CN111937146B - 模块化功率开关元件和多个模块化元件的可拆卸组件 - Google Patents

模块化功率开关元件和多个模块化元件的可拆卸组件 Download PDF

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CN111937146B
CN111937146B CN201980023839.8A CN201980023839A CN111937146B CN 111937146 B CN111937146 B CN 111937146B CN 201980023839 A CN201980023839 A CN 201980023839A CN 111937146 B CN111937146 B CN 111937146B
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conductive
modular
assembly
power switch
power
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CN111937146A (zh
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弗雷德保德·基尔
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Institut Vedecom
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Institut Vedecom
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00

Abstract

根据本发明的模块化元件(2)包括由中间介电层(CD2)分隔开的第一和第二导电板(PH2、PB2)的叠层，以及至少一个插设在第一和第二板之间的功率开关电子芯片(CP1、CP2)，该芯片具有包括第一功率电极和开关控制电极的上表面以及包括第二功率电极的下表面，并且该第一和第二功率电极分别与该第一和第二板保持电连续。根据本发明，模块化元件包括多个孔(OG2、OA2、OB2、OC2、OD2)，这些孔从第一和第二板的外表面延伸到叠层中并且垂直于外表面延伸，多个孔包括至少一个与开关控制电极连通的第一孔(OG2)以及至少一个完全穿过叠层的第二孔(OA2、OB2)，该第一和第二孔各自包括介电层(DE2)和导电层(CI2)，并且第一孔的导电层电连接至开关控制电极。

Description

模块化功率开关元件和多个模块化元件的可拆卸组件
相关申请的交叉引用
本发明要求于2018年3月30日提交的申请号为1852816的法国专利申请的优先权，其内容(文本、附图和权利要求)通过引用并入本文。
技术领域
本发明总体上涉及电力电子领域。更特别地，本发明涉及模块化功率开关元件以及这种模块化元件的可拆卸组件。
背景技术
功率开关模块形成构建电力电子装置的基本单元。这些功率开关模块可以关联以形成开关电桥，也可以并联以传递所需电流。由两个电子功率开关组成的开关电桥支路是非常广泛地用于制成诸如换流器和功率转换器的电力电子装置的基本功率模块。
当前的需求推动进一步寻求模块化，以特别允许基于相同的模块化单元来生产从最简单到最复杂的不同电路，提高标准化并降低成本。此外，考虑到在基本单元层面测试功能的可能性，更好的模块化允许降低生产废料的价值。
功率开关模块的紧凑性不仅对于降低材料成本并且对于实现最佳的设计折衷方案都是必不可少的特征。实际上，紧凑性有利于减少电阻性、电感性和电容性寄生元件。减少寄生电感，尤其是减少功率汇流条中的寄生电感，对于保护电路免受潜在的破坏性过电压、改善对电磁辐射的控制、减少产生的热量并提高开关速度是非常重要的。
