CN111987174B - 基于锗纳米片的工作电极及其制备方法和生物光电探测器 - Google Patents
基于锗纳米片的工作电极及其制备方法和生物光电探测器 Download PDFInfo
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- CN111987174B CN111987174B CN202010906493.0A CN202010906493A CN111987174B CN 111987174 B CN111987174 B CN 111987174B CN 202010906493 A CN202010906493 A CN 202010906493A CN 111987174 B CN111987174 B CN 111987174B
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 114
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 114
- 239000002135 nanosheet Substances 0.000 title claims abstract description 107
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 48
- 239000003792 electrolyte Substances 0.000 claims description 26
- 238000002604 ultrasonography Methods 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000000523 sample Substances 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 9
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- 239000011521 glass Substances 0.000 claims description 9
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- 238000001035 drying Methods 0.000 claims description 8
- 238000001291 vacuum drying Methods 0.000 claims description 8
- 238000009210 therapy by ultrasound Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 11
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- 238000001514 detection method Methods 0.000 description 16
- 238000005119 centrifugation Methods 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
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- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
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- 239000002055 nanoplate Substances 0.000 description 3
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- 238000001069 Raman spectroscopy Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
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- 238000001548 drop coating Methods 0.000 description 1
- 238000000840 electrochemical analysis Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- CRJWFQWLUGZJMK-UHFFFAOYSA-N germanium;phosphane Chemical compound P.[Ge] CRJWFQWLUGZJMK-UHFFFAOYSA-N 0.000 description 1
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- 238000010079 rubber tapping Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012430 stability testing Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
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CN202010906493.0A CN111987174B (zh) | 2020-09-01 | 2020-09-01 | 基于锗纳米片的工作电极及其制备方法和生物光电探测器 |
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CN202010906493.0A CN111987174B (zh) | 2020-09-01 | 2020-09-01 | 基于锗纳米片的工作电极及其制备方法和生物光电探测器 |
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CN111987174A CN111987174A (zh) | 2020-11-24 |
CN111987174B true CN111987174B (zh) | 2022-09-13 |
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CN112577598A (zh) * | 2020-11-26 | 2021-03-30 | 深圳大学 | 基于铋烯纳米片的光电探测器及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1706577A (zh) * | 2005-04-28 | 2005-12-14 | 浙江大学 | 超声液相还原制备单分散锗纳米晶的方法 |
CN109439323A (zh) * | 2018-09-28 | 2019-03-08 | 深圳大学 | β-氧化亚铅量子点及其制备方法、光电探测器及其制备方法 |
WO2019149985A1 (es) * | 2018-02-02 | 2019-08-08 | Nanoinnova Technologies S.L. | Cristales de germanio alfa de pocas láminas, procedimientos para su preparación y usos de dichos cristales |
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2020
- 2020-09-01 CN CN202010906493.0A patent/CN111987174B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1706577A (zh) * | 2005-04-28 | 2005-12-14 | 浙江大学 | 超声液相还原制备单分散锗纳米晶的方法 |
WO2019149985A1 (es) * | 2018-02-02 | 2019-08-08 | Nanoinnova Technologies S.L. | Cristales de germanio alfa de pocas láminas, procedimientos para su preparación y usos de dichos cristales |
CN109439323A (zh) * | 2018-09-28 | 2019-03-08 | 深圳大学 | β-氧化亚铅量子点及其制备方法、光电探测器及其制备方法 |
Non-Patent Citations (1)
Title |
---|
Halide-Induced Self-Limited Growth of Ultrathin Nonlayered Ge Flakes for High-Performance Phototransistors;Xiaozong Hu et al;《J. Am. Chem. Soc.》;20180914;第140卷;正文第12909-12914页以及图1-4 * |
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Effective date of registration: 20201224 Address after: 518031 24F, block C, Neo Green Plaza, 6009 Shennan Avenue, Tian'an community, Shatou street, Futian District, Shenzhen City, Guangdong Province Applicant after: Shenzhen baigaohui Technology Development Co.,Ltd. Address before: D1001, Yinxing science and technology building, No. 1301, sightseeing Road, Xinlan community, Guanlan street, Longhua District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Hanguang Technology Co.,Ltd. |
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Effective date of registration: 20220817 Address after: 518042 24F, block C, Neo Green Plaza, No. 6009, Shennan Avenue, Tian'an community, Shatou street, Futian District, Shenzhen, Guangdong Applicant after: Shenzhen everything Sensor Technology Co.,Ltd. Address before: 518031 24F, block C, Neo Green Plaza, 6009 Shennan Avenue, Tian'an community, Shatou street, Futian District, Shenzhen City, Guangdong Province Applicant before: Shenzhen baigaohui Technology Development Co.,Ltd. |
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Effective date of registration: 20221011 Address after: D1001, Yinxing science and technology building, No. 1301, sightseeing Road, Xinlan community, Guanlan street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Hanguang Technology Co.,Ltd. Address before: 518042 24F, block C, Neo Green Plaza, No. 6009, Shennan Avenue, Tian'an community, Shatou street, Futian District, Shenzhen, Guangdong Patentee before: Shenzhen everything Sensor Technology Co.,Ltd. |
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