CN206807297U - A kind of wide range input converting means grid-connected for distributed power source - Google Patents
A kind of wide range input converting means grid-connected for distributed power source Download PDFInfo
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- CN206807297U CN206807297U CN201720330640.8U CN201720330640U CN206807297U CN 206807297 U CN206807297 U CN 206807297U CN 201720330640 U CN201720330640 U CN 201720330640U CN 206807297 U CN206807297 U CN 206807297U
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Abstract
The utility model provides a kind of wide range input converting means grid-connected for distributed power source, is related to technical field of electric power system control.Including microprocessor unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT driver elements, voltage detection unit, current detecting unit, radio communication unit, LC wave filters and host computer.The utility model can widen the grid-connected input voltage range of distributed power source, grid-connected power output grade is classified, avoid due to influence of the voltage pulsation to distributed generation system caused by environment or other factorses, meet under varying environment the needs of to exporting grid-connected power, and with the interactive function of enhancing.
Description
Technical field
It the utility model is related to technical field of electric power system control, more particularly to a kind of width grid-connected for distributed power source
Range of voltages Input transformation device.
Background technology
Growing with energy resource consumption, non-renewable fossil fuel is exhausted at last, therefore green clean energy resource is such as
Wind-power electricity generation, photovoltaic generation, fuel cell etc. are developed rapidly.Distributed generation technology is grid-connected as clean energy resource to be had
Efficacious prescriptions formula, paid attention to by more and more people.Due to distributed generation system regulative mode and self structure inherent characteristic, utilize
The input energy of the distributed generation system of wind energy, solar energy etc. has natural fluctuation, so, distributed power source output power
Fluctuation is very big, and its output voltage is mostly changed in a very wide scope, and degree of uncertainty is high, easily causes line voltage
Fluctuation causes flickering, and distributed generation system can not carry out grade separation by related measure to power output, therefore, for
The input voltage range and multiterminal power output grade separation of distributed power source electricity generation system propose higher requirement.Divide at present
Cloth electricity generation system is mainly arranged by Boost-Buck step-up/step-down circuits come improve that distributed power source input voltage range widens
Apply, when the lifting for being related to power grade, generally require the high element of power grade, Boost-Buck step-up/step-down circuits are intrinsic
The characteristic of device limits the classification of the input voltage range and power grade of distributed generation system.Sent out for distributed power source
Electric system, not only need the control source of wide scope, it is also desirable to which simple and reliable measure is classified to power grade, to adapt to
To the demand of distributed generation system under varying environment.
Utility model content
The defects of for prior art, it is defeated that the utility model provides a kind of wide-range voltage grid-connected for distributed power source
Enter converting means, be directed to the lifting of the grid-connected input voltage range of distributed power source and point of grid-connected power output grade
Class, hardware-assist circuit and control system hardware configuration are combined, the grid-connected input voltage range of distributed power source can be widened,
Grid-connected power output grade is classified, avoided because voltage pulsation caused by environment or other factorses is to distributed power generation system
The influence of system, meet under varying environment the needs of to exporting grid-connected power, and with the interactive function of enhancing.
A kind of wide range input converting means grid-connected for distributed power source, including microprocessor unit, full-bridge
HF array unit, composite buffering protection location, power converter unit, MOSFET/IGBT driver elements, voltage detection unit,
Current detecting unit, radio communication unit, LC wave filters and host computer；
Described microprocessor unit includes main control chip, the first buffer chip and the second buffer chip；The MOSFET/
IGBT driver elements are connected by the first buffer chip with main control chip, and the current detecting unit and voltage detection unit are logical
Cross the second buffer chip to be connected with main control chip, the radio communication unit is directly connected with the main control chip；
The full-bridge high-frequency array element includes five structure identical full-bridge high-frequency mu balanced circuits, located at two direct current mothers
On line；Described full-bridge high-frequency array element includes three inputs and an output end, and the of described HF array unit
One input connects the energy storage conversion battery for being used as distributed grid-connected power supply, institute by current detecting unit with voltage detection unit
The second input for stating full-bridge high-frequency array element connects the MOSFET/IGBT driver elements output end, the full-bridge high-frequency
Second output end of the 3rd input connection microprocessor unit of array element, the output end of the full-bridge high-frequency array element
Connect the first input end of composite buffering unit；
The composite buffering protection location includes two structure identical the first composite buffering circuits and the second composite buffering
Circuit, it is respectively arranged on two buses I and II；The composite buffering protection location includes two inputs and two output ends,
The output end of the first input end connection HF array unit of the composite buffering protection location, the composite buffering protection location
The second input connect the output ends of the MOSFET/IGBT driver elements, the first of the composite buffering protection location is defeated
Go out the input of end connection current detecting unit, the second output end connection power converter unit of the composite buffering protection location
First input end；
The power converter unit includes 6 structure identical subelements, and the circuit structure of each subelement is with described
One or second composite buffering circuit circuit structure it is identical；
The MOSFET/IGBT driver elements include driving chip and peripheral protection circuit, for by microprocessor unit
Output signal carries out boosting processing, and then controls voltage needed for MOSFET and IGBT device grid；
The voltage detection unit is used to detect composite buffering protection location, HF array unit first input end and power
The voltage of the tunnel output end of converter unit three, including two groups of circuit structure identical voltage detecting circuits；
The current detecting unit includes bridge arm direct pass current detecting unit, bus current detection unit and load current inspection
Unit is surveyed, the detection circuit of the bridge arm direct pass fault current detection unit is to disperse current foldback circuit, the bus current
The detection protection circuit of detection unit and load current detection unit is concentration current foldback circuit, and is divided on two buses
Not She You a bus current detection unit, the load current detection unit located at load connecting line on；
The radio communication unit is connected with host computer；
The LC wave filters include three groups of LC filter circuits, and the inputs of three groups of LC filter circuits connects described respectively
Three tunnel output ends of power converter unit, the output end of three groups of LC filter circuits connect the triple line of power network respectively；
The host computer is mobile phone and computer PC, for the voltage, electric current and power information of real-time monitoring device, while energy
The break-make of control IGBT device is instructed by sending.
Further, the full-bridge high-frequency mu balanced circuit includes high voltage bus filter capacitor, the first MOSFET element, second
MOSFET element, the 3rd MOSFET element, the 4th MOSFET element, high frequency full-bridge boost transformer, first choice derailing switch,
One backward dioded, the second backward dioded, the 3rd backward dioded and the 4th backward dioded；The high voltage bus filtered electrical
First input end of the both ends of appearance as the HF array unit, the energy storage device as distributed generation system is connected, together
When connect voltage detection unit input；The drain electrode of first MOSFET element and the second MOSFET element connects height simultaneously
One end of bus filter capacitor is pressed, the source electrode of first MOSFET element connects the different name of high frequency full-bridge boost transformer simultaneously
The drain electrode of input and the MOSFET elements of tetra-, the source electrode of second MOSFET element connect the change of high frequency full-bridge boost simultaneously
The input of the same name of depressor and the drain electrode of the 3rd MOSFET element, the source of the 3rd MOSFET element and the 4th MOSFET element
Pole connects the other end of high voltage bus filter capacitor simultaneously；First MOSFET element, the second MOSFET element, the 3rd
Second input of the grid of MOSFET element and the 4th MOSFET element as HF array unit, connect MOSFET/IGBT
The output end of driver element；The output end of the same name of the high frequency full-bridge boost transformer connects the moon of the 3rd backward dioded simultaneously
Pole and the anode of the 4th backward dioded, the different name output end connection first choice derailing switch of the high frequency full-bridge boost transformer
First input end；Threeth input of the signal pins 2 of the first choice derailing switch as HF array unit, connection are micro-
Second output end of processor unit；The output end of the first choice derailing switch connects the anode of the first backward dioded simultaneously
With the negative electrode of the second backward dioded；The negative electrode connection of the negative electrode and the 4th backward dioded of the first described backward dioded,
As the first output end of the full-bridge high-frequency mu balanced circuit, the anode of second backward dioded and the 3rd backward dioded
Anode connects, the second output end as the full-bridge high-frequency mu balanced circuit；Five structure identical full-bridge high-frequency mu balanced circuits lead to
Cross the second output end of previous full-bridge high-frequency mu balanced circuit and the first output of adjacent next full-bridge high-frequency mu balanced circuit
Hold the mode that is connected to be connected, the series connection change-over terminal 1 of the first choice derailing switch of previous full-bridge high-frequency mu balanced circuit with
The output end of the same name connection of next full-bridge high-frequency mu balanced circuit medium-high frequency full-bridge boost transformer；First full-bridge high-frequency voltage stabilizing
First output end of circuit and the second output end of the 5th full-bridge high-frequency mu balanced circuit are collectively as full-bridge high-frequency array element
A pair of output, connect composite buffering unit first input end.
