CN106849679A - For the grid-connected wide range input converting means of distributed power source and method - Google Patents
For the grid-connected wide range input converting means of distributed power source and method Download PDFInfo
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- CN106849679A CN106849679A CN201710206035.4A CN201710206035A CN106849679A CN 106849679 A CN106849679 A CN 106849679A CN 201710206035 A CN201710206035 A CN 201710206035A CN 106849679 A CN106849679 A CN 106849679A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/38—Arrangements for parallely feeding a single network by two or more generators, converters or transformers
- H02J3/381—Dispersed generators
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides a kind of wide range input converting means grid-connected for distributed power source and method, is related to technical field of electric power system control.Device includes microprocessor unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT driver elements, voltage detection unit, current detecting unit, radio communication unit, LC wave filters and host computer; the current-voltage information collected by microprocessor unit treatment electric current, voltage detection unit; and then drive MOSFET/IGBT driver elements to control the break-make of MOSFET and IGBT device, while the current-voltage information that will be collected is transferred to host computer.The present invention can widen the grid-connected input voltage range of distributed power source, grid-connected power output grade is classified, avoid the influence to distributed generation system due to the voltage pulsation that environment or other factorses are caused, meet to exporting the demand of grid-connected power under varying environment, and with strengthening interactive function.
Description
Technical field
The present invention relates to technical field of electric power system control, more particularly to a kind of wide scope grid-connected for distributed power source
Control source converting means and method.
Background technology
Growing with energy resource consumption, non-renewable fossil fuel is exhausted at last, therefore green clean energy resource is such as
Wind-power electricity generation, photovoltaic generation, fuel cell etc. are developed rapidly.Distributed generation technology has as clean energy resource is grid-connected
Efficacious prescriptions formula, is paid attention to by more and more people.Due to distributed generation system regulative mode and self structure inherent characteristic, utilize
The input energy of the distributed generation system of wind energy, solar energy etc. has natural fluctuation, so, distributed power source output power
Fluctuation is very big, and its output voltage is changed in a scope very wide mostly, and degree of uncertainty is high, easily causes line voltage
Fluctuation causes flickering, and distributed generation system cannot carry out grade separation to power output by related measure, therefore, for
The input voltage range and multiterminal power output grade separation of distributed power source electricity generation system propose requirement higher.Divide at present
What cloth electricity generation system mainly improved that distributed power source input voltage range widens by Boost-Buck step-up/step-down circuits arranges
Apply, when the lifting of power grade is related to, generally require the high element of power grade, Boost-Buck step-up/step-down circuits are intrinsic
The characteristic of device limits the classification of the input voltage range and power grade of distributed generation system.Sent out for distributed power source
Electric system, not only needs the control source of wide scope, it is also desirable to which simple and reliable measure is classified to power grade, to adapt to
To the demand of distributed generation system under varying environment.
The content of the invention
For the defect of prior art, the present invention provides a kind of wide range input grid-connected for distributed power source and becomes
Changing device and method, are directed to the lifting of the grid-connected input voltage range of distributed power source and dividing for grid-connected power output grade
Class, combined with hardware auxiliary circuit, control method and control system hardware configuration can widen the grid-connected voltage of distributed power source defeated
Enter scope, grid-connected power output grade is classified, it is to avoid the voltage pulsation caused due to environment or other factorses is to distribution
The influence of formula electricity generation system, meets to exporting the demand of grid-connected power under varying environment, and with strengthening interactive function.
On the one hand, the present invention provides a kind of wide range input converting means grid-connected for distributed power source, including
Microprocessor unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT drive single
Unit, voltage detection unit, current detecting unit, radio communication unit, LC wave filters and host computer；
Described microprocessor unit is used to process electric current and electricity that current detecting unit and voltage detection unit are collected
Pressure information, and then the break-make of MOSFET/IGBT driver elements control MOSFET and IGBT device is driven, while the electricity that will be collected
Stream information of voltage is transferred to host computer, PC ends recording voltage and current information, the control source grid-connected to widen distributed power source
Scope and power output grade separation provide safeguard；The microprocessor unit includes main control chip, the first buffer chip and the
Two buffer chips；The MOSFET/IGBT driver elements are connected by the first buffer chip with main control chip, the current detecting
Unit and voltage detection unit are connected by the second buffer chip with main control chip, the radio communication unit directly with it is described
Main control chip is connected；
The full-bridge high-frequency array element includes five structure identical full-bridge high-frequency mu balanced circuits, located at two direct current mothers
On line, the input voltage range grid-connected for widening distributed power source；Described full-bridge high-frequency array element includes three inputs
End and an output end, the first input end of described HF array unit are connected by current detecting unit and voltage detection unit
Connect and convert battery as the energy storage of distributed grid-connected power supply, the second input connection of the full-bridge high-frequency array element is described
MOSFET/IGBT driver element output ends, the 3rd input connection microprocessor unit of the full-bridge high-frequency array element
Second output end, the output end of the full-bridge high-frequency array element connects the first input end of composite buffering unit；
The composite buffering protection location includes two structure identical the first composite buffering circuits and the second composite buffering
Circuit, is respectively arranged on two buses I and II, for suppressing during IGBT device break-make peak voltage on bus；It is described compound slow
Rushing protection location includes two inputs and two output ends, the first input end connection high frequency of the composite buffering protection location
The output end of array element, the second input of the composite buffering protection location connects the MOSFET/IGBT driver elements
Output end, the first output end of the composite buffering protection location connects the input of current detecting unit, described compound slow
The second output end for rushing protection location connects the first input end of power converter unit；
The power converter unit is used to for bus bar side DC voltage to be changed into grid side alternating voltage, including 6 structures
Identical subelement, the circuit structure of the circuit structure of each subelement with the described first or second composite buffering circuit is identical；
The MOSFET/IGBT driver elements include driving chip and peripheral protection circuit, for by microprocessor unit
Output signal carries out boosting treatment, and then reaches control MOSFET and voltage needed for IGBT device grid；
The voltage detection unit is used to detect composite buffering protection location, HF array unit first input end and power
The voltage of the tunnel output end of converter unit three, including two groups of circuit structure identical voltage detecting circuits；
The current detecting unit is used to detect whether the electric current of measuring point to be checked in converting means to exceed or fall below default electricity
Stream threshold range, including bridge arm direct pass current detecting unit, bus current detection unit and load current detection unit, the bridge
The detection circuit of the straight-through fault current detection unit of arm is dispersion current foldback circuit, for detecting composite buffering unit and power
Whether the bridge arm direct pass electric current of measuring point to be checked exceedes pre-set current value, the bus current detection unit and load in converter unit
The detection protection circuit of current detecting unit is concentration current foldback circuit, and the bus current detection unit is used to detect straight
Whether the electric current for flowing bus measuring point to be checked exceedes predetermined current threshold scope, and a bus electricity is respectively equipped with two buses
Stream detection unit, the load current detection unit loads measuring point to be checked on connecting line on load connecting line for detecting
Electric current whether exceed predetermined current threshold scope；
The radio communication unit is used to for the signal of microprocessing unit to radio to host computer；
The LC wave filters are used to filter the harmonic wave of power converter unit generation, including three groups of LC filter circuits, described three
The input of group LC filter circuits connects three tunnel output ends of the power converter unit respectively, three groups of LC filter circuits
Output end connects the triple line of power network respectively；
The host computer is mobile phone and computer PC, voltage, electric current and power information for real-time monitoring device, while energy
By the break-make for sending instruction control IGBT device.
Further, the full-bridge high-frequency mu balanced circuit includes high voltage bus filter capacitor, the first MOSFET element, second
MOSFET element, the 3rd MOSFET element, the 4th MOSFET element, high frequency full-bridge boost transformer, first choice derailing switch,
One backward dioded, the second backward dioded, the 3rd backward dioded and the 4th backward dioded；The high voltage bus filtered electrical
The two ends of appearance as the HF array unit first input end, connection as distributed generation system energy storage device, together
When connection voltage detection unit input；The drain electrode of first MOSFET element and the second MOSFET element connects height simultaneously
One end of bus filter capacitor is pressed, the source electrode of first MOSFET element connects the different name of high frequency full-bridge boost transformer simultaneously
The drain electrode of input and the MOSFET elements of tetra-, the source electrode of second MOSFET element connects high frequency full-bridge boost and becomes simultaneously
The source of the drain electrode of the input of the same name and the 3rd MOSFET element of depressor, the 3rd MOSFET element and the 4th MOSFET element
Pole connects the other end of high voltage bus filter capacitor simultaneously；First MOSFET element, the second MOSFET element, the 3rd
The grid of MOSFET element and the 4th MOSFET element connects MOSFET/IGBT as the second input of HF array unit
The output end of driver element；The output end of the same name of the high frequency full-bridge boost transformer connects the moon of the 3rd backward dioded simultaneously
Pole and the anode of the 4th backward dioded, the different name output end connection first choice derailing switch of the high frequency full-bridge boost transformer
First input end；The signal pins 2 of the first choice derailing switch are connected micro- as the 3rd input of HF array unit
Second output end of processor unit；The output end of the first choice derailing switch connects the anode of the first backward dioded simultaneously
With the negative electrode of the second backward dioded；The negative electrode connection of the negative electrode and the 4th backward dioded of the first described backward dioded,
As the first output end of the full-bridge high-frequency mu balanced circuit, the anode of second backward dioded and the 3rd backward dioded
Anode is connected, used as the second output end of the full-bridge high-frequency mu balanced circuit；Five structure identical full-bridge high-frequency mu balanced circuits lead to
Cross the second output end of previous full-bridge high-frequency mu balanced circuit and the first output of adjacent next full-bridge high-frequency mu balanced circuit
The mode that is connected of end is connected, the series connection change-over terminal 1 of the first choice derailing switch of previous full-bridge high-frequency mu balanced circuit with
The output end of the same name connection of next full-bridge high-frequency mu balanced circuit medium-high frequency full-bridge boost transformer；First full-bridge high-frequency voltage stabilizing
First output end of circuit and the 5th the second output end of full-bridge high-frequency mu balanced circuit are collectively as full-bridge high-frequency array element
A pair of output, connect composite buffering unit first input end.