如现有的硅碳化物(SiC)和镓氮化物(GaN)、以及不久以后的钻石的新的功率半导体的合理使用同样要求架构的紧凑性。实际上，这些新的功率半导体带来的更大的电流密度、更高的开关频率推动紧凑性的提高。
3D架构对于提高模块和电力电子装置的紧凑性具有一定的益处。然而，这些架构中的冷却要求非常严格，必须在其中实施有效的解决方案。有必要在最接近功率芯片处提取耗散能量，以便将部件的温度保持在临界值以下并保证热平衡。功率芯片的双面冷却是所期望的。可能需要通过载热液体和/或使用热管的高性能冷却装置。
便于生产所谓的“SiP”(代指英语“System in Package(封装内系统)”)类型的设备结构由于其在集成度和紧凑性方面带来的优势而引人关注。允许电极的空间位置具有灵活性的功率开关模块架构有利于“SiP”设备的生产。
直到尽可能最基本的单元的架构的可拆卸性对于可维修性来说是相当重要的保障。通过机械压力或紧固装置来确保电接触的所谓“压装”技术允许生产可测试且可更换的基本单元，同时通过消除焊缝提高了在热循环剧烈的应用中的可靠性。
现在看来可期望的是，提出一种具有新的基本开关单元架构的功率开关模块，该功率开关模块适合于并联和/或堆叠类型的可拆卸组件、新的SiC和GaN功率半导体，尤其是侧面结构式GaN晶体管、3D技术和压装技术、以及基于印刷电路制造技术的经济型批量生产。
发明内容
根据第一方面，本发明涉及一种模块化功率开关元件，其包括由中间介电层分隔开的第一和第二导电板的叠层，以及至少一个插设在第一和第二导电板之间的功率开关电子芯片，功率开关电子芯片具有包括第一功率电极和开关控制电极的上表面、以及包括第二功率电极的下表面，并且该第一和第二功率电极分别与第一和第二导电板保持电连续。根据本发明，模块化功率开关元件包括多个孔，该多个孔从第一和第二导电板的外表面延伸到叠层中并且垂直于该外表面延伸，该多个孔包括至少一个与开关控制电极连通的第一孔和至少一个完全穿过叠层的第二孔，该第一和第二孔各自包括介电层和导电层，并且第一孔的导电层电连接至开关控制电极。
根据特定特征，孔以固定的间距分布。
根据另一特定特征，模块化功率开关元件包括并联安装的两个功率开关电子芯片，功率开关电子芯片并排安装并且具有相对设置的开关控制电极，并且包括第一孔，第一孔与开关控制电极连通并且具有电连接至开关控制电极的导电层。
根据另一特定特征，功率开关电子芯片是垂直型晶体管芯片。
应注意到，模块化功率开关元件非常适合于形成不同的晶体管电子电路，诸如并联、共源共栅(cascode)和其他类型的半桥、全桥、电路，以及级联(cascade)型开关桥和级联型开关矩阵。
根据另一方面，本发明涉及一种可拆卸功率开关组件，其包括至少两个如上所述的模块化功率开关元件以及多个组装导电销，其中，组装导电销插设在模块化功率开关元件的孔中，并确保模块化功率开关元件之间的机械组装和电连接的功能。
根据特定特征，两个模块化功率开关元件头尾相连地设置。
根据另一特定特征，可拆卸功率开关组件在模块化功率开关元件中的一个的外表面上包括对与模块化功率开关元件的功率开关电子芯片的开关控制电极的多个电连接的可接触性，该多个电连接通过模块化功率开关元件的第一孔和组装导电销来确保。
根据另一特定特征，可拆卸功率开关组件包括由模块化功率开关元件之间的空间形成的流体循环通道，该空间由通过组装导电销获得的模块化功率开关元件之间的间隔来确定。
根据另一特定特征，可拆卸功率开关组件还包括插设在模块化功率开关元件之间的至少一个组装和互连元件，该组装和互连元件包括至少一个导电条，在该导电条中形成有多个通孔，这些通孔以固定的间距分布并且容纳组装导电销。
根据另一特定特征，组装和互连元件包括至少两个导电条，导电条设置成在它们之间具有确定的间隔，从而形成流体循环通道。
附图说明
通过阅读以下参照附图的本发明的多个特定实施例的详细描述，本发明的其他优点和特征将更加清楚地显现，在附图中：
图1是示出根据现有技术的功率开关模块的架构的透视图；
图2是示出根据本发明的模块化功率开关元件的第一实施例的简化剖面图；
图3是示出图2的模块化功率开关元件中的在晶体管芯片的栅极电极上方的互连孔的定位的简化俯视图；
图4是示出根据本发明的模块化功率开关元件的第二实施例的简化剖视图；
图5是示出图4的模块化功率开关元件中的在晶体管芯片的栅极电极上方的互连孔的定位的简化俯视图；
图6是示出根据本发明的包括流体循环通道的功率开关组件的实施例的简化剖视图；
图7是示出可用于生产根据本发明的功率开关组件的组装和互连元件的第一实施例的简化剖视图；
图8是示出根据本发明的包括如图7所示的组装和互连元件的功率开关组件的另一实施例的简化剖视图；并且
图9是示出可用于生产根据本发明的功率开关组件的组装和互连元件的第二实施例的简化剖视图。
具体实施方式
在现有技术中，用于生产功率开关模块的功率芯片的封装广泛使用了源自于所谓的“IMS”技术(代指“Insulated Metal Substrate(绝缘金属基板)”)的技术。芯片夹设在两个铜质导电板之间。电解铜沉积和银烧结技术用于芯片的电互连。由以玻璃纤维增强或未增强的环氧型树脂组成或由聚酰亚胺组成的电介质用于电绝缘。激光切割和钻孔通常用于去除材料。通常通过湿法蚀刻铜箔来获得用于电互连的铜线路和圆片。
因此，如图1的现有技术的示例所示，由开关电桥支路形成的功率开关模块PM的3D堆叠包括晶体管芯片THS和TLS，汇流条+DC和-DC，中央汇流条OUT，互连导电片CGU和CGL，以及电绝缘介电层IS1U、IS2U和IS1L、IS2L。汇流条+DC、-DC和OUT以及互连导电片CGU和CGL由铜制成，并且电绝缘介电层IS1U、IS2U和IS1L、IS2L通常由上述基于环氧树脂或聚酰亚胺的材料制成。
晶体管芯片THS和TLS在此是垂直类型，并且包括分别位于芯片上表面和下表面的源极电极和漏极电极(未标记)。源极电极和漏极电极电连接至汇流条。晶体管芯片THS、TLS的栅极电极GU、GL位于芯片的上表面。栅极电极GU和GL分别通过导电线路CU和CL连接至互连导电片CGU和CGL，并且与接触端GPU和GPL保持电连续性。电绝缘介电层IS1U、IS1L分别确保汇流条+DC、-DC和互连导电片CGU、CGL之间的电绝缘。电绝缘介电层IS2U、IS2L分别确保互连导电片CGU、CGL和中央汇流条OUT之间的电绝缘。
芯片THS和TLS与直流电源电压的电气连接由汇流条+DC和-DC来确保。栅极电极GU和GL的控制通过接触端GPU和GPL来确保。开关支路PM的中点在专用于交流电压的中央汇流条OUT上。
如在图1中可见的，用于接触芯片的栅极电极的接触端GPU和GPL横向定位在结构上，也就是说，位于该结构的侧边上。接触端GPU和GPL的这种定位通常是不利的。实际上，必须提供额外的连接装置以电连接到通常设置在结构的上表面或下表面的控制电路。
现在将参照图2和图3在下文中详细描述根据本发明的模块化功率开关元件的第一特定实施例1，以及由两个这种类型的模块化元件构成的组件。
在本发明的概念中，模块化功率开关元件是可标准化的部件。有利地，模块化功率开关元件1使用用于制造英语为“Printed Circuit Board(印刷电路板)”的称为PCB的印刷电路板的技术来生产。这些技术已经被熟练掌握并允许低成本制造。
因此，为了生产根据本发明的模块化功率开关元件1，可以使用包括层压、光刻、金属镀覆、湿法蚀刻及其他的不同制造技术的组合。对于功率芯片的互连，可以使用称为TLP焊接的瞬态液相焊接、金属纳米颗粒粉末烧结或扩散焊接。也可以使用激光切割和钻孔，以及可选地诸如冲头模锻的其他方式来切割绝缘的薄膜或薄片和铜的薄膜或薄片。
在图2中，示出了处于预组装状态的两个标准的模块化功率开关元件1A和1B。模块化功率开关元件1A和1B头尾相连地设置。三个导电组装销21、22和23同样设置成被容纳在模块化功率开关元件1A和1B的孔中。
