CN111916560A - Thin film preparation method and device - Google Patents

Thin film preparation method and device Download PDF

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Publication number
CN111916560A
CN111916560A CN202010747199.XA CN202010747199A CN111916560A CN 111916560 A CN111916560 A CN 111916560A CN 202010747199 A CN202010747199 A CN 202010747199A CN 111916560 A CN111916560 A CN 111916560A
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substrate
solvent
thin film
film
controlling
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CN111916560B (en
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林杰
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Guangdong Juhua Printing Display Technology Co Ltd
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Guangdong Juhua Printing Display Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a film preparation method, which comprises the following steps: disposing a first substrate formed with an abnormal thin film over a second substrate deposited with ink, wherein the ink includes a solvent and a thin film material dissolved in the solvent; controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent; and controlling the solvent on the first substrate to volatilize to obtain the film. The invention also discloses a film preparation device. The invention can improve the abnormal appearance caused by the coffee ring effect, realize the film forming uniformity of the film in the pixel pit and improve the performance of the film.

Description

Thin film preparation method and device
Technical Field
The invention relates to the technical field of materials, in particular to a method and a device for preparing a thin film.
Background
At present, when an organic material film is prepared by ink-jet printing, when ink begins to volatilize in a pixel pit, the organic film material preferentially deposited near a three-phase contact line causes a pinning effect on the three-phase contact line, as shown in fig. 1. At this time, since the solvent volatilized from the edges of the ink droplets needs to be replenished from the middle portion, a capillary flow from the center to the edges is formed inside the ink droplets, and the organic material solute is continuously transported and deposited in the vicinity of the three-phase contact line, and finally, a thin organic material film with a middle thickness and two thick sides is formed. This phenomenon is called the coffee ring effect, and as shown in fig. 2, the organic material film in the pixel well has a non-uniform thickness, which affects the performance of the organic film. When the organic thin film is applied to an OLED, since the film inside the pixel is thin in the middle and thick at both sides, when power is applied, current tends to pass more through the region where the middle is thinner, resulting in light emission from only the middle portion of the pixel. And because the light-emitting area in the pixel is reduced, the aperture ratio of the whole display panel is obviously reduced, and finally the whole brightness of the display panel is low, and the performance of the OLED is influenced.
Disclosure of Invention
The invention mainly aims to provide a thin film preparation method and a thin film preparation device, which aim to realize the uniformity of film formation of an organic thin film in a pixel pit and improve the performance of the organic thin film.
In order to achieve the above object, the present invention provides a method for preparing a thin film, comprising the steps of:
disposing a first substrate formed with an abnormal thin film over a second substrate deposited with ink, wherein the ink includes a solvent and a thin film material dissolved in the solvent;
controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent;
and controlling the solvent on the first substrate to volatilize to obtain the film.
Optionally, the step of controlling the solvent on the second substrate to volatilize, and dissolving the abnormal thin film on the first substrate in the volatilized solvent includes:
based on at least one of the following three implementations: increasing the temperature difference between the first substrate and the second substrate, reducing the distance between the first substrate and the second substrate to a first preset distance and reducing the preparation air pressure to a first preset air pressure, and controlling the volatilization of the solvent on the second substrate to enable the abnormal film on the first substrate to be dissolved in the volatilized solvent.
Optionally, the step of controlling the solvent evaporation on the first substrate to obtain a thin film includes:
controlling the solvent on the first substrate to slowly volatilize so as to uniformly separate out the film material on the first substrate;
and controlling the solvent on the first substrate to be volatilized rapidly, and obtaining a thin film on the first substrate after the solvent is volatilized.
Optionally, the step of controlling the solvent on the first substrate to slowly evaporate so that the thin film material on the first substrate is uniformly deposited includes:
based on at least one of the following three implementations: increasing the preparation air pressure to a second preset air pressure, increasing the distance between the first substrate and the second substrate to a second preset distance, increasing the temperature of the first substrate, and controlling the solvent on the first substrate to slowly volatilize so as to uniformly separate out the film material on the first substrate.
Optionally, the step of controlling the solvent on the first substrate to evaporate rapidly, and after the solvent evaporates, obtaining a thin film on the first substrate includes:
controlling the solvent on the first substrate to be rapidly volatilized based on reduction of the preparation air pressure to a third preset air pressure, and obtaining a film on the first substrate after the solvent is volatilized.
Optionally, the organic thin film material is selected from one or more of a hole injection material, a hole transport material, a light emitting material, a hole blocking material, an electron transport material, or an electron injection material.
In addition, to achieve the above object, the present invention also provides a thin film formation apparatus, comprising:
the working cavity is provided with an upper supporting component and a lower supporting component which are arranged in the working cavity, and an air exhaust device connected with the working cavity;
the upper supporting assembly is used for placing a first substrate, and the lower supporting assembly is used for placing a second substrate;
the air exhaust device is used for adjusting the air pressure in the working cavity.