Further, the first composite buffering circuit includes the first IGBT device, first resistor, the 6th electric capacity, first
Inductance, the 21st backward dioded, the 22nd backward dioded；One end of first inductance is used as the composite buffering
The first input end of protection location, connects the output end of full-bridge high-frequency array element, while connecting the 21st backward dioded
Negative electrode, the other end of first inductance connects the colelctor electrode of the first IGBT device, one end of first resistor, the 21st anti-
To the anode and the anode of the 22nd backward dioded of diode, the emitter stage connection the 22nd of first IGBT device
The negative electrode of backward dioded, the other end of first resistor, the positive pole of the 6th electric capacity, the first input end of power converter unit, institute
The negative pole of the 6th electric capacity is stated as the second output end of composite buffering protection location, the emitter stage and work(of the first IGBT device is connected
The first input end of rate converter unit, the gate pole of the first IGBT device connects as the second input of composite buffering protection location
Connect the output end of MOSFET/IGBT driver elements；The colelctor electrode of the first described IGBT device is used as the of composite buffering unit
One output end, connects input, the output end of HF array unit of current detecting unit.
Further, the power converter unit also includes the 8th electric capacity；The gate pole of the IGBT device of each subelement is made
It is the second input of power converter unit, connects the output end of IGBT driver elements；One end of inductance in each subelement point
Not as the input of corresponding subelement；Output of the emitter stage of the IGBT device in each subelement respectively as corresponding subelement
End；The first subelement, the 3rd subelement in 6 structures identical subelement, the input of the 5th subelement are connected to
A bit, as the positive pole of the first input end of power converter unit, the of the first composite buffering circuit that connection is connected with bus I
Two output ends；The second subelement, the 4th subelement, the output end of the 6th subelement in 6 structures identical subelement
It is connected to a bit, as the second composite buffering that the negative pole of the first input end of power converter unit, connection are connected with bus II
Second output end of circuit；8th capacitance connection in the first subelement input and the second subelement output end it
Between；The output end of the first subelement, the 3rd subelement, the 5th subelement in 6 structures identical subelement is right respectively
The second subelement, the 4th subelement, the input of the 6th subelement should be connected, and it is defeated respectively as three tunnels of power converter unit
Go out end.
Further, the peripheral circuit of the MOSFET/IGBT driver elements includes the first diode, the 9th electric capacity, the
Ten electric capacity, current-limiting resistance, buffer resistance, feedback resistance, transistor and optocoupler；6 pin of driving chip connect the first diode
Anode, the negative electrode of the first diode is connected by the drain electrode of the colelctor electrode of driving IGBT device and MOSFET element, the 2 of driving chip
Pin connects one end of 15V power supplys, the 9th capacitance cathode and feedback resistance simultaneously, and 3 pin of driving chip connect the tenth electric capacity simultaneously
Positive pole and buffer resistance one end；The other end of buffer resistance is connected and driven as the output end of IGBT driver elements
The gate pole of IGBT device and the grid of MOSFET element；The negative pole of the 9th electric capacity and the tenth electric capacity is connected and is driven IGBT devices simultaneously
1 pin of the emitter stage of part, the source electrode of MOSFET element and driving chip, 15 pin of driving chip connect one end of current-limiting resistance,
The other end connection 15V power supplys of current-limiting resistance, 14 pin of driving chip connect the colelctor electrode of transistor, the emitter stage of transistor with
1 pin of optocoupler is connected, and the grid of transistor connects the first buffer chip of microprocessor unit, 5 pin and optocoupler of driving chip
4 pin be connected, 3 pin of optocoupler connect the other end of feedback resistance, the 2 pins connection microprocessor unit of optocoupler.
Further, the voltage detection unit includes iron core and signal processing circuit, and wherein iron core separates and is provided with mouth
One Hall element, for the magnetic flux signal of iron core to be converted into electric signal, signal processing circuit includes amplifier chip, the one or three
Pole pipe, the second triode, measurement resistance；The input in the same direction of amplifier chip connects one end of Hall element, amplifier chip it is anti-
Phase input connects the other end of Hall element, and the positive source of amplifier chip connects power supply+VCC and the first triode simultaneously
Colelctor electrode, 4 pin of amplifier chip connect the emitter stage of power supply-VCC and the second triode simultaneously, and 5 pin of amplifier chip connect simultaneously
The base stage of the first triode and the base stage of the second triode are connect, the emitter stage of the first triode connects iron core secondary coil simultaneously
One end and the colelctor electrode of the second triode, the other end of iron core secondary coil is by measuring resistance eutral grounding.
Further, during the dispersion current foldback circuit is used to detect composite buffering unit and power converter unit
The bridge arm direct pass electric current that IGBT device is constituted, including first voltage comparator, 3rd resistor, the 4th resistance, the 5th resistance and the
Six resistance, the second diode and the 3rd diode and the first adjustable potentiometer；The input in the same direction of the first voltage comparator
One end of the 4th resistance and the anode of the second diode are connected, the negative electrode of the second diode is used as the defeated of dispersion current foldback circuit
Enter end, the colelctor electrode of each IGBT device in connection power converter unit；One end connection+15V dc sources of 3rd resistor, it is another
The other end of the 4th resistance of end connection and a fixing end of the first adjustable potentiometer；Another of first adjustable potentiometer is fixed
End ground connection, the sliding end of the first adjustable potentiometer is connected with one end of the 5th resistance, the electricity of other end connection first of the 5th resistance
Press the reverse input end of comparator；The positive source connection 15V dc sources of first voltage comparator, one end of the 6th resistance,
The pin 2 of the driving chip of MOSFET/IGBT driver elements；The power cathode ground connection of first voltage comparator, first voltage ratio
Signal output part compared with device is connected with the other end of the 6th resistance and the negative electrode of the 3rd diode, the anode conduct of the 3rd diode
Disperse the output end of current foldback circuit, connect the pin 6 of the driving chip of MOSFET/IGBT driver elements, first voltage ratio
Signal output part compared with device connects the second buffer chip of microprocessor unit.
Further, the concentration current foldback circuit includes Hall current sensor, the 7th resistance, the 8th resistance, the
Nine resistance, the second adjustable potentiometer, the 11st electric capacity, the 12nd electric capacity and second voltage comparator；Hall current sensor is pacified
On connecting line loaded on tested measuring point, the signal output part of Hall current sensor and the input in the same direction of second voltage comparator
It is connected；7th resistance is in parallel with the 12nd electric capacity and then one end is grounded, and the other end connects the input in the same direction of second voltage comparator
End, carries out signal filtering；Second fixing end of adjustable potentiometer one access 15V power supplys, another fixing end ground connection, sliding end with
The reverse input end of second voltage comparator is connected, there is provided feedback voltage；5V power supplys are accessed as pull-up electricity in 8th resistance one end
Resistance, the signal output part of other end connection second voltage comparator and the 9th resistance one end；The other end of the 9th resistance is used as collection
One output port of middle current foldback circuit, is connected with the second buffer chip of microprocessor unit, while connection the 11st
One end of electric capacity, the other end ground connection of the 11st electric capacity；9th resistance and the 11st electric capacity constitute RC retardation ratio circuit.
Further, in the described wide range input converting means grid-connected for distributed power source each unit confession
The Switching Power Supply that electric part exports (output ± 15V, 5V, 3.3V voltage) by with plurality of voltages is provided.