模块化功率开关元件1A、1B在此分别包括晶体管芯片CPA、CPB。模块化元件的其他实施例可以包括多个晶体管芯片CP。
在该实施例中，上表面在图3中示出的晶体管芯片CPA、CPB是垂直型，并且包括分别位于芯片的上表面和下表面的形成功率电极的源极电极S和漏极电极(不可见)。形成开关控制电极的晶体管芯片CPA、CPB的栅极G位于芯片的上表面，在该芯片的上表面的中心。晶体管芯片CPA、CPB埋设在结构中，夹在两个通常由铜制成的上部导电板PHA、PHB和下部导电板PBA、PBB之间。中间介电层CDA、CDB将上部导电板PHA、PHB和下部导电板PBA、PBB分隔开，因此，上部导电板PHA、PHB和下部导电板PBA、PBB彼此电隔离。晶体管芯片CPA、CPB包含在形成于中间介电层CDA、CDB的容纳槽中，并且包括分别电连接至上部导电板PHA、PHB和下部导电板PBA、PBB的上源极面和下漏极面。
根据本发明，在上部导电板PHA、PHB中设置有孔OG1A、OG1B。孔OG1A、OG1B从上部导电板PHA、PHB的上表面延伸到晶体管芯片CPA、CPB的栅极电极G的表面。孔OG1A、OG1B用于通过上部导电板PHA、PHB与芯片CPA、CPB的栅极电极G电连接。孔OG1A、OG1B通常是通过激光钻孔形成的，并且包括介电层DEA、DEB和内部导电层CIA、CIB。介电层DEA、DEB在它们之间使上部导电板PHA、PHB和内部导电层CIA、CIB电绝缘。内部导电层CIA、CIB通常通过镀铜工艺制成。如在图3中可见的，内部导电层CIA、CIB与栅极电极G电接触。孔OG1A、OG1B通过其内部导电层CIA、CIB而允许将与栅极电极的电连接引导到上部导电板PHA、PHB的上表面。
在模块化功率开关元件1A、1B中形成有多个其他孔OA1A、OA1B至OD1A、OD1B。
如在图2中可见的，孔OA1A、OA1B和OB1A、OB1B在此是穿过上部导电板PHA、PHB和下部导电板PBA、PBB以及中间介电层CDA、CDB的通孔。介电层DEA、DEB和内部导电层CIA、CIB存在于孔OA1A、OA1B和OB1A、OB1B中。
孔OC1A、OC1B和OD1A、OD1B是分别通过在导电板PHA、PHB和PBA、PBB中钻孔而直接获得的没有介电层的简单孔。在模块化元件1A、1B中，孔OC1A、OC1B和OD1A、OD1B不是通孔并且分别沿导电板PHA、PHB和PBA、PBB中的同一轴线齐平。孔OC1A、OC1B和OD1A、OD1B分别保持包含在导电板PHA、PHB和PBA、PBB的厚度中，从而在将导电组装销21、23容纳在这些孔中时，避免了上部导电板PHA、PHB和下部导电板PBA、PBB之间的所有短路风险。
通常，所有孔OG1A、OG1B和OA1A、OA1B至OD1A、OD1B沿垂直于上部导电板PHA、PHB和下部导电板PBA、PBB的上表面平面和下表面平面的轴线形成。
如在图2中可见的，孔OG1A、OG1B和OA1A、OA1B至OC1A、OC1B在上部导电板PHA、PHB中以相同的间距P间隔开，从而在组装模块化元件时，此处为模块化元件1A和1B的头尾相接的组装时，允许孔的重合放置。在该实施例中，虽然在下部导电板PBA、PBB中不存在孔OG1A、OG1B，但该板中的孔具有相同的间距P。
当组装两个模块化元件1A和1B时(箭头F)，三个销21、22和23分别接合在孔OD1A和OA1B、孔OB1A和OG1B以及孔OA1A和OC1B中。销21、22和23确保机械组装和电连接。因此，晶体管芯片CPA和CPB的栅极电极G在上部板PHA的上表面上分别在孔OG1A和OB1A处是可接触的。
现在将参照图4、图5和图6在下文中详细描述根据本发明的模块化功率开关元件的第二特定实施例2，以及由两个该类型的模块化元件构成的第一组件。
