2O5 Film 350, Sm2O3 Film 360, Nd2O3 Film 370 and Zn-. beta. -Ga2O3The thickness of the thin film 380 is 200-300nm, and the doping concentration of Zn is 3-5 at%. By adopting the thickness and the doping concentration, the required forbidden bandwidth can be effectively obtained, and the performance of the chip obtained by utilizing the balance of ultraviolet wavelengths is better than that of other doping concentrations. The Sn is beta-Ga2O3The circular thin film 200 has the same area as the sapphire single crystal substrate 100, and the composite thin film 300 has an area of Sn: beta-Ga2O34/9 for circular membrane area 200. Therefore, the work of each heterojunction can be effectively ensured, the size of the chip can be reduced, and the miniaturization is utilized. The La2O3Film 310, ZnO film 320, NiO film 330, Tb2O3Film 340, Ta2O5Film 350, Sm2O3Film 360, Nd2O3Film 370 and Zn-. beta. -Ga2O3The thin film 380 is a fan-shaped or trapezoid structure, so that the area of each thin film can be ensured as much as possible in a limited space, the space is effectively utilized, and the normal operation of the heterojunction is ensured And (7) working. The upper Ti/Au thin film electrode 410 is a triangular annular thin film electrode, and is shaped as an annular isosceles triangle with a bottom edge of 2mm and a height of 4mm, so as to be opposite to each thin film of the composite thin film 300, and improve the contact area; the lower Ti/Au thin-film electrode 420 is circular, the thickness of the circular Ti thin-film electrode with the radius of 1mm is 30-40nm, and the thickness of the Au thin-film electrode is 90-120nm above the Ti thin-film electrode.
A wavelength continuously adjustable UV-C/B/A remote ultraviolet array monitor comprises a gallium oxide base heterojunction integrated photoelectric chip, an ultraviolet photoelectric detection peripheral circuit, a signal processing module, an IOT communication module, an AMR core control module and a data storage chip.
Compared with the traditional single heterojunction, the heterojunction has the characteristics of high integration level, wide ultraviolet wavelength range, small volume, recoverability of repeated tests and the like, has great application prospect, and is relatively undoped beta-Ga2O3The performance is better, the stability is high, the response is sensitive, and the dark current is small. The chip and the UV-C/B/A remote ultraviolet array monitor with the continuously adjustable wavelength manufactured by the invention have stable performance, can directly and intelligently identify the wavelength range of ultraviolet rays, and can monitor the intensity of a certain specific ultraviolet wavelength. The heterojunction with specific doping concentration and shape is combined into the composite film, so that the wavelength range among the heterojunctions can be effectively improved, and the performance of the heterojunction is improved. The method has strong controllability and good repeatability, and can effectively obtain the chips with good uniformity, high quality and good performance by adopting specific heating steps, deposition time and the like.
Example 2
The manufacturing method of the UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength comprises the following steps:
(1) preparing a gallium oxide-based heterojunction integrated photoelectric chip:
placing a c-plane sapphire circular single crystal substrate in V (H) (HF)2O2) Soaking in a solution of 5 to remove a natural oxide layer, then respectively ultrasonically cleaning with acetone, ethanol and deionized water, and vacuum-drying; ga of 99.99% purity2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The target materials are respectively placed at the position of a target table of a multi-target laser pulse deposition system at Ga2O3Placing an Sn metal ring around the target glow ring, fixing the processed c-plane sapphire circular single crystal substrate on a sample support, and putting the sample support into a vacuum cavity, wherein the distance between each target and the c-plane sapphire circular single crystal substrate is 5 cm; vacuumizing the cavity, introducing argon, adjusting the pressure in the vacuum cavity, heating the sapphire single crystal substrate, and growing Sn-doped Ga2O3Film of Sn, beta-Ga2O3After the film grows, Ga is put into the manipulator2O3The Sn metal ring above the target is replaced by a Zn metal ring, a hollow fan-shaped mask is inserted below the sample table, and Zn-doped beta-Ga continues to grow2O3Film of Zn, beta-Ga2O3After the film grows, rotating the hollow fan-shaped mask plate to form a fan-shaped film conveniently and avoid interference on other positions, introducing oxygen with the