Further, the first composite buffering circuit includes the first IGBT device, first resistor, the 6th electric capacity, first
Inductance, the 21st backward dioded, the 22nd backward dioded；One end of first inductance is as the composite buffering
The first input end of protection location, the output end of full-bridge high-frequency array element is connected, while connect the 21st backward dioded
Negative electrode, the other end of first inductance connects the colelctor electrode of the first IGBT device, one end of first resistor, the 21st anti-
The anode of anode and the 22nd backward dioded to diode, the emitter stage connection the 22nd of first IGBT device
The negative electrode of backward dioded, the other end of first resistor, the positive pole of the 6th electric capacity, the first input end of power converter unit, institute
Second output end of the negative pole as composite buffering protection location of the 6th electric capacity is stated, connects the emitter stage and work(of the first IGBT device
The first input end of rate converter unit, the second input of the gate pole of the first IGBT device as composite buffering protection location, even
Connect the output end of MOSFET/IGBT driver elements；The colelctor electrode of the first described IGBT device as composite buffering unit
One output end, connect input, the output end of HF array unit of current detecting unit.
Further, the power converter unit also includes the 8th electric capacity；The gate pole of the IGBT device of each subelement is made
For the second input of power converter unit, the output end of connection IGBT driver elements；One end of inductance in each subelement point
Input not as corresponding subelement；Output of the emitter stage of IGBT device in each subelement respectively as corresponding subelement
End；The first subelement, the 3rd subelement, the input of the 5th subelement in 6 structures identical subelement are connected to
A bit, as the positive pole of the first input end of power converter unit, the of the first composite buffering circuit for being connected with bus I is connected
Two output ends；The second subelement, the 4th subelement in 6 structures identical subelement, the output end of the 6th subelement
It is connected to a bit, as the negative pole of the first input end of power converter unit, connects the second composite buffering being connected with bus II
Second output end of circuit；8th capacitance connection in the first subelement input and the second subelement output end it
Between；The first subelement, the 3rd subelement in 6 structures identical subelement, the output end of the 5th subelement are right respectively
The second subelement, the 4th subelement, the input of the 6th subelement should be connected, and it is defeated respectively as three tunnels of power converter unit
Go out end.
Further, the peripheral circuit of the MOSFET/IGBT driver elements includes the first diode, the 9th electric capacity, the
Ten electric capacity, current-limiting resistance, buffer resistance, feedback resistance, transistor and optocoupler；6 pin of driving chip connect the first diode
Anode, the negative electrode of the first diode are connected by the colelctor electrode of driving IGBT deviceWith the drain electrode of MOSFET element, the 2 of driving chip
Pin connects one end of 15V power supplys, the 9th capacitance cathode and feedback resistance simultaneously, and 3 pin of driving chip connect the tenth electric capacity simultaneously
Positive pole and buffer resistance one end；Output end of the other end of buffer resistance as IGBT driver elements, connects and is driven
The gate pole of IGBT deviceWith the grid of MOSFET element；The negative pole of 9th electric capacity and the tenth electric capacity connects by driving IGBT devices simultaneously
The emitter stage of part, MOSFET element source electrodeWith 1 pin of driving chip, 15 pin of driving chip connect one end of current-limiting resistance,
Current-limiting resistance the other end connection 15V power supplys, driving chip 14 pin connection transistor colelctor electrode, the emitter stage of transistor with
1 pin of optocoupler is connected, the first buffer chip of the grid connection microprocessor unit of transistor, 5 pin and optocoupler of driving chip
4 pin be connected, the other end of 3 pin of optocoupler connection feedback resistance, the 2 pins connection microprocessor unit of optocoupler.
Further, the voltage detection unit includes iron core and signal processing circuit, is wherein provided with iron core separation mouth
One Hall element, for the magnetic flux signal of iron core to be converted into electric signal, signal processing circuit includes amplifier chip, the one or three
Pole pipe, the second triode, measurement resistance；Amplifier chip input in the same direction connection Hall element one end, amplifier chip it is anti-
Phase input connects the other end of Hall element, and the positive source of amplifier chip connects power supply+VCC and the first triode simultaneously
Colelctor electrode, 4 pin of amplifier chip connect the emitter stage of power supply-VCC and the second triode simultaneously, and 5 pin of amplifier chip connect simultaneously
The base stage of the first triode and the base stage of the second triode are connect, the emitter stage of the first triode connects iron core secondary coil simultaneously
One end and the colelctor electrode of the second triode, the other end of iron core secondary coil is by measuring resistance eutral grounding.
Further, the scattered current foldback circuit is used to detect in composite buffering unit and power converter unit
The bridge arm direct pass electric current that IGBT device is formed, including first voltage comparator, 3rd resistor, the 4th resistance, the 5th resistance and the
Six resistance, the second diode and the 3rd diode and the first adjustable potentiometer；The input in the same direction of the first voltage comparator
One end of the 4th resistance and the anode of the second diode are connected, the negative electrode of the second diode is as the defeated of scattered current foldback circuit
Enter end, connect the colelctor electrode of each IGBT device in power converter unit；One end connection+15V dc sources of 3rd resistor, it is another
The other end of the 4th resistance of end connection and a fixing end of the first adjustable potentiometer；Another of first adjustable potentiometer is fixed
End ground connection, the sliding end of the first adjustable potentiometer are connected with one end of the 5th resistance, the electricity of other end connection first of the 5th resistance
Press the reverse input end of comparator；The positive source connection 15V dc sources of first voltage comparator, one end of the 6th resistance,
The pin 2 of the driving chip of MOSFET/IGBT driver elements；The power cathode ground connection of first voltage comparator, first voltage ratio
Signal output part compared with device is connected with the other end of the 6th resistance and the negative electrode of the 3rd diode, the anode conduct of the 3rd diode
The output end of scattered current foldback circuit, connect the pin 6 of the driving chip of MOSFET/IGBT driver elements, first voltage ratio
Signal output part compared with device connects the second buffer chip of microprocessor unit.