Optionally, the lower support assembly comprises: a lower lifting unit and a lower temperature control platform; the second substrate is arranged at the upper end part of the lower temperature control platform, the lower end part of the lower temperature control platform is fixedly connected with the upper end part of the lower lifting unit, and the lower end part of the lower lifting unit is fixedly connected with the working cavity;
optionally, an upper support assembly is also included;
the upper supporting assembly comprises at least two substrate supporting elastic pieces and a substrate supporting frame which are arranged oppositely, the upper end parts of the substrate supporting elastic pieces are fixedly connected with the working cavity, the lower end parts of the substrate supporting elastic pieces are fixedly connected with the substrate supporting frame, and the first substrate is placed on the substrate supporting frame.
Optionally, the upper lift assembly comprises: the upper end part of the upper temperature control platform is fixedly connected with the lower end part of the upper lifting unit, and the upper end part of the upper lifting unit is fixedly connected with the working cavity; the upper temperature control platform is arranged above the substrate supporting frame;
the first substrate is arranged between the upper temperature control platform and the substrate supporting frame.
The invention provides a film preparation method and a device, wherein a first substrate formed with an abnormal film is arranged above a second substrate deposited with ink, wherein the ink comprises a solvent and a film material dissolved in the solvent; controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent; and controlling the solvent on the first substrate to volatilize to obtain the film. By the mode, the abnormal morphology caused by the coffee ring effect can be improved, the film forming uniformity of the film in the pixel pit is realized, and the performance of the film is improved. The production efficiency is improved and the production speed is accelerated.
Drawings
FIG. 1 is a schematic structural diagram of a pinning effect of a thin film material during volatilization;
FIG. 2 is a schematic structural diagram of a pinning effect of a thin film material;
FIG. 3 is a schematic flow chart of a first embodiment of a method for preparing a thin film according to the present invention;
FIG. 4 is a schematic flow chart of a second embodiment of a method for preparing a thin film according to the present invention;
FIG. 5 is a schematic structural diagram of an embodiment of a thin film formation apparatus according to the present invention;
FIG. 6 is a schematic structural view of an anomalous film of the present invention before dissolution;
FIG. 7 is a schematic view of the structure of the anomalous film of the present invention with a surface partially dissolved;
FIG. 8 is a schematic view of the structure of the abnormal film forming re-inking part of the present invention;
FIG. 9 is a schematic diagram of a structure of the present invention after the thin film is completely fabricated;
FIG. 10 is a schematic structural diagram of a thin film formation apparatus after completion of thin film formation according to the present invention.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
100 First substrate 101 First dam
103 Abnormal film 104 Refill ink reservoir
105 Uniform flat film 200 Second substrate
201 Second dyke 202 Ink for ink jet recording
203 Second abnormal film 300 Working chamber
301 Upper lifting unit 302 Upper temperature control platform
303 Substrate supporting elastic member 304 Substrate supporting frame
305 Lower temperature control platform 306 Lower lifting unit
307 Air extraction valve
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The main solution of the embodiment of the invention is as follows: disposing a first substrate formed with an abnormal thin film over a second substrate deposited with ink, wherein the ink includes a solvent and a thin film material dissolved in the solvent; controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent; and controlling the solvent on the first substrate to volatilize to obtain the film.
At present, when an organic material film is prepared by ink-jet printing, when ink begins to volatilize in a pixel pit, the organic film material preferentially deposited near a three-phase contact line causes a pinning effect on the three-phase contact line, as shown in fig. 1. At this time, since the solvent volatilized from the edges of the ink droplets needs to be replenished from the middle portion, a capillary flow from the center to the edges is formed inside the ink droplets, and the organic material solute is continuously transported and deposited in the vicinity of the three-phase contact line, and finally, a thin organic material film with a middle thickness and two thick sides is formed. This phenomenon is called the coffee ring effect, and as shown in fig. 2, the organic material film in the pixel well has a non-uniform thickness, which affects the performance of the organic film. When the organic thin film is applied to an OLED, since the film inside the pixel is thin in the middle and thick at both sides, when power is applied, current tends to pass more through the region where the middle is thinner, resulting in light emission from only the middle portion of the pixel. And because the light-emitting area in the pixel is reduced, the aperture ratio of the whole display panel is obviously reduced, and finally the whole brightness of the display panel is low, and the performance of the OLED is influenced.
The invention realizes the film forming uniformity of the film in the pixel pit and improves the performance of the film.
The invention relates to a film preparation method. Referring to fig. 3, fig. 3 is a schematic flow chart of a film manufacturing method according to a first embodiment of the present invention.
In the embodiment of the invention, the film preparation method is applied to a film preparation device, and the method comprises the following steps:
a step S10 of disposing the first substrate formed with the abnormal thin film above the second substrate deposited with the ink, wherein the ink includes a solvent and a thin film material dissolved in the solvent;
in this embodiment, as shown in fig. 5, in order to improve the flatness of the organic thin film, ink is deposited on the second substrate 200 by inkjet printing, the second substrate 200 on which the ink 202 is deposited is placed in the sealed cavity 300, and then the first substrate 100 on which the abnormal thin film is formed is disposed above the second substrate. Wherein the ink comprises a solvent and a thin film material dissolved in the solvent. Wherein, the distance between the first substrate 100 and the second substrate 200 can be set and adjusted; wherein, the first dam disposed on the first substrate 100 and the second dam 201 disposed on the second substrate 200 can be disposed opposite to each other, that is, the first pixel pit on the first substrate 100 and the second pixel pit on the second substrate 200 are disposed opposite to each other, so that the solvent in the ink 202 can be more easily volatilized to the surface of the abnormal film 103 to form the re-ink-hydration portion 104; the first pixel pit is a pit body surrounded by the first dam, and the second pixel pit is a pit body surrounded by the second dam. Wherein the thin film material may be an organic thin film material. The thin film may be an organic thin film.