flow ratio of argon to oxygen being 3:1, and growing La sequentially 2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3A film, wherein the pressure of the evacuated chamber is 1 × 10-4Pa, the pressure of the cavity is 1Pa when the c-plane sapphire circular single crystal substrate is heated, the pressure of the cavity after oxygen is introduced is 5Pa, and the laser energy is 200mJ/cm2The pulse frequency of the laser is 1Hz, the wavelength of the laser is 248nm, the heating temperature of the c-plane sapphire circular single crystal substrate before oxygen is introduced is 600 ℃, the heating temperature of the c-plane sapphire circular single crystal substrate after the oxygen is introduced is 500 ℃, and due to the temperature parameters and the reason of the gas introduction, the smooth process of doping is ensured, and the formed Sn, beta-Ga and the like are reduced2O3Thin film and Zn doped beta-Ga2O3Influence of the film Sn beta-Ga2O3The deposition time of the film is 1.5 h; because of different materials and inconsistent film growth rate, the Zn, beta-Ga and the like are set to keep the thickness of the epitaxial film at 200-300nm2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The deposition time of the film is 1h, 2h, 0.5h, 2h and 1.5h respectively. After all the films are grown, in-situ annealing is carried out in the cavity for 0.5h at the annealing temperature of 650 ℃, and finally the gallium oxide-based heterojunction integrated photoelectric chip is obtained, wherein the fan-shaped film is positioned in the position of Sn, beta-Ga2O3The upper part of the film is round, and Sn is beta-Ga2O3The membrane leaks out of a certain annular area for the formation of the electrodes, as shown in figures 1 and 2.
(2) Manufacturing an electrode:
using a mask plate and adopting a radio frequency magnetron sputtering technology to form La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3、Nd2O3、Zn:β-Ga2O3Sector film and Sn: -beta-Ga2O3A layer of Ti/Au triangular ring and a layer of round film are respectively deposited above the round film to be used as measuring electrodes so as to be opposite to each film of the composite film, the contact area is increased, and the firmness and the conductivity are further improved; designing an ultraviolet photoelectric detection peripheral circuit, and connecting a gallium oxide-based heterojunction integrated photoelectric chip with an electrode, a signal processing module, a communication module, an AMR core control module and a data storage chip into a photoelectric detection circuit (as shown in figure 3), wherein detection signals of the integrated photoelectric chip are processed by the signal processing module and controlled by the AMR core control module, data are stored in the data storage chip, signal transmission is carried out through the communication module, and the ultraviolet-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength is assembled.
And (2) carrying out photoelectric performance measurement on the gallium oxide-based heterojunction integrated photoelectric chip obtained in the step (1). FIG. 4 is a graph showing the test results of the UV-C/B/A remote UV array monitor with continuously adjustable wavelength under the irradiation of a low-pressure UV lamp. As can be seen from the figure, the ultraviolet spectrum emitted by the low-pressure ultraviolet lamp is mainly distributed at 220-280nm, the peak value is about 254nm, the corresponding light responsivity is 0.05A/W, and the wavelength ultraviolet is mainly used for sterilization and disinfection The field of the technology. Researches show that only ultraviolet rays with the wavelength of 200-270nm can destroy the molecular structure of DNA (deoxyribonucleic acid) or RNA (ribonucleic acid) in cells of a microorganism organism to achieve the aims of sterilization and disinfection. According to the findings of the board research team of the institute for preventing and controlling viral diseases in the center of preventing and controlling Chinese diseases, the strength is more than 90 muW/cm2The UVC irradiates the coronavirus, and the SARS virus can be killed within 30 minutes. The ultraviolet irradiation dose (ultraviolet intensity x irradiation time) plays a crucial role in the sterilization process. The UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength is applied to the field of ultraviolet sterilization and disinfection, can directly judge whether the wavelength of ultraviolet is suitable for sterilization and disinfection, monitors the intensity, irradiation time and irradiation dose of ultraviolet in real time, and remotely transmits information to an Internet of things terminal to achieve the effect of health supervision.