On the other hand, the present invention also provides a kind of side of the wide range input conversion grid-connected for distributed power source
Method, the method is realized by for the grid-connected wide range input converting means of distributed power source, comprised the following steps：
Step 1, using microprocessor unit control full-bridge high-frequency array element, composite buffering protection location, power frequency conversion
The inner member of unit and MOSFET/IGBT driver elements, makes whole control source converting means be in running status, specific side
Method is：
Step 1.1, SPWM (i.e. sinusoidal pulse width modulation) signal is sent using microprocessor unit；
Step 1.2, boosting treatment is carried out by MOSFET/IGBT driver elements, SPWM voltage signal magnitudes are raised to
15V；
Step 1.3, MOSFET element, composite buffering unit and power frequency conversion list that full-bridge high-frequency array element is driven respectively
The IGBT device of unit, makes each MOSFET and IGBT device alternate conduction, is used in the grid-connected wide-range voltage of distributed power source defeated
Enter converting means and be in normal operating condition；
Step 2, the data acquisition and the record that carry out electric current and voltage, specific method is：
Step 2.1, while using the dispersion current foldback circuit in voltage detection unit, current detecting unit, concentrating
Stream protection circuit to the voltage of full-bridge high-frequency array element front end, the electric current of composite buffering protection location and power converter unit and
Voltage carries out Real-time Collection；
Voltage detection unit produces signal all the way, gives microprocessor unit, is preset more than first when fluctuation occurs in voltage
During input voltage range, promote the change of MOSFET element dutycycle, change the output voltage of full-bridge high-frequency array element, it is to avoid
Due to the influence of the fluctuation to output voltage of input voltage；
The level signal for concentrating current foldback circuit generation in bus current detection unit and load current detection unit
The driving chip and microprocessor unit of MOSFET/IGBT driver elements are given by the delay of RC retardation ratio circuit；
Each road electric current of step 2.2, microprocessor unit acquisition and recording and voltage data, build in real time terminal voltage to be detected with
The graph of relation of detection branch；
Whether step 3, microprocessor unit judge current value more than the first predetermined current threshold, and the voltage at end to be detected is
It is no that input voltage range is preset more than first, if the first predetermined current threshold and first presets any one in input voltage range
It is exceeded or both while exceed, then illustrates that system breaks down, failure judgement classification is voltage failure or current failure, is performed
Step 4, otherwise system are working properly, return and perform step 2；
Step 4, when there is voltage failure, microprocessor unit produce control signal simultaneously be sent to full-bridge high-frequency array list
First corresponding MOSFET element, according to voltage change range, linear regulation drives MOSFET element signal dutyfactor, adaptively changing
The output voltage of full-bridge high-frequency array element；When there is current failure, microprocessor unit produces control signal and sends extremely
In the corresponding units of failure, the IGBT device of the unit to breaking down carries out slow drop grid voltage；Microprocessor unit is simultaneously
The position of fault current is recorded, corresponding numbering is produced, failure logging is sent into short message to mobile phone by radio communication unit,
The fault message that report microprocessor unit is judged, intermediate alarm signal of being concurrently out of order, by failed transmission on computer PC
Position machine；Computer PC host computers are contrasted the failure stored in existing failure and computer data, determine fault current
Type and position；
Step 5, microprocessor further differentiate to fault current voltage detecting, judges whether current value is default more than second
Current threshold, whether terminal voltage to be detected is more than the second predetermined voltage threshold scope, wherein the second predetermined current threshold is more than the
One predetermined current threshold, the end value of the end value more than the first default input voltage range of the second default input voltage range, if the
Any one is exceeded or both while being exceeded, then it is right to assert in two predetermined current thresholds and the second default input voltage range
Answer position that serious under-voltage, short-circuit or over current fault occurs, perform step 6, otherwise return to step 2；
Step 6, microprocessor unit send control signal, block input signal, and shut-off occurs serious under-voltage, short-circuit or mistake
The MOSFET or IGBT device in the unit of failure are flowed, fault message is continuously sent into short message by radio communication unit
To user mobile phone, while microprocessor unit produces failure Critical alerts signal, computer PC host computers are given by failed transmission.
As shown from the above technical solution, the beneficial effects of the present invention are：One kind that the present invention is provided is used for distributed electrical
The grid-connected wide range input converting means in source and method, are directed to carrying for the grid-connected input voltage range of distributed power source
Rise the classification with grid-connected power output grade.First distributed power source dc bus add full-bridge high-frequency array element, when point
Cloth power input voltage occur fluctuation when, can Automatic adjusument regulated output voltage, while can also according to user terminal demand,
Power output grade is classified；Next adds composite buffering unit, when bus IGBT device is switched on or off, can
It is preferential to suppress to reduce the surge voltage amplitude on bus；Current Voltage detection unit is it is possible to additionally incorporate, respectively to IGBT bridge arm direct pass
Electric current, bus bar side voltage x current, load side voltage electric current are monitored, and correlated current voltage data are recorded, by computer PC
Position machine is analyzed to data, sets up the relation curve of voltage x current and power three, is wide scope pressure regulation and power grade
Classification provides foundation；Positioning is monitored to the over current fault position of power converter unit finally by current detecting unit, is led to
Cross hardware-assist circuit and the slow drop grid voltage of microprocessor unit, over reach circuit failure protection time, using wireless telecommunications list
Unit is communicated with mobile phone and computer, realizes data sharing between mobile phone and computer, strengthens human-computer dialogue, it is to avoid it is changed device
Stream device, DC line and system cause secondary damage.Present invention incorporates hardware-assist circuit, control method and control system
Hardware configuration, can widen the grid-connected input voltage range of distributed power source, and grid-connected power output grade is classified, it is to avoid
Influence of the voltage pulsation caused due to environment or other factorses to distributed generation system, is met under varying environment to output simultaneously
The demand of net power, and with the interactive function of enhancing.
Brief description of the drawings
Fig. 1 is a kind of wide range input converting means grid-connected for distributed power source provided in an embodiment of the present invention
Structural representation；
Fig. 2 is the circuit theory diagrams of microprocessor unit provided in an embodiment of the present invention；
Fig. 3 is the circuit theory diagrams of full-bridge high-frequency array element provided in an embodiment of the present invention；
Fig. 4 is the circuit theory diagrams of composite buffering circuit provided in an embodiment of the present invention；
Fig. 5 is the circuit theory diagrams of power converter unit provided in an embodiment of the present invention；
Fig. 6 is distributed power source provided in an embodiment of the present invention, energy storage and conversion, full-bridge high-frequency array element, is combined and delays
Rush the connection circuit theory diagrams of unit, power converter unit and LC wave filters；
Fig. 7 is the circuit theory diagrams of MOSFET/IGBT driver elements provided in an embodiment of the present invention；
Fig. 8 is the circuit theory diagrams of voltage detection unit provided in an embodiment of the present invention；
Fig. 9 is the operation principle schematic diagram of dispersion current foldback circuit provided in an embodiment of the present invention；
Figure 10 is the schematic diagram of the dispersion current foldback circuit of access IGBT driving chips provided in an embodiment of the present invention；
Figure 11 is the circuit of the concentration current foldback circuit on distributed power source dc bus provided in an embodiment of the present invention
Schematic diagram；
Figure 12 is the side of the wide range input conversion grid-connected suitable for distributed power source provided in an embodiment of the present invention
Method flow chart；
Figure 13 is that composite buffering unit IGBT provided in an embodiment of the present invention turns off moment circuit theory diagrams；
Figure 14 opens moment circuit theory diagrams for composite buffering unit IGBT provided in an embodiment of the present invention；
Figure 15 is bent for installation wide range input converting means three-phase current effective value provided in an embodiment of the present invention
Line chart；
Figure 16 is three-phase current virtual value song after installation wide range input converting means provided in an embodiment of the present invention
Line chart.
In figure：1st, distributed power source；2nd, energy storage and converting means；3rd, full-bridge high-frequency array element；4th, composite buffering unit；
5th, power converter unit；6th, LC wave filters；7th, power network；8th, iron core；9th, Hall element.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the invention is described in further detail.Hereinafter implement
Example is not limited to the scope of the present invention for illustrating the present invention.
As shown in figure 1, a kind of wide range input converting means grid-connected for distributed power source, the device includes micro-
Processor unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT drive single
Unit, voltage detection unit, current detecting unit, radio communication unit, LC wave filters and host computer.In the present embodiment, channel radio
News unit uses SIM808 wireless modules, and for the signal of microprocessing unit to be radioed into host computer, IGBT device is used
The IGBT module of model FZ1000R20KS4, MOSFET/IGBT driver elements use EXB841 IGBT integrated drives, on
Position machine is mobile phone and computer PC, voltage, current information for real-time monitoring device, while can be by sending instruction control
IGBT break-makes.The power pack of each unit is exported (output ± 15V, 5V, 3.3V voltage) by with plurality of voltages in device
Switching Power Supply is provided.
Microprocessor unit is used to process the voltage and current information that voltage detection unit and current detecting unit are collected,
And then drive IGBT driver elements to control the break-make of IGBT device, it is full-bridge high-frequency while information transfer will be gathered to host computer
Array boosting voltage stabilizing provides foundation.In the present embodiment, microprocessor unit includes TMS320F28335 main control chips, first
Buffer chip 74HC245 and the second buffer chip 743384, the inspection of MOSFET/IGBT driver elements, current detecting unit and voltage
Survey unit to be connected with main control chip by buffer chip, radio communication unit is directly connected with main control chip.