Specifically, when the thin film is applied to an OLED, the thin film material is selected from one or more of a hole injection material, a hole transport material, a light emitting material, a hole blocking material, an electron transport material, or an electron injection material.
Step S20 of controlling the solvent on the second substrate to volatilize, and dissolving the abnormal thin film on the first substrate in the volatilized solvent;
in this embodiment, as shown in fig. 5, after the first substrate 100 formed with the abnormal thin film is disposed above the second substrate, the solvent on the second substrate is controlled to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent.
The step S20 of controlling the solvent on the second substrate to volatilize and dissolving the abnormal thin film on the first substrate in the volatilized solvent may include:
step S21, based on at least one of the following three implementation manners: increasing the temperature difference between the first substrate and the second substrate, reducing the distance between the first substrate and the second substrate to a first preset distance and reducing the preparation air pressure to a first preset air pressure, and controlling the volatilization of the solvent on the second substrate to enable the abnormal film on the first substrate to be dissolved in the volatilized solvent.
In this embodiment, the solvent on the second substrate is controlled to volatilize by at least one of three conditions, i.e., increasing the temperature difference between the first substrate and the second substrate, decreasing the distance between the first substrate and the second substrate to a first predetermined distance, and decreasing the preparation air pressure to a first predetermined air pressure, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent. Through reducing preparation atmospheric pressure to first preset atmospheric pressure from standard atmospheric pressure, can realize that the solvent in the ink volatilizes fast, the rapid condensation dissolves unusual film on unusual film surface, has practiced thrift the time that unusual film dissolved, has increased the degree that unusual film dissolved. The preparation air pressure is the air pressure of a closed space where the first substrate and the second substrate are located when the film is prepared.
Specifically, in order to facilitate the volatilization of the solvent in the ink and the dissolution of the abnormal thin film, the temperature difference between the first substrate and the second substrate may be increased. Means for increasing the temperature difference between the first substrate and the second substrate: the temperature rise control may be performed on the first substrate 100 and the second substrate 200, respectively; temperature rise control may be performed only on the second substrate; the temperature of the second substrate 200 may be set to 35-50 c and the temperature of the first substrate 100 may be set to 5-15 c.
Specifically, in order to facilitate volatilization of a solvent in the ink and dissolution of the abnormal thin film, the distance between the first substrate and the second substrate may be reduced. A manner of reducing a distance between the first substrate and the second substrate: the first substrate 100 and the second substrate 200 may be adjusted individually, or the first substrate 100 and the second substrate 200 may be adjusted simultaneously; the distance between the first substrate 100 and the second substrate 200 may be adjusted to be 3.5-30 mm.
Specifically, in order to facilitate the volatilization of the solvent in the ink and the dissolution of the abnormal thin film, the preparation air pressure may be lowered. The air suction valve can be opened to reduce the ambient air pressure in the working chamber 300 through the air suction device, so that the ambient air pressure in the working chamber 300 is reduced to a first preset air pressure; the first preset air pressure may be set to 10torr or 12 torr.
Specifically, the Humidity cycle processing is mainly performed on the Solution type (Solution) and Suspension type (Suspension) ink 202 having a particle size of 100nm or less, and when the first substrate 100 and the second substrate are dried under reduced pressure, the solvent vapor volatilized from the ink 202 performs the "Humidity cycle processing" (Humidity cycle) on the anomalous thin film 103 on the first substrate 100: that is, the solvent vapor condenses on the surface of the anomalous film 103 and partially dissolves the surface of the anomalous film 103, resulting in a re-inked portion 104 (a thin layer of ink 202 of equal thickness, as shown in fig. 5). At this time, since the liquid surface of the re-inking portion 104 is convex and concave (gas-liquid interface) at the edge position of the pixel pit and the center position of the pixel pit, respectively, according to the Young-Laplace equation (the additional pressure Δ p always points to the curvature center of the liquid surface, so that the pressure on the concave side is greater than that on the convex side), the additional pressure at the edge position of the pixel pit in the re-inking portion 104 is greater than that at the center position of the pixel pit, that is, the p edge in fig. 5 is greater than the p center, so that the edge-to-center flow is generated in the re-inking portion 104, thereby driving the organic material originally accumulated at the edge of the pixel pit to move to the center of the pixel pit, and under the action of gravity, the nanoparticles re-dispersed into the droplet (re-inking portion 104) will be gathered at the arc center position below the droplet, and finally along with the volatilization of the solvent and shrinkage of the, the material is deposited in the central area of the pixel pit, so that the abnormal film-forming appearance with thin middle and thick two sides caused by the coffee ring effect is improved.
And step S30, controlling the solvent on the first substrate to volatilize to obtain the film.
In this embodiment, after the abnormal thin film on the first substrate is partially dissolved in the volatilized solvent, the solvent on the first substrate is controlled to be completely volatilized, so as to obtain a thin film. After the solvent dissolving the abnormal thin film (disposed on the first substrate) is completely volatilized, the organic thin film material with improved morphology is formed on the first substrate 100. When the solvent on the first substrate is volatilized, the solvent in the ink 202 (provided on the second substrate) is also volatilized (after the abnormal thin film is formed on the second substrate 200), and the solvent in the ink 202 is also volatilized while the solvent dissolving the abnormal thin film is volatilized.
Specifically, the first substrate 100 has a uniform flat film 105, and the second substrate 200 has a topographic second anomalous film 203. Therefore, after obtaining the uniform and flat thin film 105, the first substrate 100 is taken out, the second substrate 200 is placed at the position of the original first substrate 100 after being turned over outside the chamber 300, a third substrate on which ink has just been deposited is placed at the position of the original second substrate 200, and the reduced-pressure drying process of the next substrate is started.
Specifically, since the film preparation method provided by the present invention is a continuous process involving two substrates at the same time, the first substrate in the production process can be dried in the first step without a substrate above, so as to obtain the first substrate 100 with an abnormal film formed thereon; for the last substrate in the production process, the solvent vapor required for the humidity cycling process can be generated by simply depositing the solvent on a common glass substrate.
In the embodiment, by the above scheme, the first substrate formed with the abnormal thin film is arranged above the second substrate deposited with the ink, wherein the ink comprises a solvent and a thin film material dissolved in the solvent; controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent; and controlling the solvent on the first substrate to volatilize to obtain the film. Therefore, by controlling the volatilization of the solvent on the second substrate and the volatilization of the solvent on the first substrate in sequence, the abnormal appearance caused by the coffee ring effect is improved, the film forming uniformity of the film in the pixel pits is realized, and the performance of the film is improved. The solvent vapor of the latter substrate is used for carrying out humidity circulation treatment on the former substrate, so that the process cost is saved, the solvent vapor volatilized from the ink is repeatedly used, the two processes are combined together, the production efficiency is improved, and the production speed is accelerated.
Further, referring to fig. 4, fig. 4 is a schematic flow chart of a film manufacturing method according to a second embodiment of the present invention. Based on the embodiment shown in fig. 3, the step S30 of controlling the solvent on the first substrate to volatilize, so as to obtain a thin film may include:
step S31, controlling the solvent on the first substrate to slowly volatilize, so that the film material on the first substrate is uniformly separated out;
in this embodiment, after the abnormal thin film on the first substrate is partially dissolved in the volatilized solvent, the solvent on the first substrate is controlled to slowly volatilize, so that the thin film material on the first substrate is uniformly precipitated; by controlling the slow volatilization of the solvent on the first substrate, the uniform surface forming of the film can be realized, and the phenomenon that the surface of the film material is raised when the film material is rapidly separated out from the solvent of the abnormal film due to condensation is avoided.
The step S31 of controlling the solvent on the first substrate to slowly volatilize so as to uniformly deposit the thin film material on the first substrate may include:
step S311, based on at least one of the following three implementation manners: increasing the preparation air pressure to a second preset air pressure, increasing the distance between the first substrate and the second substrate to a second preset distance, increasing the temperature of the first substrate, and controlling the solvent on the first substrate to slowly volatilize so as to uniformly separate out the film material on the first substrate.
In this embodiment, the solvent on the first substrate is controlled to slowly volatilize by at least one of three conditions, i.e., increasing the preparation air pressure to a second preset air pressure, increasing the distance between the first substrate and the second substrate to a second preset distance, and increasing the temperature of the first substrate, so that the thin film material on the first substrate is uniformly precipitated. The preparation air pressure is from the first preset air pressure to the second preset air pressure, so that the surface of the film can be uniformly formed, and the phenomenon that the surface of the film material is raised when the film material is rapidly precipitated in the solvent of the abnormal film due to condensation is avoided.
Specifically, in order to facilitate slow volatilization of the solvent on the first substrate and uniform precipitation of the thin film material on the first substrate, the temperature of the first substrate may be increased; the temperature of the first substrate may be increased to 20 ℃.
Specifically, in order to facilitate slow volatilization of the solvent on the first substrate and uniform precipitation of the thin film material on the first substrate, the distance between the first substrate and the second substrate may be increased; the distance between the first substrate and the second substrate is increased, the first substrate 100 and the second substrate 200 may be adjusted independently, the first substrate 100 and the second substrate 200 may be adjusted simultaneously, and the distance between the first substrate 100 and the second substrate 200 may be adjusted to be greater than 50 mm.
Specifically, in order to facilitate slow volatilization of the solvent on the first substrate and uniform precipitation of the thin film material on the first substrate, the preparation pressure may be increased. The air extraction valve can be opened to increase the ambient air pressure in the working chamber 300 through the air extraction device, and the ambient air pressure in the working chamber 300 is increased from a first preset air pressure to a second preset air pressure; the second preset air pressure may be set to 200torr or 220 torr. The second preset air pressure is greater than the first preset air pressure, and the first preset air pressure is greater than the third preset air pressure. The second preset air pressure is higher than the first preset air pressure, so that the surface of the film can be uniformly formed, and the phenomenon that the surface of the film material is raised when the film material is rapidly separated out from the solvent of the abnormal film due to condensation is avoided. And the third preset air pressure is lower than the first preset air pressure and the second preset air pressure, so that residual solvent in the film can be thoroughly removed, and the dried film is obtained.
And step S32, controlling the solvent on the first substrate to volatilize rapidly, and obtaining a film on the first substrate after the solvent is volatilized.
In this embodiment, after the thin film material on the first substrate is uniformly deposited, a part of the solvent is still present in the thin film material on the first substrate, so that the solvent on the first substrate can be controlled to be rapidly volatilized, and after the solvent is completely volatilized, the thin film is formed on the first substrate. By quickly controlling the volatilization of the solvent on the first substrate, the residual solvent in the film is thoroughly removed, and the dry film is obtained.
The step S32 of controlling the solvent on the first substrate to evaporate rapidly, and obtaining a thin film on the first substrate after the solvent evaporates may include:
step S321, controlling the solvent on the first substrate to volatilize quickly based on reducing the preparation air pressure to a third preset air pressure, and obtaining a thin film on the first substrate after the solvent volatilizes.
In this embodiment, the solvent on the first substrate is controlled to be rapidly volatilized by reducing the preparation air pressure to a third preset air pressure, and after the solvent is volatilized, a thin film is obtained on the first substrate. By reducing the preparation air pressure from the second preset air pressure to the third preset air pressure, the residual solvent in the film can be thoroughly removed, and the dried film is obtained.
Specifically, in order to rapidly volatilize and completely volatilize the solvent on the first substrate, a thin film is formed on the first substrate, and the preparation gas pressure may be reduced. The air suction valve can be opened to reduce the ambient air pressure in the working chamber 300 through the air suction device, and the ambient air pressure in the working chamber 300 is reduced from the second preset air pressure to a third preset air pressure; wherein, the third preset pressure can be set to 10^ -3torr, and can also be set to be lower than 10^ -3 torr.
In the embodiment, by the above scheme, the first substrate formed with the abnormal thin film is arranged above the second substrate deposited with the ink, wherein the ink comprises a solvent and a thin film material dissolved in the solvent; controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent; controlling the solvent on the first substrate to slowly volatilize so as to uniformly separate out the film material on the first substrate; and controlling the solvent on the first substrate to be volatilized rapidly, and obtaining a thin film on the first substrate after the solvent is volatilized. Therefore, by slowly controlling the volatilization of the solvent on the first substrate, the uniform precipitation of the film material is realized, the more uniform surface of the film material is realized, the abnormal appearance caused by the coffee ring effect is improved, the film forming uniformity of the organic film in the pixel pit is realized, and the performance of the organic film is improved. By quickly controlling the volatilization of the solvent on the first substrate, the residual solvent in the film is thoroughly removed, and the dry film is obtained.
The invention also provides a film preparation device.
In an embodiment of the present invention, as shown in fig. 5 to 10, a thin film formation apparatus includes a working chamber 300, a lower support assembly disposed in the working chamber, an upper support assembly disposed in the working chamber, and an air exhaust device connected to the working chamber; the upper supporting component is used for placing a first substrate 100 of a working cavity, the lower supporting component is used for placing a second substrate 200 of the working cavity, and the air exhaust device is used for adjusting air pressure in the working cavity.
Wherein the first substrate 100 is disposed above the second substrate 200; a plurality of first dams 101 are arranged on the first substrate 100, a plurality of second dams 201 are arranged on the second substrate, abnormal films are arranged in the first dams 101, ink 202 is deposited in the second dams 201, and the first dams 101 and the second dams 201 are arranged oppositely; the air-extracting device is used for adjusting the air pressure in the working chamber 300.