The gallium oxide heterojunction photoelectric chip designed by the invention comprises Sn, beta-Ga2O3Circular film, La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3、Nd2O3And Zn beta-Ga2O3Fan-shaped film and forming La2O3/Sn:β-Ga2O3、ZnO/Sn:β-Ga2O3、NiO/Sn:β-Ga2O3、Tb2O3/Sn:β-Ga2O3、Ta2O5/Sn:β-Ga2O3、Sm2O3/Sn:β-Ga2O3、Nd2O3/Sn:β-Ga2O3And Zn beta-Ga2O3/Sn:β-Ga2O3A heterojunction structure of ZnO, NiO, Tb2O3、Ta2O5、Sm2O3、Nd2O3、Zn:β-Ga2O3And La2O3Having forbidden band widths of 3.2eV, 3.5eV, 3.8eV, 4.0eV, 4.4eV, 4.7eV, 4.9eV, and 5.5eV, respectively, corresponding to UV absorption cut-off wavelengths of 387nm, 354nm, 326nm, 310nm, 281nm, 264nm, 254nm, and 226nm, and detecting the core The sheet has the characteristic of continuously adjustable UV-C/B/A ultraviolet wavelength.
With Zn beta-Ga2O3/Sn:β-Ga2O3FIG. 5 shows an example of a heterojunction, in which the light intensity of a gallium oxide heterojunction photoelectric chip is 1mW/cm under a bias voltage of 2V2The test result shows that the test result shows good repeatability after 5I-t cycles are repeatedly tested by an I-t curve graph measured by continuously switching on and off a light source under the irradiation of 254nm ultraviolet light. The maximum photocurrent after the open light source is 135 muA, the photocurrent after the light source is turned off is 2.5 muA, the light-dark ratio reaches 54, and the light response time is 0.1s, which shows that the detector has excellent light response characteristics to 254nm ultraviolet light. The doping of Zn and Sn greatly improves the carrier concentration of the gallium oxide semiconductor, increases the photocurrent and light-dark ratio of the detector, and Zn, beta-Ga2O3With Sn beta-Ga2O3The formed heterojunction also shortens the optical response time and improves the response speed of the detector. FIG. 6 is a graph showing the results of a UV-C/B/A remote UV array monitor with continuously tunable wavelength made by the method of the present invention under irradiation of a medium pressure UV lamp. As can be seen from the figure, the ultraviolet spectrum emitted by the medium-pressure ultraviolet lamp is mainly distributed at 390nm, the peak value is about 350nm, the corresponding light responsivity is 0.123A/W, and the wavelength ultraviolet is mainly used in the ultraviolet curing field. The ultraviolet curing technology has wide application in the fields of semiconductor chips, integrated circuits and new resin materials, and the ultraviolet wave band, the irradiation intensity and the irradiation time of the ultraviolet curing technology are closely related to the quality and the performance of products. The UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength can directly judge whether the wavelength of ultraviolet is not beneficial to photocuring, measure and collect the intensity and irradiation time of specific ultraviolet in real time, and realize remote alarm once the ultraviolet intensity is attenuated, thereby ensuring the product quality and reducing the material loss.
The schematic diagram of the ultraviolet photoelectric detection peripheral circuit designed by the invention is shown in fig. 3, and specifically comprises a gallium oxide-based heterojunction integrated photoelectric chip 1, RC filters 2, 5 and 6, an IV conversion 3, a differential common-mode signal removal 4, a 16-bit analog-to-digital conversion 7, a noise reduction pull-up 8, a level conversion and signal isolation 9, an I2C communication 10, a resistor, a capacitor, a voltage stabilization, a decoupling, a noise reduction and a filtering 11. The gallium oxide-based heterojunction integrated photoelectric chip 1 is connected with an RC filter 2 and an IV converter 3, the IV converter 3 is connected with a differential common-mode removing signal 4, the differential common-mode removing signal 4 is connected with an RC filter 5, the RC filter 5 is connected with an RC filter 6, the RC filter 6 is connected with a 16-bit analog-to-digital converter 7, the 16-bit analog-to-digital converter 7 is connected with a level converter and a signal isolator 9, and the level converter and the signal isolator 9 are connected with an I2C communication 10.