TMS320F28335 main control chips are a dominant frequency up to processor of 150MHZ, the pulsewidth modulation end with 12 road mutual symmetries
Mouth PWM1-12,12 ADC converters of built-in 2*8 passages, the SCI communication interfaces with 3 passages.
By taking one group of detection unit as an example, as shown in Fig. 2 microprocessor unit and the specific attachment structure of other peripheral cells
For：The pulsewidth modulation port PWM1 of main control chip, PWM2, PWM3, PWM4, PWM5, PWM6, PWM7, PWM8, PWM9, PWM10,
PWM11, PWM12 A0 respectively with the first buffer chip 74HC245, A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11,
A12 mouthfuls connects one to one, and the B0 and B1 of the first buffer chip 74HC245 connect the S3 and S4 of MOSFET/IGBT driver elements
Mouthful, IN1 and IN2 mouthful of B6 and B12 the connection MOSFET/IGBT driver elements of 74HC245 buffer chips, TMS320F28335 master
ADCINA0, ADCINA7 mouthful of A0 and A1 port respectively with the second buffer chip 743384 for controlling chip is connected,
D0 and D18 mouthful of TMS320F28335 main control chips connects A8 the and A15 ports of the second buffer chip 743384 respectively, and second delays
The B0 and B7 for rushing chip 743384 are connected with OC1 the and OC2 ports of current detecting unit respectively, the second buffer chip 743384
B8 and B15 are connected with two output ports S1 and S2 of voltage detection unit respectively；Radio communication unit SIM808 modules
SCITXD mouthfuls is connected with SCIRXD mouthfuls of TMS320F28335 main control chips, SCIRXD mouthfuls of radio communication unit SIM808 modules
SCITXD mouthfuls with TMS320F28335 main control chips is connected.
Full-bridge high-frequency array element includes five structure identical full-bridge high-frequency booster circuits, on two buses, uses
In the input voltage range grid-connected for widening distributed power source, full-bridge high-frequency array element is defeated including three inputs and one
Go out end, the first input end of full-bridge high-frequency array element is connected by electric current and voltage detection unit is used as distributed grid-connected power supply
Energy storage conversion battery, HF array unit the second input connection MOSFET/IGBT driver element output ends, HF array
3rd input of unit connects the second output end of microprocessor, the output end connection composite buffering unit of HF array unit
First input end.
Five full-bridge high-frequency boost circuit structures on two buses are identical, are with first full-bridge high-frequency booster circuit
Example, as shown in figure 3, including high voltage bus filter capacitor C1, four with high frequency cut-off MOSFET element Q1, Q2 of function, Q3,
Q4, high frequency full-bridge boost transformer TR1, selecting switch device K1, backward dioded VD1, VD2, VD3 and a VD4.High voltage bus
The two ends of filter capacitor C1 are connected as the energy storage device of distributed generation system as the first input end of HF array unit
(being then only connected on two buses), while connecting the input of voltage detection unit.First MOSFET element Q1 and second
The drain electrode of MOSFET element Q2 connects one end of high voltage bus filter capacitor C1 simultaneously, and the source electrode of the first MOSFET element Q1 is simultaneously
Connect the drain electrode of the different name input and the 4th MOSFET element of high frequency full-bridge boost transformer, the source of the second MOSFET element Q2
Pole connects the drain electrode of the input of the same name and the 3rd MOSFET element Q3 of high frequency full-bridge boost transformer, the 3rd MOSFET devices simultaneously
The source electrode of part Q3 and the 4th MOSFET element Q4 connects the other end of high voltage bus filter capacitor C1 simultaneously.First MOSFET element
Q1, the second MOSFET element Q2, the grid of the 3rd MOSFET element Q3 and the 4th MOSFET element Q4 are used as HF array unit
The second input, connect MOSFET/IGBT driver elements output end.The output end of the same name of high-frequency step-up transformer connects simultaneously
Connect the negative electrode of the 3rd backward dioded VD3 and the anode of the 4th backward dioded VD4, the different name output end of high-frequency step-up transformer
The first input end of connection selecting switch device K1, the signal pins 2 of selecting switch device K1 are the 3rd defeated as HF array unit
Enter end, connect the second output end of microprocessor unit, the output end of selecting switch device K1 connects the first backward dioded simultaneously
The negative electrode of the anode of VD1 and the second backward dioded VD2, the negative electrode of the first backward dioded VD1 and the 4th backward dioded VD4
As the first output end of the full-bridge high-frequency mu balanced circuit, the anode and the 3rd backward dioded VD3 of the second backward dioded VD2
Anode connection, as the second output end of the full-bridge high-frequency mu balanced circuit.Five structure identical full-bridge high-frequency mu balanced circuits
The second output end by previous full-bridge high-frequency mu balanced circuit is defeated with the first of adjacent next full-bridge high-frequency mu balanced circuit
Go out the mode that is connected of end to be connected, i.e., first the second output end of full-bridge high-frequency mu balanced circuit and second full-bridge high-frequency
First output end of mu balanced circuit is connected, second the second output end of full-bridge high-frequency mu balanced circuit and the 3rd full-bridge high-frequency
First output end of mu balanced circuit is connected, by that analogy, finally, first the first output end of full-bridge high-frequency mu balanced circuit and
, collectively as a pair of output of full-bridge high-frequency array element, connection is again for 5th the second output end of full-bridge high-frequency mu balanced circuit
Close the first input end of buffer cell；Then, the series connection switching of the first choice derailing switch of previous full-bridge high-frequency mu balanced circuit
End 1 is connected with the output end of the same name of next full-bridge high-frequency mu balanced circuit medium-high frequency full-bridge boost transformer.
Composite buffering protection location includes two structure identical composite buffering circuits, is respectively arranged on two buses I and II
On, for suppressing during IGBT break-makes peak voltage on bus.Composite buffering protection location includes two inputs and two outputs
End, the first input end of composite buffering protection location connects the output end of HF array unit, and the of composite buffering protection location
Two inputs connect MOSFET/IGBT driver element output ends, the first output end connection electric current inspection of composite buffering protection location
The input of unit is surveyed, the second output end of composite buffering protection location connects the first input end of power converter unit.
Composite buffering circuit structure identical the first composite buffering circuit and the second composite buffering circuit on two buses,
By taking the first composite buffering circuit on bus I as an example, as shown in figure 4, including a high frequency cut-off function IGBT device VT1,
Resistance R1, the 6th electric capacity C6, inductance L1, the 21st backward dioded VD21 and the 22nd backward dioded VD22, specifically
Attachment structure is：One end of inductance L1 as the composite buffering circuit input, i.e. the first of composite buffering protection location be defeated
Enter end, connect the output end of HF array unit, while connecting the negative electrode of the 21st backward dioded VD21, inductance L1's is another
One end connects colelctor electrode, one end of resistance R1, the anode and the 20th of the 21st backward dioded VD21 of IGBT device VT1
The anode of two backward dioded VD22, the emitter stage of IGBT device VT1 connects negative electrode, the electricity of the 22nd backward dioded VD22
The first input end of the other end, the positive pole of electric capacity C6 and power converter unit of R1 is hindered, the negative pole of electric capacity C6 is used as composite buffering
Second output end of protection location, the emitter stage of connection IGBT device VT1 and the first input end of power converter unit；IGBT devices
The gate pole of part VT1 connects the output end of MOSFET/IGBT driver elements as the second input of composite buffering protection location.
The colelctor electrode of IGBT device VT1 connects input, the high frequency of current detecting unit as the first output end of composite buffering unit
The output end of array element；The emitter stage of IGBT device VT1 connects power frequency conversion as the second output end of composite buffering unit
The first input end of unit.
Power converter unit is used to for bus bar side DC voltage to be changed into grid side alternating voltage, as shown in figure 5, including filter
Ripple Support Capacitor C8 and 6 structure identical subelements, the circuit structure of each subelement are electric with the first or second composite buffering
The circuit structure on road is identical.IGBT device VT3 and its peripheral circuit as power converter unit the first subelement, IGBT device
VT4 and its peripheral circuit as power converter unit the second subelement, IGBT device VT5 and its peripheral circuit become as power
3rd subelement of frequency unit, IGBT device VT6 and its peripheral circuit as power converter unit the 4th subelement, IGBT devices
Part VT7 and its peripheral circuit as power converter unit the 5th subelement, IGBT device VT8 and its peripheral circuit are used as power
6th subelement of converter unit.By taking the first subelement as an example, including high frequency cut-offs IGBT device VT3, the resistance of function
R3, electric capacity C9, inductance L3, backward dioded VD24, backward dioded VD25；One end of inductance L3 connects backward dioded VD24
Negative electrode, colelctor electrode, one end of resistance R3, the sun of backward dioded VD24 of the other end connection IGBT device VT3 of inductance L3
Pole and the anode of backward dioded VD25, the negative electrode of the emitter stage connection backward dioded VD25 of IGBT device VT3, resistance R3
The positive pole of the other end, electric capacity C9, the emitter stage of the negative pole connection IGBT device VT3 of electric capacity C9, the gate pole conduct of IGBT device VT3
Second input of power converter unit, connects IGBT the first output ends of driver element.Inductance L3, L4, L5 in each subelement,
One end that L6, L7, L8 are connected to backward dioded negative electrode respectively as corresponding subelement input, the IGBT in each subelement
Output end of the emitter stage of device VT3, VT4, VT5, VT6, VT7, VT8 respectively as corresponding subelement.Power converter unit
First subelement, the 3rd subelement, the input of the 5th subelement are connected to a bit, used as the first input of power converter unit
The positive pole at end, while the second output end of the first composite buffering circuit that connection is connected with bus I, the second subelement, the 4th son
Unit, the output end of the 6th subelement are connected to a bit, as the negative pole of the first input end of power converter unit, while connection
Second output end of the second composite buffering circuit being connected with bus II.Electric capacity C8 is connected to the input and second of the first subelement
Between the output end of subelement.First subelement of power converter unit, the 3rd subelement, the output end difference of the 5th subelement
The second subelement of correspondence connection power converter unit, the 4th subelement, the input of the 6th subelement, and become respectively as power
Three tunnel output ends of frequency unit.
The connection of distributed power source, full-bridge high-frequency array element, composite buffering unit, power converter unit and LC wave filters
Circuit is as shown in Figure 6.
MOSFET/IGBT driver elements are used to for microprocessor unit output signal to carry out boosting treatment, and then reach control
MOSFET processed and voltage needed for IGBT device grid, including EXB841 driving chips and peripheral protection circuit, as shown in fig. 7, its
Middle peripheral circuit include ERA34-10 diodes D1, electric capacity C10, C11, current-limiting resistance Re, buffer resistance RG, feedback resistance Rf,
Transistor TCR and TLP251 optocoupler.Each IGBT driver element drives one group of half-bridge being made up of two IGBT.To drive one
As a example by individual IGBT circuits, the anode of the 6 pin connection ERA34-10 diodes D1 of driving chip EXB841, ERA34-10 diodes D1
Negative electrode connection by the colelctor electrode of driving IGBT device, 2 pin of driving chip EXB841 are connecting 15V power supplys, electric capacity C10 just simultaneously
Pole and one end of feedback resistance Rf, the positive pole of electric capacity C11 is while one end of 3 pin, buffer resistance RG with driving chip EXB841
It is connected；The other end of buffer resistance RG is connected by the gate pole of driving IGBT device, electric capacity as the output end of IGBT driver elements
The negative pole of C10 and electric capacity C11 is connected and is driven the emitter stage of IGBT and 1 pin of driving chip EXB841, driving chip simultaneously
One end of the 15 pin connection current-limiting resistance Re of EXB841, the other end connection 15V power supplys of current-limiting resistance Re, driving chip EXB841
14 pin connection transistor TCR colelctor electrode, the emitter stage of transistor TCR is connected with 1 pin of TLP251 optocouplers, transistor TCR
Grid as input IN1 and the microprocessor unit of IGBT driver elements connection microprocessor control signals the first buffering
The B6 ends connection of chip 74HC245；5 pin of driving chip EXB841 are connected with 4 pin of TLP251 optocouplers, and the 3 of TLP251 optocouplers
The other end of pin connection feedback resistance Rf, 2 pins of TLP251 optocouplers delay as the first of S3 ports connection microprocessor unit
Rush the B0 ports of chip 74HC245.The gate pole of all IGBT devices in composite buffering unit and power converter unit with
The output end of IGBT driver elements is connected.
Voltage detection unit is used to detect the first input end and work(of composite buffering protection location, full-bridge high-frequency array element
The voltage of the tunnel output end of rate converter unit three, including two groups of circuit structure identical voltage detecting circuits.
By taking one group of voltage detection unit circuit as an example, as shown in figure 8, including an iron core and signal processing circuit, wherein
Iron core separated place is provided with a Hall element, and effect is that iron core magnetic messenger is converted into electric signal, and signal processing circuit includes
One amplifier U0, two triodes Qs1, Qs2 and a measurement resistance RM, wherein amplifier model LM358 models, specific connection
Structure is：The input in the same direction (pin 1) and reverse input end (pin 2) of amplifier U0 are connected with the two ends of Hall element respectively,
The pin 3 of amplifier U0 as voltage detection unit first input end, while with+15V power supplys and the colelctor electrode phase of triode Qs1
Even, the pin 4 of amplifier U0 as voltage detection unit the second input, while connecting the hair of -15V power supplys and triode Qs2
Emitter-base bandgap grading, 5 pin of amplifier chip connect the base stage of the first triode and the base stage of the second triode, the transmitting of triode Qs1 simultaneously
Pole is connected with the colelctor electrode of triode Qs2 and one end of iron core secondary coil simultaneously, and the other end connection of iron core secondary coil is surveyed
One end of amount resistance RM, the other end ground connection of measurement resistance RM, the input of iron core primary coil is used as voltage detection unit
3rd input, connects the first input end of HF array unit, and one end S1 of measurement resistance RM is used as voltage detection unit
Output end.Two resistance of primary coil side refer to accessing the internal resistance of wire in Fig. 8, are virtual equivalence values, do not have in circuit
It is of practical significance, left end connection is the voltage for being input into end to be detected.
Whether the electric current that current detecting unit is used for measuring point to be checked in detection means exceeds or falls below predetermined current threshold model
Enclose, including bridge arm direct pass current detecting unit, bus current detection unit and load current detection unit.Bridge arm direct pass electric current is examined
Survey unit detection circuit for dispersion current foldback circuit, for detecting composite buffering unit and power converter unit in it is to be detected
Whether the bridge arm direct pass electric current that point IGBT device is constituted exceedes pre-set current value, for detecting composite buffering unit and power frequency conversion
Dispersion current foldback circuit structure in unit is identical.The detection circuit of bus current detection unit and load current detection unit
Concentration current foldback circuit is, whether bus current detection unit is used to detect the electric current of measuring point to be checked on bus more than default
Current value, and a bus current detection unit is respectively equipped with two buses, load current detection unit is used to detect negative
Whether the electric current for carrying measuring point to be checked on connecting line exceedes pre-set current value.The test position of bridge arm direct pass fault current detection unit
As in Fig. 5 or 6 3. and 4., in the test position such as Fig. 5 of bus current detection unit or 6 1. and 2., load current detection
In the test position such as Fig. 5 of unit or 6 5..
Disperse the operation principle of current foldback circuit as shown in figure 9, Vref is used as the setting threshold for disperseing current foldback circuit
Threshold voltage, when the voltage that comparator detects at 0 point is more than the threshold voltage of setting, comparator output high level passes through and door
AND exports high level signal to microprocessing unit, and then sends pulse control signal, controls IGBT break-makes, prevents device to be subjected to
Secondary damage.
By taking the dispersion current foldback circuit located at the measuring point to be checked of power converter unit as an example, Figure 10 is provided for the present embodiment
Access IGBT driving chips dispersion current foldback circuit fundamental diagram, disperse current foldback circuit concrete structure include
Voltage comparator U1, resistance R9, R10, R11 and R12, Schottky diode D2 and D3, blue white adjustable potentiometer RP1 (are used for adjusting
Section setting voltage threshold value).One end of the input in the same direction connection resistance R10 of LM339 voltage comparators U1 and Schottky diode
The anode of D2, the negative electrode of Schottky diode D2 connects power converter unit IGBT as the input of dispersion current foldback circuit
The colelctor electrode of device VT3；Resistance R9 one termination+15V dc sources, the other end of another terminating resistor R10 of resistance R9 and
One fixing end of adjustable potentiometer RP1；Another fixing end ground connection of adjustable potentiometer RP1, the slip of adjustable potentiometer RP1
End is connected with one end of resistance R11, the reverse input end of the other end connection voltage comparator U1 of resistance R11；The one of resistance R12
End connection 15V dc sources, and positive source, the driving of MOSFET/IGBT driver elements of connection voltage comparator U1 simultaneously
The pin 2 of chip EXB841 and one end of decoupling capacitor C12, decoupling capacitor C12 are added after accessing dispersion current foldback circuit
Decoupling capacitor, changes a kind of understanding mode, is exactly between the positive pole (pin 1) and power cathode (GND) of LM339 power supplys, to add
One decoupling capacitor C12；The pin of power cathode 14 ground connection of voltage comparator U1, the signal output part of LM339 voltage comparators U1
It is connected with the other end of resistance R12 and the negative electrode of Schottky diode D3, the anode of Schottky diode D3 is used as dispersion excessively stream
The output end of protection circuit, connects the pin 6 of the driving chip of MOSFET/IGBT driver elements, the signal of voltage comparator U1
Output end OUT is ADOC1 mouthful that current detecting unit is connected with the second buffer chip of microprocessor unit.Resistance R9 is white with indigo plant
Adjustable potentiometer RP1 connects, and by adjustable potentiometer RP1, feedback voltage is provided to LM339 voltage comparators U1 through resistance R11
The input in the same direction of Vref, LM339 voltage comparator U1 is acquired by diode D2 to the collector voltage of IGBT device,
It is compared by the value with default Vref, and then differentiates whether the bridge arm of IGBT device occurs over current fault.