Further, the concentration current foldback circuit includes Hall current sensor, the 7th resistance, the 8th resistance, the
Nine resistance, the second adjustable potentiometer, the 11st electric capacity, the 12nd electric capacity and second voltage comparator；Hall current sensor is pacified
On connecting line loaded on tested measuring point, the signal output part of Hall current sensor and the input in the same direction of second voltage comparator
It is connected；7th resistance is in parallel with the 12nd electric capacity and then one end ground connection, the other end connect the input in the same direction of second voltage comparator
End, carry out signal filtering；Second fixing end of adjustable potentiometer one access 15V power supplys, another fixing end ground connection, sliding end with
The reverse input end of second voltage comparator is connected, there is provided feedback voltage；8th resistance one end access 5V power supplys are as pull-up electricity
Resistance, the signal output part of other end connection second voltage comparator and the 9th resistance one end；The other end of 9th resistance is as collection
One output port of middle current foldback circuit, is connected with the second buffer chip of microprocessor unit, while connects the 11st
One end of electric capacity, the other end ground connection of the 11st electric capacity；9th resistance and the 11st electric capacity form RC retardation ratio circuit.
Further, the described confession for being used for each unit in the grid-connected wide range input converting means of distributed power source
Electric part provides by the Switching Power Supply that (output ± 15V, 5V, 3.3V voltage) is exported with plurality of voltages.
As shown from the above technical solution, the beneficial effects of the utility model are：One kind provided by the utility model is used for
The grid-connected wide range input converting means of distributed power source, is directed to the grid-connected input voltage range of distributed power source
Lifting and the classification of grid-connected power output grade.Full-bridge high-frequency array element is added in distributed power source dc bus first, when
When distributed power source input voltage fluctuates, can automatic adjusument regulated output voltage, while can also be according to user terminal need
Ask, power output grade is classified；Next adds composite buffering unit, when being switched on or off bus IGBT device,
It can preferentially suppress to reduce the surge voltage amplitude on bus；Current Voltage detection unit is it is possible to additionally incorporate, respectively to IGBT bridge arms
Through current, bus bar side voltage x current, load side voltage electric current are monitored, and are recorded correlated current voltage data, are passed through computer
PC host computers are analyzed data, and foundation is provided for wide scope pressure regulation and the classification of power grade；Finally by current detecting
Unit is monitored positioning to the over current fault position of power converter unit, is delayed by hardware-assist circuit and microprocessor unit
Grid voltage is dropped, the over reach circuit failure protection time, is communicated using radio communication unit with mobile phone and computer, realizes mobile phone
The data sharing between computer, strengthen human-computer dialogue, avoid it from causing secondary damage to device change of current device, DC line and system
It is bad.The utility model combines hardware-assist circuit and control system hardware configuration, can widen the grid-connected electricity of distributed power source
Input range is pressed, grid-connected power output grade is classified, avoided due to voltage pulsation pair caused by environment or other factorses
The influence of distributed generation system, meet under varying environment the needs of to exporting grid-connected power, and it is interactive with strengthening
Function.
Brief description of the drawings
Fig. 1 is a kind of wide range input conversion grid-connected for distributed power source that the utility model embodiment provides
Apparatus structure schematic diagram；
Fig. 2 is the circuit theory diagrams for the microprocessor unit that the utility model embodiment provides；
Fig. 3 is the circuit theory diagrams for the full-bridge high-frequency array element that the utility model embodiment provides；
Fig. 4 is the circuit theory diagrams for the composite buffering circuit that the utility model embodiment provides；
Fig. 5 is the circuit theory diagrams for the power converter unit that the utility model embodiment provides；
Fig. 6 is distributed power source, energy storage and the conversion, full-bridge high-frequency array element, multiple that the utility model embodiment provides
Close buffer cell, the connection circuit theory diagrams of power converter unit and LC wave filters；
Fig. 7 is the circuit theory diagrams for the MOSFET/IGBT driver elements that the utility model embodiment provides；
Fig. 8 is the circuit theory diagrams for the voltage detection unit that the utility model embodiment provides；
Fig. 9 is the operation principle schematic diagram for the scattered current foldback circuit that the utility model embodiment provides；
Figure 10 is the principle of the scattered current foldback circuit for the access IGBT driving chips that the utility model embodiment provides
Figure；
Figure 11 is the concentration current foldback circuit on the distributed power source dc bus that the utility model embodiment provides
Circuit theory diagrams；
Figure 12 is that the composite buffering unit IGBT that the utility model embodiment provides turns off moment circuit theory diagrams；
Figure 13 is that the composite buffering unit IGBT that the utility model embodiment provides opens moment circuit theory diagrams；
First three phase current is effective for the installation wide range input converting means of the utility model embodiment offer by Figure 14
It is worth curve map；
Three-phase current is effective after the installation wide range input converting means that Figure 15 provides for the utility model embodiment
It is worth curve map.
In figure：1st, distributed power source；2nd, energy storage and converting means；3rd, full-bridge high-frequency array element；4th, composite buffering unit；
5th, power converter unit；6th, LC wave filters；7th, power network；8th, iron core；9th, Hall element.
Embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is used to illustrate the utility model, but is not limited to the scope of the utility model.
As shown in figure 1, a kind of wide range input converting means grid-connected for distributed power source, the device includes micro-
Processor unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT drivings are single
Member, voltage detection unit, current detecting unit, radio communication unit, LC wave filters and host computer.In the present embodiment, channel radio
News unit uses SIM808 wireless modules, and for the signal of microprocessing unit to be radioed into host computer, IGBT device uses
Model FZ1000R20KS4 IGBT module, MOSFET/IGBT driver elements use EXB841 IGBT integrated drives, on
Position machine be mobile phone and computer PC, voltage, current information for real-time monitoring device, while can pass through and send instruction and control
IGBT break-makes.The power pack of each unit with plurality of voltages by exporting (output ± 15V, 5V, 3.3V voltage) in device
Switching Power Supply provides.
Microprocessor unit is used to handle the voltage and current information that voltage detection unit and current detecting unit collect,
And then the break-make of IGBT driver elements control IGBT device is driven, while information transfer will be gathered to host computer, it is full-bridge high-frequency
Array boosting voltage stabilizing provides foundation.In the present embodiment, microprocessor unit includes TMS320F28335 main control chips, first
Buffer chip 74HC245 and the second buffer chip 743384, MOSFET/IGBT driver elements, current detecting unit and voltage inspection
Survey unit to be connected with main control chip by buffer chip, radio communication unit is directly connected with main control chip.
TMS320F28335 main control chips are the processors that a dominant frequency is up to 150MHZ, have the pulsewidth modulation end of 12 road mutual symmetries
Mouth PWM1-12,12 ADC converters of built-in 2*8 passages, has the SCI communication interfaces of 3 passages.
By taking one group of detection unit as an example, as shown in Fig. 2 microprocessor unit and the specific attachment structure of other peripheral cells
For：Pulsewidth modulation port PWM1, PWM2 of main control chip, PWM3, PWM4, PWM5, PWM6, PWM7, PWM8, PWM9, PWM10,
PWM11, PWM12 respectively A0, A1 with the first buffer chip 74HC245, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11,
A12 mouths connect one to one, and the first buffer chip 74HC245 B0 and B1 connect the S3 and S4 of MOSFET/IGBT driver elements
Mouthful, the B6 and B12 of 74HC245 buffer chips connect IN1 the and IN2 mouths of MOSFET/IGBT driver elements, TMS320F28335 master
A0 and A1 port of ADCINA0, ADCINA7 mouth of chip respectively with the second buffer chip 743384 is controlled to be connected,
D0 the and D18 mouths of TMS320F28335 main control chips connect A8 the and A15 ports of the second buffer chip 743384 respectively, and second is slow
The B0 and B7 for rushing chip 743384 are connected with OC1 the and OC2 ports of current detecting unit respectively, the second buffer chip 743384
B8 and R15 is connected with two output ports S1 and S2 of voltage detection unit respectively；Radio communication unit SIM808 modules
SCITXD mouths are connected with the SCIRXD mouths of TMS320F28335 main control chips, the SCIRXD mouths of radio communication unit SIM808 modules
It is connected with the SCITXD mouths of TMS320F28335 main control chips.