In the present embodiment, in order to improve the flatness of the thin film, ink is deposited on the second substrate 200 by inkjet printing, and then the second substrate 200 on which the ink 202 is deposited is placed in the sealed cavity 300, and the first substrate is disposed above the second substrate; the air extractor is used for reducing the ambient air pressure in the working chamber 300 to the first preset air pressure, and the solvent in the ink 202 is volatilized to the surface of the abnormal film 103 to form the re-inking part 104. After the abnormal thin film 103 on the first substrate 100 is partially dissolved in the solvent, that is, the solvent vapor is condensed on the surface of the abnormal thin film 103 and partially dissolves the surface of the abnormal thin film 103, the organic thin film material solvent on the surface of the abnormal thin film 103 is dissolved in the solvent vapor condensed on the abnormal thin film, and a re-inking part 104 is obtained on the surface of the abnormal thin film 103; when the abnormal film is not dissolved in the solvent condensed in the abnormal film any more (at this time, the solute condensed in the solvent of the abnormal film is in a saturated state, the solvent in the ink is not volatilized any more, the solute in the ink is in a saturated state, and the solute in the ink 202 is close to the limit of the solubility thereof), the ambient air pressure in the working chamber 300 is increased through the air extraction valve 307, the ambient air pressure in the working chamber 300 is increased to a second preset air pressure, and the organic film material begins to be slowly precipitated; after the organic thin film material (solute) is slowly separated out to form a uniform thin film, reducing the ambient air pressure in the working chamber 300 through the air extraction valve 307, reducing the ambient air pressure in the working chamber 300 to a third preset air pressure, and completely removing the residual solvent in the thin film; wherein, the first preset air pressure can be set to be about 10 torr; the second predetermined pressure may be set to about 200torr and the third predetermined pressure may be set to 10-3 torr. Here, the first bank 101 disposed on the first substrate 100 and the second bank 201 disposed on the second substrate 200 may be disposed opposite to each other, that is, the first pixel pit on the first substrate 100 and the second pixel pit on the second substrate 200 may be disposed opposite to each other. Atmospheric pressure through air exhaust device with the working chamber reduces to first predetermined atmospheric pressure from standard atmospheric pressure, can realize that the solvent in the ink volatilizees fast, and the rapid condensation dissolves unusual film on unusual film surface fast, has practiced thrift the time that unusual film dissolved, has increased the degree that unusual film dissolved. The air pressure of the working cavity is increased from the first preset air pressure to the second preset air pressure through the air exhaust device, the surface of the film can be uniformly formed, and the phenomenon that the surface of the film material is convex when the film material is rapidly separated out from a solvent of an abnormal film due to condensation is avoided. The air pressure of the working cavity is reduced to the third preset air pressure from the second preset air pressure through the air exhaust device, so that residual solvents in the thin films (the thin films on the first substrate and the second substrate) can be thoroughly removed, and the dry thin film is obtained. The air pressure of the working cavity is sequentially adjusted through the air extractor according to the preparation process, the abnormal appearance caused by the coffee ring effect is improved, the uniformity of the film formation of the organic film in the pixel pit is realized, and the performance of the organic film is improved.
In addition, the solvent vapor of the next substrate is used for carrying out humidity circulation treatment on the previous substrate, so that the process cost is saved, the solvent vapor volatilized from the ink is repeatedly used, the two processes are combined together, the production efficiency is improved, and the production speed is accelerated.
Specifically, as shown in fig. 5 and 10, the lower support assembly includes: a lower lifting unit 306 and a lower temperature-controlled platform 305; the second substrate 200 is disposed at the upper end of the lower temperature control platform 305, the lower end of the lower temperature control platform 305 is fixedly connected to the upper end of the lower lifting unit 306, and the lower end of the lower lifting unit 306 is fixedly connected to the working chamber 300.
After the ambient air pressure in the working chamber 300 is reduced to a first preset air pressure, the distance between the first substrate 100 and the second substrate 200 may be reduced to a first preset distance by the lower lifting assembly, wherein the first preset distance may be 3.5-30 mm; the solvent in the ink 202 is volatilized to the surface of the anomalous film 103 to form a re-ink-hydrated portion 104. After the re-inking part 104 is obtained on the surface of the abnormal film 103, the distance between the first substrate 100 and the second substrate 200 is increased to a second preset distance through a lower lifting assembly, so that the solute in the ink 202 is close to the limit of the solubility of the solute; wherein, the second preset distance may be 50 mm.
Through the lower temperature control platform 305, the second substrate 200 is conveniently heated, and the volatilization and drying time of the ink 202 on the second substrate 200 is favorably reduced. The lower temperature controlled platen 305 is used to control the temperature of the second substrate 200. In order to condense the solvent vapor volatilized from the second substrate 200 on the first substrate 100, the temperature of the second substrate 200 (the lower temperature-controlled stage 305) should be set to 35-50 ℃. The actual temperature setting depends primarily on the boiling point of the solvent in ink 202. The lower elevating unit 306 is used to adjust a distance between the first substrate 100 and the second substrate 200. The distance between the two will affect the concentration (vapor pressure) of the solvent vapor on the substrate surface, and when the concentration of the solvent vapor reaches saturation, further volatilization of the solvent between the first substrate 100 and the second substrate 200 will be suppressed. The distance between the first substrate 100 and the second substrate 200 is 3.5 to 30mm in the humidity cycle process, and then the distance increases to 50mm or more when the solvent in the re-inking part 104 needs to be removed. The distance between the first substrate 100 and the second substrate 200 may be adjusted by the lower elevating unit 306.
Specifically, as shown in fig. 5 and 10, the thin film formation apparatus further includes an upper support assembly;
the upper support assembly includes at least two substrate supporting elastic members 303 and a substrate supporting frame 304, which are oppositely disposed, an upper end of each substrate supporting elastic member 303 is fixedly connected to the working chamber 300, a lower end of each substrate supporting elastic member 303 is fixedly connected to the substrate supporting frame 304, and the first substrate 100 is placed on the substrate supporting frame 304.