In a distributed manner as a example by the concentration current foldback circuit on power DC bus, as shown in figure 11, overcurrent protection is concentrated
The concrete structure of circuit is by taking bus I as an example, including Hall current sensor H1, resistance R13, R14, R15, blue white adjustable potentiometer
RP2, electric capacity C14, C15 and LM339 voltage comparator U2, wherein, Hall current sensor H1 is using HINODE companies of Japan
Direct measuring type hall effect current sensor HAP8-200/4, the sensor needs positive and negative 15V dual power supplies to be powered.Circuit is specific
Attachment structure be：The signal output part of Hall current sensor H1 and the input (pin in the same direction of LM339 voltage comparators U2
3) it is connected；Resistance R13 latter end ground connection in parallel with electric capacity C15, the input in the same direction of other end connection LM339 voltage comparators U2
(pin 3), carries out signal filtering；Mono- fixing end of adjustable potentiometer RP2 accesses 15V power supplys, and another fixing end ground connection is slided
End is connected with the reverse input end pin 2 of LM339 voltage comparators U2, there is provided feedback voltage；Access 5V power supplys in resistance R14 one end
Used as pull-up resistor, the other end connects signal output part (pin 1) and resistance R15 one end of LM339 voltage comparators U2, is used for
The current driving ability of LM339 voltage comparator U2 signal output parts is improved, the other end of resistance R15 is used as concentration overcurrent protection
One output port OC1 of circuit, i.e., the ADOC2 that current detecting unit is connected with the second buffer chip of microprocessor unit
Mouthful, while connecting one end of electric capacity C14, the other end ground connection of electric capacity C14, resistance R15 and electric capacity C14 constitutes RC retardation ratio circuit.
The buffered resistance R15 outputs level signals OC1 of LM339 voltage comparator U2 signal output part (pin 1) signals to microprocessor,
Current data is recorded, when seriously exceeding threshold value, the drive signal of all IGBT, also, resistance R15 and electric capacity is blocked
The delay circuit of C14 compositions is the interference protection measure to prevent lockout circuit misoperation from taking.Another bus is provided with identical
The concentration current foldback circuit of structure, its output port is OC2.
LC wave filters are used to filter the harmonic wave of power converter unit generation, including three groups of LC filter circuits, three groups of LC filtering
The input of circuit connects three tunnel output ends of power converter unit respectively, and the output end of three groups of LC filter circuits connects electricity respectively
The triple line of net.
The one kind realized by the grid-connected wide range input converting means of above-mentioned distributed power source is used for distribution
The method of the wide range input conversion of power grid, as shown in figure 12, specifically includes following steps：
Step 1, using microprocessor unit control full-bridge high-frequency array element, composite buffering protection location, power frequency conversion
The inner member of unit and MOSFET/IGBT driver elements, makes whole control source converting means be in running status, specific side
Method is：
Step 1.1, SPWM (sinusoidal pulse width modulation) signal is sent using microprocessor unit；
Step 1.2, boosting treatment is carried out by MOSFET/IGBT driver elements, SPWM voltage signal magnitudes are raised to
15V；
Step 1.3, respectively driving full-bridge high-frequency 20 MOSFET elements of array element, two of IGBT composite buffering units
6 IGBT devices of IGBT device and power converter unit, make each MOSFET and IGBT device alternate conduction, are used in distributed electrical
The grid-connected wide range input converting means in source is in normal operating condition；
Step 2, while using the dispersion overcurrent protection in measurement resistance RM, the current detecting unit in voltage detection unit
Circuit, current foldback circuit is concentrated to the voltage of full-bridge high-frequency array element front end, composite buffering protection location and power frequency conversion
The electric current and voltage of unit carry out Real-time Collection；
Voltage detection unit produces signal all the way, gives microprocessor unit, is preset more than first when fluctuation occurs in voltage
During input voltage range, promote the change of MOSFET element dutycycle, change the output voltage of full-bridge high-frequency array element, it is to avoid
Due to the influence of the fluctuation to output voltage of input voltage；
The level signal for concentrating current foldback circuit generation in bus current detection unit and load current detection unit
The EXB841 driving chips and microprocessor unit of MOSFET/IGBT driver elements are given by the delay of RC retardation ratio circuit
ADCINAO-A7 mouthfuls；
Each road electric current of microprocessor unit acquisition and recording and voltage data, build terminal voltage to be detected and detection branch in real time
Graph of relation；
The position of step 3, microprocessor unit failure judgement electric current, judges that whether current value, more than 1.2 times of setting values, is treated
Whether test side input voltage is more than 48-198V, if wherein any one exceedes or both and to exceed simultaneously, illustrate to occur former
Barrier, corresponding unit is trouble unit, performs step 4, otherwise illustrates that system is working properly, returns and performs step 2, proceeds inspection
Survey；
Step 4, when there is voltage failure, microprocessor unit produce control signal simultaneously be sent to full-bridge high-frequency array list
First corresponding MOSFET element, according to voltage change range, linear regulation drives MOSFET element signal dutyfactor, adaptively changing
The output voltage of full-bridge high-frequency array element；When there is current failure, produce control signal concurrent using microprocessor unit
Deliver in the corresponding units of failure, the IGBT device to trouble unit carries out slow drop grid voltage；Microprocessor unit is remembered simultaneously
The position of the lower fault current of record, produces corresponding numbering, and numbering 1 is bus current failure, and numbering 2 is bridge arm direct pass failure, is compiled
Numbers 3 and 5 is load short circuits failure, and failure logging is sent into short message to mobile phone by SIM808 radio communication units, is reported micro-
Failed transmission is given computer PC host computers by the fault message that processor unit is judged, intermediate alarm signal of being concurrently out of order；Electricity
Brain PC host computers are contrasted the failure stored in existing failure and computer data, determine type and the position of fault current
Put；
Step 5, microprocessor further differentiate to fault current voltage detecting, judges whether current value sets more than 1.5 times
Definite value, input voltage whether more than 50-200V, if any one exceed or both simultaneously exceed, assert correspondence position occur
Serious under-voltage, short-circuit or over current fault, performs step 6, otherwise performs step 2；
Step 6, microprocessor unit send control signal, block input signal, and shut-off occurs serious short circuit or excessively stream event
MOSFET or IGBT device in the unit of barrier, continuously send short by fault message by SIM808 radio communication units
Failed transmission, while microprocessor unit produces failure Critical alerts signal, is given computer PC host computers by letter to user mobile phone, is kept away
Exempt to cause secondary damage to inverter.
In the present embodiment, when control source conversion is completed, shut-off IGBT device forms composite buffering as shown in fig. 13 that
Circuit structure, the electric current in inductance L1 is discharged by diode VD21, while the energy warp of the stray inductance storage in VT1
Cross electric capacity C6 and resistance R1 is released, buffer the excessively stream produced during shut-off IGBT device, it is to avoid IGBT device is damaged.
In the present embodiment, when control source converting means brings into operation, open IGBT device and form as shown in figure 14
Composite buffering circuit structure, inductance L1 inhibits the current-rising-rate for opening IGBT moments in colelctor electrode side, reduces colelctor electrode
Side surge peak voltage, while the surge current that VT1 opens moment is released by VD22 and C6, such as the dotted line road in figure
Footpath, has buffered the surge current for opening that IGBT moments produce, it is to avoid IGBT device is damaged.
Control source converting means three-phase voltage effective value curve as shown in figure 15 is being installed, control source is being installed and is become
Three-phase voltage virtual value curve as shown in figure 16 after changing device, the 5ms to 35ms after opening is can be seen that from the curve in figure
Period, after installation voltage pulsation phenomenon be improved significantly, after 42ms, AC voltage waveform be improved significantly, it is defeated
Go out voltage to tend to be steady.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
Modified with to the technical scheme described in previous embodiment, or which part or all technical characteristic are equal to
Replace；And these modifications or replacement, the essence of appropriate technical solution is departed from the model that the claims in the present invention are limited
Enclose.