如图4所示，模块化功率开关元件2与模块化元件1的不同之处主要在于，模块化功率开关元件2包括两个同样是垂直型但具有不同的连接配置的晶体管芯片CP1和CP2，该连接配置通过用于连接栅极的孔OG2形成。
与模块化元件1类似，晶体管芯片CP1和CP2掩埋在通常由铜制成的上部导电板PH2和下部导电板PB2两者之间。中间介电层CD2将上部导电板PH2和下部导电板PB2分隔开，它们因此彼此电绝缘。晶体管芯片CP1和CP2包含在形成在中间介电层CD2中的相应容纳槽中。
在该实施例中，晶体管芯片CP1和CP2并联安装，这意味着晶体管芯片CP1和CP2的源极电极、漏极电极和栅极电极两两地连接在一起。
如图5所示，芯片CP1、CP2在其上表面包括源极电极S1、S2和栅极G1、G2，漏极电极(不可见)位于该芯片的下表面上。在芯片CP1、CP2中，栅极电极G1、G2不像在模块化元件1中那样安装在中心，而是安装在芯片的边缘。芯片CP1和CP2并排设置，其栅极电极G1和G2彼此相对。源极电极S1、S2和漏极电极(不可见)分别电连接至上部导电板PH和下部导电板PB。孔OG2在此允许将栅极电极G1和G2连接在一起并且将电连接引导到上部导电板PH2的上表面。
如图4所示，孔OG2在此是穿过上部导电板PH2和下部导电板PB2以及中间介电层CD2的通孔。介电层DE2和导电层CI2存在于孔OG2中，并且在上部导电板PH2中覆盖该孔OG2。如图5中可见的，内部导电层CI2与芯片CP1和CP2的栅极电极G1和G2电接触。
孔OG2通过其内部导电层CI2而允许将栅极电极G1和G2的电连接引导到上部导电板PH2的上表面。应注意到，产生内部导电层CI2的介电层DE2的金属化不会在孔OG2中延伸超出与栅极电极G1和G2接触，以使得在栅极电极G1和G2与电连接至漏极电极的下部导电板PB2之间不发生短路。应注意到，与模块化元件1相比，孔OG2在下部导电板PB2中的存在允许在此具有额外的组装导电销并且在销之间具有规则的间隔(间距P)。
模块化元件2的其他孔OA2、OB2、OC2和OD2与模块化元件2的孔OA1、OB1、OC1和OD1相似，在此不再进行描述。
在图6中示出了两个模块化元件2A和2B的组件，其具有四个导电组装销24至27。这些组装导电销24至27比用于图2的组件的组装导电销21至23更长。组装导电销24至27的这种更大的长度在此通过保持模块化元件2A和2B之间的间隔而允许形成流体循环通道CAL。因此，可以通过通道CAL建立载热流体的循环，以冷却模块化元件2A、2B。
如图7和图8所示，在本发明中提供了标准的组装和互连元件BI，组装和互连元件BI可用于制成包括大量模块化元件4A、4B、4C……的组件AS。根据本发明，模块化元件4A、4B、4C……可以设置成三维的，以形成组件AS。多个组装和互连元件BIA、BIB……可用于制造这些组件AS。
如在图7中更清楚可见的，组装和互连元件BI通常是配备有组装导电销的导电条或导电板的形式。在图7的实施例中，导电条3通常由铜制成，并且包括多个上部销28H至211H和下部销28B至211B。组装导电销紧固安装在导电条3的孔OE中。孔OE在彼此之间具有等于间距P的间隔。销在此成对安装在孔OE中，上部销和下部销插入同一孔OE中。应注意到，在其他实施例中可以利用长度更大的销来代替同一孔OE中的一对上部销和下部销。
如图9所示，可以将其他组装和互连元件BIF用于本发明的组件AS中，以形成通常用于载热或耐火的流体循环或用于热管的通道CAN。
在图9的实施例中，三个导电条4通过销OF堆叠和机械组装。在条4之间保持有间隔以便获得通道CAN。
本发明不限于此处作为示例描述的特定实施例。根据应用，本领域技术人员可以提供落入本发明的保护范围内的不同修改和变型。

Claims (10)