In an embodiment of the present invention, as shown in fig. 5 and 10, the thin film formation apparatus further includes an upper lift assembly disposed above the substrate support frame 304, and the first substrate 100 is disposed between the substrate support frame 304 and the upper lift assembly.
Specifically, the upper lifting assembly includes: the upper temperature control platform 302 is fixedly connected with the lower end part of the upper lifting unit 301, and the upper end part of the upper lifting unit 301 is fixedly connected with the working cavity 300; the upper temperature controlled platen 302 is disposed above the substrate support frame 304; the first substrate 100 is disposed between an upper temperature controlled platen 302 and the substrate support frame 304.
The first substrate can be fixed between the substrate supporting elastic piece and the substrate supporting frame by downward movement of the upper lifting assembly; by moving the upper lift assembly upward, the first substrate can be placed on the substrate support frame 304, and the first substrate 100 can be taken out of the substrate support frame. The substrate support frame 304 and the substrate support springs 303 are used to ensure that the first substrate 100 is properly attached to the upper temperature controlled platen 302. The substrate support frame 304 supports the first substrate 100 from a non-display area around the first substrate 100. Meanwhile, a substrate supporting elastic member 303 (essentially, a spring-like structure) is used to tightly attach the first substrate 100 to the surface of the upper temperature-controlled stage 302. When it is desired to transfer the first substrate 100 out of the process chamber 300, the upper lift unit 301 is raised such that the first substrate 100 is separated from the surface of the temperature controlled stage 302 and remains on the substrate support frame 304, and the external robot removes the first substrate 100 from the substrate support frame 304.
Through upper portion accuse temperature platform 302, be convenient for heat first base plate 100, be favorable to reducing solvent on the surface of unusual film 103 on first base plate 100 and volatilize and dry, be favorable to solvent in the portion 104 of rehydrating china ink to volatilize and dry. The upper temperature-controlled stage 302 is used to regulate the temperature of the first substrate 100. In order to condense the solvent vapor volatilized from the second substrate 200 on the first substrate 100, the temperature of the first substrate 100 should be set at 5-15 ℃. The actual temperature setting depends primarily on the boiling point of the solvent in the ink. The upper lifting unit 301 is also for adjusting the distance between the first substrate 100 and the second substrate 200. The distance between the two will affect the concentration (vapor pressure) of the solvent vapor on the substrate surface, and when the concentration of the solvent vapor reaches saturation, further volatilization of the solvent between the first substrate 100 and the second substrate 200 will be suppressed. The distance between the first substrate 100 and the second substrate 200 is 3.5 to 30mm in the humidity cycle process, and then the distance increases to 50mm or more when the solvent in the re-inking part 104 needs to be removed. The distance between the first substrate 100 and the second substrate 200 may be adjusted by the lower elevating unit 306, the upper elevating unit 301, the substrate supporting frame 304, and the substrate supporting elastic member 303.
Specifically, the Humidity cycle processing is mainly performed on the Solution type (Solution) and Suspension type (Suspension) ink 202 having a particle size of 100nm or less, and when the first substrate 100 and the second substrate are dried under reduced pressure, the solvent vapor volatilized from the ink 202 performs the "Humidity cycle processing" (Humidity cycle) on the anomalous thin film 103 on the first substrate 100: that is, the solvent vapor condenses on the surface of the anomalous film 103 and partially dissolves the surface of the anomalous film 103, resulting in a re-inked portion 104 (a thin layer of ink 202 of equal thickness, as shown in fig. 5). At this time, since the liquid surface of the re-inking portion 104 is convex and concave (gas-liquid interface) at the edge position of the pixel pit and the center position of the pixel pit, respectively, according to the Young-Laplace equation (the additional pressure Δ p always points to the curvature center of the liquid surface, so that the pressure on the concave side is greater than that on the convex side), the additional pressure at the edge position of the pixel pit in the re-inking portion 104 is greater than that at the center position of the pixel pit, that is, the p edge in fig. 5 is greater than the p center, so that the edge-to-center flow is generated in the re-inking portion 104, thereby driving the organic material originally accumulated at the edge of the pixel pit to move to the center of the pixel pit, and under the action of gravity, the nanoparticles re-dispersed into the droplet (re-inking portion 104) will be gathered at the arc center position below the droplet, and finally along with the volatilization of the solvent and shrinkage of the, the material is deposited in the central area of the pixel pit, so that the abnormal film-forming appearance with thin middle and thick two sides caused by the coffee ring effect is improved.
Specifically, for the suspension type ink with particles above 100nm, it is possible to further reduce the distance between the first substrate 100 and the second substrate 200to 1-2mm and increase the temperature difference therebetween to 60-70 ℃, so that more solvent is condensed to the first substrate 100 and larger droplets are formed on the surface of the abnormal thin film 103, as shown in fig. 6. At this time, under the action of gravity, the nanoparticles re-dispersed in the droplet (re-ink-hydrated portion 104) will gather at the center of the arc below the droplet, and eventually, as the solvent evaporates and the droplet shrinks, this part of the material will be deposited in the center area of the pixel pit, thereby improving the film-forming morphology, as shown in fig. 5).