Claims (10)
1. a kind of wide range input converting means grid-connected for distributed power source, it is characterised in that：Including microprocessor
Unit, full-bridge high-frequency array element, composite buffering protection location, power converter unit, MOSFET/IGBT driver elements, voltage
Detection unit, current detecting unit, radio communication unit, LC wave filters and host computer；
Described microprocessor unit is used to process electric current and voltage letter that current detecting unit and voltage detection unit are collected
Breath, and then the break-make of MOSFET/IGBT driver elements control MOSFET and IGBT device is driven, while the electric current electricity that will be collected
Press information transfer to host computer, PC ends recording voltage and current information, the input voltage range grid-connected to widen distributed power source
Provided safeguard with power output grade separation；The microprocessor unit includes that main control chip, the first buffer chip and second are slow
Rush chip；The MOSFET/IGBT driver elements are connected by the first buffer chip with main control chip, the current detecting unit
Be connected with main control chip by the second buffer chip with voltage detection unit, the radio communication unit directly with the master control
Chip is connected；
The full-bridge high-frequency array element includes five structure identical full-bridge high-frequency mu balanced circuits, located at two dc bus
On, the input voltage range grid-connected for widening distributed power source；Described full-bridge high-frequency array element includes three inputs
With an output end, the first input end of described HF array unit passes through current detecting unit and voltage detection unit is connected
Battery is converted as the energy storage of distributed grid-connected power supply, the second input connection of the full-bridge high-frequency array element is described
MOSFET/IGBT driver element output ends, the 3rd input connection microprocessor unit of the full-bridge high-frequency array element
Second output end, the output end of the full-bridge high-frequency array element connects the first input end of composite buffering unit；
The composite buffering protection location includes two structure identical the first composite buffering circuits and the second composite buffering circuit,
It is respectively arranged on two buses I and II, for suppressing during IGBT device break-make peak voltage on bus；The composite buffering protection
Unit includes two inputs and two output ends, the first input end connection HF array list of the composite buffering protection location
The output end of unit, the second input of the composite buffering protection location connects the output of the MOSFET/IGBT driver elements
End, the first output end of the composite buffering protection location connects the input of current detecting unit, the composite buffering protection
Second output end of unit connects the first input end of power converter unit；
The power converter unit is used to for bus bar side DC voltage to be changed into grid side alternating voltage, including 6 structures are identical
Subelement, the circuit structure of the circuit structure of each subelement with the described first or second composite buffering circuit is identical；
The MOSFET/IGBT driver elements include driving chip and peripheral protection circuit, for microprocessor unit to be exported
Signal carries out boosting treatment, and then reaches control MOSFET and voltage needed for IGBT device grid；
The voltage detection unit is used to detect composite buffering protection location, HF array unit first input end and power frequency conversion
The voltage of the tunnel output end of unit three, including two groups of circuit structure identical voltage detecting circuits；
The current detecting unit is used to detect whether the electric current of measuring point to be checked in converting means exceeds or falls below predetermined current threshold
Value scope, including bridge arm direct pass current detecting unit, bus current detection unit and load current detection unit, the bridge arm are straight
The detection circuit of logical fault current detection unit is dispersion current foldback circuit, for detecting composite buffering unit and power frequency conversion
Whether the bridge arm direct pass electric current of measuring point to be checked exceedes pre-set current value, the bus current detection unit and load current in unit
The detection protection circuit of detection unit is concentration current foldback circuit, and the bus current detection unit is used to detect that direct current is female
Whether the electric current of line measuring point to be checked exceedes predetermined current threshold scope, and a bus current inspection is respectively equipped with two buses
Unit is surveyed, the load current detection unit is used to detect whether the electric current of measuring point to be checked on load connecting line to exceed predetermined current
Threshold range；
The radio communication unit is used to for the signal of microprocessing unit to radio to host computer；
The LC wave filters are used to filter the harmonic wave of power converter unit generation, including three groups of LC filter circuits, three groups of LC
The input of filter circuit connects three tunnel output ends of the power converter unit, the output of three groups of LC filter circuits respectively
End connects the triple line of power network respectively；
The host computer is mobile phone and computer PC, voltage, electric current and power information for real-time monitoring device, while can pass through
Send the break-make of instruction control IGBT device.
2. the wide range input converting means grid-connected for distributed power source according to claim 1, its feature exists
In：The full-bridge high-frequency mu balanced circuit includes high voltage bus filter capacitor, the first MOSFET element, the second MOSFET element, the
Three MOSFET elements, the 4th MOSFET element, high frequency full-bridge boost transformer, first choice derailing switch, the first backward dioded,
Second backward dioded, the 3rd backward dioded and the 4th backward dioded；The two ends conduct of the high voltage bus filter capacitor
The first input end of the HF array unit, connects as the energy storage device of distributed generation system, while connecting voltage inspection
Survey the input of unit；The drain electrode of first MOSFET element and the second MOSFET element connects high voltage bus filtered electrical simultaneously
One end of appearance, the source electrode of first MOSFET element connects the different name input and of high frequency full-bridge boost transformer simultaneously
The drain electrode of four MOSFET elements, the source electrode of second MOSFET element connects the of the same name defeated of high frequency full-bridge boost transformer simultaneously
Enter to hold the drain electrode with the 3rd MOSFET element, the source electrode of the 3rd MOSFET element and the 4th MOSFET element connects height simultaneously
Press the other end of bus filter capacitor；First MOSFET element, the second MOSFET element, the 3rd MOSFET element and the 4th
The grid of MOSFET element connects the output end of MOSFET/IGBT driver elements as the second input of HF array unit；
The output end of the same name of the high frequency full-bridge boost transformer connects negative electrode and the 4th reverse two pole of the 3rd backward dioded simultaneously
The anode of pipe, the different name output end of the high frequency full-bridge boost transformer connects the first input end of first choice derailing switch；Institute
The signal pins 2 of first choice derailing switch are stated as the 3rd input of HF array unit, the of connection microprocessor unit
Two output ends；The output end of the first choice derailing switch connects anode and second reverse two pole of the first backward dioded simultaneously
The negative electrode of pipe；The negative electrode connection of the negative electrode and the 4th backward dioded of the first described backward dioded, as the full-bridge high-frequency
First output end of mu balanced circuit, the anode connection of the anode and the 3rd backward dioded of second backward dioded, as
Second output end of the full-bridge high-frequency mu balanced circuit；Five structure identical full-bridge high-frequency mu balanced circuits are high by previous full-bridge
The mode that second output end of frequency mu balanced circuit is connected with the first output end of adjacent next full-bridge high-frequency mu balanced circuit
Connected, series connection change-over terminal 1 and next full-bridge high-frequency of the first choice derailing switch of previous full-bridge high-frequency mu balanced circuit
The output end of the same name connection of mu balanced circuit medium-high frequency full-bridge boost transformer；First the first output of full-bridge high-frequency mu balanced circuit
End and the 5th the second output end of full-bridge high-frequency mu balanced circuit connect collectively as a pair of output of full-bridge high-frequency array element
Connect the first input end of composite buffering unit.
3. the wide range input converting means grid-connected for distributed power source according to claim 2, its feature exists
In：The first composite buffering circuit includes the first IGBT device, first resistor, the 6th electric capacity, the first inductance, the 21st anti-
To diode, the 22nd backward dioded；One end of first inductance is used as the first of the composite buffering protection location
Input, connects the output end of full-bridge high-frequency array element, while connecting the negative electrode of the 21st backward dioded, described first
The other end of inductance connects colelctor electrode, one end of first resistor, the anode of the 21st backward dioded of the first IGBT device
With the anode of the 22nd backward dioded, the moon of emitter stage the 22nd backward dioded of connection of first IGBT device
Pole, the other end of first resistor, the positive pole of the 6th electric capacity, the first input end of power converter unit, the 6th electric capacity it is negative
Pole as composite buffering protection location the second output end, connect the first IGBT device emitter stage and power converter unit the
One input, the gate pole of the first IGBT device connects MOSFET/IGBT and drives as the second input of composite buffering protection location
The output end of moving cell；The colelctor electrode of the first described IGBT device connects electricity as the first output end of composite buffering unit
Flow input, the output end of HF array unit of detection unit.
4. the wide range input converting means grid-connected for distributed power source according to claim 3, its feature exists
In：The power converter unit also includes the 8th electric capacity；The gate pole of the IGBT device of each subelement is as power converter unit
The second input, connect IGBT driver elements output end；One end of inductance in each subelement is single respectively as corresponding son
The input of unit；Output end of the emitter stage of the IGBT device in each subelement respectively as corresponding subelement；6 structures
The first subelement, the 3rd subelement in identical subelement, the input of the 5th subelement are connected to a bit, become as power
The positive pole of the first input end of frequency unit, the second output end of the first composite buffering circuit that connection is connected with bus I；Described 6
The second subelement, the 4th subelement in individual structure identical subelement, the output end of the 6th subelement be connected to a bit, as
The negative pole of the first input end of power converter unit, the second output of the second composite buffering circuit that connection is connected with bus II
End；8th capacitance connection is between the input of the first subelement and the output end of the second subelement；6 structure phases
With subelement in the first subelement, the 3rd subelement, the output end of the 5th subelement be connected respectively the second subelement,
4th subelement, the input of the 6th subelement, and respectively as three tunnel output ends of power converter unit.