The specific working principle of the circuit is as follows:
(1) setting bias voltage: due to the operational amplifier characteristic, the photodetector VD1 is biased at a voltage equal to the non-inverting input voltage Vref of the operational amplifier U4A. The voltage output by the microprocessor DAC _ OUT2 can freely set the voltage Vref of the non-inverting input terminal of the operational amplifier U4A, that is, the bias voltage of the photoelectric detection sensor VD1 can be freely set according to the bias voltage and photoelectric characteristics of the photoelectric detector VD1 (namely, the gallium oxide-based heterojunction integrated photoelectric chip 1), so as to achieve the optimal test performance.
(2) IV conversion 3: the operational amplifier LMC6032 selected has an ultra-low input bias current (maximum 40fA), when the photo-detector VD1 is illuminated by ultraviolet light, the photo-detector produces a photocurrent I, which is in the order of nA, while the operational amplifier input bias current in the order of fA is completely negligible with respect to the photocurrent in the order of nA, i.e. a resistor R9 is considered to be completely passed by the photocurrent. Therefore, after IV conversion, the output voltage of U4A is:
V1＝I*R9+Vref
(3) differential common-mode signal removal 4: and connecting the IV-converted voltage V1 and the detector bias voltage Vref into a subtraction circuit to obtain an OPA _ OUT voltage as follows:
V＝V1–Vref
＝I*R9
at this time, the output voltage signal V is in a direct proportion relation with the photo current I, and the photo current is in a linear relation with the light intensity, so that the OPA _ OUT voltage is known to be in a linear relation with the illumination intensity, and the output OPA _ OUT voltage is converted to high-precision analog-to-digital conversion through the RC filters 5 and 6.
(4) High-precision analog-to-digital conversion: as shown in fig. 3, the OPA _ OUT voltage signal is connected to a 16-bit analog-to-digital conversion chip ADS1100 for 16-bit analog-to-digital conversion 7, and the conversion result is transmitted to a processor through I2C communication, and the signal is filtered, calculated, etc. by the processor, and finally converted into the illumination intensity and output.
Example 3
Step (2) is the same as in example 2. In the step (1), the c-plane sapphire circular single crystal substrate is put into V (HF) (H)2O2) Soaking in a solution of 5 to remove a natural oxide layer, then respectively ultrasonically cleaning with acetone, ethanol and deionized water, and vacuum-drying; ga of 99.99% purity2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The target materials are respectively placed at the position of a target table of a multi-target laser pulse deposition system at Ga2O3Placing an Sn metal ring around the target glow ring, fixing the processed c-plane sapphire circular single crystal substrate on a sample support, and putting the sample support into a vacuum cavity, wherein the distance between each target and the c-plane sapphire circular single crystal substrate is 5 cm; vacuumizing the cavity, introducing argon, adjusting the pressure in the vacuum cavity, heating the sapphire single crystal substrate, and growing Sn-doped Ga2O3Film of Sn, beta-Ga2O3After the film grows, Ga is put into the manipulator2O3The Sn metal ring above the target is replaced by a Zn metal ring, a hollow fan-shaped mask is inserted below the sample table, and Zn-doped beta-Ga continues to grow2O3Film of Zn, beta-Ga2O3After the film growth is finished, rotating the hollow fan-shaped mask plate, introducing oxygen with the flow ratio of argon to oxygen being 3:1, and growing La sequentially2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3A film, wherein the pressure of the evacuated chamber is 1 × 10 -4Pa, when the c-plane sapphire circular single crystal substrate is heated, the pressure of the cavity is 1Pa, the pressure of the cavity after oxygen is introduced is 10Pa, and the laser energy is 200mJ/cm2The laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of the c-plane sapphire circular single crystal substrate before oxygen introduction is 700 ℃, and the heating of the c-plane sapphire circular single crystal substrate after oxygen introduction is carried outThe temperature is 600 ℃, Sn is beta-Ga2O3The deposition time of the film is 2 h; because of different materials and inconsistent film growth rate, the Zn, beta-Ga and the like are set to keep the thickness of the epitaxial film at 200-300nm2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The deposition time of the film is 1h, 2h, 1h, 0.5h, 2h and 2h respectively. After all the films are grown, in-situ annealing is carried out in the cavity for 0.5h at the annealing temperature of 650 ℃, and finally the gallium oxide-based heterojunction integrated photoelectric chip is obtained, as shown in figures 1 and 2.
