CN112005374A - 阵列基板及其制造方法、显示装置及其制造方法 - Google Patents
阵列基板及其制造方法、显示装置及其制造方法 Download PDFInfo
- Publication number
- CN112005374A CN112005374A CN201980000387.1A CN201980000387A CN112005374A CN 112005374 A CN112005374 A CN 112005374A CN 201980000387 A CN201980000387 A CN 201980000387A CN 112005374 A CN112005374 A CN 112005374A
- Authority
- CN
- China
- Prior art keywords
- substrate
- thin film
- film transistor
- switching
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 358
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 70
- 230000008569 process Effects 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 45
- 238000012546 transfer Methods 0.000 claims description 28
- 238000000059 patterning Methods 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 28
- 238000010586 diagram Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
提供了一种阵列基板及其制造方法、显示装置及其制造方法,属于显示技术领域。阵列基板包括:转接基板,位于转接基板一侧的薄膜晶体管,以及内嵌于转接基板另一侧的绑定连接线,绑定连接线用于连接驱动电路;转接基板上设置有转接过孔,转接过孔内设置有导电结构,薄膜晶体管通过导电结构与绑定连接线电连接。本公开提高了阵列基板的制备良率,降低了工艺难度。
Description
PCT国内申请,说明书已公开。
Claims (18)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/079644 WO2020191607A1 (zh) | 2019-03-26 | 2019-03-26 | 阵列基板及其制造方法、显示装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112005374A true CN112005374A (zh) | 2020-11-27 |
CN112005374B CN112005374B (zh) | 2024-06-18 |
Family
ID=72608740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980000387.1A Active CN112005374B (zh) | 2019-03-26 | 2019-03-26 | 阵列基板及其制造方法、显示装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11502153B2 (zh) |
CN (1) | CN112005374B (zh) |
WO (1) | WO2020191607A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11558184B2 (en) | 2020-08-09 | 2023-01-17 | Perimeter 81 Ltd | Unification of data flows over network links with different internet protocol (IP) addresses |
CN112242414A (zh) * | 2020-10-12 | 2021-01-19 | 华南理工大学 | 一种柔性显示屏及其制备方法、柔性显示装置 |
CN114664745B (zh) * | 2022-05-24 | 2023-01-17 | 惠科股份有限公司 | 显示面板及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1582461A (zh) * | 2001-09-07 | 2005-02-16 | 松下电器产业株式会社 | 显示装置及其制造方法 |
CN107256870A (zh) * | 2017-06-09 | 2017-10-17 | 京东方科技集团股份有限公司 | 一种阵列基板及制作方法、柔性显示面板、显示装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
TW474023B (en) * | 2001-02-27 | 2002-01-21 | Hannstar Display Corp | Thin film transistor process of liquid crystal display |
US6814832B2 (en) * | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
JP2003255850A (ja) * | 2002-03-05 | 2003-09-10 | Pioneer Electronic Corp | 表示パネル基板及び表示装置 |
JP2010243525A (ja) * | 2009-04-01 | 2010-10-28 | Sony Corp | 液晶表示パネル及びその製造方法 |
KR102174336B1 (ko) * | 2014-07-08 | 2020-11-04 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US9478583B2 (en) * | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
CN105552085B (zh) * | 2015-12-25 | 2019-04-30 | 昆山国显光电有限公司 | 一种像素驱动电路及其制备方法 |
CN107302011B (zh) * | 2016-04-14 | 2020-11-20 | 群创光电股份有限公司 | 显示装置 |
CN106384740A (zh) | 2016-09-20 | 2017-02-08 | 昆山工研院新型平板显示技术中心有限公司 | 无边框显示装置及其制备方法 |
-
2019
- 2019-03-26 US US16/761,823 patent/US11502153B2/en active Active
- 2019-03-26 CN CN201980000387.1A patent/CN112005374B/zh active Active
- 2019-03-26 WO PCT/CN2019/079644 patent/WO2020191607A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1582461A (zh) * | 2001-09-07 | 2005-02-16 | 松下电器产业株式会社 | 显示装置及其制造方法 |
CN107256870A (zh) * | 2017-06-09 | 2017-10-17 | 京东方科技集团股份有限公司 | 一种阵列基板及制作方法、柔性显示面板、显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20210217837A1 (en) | 2021-07-15 |
WO2020191607A1 (zh) | 2020-10-01 |
CN112005374B (zh) | 2024-06-18 |
US11502153B2 (en) | 2022-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102095215B1 (ko) | 전사부재 및 선택적 전사 기술을 이용한 액티브 매트릭스 rgb 수직형 마이크로led 디스플레이 | |
US9997501B2 (en) | Micro-transfer-printed light-emitting diode device | |
US10418331B2 (en) | Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance | |
CN105808005B (zh) | 柔性显示屏及其制造方法 | |
EP3425618B1 (en) | Assembly of semiconductor devices | |
US9049797B2 (en) | Electrically bonded arrays of transfer printed active components | |
CN112005374A (zh) | 阵列基板及其制造方法、显示装置及其制造方法 | |
CN112366220B (zh) | 一种显示基板及其制备方法、显示装置 | |
CN108962914B (zh) | 电子装置与其制造方法 | |
CN110707119A (zh) | 半导体材料基板、微型发光二极管面板及其制造方法 | |
CN112133729A (zh) | 一种显示基板及其制备方法、显示装置 | |
US20220302340A1 (en) | Micro light emitting diode panel | |
CN111128832B (zh) | 微元件转移装置及其制造方法 | |
US11929358B2 (en) | Display backplate and method for manufacturing same, display panel and method for manufacturing same, and display device | |
CN111128942B (zh) | 一种微发光二极管显示基板及其制备方法 | |
JP2021018415A (ja) | 表示装置及び表示装置の製造方法 | |
CN113632232A (zh) | 驱动背板及其制备方法、显示面板、显示装置 | |
CN113594197B (zh) | 微型发光二极管面板及其制造方法 | |
CN113035736A (zh) | 电子装置的制作方法 | |
CN114664745A (zh) | 显示面板及其制作方法 | |
US12057538B2 (en) | Driving substrate and method for manufacturing the same, light-emitting substrate and display device | |
US20230049038A1 (en) | Array substrate and manufacturing method thereof, and display device and manufacturing method thereof | |
CN101884111A (zh) | 控制基板及该控制基板的制造方法 | |
CN114464717B (zh) | 显示装置 | |
US20220077223A1 (en) | Processes, articles and apparatus that incorporate semiconductor switches and drive circuitry on compound semiconductor chiplets |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |