CN111948509A - Composite IGBT structure, simulation system based on composite IGBT structure and control method of simulation system - Google Patents
Composite IGBT structure, simulation system based on composite IGBT structure and control method of simulation system Download PDFInfo
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- CN111948509A CN111948509A CN202010839775.3A CN202010839775A CN111948509A CN 111948509 A CN111948509 A CN 111948509A CN 202010839775 A CN202010839775 A CN 202010839775A CN 111948509 A CN111948509 A CN 111948509A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
Abstract
The invention provides a simulation system based on a composite IGBT structure, which comprises: an inverter module having a composite IGBT structure; the microcontroller comprises a PWM module and a GPIO module; the inverter working mode display and control module comprises a display part and a control part; and the IGBT driving module is connected with the microcontroller and comprises a main IGBT driving part and an auxiliary IGBT driving part. The invention provides a control method of an analog system based on a composite IGBT structure, which comprises the following steps: the working state of the inverter module is changed through the inverter working mode display and control module, and the inverter working mode display and control module sends a corresponding control signal to the microcontroller; and the microcontroller controls the composite IGBT structure according to the control signal, so that the inverter module comprising the composite IGBT structure works in different states. The composite IGBT structure provided by the invention can simulate two different fault states of the inverter IGBT: an IGBT signal loss fault condition and an IGBT open fault condition.
Description
Technical Field
The invention relates to the technical field of inverter control strategies and diagnosis of IGBT modules in an inverter, in particular to a composite IGBT structure, a simulation system based on the composite IGBT structure and a control method of the simulation system.
Background
In the twenty-first century today, electric energy has become one of the most important energy sources at present, which profoundly affects and changes people's way of life and production. China, the first super large country of the global population, and the second largest economic entity worldwide, have a continuously increasing demand for electricity. In order to guarantee normal production and life of people and the stable and continuous development of society, higher requirements are put forward on electric power systems in China, and the stable and continuous operation of the electric power systems is of great importance.
An inverter is an essential and important part of an entire power system as a device for realizing electric energy conversion in the power system. Because the switching components in the inverter always work under high frequency and high voltage, the loss and the fault are difficult to avoid. Once the loss and the fault of the switching components cause immeasurable damage to the whole power system, even the whole system is broken down, and serious influence and economic loss are brought to life and production of people, so that the fault diagnosis of the switching electronic components in the inverter is particularly important.
However, in real life, since the inverter always operates under high voltage and high frequency conditions, it is difficult to simulate various faults of the switching devices in the circuit under real conditions for corresponding fault diagnosis. The IGBT is a common switching element in the inverter, has high failure rate and is a potential hidden trouble for stable operation of a system. The IGBT module used in the inverter is a modular semiconductor product in which IGBTs and freewheeling diodes are bridge-packaged by a specific circuit. The research on the fault diagnosis of the IGBT module has important significance for improving the stability of a power system, so that the fault of the IGBT module in the inverter is simulated in real life, and the significance for providing reliable and accurate data for the research is important.
Disclosure of Invention
The invention aims to provide a fault simulation system based on a composite IGBT structure, so as to solve the problem of how to simulate the faults of IGBT modules in an inverter.
In order to solve the technical problems, the technical scheme of the invention is as follows: the utility model provides a compound IGBT structure is formed by main IGBT module and supplementary IGBT module series connection: the emitter of the main IGBT module is connected with the emitter of the auxiliary IGBT module, the collector of the main IGBT module is used as an input port of the composite IGBT structure, the collector of the auxiliary IGBT module is used as an output port of the composite IGBT structure, the gate level of the main IGBT module and the gate level of the auxiliary IGBT module are both control ports of the composite IGBT structure, and the main IGBT module and the auxiliary IGBT module are symmetrically equivalent.
The invention also provides a simulation system based on the composite IGBT structure, which comprises: an inverter module having the composite IGBT structure; a microcontroller comprising a PWM module and a GPIO module, the PWM module providing control signals to a main IGBT module in the composite IGBT structure, the GPIO module providing control signals to an auxiliary IGBT in the composite IGBT structure; the inverter working mode display and control module comprises a display part and a control part, wherein the display part displays the working state of the inverter module in real time, the control part changes the working state of the inverter module, and the control part sends a control signal to be transmitted to the microcontroller; and the IGBT driving module is connected with the microcontroller, and comprises a main IGBT driving part and an auxiliary IGBT driving part, wherein the main IGBT driving part controls the main IGBT module in the composite IGBT structure, and the auxiliary IGBT driving part controls the auxiliary IGBT module in the composite IGBT structure.
Further, the simulation system based on the composite IGBT structure further includes: the power supply module of the weak current control system is respectively connected with the inverter working mode display and control module and the microcontroller, the direct current bus power supply module is connected with the inverter module, and the driving power supply module is connected with the IGBT driving module.
Furthermore, the microcontroller also comprises a communication module, and the microcontroller is connected with the inverter working mode display and control module through the communication module.
Further, the operating state includes: normal operating state, IGBT signal loss fault state and IGBT open circuit fault state.
Further, the main IGBT driving part conditions the weak current signal output by the PWM module of the microcontroller to a strong current control signal capable of driving the IGBT, and controls the main IGBT module in the composite IGBT structure.
Further, the auxiliary IGBT driving part conditions the weak current signal output by the GPIO module of the microcontroller to a strong current control signal capable of driving the IGBT, and controls the auxiliary IGBT module in the composite IGBT structure.
Furthermore, the simulation system based on the composite IGBT structure further comprises a voltage and current sensor and a signal acquisition system, and the voltage and current sensor is used for acquiring output voltage and current signals of the inverter module.
Further, the simulation system based on the composite IGBT structure also comprises a load module which comprises resistive, capacitive, inductive and mixed loads.
The invention also provides a control method of the simulation system based on the composite IGBT structure, which comprises the following steps: the working state of the inverter module is changed through the inverter working mode display and control module, and the inverter working mode display and control module sends a corresponding control signal to the microcontroller; and the microcontroller controls the composite IGBT structure according to the control signal, so that the inverter module comprising the composite IGBT structure works in different states.
Further, the inverter module is in a normal working state, so that the main IGBT module is in a switching state, and the auxiliary IGBT module is in a closing state.
Further, the inverter module is in an IGBT control signal missing fault state, so that the main IGBT module is in a always off state, and the auxiliary IGBT is in an always on state.
Further, the inverter module is in an IGBT open-circuit fault state, so that the main IGBT module is in a constantly off state, and the auxiliary IGBT is in a constantly off state.
Further, the value and the type of the load module are changed, and the influence of resistive load, inductive load, capacitive load and mixed load on the system is compared.
Further, the output signal of the inverter module is collected and stored through a voltage and current sensor and a signal collecting system.
The composite IGBT structure provided by the invention can simulate two different fault states of the inverter IGBT: an IGBT signal loss fault condition and an IGBT open fault condition.
The simulation system based on the composite IGBT structure can simulate three working states of an inverter by changing a control strategy under the condition of not damaging system hardware: the fault response condition under the different load conditions of the inverter is researched through a normal working state, an IGBT signal loss fault state and an IGBT open-circuit fault state. The characteristic signals of the inverter working in different states can be acquired and stored.
The control method of the simulation system based on the composite IGBT structure can simulate two different IGBT module faults which may occur when the inverter works in reality, greatly reduces the operation risk, and provides real and reliable experimental data for relevant inverter fault diagnosis research.
Drawings
The invention is further described with reference to the accompanying drawings:
fig. 1 is a schematic structural diagram of a composite IGBT structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a simulation system based on a composite IGBT structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a conventional inverter based on an improved composite IGBT structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a cascade inverter based on an improved composite IGBT structure according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a cascade inverter with an improved composite IGBT structure according to an embodiment of the present invention, which simulates that an IGBT operates in a normal operating state;
fig. 6 is a schematic diagram of a cascade inverter with an improved composite IGBT structure, which simulates that an IGBT works in an IGBT control signal missing fault state according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a cascaded inverter with an improved composite IGBT structure, which simulates that an IGBT operates in an IGBT open-circuit fault state according to an embodiment of the present invention.
Detailed Description
The composite IGBT structure, the simulation system based on the composite IGBT structure, and the control method thereof according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.
The core idea of the invention is that the composite IGBT structure provided by the invention can simulate two different fault states of the inverter IGBT: an IGBT signal loss fault condition and an IGBT open fault condition. The simulation system based on the composite IGBT structure can simulate three working states of an inverter by changing a control strategy under the condition of not damaging system hardware: the fault response condition under the different load conditions of the inverter is researched through a normal working state, an IGBT signal loss fault state and an IGBT open-circuit fault state. The characteristic signals of the inverter working in different states can be acquired and stored. The control method of the simulation system based on the composite IGBT structure can simulate two different IGBT module faults which may occur when the inverter works in reality, greatly reduces the operation risk, and provides real and reliable experimental data for relevant inverter fault diagnosis research.
Fig. 1 is a schematic structural diagram of a composite IGBT structure provided in an embodiment of the present invention. Referring to fig. 1, a composite IGBT structure 10 is provided, which is formed by connecting a main IGBT module 11 and an auxiliary IGBT module 12 in series: the emitter of the main IGBT module 11 is connected to the emitter of the auxiliary IGBT module 12, the collector of the main IGBT module 11 serves as an input port of the composite IGBT structure 10, the collector of the auxiliary IGBT module 12 serves as an output port of the composite IGBT structure 10, the gate level of the main IGBT module 11 and the gate level of the auxiliary IGBT module 12 are both control ports of the composite IGBT structure 10, and the main IGBT module 11 and the auxiliary IGBT module 12 are symmetrically equivalent. Two IGBT modules provided in the composite IGBT structure 10 are defined such that one of the IGBT modules is a main IGBT module and the other is an auxiliary IGBT module. Each IGBT module can be individually controlled to be closed and opened.
The composite IGBT structure 10 proposed above is applicable to inverters of various topology types. The method for improving the inverters with different topological structures by using the proposed composite IGBT structure 10 is as follows: the IGBT modules in the inverters with various topological structures are replaced by a composite IGBT structure 10, wherein a control signal of a main IGBT module 11 in the composite IGBT structure 10 is a control signal of an original IGBT module, a control signal of an auxiliary IGBT module 12 in the composite IGBT structure 10 is generated by a GPIO module of a microcontroller, and the GPIO signal generated by the microcontroller controls the opening and closing of the auxiliary IGBT module 12 through a corresponding IGBT driving circuit. The inverter module with the improved composite IGBT structure 10 can simulate inverters with various topologies to work in three different states: normal operating state, IGBT signal loss fault state and IGBT open circuit fault state.
Fig. 2 is a schematic structural diagram of a simulation system based on a composite IGBT structure according to an embodiment of the present invention. Referring to fig. 2, a composite IGBT structure based simulation system includes an inverter module 21 having the composite IGBT structure 10; a microcontroller 22 comprising a PWM module 221 and a GPIO module 222, the PWM module 221 providing control signals to the main IGBT module 11 in the composite IGBT structure 10 and the GPIO module 222 providing control signals to the auxiliary IGBT module 12 in the composite IGBT structure 10; the PWM module 221 and the GPIO module 222 provide corresponding control signals for the composite IGBT structure 10, the PWM module 221 provides corresponding control signals for the main IGBT module 11 in the composite IGBT structure 10, and the GPIO module 222 provides corresponding control signals for the auxiliary IGBT module 12 in the composite IGBT structure 10;
the inverter working mode display and control module 23 comprises a display part and a control part, wherein the display part displays the working state of the inverter module 21 in real time, the control part changes the working state of the inverter module 21, and the control part sends out a control signal to be transmitted to the microcontroller 22;
and the IGBT driving module 24 is connected with the microcontroller 22, the IGBT driving module 24 includes a main IGBT driving part 241 and an auxiliary IGBT driving part 242, the main IGBT driving part 241 controls the main IGBT module 11 in the composite IGBT structure 10, and the auxiliary IGBT driving part 242 controls the auxiliary IGBT module 12 in the composite IGBT structure 10. Specifically, the main IGBT driving section 241 conditions the weak current signal output by the PWM module 221 of the microcontroller 22 to a strong current control signal capable of driving the IGBT, and controls the main IGBT module 11 in the composite IGBT structure 10. The auxiliary IGBT driving section 242 conditions the weak current signal outputted from the GPIO module 222 of the microcontroller 22 to a strong current control signal that can drive the IGBT, controlling the auxiliary IGBT module 12 in the composite IGBT structure 10.
The power module comprises a weak current control system power module 251, a direct current bus power module 252 and a driving power supply module 253, the weak current control system power module 251 is respectively connected with the inverter working mode display and control module 23 and the microcontroller 22 to supply power for the inverter working mode display and control module 23 and the microcontroller 22, the direct current bus power module 252 is connected with the inverter module 21 to supply power for the inverter module 21, and the driving power supply module 253 is connected with the IGBT driving module 24 to supply power for the IGBT driving module 24. The power module supplies power to each module of the system respectively, and normal operation of the system is guaranteed.
The microcontroller 22 further comprises a communication module 223, and the microcontroller 22 is connected with the inverter operation mode display and control module 23 through the communication module 223.
The simulation system based on the composite IGBT structure further comprises a voltage and current sensor 26 and a signal acquisition system 27, and the voltage and current sensor is used for acquiring output voltage and current signals of the inverter module 21 and providing data for fault positioning and fault analysis. The composite IGBT structure based simulation system also includes a load module 28 that includes resistive, capacitive, inductive, and hybrid loads to increase the complexity and diversity of the system.
Fig. 3 is a schematic structural diagram of a conventional inverter based on an improved composite IGBT structure according to an embodiment of the present invention; fig. 4 is a schematic structural diagram of a cascade inverter based on an improved composite IGBT structure according to an embodiment of the present invention. Referring to fig. 3 and 4, a connection point of a collector (C pole) of a main IGBT module in the composite IGBT structure and a connection point of a collector (C pole) of an original IGBT module are connected, a connection point of a collector (C pole) of an auxiliary IGBT module in the composite IGBT structure and an emitter (E pole) of the original IGBT module is connected, wherein a control signal of the main IGBT module in the composite IGBT structure is a control signal of the original IGBT, a control signal of the auxiliary IGBT module in the composite IGBT is generated by a GPIO module of a microcontroller, and the GPIO signal generated by the microcontroller controls the opening and closing of the auxiliary IGBT module through a corresponding IGBT driving module. The inverter module with the improved composite IGBT structure can simulate various inverters with different topological structures to work in three different states: normal operating state, IGBT signal loss fault state and IGBT open circuit fault state.
The invention also provides a control method of the simulation system based on the composite IGBT structure, which comprises the following steps: the working state of the inverter module is changed through the inverter working mode display and control module, and the inverter working mode display and control module sends a corresponding control signal to the microcontroller; and the microcontroller controls the composite IGBT structure according to the control signal, so that the inverter module comprising the composite IGBT structure works in different states.
In the embodiment of the invention, the working state of the current inverter module is checked through the inverter working mode display and control module, the working state of the inverter module is changed by using the keys, and the inverter working mode display and control module transmits the corresponding control signal to the microcontroller. And the microcontroller receives the control signal, generates a corresponding control signal to control the composite IGBT structure by looking up the mode corresponding table and referring to the table I, so that the inverter module with the improved composite IGBT structure works in different states. The mode corresponding table (table one) is a control mode of a main IGBT module and an auxiliary IGBT module corresponding to three different working states of the IGBT, wherein a control signal of the main IGBT module is provided by a PWM module of the microcontroller, and a control signal of the auxiliary IGBT module is provided by a GPIO module of the microcontroller. The main IGBT module and the auxiliary IGBT module are simultaneously controlled to simulate three different states of the IGBT: normal operating state, IGBT signal loss fault state and IGBT open circuit fault state.
Watch 1
Fig. 5 is a schematic diagram of a cascade inverter with an improved composite IGBT structure according to an embodiment of the present invention, where the analog IGBT operates in a normal operating state. Referring to fig. 5, the main IGBT module is switched to give its normal high frequency switching signal to act as a high frequency switch in the circuit for the IGBT before modification; meanwhile, the auxiliary IGBT module is in a closed state all the time and is closed all the time, and the auxiliary IGBT module is equivalent to a wire in a circuit. At the moment, the composite IGBT structure is equivalent to a single IGBT, the inverter based on the improvement of the composite IGBT structure is equivalent to the inverter without the improvement, and the inverter with the improved composite IGBT structure can work in a normal working state.
Fig. 6 is a schematic diagram of a cascade-type inverter analog IGBT with an improved composite IGBT structure, which is provided by the embodiment of the present invention, operating in an IGBT control signal missing fault state. Referring to fig. 6, the main IGBT module is always in a disconnected state, and is turned off all the time, and at this time, it is used to simulate the characteristic of IGBT control signal missing fault; meanwhile, the auxiliary IGBT module is in a closed state all the time and is closed all the time, and the auxiliary IGBT module is equivalent to a wire in a circuit. At the moment, the composite IGBT structure is equivalent to a reverse diode, and the IGBT can be failed but can not damage the parallel reverse freewheeling diode to be disconnected due to the absence of the IGBT control signal in a fault state. Therefore, the inverter module with the improved composite IGBT can work in an IGBT control signal missing fault state. The IGBT control signal loss fault condition is two completely different faults from the IGBT full open fault condition due to the reverse freewheeling diode function.
Fig. 7 is a schematic diagram of a cascaded inverter with an improved composite IGBT structure, which simulates that an IGBT operates in an IGBT open-circuit fault state according to an embodiment of the present invention. Referring to fig. 7, the main IGBT module is always turned off, and is turned off, and the parallel reverse freewheeling diode is not affected; meanwhile, the auxiliary IGBT module is also in a constant disconnection state and is always disconnected, and the parallel reverse freewheeling diode is not influenced. At the moment, the composite IGBT structure is equivalent to two freewheeling diodes which are oppositely connected in series, the two freewheeling diodes are oppositely connected in series to cut off the bidirectional flow of current in the circuit, and the complete disconnection of the circuit is simulated. Therefore, the inverter with the improved composite IGBT structure can work in an IGBT open-circuit fault state.
And (3) changing the value and the type of the load module, and comparing the influence of resistive load, inductive load, capacitive load and mixed load on the system.
The output signals (such as voltage, current and the like) of the inverter are collected and stored through relevant voltage and current sensors and a signal collecting system.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (15)
1. The utility model provides a compound IGBT structure which characterized in that is formed by main IGBT module and supplementary IGBT module series connection: the emitter of the main IGBT module is connected with the emitter of the auxiliary IGBT module, the collector of the main IGBT module is used as an input port of the composite IGBT structure, the collector of the auxiliary IGBT module is used as an output port of the composite IGBT structure, the gate level of the main IGBT module and the gate level of the auxiliary IGBT module are both control ports of the composite IGBT structure, and the main IGBT module and the auxiliary IGBT module are symmetrically equivalent.
2. An analog system based on the composite IGBT structure of claim 1, comprising:
an inverter module having the composite IGBT structure;
a microcontroller comprising a PWM module and a GPIO module, the PWM module providing control signals to a main IGBT module in the composite IGBT structure, the GPIO module providing control signals to an auxiliary IGBT module in the composite IGBT structure;
the inverter working mode display and control module comprises a display part and a control part, wherein the display part displays the working state of the inverter module in real time, the control part changes the working state of the inverter module, and the control part sends a control signal to be transmitted to the microcontroller;
and the IGBT driving module is connected with the microcontroller, and comprises a main IGBT driving part and an auxiliary IGBT driving part, wherein the main IGBT driving part controls the main IGBT module in the composite IGBT structure, and the auxiliary IGBT driving part controls the auxiliary IGBT module in the composite IGBT structure.
3. The composite IGBT structure based simulation system according to claim 2, further comprising: the power supply module of the weak current control system is respectively connected with the inverter working mode display and control module and the microcontroller, the direct current bus power supply module is connected with the inverter module, and the driving power supply module is connected with the IGBT driving module.
4. The composite IGBT structure based simulation system according to claim 2, wherein the microcontroller further comprises a communication module through which the microcontroller is connected with the inverter operation mode display and control module.
5. The composite IGBT structure based simulation system according to claim 2, wherein the operating state comprises: normal operating state, IGBT signal loss fault state and IGBT open circuit fault state.
6. The composite IGBT structure-based simulation system according to claim 2, wherein the main IGBT driving section conditions a weak current signal output from the PWM module of the microcontroller to a strong current control signal that can drive the IGBT, and controls the main IGBT module in the composite IGBT structure.
7. The composite IGBT structure based analog system according to claim 2, wherein the auxiliary IGBT driving section conditions the weak current signal outputted from the GPIO module of the microcontroller to a strong current control signal that can drive the IGBT, controlling the auxiliary IGBT module in the composite IGBT structure.
8. The composite IGBT structure based simulation system according to claim 2, further comprising a voltage current sensor and a signal acquisition system that acquires an output voltage current signal of the inverter module.
9. The composite IGBT structure based simulation system according to claim 2, further comprising a load module comprising resistive, capacitive, inductive, and hybrid loads.
10. A control method using the composite IGBT structure-based analog system according to claim 2, characterized by comprising:
the working state of the inverter module is changed through the inverter working mode display and control module, and the inverter working mode display and control module sends a corresponding control signal to the microcontroller;
and the microcontroller controls the composite IGBT structure according to the control signal, so that the inverter module comprising the composite IGBT structure works in different states.
11. The method of claim 10, wherein the inverter module is in a normal operating state, the main IGBT module is in a switching state, and the auxiliary IGBT module is in a closed state.
12. The method of claim 10, wherein the inverter module is in an IGBT control signal loss fault state, the main IGBT module is in an always-off state, and the auxiliary IGBT module is in an always-on state.
13. The method of claim 10, wherein the inverter module is in an IGBT open fault state, the main IGBT module is in an always off state, and the auxiliary IGBT is in an always off state.
14. The method of claim 10, wherein the values and types of the load modules are changed to compare the influence of resistive load, inductive load, capacitive load and mixed load on the system.
15. The control method of the composite IGBT structure-based analog system according to claim 10, wherein the output signal of the inverter module is collected and stored by a voltage current sensor and a signal collection system.
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| WO2019220780A1 (en) * | 2018-05-15 | 2019-11-21 | 日本電産株式会社 | Failure diagnostic method, power converting device, motor module, and electric power steering device |
| CN111555650A (en) * | 2020-04-15 | 2020-08-18 | 中国地质大学（武汉） | Experimental device for two-level inverter switch tube fault simulation |
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| US20130051103A1 (en) * | 2011-08-30 | 2013-02-28 | Rolls-Royce Plc | Method of controlling an inverter and a controller for controlling an inverter |
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