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are only for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium (e.g., ROM/RAM, magnetic disk, optical disk) as described above and includes instructions for enabling a terminal device (e.g., a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A film preparation method is characterized by comprising the following steps:
disposing a first substrate formed with an abnormal thin film over a second substrate deposited with ink, wherein the ink includes a solvent and a thin film material dissolved in the solvent;
controlling the solvent on the second substrate to volatilize, so that the abnormal thin film on the first substrate is dissolved in the volatilized solvent;
and controlling the solvent on the first substrate to volatilize to obtain the film.
2. The method according to claim 1, wherein the step of controlling the volatilization of the solvent on the second substrate to dissolve the abnormal thin film on the first substrate in the volatilized solvent comprises:
based on at least one of the following three implementations: increasing the temperature difference between the first substrate and the second substrate, reducing the distance between the first substrate and the second substrate to a first preset distance and reducing the preparation air pressure to a first preset air pressure, and controlling the volatilization of the solvent on the second substrate to enable the abnormal film on the first substrate to be dissolved in the volatilized solvent.
3. The method of claim 1, wherein the step of controlling the solvent evaporation on the first substrate to obtain the thin film comprises:
controlling the solvent on the first substrate to slowly volatilize so as to uniformly separate out the film material on the first substrate;
and controlling the solvent on the first substrate to be volatilized rapidly, and obtaining a thin film on the first substrate after the solvent is volatilized.
4. The method according to claim 3, wherein the step of controlling the solvent on the first substrate to slowly evaporate so as to uniformly deposit the thin film material on the first substrate comprises:
based on at least one of the following three implementations: increasing the preparation air pressure to a second preset air pressure, increasing the distance between the first substrate and the second substrate to a second preset distance, increasing the temperature of the first substrate, and controlling the solvent on the first substrate to slowly volatilize so as to uniformly separate out the film material on the first substrate.
5. The method according to claim 3, wherein the step of controlling the solvent on the first substrate to evaporate rapidly, and after the solvent evaporates, obtaining a thin film on the first substrate comprises:
controlling the solvent on the first substrate to be rapidly volatilized based on reduction of the preparation air pressure to a third preset air pressure, and obtaining a film on the first substrate after the solvent is volatilized.
6. The method for preparing a thin film according to claim 1, wherein the organic thin film material is one or more selected from a hole injection material, a hole transport material, a light emitting material, a hole blocking material, an electron transport material, and an electron injection material.
7. A thin film formation apparatus, comprising:
the working cavity is provided with an upper supporting component and a lower supporting component which are arranged in the working cavity, and an air exhaust device connected with the working cavity;
the upper supporting assembly is used for placing a first substrate, and the lower supporting assembly is used for placing a second substrate;
the air exhaust device is used for adjusting the air pressure in the working cavity.
8. The thin film forming apparatus as claimed in claim 7, wherein the lower support assembly comprises: a lower lifting unit and a lower temperature control platform; the second base plate set up in the upper end of lower part accuse temperature platform, lower part accuse temperature platform lower tip with the upper end fixed connection of lower part lift unit, lower part lift unit lower tip with working chamber fixed connection.
9. The thin film forming apparatus as claimed in claim 8, further comprising an upper support assembly;
the upper supporting assembly comprises at least two substrate supporting elastic pieces and a substrate supporting frame which are arranged oppositely, the upper end parts of the substrate supporting elastic pieces are fixedly connected with the working cavity, the lower end parts of the substrate supporting elastic pieces are fixedly connected with the substrate supporting frame, and the first substrate is placed on the substrate supporting frame.
10. The thin film formation apparatus of claim 9, further comprising: an upper lift assembly, the upper lift assembly comprising: the upper end part of the upper temperature control platform is fixedly connected with the lower end part of the upper lifting unit, and the upper end part of the upper lifting unit is fixedly connected with the working cavity; the upper temperature control platform is arranged above the substrate supporting frame;
the first substrate is arranged between the upper temperature control platform and the substrate supporting frame.
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CN106335298A (en) * 2015-07-09 2017-01-18 广东聚华印刷显示技术有限公司 Ink jet printing metal patterns, and preparation method thereof
CN108346679A (en) * 2017-08-18 2018-07-31 广东聚华印刷显示技术有限公司 The preparation method of typographical display device
CN108389979A (en) * 2018-03-07 2018-08-10 京东方科技集团股份有限公司 A kind of electroluminescence display panel, preparation method and display device

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Publication number Priority date Publication date Assignee Title
US20150325817A1 (en) * 2014-05-08 2015-11-12 Samsung Display Co., Ltd. Apparatus and method for manufacturing organic light emitting diode display
CN106335298A (en) * 2015-07-09 2017-01-18 广东聚华印刷显示技术有限公司 Ink jet printing metal patterns, and preparation method thereof
CN108346679A (en) * 2017-08-18 2018-07-31 广东聚华印刷显示技术有限公司 The preparation method of typographical display device
CN108389979A (en) * 2018-03-07 2018-08-10 京东方科技集团股份有限公司 A kind of electroluminescence display panel, preparation method and display device

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