The test results of the obtained gallium oxide-based heterojunction integrated photoelectric chip are similar to those of example 2.
Example 4
Step (2) is the same as in example 2. In the step (1), the c-plane sapphire circular single crystal substrate is put into V (HF) (H)2O2) Soaking in a solution of 5 to remove a natural oxide layer, then respectively ultrasonically cleaning with acetone, ethanol and deionized water, and vacuum-drying; ga of 99.99% purity 2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The target materials are respectively placed at the position of a target platform of a multi-target laser pulse deposition system and are arranged in Ga2O3Placing an Sn metal ring around the target glow ring, fixing the processed c-plane sapphire circular single crystal substrate on a sample support, and putting the sample support into a vacuum cavity, wherein the distance between each target and the c-plane sapphire circular single crystal substrate is 5 cm; vacuumizing the cavity, introducing argon, adjusting the pressure in the vacuum cavity, heating the sapphire single crystal substrate, and growing Sn-doped Ga2O3Film of Sn, beta-Ga2O3After the film grows, Ga is put into the manipulator2O3The Sn metal ring above the target is replaced by a Zn metal ring, a hollow fan-shaped mask is inserted below the sample table, and Zn-doped beta-Ga continues to grow2O3Film of Zn, beta-Ga2O3After the film growth is finished, rotatingTurning a hollow fan-shaped mask plate, introducing oxygen with the flow ratio of argon to oxygen being 3:1, and growing La sequentially2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3A film, wherein the pressure of the evacuated chamber is 1 × 10-4Pa, the pressure of the cavity is 2Pa when the c-plane sapphire circular single crystal substrate is heated, the pressure of the cavity after oxygen is introduced is 8Pa, and the laser energy is 200mJ/cm2The laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of the c-plane sapphire circular single crystal substrate before oxygen introduction is 700 ℃, the heating temperature of the c-plane sapphire circular single crystal substrate after oxygen introduction is 550 ℃, and the Sn is beta-Ga 2O3The deposition time of the film is 2 h; because of different materials and inconsistent film growth rate, the Zn, beta-Ga and the like are set to keep the thickness of the epitaxial film at 200-300nm2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The deposition time of the film is 1.5h, 2h, 1h, 2h and 1.5h respectively. After all the films are grown, annealing is carried out in situ in the cavity for 1h, the annealing temperature is 650 ℃, and finally the gallium oxide-based heterojunction integrated photoelectric chip is obtained, as shown in figures 1 and 2.
The test results of the obtained gallium oxide-based heterojunction integrated photoelectric chip are similar to those of example 2.