5. the wide range input converting means grid-connected for distributed power source according to claim 4, its feature exists
In：The peripheral circuit of the MOSFET/IGBT driver elements includes the first diode, the 9th electric capacity, the tenth electric capacity, current limliting electricity
Resistance, buffer resistance, feedback resistance, transistor and optocoupler；6 pin of driving chip connect the anode of the first diode, the one or two pole
The negative electrode connection of pipe connects 15V simultaneously by the drain electrode of the colelctor electrode of driving IGBT device and MOSFET element, 2 pin of driving chip
One end of power supply, the 9th capacitance cathode and feedback resistance, 3 pin of driving chip connect the positive pole and buffering electricity of the tenth electric capacity simultaneously
One end of resistance；The other end of buffer resistance as IGBT driver elements output end, connection by the gate pole of driving IGBT device and
The grid of MOSFET element；The negative pole of the 9th electric capacity and the tenth electric capacity connect simultaneously by the emitter stage of driving IGBT device,
The source electrode of MOSFET element and 1 pin of driving chip, 15 pin of driving chip connect one end of current-limiting resistance, current-limiting resistance it is another
One end connects 15V power supplys, and 14 pin of driving chip connect the colelctor electrode of transistor, the emitter stage of transistor and 1 pin phase of optocoupler
Even, the grid of transistor connects the first buffer chip of microprocessor unit, and 5 pin of driving chip are connected with 4 pin of optocoupler, light
3 pin of coupling connect the other end of feedback resistance, the 2 pins connection microprocessor unit of optocoupler.
6. the wide range input converting means grid-connected for distributed power source according to claim 1, its feature exists
In：The voltage detection unit includes iron core and signal processing circuit, and wherein iron core to separate and be provided with a Hall element at mouth, uses
In the magnetic flux signal of iron core is converted into electric signal, signal processing circuit includes amplifier chip, the first triode, the two or three pole
Pipe, measurement resistance；The input in the same direction of amplifier chip connects one end of Hall element, and the inverting input connection of amplifier chip is suddenly
The other end of your element, the positive source of amplifier chip connects the colelctor electrode of power supply+VCC and the first triode, amplifier core simultaneously
4 pin of piece connect the emitter stage of power supply-VCC and the second triode simultaneously, and 5 pin of amplifier chip connect the first triode simultaneously
The base stage of base stage and the second triode, the emitter stage of the first triode connects one end and the two or three pole of iron core secondary coil simultaneously
The colelctor electrode of pipe, the other end of iron core secondary coil is by measuring resistance eutral grounding.
7. the wide range input converting means grid-connected for distributed power source according to claim 5, its feature exists
In：The dispersion current foldback circuit is used to detect the bridge that the IGBT device in composite buffering unit and power converter unit is constituted
Arm through current, including first voltage comparator, 3rd resistor, the 4th resistance, the 5th resistance and the 6th resistance, the second diode
With the 3rd diode and the first adjustable potentiometer；The input in the same direction of the first voltage comparator connects one end of the 4th resistance
With the anode of the second diode, the negative electrode of the second diode is used as the input for disperseing current foldback circuit, connection power frequency conversion
The colelctor electrode of each IGBT device in unit；One end connection+15V dc sources of 3rd resistor, the other end connects the 4th resistance
One fixing end of the other end and the first adjustable potentiometer；Another fixing end ground connection of the first adjustable potentiometer, first is adjustable
The sliding end of potentiometer is connected with one end of the 5th resistance, and the other end of the 5th resistance connects the reverse defeated of first voltage comparator
Enter end；The positive source connection 15V dc sources of first voltage comparator, one end of the 6th resistance, MOSFET/IGBT drive list
The pin 2 of the driving chip of unit；First voltage comparator power cathode ground connection, the signal output part of first voltage comparator with
The other end of the 6th resistance and the negative electrode of the 3rd diode are connected, and the anode of the 3rd diode is used as dispersion current foldback circuit
Output end, connects the pin 6 of the driving chip of MOSFET/IGBT driver elements, and the signal output part of first voltage comparator connects
Connect the second buffer chip of microprocessor unit.
8. the wide range input converting means grid-connected for distributed power source according to claim 5, its feature exists
In：The concentration current foldback circuit includes Hall current sensor, the 7th resistance, the 8th resistance, the 9th resistance, second adjustable
Potentiometer, the 11st electric capacity, the 12nd electric capacity and second voltage comparator；Hall current sensor is installed on the company of tested measuring point
In wiring, the signal output part of Hall current sensor is connected with the input in the same direction of second voltage comparator；7th resistance with
12nd electric capacity is in parallel and then one end is grounded, and the other end connects the input in the same direction of second voltage comparator, carries out signal filtering；
Second fixing end of adjustable potentiometer one accesses 15V power supplys, another fixing end ground connection, sliding end and second voltage comparator
Reverse input end is connected, there is provided feedback voltage；5V power supplys are accessed as pull-up resistor, other end connection second in 8th resistance one end
The signal output part of voltage comparator and the 9th resistance one end；The other end of the 9th resistance is used as the one of concentration current foldback circuit
Individual output port, is connected with the second buffer chip of microprocessor unit, while one end of the 11st electric capacity is connected, the 11st electricity
The other end ground connection of appearance；9th resistance and the 11st electric capacity constitute RC retardation ratio circuit.
9. the wide range input converting means grid-connected for distributed power source according to claim 1, its feature exists
In：The power pack of each unit is exported (output ± 15V, 5V, 3.3V voltage) by with plurality of voltages in the device
Switching Power Supply is provided.
10. a kind of method that wide range input grid-connected for distributed power source is converted, the method passes through claim 1 institute
The wide range input converting means grid-connected for distributed power source stated is realized, it is characterised in that：The method includes following
Step：
Step 1, using microprocessor unit control full-bridge high-frequency array element, composite buffering protection location, power converter unit
With the inner member of MOSFET/IGBT driver elements, whole control source converting means is set to be in running status, specific method
For：
Step 1.1, SPWM (i.e. sinusoidal pulse width modulation) signal is sent using microprocessor unit；
Step 1.2, boosting treatment is carried out by MOSFET/IGBT driver elements, SPWM voltage signal magnitudes are raised to 15V；
Step 1.3, the respectively MOSFET element of driving full-bridge high-frequency array element, composite buffering unit and power converter unit
IGBT device, makes each MOSFET and IGBT device alternate conduction, is used in the grid-connected wide range input of distributed power source and becomes
Changing device is in normal operating condition；
Step 2, the data acquisition and the record that carry out electric current and voltage, specific method is：
Step 2.1, while using the dispersion current foldback circuit in voltage detection unit, current detecting unit, concentrate excessively stream protect
Electric current and voltage of the protection circuit to the voltage, composite buffering protection location and power converter unit of full-bridge high-frequency array element front end
Carry out Real-time Collection；
Voltage detection unit produces signal all the way, gives microprocessor unit, when voltage fluctuation occurs more than the first default input
During voltage range, promote the change of MOSFET element dutycycle, change the output voltage of full-bridge high-frequency array element, it is to avoid due to
Influence of the fluctuation of input voltage to output voltage；
The level signal that current foldback circuit is produced of concentrating in bus current detection unit and load current detection unit is passed through
The driving chip and microprocessor unit of MOSFET/IGBT driver elements are given in the delay of RC retardation ratio circuit；
Each road electric current of step 2.2, microprocessor unit acquisition and recording and voltage data, build terminal voltage to be detected with detection in real time
The graph of relation of branch road；
Whether step 3, microprocessor unit judge current value more than the first predetermined current threshold, and whether the voltage at end to be detected surpasses
The first default input voltage range is crossed, if any one is surpassed in the first predetermined current threshold and the first default input voltage range
Cross or both while exceed, then illustrate that system breaks down, failure judgement classification is voltage failure or current failure, performs step
4, otherwise system is working properly, returns and performs step 2；
Step 4, when there is voltage failure, microprocessor unit produce control signal simultaneously be sent to full-bridge high-frequency array element phase
MOSFET element is answered, according to voltage change range, linear regulation drives MOSFET element signal dutyfactor, adaptively changing full-bridge
The output voltage of HF array unit；When there is current failure, microprocessor unit produces control signal and sends to appearance
In the corresponding units of failure, the IGBT device of the unit to breaking down carries out slow drop grid voltage；Microprocessor unit is recorded simultaneously
The position of lower fault current, produces corresponding numbering, and failure logging is sent into short message to mobile phone, report by radio communication unit
Failed transmission is given computer PC host computers by the fault message that microprocessor unit is judged, intermediate alarm signal of being concurrently out of order；
Computer PC host computers are contrasted the failure stored in existing failure and computer data, determine fault current type and
Position；
Whether step 5, microprocessor further differentiate to fault current voltage detecting, judge current value more than the second predetermined current
Threshold value, whether terminal voltage to be detected is more than the second predetermined voltage threshold scope, wherein the second predetermined current threshold is pre- more than first
If current threshold, the end value of the second default input voltage range presets input voltage range more than first, if the second predetermined current
Any one is exceeded or both while be exceeded in threshold value and the second default input voltage range, then assert correspondence position generation
Serious under-voltage, short-circuit or over current fault, performs step 6, otherwise return to step 2；
Step 6, microprocessor unit send control signal, block input signal, and shut-off occurs serious under-voltage, short-circuit or excessively stream event
MOSFET or IGBT device in the unit of barrier, short message to use is continuously sent by fault message by radio communication unit
Family mobile phone, while microprocessor unit produces failure Critical alerts signal, computer PC host computers is given by failed transmission.
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