Full-bridge high-frequency array element includes five structure identical full-bridge high-frequency booster circuits, on two buses, uses
In the input voltage range grid-connected for widening distributed power source, full-bridge high-frequency array element includes three inputs and one defeated
Go out end, the first input end of full-bridge high-frequency array element is connected by electric current with voltage detection unit is used as distributed grid-connected power supply
Energy storage conversion battery, HF array unit the second input connection MOSFET/IGBT driver element output ends, HF array
Second output end of the 3rd input connection microprocessor of unit, the output end connection composite buffering unit of HF array unit
First input end.
Five full-bridge high-frequency boost circuit structures on two buses are identical, using first full-bridge high-frequency booster circuit as
Example, as shown in figure 3, including high voltage bus filter capacitor C1, four have high frequency cut-off MOSFET element Q1, Q2 of function, Q3,
Q4, high frequency full-bridge boost transformer TR1, selecting switch device K1, backward dioded VD1, VD2, VD3 and a VD4.High voltage bus
First input end of the filter capacitor C1 both ends as HF array unit, connect the energy storage device as distributed generation system
(being then only connected on two buses), while connect the input of voltage detection unit.First MOSFET element Q1 and second
MOSFET element Q2 drain electrode connects high voltage bus filter capacitor C1 one end simultaneously, and the first MOSFET element Q1 source electrode is simultaneously
Connect the different name input of high frequency full-bridge boost transformer and the drain electrode of the 4th MOSFET element, the second MOSFET element Q2 source
Pole connects the drain electrode of the input of the same name and the 3rd MOSFET element Q3 of high frequency full-bridge boost transformer, the 3rd MOSFET devices simultaneously
Part Q3 and the 4th MOSFET element Q4 source electrode connect the high voltage bus filter capacitor C1 other end simultaneously.First MOSFET element
Q1, the second MOSFET element Q2, the 3rd MOSFET element Q3 and the 4th MOSFET element Q4 grid are as HF array unit
The second input, connect MOSFET/IGBT driver elements output end.The output end of the same name of high-frequency step-up transformer connects simultaneously
Connect the 3rd backward dioded VD3 negative electrode and the 4th backward dioded VD4 anode, the different name output end of high-frequency step-up transformer
Connect selecting switch device K1 first input end, selecting switch device K1 signal pins 2 are the 3rd defeated as HF array unit
Enter end, connect the second output end of microprocessor unit, selecting switch device K1 output end connects the first backward dioded simultaneously
The negative electrode of VD1 anode and the second backward dioded VD2, the first backward dioded VD1 and the 4th backward dioded VD4 negative electrode
As the first output end of the full-bridge high-frequency mu balanced circuit, the second backward dioded VD2 anode and the 3rd backward dioded VD3
Anode connection, the second output end as the full-bridge high-frequency mu balanced circuit.Five structure identical full-bridge high-frequency mu balanced circuits
It is defeated by the first of the second output end of previous full-bridge high-frequency mu balanced circuit and adjacent next full-bridge high-frequency mu balanced circuit
Go out the mode that end is connected to be connected, i.e., the second output end of first full-bridge high-frequency mu balanced circuit and second full-bridge high-frequency
First output end of mu balanced circuit is connected, the second output end of second full-bridge high-frequency mu balanced circuit and the 3rd full-bridge high-frequency
First output end of mu balanced circuit is connected, by that analogy, finally, the first output end of first full-bridge high-frequency mu balanced circuit and
Second output end of the 5th full-bridge high-frequency mu balanced circuit is collectively as a pair of output of full-bridge high-frequency array element, and connection is again
Close the first input end of buffer cell；Then, the series connection switching of the first choice derailing switch of previous full-bridge high-frequency mu balanced circuit
End 1 is connected with the output end of the same name of next full-bridge high-frequency mu balanced circuit medium-high frequency full-bridge boost transformer.
Composite buffering protection location includes two structure identical composite buffering circuits, is respectively arranged on two buses I and II
On, peak voltage on bus during for suppressing IGBT break-makes.Composite buffering protection location includes two inputs and two outputs
End, the output end of the first input end connection HF array unit of composite buffering protection location, the of composite buffering protection location
Two inputs connect MOSFET/IGBT driver element output ends, the first output end connection electric current inspection of composite buffering protection location
Survey the input of unit, the first input end of the second output end connection power converter unit of composite buffering protection location.
Composite buffering circuit structure identical the first composite buffering circuit and the second composite buffering circuit on two buses,
By taking the first composite buffering circuit on bus I as an example, as shown in figure 4, including a high frequency cut-off function IGBT device VT1,
Resistance R1, the 6th electric capacity C6, inductance L1, the 21st backward dioded VD21 and the 22nd backward dioded VD22, specifically
Attachment structure is：Input of the inductance L1 one end as the composite buffering circuit, i.e. the first of composite buffering protection location are defeated
Enter end, connect the output end of HF array unit, while connect the 21st backward dioded VD21 negative electrode, inductance L1's is another
One end connection IGBT device VT1 colelctor electrode, resistance R1 one end, the 21st backward dioded VD21 anode and the 20th
Two backward dioded VD22 anode, IGBT device VT1 emitter stage connect the 22nd backward dioded VD22 negative electrode, electricity
The R1 other end, electric capacity C6 positive pole and the first input end of power converter unit is hindered, electric capacity C6 negative pole is as composite buffering
Second output end of protection location, connection IGBT device VT1 emitter stage and the first input end of power converter unit；IGBT devices
Second input of the part VT1 gate pole as composite buffering protection location, connect the output end of MOSFET/IGBT driver elements.
First output end of the IGBT device VT1 colelctor electrode as composite buffering unit, connect input, the high frequency of current detecting unit
The output end of array element；Second output end of the IGBT device VT1 emitter stage as composite buffering unit, connect power frequency conversion
The first input end of unit.
Power converter unit is used to bus bar side DC voltage being changed into grid side alternating voltage, as shown in figure 5, including filter
Ripple Support Capacitor C8 and 6 structure identical subelements, the circuit structure of each subelement are electric with the first or second composite buffering
The circuit structure on road is identical.The first subelement of IGBT device VT3 and its peripheral circuit as power converter unit, IGBT device
The second subelement of VT4 and its peripheral circuit as power converter unit, IGBT device VT5 and its peripheral circuit become as power
The 4th subelement of 3rd subelement of frequency unit, IGBT device VT6 and its peripheral circuit as power converter unit, IGBT devices
The 5th subelement of part VT7 and its peripheral circuit as power converter unit, IGBT device VT8 and its peripheral circuit are as power
6th subelement of converter unit.By taking the first subelement as an example, including a high frequency cut-offs IGBT device VT3, the resistance of function
R3, electric capacity C9, inductance L3, backward dioded VD24, backward dioded VD25；Inductance L3 one end connection backward dioded VD24
Negative electrode, the inductance L3 other end connection IGBT device VT3 colelctor electrode, resistance R3 one end, backward dioded VD24 sun
Pole and backward dioded VD25 anode, IGBT device VT3 emitter stage connection backward dioded VD25 negative electrode, resistance R3
The positive pole of the other end, electric capacity C9, electric capacity C9 negative pole connection IGBT device VT3 emitter stage, IGBT device VT3 gate pole conduct
Second input of power converter unit, connect IGBT the first output ends of driver element.Inductance L3, L4, L5 in each subelement,
The input of L6, L7, L8 to one end that backward dioded negative electrode connects respectively as corresponding subelement, the IGBT in each subelement
Output end of device VT3, VT4, VT5, VT6, VT7, VT8 emitter stage respectively as corresponding subelement.Power converter unit
First subelement, the 3rd subelement, the input of the 5th subelement are connected to a bit, the first input as power converter unit
The positive pole at end, while the second output end of the first composite buffering circuit being connected with bus I is connected, the second subelement, the 4th son
Unit, the output end of the 6th subelement are connected to a bit, as the negative pole of the first input end of power converter unit, are connected simultaneously
Second output end of the second composite buffering circuit being connected with bus II.Electric capacity C8 is connected to the input and second of the first subelement
Between the output end of subelement.First subelement of power converter unit, the 3rd subelement, the output end difference of the 5th subelement
The second subelement of corresponding connection power converter unit, the 4th subelement, the input of the 6th subelement, and become respectively as power
Three tunnel output ends of frequency unit.
The connection of distributed power source, full-bridge high-frequency array element, composite buffering unit, power converter unit and LC wave filters
Circuit is as shown in Figure 6.
MOSFET/IGBT driver elements are used to microprocessor unit output signal carrying out boosting processing, and then control
Voltage needed for MOSFET processed and IGBT device grid, including EXB841 driving chips and peripheral protection circuit, as shown in fig. 7, its
Middle peripheral circuit include ERA34-10 diodes D1, electric capacity C10, C11, current-limiting resistance Re, buffer resistance RG, feedback resistance Rf,
Transistor TCR and TLP251 optocoupler.Each IGBT driver elements drive one group of half-bridge being made up of two IGBT.To drive one
Exemplified by individual IGBT circuits, driving chip EXB841 6 pin connection ERA34-10 diodes D1 anode, ERA34-10 diodes D1
Negative electrode connection connected simultaneously by the drain electrode of the colelctor electrode of driving IGBT device and MOSFET element, driving chip EXB841 2 pin
Connect one end of 15V power supplys, electric capacity C10 positive poles and feedback resistance Rf, electric capacity C11 positive pole while 3 with driving chip EXB841
Pin, buffer resistance RG one end are connected；Output end of the buffer resistance RG other end as IGBT driver elements, connects and is driven
The gate pole of IGBT device and the grid of MOSFET element, electric capacity C10 and electric capacity C11 negative pole connect by driving IGBT hair simultaneously
1 pin of emitter-base bandgap grading, the source electrode of MOSFET element and driving chip EXB841, driving chip EXB841 15 pin connection current-limiting resistance Re
One end, current-limiting resistance Re other end connection 15V power supplys, driving chip EXB841 14 pin connection transistor TCR current collection
Pole, transistor TCR emitter stage are connected with 1 pin of TLP251 optocouplers, and transistor TCR grid connects as IGBT driver elements
The input IN1 of microprocessor control signals and the first buffer chip 74HC245 of microprocessor unit B6 ends connect；Driving
Chip EXB841 5 pin are connected with 4 pin of TLP251 optocouplers, the 3 pin connection feedback resistance Rf of the TLP251 optocouplers other end,
B0 port of 2 pins of TLP251 optocouplers as the first buffer chip 74HC245 of S3 ports connection microprocessor unit.It is compound
Output end of the gate pole of all IGBT devices in buffer cell and power converter unit with IGBT driver elements is connected.
Voltage detection unit is used for the first input end and work(for detecting composite buffering protection location, full-bridge high-frequency array element
The voltage of the tunnel output end of rate converter unit three, including two groups of circuit structure identical voltage detecting circuits.
By taking one group of voltage detection unit circuit as an example, as shown in figure 8, including an iron core and signal processing circuit, wherein
Iron core separated place is provided with a Hall element, and effect is that iron core magnetic messenger is converted into electric signal, and signal processing circuit includes
One amplifier U0, two triodes Qs1, Qs2 and a measurement resistance RM, wherein amplifier model LM358 models, specific connection
Structure is：Amplifier U0 input in the same direction (pin 1) and reverse input end (pin 2) is connected with the both ends of Hall element respectively,
First input end of the amplifier U0 pin 3 as voltage detection unit, at the same with the colelctor electrode phase of+15V power supplys and triode Qs1
Even, second input of the amplifier U0 pin 4 as voltage detection unit, while connect -15V power supplys and triode Qs2 hair
Emitter-base bandgap grading, 5 pin of amplifier chip connect the base stage of the first triode and the base stage of the second triode, triode Qs1 transmitting simultaneously
Pole is connected with triode Qs2 colelctor electrode and one end of iron core secondary coil simultaneously, and the other end connection of iron core secondary coil is surveyed
Resistance RM one end is measured, measurement resistance RM other end ground connection, the input of iron core primary coil is as voltage detection unit
3rd input, the first input end of HF array unit is connected, measurement resistance RM one end S1 is as voltage detection unit
Output end.Two resistance of primary coil side refer to accessing the internal resistance of wire in Fig. 8, are virtual equivalence values, do not have in circuit
It is of practical significance, left end connection is the voltage for inputting end to be detected.
Whether the electric current that current detecting unit is used for measuring point to be checked in detection means exceeds or falls below predetermined current threshold model
Enclose, including bridge arm direct pass current detecting unit, bus current detection unit and load current detection unit.Bridge arm direct pass electric current is examined
The detection circuit for surveying unit is scattered current foldback circuit, to be detected in composite buffering unit and power converter unit for detecting
Whether the bridge arm direct pass electric current that point IGBT device is formed exceedes pre-set current value, for detecting composite buffering unit and power frequency conversion
Scattered current foldback circuit structure in unit is identical.The detection circuit of bus current detection unit and load current detection unit
It is concentration current foldback circuit, whether the electric current that bus current detection unit is used to detect measuring point to be checked on bus is more than default
Current value, and a bus current detection unit is respectively equipped with two buses, load current detection unit connects located at load
In wiring, whether the electric current for detecting measuring point to be checked on load connecting line exceedes pre-set current value.Bridge arm direct pass fault current
In the test position such as Fig. 5 of detection unit or 6 3. and 4., in the test position such as Fig. 5 of bus current detection unit or 6 1.
2. in the test position such as Fig. 5 of load current detection unit or 6 5..
The operation principle of scattered current foldback circuit is as shown in figure 9, setting thresholds of the Vref as scattered current foldback circuit
Threshold voltage, when comparator detects 0 point of voltage more than the threshold voltage set, comparator output high level passes through and door
AND exports high level signal to microprocessing unit, and then sends pulse control signal, control IGBT break-makes, prevent device by
Secondary damage.
By taking the scattered current foldback circuit located at the measuring point to be checked of power converter unit as an example, Figure 10 provides for the present embodiment
Access IGBT driver elements scattered current foldback circuit fundamental diagram, the concrete structure of scattered current foldback circuit includes
Voltage comparator U1, resistance R9, R10, R11 and R12, Schottky diode D2 and D3, blue white adjustable potentiometer RP1 (are used for adjusting
Section setting voltage threshold).LM339 voltage comparators U1 input in the same direction connection resistance R10 one end and Schottky diode
D2 anode, Schottky diode D2 negative electrode connect power converter unit as the input for disperseing current foldback circuit
IGBT device VT3 colelctor electrode；A resistance R9 termination+15V dc sources, resistance R9 another terminating resistor R10's is another
End and an adjustable potentiometer RP1 fixing end；Adjustable potentiometer RP1 another fixing end ground connection, adjustable potentiometer RP1's
Sliding end is connected with resistance R11 one end, resistance R11 other end connection voltage comparator U1 reverse input end；Resistance R12
One end connection 15V dc sources, and connect voltage comparator U1 positive source, MOSFET/IGBT driver elements simultaneously
Driving chip EXB841 pin 2 and decoupling capacitor C12 one end, decoupling capacitor C12 are after access disperses current foldback circuit
The decoupling capacitor added, change a kind of understanding mode, be exactly between the positive pole (pin 1) and power cathode (GND) of LM339 power supplys,
Add a decoupling capacitor C12；The voltage comparator U1 pin of power cathode 14 ground connection, LM339 voltage comparators U1 signal are defeated
Go out end with the resistance R12 other end and Schottky diode D3 negative electrode to be connected, Schottky diode D3 anode is as scattered
The output end of current foldback circuit, the pin 6 of the driving chip of MOSFET/IGBT driver elements is connected, voltage comparator U1's
Signal output part OUT is the ADOC1 mouths of the second buffer chip connection of current detecting unit and microprocessor unit.Resistance R9 with
Blue white adjustable potentiometer RP1 series connection, by adjustable potentiometer RP1, feedback is provided to LM339 voltage comparators U1 through resistance R11
Voltage Vref, LM339 voltage comparator U1 input in the same direction is carried out by diode D2 to the collector voltage of IGBT device
Collection, by compared with default Vref value, and then differentiate whether the bridge arm of IGBT device occurs over current fault.
In a distributed manner exemplified by the concentration current foldback circuit on power DC bus, as shown in figure 11, overcurrent protection is concentrated
The concrete structure of circuit is by taking bus I as an example, including Hall current sensor H1, resistance R13, R14, R15, blue white adjustable potentiometer
RP2, electric capacity C14, C15 and LM339 voltage comparator U2, wherein, Hall current sensor H1 is using Japanese HINODE companies
Direct measuring type hall effect current sensor HAP8-200/4, the sensor need positive and negative 15V dual power supplies to be powered.Circuit is specific
Attachment structure be：Hall current sensor H1 signal output part and LM339 voltage comparators U2 input (pin in the same direction
3) it is connected；Resistance R13 latter end ground connection in parallel with electric capacity C15, other end connection LM339 voltage comparators U2 input in the same direction
(pin 3), carry out signal filtering；Mono- fixing end access 15V power supply of adjustable potentiometer RP2, another fixing end ground connection, is slided
End is connected with LM339 voltage comparators U2 reverse input end pin 2, there is provided feedback voltage；5V power supplys are accessed in resistance R14 one end
As pull-up resistor, other end connection LM339 voltage comparators U2 signal output part (pin 1) and resistance R15 one end, it is used for
The current driving ability of LM339 voltage comparator U2 signal output parts is improved, the resistance R15 other end is as concentration overcurrent protection
The ADOC2 of one output port OC1 of circuit, i.e. current detecting unit and microprocessor unit the second buffer chip connection
Mouthful, while electric capacity C14 one end is connected, electric capacity C14 other end ground connection, resistance R15 and electric capacity C14 form RC retardation ratio circuit.
The buffered resistance R15 outputs level signals OC1 of LM339 voltage comparator U2 signal output parts (pin 1) signal to microprocessor,
Current data is recorded, when seriously exceeding threshold value, blocks all IGBT drive signal, also, resistance R15 and electric capacity
The delay circuit of C14 compositions is to prevent lockout circuit from malfunctioning the interference protection measure taken.Another bus is provided with identical
The concentration current foldback circuit of structure, its output port are OC2.
LC wave filters are used to filter out harmonic wave caused by power converter unit, including three groups of LC filter circuits, three groups of LC filtering
The input of circuit connects three tunnel output ends of power converter unit respectively, and the output end of three groups of LC filter circuits connects electricity respectively
The triple line of net.
It is used for distributed power source by what the grid-connected wide range input converting means of above-mentioned distributed power source was realized
The method of grid-connected wide range input conversion, specifically includes following steps：
Step 1, full-bridge high-frequency array element, composite buffering protection location, power frequency conversion controlled using microprocessor unit
The inner member of unit and MOSFET/IGBT driver elements, whole control source converting means is set to be in running status, specific side
Method is：
Step 1.1, SPWM (sinusoidal pulse width modulation) signal is sent using microprocessor unit；
Step 1.2, boosting processing carried out by MOSFET/IGBT driver elements, SPWM voltage signal magnitudes are raised to
15V；
Step 1.3, respectively driving full-bridge high-frequency 20 MOSFET elements of array element, two of IGBT composite buffering units
6 IGBT devices of IGBT device and power converter unit, make each MOSFET and IGBT device alternate conduction, are used in distributed electrical
The grid-connected wide range input converting means in source is in normal operating condition；
The scattered overcurrent protection in measurement resistance RM, current detecting unit in step 2 while use voltage detection unit
Circuit, concentrate voltage, composite buffering protection location and power frequency conversion of the current foldback circuit to full-bridge high-frequency array element front end
The electric current and voltage of unit are gathered in real time；
Voltage detection unit produces signal all the way, gives microprocessor unit, is preset when fluctuating occurs in voltage more than first
During input voltage range, promote the change of MOSFET element dutycycle, change the output voltage of full-bridge high-frequency array element, avoid
Due to influence of the fluctuation to output voltage of input voltage；
Level signal caused by concentration current foldback circuit in bus current detection unit and load current detection unit
The EXB841 driving chips and microprocessor unit of MOSFET/IGBT driver elements are given by the delay of RC retardation ratio circuit
ADCINA0-A7 mouths；
Each road electric current of microprocessor unit acquisition and recording and voltage data, build terminal voltage and detection branch to be detected in real time
Graph of relation；
The position of step 3, microprocessor unit failure judgement electric current, judge current value whether more than 1.2 times setting values, treat
Whether test side input voltage if wherein any one exceed or both simultaneously exceed, illustrate appearance former more than 48-198V
Barrier, corresponding unit is trouble unit, performs step 4, otherwise illustrates that system is working properly, returns and performs step 2, continues to examine
Survey；
Step 4, when there is voltage failure, microprocessor unit produces control signal and is simultaneously sent to full-bridge high-frequency array list
The corresponding MOSFET element of member, according to voltage change range, linear regulation driving MOSFET element signal dutyfactor, adaptively changing
The output voltage of full-bridge high-frequency array element；When there is current failure, it is concurrent that control signal is produced using microprocessor unit
Deliver in the corresponding units of failure, slow drop grid voltage is carried out to the IGBT device of trouble unit；Microprocessor unit is remembered simultaneously
The position of the lower fault current of record, produces corresponding numbering, numbering 1 is bus current failure, and numbering 2 is bridge arm direct pass failure, is compiled
Numbers 3 and 5 be load short circuits failure, and it is micro- to mobile phone, report that by SIM808 radio communication units failure logging is sent into short message
The fault message that processor unit is judged, intermediate alarm signal of being concurrently out of order, give failed transmission to computer PC host computers；Electricity
Brain PC host computers are contrasted the failure stored in existing failure and computer data, determine type and the position of fault current
Put；
Step 5, microprocessor further differentiate to fault current voltage detecting, judge whether current value sets more than 1.5 times
Definite value, input voltage whether more than 50-200V, if any one exceed or both exceed simultaneously, assert correspondence position
Serious under-voltage, short-circuit or over current fault, performs step 6, otherwise performs step 2；
Step 6, microprocessor unit send control signal, block input signal, and serious short circuit or excessively stream event occur for shut-off
MOSFET or IGBT device in the unit of barrier, fault message is continuously sent by SIM808 radio communication units short
Letter is to user mobile phone, while microprocessor unit produces failure Critical alerts signal, gives failed transmission to computer PC host computers, keeps away
Exempt to cause secondary damage to inverter.
In the present embodiment, when completing control source conversion, shut-off IGBT device forms composite buffering as shown in figure 12
Circuit structure, the electric current in inductance L1 are discharged by diode VD21, while the energy warp of the stray inductance storage in VT1
Cross electric capacity C6 and resistance R1 be released, buffered shut-off IGBT device caused by excessively stream, avoid IGBT device from damaging.
In the present embodiment, when control source converting means brings into operation, open IGBT device and formed as shown in fig. 13 that
Composite buffering circuit structure, inductance L1 inhibit the current-rising-rate for opening IGBT moments in colelctor electrode side, reduce colelctor electrode
Side surge peak voltage, while VT1 opens the surge current of moment and is released by VD22 and C6, such as the dotted line road in figure
Footpath, surge current caused by opening IGBT moments is buffered, has avoided IGBT device from damaging.
In installation control source converting means three-phase voltage effective value curve as shown in figure 14, installation control source becomes
Three-phase voltage virtual value curve as shown in figure 15 after changing device, the 5ms to 35ms after opening is can be seen that from the curve in figure
Period, after installation voltage pulsation phenomenon be improved significantly, after 42ms, AC voltage waveform be improved significantly, it is defeated
Go out voltage to tend to be steady.
Finally it should be noted that：Above example is only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：
It can still modify to the technical scheme described in previous embodiment, either to which part or all technical characteristic
Carry out equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from the utility model right and want
Seek limited range.
Claims (9)
- A kind of 1. wide range input converting means grid-connected for distributed power source, it is characterised in that：Including microprocessor Unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT driver elements, voltage Detection unit, current detecting unit, radio communication unit, LC wave filters and host computer；Described microprocessor unit includes main control chip, the first buffer chip and the second buffer chip；The MOSFET/IGBT Driver element is connected by the first buffer chip with main control chip, and the current detecting unit and voltage detection unit pass through Two buffer chips are connected with main control chip, and the radio communication unit is directly connected with the main control chip；The full-bridge high-frequency array element includes five structure identical full-bridge high-frequency mu balanced circuits, located at two dc bus On；Described full-bridge high-frequency array element includes three inputs and an output end, and the first of described HF array unit Input connects the energy storage conversion battery for being used as distributed grid-connected power supply by current detecting unit with voltage detection unit, described Second input of full-bridge high-frequency array element connects the MOSFET/IGBT driver elements output end, the full-bridge high-frequency battle array Second output end of the 3rd input connection microprocessor unit of column unit, the output end of the full-bridge high-frequency array element connect Connect the first input end of composite buffering unit；The composite buffering protection location includes two structure identical the first composite buffering circuits and the second composite buffering circuit, It is respectively arranged on two buses I and II；The composite buffering protection location includes two inputs and two output ends, described multiple The output end of the first input end connection HF array unit of conjunction buffer protection unit, the second of the composite buffering protection location Input connects the output end of the MOSFET/IGBT driver elements, and the first output end of the composite buffering protection location connects The input of current detecting unit is connect, the second output end of the composite buffering protection location connects the first of power converter unit Input；The power converter unit includes 6 structure identical subelements, the circuit structure of each subelement with described first or The circuit structure of second composite buffering circuit is identical；The MOSFET/IGBT driver elements include driving chip and peripheral protection circuit；The voltage detection unit includes two groups of circuit structure identical voltage detecting circuits；The current detecting unit includes bridge arm direct pass current detecting unit, bus current detection unit and load current detection list Member, the detection circuit of the bridge arm direct pass fault current detection unit is scattered current foldback circuit, the bus current detection The detection protection circuit of unit and load current detection unit is concentration current foldback circuit, and is set respectively on two buses There is a bus current detection unit, the load current detection unit is on load connecting line；The radio communication unit is connected with host computer；The LC wave filters include three groups of LC filter circuits, and the input of three groups of LC filter circuits connects the power respectively Three tunnel output ends of converter unit, the output end of three groups of LC filter circuits connect the triple line of power network respectively；The host computer is mobile phone and computer PC.
- 2. the wide range input converting means grid-connected for distributed power source according to claim 1, its feature exist In：The full-bridge high-frequency mu balanced circuit includes high voltage bus filter capacitor, the first MOSFET element, the second MOSFET element, the Three MOSFET elements, the 4th MOSFET element, high frequency full-bridge boost transformer, first choice derailing switch, the first backward dioded, Second backward dioded, the 3rd backward dioded and the 4th backward dioded；The both ends conduct of the high voltage bus filter capacitor The first input end of the HF array unit, the energy storage device as distributed generation system is connected, while connect voltage inspection Survey the input of unit；The drain electrode of first MOSFET element and the second MOSFET element connects high voltage bus filtered electrical simultaneously One end of appearance, the source electrode of first MOSFET element connect the different name input and of high frequency full-bridge boost transformer simultaneously The drain electrode of four MOSFET elements, the source electrode of second MOSFET element connect the of the same name defeated of high frequency full-bridge boost transformer simultaneously Enter the drain electrode of end and the 3rd MOSFET element, the source electrode of the 3rd MOSFET element and the 4th MOSFET element connects height simultaneously Press the other end of bus filter capacitor；First MOSFET element, the second MOSFET element, the 3rd MOSFET element and the 4th Second input of the grid of MOSFET element as HF array unit, connect the output end of MOSFET/IGBT driver elements； The output end of the same name of the high frequency full-bridge boost transformer connects negative electrode and the 4th reverse two pole of the 3rd backward dioded simultaneously The anode of pipe, the first input end of the different name output end connection first choice derailing switch of the high frequency full-bridge boost transformer；Institute Threeth input of the signal pins 2 as HF array unit of first choice derailing switch is stated, connects the of microprocessor unit Two output ends；The output end of the first choice derailing switch connects anode and the second reverse two pole of the first backward dioded simultaneously The negative electrode of pipe；The negative electrode connection of the negative electrode and the 4th backward dioded of the first described backward dioded, as the full-bridge high-frequency First output end of mu balanced circuit, the anode connection of the anode and the 3rd backward dioded of second backward dioded, as Second output end of the full-bridge high-frequency mu balanced circuit；Five structure identical full-bridge high-frequency mu balanced circuits are high by previous full-bridge The mode that second output end of frequency mu balanced circuit is connected with the first output end of adjacent next full-bridge high-frequency mu balanced circuit Connected, series connection change-over terminal 1 and the next full-bridge high-frequency of the first choice derailing switch of previous full-bridge high-frequency mu balanced circuit The output end of the same name connection of mu balanced circuit medium-high frequency full-bridge boost transformer；First output of first full-bridge high-frequency mu balanced circuit Second output end of end and the 5th full-bridge high-frequency mu balanced circuit connects collectively as a pair of output of full-bridge high-frequency array element Connect the first input end of composite buffering unit.
- 3. the wide range input converting means grid-connected for distributed power source according to claim 2, its feature exist In：The first composite buffering circuit includes the first IGBT device, first resistor, the 6th electric capacity, the first inductance, the 21st anti- To diode, the 22nd backward dioded；One end of first inductance as the composite buffering protection location first Input, the output end of full-bridge high-frequency array element is connected, while connect the negative electrode of the 21st backward dioded, described first The other end connection colelctor electrode of the first IGBT device, one end of first resistor, the anode of the 21st backward dioded of inductance With the anode of the 22nd backward dioded, the emitter stage of first IGBT device connects the moon of the 22nd backward dioded Pole, the other end of first resistor, the positive pole of the 6th electric capacity, the first input end of power converter unit, the 6th electric capacity are born Second output end of the pole as composite buffering protection location, connect the first IGBT device emitter stage and power converter unit the One input, the second input of the gate pole of the first IGBT device as composite buffering protection location, connection MOSFET/IGBT drive The output end of moving cell；First output end of the colelctor electrode of the first described IGBT device as composite buffering unit, connection electricity Flow input, the output end of HF array unit of detection unit.
- 4. the wide range input converting means grid-connected for distributed power source according to claim 3, its feature exist In：The power converter unit also includes the 8th electric capacity；The gate pole of the IGBT device of each subelement is used as power converter unit The second input, connect IGBT driver elements output end；One end of inductance in each subelement is single respectively as corresponding son The input of member；Output end of the emitter stage of IGBT device in each subelement respectively as corresponding subelement；6 structures The first subelement, the 3rd subelement, the input of the 5th subelement in identical subelement are connected to a bit, are become as power The positive pole of the first input end of frequency unit, connect the second output end of the first composite buffering circuit being connected with bus I；Described 6 The second subelement, the 4th subelement in individual structure identical subelement, the output end of the 6th subelement be connected to a bit, as The negative pole of the first input end of power converter unit, connect the second output of the second composite buffering circuit being connected with bus II End；8th capacitance connection is between the input of the first subelement and the output end of the second subelement；6 structure phases With subelement in the first subelement, the 3rd subelement, the output end of the 5th subelement be connected respectively the second subelement, 4th subelement, the input of the 6th subelement, and respectively as three tunnel output ends of power converter unit.
- 5. the wide range input converting means grid-connected for distributed power source according to claim 4, its feature exist In：The peripheral circuit of the MOSFET/IGBT driver elements includes the first diode, the 9th electric capacity, the tenth electric capacity, current limliting electricity Resistance, buffer resistance, feedback resistance, transistor and optocoupler；6 pin of driving chip connect the anode of the first diode, the one or two pole The negative electrode connection of pipe connects 15V power supplys, the 9th capacitance cathode simultaneously by the colelctor electrode of driving IGBT device, 2 pin of driving chip With one end of feedback resistance, 3 pin of driving chip connect the positive pole of the tenth electric capacity and one end of buffer resistance simultaneously；Buffer resistance Output end of the other end as IGBT driver elements, connect by the gate pole of driving IGBT device；9th electric capacity and the tenth electric capacity Negative pole connect simultaneously by the emitter stage of driving IGBT device and 1 pin of driving chip, the 15 pin connection current limliting electricity of driving chip One end of resistance, the other end connection 15V power supplys of current-limiting resistance, the colelctor electrode of the 14 pin connection transistor of driving chip, transistor Emitter stage be connected with 1 pin of optocoupler, the first buffer chip of the grid of transistor connection microprocessor unit, driving chip 5 pin are connected with 4 pin of optocoupler, the other end of the 3 pin connection feedback resistance of optocoupler, the 2 pins connection microprocessor unit of optocoupler.
- 6. the wide range input converting means grid-connected for distributed power source according to claim 1, its feature exist In：The voltage detection unit includes iron core and signal processing circuit, and a Hall element is provided with wherein at iron core separation mouth, uses In the magnetic flux signal of iron core is converted into electric signal, signal processing circuit includes amplifier chip, the first triode, the two or three pole Pipe, measurement resistance；One end of the input in the same direction connection Hall element of amplifier chip, the inverting input connection of amplifier chip is suddenly The other end of your element, the positive source of amplifier chip connect the colelctor electrode of power supply+VCC and the first triode, amplifier core simultaneously 4 pin of piece connect the emitter stage of power supply-VCC and the second triode simultaneously, and 5 pin of amplifier chip connect the first triode simultaneously The base stage of base stage and the second triode, the emitter stage of the first triode connect one end and the two or three pole of iron core secondary coil simultaneously The colelctor electrode of pipe, the other end of iron core secondary coil is by measuring resistance eutral grounding.
- 7. the wide range input converting means grid-connected for distributed power source according to claim 5, its feature exist In：The scattered current foldback circuit is used to detect the bridge that the IGBT device in composite buffering unit and power converter unit is formed Arm through current, including first voltage comparator, 3rd resistor, the 4th resistance, the 5th resistance and the 6th resistance, the second diode With the 3rd diode and the first adjustable potentiometer；The input in the same direction of the first voltage comparator connects one end of the 4th resistance With the anode of the second diode, the negative electrode of the second diode connects power frequency conversion as the input for disperseing current foldback circuit The colelctor electrode of each IGBT device in unit；One end connection+15V dc sources of 3rd resistor, the other end connect the 4th resistance One fixing end of the other end and the first adjustable potentiometer；Another fixing end ground connection of first adjustable potentiometer, first is adjustable The sliding end of potentiometer is connected with one end of the 5th resistance, and the other end of the 5th resistance connects the reverse defeated of first voltage comparator Enter end；The positive source connection 15V dc sources of first voltage comparator, one end of the 6th resistance, MOSFET/IGBT drivings are single The pin 2 of the driving chip of member；First voltage comparator power cathode ground connection, the signal output part of first voltage comparator with The other end of 6th resistance and the negative electrode of the 3rd diode are connected, and the anode of the 3rd diode is as scattered current foldback circuit Output end, connects the pin 6 of the driving chip of MOSFET/IGBT driver elements, and the signal output part of first voltage comparator connects Connect the second buffer chip of microprocessor unit.
- 8. the wide range input converting means grid-connected for distributed power source according to claim 5, its feature exist In：The concentration current foldback circuit includes Hall current sensor, the 7th resistance, the 8th resistance, the 9th resistance, second adjustable Potentiometer, the 11st electric capacity, the 12nd electric capacity and second voltage comparator；Hall current sensor is installed on the company of tested measuring point In wiring, the signal output part of Hall current sensor is connected with the input in the same direction of second voltage comparator；7th resistance with 12nd electric capacity is in parallel and then one end ground connection, the other end connect the input in the same direction of second voltage comparator；Second adjustable potential One fixing end access 15V power supply of device, another fixing end ground connection, the reverse input end phase of sliding end and second voltage comparator Even；8th resistance one end access 5V power supplys be used as pull-up resistor, the other end connection second voltage comparator signal output part with 9th resistance one end；The other end of 9th resistance is as an output port for concentrating current foldback circuit, with microprocessor list The second buffer chip connection of member, while one end of the 11st electric capacity is connected, the other end ground connection of the 11st electric capacity；9th resistance RC retardation ratio circuit is formed with the 11st electric capacity.
- 9. the wide range input converting means grid-connected for distributed power source according to claim 1, its feature exist In：The power pack of each unit provides by the Switching Power Supply exported with plurality of voltages in the device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849679A (en) * | 2017-03-31 | 2017-06-13 | 沈阳工业大学 | For the grid-connected wide range input converting means of distributed power source and method |
| CN110880859A (en) * | 2018-09-06 | 2020-03-13 | 三菱电机株式会社 | Semiconductor module and power conversion device |
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2017
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849679A (en) * | 2017-03-31 | 2017-06-13 | 沈阳工业大学 | For the grid-connected wide range input converting means of distributed power source and method |
| CN110880859A (en) * | 2018-09-06 | 2020-03-13 | 三菱电机株式会社 | Semiconductor module and power conversion device |
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