Example 5
Step (2) is the same as in example 2. In the step (1), the c-plane sapphire circular single crystal substrate is put into V (HF) (H)2O2) Soaking in a solution of 5 to remove a natural oxide layer, then respectively ultrasonically cleaning with acetone, ethanol and deionized water, and vacuum-drying; ga of 99.99% purity2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The target materials are respectively placed at the position of a target table of a multi-target laser pulse deposition system at Ga2O3A S is arranged around the glow ring of the target materialThe n metal ring fixes the processed c-plane sapphire circular single crystal substrate on a sample holder, and the processed c-plane sapphire circular single crystal substrate is placed into a vacuum chamber, wherein the distance between each target and the c-plane sapphire circular single crystal substrate is 5 cm; vacuumizing the cavity, introducing argon, adjusting the pressure in the vacuum cavity, heating the sapphire single crystal substrate, and growing Sn-doped Ga 2O3Film of Sn beta-Ga2O3After the film growth is finished, Ga is put into the manipulator2O3The Sn metal ring above the target material is replaced by a Zn metal ring, a hollow fan-shaped mask is inserted below the sample platform, and Zn-doped beta-Ga is continuously grown2O3Film of Zn beta-Ga2O3After the film growth is finished, rotating the hollow fan-shaped mask plate, introducing oxygen with the flow ratio of argon to oxygen being 3:1, and sequentially growing La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3A film, wherein the pressure of the evacuated chamber is 1 × 10-4Pa, when the c-plane sapphire circular single crystal substrate is heated, the pressure of the cavity is 2Pa, the pressure of the cavity after oxygen is introduced is 6Pa, and the laser energy is 200mJ/cm2The laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of the c-plane sapphire circular single crystal substrate before oxygen introduction is 600 ℃, the heating temperature of the c-plane sapphire circular single crystal substrate after oxygen introduction is 550 ℃, and the Sn is beta-Ga2O3The deposition time of the film is 2 hours; because of different materials and inconsistent film growth rate, the Zn, beta-Ga and the like are set to keep the thickness of the epitaxial film at 200-300nm2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The deposition time of the film is 2h, 4h, 1h, 2h, 3h and 1.5h respectively. After all the films are grown, in-situ annealing is carried out in the cavity for 0.5h at the annealing temperature of 650 ℃, and finally the gallium oxide-based heterojunction integrated photoelectric chip is obtained, as shown in figures 1 and 2.
The test results of the obtained gallium oxide-based heterojunction integrated photoelectric chip are similar to those of example 2.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Any modification, equivalent replacement or improvement made by those skilled in the art based on the above description and within the principle of the method and the present invention shall be included in the protection scope of the present invention. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A gallium oxide-based heterojunction integrated photoelectric chip is characterized in that: comprises a sapphire single crystal substrate and Sn beta-Ga arranged in sequence2O3Circular films and composite films; wherein the composite film comprises La which is positioned on the same plane and is arranged into a circle2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3A film; the composite film is characterized by further comprising an upper Ti/Au film electrode and a lower Ti/Au film electrode which are in one-to-one correspondence, wherein the upper Ti/Au film electrode is formed on the composite film and is respectively connected with the La 2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The films correspond one to one, and the lower Ti/Au film electrode is positioned at Sn: beta-Ga2O3Round film.
2. The gallium oxide-based heterojunction integrated photoelectric chip according to claim 1, wherein: the Sn is beta-Ga2O3The thickness of the circular film is 300-500nm, and the doping concentration of Sn is 3-5 at%.
3. The gallium oxide-based heterojunction integrated photoelectric chip according to claim 1, wherein: the La2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga2O3The thickness of the film is 200-300nm, and the doping concentration of Zn is 3-5 at%.
4. The gallium oxide-based heterojunction integrated photoelectric chip according to claim 1, wherein: the Sn is beta-Ga2O3The area of the circular film is the same as that of the sapphire single crystal substrate, and the area of the composite film is Sn: beta-Ga2O34/9 for circular membrane area.
5. The gallium oxide-based heterojunction integrated photoelectric chip according to claim 1, wherein: the La2O3Film, ZnO film, NiO film, Tb2O3Film, Ta2O5Film Sm2O3Film, Nd2O3Film and Zn beta-Ga 2O3The film is in a fan-shaped structure.
6. The gallium oxide-based heterojunction integrated photovoltaic chip according to claim 5, wherein: the upper Ti/Au thin film electrode is a triangular annular thin film electrode and is in the shape of an annular isosceles triangle with a bottom edge of 2mm and a height of 4 mm; the lower Ti/Au thin film electrode is circular, and the shape of the lower Ti/Au thin film electrode is circular with the radius of 1 mm; the thickness of a Ti film electrode in the Ti/Au film electrode is 30-40nm, and the thickness of an Au film electrode above the Ti film electrode is 90-120 nm.
7. A wavelength continuously tunable UV-C/B/a remote UV array monitor comprising a gallium oxide based heterojunction integrated optoelectronic chip of any of claims 1-6; the device also comprises an ultraviolet photoelectric detection peripheral circuit, a signal processing module, an IOT communication module, an AMR core control module and a data storage chip.