1.一种模块化功率开关元件(2)，包括由中间介电层(CD2)分隔开的第一和第二导电板(PH2、PB2)的叠层，以及至少一个插设在所述第一和第二导电板(PH2、PB2)之间的功率开关电子芯片(CP1、CP2)，所述功率开关电子芯片(CP1、CP2)具有包括第一功率电极(S1、S2)和开关控制电极(G1、G2)的上表面、以及包括第二功率电极的下表面，并且所述第一和第二功率电极分别与所述第一和第二导电板(PH2、PB2)保持电连续，其特征在于，所述模块化功率开关元件包括多个孔(OG2、OA2、OB2、OC2、OD2)，所述孔从所述第一和第二导电板(PH2、PB2)的外表面延伸到所述叠层中并且垂直于所述外表面延伸，所述多个孔(OG2、OA2、OB2、OC2、OD2)包括至少一个与所述开关控制电极(G1、G2)连通的第一孔(OG2)以及至少一个完全穿过所述叠层的第二孔(OA2、OB2)，所述第一和第二孔(OG2；OA2、OB2)各自包括介电层(DE2)和导电层(CI2)，并且所述第一孔(OG2)的所述导电层(CI2)电连接至所述开关控制电极(G1、G2)。
2.根据权利要求1所述的模块化功率开关元件，其特征在于，所述孔(OG2、OA2、OB2、OC2、OD2)以固定的间距(P)分布。
3.根据权利要求1或2所述的模块化功率开关元件，其特征在于，包括并联安装的两个所述功率开关电子芯片(CP1、CP2)，所述功率开关电子芯片(CP1、CP2)并联安装并且具有相对设置的开关控制电极(G1、G2)，并且包括所述第一孔(OG2)，所述第一孔与所述开关控制电极(G1、G2)连通并且具有电连接至所述开关控制电极(G1、G2)的所述导电层(CI2)。
4.根据权利要求1至3中任一项所述的模块化功率开关元件，其特征在于，所述功率开关电子芯片(CP1、CP2)是垂直型晶体管芯片。
5.一种可拆卸功率开关组件，包括至少两个根据权利要求1至4中任一项所述的模块化功率开关元件(2A、2B)和多个组装导电销(24、25、26、27)，其中，所述组装导电销(24、25、26、27)插设在所述模块化功率开关元件(2A、2B)的所述孔(OG2、OA2、OB2、OC2、OD2)中，并确保所述模块化功率开关元件(2A、2B)之间的机械组装和电连接的功能。
6.根据权利要求5所述的可拆卸功率开关组件，其特征在于，两个所述模块化功率开关元件(2A、2B)头尾相连地设置。
7.根据权利要求5或6所述的可拆卸功率开关组件，其特征在于，所述可拆卸功率开关组件在所述模块化功率开关元件(2A、2B)中的一个的外表面上包括对与所述模块化功率开关元件(2A、2B)的功率开关电子芯片(CP1、CP2)的开关控制电极(G1、G2)的多个电连接的可接触性，所述多个电连接通过所述模块化功率开关元件(2A、2B)的所述第一孔(OG2)和所述组装导电销(24、25、26、27)来确保。
8.根据权利要求5至7中任一项所述的可拆卸功率开关组件，其特征在于，包括由所述模块化功率开关元件(2A、2B)之间的空间形成的流体循环通道(CAL)，所述空间由通过所述组装导电销(24、25、26、27)获得的所述模块化功率开关元件(2A、2B)之间的间隔来确定。
9.根据权利要求5至8中任一项所述的可拆卸功率开关组件，其特征在于，还包括插设在所述模块化功率开关元件(4A、4B)之间的至少一个组装和互连元件(BI、BIF)，所述组装和互连元件(BI、BIF)包括至少一个导电条(3、4)，在所述导电条中形成有多个通孔，所述通孔以固定的间距(P)分布并且容纳所述组装导电销(28H至211H；28B至211B、OF)。
10.根据权利要求9所述的可拆卸功率开关组件，其特征在于，所述组装和互连元件(BIF)包括至少两个导电条(4)，所述导电条(4)设置成在它们之间具有确定的间隔，以形成流体循环通道(CAN)。
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