8. The UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength as claimed in claim 7, wherein: the remote ultraviolet array monitor can remotely send monitoring information to the Internet of things terminal to realize remote supervision.
9. A method of making a UV-C/B/a remote UV array monitor of any of claims 7-8 having a continuously tunable wavelength, comprising the steps of:
(1) Preparing a gallium oxide-based heterojunction integrated photoelectric chip:
placing a c-plane sapphire circular single crystal substrate into HF and H2O2Soaking in a solution with the volume ratio of 1:5 to remove a natural oxidation layer, then respectively ultrasonically cleaning with acetone, ethanol and deionized water, and carrying out vacuum drying; ga of 99.99% purity2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The target materials are respectively placed at the position of a target table of a multi-target laser pulse deposition system at Ga2O3Placing an Sn metal ring around the target glow ring, fixing the processed c-plane sapphire circular single crystal substrate on a sample holder, and putting the sample holder into a vacuum chamber, wherein the distance between each target and the c-plane sapphire circular single crystal substrate is 5 cm; vacuumizing the cavity, introducing argon, adjusting the pressure in the vacuum cavity, heating the sapphire single crystal substrate, and growing Sn-doped Ga2O3Film of Sn, beta-Ga2O3After the film grows, Ga is put into the manipulator2O3The Sn metal ring above the target is replaced by a Zn metal ring, a hollow fan-shaped mask is inserted below the sample table, and Zn-doped beta-Ga continues to grow2O3Film of Zn, beta-Ga2O3After the film growth is finished, rotating the hollow fan-shaped mask plate, introducing oxygen, wherein the flow ratio of argon to oxygen is 3:1, and growing La sequentially2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3A film, wherein the pressure of the evacuated chamber is 1 ×10-4Pa, the pressure of the cavity is 1-2Pa when the c-plane sapphire circular single crystal substrate is heated, the pressure of the cavity after oxygen is introduced is 5-10Pa, and the laser energy is 200mJ/cm2The laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of the c-plane sapphire circular single crystal substrate before oxygen introduction is 600-fold-700 ℃, the heating temperature of the c-plane sapphire circular single crystal substrate after oxygen introduction is 500-fold-600 ℃, and the Sn: beta-Ga2O3The deposition time of the film is 1.5-3 h; because of different materials and inconsistent film growth rate, Zn, beta-Ga and the like are set to keep the thickness of the epitaxial film at 200-300nm2O3、La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3And Nd2O3The deposition time of the film is 1-2h, 2-4h, 0.5-1h, 2-3h, 2-4h and 1.5-2h respectively; after all the films are grown, in-situ annealing is carried out in the cavity for 0.5 to 1.0 hour, and the annealing temperature is 650 ℃;
(2) and (3) manufacturing an electrode:
using a mask plate and adopting a radio frequency magnetron sputtering technology to form La2O3、ZnO、NiO、Tb2O3、Ta2O5、Sm2O3、Nd2O3And Zn beta-Ga2O3A Ti/Au triangular annular film is respectively deposited on the fan-shaped film, and the Ti/Au triangular annular film is formed on the Sn, beta-Ga2O3Depositing a Ti/Au circular film on the circular film, wherein the Ti/Au triangular annular film corresponds to the Ti/Au circular film one by one;
(3) assembling:
an ultraviolet photoelectric detection peripheral circuit is designed, and a gallium oxide-based heterojunction integrated photoelectric chip with an electrode, a signal processing module, an IOT communication module, an AMR core control module and a data storage chip are connected into a photoelectric detection circuit to assemble the UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength.
10. The method for preparing a UV-C/B/A remote ultraviolet array monitor with continuously adjustable wavelength as claimed in claim 9, wherein: the gallium oxide-based heterojunction integrated photoelectric chip is composed of a heterojunction film formed by a semiconductor with the forbidden band width of 5.5-3.2eV change and gallium oxide, and corresponds to an ultraviolet spectrum of a UV-C/B/A broadband with the wavelength of 220nm-390nm being continuously variable.
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